CN107230648A - A kind of substrate defects detection means and detection method - Google Patents
A kind of substrate defects detection means and detection method Download PDFInfo
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- CN107230648A CN107230648A CN201610178525.3A CN201610178525A CN107230648A CN 107230648 A CN107230648 A CN 107230648A CN 201610178525 A CN201610178525 A CN 201610178525A CN 107230648 A CN107230648 A CN 107230648A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The present invention relates to a kind of substrate defects detection means and detection method, the device includes：There is provided lighting radiation light for light source；Plummer, for carrying substrate to be measured, and drives basement movement to be measured；Imaging unit, lighting radiation light is converged in substrate to be measured, and collects the light reflected through substrate to be measured；Polychromatic light separative element, several independent wave bands are separated into by the reflected light that imaging unit is collected；Some probe units, the image information for one-to-one each wave band of collection；And processor, for carrying out analysis calculating to the image information collected, obtain defectoscopy result.In the present invention, lighting radiation light is separated into by several independent wave bands using polychromatic light separative element, and gather the image information of each wave band respectively using some probe units, user can be according to the operational characteristic of substrate to be measured, wavelength switching need not be carried out, the contrast image selection of optimal wave band illumination can be just carried out in real time, so as to improve the Technological adaptability of defects detection.
Description
Technical field
The present invention relates to chip encapsulation technology field, more particularly to a kind of substrate defects detection means and detection side
Method.
Background technology
Modern advanced chip encapsulation technology mainly uses the techniques such as RDL, Bump, TSV, bonding, is based on
These fundamental technologies, have currently had been developed that Flip-chip, WLCSP, Interposer, 3D-Stack etc.
Different Advanced Packaging form of all kinds.
The trickle defect of per pass technique is likely to cause the performance of whole chip not up to standard during Advanced Packaging
Even scrap, therefore all must strictly be controlled in the qualification of its parameter, particular exam after every one of technique
Hold comprising line size, thicknesses of layers, alignment level etc..In addition need to also be by optical microscope system
Various visual defects therein are directly checked, investigation and effectively control are carried out the reason for so as to defect.These
Defect includes the polytypes such as foreign particle thing, scratch, pattern dislocation.
For defect inspection, traditional method is to carry out artificial visual inspection to substrate by microscope.Benefit
In the fast development of the technology such as computer in recent years and graphics process, start to introduce automation optical detection system
(AOI, Automatic Optical Inspection) is united instead of artificial visual inspection.Compared with Manual Visual Inspection,
AOI equipment ensure that the uniformity of examination criteria, and defect can be classified, and can also be technique work
Cheng Shi provides the information of tracking and prevention potential problems.
But, the sensitivity of the defect of different process characteristic to illumination wavelengths is different, if using specific ripple
Long illumination, the defects detection poor to sensitivity has difficulties, and as previously described, wafer technique is a variety of
It is various, thus be badly in need of find it is a kind of can compatible polytechnic defects detection device and method.Existing
Known technology in, although propose using automation Systems for optical inspection device, but not to above-mentioned
Problem is illustrated and proposed solution.
The content of the invention
The present invention provides a kind of substrate defects detection means and detection method, of the prior art above-mentioned to solve
Technical problem.
In order to solve the above technical problems, the present invention provides a kind of substrate defects detection means, including：
There is provided lighting radiation light for light source；
Plummer, for carrying substrate to be measured, and drives the basement movement to be measured；
Imaging unit, the lighting radiation light is converged in the substrate to be measured, and is collected through described to be measured
The light of substrate reflection；
Polychromatic light separative element, the reflected light that the imaging unit is collected is separated into several independent wave bands；
Some probe units, the image information for one-to-one each wave band of collection；And
Processor, for carrying out analysis calculating to the image information collected, obtains defectoscopy result.
It is preferred that the wave-length coverage of the light source covers ultraviolet, visible ray and infrared band.
It is preferred that the light source uses LED/light source, xenon lamp or Halogen lamp LED.
It is preferred that the imaging unit includes collimation lens, attenuator, beam splitter and imaging thing successively
Mirror, the lighting radiation light that the light source is sent is incident to the light splitting member after the collimation lens and attenuator
Part light splitting, and converged to by the image-forming objective lens in the substrate to be measured, through the substrate reflection to be measured
Reflected light is connect after the image-forming objective lens, beam splitter and polychromatic light separative element by the probe unit successively
Receive.
It is preferred that the beam splitter is right angle Amici prism or semi-transparent semi-reflecting lens.
It is preferred that the probe unit is arranged at the focal plane conjugate position of the image-forming objective lens.
It is preferred that the polychromatic light separative element uses beam splitting dichroic mirror group or Amici prism.
It is preferred that the probe unit includes lens and planar array detector.
It is preferred that the planar array detector is CCD or CMOS.
Present invention also offers a kind of substrate defects detection method, comprise the following steps：
S1：Substrate to be measured is uploaded to plummer；
S2：Definition detection prescription, includes the information and the reference information of defect of substrate to be measured；
S3：Perform alignment focusing；
S4：Perform detection, the lighting radiation light that will be reflected using polychromatic light separative element through the substrate to be measured
Several independent wave bands are separated into, and are believed by the image of the one-to-one each wave band of collection of some probe units
Breath, according to the information of the substrate to be measured, the reference information of defect and image information, obtains each wave band
The defective data detected；
S5：The defective data that each wave band is detected is compared, and is chosen most clever to each defect type
The defective data of quick wave band is used as output after the final defective data of correspondence defect type.
It is preferred that the execution alignment focusing includes：The coordinate system of the substrate to be measured is set up, makes described treat
Survey substrate and be in optimal imaging position.
It is preferred that the defective data includes：The quantity of defect in substrate to be measured, position, size and correspondingly
Defect type information.
Present invention also offers another substrate defects detection means, including：
There is provided lighting radiation light for light source；
Plummer, for carrying substrate to be measured, and drives the basement movement to be measured；
Imaging unit, the lighting radiation light is converged in the substrate to be measured, and is collected through described to be measured
The light of substrate reflection；
Polychromatic light separative element, the reflected light that the imaging unit is collected is separated into several independent wave bands；
Some probe units, the image information for one-to-one each wave band of collection；And
Processor, according to the information of the substrate to be measured, the reference information of defect and described image information, is obtained
The defective data detected to each wave band, then the defective data that each wave band is detected are compared,
Choose to the defective data of the most sensitive wave band of each defect type as the final number of defects for corresponding to defect type
According to rear output.
Compared with prior art, the present invention is provided substrate defects detection means and detection method, the device bag
Include：There is provided lighting radiation light for light source；Plummer, for carrying substrate to be measured, and drives the base to be measured
Move at bottom；Imaging unit, the lighting radiation light is converged in the substrate to be measured, and is collected through described
The light of substrate reflection to be measured；Polychromatic light separative element, if the reflected light that the imaging unit is collected is separated into
Dry independent wave band；Some probe units, the image information for one-to-one each wave band of collection；With
And processor, for carrying out analysis calculating to the image information collected, obtain defectoscopy result.This hair
In bright, lighting radiation light is separated into by several independent wave bands using polychromatic light separative element, and if utilizing
Dry probe unit gathers the image information of each wave band respectively, user can according to the operational characteristic of substrate to be measured,
Wavelength switching need not be carried out, it is possible to the contrast image selection of optimal wave band illumination is carried out in real time, so as to carry
The high Technological adaptability of defects detection.
Brief description of the drawings
Fig. 1 is the structural representation of the substrate defects detection means of the embodiment of the invention；
Fig. 2 is the light-dividing principle figure of beam splitting dichroic mirror group in the embodiment of the invention；
Fig. 3 is the light-dividing principle figure of Amici prism in the embodiment of the invention；
Fig. 4 is the structural representation of probe unit in the embodiment of the invention；
Fig. 5 a~5d is respectively gray level image of the defect 1 in blue and green light, feux rouges and gold-tinted；
Fig. 6 a~6d is respectively gray level image of the defect 2 in blue and green light, feux rouges and gold-tinted；
Fig. 7 is the contrast results schematic diagram of defect 1 and defect 2 under different illumination wavelengths；
Fig. 8 is the flow chart of the substrate defects detection method of the embodiment of the invention.
In figure：10- light sources, 101- lighting radiation light；
20- plummers；
111- collimation lenses, 112- attenuators, 113- beam splitters, 114- image-forming objective lens, 115- are treated
Survey substrate；
30- polychromatic lights separative element, 40- beam splitting dichroic mirrors group, the beam splitting dichroic mirrors of 401a- first,
The beam splitting dichroic mirrors of 401b- second, the beam splitting dichroic mirrors of 401c- the 3rd, 50- Amici prisms；
60th, 60a, 60b, 60c- probe unit, 601- lens, 602- planar array detectors；
70- processors.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is right below in conjunction with the accompanying drawings
The embodiment of the present invention is described in detail.It should be noted that, accompanying drawing of the present invention is using simplification
Form and use non-accurately ratio, only to it is convenient, lucidly aid in illustrating the mesh of the embodiment of the present invention
's.
The substrate defects detection means that the present invention is provided, as shown in figure 1, including：
There is provided lighting radiation light 101 for light source 10；
Plummer 20, for carrying substrate 115 to be measured, and drives the substrate to be measured 115 to move, this implementation
In example, the substrate 115 to be measured is silicon chip；
Imaging unit, the lighting radiation light 101 is converged in the substrate to be measured 115, and collect warp
The light that the substrate to be measured 115 reflects；
Polychromatic light separative element 30, the reflected light that the imaging unit is collected is separated into several independent ripples
Section；
Some probe units 60, the image information for one-to-one each wave band of collection；And
Processor 70, for carrying out analysis calculating to the image information collected, obtains defectoscopy result.
In the present invention, lighting radiation light 101 is separated into by several using polychromatic light separative element 30 independent
Wave band, and the image information of each wave band is gathered using some probe units 60 respectively, user can be according to be measured
The operational characteristic of substrate 115, without carrying out wavelength switching, you can realize the real-time detection of different defects.
It is preferred that the light source 10 selects broadband light source, its wave-length coverage covers ultraviolet, visible ray and red
Wave section, specifically, the light source 10 can select LED/light source, xenon lamp or Halogen lamp LED, to adapt to difference
The silicon chip of technique.
It is preferred that please continue to refer to Fig. 1, the imaging unit include successively collimation lens 111, attenuator 112,
Beam splitter 113 and image-forming objective lens 114, the lighting radiation light 101 that the light source 10 is sent is through the standard
Straight lens 111 are collimated, and then through the attenuator 112, it is possible to achieve the regulation of overall light intensity, are then entered
It is incident upon the beam splitter 113 and carries out light splitting, it is preferred that the beam splitter 113 is right angle Amici prism
Or semi-transparent semi-reflecting lens, light beam after light splitting converges to described treat by the image-forming objective lens 114 with certain angle
Survey in substrate 115, the reflected light reflected through the substrate 115 to be measured successively through the image-forming objective lens 114, point
Received after optical element 113 and polychromatic light separative element 30 by the probe unit 60, described in the present embodiment
Image-forming objective lens 114 use the object lens of long working distance.
It is preferred that the probe unit 60 is arranged at the focal plane conjugate position of the image-forming objective lens 114, really
Protect probe unit 60 can obtain clearly as.
It is preferred that asking emphasis to refer to Fig. 2, the polychromatic light separative element 30 uses beam splitting dichroic mirror group 40,
In the present embodiment, beam splitting dichroic mirror group 40 includes the first beam splitting dichroic mirror 401a, the second dichroic beam splitting
Mirror 401b and the 3rd beam splitting dichroic mirror 401c, the wave-length coverage of lighting radiation light 101 is 500nm~900nm,
By the first beam splitting dichroic mirror 401a, reflected waveband is 500nm~578nm；Remaining be transmitted to the two or two to
Color beam splitter 401b, reflected waveband is 613nm~664nm；Remaining is transmitted to the 3rd beam splitting dichroic mirror 401c,
Reflected waveband is 694nm~732nm, and transmission wave band is 790nm~900nm, now, by four different ripples
Section correspondence is detected by four probe units 60, obtains the image information of defect under different wave length.
It is preferred that asking emphasis to refer to Fig. 3, the polychromatic light separative element 30 uses Amici prism 50, illumination
The wave-length coverage of radiant light 101 includes different wave band λ 1, λ 2, λ 3, will not after Amici prism 50
With wave band separation, and three probe units 60 are incident to respectively, obtain the image information of defect under different wave length.
It is preferred that asking emphasis to refer to Fig. 4, the probe unit 60 includes lens 601 and planar array detector 602,
Specifically, the planar array detector 602 is CCD or CMOS, will be illuminated with polychromatic light separative element 30
Exemplified by 101 points of radiant light is three different-waveband λ 1, λ 2, λ 3, three different-waveband λ 1, λ 2, λ 3 light
Difference incident probe unit 60a, 60b, 60c, processor 70 is to each probe unit 60a, 60b, 60c
The image of collection is handled, and calculates the corresponding defect image contrast highest information of each wavelength state.
For example, in the experiment of cull defects detection, for the cull defect 1 and defect 2 of two kinds of thickness, using
Different illumination wavelengths, gray level image difference is as shown in Figure 5 and Figure 6.Under Fig. 7 is different illumination wavelengths,
The Analysis of Contrast result of drawbacks described above 1 and the image of defect 2.It can be found that for drawbacks described above 1, green glow
Contrast highest, the contrast of gold-tinted is minimum, and green glow contrast improves 100 times with respect to gold-tinted；For
Drawbacks described above 2, the contrast highest of feux rouges, the contrast of blue light is minimum, and feux rouges contrast is lifted with respect to blue light
11 times.The corresponding illumination wavelengths of two kinds of defect image highest contrasts are different.In summary：Due to defect
The diversity of species, detection device needs to be equipped with multi-wavelength illumination, meanwhile, in order to improve the work of detection device
Skill adaptability, is illuminated using broadband here, in end of probe increase polychromatic light separative element 30, realizes one
Number of drawbacks is detected in synchronization in individual visual field, and can export the defect of highest contrast in real time
Image.Compared to existing defect detection equipment, it is an advantage of the present invention that will using polychromatic light separative element 30
Lighting radiation light 101 is separated into several independent wave bands, and utilizes the one-to-one collection of some probe units 60
The image information of each wave band, user can be according to the operational characteristic of substrate 115 to be measured, without entering traveling wave
Long switching, it is possible to carry out the contrast image selection of optimal wave band illumination in real time, so as to improve defect inspection
The Technological adaptability of survey.
Please emphasis refer to Fig. 8, present invention also offers a kind of substrate defects detection method, comprise the following steps：
S1：Substrate 115 to be measured is uploaded to plummer 20, certainly, manual loading or transmission manipulator can be passed through
Automatic loading；
S2：Definition detection prescription, includes the information and the reference information of defect of substrate to be measured 115, such as silicon
Chip size, thickness, the size of chip, cycle etc.；Also include alignment mark and focal plane measurement point coordinates；Also
Including reference image information, defect type, size information etc.；
S3：Alignment focusing is performed, it is preferred that the execution alignment focusing includes：Set up the substrate to be measured
115 coordinate system, makes the substrate to be measured 115 be in the optimal imaging position of image-forming objective lens 114；
S4：Perform detection, the illumination that will be reflected using polychromatic light separative element 30 through the substrate 115 to be measured
Radiant light 101 is separated into several independent wave bands, and each described by the one-to-one collection of some probe units 60
The image information of wave band, according to information, the reference information of defect and the image information of the substrate 115 to be measured,
The defective data that each wave band is detected is obtained, for example, for a specific visual field, each probe unit
60 gather and preserve simultaneously the picture signal of each wave band, and processor 70 handles each band image signal, and output is each
Defect kind and number when illumination wavelength band；Processor 70 collects the defect detected when each wave band automatically
Species, and the number of all kinds of defects when different illumination wavelengths, all kinds of defects eventually detected are contrasted respectively
Number be respective most sensitive wavelength detection result；
S5：The defective data that each wave band is detected is compared, and is chosen most clever to each defect type
The defective data of quick wave band after the final defective data of correspondence defect type as exporting, it is preferred that described
Defective data includes：The quantity of defect, position, size and corresponding defect type letter in substrate 115 to be measured
Breath etc..
The present invention uses the above method, by when scanning, while performing at the scan data of each wave band
Reason, union, the corresponding defect result of output sensitivity highest wave band, so as to improve are taken to each wavelength result
The Technological adaptability of defects detection.
Present invention also offers another substrate defects detection means, as shown in figure 1, including：
There is provided lighting radiation light 101 for light source 10；
Plummer 20, for carrying substrate 115 to be measured, and drives the substrate to be measured 115 to move, this implementation
In example, the substrate 115 to be measured is silicon chip；
Imaging unit, the lighting radiation light 101 is converged in the substrate to be measured 115, and collect warp
The light that the substrate to be measured 115 reflects；
Polychromatic light separative element 30, the reflected light that the imaging unit is collected is separated into several independent ripples
Section；
Some probe units 60, the image information for one-to-one each wave band of collection；And
Processor 70, believes according to the information of the substrate 115 to be measured, the reference information of defect and described image
Breath, obtains the defective data that each wave band is detected, then the defective data that each wave band is detected enters
Row compares, choose to the defective data of the most sensitive wave band of each defect type as correspondence defect type most
Exported after whole defective data.
Can equally realize need not carry out wavelength switching, it is possible to carry out the contrast of optimal wave band illumination in real time
Image selection, so as to improve the effect of the Technological adaptability of defects detection.
In summary, the present invention is provided substrate defects detection means and detection method, the device include：Light
There is provided lighting radiation light 101 in source 10；Plummer 20, for carrying substrate 115 to be measured, and drives described
Substrate 115 to be measured is moved；Imaging unit, the substrate to be measured 115 is converged to by the lighting radiation light 101
On, and collect the light reflected through the substrate 115 to be measured；Polychromatic light separative element 30, the imaging is single
The reflected light that member is collected is separated into several independent wave bands；Some probe units 60, for one-to-one collection
The image information of each wave band；And processor 70, for carrying out analysis meter to the image information collected
Calculate, obtain defectoscopy result.In the present invention, using polychromatic light separative element 30 by lighting radiation light 101
Several independent wave bands are separated into, and gather using some probe units 60 image information of each wave band respectively,
User can be according to the operational characteristic of substrate 115 to be measured, without carrying out wavelength switching, it is possible to carry out in real time
The contrast image selection of optimal wave band illumination, so as to improve the Technological adaptability of defects detection.
Obviously, those skilled in the art can carry out various changes and modification without departing from the present invention to invention
Spirit and scope.So, if the present invention these modifications and variations belong to the claims in the present invention and its
Within the scope of equivalent technologies, then the present invention is also intended to including these changes and modification.
Claims (13)
1. a kind of substrate defects detection means, it is characterised in that including：
There is provided lighting radiation light for light source；
Plummer, for carrying substrate to be measured, and drives the basement movement to be measured；
Imaging unit, the lighting radiation light is converged in the substrate to be measured, and is collected through described to be measured
The light of substrate reflection；
Polychromatic light separative element, the reflected light that the imaging unit is collected is separated into several independent wave bands；
Some probe units, the image information for one-to-one each wave band of collection；And
Processor, for carrying out analysis calculating to the image information collected, obtains defectoscopy result.
2. substrate defects detection means as claimed in claim 1, it is characterised in that the wavelength of the light source
Scope covers ultraviolet, visible ray and infrared band.
3. substrate defects detection means as claimed in claim 1, it is characterised in that the light source uses LED
Light source, xenon lamp or Halogen lamp LED.
4. substrate defects detection means as claimed in claim 1, it is characterised in that the imaging unit according to
The secondary lighting radiation sent including collimation lens, attenuator, beam splitter and image-forming objective lens, the light source
Light is incident to the beam splitter light splitting after the collimation lens and attenuator, and passes through the image-forming objective lens
Converge in the substrate to be measured, the reflected light through the substrate to be measured reflection successively through the image-forming objective lens,
Received after beam splitter and polychromatic light separative element by the probe unit.
5. substrate defects detection means as claimed in claim 4, it is characterised in that the beam splitter is
Right angle Amici prism or semi-transparent semi-reflecting lens.
6. substrate defects detection means as claimed in claim 4, it is characterised in that the probe unit is set
It is placed at the focal plane conjugate position of the image-forming objective lens.
7. substrate defects detection means as claimed in claim 1, it is characterised in that the polychromatic light separation
Unit uses beam splitting dichroic mirror group or Amici prism.
8. substrate defects detection means as claimed in claim 1, it is characterised in that the probe unit bag
Include lens and planar array detector.
9. substrate defects detection means as claimed in claim 8, it is characterised in that the planar array detector
For CCD or CMOS.
10. a kind of substrate defects detection method, it is characterised in that comprise the following steps：
S1：Substrate to be measured is uploaded to plummer；
S2：Definition detection prescription, includes the information and the reference information of defect of substrate to be measured；
S3：Perform alignment focusing；
S4：Perform detection, the lighting radiation light that will be reflected using polychromatic light separative element through the substrate to be measured
Several independent wave bands are separated into, and are believed by the image of the one-to-one each wave band of collection of some probe units
Breath, according to the information of the substrate to be measured, the reference information of defect and image information, obtains each wave band
The defective data detected；
S5：The defective data that each wave band is detected is compared, and is chosen most clever to each defect type
The defective data of quick wave band is used as output after the final defective data of correspondence defect type.
11. substrate defects detection method as claimed in claim 10, it is characterised in that the execution pair
Quasi- focusing includes：The coordinate system of the substrate to be measured is set up, the substrate to be measured is in optimal imaging position.
12. substrate defects detection method as claimed in claim 10, it is characterised in that the number of defects
According to including：The quantity of defect, position, size and corresponding defect type information in substrate to be measured.
13. a kind of substrate defects detection means, it is characterised in that including：
There is provided lighting radiation light for light source；
Plummer, for carrying substrate to be measured, and drives the basement movement to be measured；
Imaging unit, the lighting radiation light is converged in the substrate to be measured, and is collected through described to be measured
The light of substrate reflection；
Polychromatic light separative element, the reflected light that the imaging unit is collected is separated into several independent wave bands；
Some probe units, the image information for one-to-one each wave band of collection；And
Processor, according to the information of the substrate to be measured, the reference information of defect and described image information, is obtained
The defective data detected to each wave band, then the defective data that each wave band is detected are compared,
Choose to the defective data of the most sensitive wave band of each defect type as the final number of defects for corresponding to defect type
According to rear output.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110320209B (en) * | 2018-03-30 | 2021-01-29 | 上海微电子装备（集团）股份有限公司 | Detection system and detection method |
| CN112379242A (en) * | 2020-10-27 | 2021-02-19 | 珠海格力电器股份有限公司 | Chip failure point positioning method, device and system |
| WO2022126677A1 (en) * | 2020-12-14 | 2022-06-23 | 紫创(南京)科技有限公司 | Semiconductor inspection device and inspection method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186637A (en) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | Pattern-defect detecting method |
| US20070081151A1 (en) * | 2005-10-06 | 2007-04-12 | David Shortt | Methods and systems for inspection of a wafer |
| US20070121106A1 (en) * | 2005-11-29 | 2007-05-31 | Yukihiro Shibata | Apparatus and method for optical inspection |
| CN101021490A (en) * | 2007-03-12 | 2007-08-22 | 3i系统公司 | Automatic detecting system and method for planar substrate |
| JP2009063383A (en) * | 2007-09-05 | 2009-03-26 | Ricoh Co Ltd | Inspection device and inspection method |
| CN101889197A (en) * | 2007-12-06 | 2010-11-17 | 株式会社尼康 | Inspecting apparatus and inspecting method |
| CN104704345A (en) * | 2012-07-02 | 2015-06-10 | 诺威量测设备股份有限公司 | Optical method and system for detecting defects in three-dimensional structures |
-
2016
- 2016-03-25 CN CN201610178525.3A patent/CN107230648A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186637A (en) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | Pattern-defect detecting method |
| US20070081151A1 (en) * | 2005-10-06 | 2007-04-12 | David Shortt | Methods and systems for inspection of a wafer |
| US20070121106A1 (en) * | 2005-11-29 | 2007-05-31 | Yukihiro Shibata | Apparatus and method for optical inspection |
| CN101021490A (en) * | 2007-03-12 | 2007-08-22 | 3i系统公司 | Automatic detecting system and method for planar substrate |
| JP2009063383A (en) * | 2007-09-05 | 2009-03-26 | Ricoh Co Ltd | Inspection device and inspection method |
| CN101889197A (en) * | 2007-12-06 | 2010-11-17 | 株式会社尼康 | Inspecting apparatus and inspecting method |
| CN104704345A (en) * | 2012-07-02 | 2015-06-10 | 诺威量测设备股份有限公司 | Optical method and system for detecting defects in three-dimensional structures |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110320209B (en) * | 2018-03-30 | 2021-01-29 | 上海微电子装备（集团）股份有限公司 | Detection system and detection method |
| CN112379242A (en) * | 2020-10-27 | 2021-02-19 | 珠海格力电器股份有限公司 | Chip failure point positioning method, device and system |
| WO2022126677A1 (en) * | 2020-12-14 | 2022-06-23 | 紫创(南京)科技有限公司 | Semiconductor inspection device and inspection method |
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