CN112185912B - 包含热电路的半导体组合件及其制造方法 - Google Patents

包含热电路的半导体组合件及其制造方法 Download PDF

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CN112185912B
CN112185912B CN202010620583.3A CN202010620583A CN112185912B CN 112185912 B CN112185912 B CN 112185912B CN 202010620583 A CN202010620583 A CN 202010620583A CN 112185912 B CN112185912 B CN 112185912B
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substrate
thermal
semiconductor
graphene layer
semiconductor device
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CN112185912A (zh
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C·H·育
O·R·费伊
仲野英一
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本申请案涉及包含热电路的半导体组合件及其制造方法。本文中揭示包含热层的半导体组合件以及相关联系统及方法。在一些实施例中，所述半导体组合件包括在衬底上方的一或多个半导体装置。所述衬底包含经配置以沿着侧向平面且跨所述衬底转移热能的热层。使用一或多个热连接器沿着非侧向方向将所述热能从所述半导体装置转移到石墨烯层。

Description

包含热电路的半导体组合件及其制造方法
(若干)相关申请案的交叉参考
本申请案含有与陈H.柳(Chan H.Yoo)及欧文R.费伊(Owen R.Fay)同时申请的标题为“包含垂直集成电路的半导体组合件及其制造方法(SEMICONDUCTOR ASSEMBLIESINCLUDING VERTICALLY INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THESAME)”的美国专利申请案的标的物，所述专利申请案转让给美光科技有限公司(MicronTechnology,Inc.)，且由代理人案号010829 9398.US00标识，且其全文以引用方式并入本文中。
技术领域
本技术涉及半导体装置，例如存储器装置及处理器，且若干实施例涉及包含热电路的半导体组合件。
背景技术
半导体制造的当前趋势是制造用于计算机、手机、寻呼机、个人数字助理及许多其它产品的具有更高密度的组件的更小且更快的装置。所有半导体装置均产生热量，且因此消散此热量对于高性能装置的最优且可靠操作来说是必需的。此外，随着速度及组件密度增加，热量成为许多产品中的限制因素。例如，产生80瓦特到100瓦特的高性能装置可能无法在额定电平下操作或可能降级，除非消散一些热量。因此，热量消散是制造微特征装置的重要设计因素。
图1A是常规半导体装置组合件100(“组合件100”)的俯视图，且图1B是沿着图1A的线1B--1B截取的图1A中所展示的组合件100的示意性横截面视图。一起参考图1A及1B，组合件100包含附接到例如主板的组合件衬底102(例如，印刷电路板(PCB))的一或多个半导体装置。组合件100包含一或多个模块104，每一模块104包含附接到模块衬底108(例如，PCB)的一或多个半导体装置106(例如，裸片或封装)。模块104包含例如双列直插式存储器模块(DIMM)的存储器模块，所述存储器模块包含经由焊料附接到PCB的动态随机存取存储器(DRAM)芯片(例如，倒装芯片)。
半导体装置106在操作期间产生热量。常规设计依赖于将热能从半导体装置106吸走并吸入周围环境中的散热器110。然而，散热器110占用空间，由此显著地增加装置占据面积。散热器110通过接触表面转移热能，从而进一步增加复杂性。因此，除非接触表面充分地及/或均匀地覆盖半导体装置106内的热量产生位置，否则散热片及散热器会引起跨所述组件的非均匀温度，这会随时间推移导致结构变化或变形。此外，如图1B中所展示，增加的密度通常减小半导体装置106与散热器110之间的分离距离。因而，由一个组件产生的热量会影响相邻组件，从而由于组件之间的连接而大大减少热量消散。
其它常规组件通常不具有热量消散组件。例如，用于半导体装置106的载体，例如组合件衬底102及/或模块衬底108，通常经配置以为装置及/或装置的电连接件提供结构附接/支撑。此类衬底或板通常包含被外层114包围的芯112。芯112通常包含编织玻璃纤维(例如，FR-4)，其是热绝缘体。另外，外层114通常包含也充当热绝缘体的材料(例如，焊料掩模)。
发明内容
在一个方面中，本申请案提供一种半导体组合件，其包括：衬底；半导体装置，其在所述衬底上方；及热连接器，其在所述衬底与所述半导体装置之间，所述热连接器用于在所述衬底与所述半导体装置之间转移热能；其中：所述衬底包含石墨烯层，所述石墨烯层经耦合到所述热连接器且经配置以跨所述衬底沿着水平方向转移所述热能。
在另一方面中，本申请案一种半导体模块，其包括：衬底；半导体装置，其在所述衬底上方；及连接器，其在所述衬底与所述半导体装置之间，所述热连接器用于在所述衬底与所述半导体装置之间转移热能；其中：所述衬底包含石墨烯层，所述石墨烯层经耦合到所述热连接器且经配置以跨所述衬底沿着水平面转移所述热能。
在另一方面中，本申请案提供一种制造半导体封装的方法，所述方法包括：提供包含石墨烯层的衬底，所述石墨烯层用于跨所述衬底转移热能；及在所述衬底上方安装半导体装置，其中安装包含经由一或多个热连接器将所述半导体装置热耦合到所述石墨烯层。
附图说明
图1A是常规半导体装置组合件的俯视图。
图1B是沿着图1A的线1B--1B截取的图1A中所展示的常规半导体装置组合件的示意性横截面视图。
图2A是根据本技术的实施例的半导体装置组合件的俯视图。
图2B是沿着图2A的线2B--2B截取且根据本技术的实施例配置的图2A中所展示的半导体装置组合件的示意性横截面视图。
图3是根据本技术的实施例的半导体装置的示意性横截面视图。
图4是根据本技术的实施例的半导体模块的示意性横截面视图。
图5A是说明根据本技术的实施例的制造衬底的方法的流程图。
图5B是说明根据本技术的实施例的制造半导体模块的方法的流程图。
图6是包含根据本技术的实施例配置的半导体组合件的系统的示意性视图。
具体实施方式
在以下描述中，论述众多特定细节以提供对本技术的实施例的透彻及可行的描述。然而，相关领域技术人员将认识到，可在没有一或多个特定细节的情况下实践本发明。在其它情况下，未展示或未详细描述通常与半导体装置相关联的众所周知的结构或操作，以避免使本技术的其它方面难以理解。通常，应理解，除本文中所揭示的那些特定实施例之外的各种其它装置、系统及方法也可在本技术的范围内。
根据本技术的半导体装置、封装及/或组合件的若干实施例可包含经专门配置以远离一或多个热量产生组件(例如，处理及/或存储器裸片)路由及消散热能的热路由电路。在路由热能时，热路由电路可沿着与热量转移的自然方向(例如，沿着垂直或向上方向)不同的一或多个方向(例如，沿着水平面)路由或转移热能。在一些实施例中，热路由电路可包含热转移层或迹线、热通孔、热连接器、散热器或其组合。在一或多个实施例中，热转移层或迹线可包含经配置以跨平面转移热能的石墨烯结构。下文描述关于热路由电路的细节。
图2A是半导体装置组合件200(“组合件200”)的俯视图，且图2B是沿着图2A的线2B--2B截取的图2A中所展示的半导体装置组合件200的示意性横截面视图。一起参考图2A及2B，组合件200可包含连接到例如主板的组合件结构202(例如，PCB)的半导体装置。在一些实施例中，组合件200可包含半导体模块204，所述半导体模块204包含安装在模块衬底214(例如，PCB)上的一或多个半导体装置212(图2B，例如，半导体裸片及/或封装)。如图2A中所说明，半导体模块204可包含例如双列直插式存储器模块(DIMM)的存储器模块，所述存储器模块包含经由焊料附接到PCB的动态随机存取存储器(DRAM)芯片(例如，倒装芯片)。在一些实施例中，组合件200可进一步包含其它半导体装置，例如直接附接到组合件结构202的处理器(例如，中央处理单元(CPU)及/或图形处理单元(GPU))。
组合件200可包含图2A的电连接件206，所述电连接件206电耦合组合件结构202上的各个组件，从而形成(若干)电路。电连接件206的一些实例可包含在所连接组件之间传达信号及/或电压的电线及/或表面迹线。电连接件206的其它实例可包含嵌入在一或多个组件内的导电结构，例如嵌入在组合件结构202中的迹线及/或连接平面、组合件结构202中的贯穿通孔及/或半导体组件中的通孔(例如，穿硅通孔(TSV))或其组合。此外，电连接件206可包含在所连接结构之间传导电信号/电压的图2B的组件电连接器208。例如，组件电连接器208可包含将半导体装置连接到模块衬底214及/或组合件结构202的焊料凸块、接合线及/或导电柱。而且，组件电连接器208可包含将半导体模块204连接到组合件结构202的引脚及插座的组合。
连同电连接件206一起，组合件200可包含经配置以从所连接组件转移热能及将热能转移到所连接组件的热导体。因此，组合件200可包含用于将热量从一或多个组件(例如，半导体装置)转移到例如散热器222的热量消散组件的热电路。在一或多个实施例中，热导体可包含经配置以沿着平面转移热能的石墨烯结构(例如，迹线及/或层)。石墨烯材料可为沿着一或多个层布置使得碳原子沿着平面布置成六边形晶格的碳。因此，石墨烯结构可既导电又导热。在一些实施例中，热导体可进一步包含经配置以在所连接组件之间转移热能的金属结构(例如，铜、铝等)。
在一或多个实施例中，热导体(例如，石墨烯结构)可经嵌入在半导体装置及/或衬底(例如，PCB)内及/或与其成一体。例如，热导体可用于形成装置热电路、模块热电路、组合件热电路或其组合。在一些实施例中，热导体可进一步经配置以同时为组合件200提供电连接(例如，电源及/或接地连接)。在其它实施例中，热导体可与电连接件206电隔离。
装置热电路可包含一组结构(例如，半导体装置212的组件/半导体装置212内的组件及/或附接到半导体装置212的组件)，例如装置热层232、耦合到装置热层232的一或多个热连接器234及/或经配置以路由热能通过半导体装置212并从半导体装置212消散热能的散热器222中的一或多者。在一些实施例中，装置热层232可包含由金属及/或石墨烯材料制成且经配置以沿着平面/跨平面从对应半导体装置212转移热能的路径(例如，迹线)及/或平面结构。热连接器234可包含经配置以将热能转移出热层232及对应半导体装置212的导热(例如，金属材料)结构。例如，热连接器234可包含导电凸块、连接器及/或通常用于在装置之间传达电信号的其它金属结构。装置热层232可贯穿或沿着半导体装置212沿着平面(例如，如图2B中所展示的垂直平面)吸收及路由热能。在一些实施例中，可附接(经由，例如，导热粘合剂)装置热层232。在一些实施例中，装置热层232可直接接触热连接器234且为热能离开半导体装置212提供额外路径。
如上文所描述，在一些实施例中，热连接器234可与电连接件206电隔离且经配置以仅转移热能。在其它实施例中，热连接器234可用于将半导体装置212电连接到其它装置及/或电压电平(例如，电源或接地)。下文描述关于装置热电路的进一步细节。
与装置热电路类似，模块热电路可包含经配置以路由热能通过半导体模块204并从中消散热量的一组结构，例如模块热层242及/或一或多个热通孔244。热通孔244可包含经配置以将热能转移到对应半导体模块204中及/或从其转移出的导热结构(例如，金属结构)。在一些实施例中，热通孔244可直接接触热连接器234且将热能从所附接半导体装置转移到模块热层242。模块热层242可包含由金属及/或石墨烯材料制成且经配置以沿着/跨平面转移热能的路径(例如，迹线)及/或平面结构。在一些实施例中，模块热层242可沿着与通过热通孔244的转移方向正交的方向/平面转移热能。如图2B中所说明，模块热层242可经配置以沿着垂直平面将热能转移到模块散热器(例如，散热器222的一或多个例子)。模块散热器可直接附接(经由，例如，导热粘合剂)到模块衬底214及/或其中的模块热层242。因此，模块散热器246可经配置以接收及消散经由模块热层242通过/跨模块衬底214转移的热量(例如，由半导体装置212产生的热能)。
在一些实施例中，模块热层242可进一步连接到组合件结构202及/或其中的组合件热电路。组合件热电路可包含经配置以通过/跨组合件结构202路由热能的一组导热结构，例如组合件热层252、组合件热连接器254或其组合。组合件热连接器254可包含可将模块热层242连接或热耦合到组合件热层252的热通孔或其它金属结构。与模块热层242类似，组合件热层252可包含由金属及/或石墨烯材料制成且经配置以沿着平面/跨平面转移热能的路径(例如，迹线)及/或平面结构。
如图2B中所说明，组合件热层252可沿着侧向平面将热能转移到组合件散热器(散热器222的一或多个例子)。组合件散热器可包含热耦合(经由，例如，直接接触及/或热界面材料(TIM))到组合件热层252的散热鳍片。组合件散热器可经配置以消散热能，例如由半导体装置212产生的通过组合件热层252载送的热量。组合件散热器及热量产生源(例如，半导体装置212)可分离达沿着平行于跨组合件热层252的热量转移方向的方向(例如，水平方向)测量的分离距离260。
因此，半导体装置组合件200可使用热连接器234、模块热层242、热通孔244及/或组合件热层252来跨一或多个衬底(例如，PCB)转移来自半导体装置212的热量且在不同位置处消散热量。热量源与消散位置之间的间隔改进半导体装置组合件200的热量管理能力。分离距离允许热能在更宽区域上消散且降低给定区域内的热集中。此外，上文所描述的热电路允许半导体装置组合件200将热能分配到更宽区域上的不同位置。
在一些实施例中，热层(例如，模块热层242及/或组合件热层252)可充当相应衬底的芯。换句话说，热层可取代图1A和1B的传统芯112，例如玻璃纤维芯，用于PCB。在其它实施例中，除传统芯112(在图2B中使用虚线所说明)之外，热层还可包含在相应衬底中。
在一些实施例中，当热层取代传统芯112时，衬底可进一步包含经配置以在结构上加强热层的加强件262。在一些实施例中，加强件262可包含经配置以为对应衬底提供刚性的机械结构，例如支架、板、梁等。因此，加强件262可减小可能由外力引起的对热层的物理应力、冲击、弯曲等。
在一些实施例中，热层可包含用于相对于衬底的其它外层附接的配置(例如，形状、孔及/或尺寸)。例如，石墨烯层可经围封在外层(例如，层压体)内使得石墨烯层的顶表面及底表面及至少一个外围侧被外层覆盖。而且，石墨烯层可包含可接触衬底的其它层/部分的突起的凹陷部或孔，由此将石墨烯层贴附到其它层/部分。在一些实施例中，可层压或形成环氧材料(例如，用于外层)以填充石墨烯层中的凹陷部/孔且接着进行固化以贴附石墨烯层。
图3是根据本技术的实施例的半导体装置300的示意性横截面视图。半导体装置300可包含半导体裸片及/或半导体封装。如图3中所说明，例如，半导体装置300可包含倒装芯片。在一些实施例中，半导体装置300可包含逻辑或处理装置、存储器装置及/或组合装置。
在一些实施例中，半导体装置300可包含形成在半导体衬底304(例如，硅衬底)上方的有源表面302上的有源电路(例如，晶体管)。如上文所描述，半导体装置300可包含用于分配及路由由有源电路产生的热能的图2A和2B的装置热电路。半导体装置300可包含经配置以沿着平面转移热能的热分配层306(例如，石墨烯迹线及/或石墨烯板)。例如，半导体装置300可沿着水平方向跨半导体衬底304转移由有源电路产生的热量，如图3中所说明。
在一些实施例中，半导体装置300可包含经配置以分散由有源电路产生的热量的散热器308。散热器308可经附接到与有源表面302相对的半导体衬底304。
半导体装置300可包含经配置以将半导体装置300耦合到外部电路/结构的外部连接器310(例如，焊料凸块或柱)。外部连接器310可包含电连接器及/或热连接器312。热连接器312可包含经配置以沿着与热分配层306正交的方向(例如，垂直方向)转移热能的金属结构。
在一些实施例中，半导体装置300可包含经配置以沿着与热分配层306的平面正交的方向(例如，垂直方向)在半导体装置300内转移热能的TSV 314。TSV 314可热耦合(经由，例如，直接接触及/或TIM)到热分配层306。在一或多个实施例中，TSV 314可进一步耦合到热连接器312及/或散热器308。
热分配层306(例如，石墨烯层)及/或TSV 314为半导体装置300提供增强的热管理。石墨烯结构可增强水平地转移热量的效率，而非依赖于通常为热绝缘体的半导体衬底304来将热量从有源电路转移走。因此，石墨烯层可减少半导体装置300内的热点。此外，石墨烯层、TSV 314及热连接器312可提供用于将热量从半导体装置300中去除的额外路线(即，在传统装置中不可用)。
图4是根据本技术的实施例的半导体模块400的示意性横截面视图。在一些实施例中，半导体模块400可包含电路卡。例如，半导体模块400可包含存储器模块，例如双列直插式存储器模块(DIMM)。在一些实施例中，半导体模块400可包含安装在模块衬底404(例如，PCB)上的半导体装置402。半导体装置402(例如，图3的半导体装置300)可经由例如焊料凸块、引线等的外部连接器附接到模块衬底404。
如上文所描述，半导体模块400可包含用于分配及路由由半导体装置402产生的热能的图2A和2B的模块热电路。半导体模块400可包含经配置以将热量转移出半导体装置402及将热量转移到模块衬底404中的热连接器412。模块衬底404可包含至少部分地延伸穿过模块衬底404的外层406(举例来说，例如用于焊接掩模的聚合物材料)的热通孔444。热通孔444可经暴露在外层406的顶表面处且热耦合(经由，例如，直接接触及/或TIM)到热连接器412。因此，热通孔444可用于转移通过热连接器412从半导体装置402接收的热能。
半导体模块400可包含经配置以沿着平面转移热能的热分配层408(例如，石墨烯迹线及/或石墨烯板)。例如，使用热分配层408及热通孔444，半导体模块400可沿着水平方向跨模块衬底404接收及转移由半导体装置402产生的热量，如图4中所说明。在一些实施例中，热分配层408可经嵌入在外层406中使得外层406可覆盖底表面、顶表面及/或至少一个外围表面。在一些实施例中，模块衬底404除包含热分配层408之外还可包含芯112(例如，玻璃纤维材料)。在其它实施例中，热分配层408可取代传统芯112。
模块衬底404可包含用于提供电连接的电连接层410(例如，迹线及/或平面)。在一些实施例中，电连接层410可与热分配层408电隔离。在其它实施例中，电连接层410可经耦合到热分配层408。例如，热分配层408可将半导体装置402连接到电压源及/或接地。
在一些实施例中，半导体模块400可包含热耦合到热分配层408的一或多个散热器446。例如，散热器446可经附接到模块衬底404的顶表面、底表面及/或外围表面。散热器446可与半导体装置402分离达距离448。因此，散热器446可在与半导体装置402间隔达距离448的位置处接收及消散来自半导体装置402的热能。
图5A是说明根据本技术的实施例的制造衬底的方法500的流程图。方法500可用于制造上文所描述的一或多个衬底，例如图2B中所说明的组合件结构202及/或模块衬底214。方法500可用于制造上文所描述的热电路的一或多个组件(例如，热导体)。
在一些实施例中，例如在框501处所说明，可提供芯结构(例如，图1A和1B的芯112)。例如，可提供玻璃纤维或其它适当结构以用作衬底的芯112。
在框502处，可提供石墨烯结构或其它导热材料。当芯结构可用时，可将石墨烯结构连接或附接到芯。否则，可将石墨烯结构用作芯。石墨烯结构可包含可沿着平面布置的迹线及/或板。
在框504处，可在石墨烯层上形成中间层。中间层可包含电绝缘体。例如，可将聚合物/树脂材料施加在石墨烯结构且例如经由光、化学试剂、热量等进行固化。在一些实施例中，如框512处所说明，例如经由单独刚性结构或经由形成刚性中间层，可在结构上加强石墨烯结构。
在一些实施例中，如框514所说明，可贴附石墨烯结构。例如，用于中间层的材料可在固化之前填充石墨烯结构中的凹陷部及/或孔。因此，经固化材料可接触中间层与石墨烯层并在中间层与石墨烯层之间提供压缩配合及/或锁定。在一些实施例中，可基于使用粘合剂将石墨烯结构附接到中间层来锁定石墨烯结构。
在框506处，可在中间层上形成电连接件(例如，迹线及/或板)。例如，形成电连接件可包含形成掩模且接着在掩模的开口中沉积金属材料(例如，铜、铝等)。在一些实施例中，形成电连接件可包含形成图2A和2B的热通孔244，例如经由掩蔽且接着沉积金属材料。
在框508处，可在中间层及电连接件上方形成外层(例如，聚合物材料，例如焊料掩模)。例如，可通过在中间层及电连接件上层压聚合物材料来形成外层。而且，与中间层类似，可基于施加聚合物材料且固化聚合物材料来形成外层。
图5B是说明根据本技术的实施例的制造半导体模块的方法550的流程图。方法550可用于制造图2A的半导体组合件200或半导体组合件200的部分(例如，模块)、图4的半导体模块400或其组合。方法550可用于形成图2B中所说明的热电路或所述热电路的部分，例如装置热电路、模块热电路、组合件热电路或其组合。
在框552处，可提供衬底(例如，PCB)。例如，衬底结构，例如图2A的模块衬底214及/或图4的模块衬底404，可包含经配置以如上文所描述那样跨平面转移热能的一或多个热层(例如，石墨烯结构)。
在框554处，可在衬底上方安装半导体装置(例如，裸片、封装、模块等)。例如，可在衬底上方安装图2B的半导体装置212及/或图3的半导体装置300。而且，图4的半导体模块400可经附接到图2A的组合件结构202。在一些实施例中，安装半导体装置可包含放置装置且使焊料回流。在其它实施例中，安装半导体装置可包含将装置附接到衬底(经由，例如，粘合剂)及/或将电连接件(例如，接合线)单独地附接到半导体装置。
在框556处，可将一或多个散热器附接到衬底。例如，散热器222(例如，图2B中所说明的装置散热器236、模块散热器及/或组合件散热器256)可热耦合到热分配层(例如，石墨烯结构)。散热器222可经由与石墨烯结构的直接接触及/或经由TIM而热耦合。
上文参考图2A到5B所描述的半导体装置中的任一者可经并入到无数的更大及/或更复杂的系统中的任一者中，所述系统的代表性实例是图6中示意性地展示的系统690。系统690可包含半导体装置600(“装置600”)(例如，半导体装置、封装及/或组合件)、电源692、驱动器694、处理器696及/或其它子系统或组件698。装置600可包含通常与上文所描述的那些装置类似的特征。所得系统690可执行各种各样的功能中的任一者，例如存储器存储、数据处理及/或其它合适功能。因此，代表性系统690可包含但不限于手持装置(例如，移动电话、平板电脑、数字阅读器及数字音频播放器)、计算机及器具。系统690的组件可经容纳在单个单元中或经分布在多个互连单元上(例如，通过通信网络)。系统690的组件还可包含远程装置及各种各样的计算机可读媒体中的任一者。
本发明并非意在穷举性或将本技术限制于本文中所揭示的精确形式。尽管本文中出于说明性目的而揭示特定实施例，但是在不脱离本技术的情况下，各种等效修改是可能的，如相关领域一般技术人员将认识到。在一些情况下，未展示或详细描述众所周知的结构及功能，以避免不必要地使本技术的实施例的描述难以理解。尽管本文中可以特定顺序呈现方法的步骤，但是替代实施例可以不同顺序执行步骤。类似地，在特定实施例的上下文中所揭示的本技术的某些方面可在其它实施例中被组合或消除。此外，虽然可能已在那些实施例的上下文中揭示与本技术的某些实施例相关联的优点，但是其它实施例也可展现此类优点，且并非所有实施例均必需展现此类优点或本文中所揭示的其它优点落入本技术的范围内。因此，本发明及相关联技术可涵盖本文中未明确展示或描述的其它实施例，且本发明不受限于所附权利要求书。
贯穿本发明，除非上下文另有明确指示，否则单数术语“一”、“一个”及“所述”包含复数对象。类似地，除非单词“或”明确地限制于仅表示相对于两个或多个项目的列表与其它项目互斥的单个项目，否则在此列表中使用“或”应被解释为包含(a)所述列表中的任何单个项目、(b)所述列表中的所有项目，或(c)所述列表中的项目的任何组合。另外，术语“包括”、“包含”及“具有”自始至终用于表示至少包含(若干)所叙述特征使得不排除任何更多数目个相同特征及/或额外类型的其它特征。本文中对“一个实施例”、“实施例”、“一些实施例”或类似表述的引用表示结合所述实施例描述的特定特征、结构、操作或特性可包含在本技术的至少一个实施例中。因此，本文中此类短语或表述的出现不一定均指同一实施例。此外，在一或多个实施例中，各种特定特征、结构、操作或特性可以任何合适方式组合。

Claims (21)

1.一种半导体组合件，其包括：
衬底，其具有顶表面且包括位于所述顶表面下方并沿横向平面延伸的石墨烯层，所述石墨烯层经配置以跨所述衬底沿着横向方向转移热能；
半导体装置，其在所述衬底的所述顶表面上方；
热连接器，其在所述衬底的相对表面与所述半导体装置之间并直接接触所述衬底的相对表面与所述半导体装置，所述热连接器经配置以在所述衬底的所述石墨烯层与所述半导体装置之间转移热能；以及
散热器，其在所述衬底的所述顶表面上方且在所述衬底的相对外围边缘之间，所述散热器热耦合到所述石墨烯层以消散来自所述石墨烯层的所述热能。
2.根据权利要求1所述的半导体组合件，其中所述散热器及所述半导体装置沿着所述横向方向分离达一定距离而不彼此重叠。
3.根据权利要求1所述的半导体组合件，其中所述衬底是在所述石墨烯层上面或下面包含外层的印刷电路板PCB。
4.根据权利要求3所述的半导体组合件，其中所述石墨烯层是所述PCB的芯。
5.根据权利要求3所述的半导体组合件，其进一步包括平行于所述石墨烯层延伸的芯，其中所述石墨烯层经安置在所述芯与所述外层之间。
6.根据权利要求1所述的半导体组合件，其中：
所述衬底及所述半导体装置包括模块；
所述半导体组合件包括系统；且
进一步包括：
系统衬底，其经耦合到所述模块，其中
所述模块与所述系统衬底正交连接，及
所述系统衬底包含第二热层，所述第二热层经耦合到所述模块的所述石墨烯层以跨所述系统衬底转移所述热能且与所述石墨烯层正交。
7.根据权利要求6所述的半导体组合件，其中所述散热器在所述系统衬底上方且热耦合到所述第二热层以接收及消散来自所述半导体装置的所述热能。
8.根据权利要求1所述的半导体组合件，其中所述衬底包含：
外层，其在所述石墨烯层上方，所述外层具有顶表面；及
热通孔，其经暴露在所述顶表面上且朝向所述石墨烯层至少部分地延伸穿过所述外层，其中所述热通孔直接附接到将所述热连接器和所述石墨烯层。
9.根据权利要求8所述的半导体组合件，其中所述热连接器包含直接接触所述热通孔的焊料。
10.根据权利要求8所述的半导体组合件，其中所述热通孔及所述石墨烯层与所述半导体装置电隔离。
11.根据权利要求8所述的半导体组合件，其中所述热通孔及所述石墨烯层经配置以提供到及/或来自所述半导体装置的电连接。
12.根据权利要求11所述的半导体组合件，其中所述热通孔及所述石墨烯层经配置以为所述半导体装置提供电源或电接地。
13.根据权利要求1所述的半导体组合件，其中所述半导体装置包含：
半导体衬底；
电路，其形成在所述半导体衬底的有源侧上或周围；及
装置热层，其设置在所述半导体衬底中且位于所述衬底的所述有源侧和相对侧之间，所述装置热层经配置以跨所述半导体衬底沿着横向平面转移所述热能。
14.根据权利要求13所述的半导体组合件，其中：
所述半导体衬底包括从所述相对侧垂直延伸到所述装置热层的硅通孔TSV；且
进一步包括：
装置散热片，其直接附接到所述相对侧并热耦合到所述TSV。
15.根据权利要求1所述的半导体组合件，其中所述散热器直接附接到所述石墨烯层。
16.一种半导体模块，其包括：
衬底，其包括在所述衬底的第一外围边缘和第二外围边缘之间延伸的石墨烯层，其中：
所述石墨烯层经配置以跨所述衬底沿着一个方向转移热能，以及
所述衬底的所述第二外围边缘经配置以将所述衬底结构性且电性地连接到系统衬底，其中所述石墨烯层经配置以通过所述第二外围边缘将所述热能转移到所述系统衬底；
半导体装置，其安装在在所述衬底上；
热连接器，其在所述衬底的相对表面与所述半导体装置之间且直接接触所述衬底的相对表面与所述半导体装置，所述热连接器经配置以在所述衬底的所述石墨烯层与所述半导体装置之间转移热能；以及
散热器，其附接到所述衬底的所述第一外围边缘，其中所述散热器直接附接到所述石墨烯层以消散来自所述石墨烯层的所述热能。
17.根据权利要求16所述的半导体模块，其中：
所述石墨烯层具有一对相对侧；且
所述衬底包含外层，所述外层在至少暴露所述一对相对侧的同时围封所述石墨烯层。
18.根据权利要求17所述的半导体模块，其中：
所述衬底包括印刷电路板PCB；且
所述石墨烯层包括所述PCB的芯。
19.根据权利要求18所述的半导体模块，其中所述衬底包含经配置以在结构上加强所述芯的加强件。
20.根据权利要求16所述的半导体模块，其中所述半导体模块包括经配置以被断言到所述系统衬底中的存储器模块。
21.一种制造半导体封装的方法，所述方法包括：
提供包含石墨烯层的衬底，所述石墨烯层在所述衬底的第一外围边缘和第二外围边缘之间延伸，其中所述石墨烯层用于跨所述衬底沿着水平方向转移热能，且其中所述衬底的所述第二外围边缘经配置以将所述衬底结构性且电性地连接到系统衬底，其中所述石墨烯层经配置以通过所述第二外围边缘将所述热能转移到所述系统衬底；
在所述衬底上方安装半导体装置，其中安装包含经由一或多个热连接器将所述半导体装置热耦合到所述石墨烯层，所述一或多个热连接器(1)直接接触所述衬底的相对表面和所述半导体装置，且(2)经配置以在所述衬底与所述半导体装置之间转移热能；以及
将散热器附接到所述衬底的所述第一外围边缘，其中所述散热器直接附接到所述石墨烯层，所述散热器经配置以消散来自所述石墨烯层的所述热能。
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