CN112242098B - Substrate, preparation method thereof and display panel - Google Patents

Substrate, preparation method thereof and display panel Download PDF

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Publication number
CN112242098B
CN112242098B CN202011094237.2A CN202011094237A CN112242098B CN 112242098 B CN112242098 B CN 112242098B CN 202011094237 A CN202011094237 A CN 202011094237A CN 112242098 B CN112242098 B CN 112242098B
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substrate
grid
film layer
film
pillars
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CN112242098A (en
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潘于新
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TCL Huaxing Photoelectric Technology Co Ltd
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TCL Huaxing Photoelectric Technology Co Ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements

Abstract

The application discloses base plate and preparation method, display panel thereof, the base plate includes: a substrate; the film layers are arranged on the substrate at intervals, and a grid-shaped structure or a grid-shaped structure is arranged between every two adjacent film layers. This application is through preparing a plurality of retes of adjacent setting on the basement, and sets up latticed structure or grid structure and act as the buffer between two adjacent retes, shortens the thick segment difference of membrane of two retes, promotes the thick homogeneity of back processing procedure rete edge membrane, has alleviated the uneven technical problem of rete edge thickness that prior art exists.

Description

Substrate, preparation method thereof and display panel
Technical Field
The application relates to the technical field of display, in particular to a substrate, a preparation method of the substrate and a display panel.
Background
With the development of communication technology, electronic devices such as smart phones are becoming more and more popular. In the process of preparing a display panel, some films, such as an organic insulating photoresist layer, a color resist layer, a support pillar, etc., need to be prepared on the existing film by using a coating process, and if the difference between the preset section of the existing film and the preset section of the film to be prepared is too large, after the film is formed on the film to be prepared, the problems of film accumulation, uneven thickness, etc., easily occur at the junction of the film to be prepared and the existing film, thereby causing uneven display at the edge and seriously affecting the display quality of the display device.
Disclosure of Invention
The invention aims to provide a substrate, a preparation method thereof and a display panel, and aims to solve the technical problems of overlarge difference between the existing film and the preset region of the film to be manufactured and uneven edge thickness.
To achieve the above object, the present invention provides a substrate comprising: a substrate; the film layers are arranged on the substrate at intervals, and a grid-shaped structure or a grid-shaped structure is arranged between every two adjacent film layers.
Furthermore, the substrate further comprises a flat layer which is filled in the grid-shaped structure or the grid-shaped structure and covers one surface of the film layer far away from the base.
Further, the width of the lattice-like structure or the grid-like structure is 5-30 um.
In order to achieve the above object, the present invention further provides a method for preparing the substrate, comprising the steps of: providing a substrate; and sequentially manufacturing a plurality of film layers on the substrate, and forming a corresponding grid-shaped structure or grid-shaped structure on the side edge of each film layer while forming one film layer.
Further, the step of sequentially manufacturing a plurality of film layers on the substrate specifically comprises the following steps: forming a first film layer on the substrate, wherein the first film layer is patterned to form a plurality of first units arranged in an array;
each first unit includes: a first main film layer; the first column body is arranged on one side edge of the first main film layer; the first columns form a first net-shaped structure at the junction of two adjacent first main film layers.
Further, the step of sequentially manufacturing a plurality of film layers on the substrate specifically comprises the following steps:
forming a second film layer on the substrate, wherein the second film layer is patterned to form a plurality of second units arranged at intervals; and forming a third film layer on the substrate, wherein the third film layer is arranged between two adjacent second film layers and is patterned to form a third unit.
Further, each second cell includes: a second main film layer; the second column body is arranged on one side edge of the second main film layer;
each third unit includes: the third main film layer is arranged between the two adjacent second units; the at least one third cylinder is arranged between the second main film layer and the third main film layer;
when the number of the second main film layers is even and the number of the third main film layers is odd, the second column forms a second mesh structure at the junction of the second main film layers and the third main film layers, and the third column forms a third mesh structure at the junction of the second main film layers and the third main film layers.
Further, after the step of forming the third film on the substrate, the method further includes: forming a fourth film on the substrate, wherein the fourth film is subjected to patterning treatment to form a fourth unit; the fourth unit includes: the fourth main film layer is arranged between the second unit and the third unit; the fourth cylinder is arranged between the fourth main film layer and the second main film layer; wherein the fourth pillar forms a fourth net structure at the junction of the four main film layers and the second main film layer.
Further, the step of sequentially manufacturing a plurality of film layers on the substrate specifically comprises the following steps: forming a fifth film layer on the substrate, wherein the fifth film layer is patterned to form fifth units arranged at intervals; forming a sixth film layer on the substrate, wherein the sixth film layer is arranged in a gap between every two adjacent fifth film layers; each fifth unit includes: a fifth main film layer; the at least one fifth cylinder is arranged on the side edge of the fifth main film layer; wherein the fifth pillars form a fifth network structure of the fifth main film layer and the sixth film layer.
In order to achieve the above object, the present invention also provides a display panel including the substrate described above or the substrate prepared according to the preparation method described above.
The substrate and the preparation method thereof and the display panel provided by the invention have the technical effects that the plurality of adjacent films are prepared on the substrate, and the grid-shaped structure or the grid-shaped structure is arranged between the two adjacent films to serve as a buffer area, so that the film thickness section difference of the two films is shortened, the film thickness uniformity of the edge of the film in the post-processing process is improved, and the technical problem of uneven film edge thickness in the prior art is solved.
Drawings
The technical solutions and other advantages of the present application will become apparent from the following detailed description of specific embodiments of the present application when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic structural diagram of a first substrate in embodiment 1 of the present application.
Fig. 2 is a plan view of a first substrate according to embodiment 1 of the present application.
Fig. 3 is a flowchart of a method for manufacturing a first substrate according to embodiment 1 of the present application.
Fig. 4 is a schematic structural diagram of a completed film layer in example 1 of the present application.
Fig. 5 is a schematic structural diagram of a second substrate according to embodiment 2 of the present application.
Fig. 6 is a plan view of a second substrate according to embodiment 2 of the present application.
Fig. 7 is a flow chart of the preparation of the film described in example 2 of the present application.
Fig. 8 is a schematic structural diagram of a third substrate according to embodiment 3 of the present application.
Fig. 9 is a plan view of a third substrate according to embodiment 3 of the present application.
Fig. 10 is a flow chart of the preparation of the film described in example 3 of the present application.
Fig. 11 is a schematic structural diagram of a fourth substrate according to embodiment 4 of the present application.
Fig. 12 is a plan view of a fourth substrate according to embodiment 4 of the present application.
Fig. 13 is a flow chart of the preparation of the film described in example 4 of the present application.
The components of the drawings are identified as follows:
1 a substrate; 2, film layer;
3 a flat layer;
10 a first grid-like structure or grid-like structure; 20 a second grid-like structure or grid-like structure;
30 a third grid-like structure or grid-like structure; 40 a fourth grid-like structure or grid-like structure;
50 a fifth grid-like structure or grid-like structure; 60 a sixth grid-like structure or grid-like structure;
11 a first main film layer; 12 a first cylinder;
101 a first unit; 102 a second unit;
103 a third unit; 104 a fourth unit;
105 a fifth unit; 106 a sixth unit;
201 a second main film layer; 201 a second cylinder;
203 a third main film layer; 204 a third column;
301 a fourth main film layer; 302 a fourth cylinder;
401 a fifth main film layer; 402 a fifth cylinder;
403 a sixth main film layer;
100 a first substrate; 200 a second substrate;
300 a third substrate; 400 fourth substrate.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Example 1
As shown in fig. 1-2, the present embodiment provides a first substrate 100, which includes a substrate 1, a film layer 2, and a planarization layer 3.
A plurality of retes 2 are the setting of mutual interval in basement 1, wherein have latticed structure or grid structure 10 between adjacent rete 2, and the thickness of rete 2 is more than 1 um. The film 2 has a plurality of first units 101, and each first unit 101 includes a first main film 11 and a first pillar 12. The first main film layer 11 is arranged on the substrate 1; at least one first pillar 12 is disposed on the substrate 1 and located at one side of the first main film 11. The height of the first pillars 12 is greater than one third of the first main film layer 11 and less than the height of the first main film layer 11, and one or more first pillars 12 form a first grid structure or grid structure 10.
As shown in fig. 2, a first grid structure or grid structure 10 is formed at the intersection of two adjacent first main film layers 11, and the width of the first grid structure or grid structure 10 is 5-30 um. The pattern of the hollowed-out positions of the grid-like structure or the grid-like structure 10 may be a square, a circle, a diamond or other irregular pattern, which is not limited herein. In this embodiment, the first grid structure or the grid structure 10 serves as a buffer area between two adjacent first main film layers 11, so as to shorten the film thickness section difference of the two first main film layers 11, improve the uniformity of the film thickness of the edge of the post-processing film layer, and alleviate the technical problem of the prior art that the film edge thickness is uneven. The planarization layer 3 is filled in the first grid structure or grid structure 10 and covers the upper surface of the film layer 2. In this embodiment, the plurality of films 2 are made of the same material.
As shown in fig. 3, the present embodiment further provides a first manufacturing method for the first substrate 100, which includes the following steps: s11) -S13).
S11) providing a substrate.
S12) sequentially manufacturing a plurality of film layers on the substrate, and forming a corresponding grid-shaped structure or grid-shaped structure on the side edge of each film layer when each film layer is formed.
As shown in fig. 4, a first film layer 2 is formed on a substrate, and a plurality of film layers 2 are made of the same material and are all photoresist layers including color resists, PS, BPS, organic insulating layers, and the like. In this embodiment, a mask is used to pattern the first film layer 2 to form a plurality of first units 101 arranged in an array. The patterning process includes coating, exposing, developing, baking, and the like, which are not described herein in detail. Each first unit 101 includes a first main film 11 and a first pillar 12. The first main film layer 11 is arranged on the substrate 1; at least one first pillar 12 is disposed on the substrate 1 and located at one side of the first main film 11. The height of the first pillars 12 is greater than one third of the first main film layer 11 and less than the height of the first main film layer 11, and one or more first pillars 12 form a first grid structure or grid structure 10. A first grid-shaped structure or grid-shaped structure 10 is formed at the boundary of two adjacent first main film layers 11, referring to fig. 2, the width of the first grid-shaped structure or grid-shaped structure 10 is 5-30 um, and the hollow position pattern of the grid-shaped structure or grid-shaped structure 10 may be a square, a circle, a diamond or other irregular pattern, which is not limited herein. Grid structure or grid structure 10 act as the buffer zone between two adjacent first main rete 11, shorten the thick segment difference of membrane of two first main rete 11, promote the thick homogeneity of back processing procedure rete edge membrane, have alleviated the uneven technical problem of rete edge thickness that prior art exists.
S13) forming a flat layer filling the grid-like structure or the grid-like structure and covering the upper surface of the film layer. The planarization layer 3 fills the gap between the first main film 11 and the first pillar 12 and the gap between two adjacent first pillars 12, and covers the upper surface of the first main film 11. The planarization layer 3 serves to planarize and protect the layers below the planarization layer 3.
The embodiment provides a substrate and a preparation method thereof, two adjacent layers of films made of the same material are prepared on a substrate through a mask plate, a grid-shaped structure or a grid-shaped structure is arranged between the two adjacent layers to serve as a buffer area, the film thickness section difference of the two films is shortened, the film thickness uniformity of the edges of the films in the post-processing process is improved, and the technical problem of uneven film edge thickness in the prior art is solved.
The embodiment also provides a display panel, which includes the substrate described above or the substrate prepared according to the preparation method described above.
Example 2
The present embodiment provides a substrate, a method for manufacturing the same, and a display panel, including most of the technical solutions of embodiment 1, and the difference is that the film layer of the present embodiment is two film layers made of different materials.
As shown in fig. 5-6, the present embodiment provides a second substrate 200 including a substrate 1, a film layer 2, and a planarization layer 3.
A plurality of retes 2 are the setting of mutual interval in basement 1, wherein have latticed structure or grid structure 10 between adjacent rete 2, and the thickness of rete 2 is more than 1 um.
The film 2 has an even number of second units 102 and an odd number of third units 103, the third units 103 are disposed between the two second units 102, wherein the material of the film of the second units 102 is different from the material of the film of the third units 103. Each second cell 102 includes a second main film 201 and a second pillar 202. The two second pillars 202 are disposed on one side of the second main film 201. The height of the second pillars 202 is greater than one third of the second main film 201 and less than the height of the second main film 201, and one or more second pillars 202 form a second grid structure or grid structure 20. Each third unit 103 includes a third main film 203 and a third pillar 204. The third main film layer 203 is disposed between two adjacent second cells 102. Two third pillars 204 are disposed between the second main film 201 and the third main film 203. The height of the third pillars 204 is greater than one third of the third main film layer 203 and less than the height of the third main film layer 203, and one or more third pillars 204 form a third grid structure or grid structure 30. When the number of the second main film 201 is even and the number of the third main film 203 is odd, the second pillars 202 form the second mesh structures 20 of the second main film 201 and the third main film 203, and the third pillars 204 form the third mesh structures 30 at the junctions of the second main film 201 and the third main film 203.
The flat layer 3 fills the gap between the two films. Specifically, the flat layer 3 includes a gap between the second main film layer 201 and the second pillar 202, a gap between two adjacent second pillars 202, a gap between the second pillar 202 and the third main film layer 203, a gap between the third main film layer 203 and the third pillar 204, and a gap between two adjacent third pillars 204. The planarization layer 3 is mainly used to planarize and protect the layers below the planarization layer 3.
The present embodiment further provides a method for manufacturing a substrate, which is used to manufacture the second substrate, and includes the following steps S21) -S23).
S21) providing a substrate.
S22) sequentially manufacturing a plurality of film layers on the substrate, and forming a corresponding grid-shaped structure or grid-shaped structure on the side edge of each film layer when each film layer is formed.
As shown in fig. 7, step S22) specifically includes the following steps S221) to S222).
S221) forming a second film layer on the substrate, wherein the second film layer is patterned to form a plurality of second units arranged at intervals. And forming a plurality of second units arranged at intervals on the substrate by adopting a second mask plate.
As shown in fig. 5, the material of the film layer of the second unit 102 is different from the material of the film layer of the third unit 103. Each second cell 102 includes a second main film 201 and a second pillar 202. The two second pillars 202 are disposed on one side of the second main film 201. The height of the second pillars 202 is greater than one third of the second main film 201 and less than the height of the second main film 201, and one or more second pillars 202 form a second grid structure or grid structure 20.
S222) forming a third film layer on the substrate, wherein the third film layer is arranged between two adjacent second film layers and is patterned to form a third unit. And patterning the third film layer by using a third mask plate to form a third unit.
As shown in fig. 5, each third unit 103 includes a third main film 203 and a third pillar 204. The third main film layer 203 is disposed between two adjacent second cells 102. Two third pillars 204 are disposed between the second main film 201 and the third main film 203. The height of the third pillars 204 is greater than one third of the third main film layer 203 and less than the height of the third main film layer 203, and one or more third pillars 204 form a third grid structure or grid structure 30. When the number of the second main film 201 is even and the number of the third main film 203 is odd, the second pillars 202 form the second mesh structures 20 of the second main film 201 and the third main film 203, and the third pillars 204 form the third mesh structures 30 at the junctions of the second main film 201 and the third main film 203.
S23) forming a flat layer filling the grid-shaped structure or the grid-shaped structure and covering the upper surface of the film layer.
As shown in fig. 5, the planarization layer 3 fills the gap between the two films. Specifically, the flat layer 3 includes a gap between the second main film layer 201 and the second pillar 202, a gap between two adjacent second pillars 202, a gap between the second pillar 202 and the third main film layer 203, a gap between the third main film layer 203 and the third pillar 204, and a gap between two adjacent third pillars 204. The planarization layer 3 is mainly used to planarize and protect the layers below the planarization layer 3.
The embodiment provides a substrate and a preparation method thereof, two adjacent layers of films made of different materials are prepared on a substrate through two mask plates, a grid-shaped structure or a grid-shaped structure is arranged between the two adjacent films to serve as a buffer area, the film thickness section difference of the two films is shortened, the uniformity of the film thickness of the edges of the films in the post-processing process is improved, and the technical problem of uneven film edge thickness in the prior art is solved.
Example 3
The embodiment provides a substrate, a manufacturing method thereof and a display panel, which include most technical solutions of embodiment 2, and the difference is that the film further includes a fourth unit.
As shown in fig. 8-9, the present embodiment provides a third substrate 300 including a substrate 1, a film layer 2, and a planarization layer 3.
A plurality of retes 2 are the setting of mutual interval in basement 1, wherein have latticed structure or grid structure 10 between adjacent rete 2, and the thickness of rete 2 is more than 1 um.
The film 2 has a second unit 102, a third unit 103 and a fourth unit 104, and are arranged in an array. In this embodiment, the third substrate 300 is provided with the second unit 102, the third unit 103, the fourth unit 104, and the second unit 102 sequentially from left to right on the base 1. The second unit 102, the third unit 103 and the fourth unit 104 are made of different film materials.
Each second cell 102 includes a second main film 201 and a second pillar 202. Each third unit 103 includes a third main film 203 and a third pillar 204. Each fourth cell 104 includes a fourth main film layer 301 and a fourth pillar 302.
Specifically, two second pillars 202 are disposed on one side of the second main film 201. The height of the second pillars 202 is greater than one third of the second main film 201 and less than the height of the second main film 201, and one or more second pillars 202 form a second grid structure or grid structure 20.
The third main film layer 203 is disposed between the adjacent second cells 102 and fourth cells 104. Two third pillars 204 are disposed between the second main film 201 and the fourth main film 301. The height of the third pillars 204 is greater than one third of the third main film layer 203 and less than the height of the third main film layer 203, and one or more third pillars 204 form a third grid structure or grid structure 30. The second pillars 202 form the second network 20 of the second main film 201 and the third main film 203, and the third pillars 204 form the third network 30 at the junction of the second main film 201 and the fourth main film 301.
The fourth main film 301 is disposed between the third pillar 204 and the fourth pillar 302, and the fourth pillar 302 forms the fourth mesh structure 40 at the boundary between the fourth main film 301 and the second main film 201.
The present embodiment further provides a method for preparing a substrate, which is used to prepare the third substrate, and includes the following steps S31) -S33).
S31) providing a substrate.
S32) sequentially manufacturing a plurality of film layers on the substrate, and forming a corresponding grid-shaped structure or grid-shaped structure on the side edge of each film layer when each film layer is formed.
As shown in fig. 10, step S32) specifically includes the following steps S321) to S323).
S321) forming a second film layer on the substrate, wherein the second film layer is patterned to form a plurality of second units arranged at intervals. And forming a plurality of second units arranged at intervals on the substrate by adopting a second mask plate.
S322) forming a third film layer on the substrate, wherein the third film layer is patterned to form a third unit. And patterning the third film layer by using a third mask plate to form a third unit.
S323) forming a fourth film on the substrate, wherein the fourth film is patterned to form a fourth unit. And patterning the third film layer by adopting a fourth mask plate to form a fourth unit.
As shown in fig. 8, the film 2 has a second unit 102, a third unit 103 and a fourth unit 104, and are arranged in an array. In this embodiment, the third substrate 300 is provided with the second unit 102, the third unit 103, the fourth unit 104, and the second unit 102 sequentially from left to right on the base 1. The second unit 102, the third unit 103 and the fourth unit 104 are made of different film materials.
Each second cell 102 includes a second main film 201 and a second pillar 202. Each third unit 103 includes a third main film 203 and a third pillar 204. Each fourth cell 104 includes a fourth main film layer 301 and a fourth pillar 302.
Specifically, two second pillars 202 are disposed on one side of the second main film 201. The height of the second pillars 202 is greater than one third of the second main film 201 and less than the height of the second main film 201, and one or more second pillars 202 form a second grid structure or grid structure 20.
The third main film layer 203 is disposed between the adjacent second cells 102 and fourth cells 104. Two third pillars 204 are disposed between the second main film 201 and the fourth main film 301. The height of the third pillars 204 is greater than one third of the third main film layer 203 and less than the height of the third main film layer 203, and one or more third pillars 204 form a third grid structure or grid structure 30. The second pillars 202 form the second network 20 of the second main film 201 and the third main film 203, and the third pillars 204 form the third network 30 at the junction of the second main film 201 and the fourth main film 301.
The fourth main film 301 is disposed between the third pillar 204 and the fourth pillar 302, and the fourth pillar 302 forms the fourth mesh structure 40 at the boundary between the fourth main film 301 and the second main film 201.
The embodiment provides a substrate and a preparation method thereof, three adjacent layers of films made of different materials are prepared on a substrate through three mask plates, a grid structure or a grid structure is arranged between the two adjacent films to serve as a buffer area, the film thickness section difference of the two films is shortened, the film thickness uniformity of the edges of the films in the post-processing process is improved, and the technical problem of uneven film edge thickness in the prior art is solved.
Example 4
The embodiment provides a substrate, a manufacturing method thereof and a display panel, which includes most technical solutions of embodiment 2, and is different in that the film layer further includes a fifth unit and a sixth unit.
As shown in fig. 11 to 12, the present embodiment provides a fourth substrate 400, and the film layer 2 includes a fifth unit 105 and a sixth unit 106.
Each fifth cell 105 includes a fifth main film layer 401 and a fifth pillar 402. At least one fifth pillar 402 is disposed on a side of the fifth main film 401. The sixth unit 106 is a sixth main film 403, wherein the fifth pillar 402 forms the fifth main film 401, the fifth mesh structure 50 of the sixth unit 106 and the sixth mesh structure 60.
As shown in fig. 13, the present embodiment further provides a method for manufacturing a substrate, which is used to manufacture the fourth substrate, and includes the following steps: s41) -S43).
S41) providing a substrate.
S42) sequentially manufacturing a plurality of film layers on the substrate, and forming a corresponding grid-shaped structure or grid-shaped structure on the side edge of each film layer when each film layer is formed.
As shown in fig. 11, step S42) specifically includes the following steps S421) to S422).
S421) forming a fifth film layer on the substrate, wherein the fifth film layer is patterned to form fifth units arranged at intervals.
S422) forming a sixth film layer on the substrate, wherein the sixth film layer is arranged in a gap between every two adjacent fifth film layers.
As shown in fig. 11, each fifth unit 105 includes a fifth main film layer 401 and a fifth pillar 402. At least one fifth pillar 402 is disposed on a side of the fifth main film 401. The sixth unit 106 is a sixth main film 403, wherein the fifth pillar 402 forms the fifth main film 401, the fifth mesh structure 50 of the sixth unit 106 and the sixth mesh structure 60.
The embodiment provides a substrate, a manufacturing method thereof and a display panel, wherein two adjacent layers of films made of different materials are manufactured on a substrate, a grid-shaped structure or a grid-shaped structure is arranged between the two adjacent films to serve as a buffer area, the film thickness section difference of the two films is shortened, the uniformity of the film thickness of the edge of the film in the post-processing process is improved, and the technical problem of uneven film edge thickness in the prior art is solved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The substrate, the manufacturing method thereof, and the display panel provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principles and embodiments of the present application, and the description of the embodiments is only used to help understand the technical solutions and the core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (5)

1. A method for preparing a substrate, comprising:
providing a substrate;
sequentially manufacturing a plurality of film layers on the substrate through a mask plate, and enabling the film layers to be arranged on the substrate at intervals; when each film layer is formed, a corresponding grid-shaped structure or grid-shaped structure is formed on the side edge of the film layer, so that the grid-shaped structure or grid-shaped structure is positioned between the adjacent film layers;
forming a flat layer to fill the grid-like structure or the grid-like structure and cover the side of the film layer far away from the substrate;
wherein the grid-shaped structure or the grid-shaped structure comprises more than two first columns; the height of the first column is more than one third of the height of the film layer and less than the height of the film layer; gaps exist between two adjacent first pillars, and gaps exist between the film layer and the first pillars, so that the flat layer fills the gaps between the film layer and the first pillars and the gaps between two adjacent first pillars.
2. The production method according to claim 1, wherein the height of the film layer is 1 μm or more, and the width of the lattice-like structure or the grid-like structure is 5 to 30 μm.
3. A substrate, comprising:
a substrate;
the film layers are arranged on the substrate at intervals, and a grid-shaped structure or a grid-shaped structure is arranged between the adjacent film layers;
a flat layer filling the grid-shaped structure or the grid-shaped structure and covering one side of the film layer far away from the substrate;
wherein the grid-shaped structure or the grid-shaped structure comprises more than two first columns; the height of the first column is more than one third of the height of the film layer and less than the height of the film layer; gaps exist between two adjacent first pillars, and gaps exist between the film layer and the first pillars, so that the flat layer fills the gaps between the film layer and the first pillars and the gaps between two adjacent first pillars.
4. The substrate according to claim 3, wherein the height of the film layer is 1 μm or more, and the width of the mesh-like structure or the gate-like structure is 5 to 30 μm.
5. A display panel comprising the substrate of claim 3 or 4.
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