CN112226809A - Crucible for ingot casting monocrystalline silicon - Google Patents
Crucible for ingot casting monocrystalline silicon Download PDFInfo
- Publication number
- CN112226809A CN112226809A CN202011256379.4A CN202011256379A CN112226809A CN 112226809 A CN112226809 A CN 112226809A CN 202011256379 A CN202011256379 A CN 202011256379A CN 112226809 A CN112226809 A CN 112226809A
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- CN
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- Prior art keywords
- crucible
- groove
- ingot casting
- wall
- monocrystalline silicon
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- 238000005266 casting Methods 0.000 title claims abstract description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 62
- 238000010899 nucleation Methods 0.000 abstract description 12
- 230000006911 nucleation Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000007788 liquid Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000004781 supercooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to a crucible for ingot casting of monocrystalline silicon, which comprises a crucible bottom and a crucible wall, wherein the crucible bottom and the crucible wall are integrally arranged, a groove is formed in the central position of the upper end surface of the crucible bottom, and the upper end surface of the crucible bottom is arranged in a slope with a low middle part and a high periphery. By adopting the scheme, the invention overcomes the defects in the prior art, and provides the crucible for ingot casting of the monocrystalline silicon, which can ensure that polycrystalline nucleation cannot be generated when the ingot casting method is used for carrying out monocrystalline growth, and the possibility of polycrystalline nucleation of the ingot casting of the monocrystalline silicon is eliminated from the source; meanwhile, the ingot single crystal process is combined, a large amount of dislocation in the seed crystal can be eliminated, and the generation probability of the dislocation can be reduced to the minimum in the whole single crystal growth process.
Description
Technical Field
The invention relates to the technical field of silicon crystal growth, in particular to a crucible for growing monocrystalline silicon used for semiconductors and photovoltaic solar cells by ingot casting or casting.
Background
The existing single crystal silicon crystal growth mainly adopts a CZ method Czochralski single crystal growth mode. Generally, a quartz glass crucible is used for bearing polycrystalline silicon, after the polycrystalline silicon is melted in a furnace, a seed crystal is slowly hung into silicon liquid from the upper part, and after necking and shouldering processes, the silicon liquid is subjected to equal-diameter growth, wherein the crucible only needs to bear a silicon material, and crystal growth is carried out on the liquid level of the silicon liquid in the crucible.
The ingot single crystal is put into the crucible with the silicon material, but the seed crystal is at the bottom of the crucible. By bottom cooling, the crystal grows upward from the seed at the bottom. Currently, ingot single crystal growth is carried outThe manufacturers all adopt a quartz ceramic crucible which is the same as the polycrystalline silicon ingot, and seed crystals are fully paved at the bottom, and the size of the seed crystals is the same as or similar to that of the silicon wafer. The crucible has flat bottom, and gaps are formed between the seed crystals, between the seed crystals and the crucible wall and between the seed crystals and the crucible bottom, so that polycrystalline nucleation cannot be avoided, the top of the seed crystals is not melted and polycrystalline nucleation is generated at the top of the seed crystals, or the seed crystals are melted through and polycrystalline nucleation is formed at the bottom of the crucible. These causes lead to the fact that the cast single crystal contains a large amount of polycrystal and a large amount of dislocation is generated in the crystal, therefore, the seed crystal laying mode is a main cause which causes a large amount of polycrystal in the traditional ingot casting single crystal and is called as 'quasi-single crystal' or 'quasi-single crystal'. The existence of polycrystal inevitably results in that the conversion efficiency of the crystal cannot be improved. Meanwhile, in this method, since dislocations originated from the seed crystal cannot be reduced, and since temperature control is mainly used to ensure that the upper portion of the seed crystal is melted and the bottom portion is not completely melted, nucleation and generation of dislocations cannot be considered at all, and stress is generated due to the formation of a large amount of polycrystals, resulting in the generation of a large amount of dislocations (with a dislocation density as high as 10) inside the single crystal5/cm2Above), the quality of the monocrystalline fraction resulting in "mono-like" also fails to meet the requirements of photovoltaic cells.
Disclosure of Invention
The crucible for ingot casting monocrystalline silicon overcomes the defects of the prior art, can ensure that polycrystalline nucleation cannot be generated when the ingot casting method is used for carrying out monocrystalline growth, and eliminates the possibility of polycrystalline nucleation of ingot casting monocrystalline from the source; meanwhile, the ingot single crystal process is combined, a large amount of dislocation in the seed crystal can be eliminated, and the generation probability of the dislocation can be reduced to the minimum in the whole single crystal growth process.
In order to achieve the purpose, the invention adopts the technical scheme that: the utility model provides a crucible for ingot casting monocrystalline silicon, includes crucible bottom and crucible wall, crucible bottom and crucible wall integrative setting, the up end of crucible bottom is being located central point and is being provided with the recess, and the slope setting of low, high all around in the middle of the up end of crucible bottom is personally submitted.
Through adopting above-mentioned scheme, the design of recess is in order to ensure when the melt, and the seed crystal bottom can not melt when the top is totally melted, and the accuse temperature technology when this kind of structure makes the melt is simpler, and is bigger to the redundancy of temperature, and the perfect butt fusion of seed crystal also realizes more easily, and the crucible bottom sets up to the middle slope shape low, high all around, and the purpose has two: firstly, after the silicon material in the crucible is melted, the top end temperature of the silicon liquid is high, the bottom end temperature of the silicon liquid is low, a positive vertical temperature gradient from bottom to top is formed in the silicon liquid, the bottom of the crucible is in a slope shape, a horizontal temperature gradient with low middle and high periphery is formed at the bottom of the crucible under the condition of the vertical temperature gradient from bottom to top in the crucible, namely, a positive horizontal temperature gradient from inside to outside is formed at the bottom of the crucible under the condition of the vertical temperature gradient from bottom to top in the crucible, so that when a crystal grows, the crystal can be ensured to grow from a seed crystal positioned in the center of the bottom of the crucible, and other parts outside the range of the seed crystal at the bottom of the crucible cannot meet the condition of the supercooling degree required by crystal nucleation due to high temperature, and cannot generate polycrystalline nucleation; secondly, as the direction of dislocation is in the crystal plane with higher atomic density (the crystal plane is the {111} type crystal plane in the silicon crystal) during crystal growth, and the growth direction and the crystal plane where the dislocation is located have an angle, we only need to select the placement direction of the seed crystal (such as <100> crystal direction), so that when the seed crystal performs lateral growth at the bottom of the crucible, at least half of the original dislocation in the seed crystal extends to the bottom of the crucible, thereby eliminating more than half of the dislocation in the seed crystal.
The invention further provides that: the horizontal section of the groove is square, four slope surfaces are arranged between the edge of the upper end of the groove and the opposite crucible wall, and each slope surface is arranged around the groove.
By adopting the scheme, the bottom shape of the groove is consistent with the size and shape of the seed crystal, the cross section shape and the position of the groove are reasonably arranged, the bottom of the crucible outside the groove is in the shape of an inverted quadrangular frustum with low middle, high periphery and flat shape, and the structure is simple.
The invention further provides that: the side wall of the groove is perpendicular to the bottom surface of the groove.
Through adopting above-mentioned scheme, simple structure has reduced the production degree of difficulty.
The invention further provides that: the groove is arranged in an inverted quadrangular frustum pyramid shape, and the width of the upper end of the groove is larger than that of the lower end of the groove.
By adopting the scheme, the groove is in a quadrangular frustum pyramid shape, but the inclination angle of the side wall of the groove is less than or equal to 5 degrees, so that the seed crystal can be safely and conveniently placed.
The invention further provides that: the slope of the slope surface is 0.5-1.5 degrees.
By adopting the scheme, the gradient interval is reasonable, and polycrystal generation is easily caused when the gradient is too small; too high slope leads to high crucible processing cost and silicon material waste.
The invention further provides that: the depth of the groove is 7-10 mm, the thickness of the bottom of the crucible at the position corresponding to the bottom of the groove is 9-13 mm, the thickness of the bottom of the crucible at the position corresponding to the edge of the groove is 16-23 mm, and the thickness of the bottom of the crucible at the position corresponding to the wall of the crucible is 25-32 mm.
By adopting the above scheme, the arrangement of the groove, thickening treatment is carried out at the bottom of the crucible, and the design is reasonable.
The invention further provides that: the bottom and the wall of the crucible are made of quartz ceramic materials.
By adopting the scheme, the crucible is high-temperature resistant, good in thermal stability and low in cost.
The invention is further described below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic view of a structure for placing a seed crystal in a crucible;
FIG. 2 is a schematic view of a first cross-sectional structure of the crucible;
FIG. 3 is a first schematic top view of the crucible;
FIG. 4 is a schematic view of a second cross-sectional structure of the crucible;
FIG. 5 is a second schematic top view of the crucible.
Detailed Description
As shown in figures 1-5, a crucible for ingot casting of monocrystalline silicon, the crucible is integrally arranged in a square shape, and comprises a crucible bottom 1 and a crucible wall 2, the crucible bottom 1 and the crucible wall 2 are integrally arranged, the crucible bottom 1 and the crucible wall 2 are made of quartz ceramic materials, the top wall thickness of the crucible wall 2 and the bottom wall thickness of the crucible wall 2 can be the same, or the top wall thickness of the crucible wall 2 can be smaller than the bottom wall thickness of the crucible wall 2, a groove 11 is arranged at the central position of the upper end surface of the crucible bottom 1, the horizontal section of the groove 11 is arranged in a square shape, a seed crystal 3 matched with the shape of the groove 11 can be placed in the groove 11, the upper end surface of the crucible bottom 1 is arranged in a slope with a low middle part and high periphery, a slope surface 12 is arranged between the upper end edge of the groove 11 and the opposite crucible wall, the slope surfaces have slopes of 0.5-1.5, the slope surfaces 12 are arranged around the groove 11. Of course, the horizontal cross section of the groove 11 is not limited to a square shape, and may be arranged in a circular or polygonal shape.
In the present embodiment, the arrangement of the grooves 11 may be two types: firstly, the side wall of the groove 11 is vertical to the bottom surface of the groove 11; the groove 11 is arranged in an inverted quadrangular frustum pyramid shape, the width of the upper end of the groove 11 is larger than that of the lower end of the groove 11, and the inclination angle of the side wall of the groove 11 is less than or equal to 5 degrees.
In the embodiment, the depth of the groove 11 is 7-10 mm, the thickness of the crucible bottom 1 at the bottom of the corresponding groove 11 is 9-13 mm, the thickness of the crucible bottom 1 at the edge of the corresponding groove 11 is 16-23 mm, and the thickness of the crucible bottom 1 at the position of the corresponding crucible wall 2 is 25-32 mm.
During production, silicon materials are filled into a crucible, when the silicon materials are melted, as long as the temperature at the bottom of the crucible is ensured to be low enough and the temperature at the top of the crucible is ensured to be high enough, due to the existence of a vertical temperature gradient, the gradient design of the crucible can ensure that the planar distribution of the temperature at the bottom of the whole crucible forms the planar temperature distribution with low center and high periphery at the initial stage of crystal growth, as long as the temperature and the temperature gradient of the bottom and the top of the crucible are controlled, a solid-liquid interface can be ensured to be kept at the upper edge of a groove at the bottom of the crucible at the lowest time, so that the seed crystals in the groove are kept, meanwhile, the silicon materials above the crucible and the seed crystals above the groove are all melted, and.
In the initial stage of crystal growth, the melt temperature of all regions at the bottom of the crucible outside the groove is higher than the temperature corresponding to the supercooling degree delta T of crystallization, and the probability that polycrystalline silicon nucleation does not occur due to the fact that the supercooling degree needed by nucleation cannot be achieved in the regions outside the groove is avoided.
When the crystal is first grown transversely along the slope of the four slopes at the bottom of the crucible, half of the dislocations in the seed crystal will extend downward and terminate at the bottom of the crucible, so that more than 50% of the dislocations are eliminated when the bottom of the crucible is filled with the single crystal.
The crucible is designed with the following three:
example 1: assuming that the crucible is a G6 crucible, the crucible can cast a silicon ingot which can open 6x6=36 small silicon squares; the cross section of each silicon square is a square with a side length of 156 mm. The side length of the bottom of the crucible is 995 mm, and the wall thickness of the crucible wall is 15mm at the top and 20mm at the bottom; the side length of the central groove is 166mm, the depth is 7mm, the thickness of the crucible bottom at the bottom of the groove is 10mm, the thickness of the crucible bottom at the edge of the groove is 17mm, the thickness of the peripheral edge of the crucible bottom is 25mm, and at the moment, the gradient of the four slopes at the bottom of the crucible is 1.11 degrees.
Example 2: assuming that the crucible is a G7 crucible, the crucible can cast a silicon ingot which can open 7x7=49 small silicon squares; the cross section of each silicon square is a square with a side length of 156 mm. The side length of the bottom of the crucible is 1149 mm, the wall thickness of the crucible wall is 15mm at the top and 21mm at the bottom; the side length of the central groove is 181mm, the depth is 8mm, the thickness of the crucible bottom at the bottom of the groove is 11mm, the thickness of the crucible bottom at the edge of the groove is 19mm, the thickness of the peripheral edge of the crucible bottom is 28mm, and at the moment, the gradient of the four slopes at the bottom of the crucible is 1.07 degrees.
Example 3: assuming that the crucible is a G8 crucible, the crucible can cast a silicon ingot with the size of 8x8=64 small silicon squares; the cross section of each silicon square is a square with a side length of 156 mm. The side length of the bottom of the crucible is 1316 mm, the wall thickness of the crucible wall is 15mm at the top and 22mm at the bottom; the side length of the central groove is 210mm, the depth is 9mm, the thickness of the crucible bottom at the bottom of the groove is 12mm, the thickness of the crucible bottom at the edge of the groove is 21mm, the thickness of the peripheral edge of the bottom is 32mm, and at the moment, the gradient of the four slopes at the bottom of the crucible is 1.14 degrees.
The above embodiments are merely preferred embodiments of the present invention, and general changes and substitutions by those skilled in the art within the technical scope of the present invention are included in the protection scope of the present invention.
Claims (7)
1. The utility model provides a crucible for ingot casting monocrystalline silicon, includes crucible bottom and crucible wall, crucible bottom and crucible wall an organic whole set up its characterized in that: the upper end face of the bottom of the crucible is provided with a groove at the central position, and the upper end face of the bottom of the crucible is in a slope arrangement with a low middle part and a high periphery.
2. The crucible of claim 1, wherein: the horizontal section of the groove is square, four slope surfaces are arranged between the edge of the upper end of the groove and the opposite crucible wall, and each slope surface is arranged around the groove.
3. A crucible for ingot casting of monocrystalline silicon, in accordance with claim 2, characterized in that: the side wall of the groove is perpendicular to the bottom surface of the groove.
4. A crucible for ingot casting of monocrystalline silicon, in accordance with claim 2, characterized in that: the groove is arranged in an inverted quadrangular frustum pyramid shape, and the width of the upper end of the groove is larger than that of the lower end of the groove.
5. A crucible for ingot casting of monocrystalline silicon, in accordance with claim 2, characterized in that: the slope of the slope surface is 0.5-1.5 degrees.
6. A crucible for ingot casting of single crystal silicon as claimed in claim 1 or 2, wherein: the depth of the groove is 7-10 mm, the thickness of the bottom of the crucible at the position corresponding to the bottom of the groove is 9-13 mm, the thickness of the bottom of the crucible at the position corresponding to the edge of the groove is 16-23 mm, and the thickness of the bottom of the crucible at the position corresponding to the wall of the crucible is 25-32 mm.
7. A crucible for ingot casting of single crystal silicon as claimed in claim 1 or 2, wherein: the bottom and the wall of the crucible are made of quartz ceramic materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011256379.4A CN112226809A (en) | 2020-11-11 | 2020-11-11 | Crucible for ingot casting monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011256379.4A CN112226809A (en) | 2020-11-11 | 2020-11-11 | Crucible for ingot casting monocrystalline silicon |
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| Publication Number | Publication Date |
|---|---|
| CN112226809A true CN112226809A (en) | 2021-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011256379.4A Pending CN112226809A (en) | 2020-11-11 | 2020-11-11 | Crucible for ingot casting monocrystalline silicon |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928980A (en) * | 2010-09-17 | 2010-12-29 | 浙江碧晶科技有限公司 | Seeding guidance die for growing silicon crystal by directional solidification method |
| CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
| CN202440564U (en) * | 2011-12-31 | 2012-09-19 | 英利能源（中国）有限公司 | Monocrystalline-silicon-like ingot furnace and seed crystals used by same |
| CN102732943A (en) * | 2011-04-02 | 2012-10-17 | 上海太阳能工程技术研究中心有限公司 | Method for producing monocrystalline silicon cast ingot |
| US20150056123A1 (en) * | 2012-04-01 | 2015-02-26 | Jiang Xi Sai Wei Ldk Solar Hi-Tech Co., Ltd. | Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
| CN213739776U (en) * | 2020-11-11 | 2021-07-20 | 浙江普智能源装备有限公司 | Crucible for ingot casting monocrystalline silicon |
-
2020
- 2020-11-11 CN CN202011256379.4A patent/CN112226809A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928980A (en) * | 2010-09-17 | 2010-12-29 | 浙江碧晶科技有限公司 | Seeding guidance die for growing silicon crystal by directional solidification method |
| CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
| CN102732943A (en) * | 2011-04-02 | 2012-10-17 | 上海太阳能工程技术研究中心有限公司 | Method for producing monocrystalline silicon cast ingot |
| CN202440564U (en) * | 2011-12-31 | 2012-09-19 | 英利能源（中国）有限公司 | Monocrystalline-silicon-like ingot furnace and seed crystals used by same |
| US20150056123A1 (en) * | 2012-04-01 | 2015-02-26 | Jiang Xi Sai Wei Ldk Solar Hi-Tech Co., Ltd. | Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
| CN213739776U (en) * | 2020-11-11 | 2021-07-20 | 浙江普智能源装备有限公司 | Crucible for ingot casting monocrystalline silicon |
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