CN112183738A - Demonstration system for simulating multiple discharge modes of neuron - Google Patents
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Abstract
The invention discloses a demonstration system for simulating multiple discharge modes of neurons, which comprises a neuron circuit, wherein the neuron circuit comprises a digital circuit module and an analog circuit module, the analog circuit module is controlled by the digital circuit module, the digital circuit module is used for inputting signals to the analog circuit module and running a steady-state plasticity rule, and the analog circuit module generates a membrane potential and a threshold voltage according to the input signals so as to realize the demonstration output of an action potential; or, according to the input signal, the input conductance of the analog circuit module is adjusted to realize the demonstration of the steady-state plasticity of the neuron circuit; or, according to the input signal, adjusting the leakage resistance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit; or, according to the input signal, the threshold voltage of the analog circuit module is adjusted to realize the demonstration of the steady-state plasticity of the neuron circuit. The invention can demonstrate various dynamic characteristics of neuron discharge and steady-state plasticity mechanism of neurons.
Description
Technical Field
The invention relates to the field of simulation of biological neurons, in particular to a demonstration system for simulating multiple discharge modes of neurons.
Background
The brain-like intelligence is machine intelligence which is inspired by cranial nerves and human cognitive behavior mechanisms by means of computational modeling and is realized by software and hardware in a cooperative manner. Compared with the traditional artificial intelligence system, the brain-like intelligent hardware system has the advantages of strong biological rationality, high processing speed and high parallelism degree, can meet the real-time requirement of the actual engineering application of embedded occasions, and has important theoretical and application values in researching and developing the brain-like intelligent hardware system.
The neuron is a structural unit and a functional unit which form a nervous system, and the realization of a neuron circuit is the basis for realizing a brain-like neural network. The biological neuron is a random dynamics unit with highly nonlinear characteristics, and a hardware demonstration system is used for reproducing a plurality of modes of action potential discharge of the biological neuron, so that the biological neuron has important application values in teaching, researching the electrophysiological characteristics and the dynamics characteristics of the biological neuron and understanding the biological principle behind brain-like calculation and artificial intelligence models.
Disclosure of Invention
In order to solve the problems, the invention provides a demonstration system for simulating multiple discharge modes of neurons, which can reproduce multiple modes of action potential discharge of biological neurons by using a hardware demonstration system.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a demonstration system for simulating multiple discharge modes of neurons comprises a neuron circuit, wherein the neuron circuit comprises a digital circuit module and an analog circuit module, the analog circuit module comprises a membrane characteristic unit, a depolarization unit, a pulse repolarization unit, a cluster discharge repolarization unit and an electrocardio repolarization unit, the analog circuit module is controlled by the digital circuit module, and the digital circuit module is used for inputting signals and running a steady-state plasticity rule to the analog circuit module and enabling the analog circuit module to generate membrane potential and threshold voltage according to the input signals so as to realize the demonstration output of action potential;
or, according to the input signal, adjusting the input conductance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, adjusting the leakage resistance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, generating or adjusting the threshold voltage of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit.
Optionally, the digital circuit module includes a microcontroller, a user control interface, and a display module, an output end of the user control interface is connected to an input end of the microcontroller, and an output end of the microcontroller is connected to an input end of the display module;
the microcontroller is connected with the digital-to-analog conversion module DA through the digital-to-analog conversion module DA1And the first voltage follower inputs a first voltage signal to the membrane characteristic unit, the microcontroller inputs a second voltage signal to the depolarization unit, the membrane characteristic unit generates a membrane potential according to the first voltage signal, and the depolarization unit generates a threshold voltage V of action potential discharge according to the second voltage signalth；
The pulse repolarization unit is connected with the microcontroller through an action potential output module and outputs an action potential signal generated by membrane voltage, and the pulse repolarization unit is also connected with an analog switch SWT2Said analog switch SWT2Controlled by the microcontroller and selectively connected with the cluster discharge repolarization unit or the electrocardio repolarization unit through the microcontroller.
Optionally, the film property unit comprises an input capacitance CinOperational amplifier, variable resistor Rvar1Membrane capacitor CmemAnd a variable resistor Rvar2Said input capacitance CinIs connected with the output end of the first voltage follower, and the input capacitor CinIs connected with the non-inverting input terminal of the operational amplifier, the variable resistor Rvar1Is connected to the inverting input terminal of the operational amplifier, the variable resistor Rvar1Is connected with the output end of the operational amplifier, and the output end of the operational amplifier is also connected with the membrane capacitor CmemAnd the variable resistor Rvar2One terminal of the film capacitor CmemAnd the variable resistor Rvar2Is grounded at the other end thereof, whichIn said input capacitor CinOperational amplifier and variable resistor Rvar1For converting the first voltage signal into a current signal to make the membrane capacitance CmemA membrane potential is generated at both ends of the variable resistor Rvar1And the variable resistor Rvar2Controlled by the microcontroller, the microcontroller is used for changing the variable resistor Rvar1And the variable resistor Rvar2The resistance value of (2).
Optionally, the depolarization unit includes a digital-to-analog conversion chip DA2A second voltage follower, a comparator, and an action potential amplitude voltage source VapAnd a depolarization resistance R1The second voltage signal passes through the digital-to-analog conversion chip DA2And a threshold voltage V at which the second voltage follower generates an action potential dischargethTo the non-inverting input of the comparator, the inverting input of the comparator and the membrane capacitance CmemIs connected to the output terminal of the comparator through an analog switch SWT1And the action potential amplitude voltage source VapIs connected with the positive pole of the action potential amplitude voltage source VapThe negative electrode of the analog switch SWT is grounded, and the analog switch SWT1And the depolarization resistor R1Is connected to one end of the depolarizing resistance R1And the other end of the same and the membrane capacitance CmemIs connected at one end.
Optionally, the pulse repolarization unit comprises a hyperpolarization voltage source VspTriode Q1Resistance R2Resistance R3And a capacitor C1Said triode Q1The base electrode of the resistor R is divided into two paths, the first path and the resistor R3Is connected to the second path and the capacitor C1Is connected to one end of the resistor R3And the other end of the same and the membrane capacitance CmemIs connected to the capacitor C1Is grounded, the other end of the triode Q is grounded1And said hyperpolarization voltage source VspThe negative pole of the hyperpolarised voltage source VspThe anode of the triode Q is grounded1Collector electrode of (2) and the resistor R2Is connected at one end toSaid resistance R2And the other end of the same and the membrane capacitance CmemIs connected to one end of the resistor R, wherein the resistor R is connected to the other end of the resistor R3One end of the analog switch is also connected with the action potential output module and the analog switch SWT2To the input terminal of (1).
Optionally, the action potential output module includes a third voltage follower and an analog-to-digital conversion chip AD1An input terminal of the third voltage follower and the resistor R3Is connected with the output end of the third voltage follower and the analog-to-digital conversion chip AD1Is connected with the input end of the analog-to-digital conversion chip AD1Is connected with the microcontroller.
Optionally, the cluster discharge repolarization unit includes a triode Q2Triode Q3Resistance R4Resistance R5And a capacitor C2Said triode Q2And the analog switch SWT2Is connected to an output terminal of the triode Q2Collector electrode of (2) and the resistor R4Is connected to one end of the resistor R4And the other end of the capacitor C2Is connected to the capacitor C2Is grounded, the other end of the triode Q is grounded2And the triode Q3Is connected with the collector of the triode Q3The base electrode of the resistor R is divided into two paths, the first path and the resistor R4Is connected with the other end of the capacitor C, and the second path is connected with the capacitor C2Is connected to the triode Q3And the resistor R5Is connected to one end of the resistor R5And the other end of the same is grounded.
Optionally, the electrocardiographic repolarization unit includes a triode Q4Triode Q5Triode Q6Resistance R6Resistance R7And a capacitor C3Said triode Q4And the analog switch SWT2Is connected to an output terminal of the triode Q4Base electrode of and the triode Q5Said triode Q4Collector of and the triode Q6Collector electrode connection ofSaid triode Q5Base electrode of and the resistor R6Is connected to the triode Q5Collector electrode of (2) and the resistor R7Is connected to one end of the resistor R6And the resistance R7And the other end of the capacitor C3Is connected to the capacitor C3Is grounded, the other end of the triode Q is grounded6The base electrode of the resistor R is divided into three paths, the first path and the resistor R6Is connected with the other end of the resistor R, and the second path is connected with the resistor R7Is connected with the other end of the third path, and the third path is connected with the capacitor C3Is connected to the triode Q6The emitter of (2) is grounded.
Compared with the prior art, the invention has the technical progress that:
the invention provides a demonstration system for simulating multiple discharge modes of neurons, wherein an input signal can be input from the outside or programmed according to a user interface, and three discharge modes of pulse discharge, cluster discharge and myocardial discharge are demonstrated, multiple parameters of each discharge mode can be adjusted, the change of parameters is utilized, the change condition of action potential waveform along with the change of parameters is displayed through a display interface, and then multiple dynamic characteristics of neuron discharge can be demonstrated, and meanwhile, the steady-state plasticity mechanism of a neuron circuit can be demonstrated through adjusting threshold voltage, input conductance and leakage resistance.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
In the drawings:
fig. 1 is a schematic diagram of the present invention.
FIG. 2 is a schematic diagram of an operating pulse waveform output by the neuron circuit according to the present invention.
FIG. 3 is a schematic diagram of a cluster discharge waveform output by the neuron circuit of the present invention.
FIG. 4 is a schematic diagram of the myocardial discharge waveform output by the neuron circuit of the present invention.
FIG. 5 is a flowchart of the steady-state plasticity adjustment process of the invention.
Detailed Description
The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.
As shown in fig. 1, the present invention discloses a system for demonstrating multiple discharge modes of a simulated neuron, which comprises a neuron circuit, wherein the neuron circuit comprises a digital circuit module and an analog circuit module, the analog circuit module comprises a membrane characteristic unit, a depolarization unit, a pulse repolarization unit, a cluster discharge repolarization unit and an electrocardio repolarization unit, the analog circuit module is controlled by the digital circuit module, and the digital circuit module is used for inputting a signal and running a steady-state plasticity rule to the analog circuit module, and enabling the analog circuit module to generate a membrane potential and a threshold voltage according to the input signal, so as to realize the demonstration output of an action potential;
or, according to the input signal, the input conductance of the analog circuit module is adjusted to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, adjusting the leakage resistance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, generating or adjusting the threshold voltage of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit.
Wherein the invention is directed to a capacitor (i.e., the film capacitor C of the invention)mem) Performing charge or discharge to simulate the discharge of neuronal cells, and applying a voltage to the membrane capacitor CmemThe membrane potential generated at the two ends is the potential difference at the two sides of the neuron cell membrane; the potential difference between two sides of neuron cell membrane can be over a threshold value, and can produce action potentialthSpecifically, in the present invention, three neuron discharge modes of pulse discharge, cluster discharge and myocardial discharge are demonstrated, specifically as follows:
in the present invention, the digital circuitThe module includes microcontroller, user control interface and display module, and user control interface's output is connected with microcontroller's input, and microcontroller's output is connected with display module's input, and wherein, microcontroller can be ARM or singlechip etc. microcontroller receives user transmission graphical interface operating instruction or programming instruction through user control interface, input signal promptly, and wherein, microcontroller's input signal includes: first voltage signal, second voltage signal, signal for adjusting input conductance, signal for adjusting leakage resistance, and adjusting threshold voltage VthAnd the microcontroller is also used for receiving the action potential signal output by the analog circuit.
Wherein, the microcontroller passes the digital-to-analog conversion module DA1And the first voltage follower inputs the first voltage signal to the membrane characteristic unit and passes through the digital-to-analog conversion module DA2And the second voltage follower inputs the second voltage signal to the depolarization unit, the membrane characteristic unit generates a membrane potential according to the first voltage signal, and the depolarization unit generates a threshold voltage V according to the second voltage signalth。
Wherein, the pulse repolarization unit is connected with the microcontroller through the action potential output module, outputs the action potential signal generated by the membrane voltage, and is also connected with the analog switch SWT2Analog switch SWT2Is controlled by a microcontroller and is selectively connected with the cluster discharge repolarization unit or the electrocardio repolarization unit through the microcontroller.
Specifically, in the present invention, the film characteristic unit includes an input capacitance CinOperational amplifier, variable resistor Rvar1Membrane capacitor CmemAnd a variable resistor Rvar2Input capacitance CinIs connected with the output end of the first voltage follower, and an input capacitor CinThe other end of the resistor is connected with the non-inverting input end of the operational amplifier, and the variable resistor Rvar1Is connected with the inverting input terminal of the operational amplifier, and a variable resistor Rvar1The other end of the first and second switches is connected with the output end of the operational amplifier, and the output end of the operational amplifier is also connected with a membrane capacitor CmemAnd a variable resistor Rvar2ToTerminal, membrane capacitance CmemAnd a variable resistor Rvar2Is grounded, wherein an input capacitor CinOperational amplifier and variable resistor Rvar1For converting the first voltage signal into a current signal to make the film capacitor CmemA variable resistance R with a membrane potential generated at both endsvar1And a variable resistor Rvar2Controlled by a microcontroller for varying the variable resistance Rvar1And a variable resistor Rvar2The resistance value of (2).
After the first voltage signal is converted into a current signal, a part of the current signal flows into the membrane capacitor CmemInduce a film capacitance CmemThe increase of the voltage at both ends generates the membrane voltage, and the other part passes through the variable resistor Rvar2Leaking to an analog ground potential, and a film capacitor C when no signal is inputmemThe internal charge can likewise be passed through the variable resistor Rvar2And (4) leakage. Wherein, the variable resistor Rvar1And a variable resistor Rvar2The resistance values of the two are all controlled by the microcontroller.
The depolarization unit comprises a digital-to-analog conversion chip DA2A second voltage follower, a comparator, and an action potential amplitude voltage source VapAnd a depolarization resistance R1The microcontroller is connected with the digital-to-analog conversion chip DA through a digital-to-analog conversion chip DA2And a threshold voltage V at which the second voltage follower generates an action potential dischargethTo the non-inverting input of the comparator, the inverting input of the comparator and the membrane capacitance CmemIs connected to the output terminal of the comparator through an analog switch SWT1And action potential amplitude voltage source VapIs connected with the positive pole of the action potential amplitude voltage source VapIs grounded, and an analog switch SWT1Output terminal and depolarization resistor R1Is connected to a depolarizing resistance R1The other end of (C) and a membrane capacitance CmemIs connected at one end.
The microcontroller is connected with the digital-to-analog conversion chip DA through the digital-to-analog conversion chip DA2And a threshold voltage V at which the second voltage follower generates an action potential dischargethTo the non-inverting input of the comparator, threshold voltage VthControlled by the microcontroller, the comparator compares the membrane capacitance CmemMembrane potential and threshold potential generated abovePressure VthWhen the membrane potential is higher than the threshold voltage VthWhen the comparator outputs high level to trigger the analog switch SWT1Closed, action potential amplitude voltage source VapBy depolarisation of resistance R1Is a film capacitance CmemCharging to make the membrane capacitance CmemThe voltage on is raised to an action potential amplitude Vap。
The pulse repolarization unit comprises a hyperpolarization voltage source VspTriode Q1Resistance R2Resistance R3And a capacitor C1Triode Q1The base electrode of the resistor is divided into two paths, the first path is connected with a resistor R3Is connected with one end of the capacitor C, and the second path is connected with the capacitor C1Is connected to a resistor R3The other end of (C) and a membrane capacitance CmemIs connected to a capacitor C1The other end of the transistor Q is grounded1Emitter and hyperpolarization voltage source VspIs connected to a hyperpolarised voltage source VspThe anode of the triode Q is grounded1Collector and resistor R2Is connected to a resistor R2The other end of (C) and a membrane capacitance CmemIs connected at one end, wherein, the resistor R3One end of the switch is also sequentially connected with an action potential output module and an analog switch SWT2To the input terminal of (1).
When the depolarization unit is the membrane capacitance CmemWhen charging, the same will pass through the resistor R3To the capacitor C1Slow charging, capacitor C1The voltage rises slowly when it is greater than the transistor Q1At the turn-on voltage of the base, the capacitor C1Charge of the transistor Q1Base-emitter bleeder, triode Q1Collector-emitter current increases rapidly, film capacitance CmemThrough a resistance R2And a triode Q1To hyperpolarised voltage source VspThe negative electrode of (2) is rapidly discharged, and the membrane capacitance CmemIs rapidly decreased below a threshold voltage VthTime, analog switch SWT1And (5) disconnecting. At this time, the capacitance C1Is still higher than the transistor Q1Base turn-on voltage, film capacitance CmemContinues to drop until the magnitude V of the hyperpolarized voltage sourcespWhen the capacitance C is1Is lower than the voltage of the triode Q1When the base of the transistor is turned on, the triode Q1Collector-emitter current turn-off, film capacitance CmemTo reach a stable state, thereby completing a generation process of an action potential pulse.
The action potential pulse signal is output to the microcontroller through an action potential output module, wherein the action potential output module comprises a third voltage follower and an analog-to-digital conversion chip AD1Input terminal of the third voltage follower and resistor R3Is connected to receive the generated action potential pulse signal, and the output end of the third voltage follower is connected with the analog-to-digital conversion chip AD1Is connected with the input end of the analog-to-digital conversion chip AD1The output end of the neuron is connected with a microcontroller, the microcontroller outputs action pulse waveforms through a display module, and a schematic diagram of the action pulse waveforms output by the neuron circuit is shown in fig. 2.
The cluster discharge repolarization unit comprises a triode Q2Triode Q3Resistance R4Resistance R5And a capacitor C2Triode Q2Base and analog switch SWT2Is connected to an output terminal of a triode Q2Collector and resistor R4Is connected to a resistor R4Another terminal of (1) and a capacitor C2Is connected to a capacitor C2The other end of the transistor Q is grounded2Emitter of and triode Q3Is connected to the collector of a triode Q3The base electrode of the resistor is divided into two paths, the first path is connected with a resistor R4Is connected with the other end of the capacitor C, and the second path is connected with the capacitor C2Is connected to a transistor Q3Emitter and resistor R of5Is connected to a resistor R5And the other end of the same is grounded.
Microcontroller controlled analog switch SWT2Communicating a cluster discharge repolarization unit to a membrane capacitance CmemThe depolarization unit is membrane capacitance CmemDuring charging, the charging is also carried out through a triode Q2The base electrode injects current to the emitter electrode and the collector electrode, and the triode Q2Collector current passing resistance R4To the capacitor C2Charging to raise its voltage to be higher than that of transistor Q3When the base of the transistor is turned on, the triode Q3The collector-emitter current of the transistor is rapidly increased, thereby enabling the transistor Q2Can pass base-emitter current through the triode Q3Collector-emitter and resistor R5Fast draining to analog ground, resulting in a membrane capacitance CmemThere is a certain drop in voltage. At this time, the capacitance C2The charge of the transistor Q is also passed through2Collector-emitter, triode Q3Collector-emitter, and resistor R5At a faster rate of discharge at the membrane capacitance CmemHas not yet fallen below the threshold voltage VthTime, capacitance C2Has dropped to the triode Q3Below the base turn-on voltage, a triode Q3The current between the collector and the emitter is cut off, one discharge pulse process in the cluster discharge is finished, and the depolarization unit continues to be the membrane capacitor CmemCharging, repeating the above steps for several times, and obtaining the membrane capacitor C as the pulse repolarization unitmemDuring discharging, a cluster discharging process is completed. The discharge pulse of the cluster discharge is output to the microcontroller through the action potential output module and is output through the display module, and the schematic diagram of the cluster discharge waveform output by the neuron circuit is shown in fig. 3.
The electrocardio-repolarization unit comprises a triode Q4Triode Q5Triode Q6Resistance R6Resistance R7And a capacitor C3Triode Q4Emitter and analog switch SWT2Is connected to an output terminal of a triode Q4Base and triode Q5Is connected to the emitter of the transistor Q4Collector and triode Q6Is connected to the collector of a triode Q5Base and resistor R of6Is connected to a transistor Q5Collector and resistor R7Is connected to a resistor R6And a resistance R7Another terminal of (1) and a capacitor C3Is connected to a capacitor C3The other end of the transistor Q is grounded6The base electrode of the resistor is divided into three paths, the first path is connected with a resistor R6Is connected to the other end of the first circuit, the second circuit is connected to the power supplyResistance R7Is connected with the other end of the third path and the capacitor C3Is connected to a transistor Q6The emitter of (2) is grounded.
Microcontroller controlled analog switch SWT2Communicating the electrocardio-repolarization unit to the membrane capacitor CmemThe depolarization unit is membrane capacitance CmemCharging, also via a triode Q4And a triode Q5Is injected with current through the emitter-base of the resistor R6And a resistance R7Is a capacitor C3Charging to raise its voltage to be higher than that of transistor Q6At base turn-on voltage, capacitor C3Charge of the transistor Q6Base-emitter bleeder, triode Q6So that the collector-emitter current is rapidly increased, thereby enabling the transistor Q4Can pass through the triode Q6Collector-emitter fast dump to analog ground resulting in film capacitance CmemThe voltage of the transistor has a certain reduction, and the voltage reduction amount is controlled by a triode Q4And a triode Q5Is determined and maintained when the pulse repolarization unit is a film capacitor CmemWhen discharging, a myocardial discharge process is completed. The discharge pulse of the myocardial discharge is output to the microcontroller through the action potential output module and is output through the display module, and the schematic diagram of the myocardial discharge waveform output by the neuron circuit is shown in fig. 4.
Each neuron has its own firing frequency, and if the frequency of the neuron's output action potential (i.e. neuron excitation rate) exceeds the neuron's own firing frequency, the neuron will adjust the neuron excitation rate to the own firing frequency through steady-state plasticity adjustment, and vice versa, and when the firing frequency of the neuron equals the own firing frequency, we consider the neuron to reach firing rate homeostasis.
The invention realizes the adjustment of the inherent discharge frequency by the following two aspects, namely, the demonstration of the steady-state plasticity by the following two aspects: firstly, the sensitivity (namely input conductance and leakage resistance) of the cell membrane of the neuron is regulated to change the discharge frequency of the neuron, and finally, the excitation frequency of the neuron reaches the inherent discharge frequency;
secondly, if the first voltage signal inputted from the outside is greater than the threshold voltage V for a long timethThreshold voltage V of neuronthWill increase such that the excitation rate of the neuron decreases, and conversely, if the externally input first voltage signal fails to reach the threshold voltage V of the neuron for a long timethThreshold voltage V of neuronthWill be reduced.
Specifically, a steady-state plasticity rule is operated in the microcontroller, and the steady-state plasticity rule specifies the inherent discharge frequency f of the neuron0And steady state regulation time tsWherein the steady state control time tsThe neuron circuit adjusts the frequency of the output action potential to the natural discharge frequency f0The microcontroller monitors the frequency of the action potential output by the neuron in real time as the required time, records the frequency as the discharge frequency f, and when the monitored frequency f is not equal to the inherent discharge frequency f of the neuron0The timing is started, and the timing time is represented by t. When the timing time t is less than the steady-state regulation time tsIf the instantaneous firing frequency f is greater than the natural firing frequency f of the neuron0The microcontroller decreases the input conductance (i.e., increases the variable resistance R)var1Resistance value of) and leakage resistance (i.e., reducing the variable resistance R)var2Resistance value of) to achieve the adjustment of the discharge frequency of the neuron if the discharge frequency f of the neuron reaches and remains at the natural discharge frequency f0If yes, ending the steady state regulation; conversely, if the instantaneous firing frequency f is less than the natural frequency f of the neuron0By increasing the input conductance (i.e. decreasing the variable resistance R)var1Resistance value of) and leakage resistance (i.e., increasing the variable resistance R)var2Resistance value of) to achieve the adjustment of the discharge frequency of the neuron if the discharge frequency f of the neuron reaches and remains at the natural discharge frequency f0Then the steady state adjustment is ended.
It should be noted that the rate of change of the adjustment of the resistance value can be varied exponentially or alternatively linearly.
After the adjustment of the input conductance and the leakage resistance, the instantaneous discharge frequency f of the neuron is still not equal to or guaranteedAt a natural frequency f0I.e. the timing time t is greater than the steady-state regulation time tsAt this time, the instantaneous discharge frequency f and the natural frequency f are continuously compared0If the instantaneous discharge frequency f is greater than the natural frequency f0Then, the discharge threshold voltage V is increasedthUntil the firing frequency f of the neuron reaches and remains at the natural firing frequency f0(ii) a Conversely, if the instantaneous discharge frequency f is less than the natural frequency f0Then the discharge threshold voltage V is reducedthUntil the firing frequency f of the neuron reaches and remains at the natural firing frequency f0The adjustment flow chart is shown in fig. 5.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. A demonstration system for simulating multiple discharge modes of neurons is characterized by comprising a neuron circuit, wherein the neuron circuit comprises a digital circuit module and an analog circuit module, the analog circuit module comprises a membrane characteristic unit, a depolarization unit, a pulse repolarization unit, a cluster discharge repolarization unit and an electrocardio repolarization unit, the analog circuit module is controlled by the digital circuit module, and the digital circuit module is used for inputting signals and running a steady-state plasticity rule to the analog circuit module, enabling the analog circuit module to generate membrane potential and threshold voltage according to the input signals and realizing the demonstration output of action potential;
or, according to the input signal, adjusting the input conductance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, adjusting the leakage resistance of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit;
or, according to the input signal, adjusting the threshold voltage of the analog circuit module to realize the demonstration of the steady-state plasticity of the neuron circuit.
2. The demonstration system for simulating a plurality of firing patterns of neurons according to claim 1, wherein: the digital circuit module comprises a microcontroller, a user control interface and a display module, wherein the output end of the user control interface is connected with the input end of the microcontroller, and the output end of the microcontroller is connected with the input end of the display module;
the microcontroller is connected with the digital-to-analog conversion module DA through the digital-to-analog conversion module DA1And the first voltage follower inputs a first voltage signal to the membrane characteristic unit, the microcontroller inputs a second voltage signal to the depolarization unit, the membrane characteristic unit generates a membrane potential according to the first voltage signal, and the depolarization unit generates a threshold voltage V of action potential discharge according to the second voltage signalth；
The pulse repolarization unit is connected with the microcontroller through an action potential output module and outputs an action potential signal generated by membrane voltage, and the pulse repolarization unit is also connected with an analog switch SWT2Said analog switch SWT2Controlled by the microcontroller and selectively connected with the cluster discharge repolarization unit or the electrocardio repolarization unit through the microcontroller.
3. The demonstration system for simulating a plurality of firing patterns of neurons according to claim 2, wherein: the film characteristic unit comprises an input capacitance CinOperational amplifier, variable resistor Rvar1Membrane capacitor CmemAnd a variable resistor Rvar2Said input capacitance CinIs connected with the output end of the first voltage follower, and the input capacitor CinIs connected with the non-inverting input terminal of the operational amplifier, the variable resistor Rvar1Is connected to the inverting input terminal of the operational amplifier, the variable resistor Rvar1Is connected with the output end of the operational amplifier, and the output end of the operational amplifier is also connected with the membrane capacitor CmemAnd the variable resistor Rvar2One terminal of the film capacitor CmemAnd the variable resistor Rvar2Is grounded, wherein the input capacitance C is connected to the groundinOperational amplifier and variable resistor Rvar1For converting the first voltage signal into a current signal to make the membrane capacitance CmemA membrane potential is generated at both ends of the variable resistor Rvar1And the variable resistor Rvar2Controlled by the microcontroller, the microcontroller is used for changing the variable resistor Rvar1And the variable resistor Rvar2The resistance value of (2).
4. The demonstration system for simulating a plurality of firing patterns of neurons according to claim 3, wherein: the depolarization unit comprises a digital-to-analog conversion chip DA2A second voltage follower, a comparator, and an action potential amplitude voltage source VapAnd a depolarization resistance R1The second voltage signal passes through the digital-to-analog conversion chip DA2And a threshold voltage V at which the second voltage follower generates an action potential dischargethTo the non-inverting input of the comparator, the inverting input of the comparator and the membrane capacitance CmemIs connected to the output terminal of the comparator through an analog switch SWT1And the action potential amplitude voltage source VapIs connected with the positive pole of the action potential amplitude voltage source VapThe negative electrode of the analog switch SWT is grounded, and the analog switch SWT1And the depolarization resistor R1Is connected to one end of the depolarizing resistance R1And the other end of the same and the membrane capacitance CmemIs connected at one end.
5. The demonstration system for simulating a plurality of firing patterns of neurons according to claim 4, wherein: the pulse repolarization unit comprises a hyperpolarization electrodeVoltage source VspTriode Q1Resistance R2Resistance R3And a capacitor C1Said triode Q1The base electrode of the resistor R is divided into two paths, the first path and the resistor R3Is connected to the second path and the capacitor C1Is connected to one end of the resistor R3And the other end of the same and the membrane capacitance CmemIs connected to the capacitor C1Is grounded, the other end of the triode Q is grounded1And said hyperpolarization voltage source VspThe negative pole of the hyperpolarised voltage source VspThe anode of the triode Q is grounded1Collector electrode of (2) and the resistor R2Is connected to one end of the resistor R2And the other end of the same and the membrane capacitance CmemIs connected to one end of the resistor R, wherein the resistor R is connected to the other end of the resistor R3One end of the analog switch is also connected with the action potential output module and the analog switch SWT2To the input terminal of (1).
6. The demonstration system for simulating a plurality of firing patterns of neurons according to claim 5, wherein: the action potential output module comprises a third voltage follower and an analog-to-digital conversion chip AD1An input terminal of the third voltage follower and the resistor R3Is connected with the output end of the third voltage follower and the analog-to-digital conversion chip AD1Is connected with the input end of the analog-to-digital conversion chip AD1Is connected with the microcontroller.
7. The demonstration system for simulating a plurality of firing patterns for a neuron according to claim 6, wherein: the cluster discharge repolarization unit comprises a triode Q2Triode Q3Resistance R4Resistance R5And a capacitor C2Said triode Q2And the analog switch SWT2Is connected to an output terminal of the triode Q2Collector electrode of (2) and the resistor R4Is connected to one end of the resistor R4And the other end of the capacitor C2Is connected at one end thereof withContainer C2Is grounded, the other end of the triode Q is grounded2And the triode Q3Is connected with the collector of the triode Q3The base electrode of the resistor R is divided into two paths, the first path and the resistor R4Is connected with the other end of the capacitor C, and the second path is connected with the capacitor C2Is connected to the triode Q3And the resistor R5Is connected to one end of the resistor R5And the other end of the same is grounded.
8. The demonstration system for simulating a plurality of firing patterns for a neuron according to claim 7, wherein: the electrocardio-repolarization unit comprises a triode Q4Triode Q5Triode Q6Resistance R6Resistance R7And a capacitor C3Said triode Q4And the analog switch SWT2Is connected to an output terminal of the triode Q4Base electrode of and the triode Q5Said triode Q4Collector of and the triode Q6Is connected with the collector of the triode Q5Base electrode of and the resistor R6Is connected to the triode Q5Collector electrode of (2) and the resistor R7Is connected to one end of the resistor R6And the resistance R7And the other end of the capacitor C3Is connected to the capacitor C3Is grounded, the other end of the triode Q is grounded6The base electrode of the resistor R is divided into three paths, the first path and the resistor R6Is connected with the other end of the resistor R, and the second path is connected with the resistor R7Is connected with the other end of the third path, and the third path is connected with the capacitor C3Is connected to the triode Q6The emitter of (2) is grounded.
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| CN107742153A (en) * | 2017-10-20 | 2018-02-27 | 华中科技大学 | A kind of neuron circuit with stable state plasticity based on memristor |
| US20190130258A1 (en) * | 2016-04-11 | 2019-05-02 | Universite De Lille | Artificial neuron |
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| US20190130258A1 (en) * | 2016-04-11 | 2019-05-02 | Universite De Lille | Artificial neuron |
| CN107742153A (en) * | 2017-10-20 | 2018-02-27 | 华中科技大学 | A kind of neuron circuit with stable state plasticity based on memristor |
| CN109714119A (en) * | 2018-12-29 | 2019-05-03 | 中国人民解放军陆军工程大学 | Neuromorphic circuit and signal frequency shift detection system |
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