CN112103404A - Flexible OLED device and manufacturing method thereof - Google Patents
Flexible OLED device and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 229920001721 polyimide Polymers 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000031700 light absorption Effects 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000006096 absorbing agent Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011260 aqueous acid Substances 0.000 claims 1
- 125000005605 benzo group Chemical group 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 124
- 239000010409 thin film Substances 0.000 description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 9
- 238000003763 carbonization Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical class C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- 150000008360 acrylonitriles Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229940124543 ultraviolet light absorber Drugs 0.000 description 2
- OWQPOVKKUWUEKE-UHFFFAOYSA-N 1,2,3-benzotriazine Chemical compound N1=NN=CC2=CC=CC=C21 OWQPOVKKUWUEKE-UHFFFAOYSA-N 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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Abstract
The invention discloses a flexible OLED device and a manufacturing method thereof, wherein the flexible OLED device comprises a substrate, an ultraviolet light absorption film, a polyimide film and an OLED device layer; the ultraviolet light absorption film is arranged on one surface of the substrate; the polyimide film is arranged on the ultraviolet light absorption film; the OLED device layer is arranged on the polyimide film. According to the technical scheme, the ultraviolet light absorption film can strongly and selectively absorb high-energy laser (such as ultraviolet light emitted by a laser emitter), so that the OLED device layer is protected, the stripping quality of polyimide can be improved, and the finished product yield of the flexible OLED device is maintained.
Description
Technical Field
The invention relates to the field of OLED devices, in particular to a flexible OLED device and a manufacturing method thereof.
Background
An Organic Light Emitting Diode (abbreviated as OLED) display has the characteristics of low power consumption, wide viewing angle, high definition and contrast, fast response speed, wide use temperature range, ultra-Light weight, thinness, good shock resistance and the like, and is considered as a display device with the most development potential in the industry.
At present, a flexible OLED device stripping method adopts a Laser Lift-off (LLO) technology, wherein LLO is a technology for separating a Polyimide (PI) film from a glass substrate, and the principle is that Laser irradiates the Polyimide film from the back of the substrate.
Referring to fig. 1, a conventional flexible OLED device includes a substrate, a polyimide film, and an OLED device layer sequentially disposed from bottom to top. In the laser separation technology, when the laser energy is too low, the carbonization degree of the polyimide film is not thorough, the PI polyimide film and the substrate are directly difficult to separate, and the phenomenon that the polyimide film and the substrate are adhered and pulled occurs. And when laser irradiates on the polyimide film, partial laser can directly enter the device end through the polyimide film, so that the risk of failure of the OLED device exists, and the service life of the OLED device and the yield of products are influenced.
In application No. CN201911017253.9 entitled flexible substrate, display panel, and method of manufacturing a display panel, a metal peeling layer is provided on a substrate. Similarly, the metal peeling layer cannot block damage caused by the LLO (Laser lift off) technique.
Disclosure of Invention
Therefore, a flexible OLED device and a manufacturing method thereof are needed to solve the problem of incomplete separation of the substrate and the polyimide film by using a laser separation technology.
In order to achieve the above object, the present embodiment provides a flexible OLED device, including a substrate, an ultraviolet light absorbing film, a polyimide film, and an OLED device layer;
the ultraviolet light absorption film is arranged on one surface of the substrate and comprises an ultraviolet light absorbent;
the polyimide film is arranged on the ultraviolet light absorption film;
the OLED device layer is arranged on the polyimide film.
Further, a first inorganic thin film is included;
the first inorganic film is arranged on one surface of the substrate, and the ultraviolet light absorption film is arranged in the groove on the first inorganic film.
Further, the ultraviolet light reflection film is also included;
the ultraviolet light reflection film is arranged on the polyimide film, the ultraviolet light reflection film is of a concave-convex structure, and the ultraviolet light reflection film is used for reflecting ultraviolet light to the ultraviolet light absorption film.
Further, the ultraviolet light reflecting film includes a second inorganic film and a third inorganic film;
the second inorganic film is arranged on the polyimide film, and the upper surface of the second inorganic film is of a concave-convex structure;
the third inorganic film is arranged on the second inorganic film and is used for filling and leveling the concave part of the second inorganic film.
Further, the ultraviolet absorber is a water-like acid ester, benzophenone or benzo-benzo group.
The embodiment also provides a manufacturing method of the flexible OLED device, which comprises the following steps:
manufacturing an ultraviolet light absorption film on one surface of a substrate, wherein the ultraviolet light absorption film comprises an ultraviolet light absorbent;
manufacturing a polyimide film;
manufacturing an OLED device layer;
and emitting ultraviolet light by using a laser emitter at the other side of the substrate, and irradiating the ultraviolet light to the area of the ultraviolet light absorption film.
Further, after the polyimide film is manufactured and before the OLED device layer is manufactured, the method further comprises the following steps:
and manufacturing an ultraviolet light reflecting film, wherein the ultraviolet light reflecting film is of a concave-convex structure and is used for reflecting ultraviolet light to the direction of the ultraviolet light absorbing film.
Further, the manufacturing of the ultraviolet light reflection film, wherein the ultraviolet light reflection film is of a concave-convex structure, comprises the following specific steps:
manufacturing a second inorganic film, covering the polyimide film with the second inorganic film, and etching the second inorganic film to enable the second inorganic film to be of a concave-convex structure;
and manufacturing a third inorganic film, wherein the third inorganic film is used for filling and leveling the concave part of the second inorganic film.
Further, when the ultraviolet light absorption film is manufactured on one surface of the substrate, the method further comprises the following steps:
firstly, manufacturing a first inorganic film on a substrate;
manufacturing a groove on the first inorganic film;
and manufacturing an ultraviolet light absorption film at the groove of the first inorganic film.
Furthermore, the ultraviolet light absorption film is manufactured by evaporating an ultraviolet light absorber to cover the whole surface of the substrate.
Different from the prior art, the ultraviolet light absorption film is manufactured on the substrate in the technical scheme, and the ultraviolet light absorption film can strongly and selectively absorb high-energy laser (such as ultraviolet light emitted by a laser emitter). The ultraviolet light absorption film has high-intensity light resistance, and the energy of the ultraviolet light is absorbed and transferred to the polyimide film by heat or low-energy radiation in the form of energy transfer, so that the contact surface of the ultraviolet light absorption film and the polyimide film is carbonized. After carbonization, the polyimide film can be separated from the glass substrate. The stripping quality of the polyimide can be improved, and the finished product yield of the flexible OLED device can be maintained.
Drawings
FIG. 1 is a schematic cross-sectional structure diagram of a flexible OLED device according to the prior art;
FIG. 2 is a schematic cross-sectional view of a flexible OLED device according to an embodiment;
FIG. 3 is a flowchart illustrating a process of fabricating a flexible OLED device on a substrate according to an embodiment;
FIG. 4 is a schematic cross-sectional view of a flexible OLED device according to the second embodiment;
fig. 5 is a process flow diagram of fabricating a flexible OLED device on a substrate according to the second embodiment.
Description of reference numerals:
1. an OLED device layer;
2. a polyimide film;
3. a substrate;
4. a first inorganic thin film;
5. an ultraviolet light absorbing film.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 5, the present application provides a method for manufacturing a flexible OLED device, in an embodiment, referring to fig. 3, including the following steps: the substrate 3 may be a flexible glass substrate 3 or a plastic substrate 3, preferably a glass substrate 3, providing the substrate 3 required for the process. Firstly, manufacturing a first inorganic film 4 on one surface of a substrate 3; specifically, an inorganic thin film material, such as silicon nitride, silicon dioxide, etc., may be deposited by a chemical vapor deposition (PECVD) or a Plasma Enhanced Atomic Layer Deposition (PEALD) method, so as to form the first inorganic thin film 4 on one side of the substrate 3, and the structure is shown in fig. 2. Preferably, the first inorganic thin film 4 is made of a material having similar characteristics, such as silicon oxide, or aluminum oxide. The thickness of the first inorganic thin film 4 is 0.2um (micrometer) to 0.4um, preferably, the thickness of the first inorganic thin film 4 is 0.3 um.
Then, a groove is formed in the first inorganic film 4, and the groove of the first inorganic film 4 is used for accommodating the ultraviolet light absorption film 5; specifically, a layer of photoresist is coated on the first inorganic thin film 4, the photoresist is patterned, that is, the photoresist is exposed and developed, and after the development, the position where the groove is to be made is opened. Then, the first inorganic film 4 is etched (e.g., dry etching) using the photoresist as a mask to form a groove. And after the groove is manufactured, removing the photoresist. Note that, the cross-sectional area of the groove in the first inorganic thin film 4 is trapezoidal, rectangular, square, circular, or triangular, and the groove bottom of the groove may be the surface of the substrate 3 or the lower portion of the first inorganic thin film 4.
Manufacturing an ultraviolet absorption film 5 at the groove of the first inorganic film 4, wherein the ultraviolet absorption layer is used for eliminating the adhesion and pulling phenomena of the polyimide film 2 and the substrate 3; specifically, by using a vapor deposition device, the ultraviolet absorber is heated by a heating device (such as a crucible) and is vapor deposited in the groove of the first inorganic film 4, so that the ultraviolet absorbing film 5 is formed in the groove of the first inorganic film 4, and the structure is as shown in fig. 2. The method of selectively evaporating the ultraviolet absorber in the groove of the first inorganic thin film 4 may be to coat a photoresist on the first inorganic thin film 4, then etch and remove the photoresist at the groove position, and the ultraviolet absorber evaporated on the photoresist is also removed after cleaning the photoresist, so that only the ultraviolet absorbing thin film 5 in the groove of the first inorganic thin film 4 is left. It should be noted that the ultraviolet light absorbing film 5 is a water-like acid ester, benzophenone, benzo-benzo group, substituted acrylonitrile, triazine, or hindered amine.
In the prior art, the energy of ultraviolet light cannot be comprehensively concentrated on the contact interface of the substrate 3 and the polyimide film 2, the carbonization degree of the polyimide film 2 is not thorough, and the polyimide film 2 and the substrate 3 are difficult to separate directly. In order to overcome the current bottleneck of the flexible stripping technology, the ultraviolet light absorbing film 5 is firstly manufactured on the substrate 3, and the ultraviolet light absorbing film 5 can strongly and selectively absorb high-energy laser (such as ultraviolet light emitted by a laser emitter). The ultraviolet light absorbing film 5 itself has high-intensity light resistance, and transfers the energy of the ultraviolet light to the polyimide film 2 in the form of energy transfer as heat or low-energy radiation, so that the contact surface of the ultraviolet light absorbing film 5 and the polyimide film 2 is carbonized. After carbonization, the polyimide film 2 can be separated from the glass substrate 3, and the polyimide film 2 and the OLED device layer 1 thereon form a flexible OLED device. According to the technical scheme, the stripping quality of the polyimide can be improved, and the finished product yield of the flexible OLED device is maintained.
The wavelength of the ultraviolet light absorbed by the ultraviolet light absorbing film 5 is 290nm (nanometers) to 1460nm, the wavelength of the ultraviolet light emitted from the laser emitter is 355nm, and the output power of the laser emitter is not limited to 3W (watts) to 15W, and is preferably 8W. After the ultraviolet light absorption film 5 is arranged, the output of the energy of the laser emitter can be reduced, and the service life of the laser is prolonged.
Preferably, before the ultraviolet light absorption film 5 is manufactured, the substrate 3 is cleaned and dried, so that the substrate 3 keeps better cleanliness, and the method has positive significance for improving the performance of devices.
In the first embodiment, after the ultraviolet light absorption film 5 is manufactured, a Polyimide (abbreviated as PI) film is manufactured; specifically, polyimide is coated on the first inorganic film 4, and after drying, a solid polyimide film 2 is formed on the first inorganic film 4, and the structure is shown in fig. 2. The thickness of the polyimide film 2 is 1.5 um-3 um. Preferably, the thickness of the polyimide film 2 is 2 um. In the prior art, a flexible OLED device is separated from the substrate 3 by means of the polyimide film 2, and an OLED device layer 1 is also disposed above the polyimide film 2.
In the first embodiment, an OLED device layer 1 is fabricated; specifically, the OLED device layer 1 includes a thin film transistor, an anode, an OLED light emitting layer, a cathode, and the like. The thin film transistor may be a top gate structure or a bottom gate structure. The anode is connected with the thin film transistor, the anode is connected with the OLED light emitting layer, and the OLED light emitting layer is connected with the cathode. Since the OLED device layer 1 is a conventional technology, it is not the point of the present embodiment, and will not be described in detail here.
In order to solve the problem that ultraviolet light in other wave bands can penetrate through the polyimide film 2 and enter the OLED device layer 1, the quality of materials of the OLED device layer 1 is changed due to the entering ultraviolet light, and the OLED device can be failed in serious conditions, before the step of manufacturing the OLED device layer 1, the method further comprises the step of manufacturing an ultraviolet light reflection film on the polyimide film 2. The ultraviolet light reflecting film includes a second inorganic film; a second inorganic film (not shown in the figure) having a concave-convex structure is formed on the polyimide film 2; specifically, a chemical vapor deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) method may be used to deposit an inorganic thin film material, such as silicon nitride, silicon dioxide, etc., so as to form a thin second inorganic thin film on the polyimide thin film 2. The thickness of the second inorganic thin film is smaller than that of the first inorganic thin film 4. Preferably, the second inorganic thin film is silica. The concave-convex structure of the second inorganic film may be formed by etching a plurality of holes in the second inorganic film, wherein the holes have a cross-sectional shape such as a circle, a square, a triangle, or a polygon. The relief structure may also be wave-shaped, saw-toothed or of another geometrical shape. The side walls and the bottom of the holes (i.e. the concave regions of the concave-convex structures) can reflect the redundant laser light to the direction of the ultraviolet light absorption film 5.
Fabricating a third inorganic thin film (not shown in the drawing) on the second inorganic thin film; the manufacturing process of the third inorganic thin film is the same as that of the second inorganic thin film, and the upper surface of the third inorganic thin film is used for bearing the OLED device layer 1. The third inorganic thin film is also a thin film, and the third inorganic thin film is used for filling the concave parts of the concave-convex structure of the second inorganic thin film. Preferably, the upper surface of the third inorganic thin film (or the second inorganic thin film) is flat and parallel to one surface of the substrate 3 (the surface of the substrate 3 in contact with the ultraviolet light absorption film 5). Preferably, the third inorganic thin film is made of a material having similar characteristics, such as silicon nitride or silicon oxide. The second inorganic film and the third inorganic film form a high-reflection interface, which can reflect redundant laser to the ultraviolet light absorption film 5, thereby avoiding the influence of ultraviolet light on the OLED device layer 1 above.
Preferably, the second inorganic thin film is different from the third inorganic thin film.
At the other side of the substrate 3, ultraviolet light is emitted using a laser emitter and is irradiated to the area of the ultraviolet light absorption film 5. In general, when the peeling process is performed, a laser emitter is used to emit ultraviolet light in the direction of the back surface of the substrate 3, and an ultraviolet light spot emitted from the laser emitter is irradiated on the ultraviolet light absorption film 5, so that the temperature of the absorber film rises and the heat is conducted to the polyimide film 2, thereby carbonizing the polyimide film 2, and peeling the carbonized polyimide film 2 from the glass substrate 3.
In the second embodiment, the second embodiment is different from the first embodiment only in that the first embodiment requires to fabricate the first inorganic film 4 and fabricate the ultraviolet light absorbing film 5 in the groove of the first inorganic film 4, and the second embodiment directly fabricates the ultraviolet light absorbing film 5 on one side of the substrate 3 without fabricating the first inorganic film 4; specifically, evaporation equipment is adopted, the ultraviolet absorber is heated through a heating device (such as a crucible), the whole surface of the ultraviolet absorber is coated on the surface of the substrate through evaporation, an ultraviolet absorbing film 5 is formed, and after the ultraviolet absorbing film 5 is completely coated on the surface of the substrate, the influence of ultraviolet rays on the performance of the OLED device caused by the fact that the ultraviolet rays penetrate through the OLED device above the substrate is reduced. Then the polyimide film 2 is disposed on the upper surface of the ultraviolet light absorption film 5, and the structure is as shown in fig. 4, and the steps of the second embodiment are as shown in fig. 5.
The application also provides a flexible OLED device, which mainly comprises two embodiments, wherein in the first embodiment, the flexible OLED device comprises a substrate 3, an ultraviolet light absorption film 5, a polyimide film 2 and an OLED device layer 1. The substrate 3 may be a flexible glass substrate 3 or a plastic substrate 3, preferably a glass substrate 3, providing the substrate 3 required for the process. Be provided with on the one side of base plate 3 ultraviolet absorption film 5, ultraviolet absorption film contains the ultraviolet absorber, and the ultraviolet absorption layer is used for eliminating the phenomenon that polyimide film 2 and 3 adhesion of base plate are dragged. The ultraviolet light absorption film 5 is provided with a Polyimide (abbreviated as PI) film, and the thickness of the Polyimide film 2 is 1.5um to 3 um. Preferably, the thickness of the polyimide film 2 is 2 um. The OLED device layer 1 is disposed on the polyimide film.
In the prior art, a flexible OLED device is separated from the substrate 3 by means of the polyimide film 2, and an OLED device layer 1 is also disposed above the polyimide film 2. The energy of ultraviolet light can not be fully concentrated on the contact interface of the substrate and the polyimide film, the carbonization degree of the polyimide film is not thorough, and the polyimide film and the substrate are difficult to separate directly. In order to overcome the current bottleneck of the flexible stripping technology, the above technical solution is to arrange an ultraviolet light absorption film on the substrate, and the ultraviolet light absorption film can strongly and selectively absorb high-energy laser (such as ultraviolet light emitted by a laser emitter). The ultraviolet light absorption film has high-intensity light resistance, and the energy of the ultraviolet light is absorbed and transferred to the polyimide film by heat or low-energy radiation in the form of energy transfer, so that the contact surface of the ultraviolet light absorption film and the polyimide film is carbonized. After carbonization, the polyimide film can be separated from the glass substrate. According to the technical scheme, the stripping efficiency of the polyimide can be improved, and the finished product yield of the flexible OLED device can be maintained.
The ultraviolet light absorbing film 5 may contain an ultraviolet light absorber of a water-like acid ester, benzophenone, benzo-triazine, substituted acrylonitrile, triazine, or hindered amine.
Preferably, the second inorganic thin film is different from the third inorganic thin film.
In the first embodiment, the OLED device layer 1 includes a thin film transistor, an anode, an OLED light emitting layer, a cathode, and the like. The thin film transistor may be a top gate structure or a bottom gate structure. The anode is connected with the thin film transistor, the anode is connected with the OLED light emitting layer, and the OLED light emitting layer is connected with the cathode. Since the OLED device layer 1 is a conventional technology, it is not the point of the present embodiment, and will not be described in detail here.
In the second embodiment, the difference between the second embodiment and the first embodiment is only that the ultraviolet light absorption film 5 is disposed in the groove on the first inorganic film 4. Specifically, the ultraviolet light absorption film further comprises a first inorganic film 4, wherein the first inorganic film 4 is arranged on one surface of the substrate 3, and the ultraviolet light absorption film 5 is arranged in a groove on the first inorganic film 4. Note that, the cross-sectional area of the groove in the first inorganic thin film 4 is trapezoidal, rectangular, square, circular, or triangular, and the groove bottom of the groove may be the surface of the substrate 3 or the lower portion of the first inorganic thin film 4. Preferably, the first inorganic thin film 4 is silicon dioxide. The thickness of the first inorganic thin film 4 is 0.2um (micrometer) to 0.4um, preferably, the thickness of the first inorganic thin film 4 is 0.3 um.
In the third embodiment, in order to further solve the problem that ultraviolet light in other wavelength bands enters the OLED device layer 1 through the polyimide film 2, so that the entered ultraviolet light causes the material of the OLED device layer 1 to change, and if the material is serious, the OLED device is caused to fail, the ultraviolet light reflection film is arranged. The ultraviolet light reflection film comprises a second inorganic film, the second inorganic film is arranged on the polyimide film 2, and the second inorganic film is of a concave-convex structure. The concave-convex structure of the second inorganic film can be formed by etching a plurality of holes on the second inorganic film, wherein the cross section of each hole is in a shape of a circle, a square, a triangle or a polygon, and the concave-convex structure can also be in a wave shape, a sawtooth shape or other geometric shapes. The side walls and the bottom of the holes (i.e. the concave regions of the concave-convex structures) can reflect the redundant laser light to the direction of the ultraviolet light absorption film 5. The ultraviolet light reflection film can reflect redundant ultraviolet light back to the direction of the ultraviolet light absorption film to protect the OLED device layer.
In order to fill in irregularities on the second inorganic film, the ultraviolet light reflecting film further includes a third inorganic film disposed on the second inorganic film. The third inorganic thin film is also a thin film, and the third inorganic thin film is used for filling the concave parts of the concave-convex structure of the second inorganic thin film. Preferably, the upper surface of the third inorganic thin film is flat and parallel to the surface of the substrate 3. The second inorganic film and the third inorganic film form a high-reflection interface, which can reflect redundant laser to the ultraviolet light absorption film 5, thereby avoiding the influence of ultraviolet light on the OLED device layer 1 above.
Preferably, the second inorganic thin film is made of a material having similar characteristics, such as silicon oxide or silicon nitride.
Preferably, the third inorganic thin film is made of a material having similar characteristics, such as silicon oxide or silicon nitride.
Preferably, the second inorganic thin film is different from the third inorganic thin film.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. A flexible OLED device is characterized by comprising a substrate, an ultraviolet light absorption film, a polyimide film and an OLED device layer;
the ultraviolet light absorption film is arranged on one surface of the substrate and comprises an ultraviolet light absorbent;
the polyimide film is arranged on the ultraviolet light absorption film;
the OLED device layer is arranged on the polyimide film.
2. A flexible OLED device according to claim 1 further comprising a first inorganic film;
the first inorganic film is arranged on one surface of the substrate, and the ultraviolet light absorption film is arranged in the groove on the first inorganic film.
3. A flexible OLED device according to claim 1 further including an ultraviolet light reflective film;
the ultraviolet light reflection film is arranged on the polyimide film, the ultraviolet light reflection film is of a concave-convex structure, and the ultraviolet light reflection film is used for reflecting ultraviolet light to the ultraviolet light absorption film.
4. A flexible OLED device according to claim 3 wherein said uv-reflective film includes a second inorganic film and a third inorganic film;
the second inorganic film is arranged on the polyimide film, and the upper surface of the second inorganic film is of a concave-convex structure;
the third inorganic film is arranged on the second inorganic film and is used for filling and leveling the concave part of the second inorganic film.
5. A flexible OLED device according to claim 1 wherein the uv absorber is an aqueous acid ester, benzophenone, or benzo.
6. A manufacturing method of a flexible OLED device is characterized by comprising the following steps:
manufacturing an ultraviolet light absorption film on one surface of a substrate, wherein the ultraviolet light absorption film comprises an ultraviolet light absorbent;
manufacturing a polyimide film;
manufacturing an OLED device layer;
and emitting ultraviolet light by using a laser emitter at the other side of the substrate, and irradiating the ultraviolet light to the area of the ultraviolet light absorption film.
7. The method of claim 6, further comprising the following steps after the polyimide film is formed and before the OLED device layer is formed:
and manufacturing an ultraviolet light reflecting film, wherein the ultraviolet light reflecting film is of a concave-convex structure and is used for reflecting ultraviolet light to the direction of the ultraviolet light absorbing film.
8. The method according to claim 7, wherein the step of manufacturing the ultraviolet light reflection film having a concave-convex structure comprises:
manufacturing a second inorganic film, covering the polyimide film with the second inorganic film, and etching the second inorganic film to enable the second inorganic film to be of a concave-convex structure;
and manufacturing a third inorganic film, wherein the third inorganic film is used for filling and leveling the concave part of the second inorganic film.
9. The method of claim 6, wherein when the UV-absorbing film is formed on one surface of the substrate, the method further comprises the following steps:
firstly, manufacturing a first inorganic film on a substrate;
manufacturing a groove on the first inorganic film;
and manufacturing an ultraviolet light absorption film at the groove of the first inorganic film.
10. The method for manufacturing a flexible OLED device according to claim 6, wherein the UV-absorbing film is formed by coating a UV absorber on the surface of the substrate by evaporation.
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| CN114613920A (en) * | 2022-03-01 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Flexible OLED display panel and manufacturing method thereof |
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