CN112151666B - Display substrate, preparation method thereof and display device - Google Patents

Display substrate, preparation method thereof and display device Download PDF

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Publication number
CN112151666B
CN112151666B CN202011045327.2A CN202011045327A CN112151666B CN 112151666 B CN112151666 B CN 112151666B CN 202011045327 A CN202011045327 A CN 202011045327A CN 112151666 B CN112151666 B CN 112151666B
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wall
sub
flow guide
heat dissipation
electrode
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CN112151666A (en
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赵德江
黄维
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The patent refers to the field of 'semiconductor devices and electric solid state devices'. The display substrate includes: the substrate comprises a substrate base plate, and a heat radiation structure layer and a pixel unit which are arranged on the substrate base plate, wherein the heat radiation structure layer comprises a flow guide channel, a liquid storage tank and cooling liquid, the display base plate comprises a display area and a peripheral area which is positioned at the periphery of the display area, the pixel unit is positioned in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is positioned in the peripheral area and is communicated with the flow guide channel, and the cooling liquid is filled in the flow guide channel and the liquid storage tank. This paper is through setting up heat radiation structure layer, and heat radiation structure layer's water conservancy diversion passageway encircles the pixel unit, and the pixel unit can be cooled off to the coolant liquid in the water conservancy diversion passageway, compares in the heat dissipation mode of conducting strip, and this mode has higher heat conduction efficiency, can reduce the temperature in display area, and then has promoted the life of pixel unit.

Description

Display substrate, preparation method thereof and display device
Technical Field
The present disclosure relates to but not limited to the field of display technologies, and more particularly, to a display substrate, a method for manufacturing the same, and a display device.
Background
The combination of a photo-Quantum Dot (QD) luminescent material plus a Micro LED is a very desirable Quantum Dot display structure, which can provide excellent brightness and color gamut. At present, because Micro LEDs generate a large amount of heat in the using process, if the heat cannot be diffused in time, the temperature of the QD luminescent material will rise, the service life of the QD luminescent material will be reduced, and failure will be seriously caused. Although the above problems can be partially alleviated by the heat conducting structure such as the metal strip, the heat conducting effect is poor due to the fixed heat conducting position.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the disclosure provides a display substrate, a preparation method thereof and a display device, which can effectively reduce the temperature of a display area of the display substrate.
An exemplary embodiment of the present disclosure provides a display substrate including: the substrate comprises a substrate base plate, and a heat radiation structure layer and a pixel unit which are arranged on the substrate base plate, wherein the heat radiation structure layer comprises a flow guide channel, a liquid storage tank and cooling liquid, the display base plate comprises a display area and a peripheral area which is positioned at the periphery of the display area, the pixel unit is positioned in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is positioned in the peripheral area and is communicated with the flow guide channel, and the cooling liquid is filled in the flow guide channel and the liquid storage tank.
In some exemplary embodiments, the heat-dissipating structure layer includes a plurality of heat-dissipating regions extending along a first direction and arranged along a second direction, at least one of the heat-dissipating regions includes a plurality of heat-dissipating units arranged along the first direction and a first flow-guiding wall extending along the first direction, the heat-dissipating units are located in the display region, the heat-dissipating units include a first wall and a second wall, the first wall surrounds a pixel opening, the second wall surrounds an outer side of the first wall and has an end portion spaced to form a flow-passing opening, the first flow-guiding wall is opposite to the flow-passing opening, the flow-guiding channel includes a first flow-guiding channel formed between the first wall and the second wall and a second flow-guiding channel formed between the plurality of heat-dissipating units and the first flow-guiding wall of the display region, the first flow-guiding channel and the second flow-guiding channel are communicated through the flow-passing opening, the second flow-guiding channel is communicated with the reservoir, the pixel unit is located in the pixel opening, wherein the first direction intersects the second direction.
In some exemplary embodiments, the heat dissipation unit further includes a first driving electrode disposed in the first wall and a second driving electrode disposed in the second wall, and the first driving electrode and the second driving electrode are configured to drive the first wall and/or the second wall to press the first flow guiding channel after opposite voltages are applied.
In some exemplary embodiments, the first driving electrode includes a plurality of sub driving electrodes disposed along a circumference of the first wall, the plurality of sub driving electrodes being configured to be sequentially applied with a voltage in a clockwise or counterclockwise direction.
In some exemplary embodiments, the first wall includes a first sub-wall and a second sub-wall extending along the first direction and spaced apart along the second direction, and a third sub-wall and a fourth sub-wall extending along the second direction and spaced apart along the first direction, the first sub-wall, the second sub-wall, the third sub-wall, and the fourth sub-wall define a pixel opening, the second wall is disposed outside the second sub-wall, the third sub-wall, and the fourth sub-wall, the first sub-wall is adjacent to the first flow guiding wall, the plurality of sub-driving electrodes include a first sub-driving electrode disposed in the third sub-wall, a second sub-driving electrode disposed in the second sub-wall, and a third sub-driving electrode disposed in the fourth sub-wall, the first sub-driving electrodes of the plurality of heat dissipation units in the same heat dissipation area are led out to the first connection end of the peripheral area through the lead wires, and the second sub-driving electrodes of the plurality of heat dissipation units are led out to the second connection end of the peripheral area through the lead wires, and the third sub-driving electrodes of the plurality of radiating units are led out to the third connecting end of the peripheral area through the lead.
In some exemplary embodiments, the side of the first surrounding wall facing the second surrounding wall and/or the side of the second surrounding wall facing the first surrounding wall are provided with a plurality of pressing protrusions at intervals.
In some exemplary embodiments, a third driving electrode is disposed inside the first surrounding wall adjacent to one side of the first guide wall, a fourth driving electrode extending along the first direction is disposed inside the first guide wall, and the fourth driving electrode and the third driving electrode are configured to be driven by an opposite voltage to drive the first guide wall and/or the first surrounding wall to press the second guide channel, so that the cooling liquid in the second guide channel flows to the reservoir.
In some exemplary embodiments, the fourth driving electrode includes a plurality of fourth sub driving electrodes spaced apart along the first direction, the fourth sub driving electrodes are in one-to-one correspondence with the third driving electrodes, the display substrate further includes thin film transistors in one-to-one correspondence with the fourth sub driving electrodes, driving scan connection lines, and driving power lines for supplying power to the plurality of fourth sub driving electrodes, the thin film transistors include control electrodes, first electrodes, and second electrodes, the control electrodes are connected with the corresponding driving scan connection lines, the second electrodes are connected with the corresponding fourth sub driving electrodes, and the first electrodes of the thin film transistors in the same heat dissipation area are connected with the driving power lines.
In some exemplary embodiments, the first flow guiding wall is provided with a plurality of pressurizing protrusions facing the first surrounding wall, and the plurality of pressurizing protrusions are arranged at intervals along the first direction and correspond to the fourth sub driving electrodes one to one.
In some exemplary embodiments, the heat dissipation area further includes a second flow guide wall, the second flow guide wall is located in the peripheral region and is disposed on a second peripheral wall adjacent to the liquid storage tank, a connection channel for communicating the second flow guide channel and the liquid storage tank is formed between the second flow guide wall and the first flow guide wall in the peripheral region, the first flow guide wall is provided with a first sealing structure, the second flow guide wall is provided with a second sealing structure, and the first sealing structure and the second sealing structure are configured to be attached to each other under driving of opposite voltages to seal the connection channel.
In some exemplary embodiments, the peripheral region includes a first peripheral region and a second peripheral region disposed along the first direction, the first peripheral region is located at a first side of the display region, the second peripheral region is located at a second side of the display region opposite to the first side, the reservoir includes a first reservoir located at the first peripheral region and a second reservoir located at the second peripheral region, the connection channel includes a first connection channel communicated with the first reservoir and a second connection channel communicated with the second reservoir, and the first and second connection channels are each provided with a first and second enclosing structure therein.
In some exemplary embodiments, the display substrate further includes a metal heat dissipation layer disposed on the substrate and located in the peripheral region, and an orthogonal projection of the metal heat dissipation layer on the substrate covers an orthogonal projection of the liquid storage tank on the substrate.
In some exemplary embodiments, the display substrate further includes a cover plate and a leakage-proof plug disposed on a side of the cover plate facing the heat dissipation structure layer, an opening exposing the diversion channel and the liquid storage tank is disposed on a side of the heat dissipation structure layer facing the cover plate, and the leakage-proof plug seals the opening.
The display device provided by the embodiment of the disclosure comprises the display substrate provided by the embodiment of the disclosure.
The preparation method of the display substrate provided by the embodiment of the disclosure comprises the following steps:
forming a heat radiation structure layer and a pixel unit on a substrate;
the heat dissipation structure layer comprises a flow guide channel, a liquid storage tank and cooling liquid, the display substrate comprises a display area and a peripheral area located on the periphery of the display area, the pixel unit is located in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is located in the peripheral area and communicated with the flow guide channel, and the cooling liquid is filled in the flow guide channel and the liquid storage tank.
The embodiment of the disclosure provides a display substrate, a manufacturing method thereof and a display device, wherein a heat dissipation structure layer is arranged, a flow guide channel of the heat dissipation structure layer surrounds a pixel unit, cooling liquid in the flow guide channel can cool the pixel unit, and compared with a heat dissipation mode of a heat conducting fin, the mode has higher heat conduction efficiency, the temperature of a display area can be reduced, and the service life of the pixel unit is prolonged.
Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. The objectives and other advantages of the disclosure may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Other aspects will be apparent upon reading and understanding the attached drawings and detailed description.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosed embodiments and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the example serve to explain the principles of the disclosure and not to limit the disclosure.
FIG. 1a is a plan view of a display substrate according to an exemplary embodiment of the present disclosure;
FIG. 1b is a cross-sectional view taken at the location A-A in FIG. 1 a;
FIG. 1c is an equivalent circuit diagram of a pixel cell driving circuit according to an exemplary embodiment of the present disclosure;
FIG. 1d is a cross-sectional view of the heat dissipating structure layer at the position B-B in FIG. 1 a;
FIG. 1e is another cross-sectional view taken at the location A-A in FIG. 1 a;
FIG. 1f is another cross-sectional view of the heat dissipating structure layer at the position B-B in FIG. 1 a;
FIG. 2 is a partial cross-sectional view of a substrate shown in an exemplary embodiment of the present disclosure parallel to a substrate base direction;
FIG. 3 is a schematic diagram of the operation of a heat dissipation unit in accordance with an exemplary embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating the operation of a second fluid directing passage being squeezed in accordance with an exemplary embodiment of the present disclosure;
FIG. 5 is an equivalent circuit diagram of the working principle of the fourth sub-driving electrode according to the exemplary embodiment of the disclosure;
FIG. 6 is an enlarged view of the position A in FIG. 1 a;
FIG. 7 is a schematic diagram of the operation of a first enclosure and a second enclosure according to an exemplary embodiment of the present disclosure;
FIG. 8a is a schematic plan view of another display substrate according to an exemplary embodiment of the disclosure;
FIG. 8b is a cross-sectional view of a metal heat sink layer according to an exemplary embodiment of the present disclosure;
FIG. 8c is a diagram of via layout on a substrate base plate according to an exemplary embodiment of the present disclosure;
FIG. 9 is a block diagram of a metal heat sink layer after formation in an exemplary embodiment of the present disclosure;
FIG. 10 is a block diagram of an exemplary embodiment of the present disclosure after forming a light emitting diode;
FIG. 11 is a block diagram of a first protective layer after formation of an exemplary embodiment of the present disclosure;
FIG. 12 is a block diagram of an exemplary embodiment of the present disclosure after forming a driving electrode;
fig. 13 is a structural diagram after a pixel definition layer is formed according to an exemplary embodiment of the present disclosure;
FIG. 14 is a block diagram after formation of a quantum dot layer in accordance with an exemplary embodiment of the present disclosure;
FIG. 15 is a block diagram illustrating the formation of a second protective layer in accordance with an exemplary embodiment of the present disclosure;
fig. 16 is a structural view of an exemplary embodiment of the present disclosure after being filled with a cooling liquid.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that, in the present disclosure, the embodiments and features of the embodiments may be arbitrarily combined with each other without conflict.
In the drawings, the size of each component, the thickness of layers, or regions may be exaggerated for clarity. Therefore, one aspect of the present disclosure is not necessarily limited to the dimensions, and the shapes and sizes of the respective components in the drawings do not reflect a true scale. Further, the drawings schematically show ideal examples, and one embodiment of the present disclosure is not limited to the shapes, numerical values, and the like shown in the drawings.
The ordinal numbers such as "first", "second", "third", and the like in the present specification are provided for avoiding confusion among the constituent elements, and are not limited in number.
In this specification, for convenience, words such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicating orientations or positional relationships are used to explain positional relationships of constituent elements with reference to the drawings, only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present disclosure. The positional relationship of the components is changed as appropriate in accordance with the direction in which each component is described. Therefore, the words described in the specification are not limited to the words described in the specification, and may be replaced as appropriate.
In this specification, the terms "mounted," "connected," and "connected" are to be construed broadly unless otherwise specifically indicated and limited. For example, it may be a fixed connection, or a removable connection, or an integral connection; can be a mechanical connection, or an electrical connection; either directly or indirectly through intervening components, or both may be interconnected. The specific meaning of the above terms in the present disclosure can be understood in specific instances by those of ordinary skill in the art.
In the present specification, "parallel" means a state in which an angle formed by two straight lines is-10 ° or more and 10 ° or less, and therefore, includes a state in which the angle is-5 ° or more and 5 ° or less. The term "perpendicular" refers to a state in which the angle formed by two straight lines is 80 ° or more and 100 ° or less, and therefore includes a state in which the angle is 85 ° or more and 95 ° or less. In the present specification, "film" and "layer" may be interchanged with each other. For example, the "conductive layer" may be sometimes replaced with a "conductive film". Similarly, the "insulating film" may be replaced with an "insulating layer".
The embodiment of the disclosure provides a display substrate, including substrate base plate and heat radiation structure layer and the pixel unit that sets up on substrate base plate, heat radiation structure layer includes water conservancy diversion passageway and reservoir and coolant liquid, and display substrate includes the display area and is located the peripheral region of display area periphery, and the pixel unit is located the display area, and the water conservancy diversion passageway encircles the pixel unit, and the reservoir is located the peripheral region and communicates with the water conservancy diversion passageway, and the coolant liquid is filled in water conservancy diversion passageway and reservoir.
The embodiment of the disclosure provides a display substrate, through setting up the heat radiation structure layer, the water conservancy diversion passageway of heat radiation structure layer encircles the pixel unit, and the coolant liquid in the water conservancy diversion passageway carries out the heat exchange through the coolant liquid with the reservoir, cools off the pixel unit, compares in the radiating mode of conducting strip, and this mode has higher thermal conductivity efficiency, can reduce the temperature in display area, and then has promoted the life of pixel unit.
Technical solutions of display substrates according to exemplary embodiments of the present disclosure are exemplarily described below with reference to the accompanying drawings.
Fig. 1a is a plan view of a display substrate according to an exemplary embodiment of the present disclosure, and fig. 1b is a cross-sectional view at a position a-a in fig. 1 a. In some exemplary embodiments, as shown in fig. 1a and 1b, the display substrate 1 includes a display area 11 and a peripheral area 12 located at the display area 11, and the peripheral area 12 may be located at one side of the display area 11, at a first side and a second side opposite to the first side of the display area 11, or around the display area 11. The display substrate 1 includes a substrate 100, and a heat dissipation structure layer 200 and a pixel unit 300 disposed on the substrate 100. The pixel unit 300 is disposed in the display region 11. The pixel cell 300 includes a photodiode 301 and a Quantum Dot (QD) layer 302 disposed on a side of the photodiode 301 facing away from the substrate 100. The photodiode 301 may employ a Micro LED and a μ LED. The photodiode 301 may be a blue diode and the quantum dot layer 302 is used to convert blue light into red or green light. The heat dissipation structure layer 200 includes a flow guiding channel 201, a liquid storage tank 202 and a cooling liquid 203, the liquid storage tank 202 is disposed in the peripheral region 12, the flow guiding channel 201 surrounds the pixel unit 300 and is communicated with the liquid storage tank 202, and the cooling liquid 203 is filled in the liquid storage tank 202 and the flow guiding channel 201 and is configured to flow in the flow guiding channel 201 and the liquid storage tank 202 to cool the pixel unit 300. In some embodiments, the cooling fluid may employ glycerin, ethylene glycol, and the like.
In this example, the heat dissipation structure layer 200 is disposed on the display substrate 1, the flow guide channel 201 of the heat dissipation structure layer 200 surrounds the pixel unit 300, the cooling liquid 203 in the flow guide channel 201 exchanges heat with the cooling liquid in the liquid storage tank 202 to cool the pixel unit 300, and compared with a heat dissipation mode of a heat conduction sheet, the heat dissipation mode has higher heat conduction efficiency, the temperature of the display area 11 can be reduced, and the service life of the pixel unit 300 is further prolonged.
Fig. 1c is an equivalent circuit diagram of a pixel cell driving circuit according to an exemplary embodiment of the disclosure. As shown in fig. 1b and 1c, in some exemplary embodiments, the substrate 100 includes a substrate 100a and an array structure layer sequentially disposed on the substrate 100a, and the array structure layer of the display region 11 includes an active layer 101, a first insulating layer 102, a first metal layer, a second insulating layer 104, a second metal layer, a third insulating layer 106, a third metal layer, a first planarization layer 108, a fourth metal layer, a second planarization layer 110, a fourth insulating layer 111, a fifth metal layer and a fifth insulating layer 113, and a third planarization layer 114, which are sequentially disposed. The first metal layer includes a gate electrode 1031 and a first capacitance electrode 1032. The second metal layer includes a second capacitor electrode 1051. The orthographic projection of the first capacitive electrode 1032 on the substrate 100a and the orthographic projection of the second capacitive electrode 1051 on the substrate overlap. The third metal layer includes a source electrode 1071, a drain electrode 1072, a data line 1073, a first power connection line 1074, and a second capacitance electrode connection line 1075, the third insulating layer 106 is provided with a first via hole exposing the active layer 101, a second via hole exposing the first capacitance electrode 1032, and a third via hole exposing the second capacitance electrode 1051, the source electrode 1071 and the drain electrode 1072 are connected with the active layer 101 through the first via hole, the first power connection line 1074 is connected with the first capacitance electrode 1032 through the second via hole, the second capacitance electrode connection line 1075 is connected with the second capacitance electrode 1051 through the third via hole, and the data line 1073 is connected with the source electrode 1071 and the second capacitance electrode connection line 1075. The fourth metal layer includes a first power line 1091, a second power line 1092, and a drain connection electrode 1093. The first planarization layer 108 includes a fourth via hole exposing the drain electrode 1072 and a fifth via hole exposing the first power supply connection line 1074, the drain connection electrode 1093 is connected with the drain electrode 1072 through the fourth via hole, and the first power supply line 1091 is connected with the first power supply connection line 1074 through the fifth via hole. The fifth metal layer includes first and second pads 1121 and 1122 and a compensation electrode 1123, the fourth insulating layer 111 includes a sixth via hole exposing the drain connection electrode 1093, a seventh via hole exposing the second power line 1092, and an eighth via hole exposing the first power line, the first pad 1121 is connected to the drain connection electrode 1093 through the sixth via hole, the second pad 1122 is connected to the second power line 1092 through the seventh via hole, and the compensation electrode 1123 is connected to the first power line 1091 through the eighth via hole. The fifth insulating layer 113 covers the compensation electrode 1123. The third planarization layer 114 is provided thereon with ninth vias exposing the first and second pads 1121 and 1122. The first bonding pad 1121 and the second bonding pad 1122 further include a gold plating layer 115 thereon, and the anode of the light emitting diode 301 is soldered to the first bonding pad 1121, and the cathode of the light emitting diode 301 is soldered to the second bonding pad 1122. The gate electrode 1031, the active layer 101, the source electrode 1071, and the drain electrode 1072 constitute a drive transistor (DTFT)116, and the first capacitance electrode 1032 and the second capacitance electrode 1051 constitute a first storage capacitance 117. The first power line 1091 is connected to a first power terminal VDD, which continuously provides a high level signal for supplying a driving current to the light emitting diode 301 under the control of the driving scan terminal Gate _ L and the driving Data terminal Data _ L. The second power line 1092 is connected to a second power source terminal VSS, which continuously supplies a low-level signal. In some embodiments, the materials of the first, second, third, and fourth insulating layers 102, 104, 106, and 111 and the fifth insulating layer 113 may adopt any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), and may be a single layer, a multilayer, or a composite layer. The first metal layer, the second metal layer, the third metal layer, the fourth metal layer, and the fifth metal layer may employ a metal material, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may be a single-layer structure or a multi-layer composite structure. The active layer 101 may be made of various materials such as hexathiophene, polythiophene, polysilicon, and the like. That is, the substrate may be a Low Temperature Poly-Silicon (LTPS) structure or may be an Oxide thin film transistor (Oxide) structure. The material of the first and second planarization layers 108 and 110 may be polyimide, polymethyl methacrylate, or the like. The third flat layer 114 may employ any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON).
In some exemplary embodiments, the display substrate further includes a first protective layer 303 disposed between the light emitting diode 301 and the quantum dot layer 302 and a second protective layer 304 disposed on a side of the quantum dot layer 302 away from the light emitting diode 301. The first protective layer 303 may prevent the light emitting diode 301 from being damaged. The second protection layer 304 may prevent the quantum dot layer 304 from being corroded and failed by water and oxygen. The material of the first protective layer 303 and the second protective layer 304 may employ any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON).
Fig. 2 is a partial cross-sectional view showing a substrate parallel to a substrate base direction according to an exemplary embodiment of the present disclosure. In some exemplary embodiments, as shown in fig. 2, the heat dissipation structure layer 201 includes a plurality of heat dissipation regions 13 extending along a first direction and arranged along a second direction, wherein the first direction is an X direction in fig. 2, the second direction is a Y direction in fig. 2, and the first direction intersects with the second direction, for example, the first direction is perpendicular to the second direction, and the perpendicular may be substantially perpendicular, for example, the first direction and the second direction form an angle of 87 °, 90 °, or 93 °. Hereinafter, the X direction represents a first direction, and the Y direction represents a second direction, to explain the technical solution.
In some exemplary embodiments, as shown in fig. 2, the at least one heat dissipation area 13 includes a plurality of heat dissipation units 204 arranged along the X direction and a first flow guiding wall 205 extending along the X direction, the heat dissipation units 204 are located in the display region 11, the heat dissipation units 204 include a first surrounding wall 206 and a second surrounding wall 207, the first surrounding wall 206 surrounds a pixel opening, the second surrounding wall 207 surrounds an outer side of the first surrounding wall 206 and has end portions spaced apart to form a flow passing opening 208, the first flow guiding wall 205 is disposed opposite to the flow passing opening 208, the flow guiding channel 201 includes a first flow guiding channel 2011 formed between the first surrounding wall 206 and the second surrounding wall 207 and a plurality of second flow guiding channels 2012 formed between the heat dissipation units 204 and the first flow guiding wall 205, the first flow guiding channel 2011 and the second flow guiding channel 2012 are communicated through the flow passing opening 208, the second flow guiding channel 2012 is communicated with the reservoir 202, and the pixel unit 300 is disposed in the pixel opening.
In some exemplary embodiments, as shown in fig. 2, the heat dissipating unit 204 further includes a first driving electrode 209 disposed in the first wall 206 and a second driving electrode 210 disposed in the second wall 207, wherein the first driving electrode 209 disposed in the first wall 206 and the second driving electrode 210 disposed in the second wall 207 may be understood as shown in fig. 1b, the first driving electrode 209 and the second driving electrode 210 may be directly in contact with the third planar layer 114, the first wall 206 covers the first driving electrode 209, and the second wall 207 covers the second driving electrode 210, or may be understood as shown in fig. 1e, the first wall 206 covers the first driving electrode 209, and the second wall 207 covers the second driving electrode 210. The first driving electrode 209 and the second driving electrode 210 are configured to drive the first wall 206 to press the first flow guiding passage 2011 when opposite voltages are applied. That is, the first wall 206 can be deformed by an external force, and the external force is generated by applying opposite voltages to the first driving electrode 209 and the second driving electrode 210. A positive voltage may be applied to the first driving electrode 209, and a negative voltage may be applied to the second driving electrode 210, for example, a voltage of +5V is applied to the first driving electrode 209, a voltage of-5V is applied to the second driving electrode 210, and the first driving electrode 209 and the second driving electrode 210 attract each other under the action of the positive and negative voltages to drive the first surrounding wall 206 to be close to the second surrounding wall 207 to press the first flow guide channel 2011, so that the cooling liquid 203 in the first flow guide channel 2011 is discharged into the second flow guide channel 2012. The voltage applied to the first driving electrode 209 and the second driving electrode 210 is cancelled, the first surrounding wall 206 is restored under the action of self resilience force, or the first driving electrode 209 and the second driving electrode 210 are applied with same polarity voltage, the first surrounding wall 206 is restored under the action of repulsion force of the first driving electrode 209 and the second driving electrode 210, the first guide channel 2011 generates suction force when being restored to the initial state from the extrusion state, the cooling liquid 203 flows back into the first guide channel 2011 under the action of the suction force, or the cooling liquid 203 flows back into the first guide channel 2011, and then the cooling liquid 203 in the first guide channel 2011 exchanges with the cooling liquid in the second guide channel 2012, so that updating is realized. The first driving electrode 209 may be led out to a first driving end of the peripheral area 12 through a lead, the second driving electrode 210 may be led out to a second driving end of the peripheral area 12 through a lead, the first driving end and the second driving end are connected to a driving circuit, and the driving circuit applies a voltage to the first driving electrode 209 and the second driving electrode 210 through leads. In one example, in the same heat dissipation area 13, the first driving electrodes 209 of the plurality of heat dissipation units 204 are led out to the same first driving end, and the second driving electrodes 210 of the plurality of heat dissipation units 204 can be led out to the same second driving end through a lead wire. In another exemplary embodiment, after the first driving electrode 209 and the second driving electrode 210 are applied with opposite voltages, the second wall 207 is deformed to press the first flow guiding channel 2011, or both the first wall 206 and the second wall 207 are deformed to press the first flow guiding channel 2011.
In some exemplary embodiments, the width of the first driving electrode 209 and the second driving electrode 210 is 2 micrometers to 10 micrometers in a plane parallel to the substrate base plate 100, wherein the width of the first driving electrode 209 and the second driving electrode 210 refers to a length perpendicular to an extending direction of the first driving electrode 209, and the width of the second driving electrode 210 refers to a length perpendicular to an extending direction of the second driving electrode 2109. The material of the first wall and the second wall can be polyimide, polyurethane or polymethacrylate and the like with elasticity.
In some exemplary embodiments, as shown in fig. 2, the first driving electrode 209 includes a plurality of sub driving electrodes 2091 disposed circumferentially along the first peripheral wall 206. The plurality of sub-driving electrodes 2091 correspond to the second driving electrodes 10 in position and are configured to sequentially apply voltage in the clockwise direction, so that the first flow guide channel 2011 is squeezed in the clockwise direction, the cooling liquid 203 flows into the second flow guide channel 2012 from the first flow guide channel 2011 in the clockwise direction, and then the voltage can be removed in the clockwise direction, and the cooling liquid 203 in the second flow guide channel 2012 flows back to the first flow guide channel 2011. The sub-driving electrode 2091 corresponds to the second driving electrode 10 in position and is set to sequentially apply voltage in the counterclockwise direction, so that the first flow guide channel 2011 is squeezed in the counterclockwise direction, the cooling liquid 203 flows from the first flow guide channel 2011 to the second flow guide channel 2012 in the counterclockwise direction, and then the voltage can be removed in the counterclockwise direction, and the cooling liquid 203 in the second flow guide channel 2012 flows back to the first flow guide channel 2011.
Fig. 3 is a schematic diagram of an operation of a heat dissipation unit according to an exemplary embodiment of the present disclosure. In some exemplary embodiments, as shown in fig. 2, the first wall 206 includes a first sub-wall 2061 and a second sub-wall 2062 extending in the X direction and spaced apart in the Y direction, and a third sub-wall 2063 and a fourth sub-wall 2064 extending in the Y direction and spaced apart in the X direction, the first sub-wall 2061, the second sub-wall 2062, the third sub-wall 2063, and the fourth sub-wall 2064 form a pixel opening, the second wall 207 is disposed outside the second sub-wall 2062, the third sub-wall 2063, and the fourth sub-wall 2064, the first sub-wall 2061 is adjacent to the first flow guide wall 205, the end of the second wall 207 is flush with the side of the first sub-wall 2061 adjacent to the first flow guide wall 205, the plurality of sub-actuation electrodes 2091 include a first sub-actuation electrode 2092 disposed in the third sub-wall 2063, a second sub-actuation electrode 2093 disposed in the second sub-wall 2062, and a third sub-actuation electrode 2094 disposed in the fourth sub-wall 2064. As shown in fig. 3, the second driving electrode 210 is applied with a positive voltage, for example, +5V, the first sub driving electrode 2092, the second sub driving electrode 2093 and the third sub driving electrode 2094 are sequentially applied with a negative voltage, for example, -5V, the third sub wall 2063, the second sub wall 2062 and the fourth sub wall 2064 sequentially press the first flow guide channel 2011, the cooling liquid 203 is pressed into the second flow guide channel 2012 from the position of the third sub wall 2063, the position of the second sub wall 2062 and the position of the fourth sub wall 2064, and the cooling liquid 203 flows out of the first flow guide channel 2011 in a counterclockwise direction. Then, the voltage applied to the first sub-driving electrode 2092, the second sub-driving electrode 2093, and the third sub-driving electrode 2094 is sequentially removed along the counterclockwise direction, the third sub-surrounding wall 2063, the second sub-surrounding wall 2062, and the fourth sub-surrounding wall 2064 are sequentially restored, the first flow guide channel 2011 gradually recovers from the extrusion state to the initial state along the counterclockwise direction, the cooling liquid 203 flows into the first flow guide channel 2011 from the second flow guide channel 2012 again, so that the cooling liquid 203 in the first flow guide channel 2011 is updated, that is, the cooling liquid 203 in the first flow guide channel 2011 exchanges with the cooling liquid 203 in the second flow guide channel 2012, and further, the heat transfer is realized. In an example, the first sub driving electrodes 2092 of the multiple heat dissipation units 204 of the same heat dissipation area may be led out to the first sub driving end of the peripheral area 12 through lead wires, the second sub driving electrodes 2093 may be led out to the second sub driving end of the peripheral area 12 through lead wires, and the third sub driving electrodes 2094 may be led out to the third sub driving end of the peripheral area 12 through lead wires, that is, the first driving end includes the first sub driving end, the second sub driving end, and the third sub driving end. The first sub-driving terminal, the second sub-driving terminal and the third sub-driving terminal may be connected to a driving circuit. The driving circuit can control the plurality of heat dissipating units 204 simultaneously, that is, the first sub driving electrodes 2092 of the plurality of heat dissipating units 204 are applied with or removed of voltage simultaneously, the second sub driving electrodes 2093 are applied with or removed of voltage simultaneously, and the third sub driving electrodes 2094 are applied with or removed of voltage simultaneously.
In some exemplary embodiments, as shown in fig. 2, the first peripheral wall 206 is provided with a plurality of pressing protrusions 211 at intervals on a side facing the second peripheral wall 207. The pressing protrusion 211 may compress the first flow guide path 2011, and enhance the flow of the cooling fluid 203 when the first and second surrounding walls 206 and 207 press the first flow guide path 2011. In another example, the side of the second surrounding wall 207 facing the first surrounding wall 206 is provided with a plurality of pressing protrusions 211 at intervals, or the side of the second surrounding wall 207 facing the first surrounding wall 206 and the side of the first surrounding wall 206 facing the second surrounding wall 207 are provided with a plurality of pressing protrusions 211 at intervals. In a plane perpendicular to the substrate base plate, the pressing projection is trapezoidal, and a side of the pressing projection remote from the first peripheral wall is narrower than a side facing the first peripheral wall.
In some exemplary embodiments, as shown in fig. 2, within the same heat dissipation region, the second enclosure wall 207 includes a common wall 2071, and the common wall 2071 is shared by the adjacent heat dissipation units 204. In this example, after the voltage is applied to the second driving electrodes 210 in the common wall 2071, the second driving electrodes 210 in the common wall 2071 are attracted by the first driving electrodes 209 at both sides, and the forces are balanced, so that the common arm 2071 is not deformed. That is, after the first driving electrode 209 and the second driving electrode 210 are applied with opposite voltages, the deformation mainly occurs on the first wall 206, and the first wall 206 moves to be close to the second wall 207 to press the first flow guiding passage 2011.
FIG. 1d is a cross-sectional view of the heat dissipating structure layer at the position B-B in FIG. 1 a; fig. 1f is another cross-sectional view of the heat dissipation structure layer at the position B-B in fig. 1 a. In some exemplary embodiments, as shown in fig. 2, the third driving electrode 212 is disposed inside the first wall 206 adjacent to one side of the first guide wall 205, that is, the third driving electrode 212 is disposed inside the first sub-wall 2061, and the fourth driving electrode 213 extending in the X direction is disposed inside the first guide wall 205. The first wall 206 is provided with a third driving electrode 212 inside the side adjacent to the first current guiding wall 205 and a fourth driving electrode 213 inside the first current guiding wall 205, it can be understood that the first wall 206 covers the third driving electrode 212, the first current guiding wall 205 covers the fourth driving electrode 213, and the third driving electrode 212 and the fourth driving electrode 213 are directly contacted with the third flat layer 114, as shown in fig. 1d, or it can be understood that the first wall 206 wraps the third driving electrode 212 and the first current guiding wall wraps the fourth driving electrode 213, as shown in fig. 1 f. After the fourth driving electrode 213 and the third driving electrode 212 are applied with opposite voltages, for example, a voltage of-5V may be applied to the third driving electrode 212, a voltage of +5V may be applied to the fourth driving electrode 213, the fourth driving electrode 213 and the third driving electrode 212 attract each other and drive the first flow guide wall 205 to press the second flow guide wall 2012, so that the cooling liquid 203 in the second flow guide channel 2012 flows to the reservoir 202, mixes with the cooling liquid 203 in the reservoir 202 to cool down, after the fourth driving electrode 213 and the third driving electrode 212 are de-energized or are applied with the same polarity voltage, the first flow guide wall 205 is reset, the second flow guide channel 2012 is restored to the initial state from the pressed state, and the cooling liquid 203 with a lower temperature flows back from the reservoir 202 to the second flow guide channel 2012, so as to realize replacement and heat transfer of the cooling liquid 203 in the second flow guide channel 2012. In this example, the widths of the fourth drive electrode 213 and the third drive electrode 212 are 2 to 10 micrometers in a plane parallel to the substrate base plate, where the width of the fourth drive electrode refers to the length of the fourth drive electrode in the Y direction and the width of the third drive electrode refers to the length of the third drive electrode in the Y direction. In other embodiments, after the fourth driving electrode 213 and the third driving electrode 212 are applied with opposite voltages, the first surrounding wall 206 presses the second guiding channel 2012 or both the first surrounding wall 206 and the first guiding wall 205 press the second guiding channel 2012 under the driving of the fourth driving electrode 213 and the third driving electrode 212.
Fig. 4 is a schematic diagram illustrating an operation principle that a second flow guide channel is extruded according to an exemplary embodiment of the present disclosure, and fig. 5 is an equivalent circuit diagram illustrating an operation principle of a fourth sub-driving electrode according to an exemplary embodiment of the present disclosure. In some exemplary embodiments, as shown in fig. 4, in the same heat dissipation area 13, the fourth driving electrode 213 includes a plurality of fourth sub driving electrodes 2131 arranged at intervals along the X direction, and the fourth sub driving electrodes 2131 correspond to the third driving electrodes 212 one to one. When a positive voltage is sequentially applied to the fourth sub-driving electrode 2131 along the X direction, the positive voltage acts on the third driving electrode 212, so that the second flow guide channels 2012 are sequentially pressed along the X direction. In an example, as shown in fig. 5, the display substrate further includes a thin film transistor 214 and a driving scan connecting line 215 corresponding to the fourth sub-driving electrode 2131 one by one, and a driving power line 216, the thin film transistor 214 includes a control electrode 2141, a first electrode 2142, and a second electrode 2143, the control electrode 2141 is connected to the corresponding driving scan connecting line 215, the second electrode 2143 is connected to the corresponding fourth sub-driving electrode 2131, and the first electrode 2142 of the thin film transistor 214 in the same heat dissipation area 13 is connected to the driving power line 216. The driving scan connection line 215 may be connected to a driving chip of the peripheral region 12. As shown in fig. 4 and fig. 5, the tfts 214 are sequentially turned on by the driving chip along the sequential scanning connection line 215, the driving power line 216 sequentially applies a positive voltage, for example, a voltage of +5V, to the plurality of fourth sub-driving electrodes 2131 spaced along the X direction, the third driving electrode 212 is maintained at a negative voltage, for example, a voltage of-5V, the fourth sub-driving electrodes 2131 are sequentially attracted to the third driving electrode 212 along the X direction to drive the first diversion wall 205 to sequentially press the second diversion channel 2012 along the X direction, so as to press the cooling liquid 203 from one side to the other side of the second diversion channel 2012 and enter the liquid storage tank 202 to mix with the cooling liquid 203 in the liquid storage tank 202 for cooling, and then the driving chip sequentially turns off the tfts 214 according to a predetermined timing sequence, the positive voltage applied to the fourth sub-driving electrode 2131 by the driving power line 216 is sequentially cancelled along the X direction, the attractive force with the third driving electrode 212 is gradually lost along the X direction, the second flow guide channel 2012 is sequentially restored to the initial state from the extrusion state along the X direction, the cooling liquid 203 is pumped out from the liquid storage tank 202, and then the replacement and heat transfer of the cooling liquid 203 in the second flow guide channel 2012 are realized. Control stage 2041 may be a gate of tft 204, first pole 2042 may be a source of tft 214, and second pole 2043 may be a drain of tft 214. The thin film transistor 214 may be disposed in the display region 11 or in the peripheral region 12. In this example, the potential applied to the fourth sub drive electrodes 2131 by the voltage applied to the fourth sub drive electrodes 2131 one by one may be referred to as a scanning potential, and the potential of the third drive electrode 212 is kept constant and may be referred to as a fixed potential.
In some exemplary embodiments, as shown in fig. 1d, the first guide wall 205 is provided with a plurality of pressurizing protrusions 2051 on a side facing the first surrounding wall 206, and the plurality of pressurizing protrusions 2051 are spaced along the X direction and correspond to the fourth sub driving electrode. The pressurizing protrusion 2051 may compress the space of the second guide passage 2012, and enhance the flow of the cooling liquid 203 when pressing the second guide passage 2012. In one example, the pressurizing protrusion has a trapezoidal shape in a plane perpendicular to the substrate base plate and the X direction, and a side of the pressurizing protrusion away from the first guide wall is narrower than a side toward the first guide wall. In other exemplary embodiments, the first surrounding wall is provided with a plurality of pressurizing protrusions on a side facing the first guide wall, or both the first surrounding wall on a side facing the first guide wall and the first guide wall 205 on a side facing the first surrounding wall 206 are provided with a plurality of pressurizing protrusions.
Fig. 6 is an enlarged view of a position a in fig. 1a, and fig. 7 is an operation principle diagram of a first closing structure and a second closing structure according to an exemplary embodiment of the present disclosure. In some exemplary embodiments, as shown in fig. 6 and 7, the heat dissipation region 13 further includes a second flow guiding wall 217, the second flow guiding wall 217 is located on the peripheral region 12 and disposed on the second surrounding wall 207 adjacent to the reservoir 202, a connection channel 2013 communicating the second flow guiding channel 2012 with the reservoir 202 is formed between the second flow guiding wall 217 and the first flow guiding wall 205, the first flow guiding wall 205 is provided with a first closing structure 218, the second flow guiding wall 217 is provided with a second closing structure 219, and the first closing structure 218 and the second closing structure 219 are configured to abut against each other to close the connection channel 2013 when an opposite voltage is applied thereto. The first sealing structure 218 includes a first closing part 2181 and a first switch electrode 2182 disposed in the first closing part 2181, the second sealing structure 219 includes a second closing part 2191 and a second switch electrode 2192 disposed in the second closing part 2191, the first closing part 2181 includes a first attachment surface 2183, the second closing part 2191 includes a second attachment surface 2193, and the first closing part 2181 and the second closing part 2191 are disposed to approach each other after the first switch electrode 2182 and the second switch electrode 2192 are applied with opposite voltages, so that the first attachment surface 2183 and the second attachment surface 2193 attach to close the connection channel 2013. The first switching electrode 2182 disposed in the first closing part 2181 and the second switching electrode 2192 disposed in the second closing part 2191 may be understood as the first closing part 2181 covering the first switching electrode 2182, the second closing part 2191 covering the second switching electrode 2192, and the first switching electrode 2182 and the second switching electrode 2192 contacting the third planarization layer 114, or may be understood as the first closing part 2181 wrapping the first switching electrode 2182 and the second closing part 2191 wrapping the second switching electrode 2192. In an example, the first and second closures 2181 and 2191 may each be a triangular prism structure, the triangular prism including an upper bottom surface, a lower bottom surface, and three side surfaces, the upper and lower bottom surfaces being disposed along a direction perpendicular to the substrate base plate, one side surface of the first closure 2181 being connected to the first flow guide wall 205, one side surface of the second closure 2191 being connected to the second flow guide wall 217, the first abutment surface 2183 being disposed at a side surface of the first closure 2181 adjacent to a side surface of the second closure 2191, and the second abutment surface 2193 being disposed at a side surface of the second closure 2191 adjacent to the side surface of the first closure 2181. In another example, the first closure 2181 includes a groove that opens toward the second closure 2191, the second closure 2191 includes a protrusion toward the first closure 2181, the first abutment surface 2183 provides an inner wall surface of the groove, and the second abutment surface 2193 provides an outer surface of the protrusion. The first and second closures 2181 and 2191 may be made of one of polyurethane, polyimide, and silicone, and the first and second closures 2181 and 2191 are insulators.
In some exemplary embodiments, as shown in fig. 1a, the peripheral region 12 includes a first peripheral region 14 and a second peripheral region 15 arranged along the X direction, the first peripheral region 14 is located at a first side of the display region 11, the second peripheral region 15 is located at a second side of the display region 11 opposite to the first side, the reservoir 202 includes a first reservoir 2021 located at the first peripheral region 14 and a second reservoir 2022 located at the second peripheral region 15, the connection channel 2013 includes a first connection channel communicated with the first reservoir 2021 and a second connection channel communicated with the second reservoir 2022, and the first and second connection channels are each provided with a first enclosing structure 218 and a second enclosing structure 219. Describing one heat dissipation area 13, the operation process of the other heat dissipation areas 13 is the same, and in specific operation, as shown in fig. 1a and fig. 7, when opposite voltages are applied to the first switch electrode 2182 and the second switch electrode 2192 in the first connection channel, the first closed structure 2181 and the second closed structure 2191 in the first connection channel are driven by the first switch electrode 2182 and the second switch electrode 2192 to approach each other, so that the first attachment surface 2183 and the second attachment surface 2193 attach to close the first connection channel, then when voltages are sequentially applied to the plurality of fourth sub-driving electrodes 2131 along the X direction, the fourth sub-driving electrodes 2131 and the third driving electrode 212 drive the first flow guiding wall 205 and the first surrounding wall 206 to press the second flow guiding channel 2012, the second flow guiding channel 2012 is gradually narrowed along the X direction, the cooling liquid 203 in the second flow guiding channel 2012 is pressed to the second reservoir 2022 along the X direction, the cooling liquid 203 in the second diversion channel 2012 is mixed with the cooling liquid 203 in the second reservoir 2022, and is cooled at the position of the second reservoir 2022. Opposite voltages are applied to the first switch electrode 2182 and the second switch electrode 2192 in the second connection channel, the first closing structure 2181 and the second closing structure 2191 in the second connection channel approach each other under the driving of the first switch electrode 2182 and the second switch electrode 2192, and the first bonding surface 2183 and the second bonding surface 2193 bond and close the second connection channel. The opposite voltages applied to the first switch electrode 2182 and the second switch electrode 2193 in the first connection channel are removed, the first attachment surface 2183 and the second attachment surface 2193 are separated, the first connection channel is opened, then, the voltages of the plurality of fourth sub-driving electrodes 2131 are sequentially removed along the X direction, the second flow guide channel 2012 is gradually restored to the initial state, the cooled cooling liquid 203 in the first liquid storage tank 2021 flows into the second flow guide channel 2012, and then the cooling liquid 203 in the first flow guide channel 2011 and the cooling liquid 203 in the second flow guide channel 2012 are mixed and then flow back into the first flow guide channel 2011 by controlling the first driving electrode 209 and the second driving electrode 210, so that the cooling liquid 203 in the first flow guide channel 2011 is updated and heat is transferred to the cooling liquid 203 in the first flow guide channel 2011. In this example, by alternately closing or opening the first enclosing structure 218 and the second enclosing structure 219 in the first connecting channel and the second connecting channel, the cooling and replenishment of the cooling liquid 203 in the second diversion channel 2012 can be separated, that is, the cooling liquid 203 in the second diversion channel 2012 can be cooled in the first liquid storage tank 2021 and then replenished with the cooled cooling liquid 203 in the second liquid storage tank 2022, or the cooling liquid 203 in the second diversion channel 2012 can be cooled in the second liquid storage tank 2022 and then replenished with the cooled cooling liquid 203 in the first liquid storage tank 2021, thereby ensuring that the replaced cooling liquid 203 in the second diversion channel 2012 is always kept at a lower temperature, thereby more effectively cooling the pixel unit 300 and prolonging the life of the pixel unit 300.
In some exemplary embodiments, the first reservoir 2021 and the second reservoir 2022 are each multiple and correspond one-to-one to the heat dissipation area 13. Each heat dissipation region 13 corresponds to a set of the first reservoir 202 and the second reservoir 202. In another example, a set of the first reservoir 202 and the second reservoir 202 may correspond to a plurality of heat dissipation areas 13. That is, one set of the first reservoir 202 and the second reservoir 202 corresponds to at least one heat dissipation area 13.
Fig. 8a is a schematic plan view of another display substrate according to an exemplary embodiment of the disclosure, fig. 8b is a cross-sectional view of a metal heat dissipation layer according to an exemplary embodiment of the disclosure, and fig. 8c is a layout diagram of through holes on a substrate according to an exemplary embodiment of the disclosure. In some exemplary embodiments, as shown in fig. 8a to 8c, the display substrate further includes a metal heat dissipation layer 400 disposed on the substrate 100 and located in the peripheral region 12, an orthogonal projection of the metal heat dissipation layer 400 on the substrate 100 covers an orthogonal projection of the liquid storage tank 202 on the substrate 100, and the metal heat dissipation layer 400 is used for cooling the cooling liquid 203 in the liquid storage tank 202. In an example, the metal heat dissipation layer 400 includes a first metal heat dissipation layer 401 and a second metal heat dissipation layer 402, the first metal heat dissipation layer 401 is disposed on a side of the substrate 100 away from the heat dissipation structure layer, the second metal heat dissipation layer 402 is disposed on a side of the substrate 100 facing the heat dissipation structure layer, a plurality of through holes are uniformly distributed on the substrate 100, the plurality of through holes are located in the peripheral region 12, the through holes are filled with a heat conductive material 403, and the first metal heat dissipation layer 401 and the second metal heat dissipation layer 402 both cover the plurality of through holes. The metal heat dissipation layer 400 may be disposed on the first and second peripheral regions 14 and 15 and correspond to the first and second liquid storage tanks 2021 and 2022. The first metal heat dissipation layer 401, the second metal heat dissipation layer 402, and the heat conductive material 403 may employ silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), molybdenum (Mo), and the like.
In some exemplary embodiments, as shown in fig. 1b, the display substrate further includes a cover plate 500, and the cover plate 500 is disposed on a side of the heat dissipation structure layer 200 away from the substrate 100. The cover plate 500 is a transparent cover plate, and may be glass. In one example, the heat dissipation structure layer 200 is provided with an opening exposing the flow guide channel 201 and the reservoir 202 toward the cover plate 500, and the cover plate 500 is provided with a leakage preventing plug 501 sealing the opening toward the heat dissipation structure layer 201.
The technical scheme of the display substrate of the present disclosure is exemplarily illustrated by the process of manufacturing the display substrate of the present disclosure. In this example, one heat dissipation area is taken as an example, and the other heat dissipation areas may have the same structure as the heat dissipation area of this example. The "patterning process" referred to in this disclosure includes processes of depositing a film layer, coating a photoresist, mask exposing, developing, etching, and stripping a photoresist. The deposition may employ any one or more selected from sputtering, evaporation and chemical vapor deposition, the coating may employ any one or more selected from spray coating and spin coating, and the etching may employ any one or more selected from dry etching and wet etching. "thin film" refers to a layer of a material deposited or coated onto a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. When the "thin film" requires a patterning process throughout the fabrication process, it is referred to as a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern". The "a and B are disposed in the same layer" in the present disclosure means that a and B are simultaneously formed by the same patterning process. "the orthographic projection of A includes the orthographic projection of B" means that the orthographic projection of B falls within the orthographic projection range of A, or the orthographic projection of A covers the orthographic projection of B.
(1) A base substrate is formed. Forming the base substrate includes forming an array structure layer on the substrate. The array structure layer of the display area comprises a driving transistor, a first bonding pad connected with a drain electrode of the driving transistor, a first bonding pad connected with a second power line, and a first storage capacitor, wherein a source electrode of the driving transistor is connected with a first power connecting line, a second capacitor electrode of the first storage capacitor is connected with the first power connecting line, a first capacitor electrode of the first storage capacitor is connected with a data line, and the data line is further connected with a grid electrode of the driving transistor.
(2) And forming a metal heat dissipation layer. Forming the metal heat dissipation layer includes: as shown in fig. 8b and 9, the substrate is provided with a plurality of through holes, the through holes are filled with a heat conductive material 403, a first metal film is deposited on one side of the substrate away from the array structure layer through a mask process to form a first metal heat dissipation layer 401, and a second metal film is deposited on one side of the array structure layer away from the substrate through a mask process to form a second metal heat dissipation layer 402. First and second metal heat sink layers 401 and 402 are formed in the first and second peripheral regions 14 and 15, the first and second metal heat sink layers 401 and 402 covering the plurality of vias. In an example, the first metal heat dissipation layer 401, the second metal heat dissipation layer 402, and the heat conductive material 403 may employ metals such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo). Fig. 9 is a structural view after a metal heat dissipation layer is formed according to an exemplary embodiment of the present disclosure.
(3) And transferring the light emitting diode. The transfer printed light emitting diode includes: the light emitting diodes 301 are transferred onto the corresponding first and second pads by a micro transfer technique. The light emitting diode 301 may be a Micro LED or a μ LED. Fig. 10 is a structural diagram after a light emitting diode is formed according to an exemplary embodiment of the present disclosure.
(4) Forming a first protective layer. Forming the first protective layer includes: on the substrate of the foregoing structure, a first protective film is deposited, and the first protective film is patterned by a patterning process, as shown in fig. 11, to form a first protective layer 303. The first protective layer 303 covers the light emitting diode, and an orthogonal projection of the first protective layer 303 on the base substrate 100 covers an orthogonal projection of the light emitting diode on the base substrate 100. In another example, the first protective layer may be formed by depositing a first protective film on the light emitting diode through a mask using a mask process. The first protective layer 303 may employ any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON). Fig. 11 is a structural diagram after a first protective layer is formed according to an exemplary embodiment of the present disclosure.
(3) A driving electrode pattern is formed. Forming the driving electrode pattern includes: on the substrate on which the foregoing structure is formed, a conductive film is deposited and patterned through a patterning process, as shown in fig. 12, to form a pattern of a first driving electrode 209, a second driving electrode 210, a third driving electrode 212, a fourth driving electrode 213, and a first switching electrode 2182 and a second switching electrode 2192. The display region 11 includes first, second, third, and fourth driving electrodes 209, 210, 212, and 213 formed therein, the first and second peripheral regions 14 and 15 include first and second switching electrodes 2182 and 2192, and the first, second, third, and fourth driving electrodes 209, 210, and 213 are drawn out of the peripheral region 12 through corresponding leads. The fourth driving electrodes 213 extend in the X direction and are spaced apart in the Y direction, and the first driving electrode 209, the second driving electrode 210, and the third driving electrode 212 are disposed between the adjacent fourth driving electrodes 213. Taking a peripheral structure of one light emitting diode as an example, the first driving electrode 209 includes a first sub driving electrode 2092, a second sub driving electrode 2093, and a third sub driving electrode 2094, the first sub driving electrode 2092 and the third sub driving electrode 2094 extend along the Y direction, the second sub driving electrode 2093 and the third driving electrode 212 extend along the X direction, the first sub driving electrode 2092, the second sub driving electrode 2093, the third sub driving electrode 2094, and the third driving electrode 212 enclose a rectangular area, and the light emitting diode 301 is located in the rectangular area. The second driving electrode 210 is disposed around the first sub driving electrode 2092, the second sub driving electrode 2093 and the third sub driving electrode 2094, the fourth driving electrode 213 includes a plurality of fourth sub driving electrodes 2131 disposed at intervals along the X direction, and the fourth sub driving electrodes 2131 are adjacent to the third driving electrode 212 and correspond to the third driving electrode 212 one by one. In exemplary embodiments, the conductive thin film may employ a metal including silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), molybdenum (Mo), and the like, or may employ a non-metallic material such as indium-doped tin oxide (ITO) or aluminum-doped zinc oxide (AZO), and the like. Fig. 12 is a structural view after a driving electrode is formed according to an exemplary embodiment of the present disclosure.
(4) Forming a pixel defining layer pattern. Forming the pixel defining layer pattern includes: after a pixel defining thin film is coated on the substrate on which the foregoing structure is formed, and is subjected to masking, exposure, and development, a pixel defining layer pattern is formed as shown in fig. 13. The pixel defining layer forms a plurality of heat dissipation regions extending in the X direction and arranged in the Y direction. In each heat dissipation area, the pixel definition layer includes a first flow guiding wall 205, a first surrounding wall 206, a second surrounding wall 207, a second flow guiding wall 217, a liquid storage tank, a first closing part 2181 and a second closing part 2191, the first flow guiding wall 205 extends along the X direction, the first flow guiding wall 205 covers a plurality of fourth sub-driving electrodes 2131, a plurality of boosting protrusions 2051 are arranged on one side of the first flow guiding wall 205 facing the first surrounding wall 206 at intervals, the boosting protrusions 2051 correspond to the fourth sub-driving electrodes 2131 in position, the first surrounding wall 206 surrounds the light emitting diode and covers the first driving electrode 209 and the third driving electrode 212, and the first surrounding wall 206 forms a pixel opening. The second wall 207 covers the second driving electrode 210, a first flow guiding channel 2011 is formed between the first wall 206 and the second wall 207, the first wall 206, the second wall 207, the first driving electrode 209 and the second driving electrode 210 form a heat dissipating unit, and a second flow guiding channel 2012 is formed between the first flow guiding wall 205 and the heat dissipating unit 204. The first peripheral wall 206 is provided with a plurality of pressing projections 211 toward the side of the second peripheral wall 207. The first peripheral zone 14 and the second peripheral zone 15 comprise a second diversion wall 217 and a first closing part 2181 and a second closing part 2191, the liquid storage tanks comprise a first liquid storage tank 2021 located in the first peripheral zone 14 and a second liquid storage tank 2022 located in the second peripheral zone 15, the first closing part 2181 of the first peripheral zone 14 covers the first switching electrode 2182 and is connected with the first diversion wall 205 of the first peripheral zone 14, the second closing part 2191 of the first peripheral zone 14 covers the second switching electrode 2192 and is connected with the second diversion wall 217 of the first peripheral zone 14, the second diversion wall 217 of the first peripheral zone 14 is connected with the adjacent second peripheral wall 207 and forms a first connection channel with the first diversion wall 205 of the first peripheral zone 14, the first connection channel is communicated with the first liquid storage tank 2021, the first closing part 2181 of the second peripheral zone 15 covers the first switching electrode 2182 and is connected with the first diversion wall 205 of the second peripheral zone 15, the second closing part 2191 of the second peripheral region 15 covers the second switching electrode 2192 and is connected to the second flow guide wall 217 of the second peripheral region 15, the second flow guide wall 217 of the second peripheral region 15 is connected to the adjacent second peripheral wall 207 and forms a second connection channel with the first flow guide wall 205 of the second peripheral region 15, and the second connection channel is communicated with the second reservoir 2021. In some exemplary embodiments, the material of the pixel defining layer may employ polyimide. In some embodiments, in order to form the squeeze projection and pressurizing projection structure as shown in fig. 1b and 1d, a sacrificial layer may be formed at the position of the squeeze projection and the pressurizing projection after the driving electrode is formed and before the pixel defining layer is formed, and the sacrificial layer may be etched away after the pixel defining layer is formed. Fig. 13 is a structural diagram after a pixel definition layer is formed according to an exemplary embodiment of the present disclosure.
(5) A quantum dot layer 302 is formed. Forming the quantum dot layer 302 includes: on the substrate of the foregoing structure, a quantum dot layer 302 is formed in the pixel opening by means of ink-jet printing, as shown in fig. 14. The quantum dot layer 302 covers the first protective layer 303. Fig. 14 is a structural diagram after forming a quantum dot layer according to an exemplary embodiment of the present disclosure.
(6) A second protective layer 304 is formed. Forming the second protective layer 304 includes: a second protective film is deposited on the substrate of the aforementioned pattern, and the second protective film is patterned through a patterning process, as shown in fig. 15, to form a second protective layer 304. The second protection layer 304 is disposed in the pixel opening and covers the quantum dot layer 302, and a side of the second protection layer 304 away from the substrate is flush with a side of the pixel defining layer away from the substrate. The material of the second protective layer 304 may employ any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON). Fig. 15 is a structural diagram after a second protective layer is formed according to an exemplary embodiment of the present disclosure.
(7) The cooling liquid 203 is filled. The filling coolant 203 includes: as shown in fig. 16, the first guide passage 2011, the second guide passage 2012 and the reservoir 202 are filled with the cooling liquid 203 by printing or pouring. Fig. 16 is a structural view of an exemplary embodiment of the present disclosure after being filled with a cooling liquid.
(8) And (6) packaging. The package includes: the foregoing structure is covered with a cover plate having a leakage-proof plug facing the pixel defining layer, the leakage-proof plug sealing the first flow guide passage 2011, the second flow guide passage 2012 and the reservoir 202.
Through the above process, the preparation of the display substrate shown in fig. 1b is completed.
In another exemplary embodiment, before forming the driving electrode pattern, forming a fourth planarization layer further includes: and coating a fourth flat film, and curing to form a film to form a fourth flat layer. The fourth flat layer is of the same material as the pixel defining layer.
Through the above process, the preparation of the display substrate shown in fig. 1e is completed.
As can be seen from the above preparation process, the first surrounding wall 206 surrounds the light emitting diode 301, a first flow guide channel 2011 is formed between the first surrounding wall 206 and the second surrounding wall 207, the first driving electrode 209 is disposed in the first surrounding wall 206, the second driving electrode 210 is disposed in the second surrounding wall 207, the first driving electrode 209 and the second driving electrode 210 attract and drive the first surrounding wall 206 to extrude the first flow guide channel 2011 under the action of opposite voltages, and the coolant 203 in the first flow guide channel 2011 is extruded into a second flow guide channel 2012 formed between the first flow guide wall 205 and the plurality of heat dissipation units. After the first driving electrode 209 and the second driving electrode 210 are powered off, the first surrounding wall 206 is restored, and the cooling liquid 203 in the second flow guide channel 2012 can be sucked into or automatically flow into the first flow guide channel 2011, so that the cooling liquid in the first flow guide channel 2011 can be replaced, and the temperature of the cooling liquid 203 in the first flow guide channel 2011 is further reduced. The fourth driving electrode 213 is disposed in the first flow guiding wall 205, the first surrounding wall 206 is further provided with a third driving electrode 212, the third driving electrode 212 and the fourth driving electrode 213 drive the first flow guiding wall 205 to press the second flow guiding channel 2012 under the action of opposite voltages, the first enclosing structure 218 and the second enclosing structure 219 in the first connecting channel and the second connecting channel are selectively opened and closed, the fourth sub driving electrode 2131 is sequentially pressed along the X direction or the opposite direction to the X direction, so that the cooling liquid 203 in the second flow guiding channel 2012 is mixed with the cooling liquid in the reservoir 202 on one side to reduce the temperature, and the cooling liquid in the reservoir 202 on the other side is supplemented into the second flow guiding channel 2012, thereby achieving replacement of the cooling liquid 203 in the second flow guiding channel 2012. In addition, the cooling of the cooling liquid 203 in the reservoir 202 can be accelerated by providing the metal heat dissipation layer 400 at the position of the reservoir 202.
The embodiment of the present disclosure further provides a method for manufacturing a display substrate, including:
forming a heat radiation structure layer and a pixel unit on a substrate;
the heat dissipation structure layer comprises a flow guide channel, a liquid storage tank and cooling liquid, the display substrate comprises a display area and a peripheral area located on the periphery of the display area, the pixel unit is located in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is located in the peripheral area and communicated with the flow guide channel, and the cooling liquid is arranged to be capable of flowing through the flow guide channel and the liquid storage tank.
The embodiment of the disclosure also provides a display device, which comprises the display substrate of the embodiment.
In some exemplary embodiments, the display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the convenience of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art of the present disclosure that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the terms of the appended claims.

Claims (14)

1. A display substrate, comprising: the display substrate comprises a display area and a peripheral area positioned on the periphery of the display area, the pixel unit is positioned in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is positioned in the peripheral area and communicated with the flow guide channel, and the cooling liquid is filled in the flow guide channel and the liquid storage tank; the heat dissipation structure layer comprises a plurality of heat dissipation areas which extend along a first direction and are arranged along a second direction, at least one heat dissipation area comprises a plurality of heat dissipation units which are arranged along the first direction and a first flow guide wall which extends along the first direction, the heat dissipation units are positioned in the display area, each heat dissipation unit comprises a first surrounding wall and a second surrounding wall, each first surrounding wall surrounds a pixel opening, each second surrounding wall surrounds the outer side of each first surrounding wall, overflow openings are formed at intervals at the end parts of the second surrounding walls, the first flow guide wall and the overflow openings are arranged oppositely, each flow guide channel comprises a first flow guide channel formed between each first surrounding wall and each second surrounding wall and a plurality of second flow guide channels formed between each heat dissipation unit and each first flow guide wall, and the first flow guide channels are communicated with the second flow guide channels through the overflow openings, the second flow guide channel is communicated with the liquid storage tank, the pixel unit is arranged in the pixel opening, and the first direction is intersected with the second direction.
2. The display substrate of claim 1, wherein: the heat dissipation unit further comprises a first driving electrode arranged in the first surrounding wall and a second driving electrode arranged in the second surrounding wall, and the first driving electrode and the second driving electrode are arranged to drive the first surrounding wall and/or the second surrounding wall to extrude the first flow guide channel after opposite voltages are applied.
3. The display substrate of claim 2, wherein: the first driving electrode comprises a plurality of sub driving electrodes arranged along the circumferential direction of the first surrounding wall, and the plurality of sub driving electrodes correspond to the second driving electrode in position.
4. The display substrate of claim 3, wherein: the first wall comprises a first sub-wall and a second sub-wall which extend along the first direction and are arranged at intervals along the second direction, and a third sub-wall and a fourth sub-wall which extend along the second direction and are arranged at intervals along the first direction, the first sub-wall, the second sub-wall, the third sub-wall and the fourth sub-wall define a pixel opening, the second wall is arranged at the outer side of the second sub-wall, the third sub-wall and the fourth sub-wall in a surrounding manner, the first sub-wall is adjacent to the first flow guide wall, the plurality of sub-drive electrodes comprise a first sub-drive electrode arranged in the third sub-wall, a second sub-drive electrode arranged in the second sub-wall and a third sub-drive electrode arranged in the fourth sub-wall, and the first sub-drive electrodes of the plurality of heat dissipation units in the same heat dissipation area are led out to the first sub-drive end of the peripheral area through a lead wire, the second sub-driving electrodes of the plurality of heat dissipation units are led out to the second driving end of the peripheral area through leads, and the third sub-driving electrodes of the plurality of heat dissipation units are led out to the third driving end of the peripheral area through leads.
5. The display substrate of claim 1, wherein: the first surrounding wall faces to one side of the second surrounding wall and/or the second surrounding wall faces to one side of the first surrounding wall and is provided with a plurality of extrusion protrusions at intervals.
6. The display substrate of claim 1, wherein: a third driving electrode is arranged inside one side, adjacent to the first flow guide wall, of the first surrounding wall, a fourth driving electrode extending along the first direction is arranged in the first flow guide wall, and the fourth driving electrode and the third driving electrode are arranged to drive the first flow guide wall and/or the first surrounding wall to extrude the second flow guide channel after opposite voltages are applied, so that the cooling liquid in the second flow guide channel flows to the liquid storage tank.
7. The display substrate of claim 6, wherein: the fourth drive electrode includes a plurality of fourth sub-drive electrodes that set up along first direction interval, the fourth sub-drive electrode with the third drive electrode one-to-one, display substrate still include with the thin film transistor of fourth sub-drive electrode one-to-one and drive scanning connecting wire and be a plurality of the drive power cord of fourth sub-drive electrode power supply, thin film transistor includes control electrode, first pole and second pole, the control electrode with correspond drive scanning connecting wire is connected, the second pole with correspond the fourth sub-drive electrode is connected, and is same thin film transistor's in the radiating area first pole with drive power cord connects.
8. The display substrate of claim 7, wherein: the first flow guide wall is provided with a plurality of pressurizing bulges towards one side of the first surrounding wall, and the pressurizing bulges are arranged at intervals along the first direction and are in one-to-one correspondence with the fourth sub-driving electrodes.
9. The display substrate of claim 6, wherein: the heat dissipation area still includes second water conservancy diversion wall, the second water conservancy diversion is located peripheral region and set up in with the reservoir is adjacent on the second leg, the second water conservancy diversion wall with form the intercommunication between the first water conservancy diversion wall the second water conservancy diversion passageway with the interface channel of reservoir, first water conservancy diversion wall is provided with first enclosed construction, be provided with the second enclosed construction on the second water conservancy diversion wall, first enclosed construction and second enclosed construction set up to laminate each other in order to seal under the drive of opposite voltage the interface channel.
10. The display substrate of claim 9, wherein: the peripheral area comprises a first peripheral area and a second peripheral area which are arranged along a first direction, the first peripheral area is located on a first side of the display area, the second peripheral area is located on a second side, opposite to the first side, of the display area, the liquid storage tank comprises a first liquid storage tank located on the first peripheral area and a second liquid storage tank located on the second peripheral area, the connecting channel comprises a first connecting channel communicated with the first liquid storage tank and a second connecting channel communicated with the second liquid storage tank, and the first sealing structure and the second sealing structure are arranged in the first connecting channel and the second connecting channel.
11. The display substrate according to any one of claims 1 to 10, wherein: the display substrate further comprises a metal heat dissipation layer arranged on the substrate and located in the peripheral area, and the orthographic projection of the metal heat dissipation layer on the substrate covers the orthographic projection of the liquid storage tank on the substrate.
12. The display substrate according to any one of claims 1 to 10, wherein: the display substrate further comprises a cover plate and a leakage-proof plug arranged on one side of the cover plate facing the heat dissipation structure layer, the heat dissipation structure layer faces the cover plate, an opening exposing the flow guide channel and the liquid storage tank is formed in one side of the cover plate, and the leakage-proof plug seals the opening.
13. A display device comprising the display substrate according to any one of claims 1 to 12.
14. A method for preparing a display substrate is characterized by comprising the following steps:
forming a heat radiation structure layer and a pixel unit on a substrate;
the heat dissipation structure layer comprises a flow guide channel, a liquid storage tank and cooling liquid, the display substrate comprises a display area and a peripheral area located on the periphery of the display area, the pixel unit is located in the display area, the flow guide channel surrounds the pixel unit, the liquid storage tank is located in the peripheral area and communicated with the flow guide channel, and the flow guide channel and the liquid storage tank are filled with the cooling liquid; the heat dissipation structure layer comprises a plurality of heat dissipation areas which extend along a first direction and are arranged along a second direction, at least one heat dissipation area comprises a plurality of heat dissipation units which are arranged along the first direction and a first flow guide wall which extends along the first direction, the heat dissipation units are positioned in the display area, each heat dissipation unit comprises a first surrounding wall and a second surrounding wall, each first surrounding wall surrounds a pixel opening, each second surrounding wall surrounds the outer side of each first surrounding wall, overflow openings are formed at intervals at the end parts of the second surrounding walls, the first flow guide wall and the overflow openings are arranged oppositely, each flow guide channel comprises a first flow guide channel formed between each first surrounding wall and each second surrounding wall and a plurality of second flow guide channels formed between each heat dissipation unit and each first flow guide wall, and the first flow guide channels are communicated with the second flow guide channels through the overflow openings, the second flow guide channel is communicated with the liquid storage tank, the pixel unit is arranged in the pixel opening, and the first direction is intersected with the second direction.
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN113658973A (en) * 2021-07-16 2021-11-16 佛山市国星光电股份有限公司 Display panel, preparation method thereof and display device
CN115843169B (en) * 2022-11-29 2023-11-10 惠科股份有限公司 Display device and electronic apparatus

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100638141B1 (en) * 2005-06-23 2006-10-25 엘지전자 주식회사 Apparatus for fabricating electro luminescence device
CN1991459A (en) * 2005-12-28 2007-07-04 株式会社半导体能源研究所 Display device
CN201093358Y (en) * 2007-09-28 2008-07-30 深圳市同洲电子股份有限公司 LED display screen unit
CN101932219A (en) * 2009-06-26 2010-12-29 赫克斯科技股份有限公司 Water-cooling device and manufacturing method thereof
CN102005447A (en) * 2010-09-01 2011-04-06 杨东佐 LED (Light Emitting Diode) integrated structure with cooler
CN102315184A (en) * 2010-06-30 2012-01-11 株式会社电装 Semiconductor device
CN105814735A (en) * 2014-02-28 2016-07-27 宝马股份公司 Method for producing an assembly from an energy storage module, and a cooling element and assembly
WO2016153488A1 (en) * 2015-03-24 2016-09-29 Hewlett Packard Enterprise Development Lp Liquid cooling with a cooling chamber
CN104269388B (en) * 2010-12-22 2017-04-12 美国亚德诺半导体公司 Vertically integrated systems
CN108240720A (en) * 2017-10-30 2018-07-03 云南凯思诺低温环境技术有限公司 A kind of metallic membrane heat exchanger
CN108449048A (en) * 2018-05-21 2018-08-24 江苏昊科汽车空调有限公司 The photovoltaic panel of cycle back of the body heat dissipation
CN109944779A (en) * 2019-03-01 2019-06-28 浙江师范大学 A kind of CUP water-cooling system circulating pump
CN110809359A (en) * 2019-11-13 2020-02-18 重庆大学 Controllable multipoint active fluid heat dissipation system integrated on PCB
CN111223838A (en) * 2020-01-10 2020-06-02 株洲中车时代半导体有限公司 Insulating welt of high-efficient heat dissipation
CN210896385U (en) * 2020-02-10 2020-06-30 深圳市洲明科技股份有限公司 A high-efficient heat dissipation face guard for LED display screen
CN211265470U (en) * 2020-03-12 2020-08-14 重庆康佳光电技术研究院有限公司 LED display backboard convenient for heat dissipation
CN211349986U (en) * 2020-01-13 2020-08-25 湖北晶锐达电子科技有限公司 High-efficient radiating booth apart from LED display screen
CN111655007A (en) * 2020-06-22 2020-09-11 云谷（固安）科技有限公司 Display screen heat abstractor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8469533B2 (en) * 2010-02-05 2013-06-25 Beijing AVC Technology Research Center Co., Ltd. Water-cooling heat dissipation system for LED signboard

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100638141B1 (en) * 2005-06-23 2006-10-25 엘지전자 주식회사 Apparatus for fabricating electro luminescence device
CN1991459A (en) * 2005-12-28 2007-07-04 株式会社半导体能源研究所 Display device
CN201093358Y (en) * 2007-09-28 2008-07-30 深圳市同洲电子股份有限公司 LED display screen unit
CN101932219A (en) * 2009-06-26 2010-12-29 赫克斯科技股份有限公司 Water-cooling device and manufacturing method thereof
CN102315184A (en) * 2010-06-30 2012-01-11 株式会社电装 Semiconductor device
CN102005447A (en) * 2010-09-01 2011-04-06 杨东佐 LED (Light Emitting Diode) integrated structure with cooler
CN104269388B (en) * 2010-12-22 2017-04-12 美国亚德诺半导体公司 Vertically integrated systems
CN105814735A (en) * 2014-02-28 2016-07-27 宝马股份公司 Method for producing an assembly from an energy storage module, and a cooling element and assembly
WO2016153488A1 (en) * 2015-03-24 2016-09-29 Hewlett Packard Enterprise Development Lp Liquid cooling with a cooling chamber
CN108240720A (en) * 2017-10-30 2018-07-03 云南凯思诺低温环境技术有限公司 A kind of metallic membrane heat exchanger
CN108449048A (en) * 2018-05-21 2018-08-24 江苏昊科汽车空调有限公司 The photovoltaic panel of cycle back of the body heat dissipation
CN109944779A (en) * 2019-03-01 2019-06-28 浙江师范大学 A kind of CUP water-cooling system circulating pump
CN110809359A (en) * 2019-11-13 2020-02-18 重庆大学 Controllable multipoint active fluid heat dissipation system integrated on PCB
CN111223838A (en) * 2020-01-10 2020-06-02 株洲中车时代半导体有限公司 Insulating welt of high-efficient heat dissipation
CN211349986U (en) * 2020-01-13 2020-08-25 湖北晶锐达电子科技有限公司 High-efficient radiating booth apart from LED display screen
CN210896385U (en) * 2020-02-10 2020-06-30 深圳市洲明科技股份有限公司 A high-efficient heat dissipation face guard for LED display screen
CN211265470U (en) * 2020-03-12 2020-08-14 重庆康佳光电技术研究院有限公司 LED display backboard convenient for heat dissipation
CN111655007A (en) * 2020-06-22 2020-09-11 云谷（固安）科技有限公司 Display screen heat abstractor

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