CN112072895A - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
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- CN112072895A CN112072895A CN202010989604.9A CN202010989604A CN112072895A CN 112072895 A CN112072895 A CN 112072895A CN 202010989604 A CN202010989604 A CN 202010989604A CN 112072895 A CN112072895 A CN 112072895A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
- H02M7/08—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode arranged for operation in parallel
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
Abstract
The application relates to an intelligent power module, which comprises a bottom substrate, a DBC substrate, an upper control panel and a shell; the DBC substrate is welded on the base substrate, and a power topological circuit is integrated on the DBC substrate; the shell is fixedly arranged on the base substrate and forms a cavity for coating the DBC substrate and the power topological circuit together with the base substrate; the upper control board is covered on the shell, and a driving control circuit is integrated on one surface, facing the DBC insulating substrate, of the upper control board; the power topology circuit is electrically connected with the drive control circuit and is used for sequentially carrying out alternating current to direct current rectification, direct current to alternating current inversion and alternating current to direct current secondary rectification on the power frequency alternating current under the drive of the drive control circuit. Compared with the mode that the power topological circuit and the drive control circuit are integrated on the substrate in the related technology, the phenomenon that each circuit is far away from the power chip and distributed inductance is large is effectively avoided. The effect of highly integrated encapsulation is achieved, and the purpose of reducing the size of the intelligent power module is achieved.
Description
Technical Field
The application relates to the technical field of semiconductor processes, in particular to an intelligent power module.
Background
An Intelligent Power Module (IPM) is a Power semiconductor switch device with an IGBT as a core, and integrates the advantages of high current density, low saturation voltage, high voltage resistance of a large Power transistor (GTR), high input impedance of a field effect transistor, high switching frequency and low driving Power, and simultaneously, circuits such as logic, control, detection and protection are integrated therein. Compared with discrete devices, the power device has the characteristics of small volume, light weight, convenience in installation and use, high reliability and the like, and accords with the development direction of modularization, intellectualization and integration of the current power device.
At present, a typical power topology circuit of an inverter power supply in an inverter welding and cutting device generally comprises six power semiconductor modules including one diode rectifier module, two IGBT inverter modules and three FRD rectifier modules, and a control circuit of the power topology circuit comprises a grid isolation power supply, a grid driving circuit and a detection protection circuit board. The grid driving circuit and the detection protection circuit are far away from a power chip, and distributed inductance is large, so that the improvement of the working efficiency of the inverter circuit and the reduction of the size of the inverter power supply are limited to a certain extent.
Disclosure of Invention
In view of this, the present application provides an intelligent power module, which can effectively improve the working efficiency of an inverter circuit in the intelligent power module and reduce the size of the intelligent power module.
According to an aspect of the present application, there is provided a smart power module including a base substrate, a DBC substrate, an upper control board, and a housing;
the DBC substrate is welded on the base substrate, and a power topological circuit chip is integrated on the DBC substrate;
the shell is fixedly arranged on the base substrate and forms a cavity which covers the DBC substrate and the power topological circuit chip together with the base substrate;
the upper control board is covered on the shell, and a driving control circuit is integrated on one surface, facing the DBC substrate, of the upper control board;
the power topology circuit chip is electrically connected with the drive control circuit and used for sequentially carrying out alternating current to direct current rectification, direct current to alternating current inversion and alternating current to direct current secondary rectification on power frequency alternating current under the drive of the drive control circuit.
In one possible implementation manner, the power topology circuit chip comprises a rectifying circuit, an inverter circuit and a high-frequency rectifying circuit;
the rectifying circuit, the inverter circuit and the high-frequency rectifying circuit are electrically connected in sequence and are sequentially arranged on the DBC substrate from left to right.
In one possible implementation, the rectifier circuit includes three sets of diode chip sets connected in parallel;
each group of diode chip groups comprises two diodes connected in series;
and the connection point of every two diodes connected in series is used as an external electrode and is used for connecting the three phases of the power frequency alternating current.
In a possible implementation manner, the inverter circuit comprises four sets of inverse parallel circuits of an IGBT chip and an FRD chip, which are respectively a first chip set, a second chip set, a third chip set and a fourth chip set;
the first chipset is connected with the second chipset in series, and the third chipset is connected with the fourth chipset in series;
the first chipset and the second chipset connected in series are connected in parallel with the third chipset and the fourth chipset connected in series to form an H inverter bridge structure.
In one possible implementation manner, the high-frequency rectification circuit comprises two groups of rectification chips;
each group of the rectifying chips comprises a diode chip or a plurality of diode chips connected in parallel.
In a possible implementation manner, the power topology circuit chip further includes a temperature sensing device;
the temperature sensing device is arranged beside the inverter circuit and welded on the DBC substrate;
the rectification circuit, the inverter circuit and the high-frequency rectification circuit are electrically connected through bonding wires.
In one possible implementation manner, the driving control circuit comprises a gate isolation power supply, a gate driving chip and a detection protection circuit;
the gate isolation power supply, the gate driving chip and the detection protection circuit are all installed on the bottom surface of the upper control board, so that the gate isolation power supply 161, the gate driving chip and the detection protection circuit are packaged in a cavity formed by the upper control board, the shell and the bottom substrate.
In one possible implementation, the DBC substrate includes a first substrate and a second substrate;
the first substrate and the second substrate are arranged in a left-right structure, and the thermal conductivity of the second substrate is greater than that of the first substrate.
In one possible implementation, the first substrate is an alumina substrate and the second substrate is an aluminum nitride substrate.
In a possible implementation manner, the top surface of the upper control board is also provided with a communication socket;
the shell is also embedded with a main wiring terminal and an auxiliary wiring terminal, and the shell is bonded with the bottom substrate;
the main wiring terminal and the auxiliary wiring terminal correspond to an external electrode and an auxiliary electrode in the power topology circuit chip respectively.
The intelligent power module of the embodiment of the application integrates the power topology circuit and the temperature sensing device which are used for rectifying, inverting and secondarily rectifying the power frequency alternating current on the DBC substrate, integrates the drive control and protection circuit which is used for driving and controlling the power topology circuit on the upper control panel, and covers the upper control panel on the shell, and enables the upper control panel and the DBC substrate to be of an upper structure and a lower structure, so that the effect of highly integrated packaging of the power topology circuit chip and the drive control and protection circuit in the intelligent power module is achieved, the purposes of reducing the size, improving the performance and reducing the cost of the intelligent power module are finally achieved, the area of the intelligent power module of the embodiment of the application is only about three fifths of the original discrete module, and the integration level of the intelligent power module is effectively improved. Compared with the mode that the power topological circuit chip and the drive control circuit are integrated on the substrate in the related technology, the phenomenon that each circuit is far away from the power chip and distributed inductance is large is effectively avoided.
Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features, and aspects of the application and, together with the description, serve to explain the principles of the application.
FIG. 1 illustrates a schematic block circuit diagram of a smart power module of an embodiment of the present application;
fig. 2 shows a partial longitudinal sectional structural schematic diagram of a smart power module of an embodiment of the present application;
FIG. 3 shows a topological circuit diagram of a rectifier circuit in a smart power module of an embodiment of the present application;
fig. 4 shows a topological circuit diagram of an inverter circuit in a smart power module according to an embodiment of the present application;
fig. 5 shows a topological circuit diagram of a high-frequency rectification circuit in the smart power module of the embodiment of the present application;
fig. 6 shows a circuit diagram of a temperature sensing device in a smart power module of an embodiment of the present application;
fig. 7 shows a schematic top view of a smart power module according to an embodiment of the present application.
Detailed Description
Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers can indicate functionally identical or similar elements. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present application. It will be understood by those skilled in the art that the present application may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present application.
Fig. 1 shows a schematic block circuit diagram of a smart power module 100 according to an embodiment of the present application. Fig. 2 shows a partial longitudinal sectional structural diagram of the smart power module 100 according to an embodiment of the present application. As shown in fig. 1 and 2, the smart power module 100 of the embodiment of the present application includes: a bottom substrate 110, a DBC substrate 120, an upper control board 140, and a case 130. Wherein the DBC substrate 120 is soldered on the base substrate 110, and the power topology circuit chip 150 is integrated on the DBC substrate 120. The housing 130 is fixedly mounted on the base substrate 110, and forms a cavity with the base substrate 110 to enclose the DBC substrate 120 and the power topology circuit chip 150. The upper control board 140 is covered on the housing 130, and a driving control circuit 160 is integrated on a side of the upper control board 140 facing the DBC substrate 120. The power topology circuit chip 150 is electrically connected to the driving control circuit 160, and is configured to sequentially perform ac-to-dc rectification, dc-to-ac inversion, and ac-to-dc secondary rectification on the power frequency ac power under the driving of the driving control circuit 160.
Therefore, in the intelligent power module 100 of the embodiment of the present application, the power topology circuit chip 150 for rectifying and inverting the power frequency alternating current is integrated on the DBC substrate 120, the driving control circuit 160 for driving and controlling the power topology circuit chip 150 is integrated on the upper control board 140, and meanwhile, the upper control board 140 is covered on the housing 130, and meanwhile, the upper control board 140 and the DBC substrate 120 are in an up-and-down structure, so that an effect of highly integrated packaging of the power topology circuit chip 150 and the driving control circuit 160 in the intelligent power module 100 is achieved, and finally, a purpose of reducing the volume of the intelligent power module 100 is achieved, so that the area of the intelligent power module 100 of the embodiment of the present application is only about three fifths of that of an original discrete module, and the integration level of the intelligent power module 100 is also effectively improved. Compared with the method of integrating the power topology circuit chip 150 and the driving control circuit 160 on the substrate in the related art, the phenomenon that each circuit is far away from the power chip and the distributed inductance is large is effectively avoided. Meanwhile, high integration level packaging is beneficial to improving distribution parameters of modules, improving performance and reducing cost.
In one possible implementation, the power topology circuit chip 150 may be implemented by a rectifying circuit 151, an inverter circuit 152 and a high frequency rectifying circuit 153 which are electrically connected in sequence. That is, referring to fig. 1 and 2, a rectifying circuit 151, an inverter circuit 152 and a high-frequency rectifying circuit 153 are electrically connected in this order and are arranged in this order from left to right on the DBC substrate 120. The rectifier circuit 151, the inverter circuit 152 and the high-frequency rectifier circuit 153 are sequentially arranged from left to right, so that the use habit of people who go in and out from left to right is met.
The rectifying circuit 151 as an input rectifying portion may be implemented by a plurality of diodes. That is, in the smart power module 100 according to the embodiment of the present application, the rectifier circuit 151 may be a single-phase rectifier circuit or a three-phase rectifier circuit. When a single-phase rectifier circuit is used, the rectifier circuit 151 may be implemented as a single-phase bridge circuit. When a three-phase rectifier circuit is used, the rectifier circuit 151 may be designed as a three-phase bridge circuit structure. Here, it can be understood by those skilled in the art that the single-phase bridge circuit and the three-phase bridge circuit can be implemented by using a circuit structure conventional in the art, and a specific circuit structure can be designed by themselves.
For example, when implemented with a three-phase rectifier circuit, referring to fig. 3, the rectifier circuit 151 includes three sets of diode chips connected in parallel. Each group of diode chip sets comprises two diode chips connected in series, and the connection point of every two diode chips connected in series is used as an external electrode 1, an external electrode 2 and an external electrode 3 for connecting three phases of power frequency alternating current.
That is, in the smart power module 100 of the embodiment of the present application, the rectifying circuit 151 in the power topology circuit 150 may be implemented by employing 6 diodes. The 6 diodes are a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5 and a sixth diode D6, respectively. The first diode D1 is connected in series with the second diode D2, the third diode D3 is connected in series with the fourth diode D4, and the fifth diode D5 is connected in series with the sixth diode D6. Meanwhile, the first diode D1 and the second diode D2 are connected in series and then connected in parallel to the two ends of the third diode D3 and the fourth diode D4, and the third diode D3 and the fourth diode D4 are connected in series and then connected in parallel to the two ends of the fifth diode D5 and the sixth diode D6.
The connection point of the first diode D1 and the second diode D2 is used as the external electrode 1, the connection point of the third diode D3 and the fourth diode D4 is used as the external electrode 2, the connection point of the fifth diode D5 and the sixth diode D6 is used as the external electrode 3, and the parallel connection points of the three diode groups are respectively the external electrode 4 and the external electrode 5.
By adopting 6 diodes to form the rectifying circuit 151, the circuit structure of the power topology circuit chip 150 in the intelligent power module 100 according to the embodiment of the present application is simplified, and the circuit cost is also effectively reduced.
Further, the inverter circuit 152 in the power topology circuit chip 150 may be implemented by four chip sets of an Insulated Gate Bipolar Transistor (IGBT) and a Fast Recovery Diode (FRD) connected in anti-parallel, that is, a collector of the Insulated Gate Bipolar Transistor (IGBT) of each chip set is electrically connected to a cathode of the Fast Recovery Diode (FRD), and an emitter of the Insulated Gate Bipolar Transistor (IGBT) of each chip set is electrically connected to an anode of the Fast Recovery Diode (FRD).
That is, referring to fig. 4, the inverter circuit 152 includes a first chip group (Q1+ FRD1), a second chip group (Q2+ FRD2), a third chip group (Q3+ FRD3), and a fourth chip group (Q4+ FRD 4). Specifically, the first chip set (Q1+ FRD1) and the second chip set (Q2+ FRD2) are connected in series, and the third chip set (Q3+ FRD3) and the fourth chip set (Q4+ FRD4) are connected in series. One bridge arm formed by the first chip set (Q1+ FRD1) and the second chip set (Q2+ FRD2) connected in series is connected with two ends of the other bridge arm formed by the third chip set (Q3+ FRD3) and the fourth chip set (Q4+ FRD4) connected in series in parallel to form an H inverter bridge structure.
By adopting the four chip sets to form the inverter circuit 152 of the H inverter bridge structure, not only can the inversion from direct current to alternating current be effectively realized, but also the circuit structure of the power topology circuit 150 is further simplified.
It should be noted that collectors of the first and third chip groups Q1 and Q3 connected in parallel are the external electrode 6 of the intelligent power module 100 in this embodiment, emitters of the second and fourth chip groups Q2 and Q4 connected in parallel are the external electrode 7 of the intelligent power module 100 in this embodiment, a connection point between the emitter of the first chip group Q1 and the collector of the second chip group Q2, and a connection point between the emitter of the third chip group Q3 and the collector of the fourth chip group Q4 are the external electrode 8 and the external electrode 9, respectively.
In addition, as will be understood by those skilled in the art, the gate and the emitter of Q1 in the first chip group, the gate and the emitter of Q2 in the third chip group are 16-19 of the auxiliary electrodes; 20-21 taking the grid and the emitter of the Q2 as auxiliary electrodes in the second chip set; the gate and emitter of Q4 in the fourth chip set are used as auxiliary electrodes 24 and 25 for electrically connecting the driving control circuit 160, so that each igbt is turned on and off under the driving control of the driving control circuit 160.
Furthermore, in the smart power module 100 according to the embodiment of the present application, the high-frequency rectification circuit 153 is used as a rectification output portion, and can be implemented by designing two sets of rectification chips. Wherein, each group of rectifier chips comprises a diode chip or more than two fast recovery diode chips connected in parallel. Such as: in one possible implementation, each set of rectifying chips may be implemented using three fast recovery diode chips connected in parallel.
That is, referring to fig. 5, the high-frequency rectification circuit 153 includes a first group of rectification chips and a second group of rectification chips. The first set of rectifier chips includes fast recovery diodes FRD5, FRD6, and FRD7 connected in parallel. The second group of rectifying chips comprises fast recovery diodes FRD8, FRD9 and FRD10 which are connected in parallel.
Referring to fig. 5, the two parallel ends of the fast recovery diodes FRD5, FRD6, and FRD7 in the first group of rectifier chips are respectively used as the external electrode 10 and the external electrode 12, and the two parallel ends of the fast recovery diodes FRD8, FRD9, and FRD10 in the second group of rectifier chips are respectively used as the external electrode 11 and the external electrode 13. When the electrodes 12, 13 are short circuited, a typical full wave rectifier circuit is used.
In addition, it should be noted that, in the intelligent power module 100 according to the embodiment of the present application, referring to fig. 6, the power topology circuit 150 further includes a temperature sensing device RT. The temperature sensing device RT is disposed beside the inverter circuit 152 that radiates heat. Specifically, the temperature sensing device RT may be disposed near the H inverter bridge of the inverter circuit 152 and soldered on the DBC substrate 120, and two ends of the temperature sensing device RT are respectively used as the auxiliary electrodes 14 and 15. That is, the position of the temperature sensing device RT may be selected near the electronic device generating the largest amount of heat in the smart power module 100. Such as: in the smart power module 100 of the embodiment of the present application, the temperature sensing device RT may be disposed at a position between the IGBTs in the H inverter.
Further, in the smart power module 100 according to the embodiment of the present application, the driving control circuit 160 may be implemented by the gate isolation power supply 161, the gate driving chip 162, and the detection protection circuit 163. The gate isolation power source 161, the gate driving chip 162 and the detection protection circuit 163 are mounted on the bottom surface of the upper control board 140, so that the gate isolation power source 161, the gate driving chip 162 and the detection protection circuit 163 are encapsulated in a cavity formed by the upper control board 140, the housing 130 and the bottom substrate 110. It should be noted that the gate isolation power supply 161, the gate driving chip 162 and the detection protection circuit 163 can be implemented by conventional circuits in the art, or by self-design, and are not limited herein.
Therefore, in the intelligent power module 100 according to the embodiment of the present application, the power topology circuit chip 150 is implemented by sequentially electrically connecting the rectifier circuit 151, the inverter circuit 152 and the high-frequency rectifier circuit 153, the rectifier circuit 151 serves as an input module of the power topology circuit chip 150, and the high-frequency rectifier circuit 153 serves as an output module of the power topology circuit chip 150, so that the circuit structure of the power topology circuit chip 150 according to the embodiment of the present application can be sequentially arranged on the DBC substrate 120 from left to right. In addition, the driving control circuit 160 composed of the gate isolation power source 161, the driving chip, the protection circuit and the interface circuit is combined to be integrated and packaged in an upper structure part and a lower structure part, so that the intelligent power module 100 in the embodiment of the application has higher power density, better reliability, small volume, light weight, convenient installation and use, proper distributed electrical parameters, and the purposes of simplifying the process, reducing the working hours, saving materials and reducing the cost are achieved.
In addition, it should be noted that, in the smart power module 100 according to the embodiment of the present application, the DBC substrate 120 may be implemented by using two substrates. That is, in one possible implementation, the DBC substrate 120 includes a first substrate and a second substrate, which are arranged on the base substrate 110 in a left-right structure. Among them, it should be noted that the thermal conductivity of the second substrate is larger than that of the first substrate, so that when the power topology circuit chip 150 is integrated onto the insulating substrate 120, a device having a large heat generation amount can be disposed on the second substrate, and a device having a relatively small heat generation amount can be disposed on the first substrate. Compared with the mode of only adopting one material substrate in the related technology, the heat dissipation performance of the intelligent power module 100 is effectively improved, the cost is also effectively reduced, and the improvement of the module power density and the reduction of the cost are both realized.
In one possible implementation, the DBC substrate 120 may be implemented using a DBC substrate. At the same time, in DBC groupWhen the sheet 120 is implemented by using two substrates spliced left and right, the first substrate may be aluminum oxide (AL) for cost performance of the module2O3) DBC substrate. The second substrate may be implemented using an aluminum nitride (ALN) DBC substrate. The aluminum oxide ceramic is low in price, the aluminum nitride ceramic has higher thermal conductivity than the aluminum oxide ceramic, the thermal expansion coefficient matched with a chip is high in strength, high temperature resistance and chemical corrosion resistance, high in resistivity and low in dielectric loss, and the aluminum nitride ceramic can be used as an insulating and radiating substrate material of a high-power semiconductor device module.
Meanwhile, in the smart power module 100 according to the embodiment of the present application, a communication socket 170 is further disposed on the top surface of the upper control board 140 for data communication with an upper computer. In addition, the housing 130 is correspondingly fitted with a main terminal 131 and an auxiliary terminal 132. Here, it can be understood by those skilled in the art that the main connection terminal 131 and the auxiliary connection terminal 132, which are fitted on the housing 130, correspond to respective external electrodes and auxiliary electrodes in the power topology circuit 150, thereby facilitating a wiring operation from outside the housing.
In order to more clearly illustrate the structure of the smart power module 100 according to the embodiment of the present application, a process for manufacturing the same is described in detail below.
Specifically, the circuit layout is first performed according to the schematic circuit diagram of the power topology circuit chip 150 and the driving control circuit 160 shown in fig. 1. The power topology circuit chip 150 (i.e., the rectifying circuit 151, the inverter 152 and the high frequency rectifying circuit 153 as inputs) is integrated on the two DBC substrates 121 and 122 (i.e., the DBC substrate 120), and then the upper control board 140, which is designed according to the shape of the cavity formed by the housing 130 and the base substrate 110, is integrated with the self-generated power supply and the protection circuit and the peripheral circuits, so that the driving control module is installed in the cavity and the upper control board 140 serves as a cover board of the smart power module 100 according to the embodiment of the present application.
More specifically, when the power topology circuit chip 150 is integrated on the DBC substrate 120, the DIODE chips in the rectifying circuit 151, the FRD and IGBT chips in the inverter circuit 152, and the FRD chip in the high frequency rectifying circuit 153 may be designed in the order of left, middle, and right. The FRD chip 152a and the IGBT chip 152b of the two arms of the middle inverter circuit 152 are respectively designed on two substrates (i.e., a first substrate and a second substrate) with circuit patterns respectively engraved on the left and right, the temperature-sensitive device RT is placed at a position close to the IGBT chip, and each chip and the temperature-sensitive device RT are welded on the pattern corresponding to the DBC substrate 120 by a vacuum welding process.
Then, the DBC substrate 120 (i.e., the first and second substrates) is bonded on the base substrate 110 using a vacuum bonding process. The base substrate 110 may be implemented by a copper substrate.
Next, the housing 130 in which the main terminals 131 and the auxiliary terminals 132 are embedded is bonded to the base substrate 110.
Among them, the electrical connection between the power chips (i.e., DIODE, FRD, and IGBT) in the power topology circuit chip 150, the DBC substrate 120, and the main connection terminal 131 and the auxiliary connection terminal 132 on the case 130 may be achieved through a bonding process of an aluminum or copper bonding wire 180.
Next, after the upper control board 140 equipped with the gate isolation power supply 161, the gate driving circuit 162 and the detection protection circuit 163 is covered on the housing 130, electrical connection is completed by auxiliary electrode soldering inserted into the upper control board 140. The eight-pin communication socket 170 located on the upper control board 140 is used for receiving communication signals of the upper computer.
Finally, a silicone gel material is injected into the housing formed by the outer shell 130, the bottom substrate 110 and the upper control board 140 for sealing, thereby completing the packaging preparation of the smart power module 100 according to the embodiment of the present application.
With the intelligent power module 100 according to the embodiment of the present application, the structural layout of the left, middle and right partitions according to the circuit topology is implemented. Specifically, referring to fig. 7, 1 to 5 of the left main connection terminals 131 correspond to external electrode portions (i.e., rectifier diode chip regions) of the rectifier circuit 151 in the power topology circuit 150, 6 to 9 of the middle main connection terminals 131 correspond to external electrodes of the inverter circuit 152 (i.e., IGBT chip regions in the inverter circuit 152), and 10 to 13 of the right main connection terminals 131 correspond to external electrode portions of the high frequency rectifier circuit 153 (i.e., FRD chip regions of the high frequency rectifier circuit 153). The auxiliary terminals 14-25 on the two sides of the middle correspond to the auxiliary electrode portions in the inverter circuit 152. Namely, the auxiliary terminals 16-25 at the middle two sides are used for the grid and emitter of the IGBT chip, 14-15 are used for the temperature sensing device RT, and are connected with the upper control board 140 which is also used as an upper cover, and the communication socket 170 at the middle is used for connecting an upper computer.
Through the design of the structural layout, the wiring habit of people for left-in and right-out, up plus (+) and down minus (-) is met, and the design of the whole machine is convenient. Meanwhile, three ac input terminals on the left side (i.e., 1 to 3 of the main connection terminal 131 on the left side) may be bolts one smaller than other connection terminals, and the FRD dc output terminals 12 and 13 on the right side may be two parallel output structures, so that the intelligent power module 100 of the embodiment of the present application has the smallest structural size.
Meanwhile, the DBC substrate 120 is adopted to integrate the power topology circuit chip 150, the upper control board 140 is integrated with the drive control circuit 160, and the drive chip and the power chip adopt a vertical structure mode, so that the structure space of the intelligent power module 100 of the embodiment of the application is more compact, the upper control board 140 integrated with the drive control circuit 160 is embedded at the top of the shell 130 and is also used as an upper cover board of the module, and therefore better distribution parameters can be obtained on the premise of reducing cross-linking interference and heat conduction influence as much as possible.
It should be noted that, although the smart power module 100 as described above is described by taking fig. 1 to fig. 7 as an example, those skilled in the art will understand that the present application should not be limited thereto. In fact, the user can flexibly set the implementation manner of each circuit according to personal preference and/or practical application scenarios, as long as the intelligent power module 100 can realize the left-middle-right structural layout and the top-bottom structure on the structural layout.
Having described embodiments of the present application, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (10)
1. An intelligent power module is characterized by comprising a bottom substrate, a DBC substrate, an upper control board and a shell;
the DBC substrate is welded on the base substrate, and a power topological circuit chip is integrated on the DBC substrate;
the shell is fixedly arranged on the base substrate and forms a cavity which covers the DBC substrate and the power topological circuit chip together with the base substrate;
the upper control board is covered on the shell, and a driving control circuit is integrated on one surface, facing the DBC substrate, of the upper control board;
the power topology circuit chip is electrically connected with the drive control circuit and used for sequentially carrying out alternating current to direct current rectification, direct current to alternating current inversion and alternating current to direct current secondary rectification on power frequency alternating current under the drive of the drive control circuit.
2. The smart power module of claim 1 wherein the power topology circuit chip includes a rectifier circuit, an inverter circuit, and a high frequency rectifier circuit;
the rectifying circuit, the inverter circuit and the high-frequency rectifying circuit are electrically connected in sequence and are sequentially arranged on the DBC substrate from left to right.
3. The smart power module of claim 2 wherein the rectifying circuit comprises three sets of diode chip sets connected in parallel;
each group of diode chip groups comprises two diodes connected in series;
and the connection point of every two diodes connected in series is used as an external electrode and is used for connecting the three phases of the power frequency alternating current.
4. The intelligent power module of claim 2, wherein the inverter circuit comprises four sets of anti-parallel circuits of IGBT and FRD chips, namely a first chip set, a second chip set, a third chip set and a fourth chip set;
the first chipset is connected with the second chipset in series, and the third chipset is connected with the fourth chipset in series;
the first chipset and the second chipset connected in series are connected in parallel with the third chipset and the fourth chipset connected in series to form an H inverter bridge structure.
5. The smart power module as claimed in claim 2, wherein the high frequency rectification circuit comprises two sets of rectification chips;
each group of the rectifying chips comprises a diode chip or a plurality of diode chips connected in parallel.
6. The smart power module of claim 2 wherein the power topology circuit chip further comprises a temperature sensing device;
the temperature sensing device is arranged beside the inverter circuit and welded on the DBC substrate;
the rectification circuit, the inverter circuit and the high-frequency rectification circuit are electrically connected through bonding wires.
7. The intelligent power module according to any one of claims 1 to 5, wherein the drive control circuit comprises a gate isolation power supply, a gate drive chip and a detection protection circuit;
the gate isolation power supply, the gate driving chip and the detection protection circuit are all installed on the bottom surface of the upper control board, so that the gate isolation power supply 161, the gate driving chip and the detection protection circuit are packaged in a cavity formed by the upper control board, the shell and the bottom substrate.
8. The smart power module of claim 1 wherein the DBC substrate comprises a first substrate and a second substrate;
the first substrate and the second substrate are arranged in a left-right structure, and the thermal conductivity of the second substrate is greater than that of the first substrate.
9. The smart power module of claim 8 wherein the first substrate is an alumina substrate and the second substrate is an aluminum nitride substrate.
10. The smart power module as recited in claim 1 wherein the top surface of the upper control board is further provided with a communications jack;
the shell is also embedded with a main wiring terminal and an auxiliary wiring terminal, and the shell is bonded with the bottom substrate;
the main wiring terminal and the auxiliary wiring terminal correspond to an external electrode and an auxiliary electrode in the power topology circuit chip respectively.
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| CN202010989604.9A CN112072895A (en) | 2020-09-18 | 2020-09-18 | Intelligent power module |
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| CN202010989604.9A CN112072895A (en) | 2020-09-18 | 2020-09-18 | Intelligent power module |
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