JP7280498B2 - 光源装置 - Google Patents

光源装置 Download PDF

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Publication number
JP7280498B2
JP7280498B2 JP2019107918A JP2019107918A JP7280498B2 JP 7280498 B2 JP7280498 B2 JP 7280498B2 JP 2019107918 A JP2019107918 A JP 2019107918A JP 2019107918 A JP2019107918 A JP 2019107918A JP 7280498 B2 JP7280498 B2 JP 7280498B2
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JP
Japan
Prior art keywords
laser
light source
wavelength
modules
source device
Prior art date
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JP2019107918A
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English (en)
Japanese (ja)
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JP2020202281A (ja
JP2020202281A5 (https=
Inventor
範宏 出島
雅樹 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2019107918A priority Critical patent/JP7280498B2/ja
Priority to EP20178670.4A priority patent/EP3754800B1/en
Priority to US16/895,565 priority patent/US11394177B2/en
Priority to CN202010521727.XA priority patent/CN112072464B/zh
Publication of JP2020202281A publication Critical patent/JP2020202281A/ja
Publication of JP2020202281A5 publication Critical patent/JP2020202281A5/ja
Application granted granted Critical
Publication of JP7280498B2 publication Critical patent/JP7280498B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
JP2019107918A 2019-06-10 2019-06-10 光源装置 Active JP7280498B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019107918A JP7280498B2 (ja) 2019-06-10 2019-06-10 光源装置
EP20178670.4A EP3754800B1 (en) 2019-06-10 2020-06-08 Light source device
US16/895,565 US11394177B2 (en) 2019-06-10 2020-06-08 Light source device
CN202010521727.XA CN112072464B (zh) 2019-06-10 2020-06-10 光源装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019107918A JP7280498B2 (ja) 2019-06-10 2019-06-10 光源装置

Publications (3)

Publication Number Publication Date
JP2020202281A JP2020202281A (ja) 2020-12-17
JP2020202281A5 JP2020202281A5 (https=) 2022-05-19
JP7280498B2 true JP7280498B2 (ja) 2023-05-24

Family

ID=71069723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019107918A Active JP7280498B2 (ja) 2019-06-10 2019-06-10 光源装置

Country Status (4)

Country Link
US (1) US11394177B2 (https=)
EP (1) EP3754800B1 (https=)
JP (1) JP7280498B2 (https=)
CN (1) CN112072464B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208753726U (zh) * 2018-09-13 2019-04-16 上海高意激光技术有限公司 非稳腔光谱合束装置
JP2021118271A (ja) * 2020-01-27 2021-08-10 パナソニックＩｐマネジメント株式会社 レーザ発振器及びレーザ加工方法
CN114994934B (zh) * 2022-07-19 2022-10-21 中国科学院长春光学精密机械与物理研究所 光谱合束装置及方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183426A (ja) 2003-12-16 2005-07-07 Sony Corp 外部共振器型半導体レーザおよび半導体レーザ
JP2006324561A (ja) 2005-05-20 2006-11-30 Sony Corp レーザ装置および回折格子の駆動方法
US20070030865A1 (en) 2005-08-05 2007-02-08 Daylight Solutions External cavity tunable compact mid-IR laser
WO2015145608A1 (ja) 2014-03-26 2015-10-01 株式会社島津製作所 レーザ装置
CN105428996A (zh) 2015-12-09 2016-03-23 中国科学院长春光学精密机械与物理研究所 基于多光栅结构的半导体激光器合束装置及合束方法
JP2016054295A (ja) 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
WO2018173109A1 (ja) 2017-03-21 2018-09-27 三菱電機株式会社 レーザ発振器及びレーザ加工装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power
JP2008153379A (ja) * 2006-12-15 2008-07-03 Sharp Corp 波長検出装置および波長検出方法
US8179594B1 (en) * 2007-06-29 2012-05-15 Lockheed Martin Corporation Method and apparatus for spectral-beam combining of fanned-in laser beams with chromatic-dispersion compensation using a plurality of diffractive gratings
US9093822B1 (en) * 2010-12-20 2015-07-28 TeraDiode, Inc. Multi-band co-bore-sighted scalable output power laser system
US9823480B2 (en) * 2012-02-22 2017-11-21 TeraDiode, Inc. Wavelength beam combining laser systems with micro-optics
US9335551B2 (en) * 2012-11-28 2016-05-10 TeraDiode, Inc. Welding techniques using multi-wavelength beam combining systems
US20140268352A1 (en) * 2013-03-15 2014-09-18 Trumpf Photonics, Inc. Devices for interleaving laser beams
US9690107B2 (en) * 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
JPWO2017022142A1 (ja) * 2015-08-04 2017-11-30 三菱電機株式会社 半導体レーザ装置
WO2017127526A1 (en) * 2016-01-20 2017-07-27 TeraDiode, Inc. Wavelength beam combining laser systems utilizing prisms for beam quality improvement and bandwidth reduction
GB2556197B (en) * 2016-09-30 2021-11-24 Nichia Corp Light source device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183426A (ja) 2003-12-16 2005-07-07 Sony Corp 外部共振器型半導体レーザおよび半導体レーザ
JP2006324561A (ja) 2005-05-20 2006-11-30 Sony Corp レーザ装置および回折格子の駆動方法
US20070030865A1 (en) 2005-08-05 2007-02-08 Daylight Solutions External cavity tunable compact mid-IR laser
WO2015145608A1 (ja) 2014-03-26 2015-10-01 株式会社島津製作所 レーザ装置
JP2016054295A (ja) 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
CN105428996A (zh) 2015-12-09 2016-03-23 中国科学院长春光学精密机械与物理研究所 基于多光栅结构的半导体激光器合束装置及合束方法
WO2018173109A1 (ja) 2017-03-21 2018-09-27 三菱電機株式会社 レーザ発振器及びレーザ加工装置

Also Published As

Publication number Publication date
US20200388990A1 (en) 2020-12-10
EP3754800A1 (en) 2020-12-23
JP2020202281A (ja) 2020-12-17
US11394177B2 (en) 2022-07-19
CN112072464A (zh) 2020-12-11
EP3754800B1 (en) 2023-02-22
CN112072464B (zh) 2024-01-05

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