CN112255885A - Photoresist coating method and coating device - Google Patents
Photoresist coating method and coating device Download PDFInfo
- Publication number
- CN112255885A CN112255885A CN202011215536.7A CN202011215536A CN112255885A CN 112255885 A CN112255885 A CN 112255885A CN 202011215536 A CN202011215536 A CN 202011215536A CN 112255885 A CN112255885 A CN 112255885A
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- photoresist
- wafer
- spraying
- photoresist coating
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 154
- 238000000576 coating method Methods 0.000 title claims abstract description 62
- 239000011248 coating agent Substances 0.000 title claims abstract description 41
- 238000005507 spraying Methods 0.000 claims abstract description 53
- 239000007921 spray Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
The invention provides a photoresist coating method, which comprises the following steps: and spraying photoresist at least two points above the wafer. The invention also provides a photoresist coating device, comprising: the spraying plate is provided with at least two nozzles. Therefore, the invention can achieve the technical effects that the coating uniformity of the photoresist on the wafer can be improved, the photoresist coating device is suitable for the wafer with larger size, the whole wafer can be covered, the defect that the edge of the wafer cannot be distributed on the photoresist distribution is reduced, the rotation or the rotation speed is not required to be improved, and the wafer cannot be thrown out or cracked due to the stress generated by the centrifugal action.
Description
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to a photoresist coating method and a photoresist coating device.
Background
In the field of integrated circuit fabrication, one important process step is the application of photoresist to a wafer. Referring to fig. 1, in the prior art, a photoresist coating method includes: step one, S01 moves the photoresist nozzle 01 (nozzle) to the center of the wafer 02; secondly, S02 spits the photoresist 03 to the center of the wafer 02; in the third step, S03 is then rotated to cure the photoresist 03 onto the wafer 02 uniformly with a certain film thickness.
The increase in wafer size means that the same process steps can produce more chips, thereby reducing the cost of the transistor. However, the increase in the wafer size requires higher demands on the equipment, such as uniformity (uniformity). As integrated circuit fabrication technology advances, photoresist coating also encounters a number of challenges: the requirement for the uniformity of photoresist coating is continuously increased along with the progress of the manufacturing process; as the size of the wafer increases, a faster rotation speed is required to push the photoresist to the edge of the wafer, but when the rotation speed is too high, the wafer is easily thrown away or the stress becomes large and the wafer is broken. Therefore, when the wafer size becomes larger, the photoresist coating on the wafer edge may have poor uniformity or even incomplete coverage (void coating).
The problem that exists among the prior art is because the wafer size grow, adopt the rotation of prior art to distribute photoresist on the wafer (get rid of) evenly under the centrifugal force effect, can cause required rotational speed to improve, the wafer bears the circumstances such as bigger stress, is difficult to guarantee the homogeneity of photoresist moreover.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the photoresist is unevenly distributed in the coating process, and the wafer stress caused by rotation is overlarge, so that the edge coating of the wafer is poor.
In order to solve the above technical problems, the present invention provides a photoresist coating method, which aims to improve the film thickness uniformity of a photoresist on a wafer surface, improve the coverage of the photoresist, and avoid additional stress caused by rotation. The invention also provides a photoresist coating device, which aims to realize the photoresist coating method provided by the invention, and the photoresist can be uniformly and completely distributed without additional stress.
In order to achieve the above object, the present invention provides a photoresist coating method comprising: and spraying photoresist at least two points above the wafer.
Preferably, in the photoresist coating method, the points for ejecting the photoresist are arranged at different radiuses of the center of the wafer.
Preferably, the photoresist coating method controls the position of the photoresist spraying point and the photoresist spraying speed and spraying time of the nozzle according to the size of the wafer, and the size of the wafer is 5 inches, 6 inches, 8 inches, 12 inches or more than 12 inches.
Preferably, the photoresist coating method measures the uniformity of the photoresist on the surface of the wafer, and adjusts the photoresist spraying speed and the photoresist spraying time of the spraying point according to the measured data.
In order to achieve the above object, the present invention also provides a photoresist coating apparatus, comprising: the spraying plate is provided with at least two nozzles.
Preferably, the spray plate is circular, the center of the spray plate is used as the center, the nozzles are uniformly arranged on the first radius in the circumferential direction, and the nozzles are uniformly arranged on the second radius in the circumferential direction.
Preferably, each nozzle is connected with a spraying amount control unit respectively, and the spraying amount control unit comprises a motor for independently controlling the flow or a valve for independently controlling the opening.
Preferably, the photoresist coating apparatus further comprises:
a photoresist film thickness measuring unit for obtaining measurement data;
the spraying amount control unit comprises a controller;
the photoetching film thickness measuring unit is electrically connected with the controller and comprises an elevation measurer or an image pickup processor;
the controller sends a control signal to the motor or the valve.
Preferably, the photoresist coating apparatus further comprises: and the program memory is used for recording wafer size data, control signal data and measurement data.
Preferably, the photoresist coating apparatus is adapted to a chemical used in a photolithography process, the chemical including a G-line photoresist, an I-line photoresist, an Krf photoresist, an Arf photoresist, an anti-reflective material, or a filling material.
Compared with the prior art, the invention provides a photoresist coating method, which comprises the following steps: and spraying photoresist at least two points above the wafer. The invention also provides a photoresist coating device, comprising: the spraying plate is provided with at least two nozzles. Therefore, the invention can achieve the technical effects that the coating uniformity of the photoresist on the wafer can be improved, the photoresist coating device is suitable for the wafer with larger size, the whole wafer can be covered, the defect that the edge of the wafer cannot be distributed on the photoresist distribution is reduced, the rotation or the rotation speed is not required to be improved, and the wafer cannot be thrown out or cracked due to the stress generated by the centrifugal action.
Drawings
Fig. 1 shows a schematic diagram of a photoresist coating method and a coating apparatus in the related art.
FIG. 2 is a schematic structural diagram of a spray disk in a photoresist coating apparatus provided by the present invention.
FIG. 3 is a schematic diagram showing the distribution of nozzles on a spray plate in a photoresist coating apparatus provided by the present invention.
FIG. 4 is a cross-sectional view of an embodiment of a nozzle plate of a photoresist coating apparatus according to the present invention.
Reference numerals indicate the same.
The prior art is as follows:
01 photoresist nozzle
02 wafer
03 photoresist spraying;
the invention comprises the following steps:
1 spray plate
2 spray nozzle
3 first circumference
4 second circumference
5 storage pool
6 valve
7, glue inlet position.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
The photoresist coating method provided by the invention comprises the following steps: and spraying photoresist at least two points above the wafer. By arranging a set number of dots for ejecting the photoresist above the wafer according to the amount of the photoresist ejected from each head and the area that can be covered, the entire area of the wafer can be covered. Moreover, the points are arranged in a controllable manner, so that the uniformity of the film thickness of the photoresist can be improved.
Furthermore, according to the photoresist coating method provided by the invention, the points for spraying the photoresist are arranged at different radiuses of the center of the wafer. Therefore, the requirement of uniform photoresist spraying of the wafer radiuses with different sizes can be met.
Further, according to the photoresist coating method provided by the invention, the position of the photoresist spraying point, the photoresist spraying speed of the nozzle and the spraying time are controlled according to the size of the wafer, and the size of the wafer is 5 inches, 6 inches, 8 inches, 12 inches or more than 12 inches. Accordingly, in the case of the maximum size of the wafer to be applied, the outermost circle of dots ejecting the photoresist is arranged, and the inward dots ejecting the photoresist at each radius, which are provided in order to maintain uniform spraying, need to be opened to cover all the regions of the dots inside. In other words, the method of the present invention arranges the photoresist-sprayed dots adapted to the edge of the 5-inch wafer at a certain radius circumference, and arranges several radii of photoresist-sprayed dots at the inner part of the radius circumference to ensure coverage, and when the 5-inch wafer needs to be coated with photoresist, the photoresist is sprayed at the radius circumference and the inner part of the radius circumference. On the basis of 5 inches, the photoresist spraying points suitable for the edge of the 6-inch wafer are arranged on the other radius circle of the 6-inch wafer, and the circular ring between the circle with the radius corresponding to 5 inches and the circle with the radius corresponding to 6 inches determines whether the spraying points need to be arranged or not according to the principle of covering all areas, and the spraying points with several radii are arranged. By analogy, the corresponding ejection points are arranged according to the conditions of the photoresist ejected by the ejection points, the maximum applicable size and the like. Typically, a wafer size of 5 inches also refers to a wafer diameter of 125 mm; 6 inches also means a wafer diameter of 150 mm; 8 inches also refers to a wafer diameter of 200 mm; 12 inches also refers to a wafer diameter of 300 mm; 18 inches also refers to a wafer diameter of 450 mm.
Further, the photoresist coating method provided by the invention measures the uniformity of the photoresist on the surface of the wafer, and adjusts the photoresist spraying speed and the photoresist spraying time of the spraying points according to the measured data. Therefore, when the photoresist on a certain position of the surface of the wafer is measured to be less, the corresponding ejection point can be controlled to eject the photoresist again; until the photoresist on all parts of the surface is uniform and reaches the required film thickness.
Referring to fig. 2 to 4, one embodiment of a photoresist coating apparatus according to the present invention includes: the spraying plate 1 is provided with at least two nozzles 2. In figure 2 there are shown 17 jets. Fig. 3 shows that there are 19 jets. Fig. 4 shows a cross-sectional view, cut to 5 jets. Fig. 4 shows a schematic view of one of the sectional structures of the distribution of fig. 3.
Referring to fig. 2 to 4, since the wafer has a central symmetrical shape, the nozzles may be arranged with central symmetry in order to further improve the uniformity of the photoresist distribution on the wafer. The spray disk 1 is circular, but not limited to this, and it is only for the determination of the distribution center point of the spray nozzle. When the photoresist spraying work is carried out, the distribution center point of the nozzle is aligned with the center position of the wafer. Taking the center C of the spray disk 1 as a center (actually, also, a distribution center point of the nozzles), the nozzles are uniformly arranged in the circumferential direction at the first radius, that is, the centers C1i of the nozzles (total 6 nozzles) are located on the first circumference 3 and uniformly distributed in the circumferential direction; the nozzles are arranged uniformly circumferentially at the second radius, i.e. the centre C2j of each nozzle (12 in total) is located on the second circumference 4 and is distributed uniformly circumferentially. The spout is centrosymmetric, and the embodiment shown in the figure is a circular spout. In the embodiment shown in fig. 3, the angle between the line connecting the center C of one of the nozzles C1i and the center C at the first radius and the line connecting the center C of one of the nozzles C2j and the center C is 0, which is also defined as the distribution stagger angle of 0 degrees, i.e., the example point in the figure. The relative ratio, the distribution quantity, the distribution staggered angle, the nozzle size and the nozzle shape of the first radius and the second radius are designed according to the covering performance of photoresist spraying. For example, in the embodiment shown in the figure, 6 nozzles are arranged at the first radius, and 12 nozzles are arranged at the second radius, then the center C11 of the first nozzle can be arranged on the angular bisector of the connecting angle between the center C21 and the center C22 of two adjacent nozzles at the second radius and then are respectively and uniformly distributed on the circumference. The second radius of the illustrated embodiment is twice the first radius. In fig. 3, a further nozzle is arranged in the centre C, which can be seen as another radius, which is the case for a radius of 0.
Each nozzle 2 is respectively connected with a spraying amount control unit, and the spraying amount control unit comprises a motor for independently controlling flow or a valve for independently controlling opening. Fig. 4 shows one embodiment of the spraying amount control unit, after the photoresist enters the spraying tray 1, a storage tank 5 for storing the photoresist is arranged inside the spraying tray 1, a valve 6 capable of controlling the opening and the switch is arranged between the storage tank 5 and the nozzle 2, when the valve 6 is closed, the photoresist cannot be sprayed out from the nozzle 2, the process design that which nozzle 2 is needed by the outermost edge of the photoresist to spray can be controlled, the opening of the valve 6 is controlled, the flow of the photoresist passing through the valve 6 can be controlled, and the duration of the photoresist spraying is controlled by the switch. The switch is technically understood to have an opening degree and an opening degree of 0. The storage pool 5 has the function of storing the photoresist to a certain extent, so that the influence of the supply amount of the photoresist at the center and the edge of the photoresist inlet 7 on the glue outlet amount of the nozzle is avoided, and the glue outlet amount of the nozzle is related to the opening of a valve, similar to the action of a buffer. The motor is a device for pumping out the photoresist, can control the flow from 0 to a set flow, and realizes the control of the spraying amount and duration of the photoresist. Each nozzle is independently corresponding to a spraying amount control unit, the flow rate and the duration of the photoresist of each nozzle, namely the total spraying amount can be independently controlled, and the uniformity and the coverage of the photoresist spraying can be controlled by combining the distribution design.
In order to further control the uniformity and the coverage of the photoresist, the photoresist coating device provided by the invention further comprises: a photoresist film thickness measuring unit for obtaining measurement data; the spraying amount control unit comprises a controller; the photoetching film thickness measuring unit is electrically connected with the controller and comprises an elevation measurer or an image pickup processor; the controller sends a control signal to the motor or the valve. Generally, the height measuring device is arranged on a surface parallel to a plane of a desired photoresist film, generally, the plane where the nozzles are located is a surface with the set characteristics, the height measuring device can measure a plurality of points, the number of the measuring points can be the same as that of the nozzles, the measuring points are uniformly arranged near one of the nozzles, the point which is measured by the measuring point to the minimum series of points in each height is the thickest point of the film, the rest of the nozzles need to continuously spray the photoresist, and the height value can be set according to the film thickness, and the photoresist is continuously sprayed at the nozzle which is larger than the set height value. And the image shooting processor shoots the surface form of the photoresist film, so that the concave part is processed by the image, and the corresponding nozzle continuously sprays the photoresist.
In order to further control the uniformity and the coverage of the photoresist, the photoresist coating device provided by the invention further comprises: and the program memory is used for recording wafer size data, control signal data and measurement data. The data of the wafer size is the data set in the manufacturing process, namely the size of the corresponding wafer is determined by the process manufacturing process before the photoresist spraying work is carried out. The control signal data includes, in the trial-manufacturing process, the control signal corresponding to the amount ejected from each nozzle (including which nozzles are closed) determined by technical means such as simulation, experiment and the like, and is further characterized by a control electric signal provided for each pump or a control electric signal provided for each valve (the valve needs to be used in cooperation with the stepping motor). And the control signal data also comprises a method for realizing measurement and control. These control signal data constitute the basic data for the photoresist coating of a wafer, a fabrication process. Measurement data, including data relating to the thickness of the photoresist film measured during the manufacturing process, typically reflects the uniformity and coverage of the photoresist coating. Further, the height value from the surface of the photoresist film layer to a set measurement reference plane (i.e. a surface expected to be parallel to the photoresist film plane) or the image data of the surface morphology of the photoresist film layer can be refined. Furthermore, the measurement and control data can predict the correction of the basic data of the photoresist coating when the wafer of a certain batch is produced through a machine learning program. Batch production has the meaning of the same wafer and the same process.
The photoresist coating device provided by the invention is suitable for chemicals used in a photoetching process, and the chemicals comprise G-line photoresist, I-line photoresist, Krf photoresist, Arf photoresist, anti-reflection materials or filling materials.
Similarly, the photoresist coating method provided by the invention is also applicable to the chemicals used in the photolithography process, including G-line photoresist, I-line photoresist, Krf photoresist, Arf photoresist, anti-reflection material, or filling material.
The above is the specific photoresist coating method and the specific structural composition and connection relationship of the photoresist coating device provided by the present invention. Therefore, the invention can achieve the technical effects that the coating uniformity of the photoresist on the wafer can be improved, the photoresist coating device is suitable for the wafer with larger size, the whole wafer can be covered, the defect that the edge of the wafer cannot be distributed on the photoresist distribution is reduced, the rotation or the rotation speed is not required to be improved, and the wafer cannot be thrown out or cracked due to the stress generated by the centrifugal action.
The above-mentioned embodiments and the accompanying drawings are only for illustrating the technical solutions and effects of the present invention, and are not to be construed as limiting the present invention. It is to be understood that those skilled in the art can modify and change the above-described embodiments without departing from the technical spirit and scope of the present invention as defined in the appended claims.
Claims (10)
1. A method of photoresist coating, comprising: and spraying photoresist at least two points above the wafer.
2. The method of claim 1, wherein the spots for ejecting the photoresist are provided at different radii of the center of the wafer.
3. The photoresist coating method according to claim 1, wherein the position of the point of spraying the photoresist and the speed and spraying time of spraying the photoresist from the nozzle are controlled according to the size of the wafer, which is 5 inches, 6 inches, 8 inches, 12 inches, or more than 12 inches.
4. The method of claim 1, wherein the uniformity of the photoresist on the surface of the wafer is measured, and the speed of spraying the photoresist from the spraying point and the spraying time are adjusted according to the measured data.
5. A photoresist coating apparatus, comprising: the spraying plate is provided with at least two nozzles.
6. The photoresist coating apparatus of claim 5, wherein the spray disk is circular, and the nozzles are uniformly arranged circumferentially at a first radius and the nozzles are uniformly arranged circumferentially at a second radius, centered at the center of the spray disk.
7. The photoresist coating apparatus according to claim 5, wherein each of the nozzles is connected to a spray amount control unit, and the spray amount control unit comprises a motor for independently controlling the flow rate or a valve for independently controlling the opening degree.
8. The photoresist coating apparatus of claim 7, further comprising:
a photoresist film thickness measuring unit for obtaining measurement data;
the spraying amount control unit comprises a controller;
the photoetching film thickness measuring unit is electrically connected with the controller and comprises an elevation measurer or an image pickup processor;
the controller sends a control signal to the motor or the valve.
9. The photoresist coating apparatus of claim 8, further comprising: and the program memory is used for recording wafer size data, control signal data and measurement data.
10. The photoresist coating apparatus of one of claims 5 to 9, wherein the photoresist coating apparatus is adapted to a chemical used in a photolithography process, the chemical comprising a G-line photoresist, an I-line photoresist, an Krf photoresist, an Arf photoresist, an antireflective material, or a fill material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011215536.7A CN112255885A (en) | 2020-11-04 | 2020-11-04 | Photoresist coating method and coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011215536.7A CN112255885A (en) | 2020-11-04 | 2020-11-04 | Photoresist coating method and coating device |
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| Publication Number | Publication Date |
|---|---|
| CN112255885A true CN112255885A (en) | 2021-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011215536.7A Pending CN112255885A (en) | 2020-11-04 | 2020-11-04 | Photoresist coating method and coating device |
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| Country | Link |
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| CN (1) | CN112255885A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115770708A (en) * | 2022-11-24 | 2023-03-10 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202057958U (en) * | 2011-05-18 | 2011-11-30 | 京东方科技集团股份有限公司 | Photoresist spraying apparatus |
| CN107930917A (en) * | 2017-12-21 | 2018-04-20 | 上海华力微电子有限公司 | A kind of photoresist coating system and method |
| CN110888302A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Scanning type photoresist coating system and method |
-
2020
- 2020-11-04 CN CN202011215536.7A patent/CN112255885A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202057958U (en) * | 2011-05-18 | 2011-11-30 | 京东方科技集团股份有限公司 | Photoresist spraying apparatus |
| CN107930917A (en) * | 2017-12-21 | 2018-04-20 | 上海华力微电子有限公司 | A kind of photoresist coating system and method |
| CN110888302A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Scanning type photoresist coating system and method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115770708A (en) * | 2022-11-24 | 2023-03-10 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN115770708B (en) * | 2022-11-24 | 2023-12-05 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
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