CN112229857A - Semiconductor detection device and detection method - Google Patents
Semiconductor detection device and detection method Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 159
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 230000010287 polarization Effects 0.000 claims abstract description 93
- 230000007547 defect Effects 0.000 claims description 108
- 230000003287 optical effect Effects 0.000 claims description 107
- 238000007689 inspection Methods 0.000 claims description 54
- 238000001914 filtration Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 description 9
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
Abstract
A semiconductor detection device and a detection method are provided, wherein the semiconductor detection device comprises: the bearing device is used for bearing the wafer to be tested; an incident light system for emitting an initial incident light; the first light splitting unit is used for converting the initial incident light into incident light which is vertically incident to the surface of the wafer to be detected and is used for passing through reflected light formed by reflecting the incident light through the wafer to be detected; the polarization splitting unit is used for polarization splitting the reflected light into first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light; the first detection unit is used for acquiring first detection information to be measured according to the first detection information to be measured; and the second detection unit is used for acquiring second light detection information to be detected according to the second light to be detected. The semiconductor detection device is an improvement of the existing semiconductor detection device.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor detection device and a detection method.
Background
In a semiconductor process, the yield of the device is easily reduced due to defects in the process or material, and the production cost is increased. In particular, as the critical dimensions of circuits are continuously reduced, the requirements for process control become more and more strict. In order to find and solve problems in real time in the actual production process, a defect detection device equipped with high-sensitivity optical and electron beams is generally required to perform online detection on a product, and then, defects are imaged and analyzed for elemental components by a defect observation device such as an electron microscope.
Among existing optical Inspection apparatuses, Bright-Field Inspection (Bright-Field Inspection) equipment is gradually widely used in online Inspection due to its high sensitivity and good applicability to batch Inspection of products.
However, the existing optical detection device still needs to be improved.
Disclosure of Invention
The invention provides a semiconductor detection device and a detection method, which are used for improving the semiconductor detection device.
In order to solve the above technical problem, an aspect of the present invention provides a semiconductor inspection apparatus, including: the bearing device is used for bearing the wafer to be tested; an incident light system for emitting an initial incident light; the first light splitting unit is used for converting the initial incident light into incident light which is vertically incident to the surface of the wafer to be detected and is used for passing through reflected light formed by reflecting the incident light through the wafer to be detected; the polarization splitting unit is used for polarization splitting the reflected light into first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light; the first detection unit is used for acquiring first detection information to be measured according to the first detection information to be measured; and the second detection unit is used for acquiring second light detection information to be detected according to the second light to be detected.
Optionally, the polarization beam splitting unit is used for with the reflection light polarization beam splitting treats the photometry for first photometry and second, the first polarization direction that treats the photometry with the wafer surface parallel that awaits measuring, the second treat the photometry polarization direction with the wafer surface parallel that awaits measuring, just the first polarization direction that treats the photometry with the second treats mutually perpendicular between the photometry polarization direction.
Optionally, the polarization splitting unit is configured to split the polarization of the reflected light into a first light to be measured and a second light to be measured, and the first light to be measured and the second light to be measured have different propagation directions.
Optionally, the first light splitting unit includes a light splitting prism.
Optionally, the polarization splitting unit includes a polarization splitting prism.
Optionally, the method further includes: the first filter is used for filtering the first to-be-detected light, so that an optical signal with the wavelength within a first preset wavelength range in the first to-be-detected light passes through the first filter, and the first to-be-detected light after filtering is transmitted to the first detection unit.
Optionally, the method further includes: and the second optical filter is used for filtering the second light to be detected, so that an optical signal with the wavelength within a second preset wavelength range in the second light to be detected passes through the second optical filter, and the filtered second light to be detected is transmitted to the second detection unit.
Optionally, the first preset wavelength range and the second preset wavelength range are different.
Optionally, the first detection unit includes a first imaging sensor, and the second detection unit includes a second imaging sensor.
Optionally, the method further includes: and the control system is used for acquiring a first defect image according to the first to-be-detected light detection information, acquiring first defect information according to the first defect image, acquiring a second defect image according to the second to-be-detected light detection information, and acquiring second defect information according to the second defect image.
Optionally, the incident light system includes: a light source for emitting a first incident light; and the filtering unit is used for filtering the first incident light, so that an optical signal with the wavelength within a third preset wavelength range in the first incident light passes through the filtering unit to form the initial incident light.
Optionally, the method further includes: and the focusing unit is used for focusing incident light on the surface of the wafer to be detected or in the wafer to be detected.
Correspondingly, the technical scheme of the invention also provides a detection method adopting the semiconductor detection device, which comprises the following steps: providing a wafer to be tested; emitting initial incident light; the initial incident light is turned into the incident light which is vertically incident to the surface of the wafer to be detected, and the incident light is reflected by the wafer to be detected to form reflected light; the reflected light is subjected to polarization splitting to form first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light; acquiring first to-be-detected light detection information according to the first to-be-detected light; and acquiring second light detection information to be detected according to the second light to be detected.
Optionally, the first polarization direction that awaits measuring the light with the wafer surface that awaits measuring is parallel, the second wait to measure the light the polarization direction with the wafer surface that awaits measuring is parallel, just the first polarization direction that awaits measuring the light with mutually perpendicular between the polarization direction that the second awaits measuring the light.
Optionally, the first light to be measured and the second light to be measured have different propagation directions.
Optionally, the method further includes: before first light to be measured detection information is obtained according to the first light to be measured, filtering the first light to be measured so as to pass through an optical signal of the first light to be measured, wherein the wavelength of the optical signal is within a first preset wavelength range.
Optionally, the method further includes: and filtering the second light to be detected before obtaining second light detection information according to the second light to be detected so as to pass through an optical signal of the second light to be detected, wherein the wavelength of the optical signal is within a second preset wavelength range.
Optionally, the first preset wavelength range and the second preset wavelength range are different.
Optionally, the method further includes: acquiring a first defect image according to the first to-be-detected light detection information; acquiring first defect information according to the first defect image; acquiring a second defect image according to the second light detection information to be detected; the second defect image acquires second defect information.
Optionally, the method for forming the initial incident light includes: emitting a first incident light; filtering the first incident light to pass an optical signal with a wavelength within a third preset wavelength range in the first incident light to form the initial incident light.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the semiconductor detection device provided by the technical scheme of the invention, on one hand, the polarization splitting unit can polarize and split the reflected light in the optical path of the reflected light to form the first light to be detected and the second light to be detected, so that the optical signals of 2 lights to be detected with different polarization states can be simultaneously formed in 1 scanning detection by emitting the same incident light for 1 time. On the other hand, since the semiconductor inspection apparatus includes the first inspection unit and the second inspection unit at the same time, the semiconductor inspection apparatus has 2 inspection channels, and the 2 inspection channels can detect different optical signals (the first to-be-inspected light and the second to-be-inspected light) at the same time, respectively. Therefore, the semiconductor detection device can detect at least 2 different defects which need optical signals with specific polarization directions to be detected in 1 scanning detection by emitting incident light for the same 1 time. Furthermore, the semiconductor detection device improves the efficiency of defect detection and improves the semiconductor detection device while maintaining high sensitivity for defect detection.
Drawings
Fig. 1 to 3 are schematic structural views of a semiconductor inspection apparatus according to an embodiment of the present invention;
FIG. 4 is an SEM image of one type of defect;
FIG. 5 is a comparison of optical signal detection results for the defects of FIG. 4;
FIG. 6 is an SEM image of another type of defect;
FIG. 7 is a comparison of optical signal detection results for the defects of FIG. 6;
FIG. 8 is a schematic structural diagram of a semiconductor inspection apparatus according to another embodiment of the present invention;
fig. 9 is a flowchart illustrating a detection method according to an embodiment of the invention.
Detailed Description
As described in the background, the existing optical detection devices still need to be improved.
Specifically, in the bright field detection apparatus of an embodiment, the defect of the wafer to be detected is monitored by emitting unpolarized light to the wafer to be detected, or emitting linearly polarized light or circularly polarized light having two polarization components perpendicular to each other to the wafer to be detected, and detecting an optical signal of reflected light formed by the incident light being reflected by the wafer to be detected. In order to detect the optical signal of the reflected light, a 1-channel detection channel (detector channel) is disposed in the optical path of the reflected light to receive the reflected light.
However, since there may be many different types of defects in the wafer to be detected, some types of defects need to be detected by a special optical signal, for example, some types of defects need to be detected by an optical signal with a specific wavelength, other types of defects need to be detected by an optical signal with a specific polarization direction, and other types of defects need to be detected by an optical signal with both a specific wavelength and a specific polarization direction. Therefore, the bright field detection device in the above embodiment has a limitation on the types of defects that can be detected, that is, the sensitivity of the bright field detection device is poor.
In order to improve the sensitivity of the bright field detection device, in the bright field detection device of another embodiment, the incident light emitted to the wafer to be detected is processed by arranging a filtering unit or a polarizing unit in the optical path of the incident light, so that the bright field detection device can detect a wider variety of defects in the wafer to be detected, and the sensitivity of the bright field detection device is improved.
However, in the bright field inspection apparatus, since only one type of optical signal can be detected in each detection of the defect of the wafer to be inspected, when a plurality of types of defects which can be detected only by a special optical signal need to be detected, the wafer to be inspected must be scanned and inspected a plurality of times according to the number of types of the defects, and thus, the defect detection time of the wafer to be inspected is too long, and the detection efficiency is low. Specifically, the first defect and the second defect of the wafer to be tested are detected by using an optical signal with a first polarization direction as an example, and the second defect is detected by using an optical signal with a second polarization direction as an example. When the wafer to be detected needs to be detected for the first defect and the second defect, in the bright field detection device, the wafer to be detected needs to be scanned and detected twice. Therefore, the time for detecting the wafer to be detected is multiplied, which causes too long detection time and low detection efficiency.
In order to solve the technical problem, embodiments of the present invention provide a semiconductor inspection apparatus and an inspection method. Wherein, semiconductor detection device includes: the bearing device is used for bearing the wafer to be tested; an incident light system for emitting an initial incident light; the first light splitting unit is used for converting the initial incident light into incident light which is vertically incident to the surface of the wafer to be detected and is used for passing through reflected light formed by reflecting the incident light through the wafer to be detected; the polarization splitting unit is used for polarization splitting the reflected light into first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light; the first detection unit is used for acquiring first detection information to be measured according to the first detection information to be measured; and the second detection unit is used for acquiring second light detection information to be detected according to the second light to be detected. The semiconductor detection device is an improvement of the existing semiconductor detection device, and a detection method adopting the semiconductor detection device is also improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to 3 are schematic structural views of a semiconductor inspection apparatus according to an embodiment of the invention.
First, referring to fig. 1, the semiconductor inspection apparatus includes:
a carrying device 100 for carrying a wafer 101 to be tested;
an incident light system 200 for emitting an initial incident light 201;
a first light splitting unit 300, configured to turn the initial incident light 201 into incident light 301 that is vertically incident on the surface of the wafer 101 to be tested, and to pass through reflected light 302 that is formed by the incident light 301 being reflected by the wafer to be tested;
a polarization splitting unit 400, configured to polarization-split the reflected light 302 into a first to-be-detected light 401 and a second to-be-detected light 402, where a polarization direction of the first to-be-detected light 401 is different from a polarization direction of the second to-be-detected light 402;
a first detection unit 510, configured to obtain first to-be-detected light detection information according to the first to-be-detected light 401;
the second detection unit 520 is configured to obtain second light detection information to be detected according to the second light to be detected 402.
On the one hand, since the reflected light 302 can be polarized and split in the optical path of the reflected light 302 by the polarization splitting unit 400, the first light to be measured 401 and the second light to be measured 402 are formed, and thus, by the same emission of the incident light 301 for 1 time, in 1-time scanning detection, optical signals of 2 light to be measured having different polarization states can be simultaneously formed. On the other hand, since the semiconductor inspection apparatus includes the first inspection unit 510 and the second inspection unit 520 at the same time, the semiconductor inspection apparatus has 2 inspection channels, and the 2 inspection channels can detect different optical signals (the first to-be-inspected light 401 and the second to-be-inspected light 402) at the same time, respectively. Thus, the semiconductor inspection device can inspect at least 2 different defects that require optical signals of a specific polarization direction to be detected in 1 scan inspection by emitting the incident light 301 for the same 1 time. Furthermore, the semiconductor detection device improves the efficiency of defect detection and improves the semiconductor detection device while maintaining high sensitivity for defect detection.
The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1 and 2, the incident light system 200 includes: a light source 210 for emitting a first incident light 202; a filtering unit 220, configured to filter the first incident light 202, so that an optical signal with a wavelength in a third preset wavelength range in the first incident light 202 passes through the filtering unit 220, and the initial incident light 201 is formed.
Specifically, the light source 210 emits a first incident light 202, and then the first incident light 202 is filtered by the filtering unit 220 to form an initial incident light 201 with a wavelength within the third predetermined wavelength range.
Thus, the semiconductor inspection apparatus can detect: a defect type that requires an optical signal having a wavelength within a third predetermined wavelength range to be detected.
In this embodiment, the filtering unit 220 includes a filter.
In the present embodiment, the first incident light 202 emitted by the light source 210 is unpolarized light or linearly polarized or circularly polarized light having two mutually perpendicular polarization components.
In this embodiment, after the incident light system 200 emits the initial incident light 201, the initial incident light 201 is converted into the incident light 301 vertically incident on the surface of the wafer 101 to be measured by the first light splitting unit 300. The incident light 201 is reflected by the wafer 101 to be measured to form a reflected light 302, and is reflected toward the first light splitting unit 300. Then, the first light splitting unit 300 receives and passes the reflected light 302.
It should be noted that, since the incident light 301 is incident perpendicularly to the surface of the wafer 101 to be measured, the incident light 301 and the reflected light 302 are substantially merged with the normal line perpendicular to the surface of the wafer 101 to be measured by 3 lines on the basis of the opposite propagation directions. For convenience of illustration and understanding of the propagation directions of the incident light 301 and the reflected light 302 in fig. 1, the incident light 301 and the reflected light 302 are respectively represented schematically by parallel line segments with arrows.
In this embodiment, the first light splitting unit 300 includes a light splitting prism.
Next, the reflected light 302 passing through the first light splitting unit 300 is polarized and split into a first to-be-measured light 401 and a second to-be-measured light 402 by the polarization light splitting unit 400, and the polarization direction of the first to-be-measured light 401 and the polarization direction of the second to-be-measured light 402 are different. Thus, the polarization splitting unit 400 can split and control the polarization of the reflected light 302 to form 2-way blocked polarized light for simultaneously detecting at least 2 different defects that require a specific polarization direction to be detected.
Specifically, please refer to fig. 1, in the present embodiment, the polarization splitting unit 400 is configured to polarizedly split the reflected light 302 into a first to-be-detected light 401 and a second to-be-detected light 402, a polarization direction of the first to-be-detected light 401 is parallel to the surface of the to-be-detected wafer 101, a polarization direction of the second to-be-detected light 402 is parallel to the surface of the to-be-detected wafer 101, and the polarization directions of the first to-be-detected light 401 and the second to-be-detected light 402 are perpendicular to each other.
Specifically, in the present embodiment, on a plane parallel to the surface of the wafer 101 to be measured, the first light to be measured 401 is an optical signal with horizontal polarization (as shown in the direction H in fig. 1), and the second light to be measured 402 is an optical signal with vertical polarization (as shown in the direction V in fig. 1).
In other embodiments, the first light to be measured may also be a vertically polarized optical signal, and the second light to be measured is a horizontally polarized optical signal.
Furthermore, the first to-be-measured light 401 and the second to-be-measured light 402 have different propagation directions by polarization splitting of the polarization splitting unit 400.
In this embodiment, the polarization splitting unit 400 includes a polarization splitting prism.
Next, by the first detection unit 510, first detection information to be detected is obtained according to the first detection light 401, and by the second detection unit 520, second detection information to be detected is obtained according to the second detection light 402.
In this embodiment, the first detecting unit 510 includes a first imaging sensor (not shown).
The second detection unit 520 includes a second imaging sensor (not shown).
In the linear optical field, the signal intensity of the optical signal polarized perpendicular to each other in the incident light and the reflected light is much lower than the signal intensity of the optical signal polarized parallel to each other in the incident light and the reflected light, so the effect of the method of detecting a defect by polarization separation of the reflected light 302 in the present embodiment can be equivalent to the effect of the method of detecting a defect by polarization separation of the incident light in the bright field detection device in the other embodiment.
Specifically, please refer to fig. 4 to 7 in combination, wherein fig. 4 is an image of one type of SEM defect, fig. 5 is a comparison diagram of the optical signal detection results of the defects in fig. 4, fig. 6 is an image of another type of SEM defect, and fig. 7 is a comparison diagram of the optical signal detection results of the defects in fig. 6.
For the defect 111 in the area a of fig. 4, the optical signal H in which the incident light is horizontally polarized and the reflected light is not polarization-controlled is used, respectivelyin/Nout(optical signal to be measured in the detection method employed by the bright field detection apparatus of the other embodiment described above), and the optical signal N in which the reflected light is horizontally polarized and the polarization of the incident light is not controlledin/Hout(first to-be-measured light 401 in this embodiment), an optical signal V in which incident light is vertically polarized and reflected light is not subjected to polarization controlin/Nout(optical signal to be measured in the detection method employed by the bright field detection apparatus of the other embodiment described above), and the optical signal N in which the reflected light is vertically polarized and the incident light is not subjected to polarization controlin/Vout(second light to be measured 402 in the present embodiment), an optical signal H in which incident light is horizontally polarized and reflected light is vertically polarizedin/Vout(one of the mutually parallel polarized optical signals), and an optical signal V in which incident light is vertically polarized and reflected light is horizontally polarizedin/Hout(the other of the mutually parallel polarized optical signals), defect detection was performed.
As shown in FIG. 5, an optical signal H is usedin/NoutAnd an optical signal Nin/HoutHas high signal-to-noise ratio and signal intensity, and adopts optical signal Hin/NoutAnd optical informationNumber Nin/HoutThe detection results of (2) are close to each other, and the defect 111 can be clearly reflected. Compared with using optical signals Hin/NoutAnd an optical signal Nin/HoutUsing optical signals Vin/NoutAnd an optical signal Nin/VoutThe detection result of (2) is close, but the signal-to-noise ratio and the signal intensity are low, and the defect 111 cannot be clearly reflected, i.e. the defect type in fig. 4 is not suitable for detection. While using the optical signal Hin/VoutAnd an optical signal Vin/HoutThe signal-to-noise ratio and the signal intensity in the detection result of (2) are very low, and the defect 111 cannot be reflected at all.
Similarly, for the defect 112 in the region B of FIG. 6, the optical signals H are also used respectivelyin/NoutOptical signal Nin/HoutOptical signal Vin/NoutOptical signal Nin/VoutOptical signal Hin/VoutAnd an optical signal Vin/HoutDefect detection was performed.
As shown in FIG. 7, an optical signal V is usedin/NoutAnd an optical signal Nin/VoutHas high signal-to-noise ratio and signal intensity, and adopts an optical signal Vin/NoutAnd an optical signal Nin/VoutThe detection results of (2) are close to each other, and the defect 112 can be clearly reflected. Compared with using optical signals Vin/NoutAnd an optical signal Nin/VoutUsing optical signals Hin/NoutAnd an optical signal Nin/HoutBut the signal-to-noise ratio and signal strength are low, and the defect 112 cannot be clearly reflected, i.e., is not suitable for detecting the defect type in fig. 5. While using the optical signal Hin/VoutAnd an optical signal Vin/HoutThe signal-to-noise ratio and the signal intensity of the detection result are also very low, and the defect 112 cannot be reflected at all.
It is understood from this that the sensitivity of the defect detection of the semiconductor inspection apparatus of the present embodiment can be equivalent to the sensitivity of the defect detection of the bright field inspection apparatus of the other embodiment described above.
With continuing reference to fig. 1 and 3, the semiconductor inspection apparatus further includes: the control system 600 is configured to obtain a first defect image according to the first to-be-detected light detection information, obtain first defect information according to the first defect image, obtain a second defect image according to the second to-be-detected light detection information, and obtain second defect information according to the second defect image.
Specifically, in this embodiment, the control system 600 includes an image operation unit 610, configured to obtain a first defect image according to the first to-be-detected light detection information, and obtain a second defect image according to the second to-be-detected light detection information. Thus, the detected defects of the wafer 101 to be tested are formed into a visual image.
In this embodiment, the control system 600 further includes a defect determining unit 620: for obtaining first defect information from the first defect image and for obtaining second defect information from the second defect image. Thus, the type of the detected defect and the specific data reflecting the defect are obtained.
In this embodiment, the semiconductor inspection apparatus further includes: the focusing unit 700 (shown in fig. 1) is configured to focus the incident light 301 on the surface of the wafer 101 to be tested or in the wafer 101 to be tested.
The focusing unit 700 includes a focusing lens and the like.
In another embodiment, the semiconductor detection device filters the first light to be detected and the second light to be detected instead of filtering the incident light.
Specifically, in another embodiment, as shown in fig. 8, the semiconductor inspection apparatus includes an incident light system 230, where the incident light system 230 includes: the optical system includes a light source (not shown) for emitting an initial incident light 211, wherein the initial incident light 211 includes more than 2 optical signals in different preset wavelength ranges. After emitting the initial incident light 211, the initial incident light 211 is converted into an incident light 311 vertically incident on the surface of the wafer 101 to be tested by the first light splitting unit 300, and the incident light 311 is reflected by the wafer 101 to be tested to form a reflected light 312. Then, the first light splitting unit 300 receives and passes the reflected light 312.
Referring to fig. 8 again, the reflected light 312 passing through the first light splitting unit 300 is polarized and split into a first light to be detected 411 and a second light to be detected 412 by the polarization light splitting unit 400. The first to-be-detected light 411 in the present embodiment is different from the first to-be-detected light 401 in the embodiment shown in fig. 1 to 3 in that since the semiconductor detection device in the present embodiment does not filter the incident light 211, an optical signal having a wavelength in at least 2 or more different preset wavelength ranges is contained in the first to-be-detected light 411. Similarly, the second light to be measured 412 in the present embodiment is different from the second light to be measured 402 in the embodiment shown in fig. 1 to 3 in that the second light to be measured 412 includes optical signals with wavelengths in at least 2 different preset wavelength ranges.
With continued reference to fig. 8, the semiconductor inspection apparatus further includes: a first filter 410, configured to filter the first to-be-detected light 411, so that an optical signal with a wavelength in a first preset wavelength range in the first to-be-detected light 411 passes through the first filter, and transmit the filtered first to-be-detected light 413 to the first detection unit 510; the second filter 420 is configured to filter the second to-be-detected light 412, so that an optical signal of the second to-be-detected light 412 with a wavelength within a second preset wavelength range passes through the second filter 420, and the filtered second to-be-detected light 414 is transmitted to the second detection unit 520.
Since the semiconductor inspection apparatus further includes the first filter 410 for filtering the first light to be inspected 411 and the second filter 420 for filtering the second light to be inspected 412, at least 2 kinds of defects, which require both a specific wavelength and a specific polarization direction, to be detected, can be detected by the semiconductor inspection apparatus. Therefore, the semiconductor detection device improves the efficiency of defect detection and improves the sensitivity.
In other embodiments, the semiconductor inspection apparatus may include the first filter or the second filter such that 1 of the 2 inspection channels can detect defects that require optical signals of a particular wavelength and a particular polarization direction to be detected at the same time, thereby enabling the semiconductor inspection apparatus to better balance defect detection efficiency and manufacturing cost.
In this embodiment, the carrying device 100 includes: a susceptor (not shown) for supporting the wafer 101 to be tested; and a fixing device (not shown) disposed on the susceptor and configured to fix the wafer 101 to be tested on the susceptor. Specifically, the fixing device is a vacuum chuck or a buckle fixed on the edge of the bearing plate.
Accordingly, an embodiment of the present invention further provides a testing method using the semiconductor testing apparatus, and with reference to fig. 9, the method includes:
step S1, providing a wafer to be tested;
step S2, emitting initial incident light;
step S3, the initial incident light is turned into the incident light which is vertically incident on the surface of the wafer to be measured, and the incident light is reflected by the wafer to be measured to form reflected light;
step S4, dividing the reflected light into a first light to be measured and a second light to be measured, where the polarization direction of the first light to be measured is different from the polarization direction of the second light to be measured;
step S5, acquiring first to-be-measured light detection information according to the first to-be-measured light;
and step S6, acquiring second light detection information to be detected according to the second light to be detected.
The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1 and fig. 2, a wafer 101 to be tested is provided; then, the initial incident light 201 is emitted.
In this embodiment, the method for forming the initial incident light 201 includes: emitting a first incident light 202; filtering the first incident light 202 to pass an optical signal with a wavelength within the third predetermined wavelength range in the first incident light 202 to form the initial incident light 201.
In the present embodiment, the first incident light 202 emitted by the light source 210 is unpolarized light or linearly polarized or circularly polarized light having two mutually perpendicular polarization components.
In another embodiment, please refer to fig. 8, an initial incident light 211 is emitted, wherein the initial incident light 211 includes more than 2 optical signals within different predetermined wavelength ranges.
Next, with continued reference to fig. 1, the initial incident light 201 is turned into an incident light 301 that is vertically incident on the surface of the wafer 101 to be tested, and the incident light 301 is reflected by the wafer 101 to be tested to form a reflected light 302.
In this embodiment, the detection method further includes: focusing the incident light 301 on the surface of the wafer 101 to be tested or in the wafer 101 to be tested.
In another embodiment, please refer to fig. 8 in combination, the initial incident light 211 is converted into an incident light 311 vertically incident on the surface of the wafer 101 to be tested, and the incident light 311 is reflected by the wafer 101 to be tested to form a reflected light 312.
With reference to fig. 1, the reflected light 302 is polarization-split into a first to-be-detected light 401 and a second to-be-detected light 402, and the polarization direction of the first to-be-detected light 401 is different from the polarization direction of the second to-be-detected light 402.
Specifically, in this embodiment, the polarization direction of the first to-be-measured light 401 is parallel to the surface of the to-be-measured wafer 101, the polarization direction of the second to-be-measured light 402 is parallel to the surface of the to-be-measured wafer 101, and the polarization direction of the first to-be-measured light 401 is perpendicular to the polarization direction of the second to-be-measured light 402.
Specifically, in the present embodiment, on a plane parallel to the surface of the wafer 101 to be measured, the first light to be measured 401 is an optical signal with horizontal polarization (as shown in the direction H in fig. 1), and the second light to be measured 402 is an optical signal with vertical polarization (as shown in the direction V in fig. 1).
In other embodiments, the first light to be measured may also be a vertically polarized optical signal, and the second light to be measured is a horizontally polarized optical signal.
Furthermore, the first to-be-measured light 401 and the second to-be-measured light 402 also have different propagation directions.
Referring to fig. 1, first detection information of the light to be detected is obtained according to the first detection information 401, and second detection information of the light to be detected is obtained according to the second detection information 402.
In this embodiment, the detection method further includes: acquiring a first defect image according to the first to-be-detected light detection information; and acquiring first defect information according to the first defect image.
In this embodiment, the detection method further includes: acquiring a second defect image according to the second light detection information to be detected; and acquiring second defect information according to the second defect image.
In another embodiment, please continue to refer to fig. 8, the reflected light 312 is polarization-divided into the first to-be-detected light 411 and the second to-be-detected light 412. The polarization direction and the propagation direction of the first light to be measured 411 and the first light to be measured 401 (shown in fig. 1) are the same, and the polarization direction and the propagation direction of the second light to be measured 412 and the second light to be measured 402 (shown in fig. 1) are the same, which is not described herein again. Then, the detection method further comprises: filtering the first to-be-detected light 411 to pass an optical signal with a wavelength in a first preset wavelength range in the first to-be-detected light 411; filtering the second light to be detected 412 to pass an optical signal of the second light to be detected 412, wherein the wavelength of the optical signal is within a second preset wavelength range; acquiring first to-be-detected light detection information according to the filtered first to-be-detected light 413, and acquiring second to-be-detected light detection information according to the filtered second to-be-detected light 414; acquiring a first defect image according to the first to-be-detected light detection information; acquiring first defect information according to the first defect image; acquiring a second defect image according to the second light detection information to be detected; and acquiring second defect information according to the second defect image.
In another embodiment, specifically, the first preset wavelength range and the second preset wavelength range are different.
In other embodiments, the detection method comprises: the first to-be-detected light 411 is filtered to pass an optical signal with a wavelength within a first preset wavelength range in the first to-be-detected light 411. Or filtering the second light to be measured 412 to pass an optical signal of the second light to be measured 412 with a wavelength within a second preset wavelength range.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (20)
1. A semiconductor inspection apparatus, comprising:
the bearing device is used for bearing the wafer to be tested;
an incident light system for emitting an initial incident light;
the first light splitting unit is used for converting the initial incident light into incident light which is vertically incident to the surface of the wafer to be detected and is used for passing through reflected light formed by reflecting the incident light through the wafer to be detected;
the polarization splitting unit is used for polarization splitting the reflected light into first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light;
the first detection unit is used for acquiring first detection information to be measured according to the first detection information to be measured;
and the second detection unit is used for acquiring second light detection information to be detected according to the second light to be detected.
2. The semiconductor inspection device according to claim 1, wherein the polarization beam splitting unit is configured to polarize and split the reflected light into a first to-be-inspected light and a second to-be-inspected light, a polarization direction of the first to-be-inspected light is parallel to a surface of the wafer to be inspected, a polarization direction of the second to-be-inspected light is parallel to the surface of the wafer to be inspected, and the polarization directions of the first to-be-inspected light and the second to-be-inspected light are perpendicular to each other.
3. The semiconductor inspection device according to claim 1, wherein the polarization beam splitting unit is configured to polarizedly split the reflected light into a first light to be inspected and a second light to be inspected, and propagation directions of the first light to be inspected and the second light to be inspected are different.
4. The semiconductor inspection device of claim 1, wherein the first light splitting unit comprises a light splitting prism.
5. The semiconductor inspection device according to claim 1, wherein the polarization splitting unit includes a polarization splitting prism.
6. The semiconductor inspection device of claim 1, further comprising: the first filter is used for filtering the first to-be-detected light, so that an optical signal with the wavelength within a first preset wavelength range in the first to-be-detected light passes through the first filter, and the first to-be-detected light after filtering is transmitted to the first detection unit.
7. The semiconductor inspection device of claim 6, further comprising: and the second optical filter is used for filtering the second light to be detected, so that an optical signal with the wavelength within a second preset wavelength range in the second light to be detected passes through the second optical filter, and the filtered second light to be detected is transmitted to the second detection unit.
8. The semiconductor inspection device of claim 7, wherein the first predetermined wavelength range and the second predetermined wavelength range are different.
9. The semiconductor inspection device of claim 1, wherein the first inspection unit comprises a first imaging sensor and the second inspection unit comprises a second imaging sensor.
10. The semiconductor inspection device according to claim 1 or 9, further comprising: and the control system is used for acquiring a first defect image according to the first to-be-detected light detection information, acquiring first defect information according to the first defect image, acquiring a second defect image according to the second to-be-detected light detection information, and acquiring second defect information according to the second defect image.
11. The semiconductor inspection device of claim 1, wherein the incident light system comprises: a light source for emitting a first incident light; and the filtering unit is used for filtering the first incident light, so that an optical signal with the wavelength within a third preset wavelength range in the first incident light passes through the filtering unit to form the initial incident light.
12. The semiconductor inspection device of claim 1, further comprising: and the focusing unit is used for focusing incident light on the surface of the wafer to be detected or in the wafer to be detected.
13. A testing method using the semiconductor testing device according to any one of claims 1 to 12, comprising:
providing a wafer to be tested;
emitting initial incident light;
the initial incident light is turned into the incident light which is vertically incident to the surface of the wafer to be detected, and the incident light is reflected by the wafer to be detected to form reflected light;
the reflected light is subjected to polarization splitting to form first to-be-detected light and second to-be-detected light, and the polarization direction of the first to-be-detected light is different from that of the second to-be-detected light;
acquiring first to-be-detected light detection information according to the first to-be-detected light;
and acquiring second light detection information to be detected according to the second light to be detected.
14. The inspection method of claim 13, wherein the polarization direction of the first light to be measured is parallel to the surface of the wafer to be inspected, the polarization direction of the second light to be measured is parallel to the surface of the wafer to be inspected, and the polarization directions of the first light to be measured and the second light to be measured are perpendicular to each other.
15. The detection method according to claim 13, wherein the first light to be measured and the second light to be measured have different propagation directions.
16. The detection method of claim 13, further comprising: before first light to be measured detection information is obtained according to the first light to be measured, filtering the first light to be measured so as to pass through an optical signal of the first light to be measured, wherein the wavelength of the optical signal is within a first preset wavelength range.
17. The detection method of claim 16, further comprising: and filtering the second light to be detected before obtaining second light detection information according to the second light to be detected so as to pass through an optical signal of the second light to be detected, wherein the wavelength of the optical signal is within a second preset wavelength range.
18. The detection method of claim 17, wherein the first predetermined wavelength range and the second predetermined wavelength range are different.
19. The detection method according to claim 13 or 18, further comprising: acquiring a first defect image according to the first to-be-detected light detection information; acquiring first defect information according to the first defect image; acquiring a second defect image according to the second light detection information to be detected; the second defect image acquires second defect information.
20. The detection method of claim 13, wherein forming the initial incident light comprises: emitting a first incident light; filtering the first incident light to pass an optical signal with a wavelength within a third preset wavelength range in the first incident light to form the initial incident light.
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| CN202011462238.8A CN112229857A (en) | 2020-12-14 | 2020-12-14 | Semiconductor detection device and detection method |
| PCT/CN2020/137912 WO2022126677A1 (en) | 2020-12-14 | 2020-12-21 | Semiconductor inspection device and inspection method |
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