CN110109199B - Photonic crystal heterostructure for realizing one-way transmission of any linearly polarized light - Google Patents
Photonic crystal heterostructure for realizing one-way transmission of any linearly polarized light Download PDFInfo
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- CN110109199B CN110109199B CN201910436966.2A CN201910436966A CN110109199B CN 110109199 B CN110109199 B CN 110109199B CN 201910436966 A CN201910436966 A CN 201910436966A CN 110109199 B CN110109199 B CN 110109199B
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Abstract
The invention relates to the field of photon communication and quantum computation, and discloses a photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light, which comprises a silicon dioxide substrate and a silicon substrate which are respectively arranged at two sides of a heterojunction interface, wherein the silicon dioxide substrate and the silicon substrate are on the same plane; a plurality of silicon cylinders are periodically filled in the silicon dioxide substrate to form a first photonic crystal, and the axial direction of each silicon cylinder is vertical to the plane of the silicon dioxide substrate; a plurality of silicon dioxide cylinders are periodically filled in the silicon substrate to form a second photonic crystal, and the axial direction of each silicon dioxide cylinder is vertical to the plane of the silicon substrate; and light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface form an included angle of 45 degrees. The invention can be used for realizing the one-way transmission of any linearly polarized light, the transmissivity reaches more than 0.6, and the transmission contrast is more than 0.9.
Description
Technical Field
The invention relates to the field of photon communication and quantum computation, in particular to a photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light.
Background
The photonic crystal one-way transmission device based on the micro-nano structure has potential application in the fields of quantum optics and optical communication. At present, the problem of low forward transmittance and polarization selectivity still exists in the optical wave one-way transmission device designed based on the space inversion asymmetry, and the requirements of practical application cannot be met.
In 2011, a lee-shijie group (On-chip optical fiber based On silicon photonic junctions,2011,19, 26948) proposes an air circular hole type photonic crystal heterostructure, based On the energy band characteristics of photonic crystals, the one-way transmission of single linearly polarized light near 1550nm of a near infrared band is realized, the average forward transmittance is 21.3%, and the bandwidth is 50 nm.
In 2013, Von Shuaishui (Unidirectional light beam splitting converters of the two-dimensional high-purity photonic crystal structures, 2013, 36 and 546) designs a two-dimensional asymmetric photonic crystal structure, which is formed by periodically arranging elliptical silicon columns and circular silicon columns in air, and TE linearly polarized light one-way transmission is realized by utilizing the energy band mismatch characteristic.
The Liudan group (Polarization-independent one-way transmission of silicon annular photonic crystals, 2018, 8, 095011) in 2018 constructs a ring-shaped silicon photonic crystal heterostructure, and under two linear Polarization modes of TE and TM, the forward transmission rate of 0.45 is achieved at the frequency of 0.43 a/lambda, so that the linear Polarization independent unidirectional transmission is realized.
However, in the prior art, the micro-nano structure photonic crystal light wave one-way transmission device still has the problem of low forward transmittance when working in a single polarization state or working in two polarization states.
Disclosure of Invention
The invention overcomes the defects of the prior art, and solves the technical problems that: the photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light is provided.
In order to solve the technical problems, the invention adopts the technical scheme that: a photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light comprises a substrate layer, and a silicon dioxide substrate and a silicon substrate which are arranged on the substrate layer, wherein the silicon dioxide substrate and the silicon substrate are respectively arranged on two sides of a heterojunction interface; a plurality of silicon cylinders are periodically filled in the silicon dioxide substrate to form a first photonic crystal, and the axial direction of each silicon cylinder is vertical to the plane of the silicon dioxide substrate; a plurality of silicon dioxide cylinders are periodically filled in the silicon substrate to form a second photonic crystal, and the axial direction of each silicon dioxide cylinder is vertical to the plane of the silicon substrate; and light rays are incident from one side of the first photonic crystal, and the incident direction and the heterojunction interface form an included angle of 45 degrees.
The refractive indexes of the silicon dioxide substrate and the silicon dioxide cylinder are 1.495, and the refractive indexes of the silicon substrate and the silicon cylinder are 3.48.
The lattice constant of the first photonic crystal is a1=424 nm, radius of the silicon cylinder r1=60 nm。
Lattice constant a of the second photonic crystal2=600 nm, radius r of the silica cylinder2 =140 nm。
The thickness of the silicon dioxide substrate and the thickness of the silicon substrate are both 1500 nm.
Compared with the prior art, the invention has the following beneficial effects: the heterostructure designed by the invention can be used for realizing the one-way transmission of any linearly polarized light, the transmissivity reaches more than 0.6, and the transmission contrast is more than 0.9. At the central operating wavelength of 1550nm, a forward transmission of 0.6 and a transmission contrast above 0.9 are achieved.
Drawings
Fig. 1 is a schematic structural diagram of a photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light according to an embodiment of the present invention.
FIG. 2 is a band diagram of photonic crystal PhC1 and photonic crystal PhC2 in an embodiment of the present invention.
FIG. 3 is an equal frequency plot of PhC1 and PhC2 in an embodiment of the present invention.
FIG. 4 is a graph of electric field intensity upon incidence of TM, TE and 45 ° linearly polarized light at a wavelength of 1550 nm.
Fig. 5 is a graph of forward and reverse transmittance and transmission contrast upon incidence of TM, TE and 45 ° linearly polarized light.
In the figure: 1 is a heterojunction interface, 2 is a silicon dioxide substrate, 3 is a silicon substrate, 4 is a silicon cylinder, and 5 is a silicon dioxide cylinder.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a photonic crystal heterostructure for realizing unidirectional transmission of any linearly polarized light, including a substrate layer, and a silica substrate 2 and a silica substrate 3 disposed on the substrate layer, where the silica substrate 2 and the silica substrate 3 are respectively disposed on two sides of a heterojunction interface 1; a plurality of silicon cylinders 4 are periodically filled in the silicon dioxide substrate 2 to form a first photonic crystal PhC1, and the axial direction of the silicon cylinders 4 is vertical to the plane of the silicon dioxide substrate 2; a plurality of silicon dioxide cylinders 5 are periodically filled in the silicon substrate 3 to form a second photonic crystal PhC2, and the axial direction of each silicon dioxide cylinder 5 is vertical to the plane of the silicon substrate 3; light rays are incident from one side of the first photonic crystal in a direction parallel to the plane of the substrate, and the incident direction and the heterojunction interface 1 form an included angle of 45 degrees.
Specifically, in the embodiment of the present invention, the refractive indexes of the silicon dioxide substrate 2 and the silicon dioxide cylinder 5 are 1.495, and the refractive indexes of the silicon substrate 3 and the silicon cylinder 4 are 3.48. The substrate layer is a silicon dioxide substrate, and the thickness of the silicon dioxide substrate is more than 1000 nm.
Specifically, in this embodiment, in the first photonic crystal, the silicon cylinders are arranged in a square shape, and the lattice constant of the first photonic crystal is a1=424 nm, radius of the silicon cylinder 4 r1=60 nm. In the second photonic crystal, silicon dioxide cylinders are arranged in a square shape, and the lattice constant a of the second photonic crystal2=600 nm, radius r of the silica cylinder2=140 nm. Where the lattice constant represents the distance between the centers of the two closest silicon cylinders 4 or silicon dioxide cylinders 5.
Specifically, in this embodiment, the thicknesses of the silicon dioxide substrate 2 and the silicon substrate 3 are both 1500 nm.
The embodiment of the invention comprises the following steps: the processing based on the peeling technology is divided into the following steps. Firstly, SiO is selected2Using wafer as substrate, coating low-refractive index polymer on the wafer, and growing SiO material on the substrate by chemical vapor deposition2A silicon dioxide layer is formed. Then using a rotary gluing method to glue the silicon dioxide layerIs coated with a photoresist and a photolithographic method is used to fabricate SiO on the photoresist2The corresponding pattern of the material. Then using the photoresist as a mask, and using Inductively Coupled Plasma (ICP) to form a film on the SiO2Etching is carried out on the silicon dioxide layer, a cavity is etched at the position corresponding to the Si material, and then the Si material is grown on the cavity by using a CVD method. Excess after washing away the photoresist (in SiO)2Material top) Si material is removed. Wherein the heterojunction interface can be directly controlled by a pattern. Thereby preparing the photonic crystal heterostructure capable of realizing unidirectional transmission. The thickness of the heterostructure is made of SiO2The thickness of the material is determined, taking into account the diffraction limit requirements, SiO2The thickness of the material must be greater than the diffraction limit of 1550nm wavelength
. During the etching process, SiO is required to be added2And completely etching through. The deposition requires the height of the cylinder and SiO2The material thickness is the same. Therefore, the heterogeneous material is completely in the hole.
As shown in FIG. 2, the energy band diagrams of the photonic crystal PhC1 and the photonic crystal PhC2 in the embodiment of the present invention are shown. Fig. 2a and 2b show the energy bands of photonic crystal PhC1 and photonic crystal PhC2, respectively, under TM light incidence, and fig. 2c and 2d show the energy bands of photonic crystal PhC1 and photonic crystal PhC2, respectively, under TE light incidence. As can be seen from the structure diagram of the energy bands, when the wavelength of TM and TE linearly polarized light is 1550nm, the first energy band corresponding to PhC1 is a conduction band, and corresponding to the fifth energy band of PhC2, the TM linearly polarized light has a band gap, and the TE linearly polarized light is a conduction band, as shown in FIG. 2.
As shown in fig. 3, which is an equal frequency diagram of photonic crystal PhC1 and photonic crystal PhC2 in the embodiment of the present invention, fig. 3a and 3b respectively show equal frequency diagrams of a first energy band and a fifth energy band of PhC1, and fig. 3c and 3d respectively show equal frequency diagrams of a first energy band and a fifth energy band of PhC 2. As can be seen from the equal frequency diagram, the light waves propagate in PhC1 along the gradient direction of the equal frequency line, the self-collimation effect exists in PhC2, and the forward incident light can be transmitted along the horizontal direction.
As shown in fig. 4, which is a graph of electric field intensity when TM, TE and 45 ° linearly polarized light having a wavelength of 1550nm are incident, fig. 4a to 4c show electric field intensity distribution graphs of TM, TE and 45 ° linearly polarized light in the heterostructure, respectively. As can be seen from the figure, TM, TE and 45-degree linearly polarized light can realize unidirectional transmission in the photonic crystal heterostructure.
Considering practical preparation, analog simulation needs to be carried out on the two-dimensional photonic crystal flat plate heterostructure with limited thickness, and the calculation result is shown in fig. 5. FIGS. 5 a-5 c are graphs of forward and reverse transmittance and transmission contrast at different wavelengths for TM, TE and 45 degree linearly polarized light incidence, respectively, where T isFRepresents a forward transmittance, TBRepresents the reverse transmittance, and C represents the transmission contrast, which is calculated by the formula: c = (T)F—TB）/（TF+TB). As can be seen from fig. 5: the forward transmittance of any linearly polarized light at 1550nm reaches 0.6, and the transmission contrast is higher than 0.9. Light of any linear polarization (including TM, TE and 45 DEG linear polarization) is incident on the heterostructure, and the heterostructure has higher positive transmission (in the common wave band of 1515 nm to 1613 nm)>0.5) and transmission contrast ratio: (>0.93), one-way transmission of arbitrary linearly polarized light is realized.
The heterostructure designed by the invention can be used for realizing the one-way transmission of any linearly polarized light, the transmissivity reaches more than 0.6, and the transmission contrast is more than 0.9. At the central operating wavelength of 1550nm, a forward transmission of 0.6 and a transmission contrast above 0.9 are achieved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (4)
1. Photonic crystal heterostructure for realizing one-way transmission of any linearly polarized light, and photonic crystal heterostructureIs characterized by comprising a substrate layer, a silicon dioxide substrate (2) and a silicon substrate (3) which are arranged on the substrate layer, wherein the silicon dioxide substrate (2) and the silicon substrate (3) are respectively arranged at two sides of a heterojunction interface (1); a plurality of silicon cylinders (4) which are arranged in a square shape and the arrangement direction of which is parallel to the heterojunction interface (1) are periodically filled in the silicon dioxide substrate (2) to form a first photonic crystal, and the axial direction of each silicon cylinder (4) is vertical to the plane of the silicon dioxide substrate (2); a plurality of silicon dioxide cylinders (5) which are arranged in a square shape are periodically filled in the silicon substrate (3) to form a second photonic crystal, and the axial direction of each silicon dioxide cylinder (5) is vertical to the plane of the silicon substrate (3); light rays are incident from one side of the first photonic crystal, the incident direction and the heterojunction interface (1) form an included angle of 45 degrees, and the lattice constant of the first photonic crystal is a1=424 nm, radius of the silicon cylinder (4) r1=60 nm, lattice constant a of the second photonic crystal2=600 nm, radius r of the silica cylinder (5)2 =140 nm。
2. A photonic crystal heterostructure for realizing unidirectional transmission of arbitrarily linearly polarized light, which is characterized in that the refractive indexes of the silicon substrate (2) and the silicon cylinder (5) are 1.495, and the refractive indexes of the silicon substrate (3) and the silicon cylinder (4) are 3.48.
3. The photonic crystal heterostructure for realizing unidirectional transmission of arbitrarily linearly polarized light, which is characterized in that the thickness of the silicon dioxide substrate (2) and the silicon substrate (3) is 1500 nm.
4. The photonic crystal heterostructure for realizing unidirectional transmission of randomly linearly polarized light, as claimed in claim 1, wherein the substrate layer is made of silicon dioxide material, and the thickness of the silicon dioxide material is greater than 1000 nm.
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