CN110133800B - Waveguide type photonic crystal heterostructure capable of realizing wide-band unidirectional high transmission - Google Patents
Waveguide type photonic crystal heterostructure capable of realizing wide-band unidirectional high transmission Download PDFInfo
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- CN110133800B CN110133800B CN201910436968.1A CN201910436968A CN110133800B CN 110133800 B CN110133800 B CN 110133800B CN 201910436968 A CN201910436968 A CN 201910436968A CN 110133800 B CN110133800 B CN 110133800B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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Abstract
The invention belongs to the technical field of research of micro-nano photoelectric devices, and provides a waveguide type photonic crystal heterostructure capable of realizing wide-band one-way high transmission, which comprises a silicon dioxide substrate and a germanium substrate which are respectively arranged at two sides of a heterojunction interface, wherein the silicon dioxide substrate and the germanium substrate are arranged on the same plane; a plurality of germanium cylinders are periodically filled in the silicon dioxide substrate to form a first photonic crystal, and the axial direction of each germanium cylinder is vertical to the plane of the silicon dioxide substrate; a plurality of silicon dioxide cylinders are periodically filled in the germanium substrate to form a second photonic crystal, and the axial direction of each silicon dioxide cylinder is vertical to the plane of the germanium substrate; light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface form an included angle of 60 degrees. At the position of 1550nm of the central wavelength of optical communication, the forward transmittance in a TE polarization state is 0.90, and the transmission contrast is 0.98. In the range of 1450 nm-1650 nm, the forward transmittance in the TE polarization state reaches more than 0.78, and the transmission contrast reaches more than 0.86.
Description
Technical Field
The invention belongs to the technical field of research on micro-nano photoelectric devices, and particularly relates to a waveguide type photonic crystal heterostructure capable of realizing wide-band unidirectional high transmission.
Background
The development trend of optical communication is the miniaturization and integration of light quantum technology, and an integratable high-performance photonic diode is indispensable as a key component of the light quantum technology. Photonic crystals are novel materials that use photons as information carriers. The photonic crystal heterostructure designed based on the directional band gap mismatch can realize the unidirectional transmission of light waves, but has lower forward transmittance and narrower bandwidth, and can not meet the requirements of practical application.
In 2011, leersia et al (On-chip optical diode based On silicon photonic junctions Opt.express. 2011, Vol:19, 26948-.
In 2013, Von commander et al (uni-directional light amplification modulators of the triangular-shaped photonic crystal, opt. Mater.2013, Vol:35, 1455-.
In 2015, Lilin and the like (research on unidirectional light wave transmission based on total reflection two-dimensional photonic crystal heterojunction, university of Shanxi, 2015, Vol:38, 104-doped 110) break through directional band gap limitation by using the total reflection principle, realize unidirectional light wave transmission in TE mode, and have forward transmittance of 0.5 at 1560nm and lower forward transmittance.
In 2018, Liu Hui Yang and the like (waveguide heterostructure one-way transmission performance research based on total reflection, Acta optical. Sinica. 2018, Vol:38, 3) design a triangular lattice photonic crystal waveguide heterostructure, and realize the one-way transmission that the forward transmittance of TE mode light waves is higher than 0.8 and the transmission contrast is higher than 0.9 in the 1458 + 1517nm wavelength range and the bandwidth is narrower in the first heterostructure.
Disclosure of Invention
The invention aims to design a photonic crystal structure capable of realizing high transmissivity and high contrast in a wider frequency band so as to meet the actual requirement of the optical field.
The principle of the invention is to design a photonic crystal heterostructure capable of realizing unidirectional transmission of light waves by utilizing the principle of generalized total reflection, and improve the unidirectional transmission efficiency of the light waves by utilizing a waveguide structure.
In order to solve the technical problems, the invention adopts the technical scheme that: a waveguide type photonic crystal heterostructure capable of realizing broadband one-way high transmission comprises a substrate layer, and a silicon dioxide substrate and a germanium substrate which are arranged on the substrate layer, wherein the silicon dioxide substrate and the germanium substrate are respectively arranged on two sides of a heterojunction interface; a plurality of periodically arranged germanium cylinders are filled in the silicon dioxide substrate to form a first photonic crystal, and the axial direction of each germanium cylinder is vertical to the plane of the silicon dioxide substrate; a plurality of silicon dioxide cylinders which are arranged periodically are filled in the germanium substrate to form a second photonic crystal, and the axial direction of each silicon dioxide cylinder is vertical to the plane of the germanium substrate; light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface form an included angle of 60 degrees.
The centers of the first photonic crystal and the second photonic crystal are respectively provided with a first unfilled region and a second unfilled region along the incident direction of the light beam.
In the first photonic crystal, the filling rate of the germanium cylinders is r1/a1=0.32, r1 represents the radius of the germanium cylinders, and a1 represents the distance between the centers of two adjacent germanium cylinders.
Radius r1=0.256 μm of the germanium cylinder.
In the second photonic crystal, the filling ratio of the silica cylinders is r2/a2=0.4, r2 represents the radius of the silica cylinders, and a2 represents the distance between the centers of two adjacent silica cylinders.
The radius r2=0.334 μm of the silica cylinder.
The substrate layer is made of silicon dioxide materials, and the thickness of the substrate layer is larger than 1000 nm.
Compared with the prior art, the invention has the following beneficial effects: the principle of the invention is to design a photonic crystal heterostructure capable of realizing unidirectional transmission of light waves by utilizing the principle of generalized total reflection, add a defect structure in a waveguide, improve the unidirectional transmission efficiency of the light waves by utilizing the waveguide structure, and achieve the forward transmittance of more than 0.78 and the transmission contrast of more than 0.86 in a TE polarization state within the range of 1450nm to 1650 nm. At the optical communication center wavelength of 1550nm, the forward transmittance in the TE polarization state is 0.90, and the transmission contrast is 0.98.
Drawings
FIG. 1 is a schematic structural diagram of a waveguide-type photonic crystal heterostructure capable of achieving high unidirectional transmission of optical broadband according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view AA in FIG. 1;
FIG. 3 is a band diagram of photonic crystal PC1 in TE mode in an embodiment of the present invention;
FIG. 4 is a band diagram of photonic crystal PC2 in the TE mode in an embodiment of the present invention;
FIG. 5 is a graph of transmittance versus transmittance in the TE mode of the present invention;
FIG. 6 is a diagram showing the normal incidence field intensity distribution at 1550nm in the TE mode according to the present invention;
FIG. 7 is a diagram showing the distribution of the field intensity at 1550nm in the TE mode.
In the figure: 1 is a heterojunction interface, 2 is a silicon dioxide substrate, 3 is a germanium substrate, 4 is a germanium cylinder, 5 is a silicon dioxide cylinder, and 6 is a waveguide.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-2, an embodiment of the invention provides a waveguide type photonic crystal heterostructure capable of realizing broadband unidirectional high transmission, which includes a substrate layer, and a silica substrate 2 and a germanium substrate 3 disposed on the substrate layer, wherein the silica substrate 2 and the germanium substrate 3 are respectively disposed on two sides of a heterojunction interface 1, and have the same thickness; a plurality of germanium cylinders 4 are periodically filled in the silicon dioxide substrate 2 to form a first photonic crystal, and the axial direction of the germanium cylinders 4 is vertical to the plane of the silicon dioxide substrate 2; a plurality of silicon dioxide cylinders 5 are periodically filled in the germanium substrate 3 to form a second photonic crystal, and the axial direction of the silicon dioxide cylinders 5 is vertical to the plane of the germanium substrate 3; light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface 1 form an included angle of 60 degrees.
In addition, in the present embodiment, the first and second photonic crystals are centrally provided with a first unfilled region 7 and a second unfilled region 6 along the incident direction of the light beam, respectively. The first unfilled region 7 and the second unfilled region 6 form a waveguide structure.
Specifically, in this embodiment, in the first photonic crystal, the germanium cylinders 4 are uniformly arranged in an equilateral triangle arrangement manner, and in two upper and lower rows near the waveguide, one germanium cylinder 4 is removed for every other row; the filling rate is r1/a1=0.32, r1 represents the radius of the germanium cylinder 4, and a1 represents the distance between the centers of two adjacent germanium cylinders 4. In the second photonic crystal, the silica cylinders are also uniformly arranged in an equilateral triangle arrangement mode, and only one silica cylinder 5 is removed for every other row in the descending row close to the waveguide position; the filling ratio of the silica cylinders 5 is r2/a2=0.4, r2 represents the radius of the silica cylinders 5, and a2 represents the distance between the centers of two adjacent silica cylinders 5.
Specifically, in this embodiment, the substrate layer is a silicon dioxide substrate, and the thickness thereof is greater than 1000 nm.
Specifically, in this embodiment, the radius r1=0.256 μm of the germanium cylinder 4, and the radius r2=0.334 μm of the silicon dioxide cylinder 5.
The photonic crystal provided by the embodiment of the invention can be processed based on a stripping technology, and the processing process comprises the following steps: firstly, SiO is selected2Using wafer as substrate, coating low-refractive index polymer on the wafer, and growing SiO material on the substrate by chemical vapor deposition2A material; then coating photoresist on the surface of the material by using a rotary coating method, and manufacturing SiO on the photoresist by using a photoetching method2The corresponding pattern of the material. Then, the photoresist is used as a mask, and an Inductively Coupled Plasma (ICP) etching method is used for etching on the SiO2And etching the corresponding position of the germanium material to form a blank on the material. Germanium material is then grown in the blank using a CVD process. Excess germanium material (in SiO) after photoresist stripping2Top of material) is removed. Wherein the heterojunction interface can be directly controlled by a pattern. The photonic crystal heterostructure capable of realizing unidirectional transmission is prepared by the method. The thickness of the heterostructure is made of SiO2The thickness of the material is determined, taking into account the diffraction limit requirements, SiO2The thickness of the material must be greater than the diffraction limit of 1550nm wavelength
. During the etching process, SiO is required to be added2And completely etching through. The deposition requires the height of the cylinder and SiO2The material thickness is the same. Therefore, the heterogeneous material is completely in the hole.
As shown in fig. 3 and 4: the normalized frequency of the forbidden band is 0.525-0.556 (a/lambda) when the photonic crystal PC1 and the photonic crystal PC2 are in the TE mode. Where a is the lattice constant and λ is the wavelength. Therefore, the photonic crystal provides conditions for realizing wide-band high-transmittance and high-contrast unidirectional transmission in a forbidden band region.
Using the transmission contrast formula: c = (Tf-Tb)/(Tf + Tb) gives transmission contrast C, where Tf represents forward transmission, Tb represents reverse transmission, and C represents transmission contrast. As shown in FIG. 5, the forward transmittance and the transmission contrast of the TE polarization state of over 0.78 and over 0.86 in the range of 1450nm to 1650nm are simulated by calculation of a two-dimensional Finite Difference Time Domain (FDTD).
FIG. 6 shows a forward incident field strength distribution plot in the TE mode at 1550nm for the embodiment of the present invention, and FIG. 7 shows a reverse incident field strength distribution plot in the TE mode at 1550nm for the embodiment of the present invention. It can be seen from the figure that the forward incident light source can pass through, and the backward incident light source is intercepted, so that the unidirectional transmission of the light wave of the photonic crystal heterostructure is realized.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A waveguide type photonic crystal heterostructure capable of realizing broadband one-way high transmission is characterized by comprising a substrate layer (8), a silicon dioxide substrate (2) and a germanium substrate (3) which are arranged on the substrate layer (8), wherein the silicon dioxide substrate (2) and the germanium substrate (3) are respectively arranged on two sides of a heterojunction interface (1); a plurality of periodically arranged germanium cylinders (4) are filled in the silicon dioxide substrate (2) to form a first photonic crystal, and the axial direction of the germanium cylinders (4) is vertical to the plane of the silicon dioxide substrate (2); a plurality of silicon dioxide cylinders (5) which are arranged periodically are filled in the germanium substrate (3) to form a second photonic crystal, and the axial direction of the silicon dioxide cylinders (5) is vertical to the plane of the germanium substrate (3); light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface (1) form an included angle of 60 degrees;
the center of the first photonic crystal and the center of the second photonic crystal are respectively provided with a first unfilled region (7) and a second unfilled region (6) along the incident direction of a light beam, and the first unfilled region (7) and the second unfilled region (6) form a waveguide structure;
in the first photonic crystal, the germanium cylinders (4) are uniformly arranged in an equilateral triangle arrangement mode and are close to the waveguide positions in two rows from top to bottom, one germanium cylinder (4) is removed for a separation column, in the second photonic crystal, the silicon dioxide cylinders (5) are uniformly arranged in an equilateral triangle arrangement mode and are only close to the waveguide positions in the bottom row, and one silicon dioxide cylinder (5) is removed for a separation column.
2. The waveguide type photonic crystal heterostructure capable of realizing broadband unidirectional high transmission according to claim 1, wherein in the first photonic crystal, the filling ratio of the germanium cylinders (4) is r1/a1=0.32, r1 represents the radius of the germanium cylinders (4), and a1 represents the distance between the centers of two adjacent germanium cylinders (4).
3. A waveguide photonic crystal heterostructure capable of realizing broadband unidirectional high transmission according to claim 2, wherein the radius r1=0.256 μm of the germanium cylinder (4).
4. The waveguide type photonic crystal heterostructure capable of realizing broadband unidirectional high transmission according to claim 1, wherein in the second photonic crystal, the filling rate of the silica cylinders (5) is r2/a2=0.4, r2 represents the radius of the silica cylinders (5), and a2 represents the distance between the centers of two adjacent silica cylinders (5).
5. A waveguide type photonic crystal heterostructure capable of realizing broadband unidirectional high transmission according to claim 4, wherein the radius r2=0.334 μm of the silica cylinder (5).
6. A waveguide type photonic crystal heterostructure capable of realizing broadband unidirectional high transmission according to claim 1, wherein the substrate layer (8) is made of silicon dioxide material and has a thickness greater than 1000 nm.
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