CN112204695A - 等离子体处理工具上基于图像的等离子体鞘轮廓检测 - Google Patents

等离子体处理工具上基于图像的等离子体鞘轮廓检测 Download PDF

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Publication number
CN112204695A
CN112204695A CN201980036340.0A CN201980036340A CN112204695A CN 112204695 A CN112204695 A CN 112204695A CN 201980036340 A CN201980036340 A CN 201980036340A CN 112204695 A CN112204695 A CN 112204695A
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CN
China
Prior art keywords
plasma sheath
plasma
image
substrate
processing
Prior art date
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Pending
Application number
CN201980036340.0A
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English (en)
Chinese (zh)
Inventor
王雨后
迈克尔·约翰·马丁
乔恩·麦克切斯尼
亚历山大·米勒·帕特森
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN112204695A publication Critical patent/CN112204695A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN201980036340.0A 2018-05-29 2019-05-23 等离子体处理工具上基于图像的等离子体鞘轮廓检测 Pending CN112204695A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/991,021 US10957521B2 (en) 2018-05-29 2018-05-29 Image based plasma sheath profile detection on plasma processing tools
US15/991,021 2018-05-29
PCT/US2019/033693 WO2019231814A1 (en) 2018-05-29 2019-05-23 Image based plasma sheath profile detection on plasma processing tools

Publications (1)

Publication Number Publication Date
CN112204695A true CN112204695A (zh) 2021-01-08

Family

ID=68692630

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980036340.0A Pending CN112204695A (zh) 2018-05-29 2019-05-23 等离子体处理工具上基于图像的等离子体鞘轮廓检测

Country Status (6)

Country Link
US (1) US10957521B2 (ja)
JP (2) JP2021525947A (ja)
KR (1) KR102528658B1 (ja)
CN (1) CN112204695A (ja)
TW (1) TWI794501B (ja)
WO (1) WO2019231814A1 (ja)

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Publication number Priority date Publication date Assignee Title
WO2019112903A1 (en) * 2017-12-05 2019-06-13 Lam Research Corporation System and method for edge ring wear compensation
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN116844934A (zh) 2019-02-05 2023-10-03 东京毅力科创株式会社 等离子体处理装置
US11894250B2 (en) * 2020-03-31 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for recognizing and addressing plasma discharge during semiconductor processes
JP2024084562A (ja) * 2022-12-13 2024-06-25 日新電機株式会社 プラズマ処理装置、及びその処理方法

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JPS63177415A (ja) * 1987-01-17 1988-07-21 Yuasa Battery Co Ltd プラズマ反応監視装置
JP2006173223A (ja) * 2004-12-14 2006-06-29 Toshiba Corp プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
CN101640181A (zh) * 2008-07-31 2010-02-03 佳能安内华股份有限公司 基底对准设备和基底处理设备
US20100024723A1 (en) * 2008-07-31 2010-02-04 Canon Anelvan Corporation Substrate alignment apparatus and substrate processing apparatus
US20150235381A1 (en) * 2012-09-10 2015-08-20 Industry-Academia Cooperation Group Of Sejong University Apparatus for imaging plasma particles and method for detecting etching end point using same
US20170032987A1 (en) * 2015-07-30 2017-02-02 Samsung Electronics Co., Ltd. Dry etching apparatus
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control

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US20070224709A1 (en) * 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
US20070244709A1 (en) * 2006-04-17 2007-10-18 Earthworks Systems, Llc Methods of producing and recycling plastic cards
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US7873052B2 (en) * 2007-04-16 2011-01-18 Pivotal Systems Corporation System and method for controlling process end-point utilizing legacy end-point system
US8288741B1 (en) * 2011-08-16 2012-10-16 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for three dimensional ion processing
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP6388520B2 (ja) * 2014-10-17 2018-09-12 住友重機械イオンテクノロジー株式会社 ビーム引出スリット構造、イオン源、及びイオン注入装置
US20170047202A1 (en) 2015-08-11 2017-02-16 Lam Research Corporation Magnetized edge ring for extreme edge control
US10269545B2 (en) 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
KR102439682B1 (ko) * 2017-01-18 2022-09-01 어플라이드 머티어리얼스, 인코포레이티드 고속 이미징에 의한 플라즈마 파라미터들 및 스큐 특성화
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177415A (ja) * 1987-01-17 1988-07-21 Yuasa Battery Co Ltd プラズマ反応監視装置
JP2006173223A (ja) * 2004-12-14 2006-06-29 Toshiba Corp プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
CN101640181A (zh) * 2008-07-31 2010-02-03 佳能安内华股份有限公司 基底对准设备和基底处理设备
US20100024723A1 (en) * 2008-07-31 2010-02-04 Canon Anelvan Corporation Substrate alignment apparatus and substrate processing apparatus
US20150235381A1 (en) * 2012-09-10 2015-08-20 Industry-Academia Cooperation Group Of Sejong University Apparatus for imaging plasma particles and method for detecting etching end point using same
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US20170032987A1 (en) * 2015-07-30 2017-02-02 Samsung Electronics Co., Ltd. Dry etching apparatus
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control

Also Published As

Publication number Publication date
US20190371581A1 (en) 2019-12-05
US10957521B2 (en) 2021-03-23
TW202015093A (zh) 2020-04-16
KR102528658B1 (ko) 2023-05-03
WO2019231814A1 (en) 2019-12-05
JP2021525947A (ja) 2021-09-27
TWI794501B (zh) 2023-03-01
JP2024081722A (ja) 2024-06-18
KR20210003952A (ko) 2021-01-12

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