CN101071765A - Thin film pattern layer structure and its manufacturing method - Google Patents
Thin film pattern layer structure and its manufacturing method Download PDFInfo
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- CN101071765A CN101071765A CN 200610075799 CN200610075799A CN101071765A CN 101071765 A CN101071765 A CN 101071765A CN 200610075799 CN200610075799 CN 200610075799 CN 200610075799 A CN200610075799 A CN 200610075799A CN 101071765 A CN101071765 A CN 101071765A
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- film pattern
- thin film
- pattern layer
- layer structure
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Abstract
The invention relates to a film pattern layer structure, comprising substrate, barriers and film pattern layer, where multiple containing spaces are formed between adjacent barriers, and the film pattern layers in at least two containing spaces are interlinked. And the invention relates to a film pattern layer structure making method, comprising the steps: providing a substrate; forming multiple barriers on the substrate, where these barriers and the substrates define multiple containing spaces; taking the barriers between at least two adjacent containing spaces as a part of the containing spaces, and injecting the required ink into the containing spaces by ink jet; and drying and curing the ink in the containing spaces to form the film pattern layer.
Description
[technical field]
The present invention relates to a kind of thin film pattern layer structure and manufacture method thereof.
[background technology]
The method of making patterned layer on substrate at present mainly comprises: light lithography method and ink-jet method.
The light lithography method: on the board structure of the required film of preparation coating, the coating photoresistance material, the light shield that will have predetermined pattern is located on the photoresist, and expose and develops, or add etch process, and the patterned layer on substrate that formation has predetermined pattern.This light lithography method needs main equipment such as vacuum extractor or complicated processing procedure, and the service efficiency of material is lower and cause the manufacturing cost height.
Ink-jet method: ink ejecting method can once form patterned layer on substrate, makes preparation process simplify in a large number, and cost significantly reduces.So ink ejecting method has plurality of advantages such as processing procedure simplification, environmental protection, conservation.In the patterned layer on substrate that carries out was at present made, ink-jet method all was to use ink discharge device to carry out ink-jet on the glass substrate that forms barricade, and successively at the quantitative ink of each receiving space spray printing that is formed by barricade, made ink dried form patterned layer on substrate.Yet, only to the mode of receiving space ink-jet, often cause patterned layer on substrate not enough or too high easily in the bound thickness of barricade, cause the patterned layer on substrate uniformity not good.
[summary of the invention]
In view of this, be necessary the thin film pattern layer structure and the manufacture method thereof that provide a kind of patterned layer on substrate uniformity better.
A kind of thin film pattern layer structure, it comprises substrate, barricade and patterned layer on substrate, forms a plurality of receiving spaces between adjacent barricade and the substrate, wherein at least two interior patterned layer on substrate of receiving space interconnect.
A kind of manufacture method of thin film pattern layer structure, its step is as follows: a substrate is provided; Form a plurality of barricades on this substrate, this barricade and substrate limit a plurality of receiving spaces; Part with the barricade between at least two adjacent containing spaces is regarded receiving space as sprays into required ink in the receiving space by ink discharge device; Ink in the dry solidification receiving space and form patterned layer on substrate.
Compared to prior art, the manufacture method of described thin film pattern layer structure, a part of the barricade between at least two adjacent containing spaces being regarded as receiving space, by an ink discharge device required ink is sprayed in the receiving space, after patterned layer on substrate forms, patterned layer on substrate will cover this barricade partly, so can improve the uniformity of patterned layer on substrate.With the thin film pattern layer structure that the method obtains, patterned layer on substrate has the better uniformity.
[description of drawings]
A kind of thin film pattern layer structure generalized section that Fig. 1 provides for first embodiment of the invention.
A kind of thin film pattern layer structure vertical view that Fig. 2 provides for first embodiment of the invention.
A kind of thin film pattern layer structure generalized section that Fig. 3 provides for second embodiment of the invention.
The substrate vertical view that Fig. 4 provides for third embodiment of the invention.
The substrate vertical view that Fig. 5 provides for third embodiment of the invention with barricade.
The substrate vertical view that is sprayed with ink that Fig. 6 provides for third embodiment of the invention.
The substrate vertical view that Fig. 7 provides for third embodiment of the invention with patterned layer on substrate.
The thin film pattern layer structure generalized section that Fig. 8 provides for third embodiment of the invention with protective layer.
[embodiment]
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
As shown in Figures 1 and 2, be a kind of thin film pattern layer structure 120 schematic diagrames of first embodiment of the invention.
This thin film pattern layer structure 120 comprises: substrate 100, barricade 106 and patterned layer on substrate 110, form receiving space (figure does not show) between the wherein adjacent barricade 106, and at least two interior patterned layer on substrate 110 of receiving space interconnect.Patterned layer on substrate 110 thickness are higher than the height of barricade 106.
As shown in Figure 3, be a kind of thin film pattern layer structure 120 ' schematic diagram of second embodiment of the invention.
Thin film pattern layer structure 120 ' and 120 difference are: for moisture resistance, anti fouling performance, the non-oxidizability of strengthening thin film pattern layer structure 120 ' and the flatness of improving patterned layer on substrate 110 surfaces, this thin film pattern layer structure 120 ' further comprises the protective layer (Overcoat) 111 that covers barricade 106 and patterned layer on substrate 110.This thin film pattern layer structure 120 ' also comprises the conductive layer 112 that is arranged on the protective layer 111.
Please consulting Fig. 4 together to Fig. 7, is the manufacture method schematic diagram of a kind of thin film pattern layer structure of providing of third embodiment of the invention, and its step is as follows:
Step 1: provide a substrate 100, as shown in Figure 4.This baseplate material is selected glass for use in the present embodiment.Certainly, baseplate material also can be selected quartz glass, silicon wafer (Silicon Wafer), metal or plastics etc. for use.
Step 2: form a plurality of barricades 102 on this substrate 100, this barricade 102 limits a plurality of receiving spaces 106 with substrate 100, as shown in Figure 5.The barricade material can be made up of resin material.This barricade 102 can form photoresist layer exposure imaging by light shield.This barricade 102 has same height.
Step 3: the part with the barricade 102 between at least two adjacent containing spaces 106 is regarded receiving space 106 as sprays into required ink 108 in the receiving space 106 by an ink discharge device (figure does not show), as shown in Figure 6.
This ink discharge device can be selected Thermal Bubble Ink-jet Printer device (Thermal Bubble Ink Jet PrintingApparatus) or piezoelectric ink jet device (Piezoelectric Ink Jet PrintingApparatus) for use.
Step 4: the ink 108 in the dry solidification receiving space 106 and form patterned layer on substrate 110, as shown in Figure 7.Patterned layer on substrate 110 thickness are higher than the height of barricade 106, and cover the barricade between at least two adjacent containing spaces.This step is mainly by a vacuum extractor, a heater or a light-emitting device, the ink 108 of receiving space 106 is carried out dry solidification, perhaps adopt any two or wantonly three kinds of above-mentioned three's mode to carry out dry solidification, and light-emitting device comprise the UV-light luminous irradiation unit.
The manufacture method of the thin film pattern layer structure of present embodiment can further comprise a step 5, forms the protective layer 111 that covers barricade 106 and patterned layer on substrate 110, as shown in Figure 8.Protective layer 111 can be strengthened moisture resistance, anti fouling performance, the non-oxidizability of thin film pattern layer structure, improves the flatness on patterned layer on substrate 110 surfaces.The protective layer 111 general transparent materials of high reliability that adopt are made, as Polyimide resin system, epoxy resin, acryl resin system, polyvinyl alcohol resin system etc.
The manufacture method of the thin film pattern layer structure of present embodiment can further comprise a step 6, forms transparency conducting layer 112 on protective layer 111, as shown in Figure 3.The material of this transparency conducting layer 112 can be indium tin oxide (Indium Tim Oxide), indium-zinc oxide (Indium Zinc Oxide), cadmium indium oxide (Cadmium Tim Oxide) and zinc oxide (Zinc Oxide) etc.This transparency conducting layer 112 can adopt vacuum splashing and plating or evaporation coating technique to form.
The manufacture method of the thin film pattern layer structure of present embodiment, a part of the barricade between at least two adjacent containing spaces being regarded as receiving space, by an ink discharge device required ink is sprayed in the receiving space, after patterned layer on substrate forms, patterned layer on substrate will cover this barricade partly, so can improve the uniformity of patterned layer on substrate.With the thin film pattern layer structure that the method obtains, patterned layer on substrate has the better uniformity.
It is pointed out that thin film pattern layer structure of the present invention and manufacture method thereof are applicable to manufacturing of colored filter and organic light emitting apparatus etc.In the processing procedure of colored filter, available this processing procedure is finished the manufacturing of redgreenblue color layers, correspondingly, barricade is formed by the second layer barricade layer on black matrix (the first barricade layer) and the black matrix, and therefore black matrix, second layer barricade layer and glass constitute a plurality of receiving spaces.Certainly barricade also can only constitute aforementioned identical structure by black matrix.And in the manufacturing of organic light emitting apparatus, available this processing procedure is finished the conductor layer of organic light emitting apparatus, the manufacturing of luminescent layer and electronics electricity hole transport layer etc.Being formed Thinfilm pattern and required ink can be different.
In addition, those skilled in the art can also do other variation in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (23)
1. thin film pattern layer structure, it comprises substrate, barricade and patterned layer on substrate, forms a plurality of receiving spaces between adjacent barricade and the described substrate, it is characterized in that the patterned layer on substrate at least two receiving spaces interconnects.
2. thin film pattern layer structure as claimed in claim 1 is characterized in that described baseplate material is selected from glass, quartz glass, silicon wafer, metal or plastics.
3. thin film pattern layer structure as claimed in claim 1 is characterized in that described barricade is made up of resin material.
4. thin film pattern layer structure as claimed in claim 1 is characterized in that, described barricade is by light shield photoresist layer exposure imaging to be formed.
5. thin film pattern layer structure as claimed in claim 1 is characterized in that, described patterned layer on substrate is to form by ink discharge device.
6. thin film pattern layer structure as claimed in claim 1 is characterized in that, described Thinfilm pattern layer thickness is higher than wall height.
7. thin film pattern layer structure as claimed in claim 1 is characterized in that, this thin film pattern layer structure further comprises the protective layer that covers described barricade and described patterned layer on substrate.
8. thin film pattern layer structure as claimed in claim 1 is characterized in that, this thin film pattern layer structure further comprises the conductive layer that covers described barricade and described patterned layer on substrate.
9. thin film pattern layer structure as claimed in claim 7 is characterized in that this thin film pattern layer structure further comprises the conductive layer that covers described protective layer.
10. the manufacture method of a thin film pattern layer structure, its step is as follows:
A substrate is provided;
Form a plurality of barricades on this substrate, this barricade and described substrate limit a plurality of receiving spaces;
Part with the barricade between at least two adjacent containing spaces is regarded receiving space as sprays into required ink in the receiving space by ink discharge device;
Ink in the dry solidification receiving space and form patterned layer on substrate.
11. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described baseplate material is selected from glass, quartz glass, silicon wafer, metal or plastics.
12. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described barricade material is made up of resin material.
13. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described barricade is that exposure forms to the photoresist layer by light shield.
14. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described barricade has same height.
15. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described Thinfilm pattern layer thickness is higher than wall height, and covers the barricade between at least two adjacent containing spaces.
16. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described ink discharge device can be selected Thermal Bubble Ink-jet Printer device or piezoelectric ink jet device for use.
17. the manufacture method of thin film pattern layer structure as claimed in claim 10, wherein, described dry solidification step adopts vacuum extractor, heater or light-emitting device, ink in the receiving space is carried out dry solidification, perhaps adopt any two or wantonly three kinds of above-mentioned three's mode, light-emitting device comprises the UV-light luminous irradiation unit.
18. the manufacture method of thin film pattern layer structure as claimed in claim 10 wherein, further comprises a step after the described dry solidification step: form the protective layer that covers described barricade and described patterned layer on substrate on this substrate.
19. the manufacture method of thin film pattern layer structure as claimed in claim 18, wherein, described protective layer can be made by Polyimide resin system, epoxy resin, acryl resin system or polyvinyl alcohol resin based material.
20. the manufacture method of thin film pattern layer structure as claimed in claim 10 wherein, further comprises a step after the described dry solidification step: form the conductive layer that covers described barricade and described patterned layer on substrate on this substrate.
21. the manufacture method of thin film pattern layer structure as claimed in claim 20, wherein, the material of described conductive layer is indium tin oxide, indium-zinc oxide, cadmium indium oxide or zinc oxide.
22. the manufacture method of thin film pattern layer structure as claimed in claim 18 wherein, further comprises a step after the described formation protective layer step: form the conductive layer that covers described protective layer on this substrate.
23. the manufacture method of thin film pattern layer structure as claimed in claim 22, wherein, the material of described conductive layer is indium tin oxide, indium-zinc oxide, cadmium indium oxide or zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610075799 CN101071765A (en) | 2006-05-09 | 2006-05-09 | Thin film pattern layer structure and its manufacturing method |
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| CN 200610075799 CN101071765A (en) | 2006-05-09 | 2006-05-09 | Thin film pattern layer structure and its manufacturing method |
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| CN101071765A true CN101071765A (en) | 2007-11-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242098A (en) * | 2020-10-14 | 2021-01-19 | Tcl华星光电技术有限公司 | Substrate, preparation method thereof and display panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242098A (en) * | 2020-10-14 | 2021-01-19 | Tcl华星光电技术有限公司 | Substrate, preparation method thereof and display panel |
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Open date: 20071114 |