CN112072464B - 光源装置 - Google Patents

光源装置 Download PDF

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Publication number
CN112072464B
CN112072464B CN202010521727.XA CN202010521727A CN112072464B CN 112072464 B CN112072464 B CN 112072464B CN 202010521727 A CN202010521727 A CN 202010521727A CN 112072464 B CN112072464 B CN 112072464B
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CN
China
Prior art keywords
laser
light source
wavelength
modules
source device
Prior art date
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Application number
CN202010521727.XA
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English (en)
Chinese (zh)
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CN112072464A (zh
Inventor
出岛范宏
大森雅树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN112072464A publication Critical patent/CN112072464A/zh
Application granted granted Critical
Publication of CN112072464B publication Critical patent/CN112072464B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
CN202010521727.XA 2019-06-10 2020-06-10 光源装置 Active CN112072464B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-107918 2019-06-10
JP2019107918A JP7280498B2 (ja) 2019-06-10 2019-06-10 光源装置

Publications (2)

Publication Number Publication Date
CN112072464A CN112072464A (zh) 2020-12-11
CN112072464B true CN112072464B (zh) 2024-01-05

Family

ID=71069723

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010521727.XA Active CN112072464B (zh) 2019-06-10 2020-06-10 光源装置

Country Status (4)

Country Link
US (1) US11394177B2 (https=)
EP (1) EP3754800B1 (https=)
JP (1) JP7280498B2 (https=)
CN (1) CN112072464B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208753726U (zh) * 2018-09-13 2019-04-16 上海高意激光技术有限公司 非稳腔光谱合束装置
JP2021118271A (ja) * 2020-01-27 2021-08-10 パナソニックＩｐマネジメント株式会社 レーザ発振器及びレーザ加工方法
CN114994934B (zh) * 2022-07-19 2022-10-21 中国科学院长春光学精密机械与物理研究所 光谱合束装置及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153379A (ja) * 2006-12-15 2008-07-03 Sharp Corp 波長検出装置および波長検出方法
CN105428996A (zh) * 2015-12-09 2016-03-23 中国科学院长春光学精密机械与物理研究所 基于多光栅结构的半导体激光器合束装置及合束方法

Family Cites Families (16)

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US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power
JP2005183426A (ja) 2003-12-16 2005-07-07 Sony Corp 外部共振器型半導体レーザおよび半導体レーザ
JP2006324561A (ja) 2005-05-20 2006-11-30 Sony Corp レーザ装置および回折格子の駆動方法
US7535936B2 (en) 2005-08-05 2009-05-19 Daylight Solutions, Inc. External cavity tunable compact Mid-IR laser
US8179594B1 (en) * 2007-06-29 2012-05-15 Lockheed Martin Corporation Method and apparatus for spectral-beam combining of fanned-in laser beams with chromatic-dispersion compensation using a plurality of diffractive gratings
US9093822B1 (en) * 2010-12-20 2015-07-28 TeraDiode, Inc. Multi-band co-bore-sighted scalable output power laser system
US9823480B2 (en) * 2012-02-22 2017-11-21 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US9335551B2 (en) * 2012-11-28 2016-05-10 TeraDiode, Inc. Welding techniques using multi-wavelength beam combining systems
US20140268352A1 (en) * 2013-03-15 2014-09-18 Trumpf Photonics, Inc. Devices for interleaving laser beams
US9690107B2 (en) * 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
WO2015145608A1 (ja) 2014-03-26 2015-10-01 株式会社島津製作所 レーザ装置
JP2016054295A (ja) 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
JPWO2017022142A1 (ja) * 2015-08-04 2017-11-30 三菱電機株式会社 半導体レーザ装置
WO2017127526A1 (en) * 2016-01-20 2017-07-27 TeraDiode, Inc. Wavelength beam combining laser systems utilizing prisms for beam quality improvement and bandwidth reduction
GB2556197B (en) * 2016-09-30 2021-11-24 Nichia Corp Light source device
WO2018173109A1 (ja) 2017-03-21 2018-09-27 三菱電機株式会社 レーザ発振器及びレーザ加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153379A (ja) * 2006-12-15 2008-07-03 Sharp Corp 波長検出装置および波長検出方法
CN105428996A (zh) * 2015-12-09 2016-03-23 中国科学院长春光学精密机械与物理研究所 基于多光栅结构的半导体激光器合束装置及合束方法

Also Published As

Publication number Publication date
US20200388990A1 (en) 2020-12-10
JP7280498B2 (ja) 2023-05-24
EP3754800A1 (en) 2020-12-23
JP2020202281A (ja) 2020-12-17
US11394177B2 (en) 2022-07-19
CN112072464A (zh) 2020-12-11
EP3754800B1 (en) 2023-02-22

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