CN112071903A - Spin-polarized coupled GaN MOSFET and preparation method thereof - Google Patents

Spin-polarized coupled GaN MOSFET and preparation method thereof Download PDF

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CN112071903A
CN112071903A CN202010817275.XA CN202010817275A CN112071903A CN 112071903 A CN112071903 A CN 112071903A CN 202010817275 A CN202010817275 A CN 202010817275A CN 112071903 A CN112071903 A CN 112071903A
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CN112071903B (en
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吴少兵
陈韬
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CETC 55 Research Institute
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers

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Abstract

The invention discloses a spin-polarized coupled GaN MOSFET and a preparation method thereof, belonging to the field of ferromagnetic materials and the field of third-generation semiconductor microwave millimeter wave devices. The structure comprises a GaN MOSFET complete epitaxial structure, source drain metal, source drain protective SiN media, a primary gate metal magnetized film and secondary gate metal, wherein the source drain metal, the source drain protective SiN media, the primary gate metal magnetized film and the secondary gate metal are prepared on the GaN MOSFET complete epitaxial structure. The invention forms a primary gate metal magnetized film by preparing the magnetized film on the surface of the barrier layer of the GaN MOSFET complete epitaxial structure, and then forms a complete gate by preparing secondary gate metal. The invention can modulate the electron spin direction of the two-dimensional electron gas in the channel through the magnetic size and the magnetization direction of the grid; meanwhile, the concentration of the two-dimensional electron gas in the channel can be regulated and controlled.

Description

Spin-polarized coupled GaN MOSFET and preparation method thereof
Technical Field
The invention relates to a spin-polarized coupled GaN MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) and a preparation method thereof, belonging to the Field of ferromagnetic materials and the Field of third-generation Semiconductor microwave millimeter wave devices.
Background
The third-generation semiconductor GaN device has larger forbidden band width and higher working voltage, and has wide application prospect in the field of microwave and millimeter wave chips. In general, an AlGaN/GaN MOSFET device is epitaxially grown by MOCVD (metal organic chemical vapor deposition), MBE (molecular beam epitaxy), or other methods. Due to the inverse piezoelectric effect of the AlGaN/GaN interface, two-dimensional electron gas exists in a GaN channel, so that a field effect characteristic potential barrier formed by a grid electrode of the device has a control effect on the channel two-dimensional electron gas, namely a voltage control current device. Due to the modulation effect of the grid voltage on the channel current, the MOSFET device is widely used in active devices such as radio frequency switches, power amplifiers and the like. The modulation mode of a conventional mosfet is controlled by a voltage to control a current device, i.e., a change in gate voltage can control the magnitude of a channel current. The electron spin in the channel is not controlled.
The vertical magnetization film can generate spontaneous magnetization in the magnetic film, and the direction of the spontaneous magnetization is vertical to the film surface. The perpendicular magnetization film can control the direction of spin electrons inside it by a magnetic field. Due to the spin coupling effect of the perpendicular magnetization film, the spin electrons adjacent thereto are also affected so that the spin directions thereof are aligned in the same direction. Based on this characteristic, perpendicular magnetization films are widely used in the field of magnetic storage.
The traditional MOSFET device is a voltage modulation channel current device, the direction of spin electrons in a channel cannot be modulated, and if a vertical magnetization film is used as a grid electrode of the MOSFET device, the vertical magnetization film can modulate the spin electrons in the channel due to the spin coupling characteristic of the vertical magnetization film. And also modulates the electron concentration in the channel. Therefore, the channel electron concentration and the electron spin direction are modulated simultaneously by the gate electrode having the perpendicular magnetization film. Therefore, the GaN MOSFET with spin polarization coupling is developed, so that the relation between a radio frequency device and spin electrons can be established, and the development of a multi-dimensional microwave millimeter wave device is promoted.
At present, the gate metal used in GaN devices is generally a metal such as Ni, Pt, etc., and the barrier layer is generally an AlGaN material. The field effect characteristic is generated by preparing the grid metal on the surface of the barrier layer through sputtering or evaporation, so that the field effect modulation of the voltage control current is formed. Because the traditional GaN MOSFET device is applied to a radio frequency power amplifier, the application environment does not relate to a magnetic field environment, and the magnetic property of the grid metal is not deeply researched.
In summary, the conventional MOSFET device can only control channel electrons by field effect, and the association between the MOSFET device and spin electrons is established. The spin polarization coupling of the gate and the channel electrons is not realized in principle, that is, the gate cannot simultaneously regulate the spin direction of the spin electrons in the channel and the channel current.
Disclosure of Invention
The invention provides a spin polarization coupled GaN MOSFET and a preparation method thereof, and the structure can realize the modulation of the electron spin direction of two-dimensional electron gas through the spin polarization coupling of a magnetized film. A magnetized film is prepared on the surface of a barrier layer of a GaN MOSFET complete epitaxial structure to form a primary gate metal magnetized film, and then a secondary gate metal is prepared to form a complete gate. The grid electrode which is covered by the primary grid metal magnetization film has a vertical magnetization characteristic or an in-plane magnetization characteristic and can generate spin polarization coupling to electrons in a channel; meanwhile, the grid electrode has a field effect modulation characteristic on the two-dimensional electron gas in the AlGaN/GaN channel, so that the multi-layer film grid metal has a spin polarization coupling characteristic and a field effect modulation characteristic on the two-dimensional electron gas in the channel, and further can simultaneously realize the modulation on the spin direction of channel electrons and channel current.
The invention adopts the following technical scheme for solving the technical problems:
a spin-polarized coupled GaN MOSFET comprises a GaN MOSFET complete epitaxial structure 108, and source-drain metal 201, source-drain protective SiN medium 202, a primary gate metal magnetized film 603 and secondary gate metal 602 which are prepared on the GaN MOSFET complete epitaxial structure 108; the GaN MOSFET complete epitaxial structure 108 includes: a substrate 101, a nucleation layer and high resistance buffer layer 102, a channel layer 103, a barrier layer 104; the primary gate metal magnetized film 603 and the secondary gate metal 602 together form a gate of the device from bottom to top.
The substrate 101 is any one of a Si single crystal, a high-purity semi-insulating SiC, a GaN single crystal, and a diamond substrate.
The nucleation layer and the high-resistance buffer layer 102 are made of one or more of iron-doped GaN, vanadium-doped GaN and AlN materials.
The channel layer 103 is made of one of GaN and InGaN.
The barrier layer 104 is any one of AlGaN, AlInN, AlN, and AlInGaN.
The primary gate metal magnetization film 603 is a perpendicular magnetization film or an in-plane magnetization film, and has a perpendicular magnetization characteristic or an in-plane magnetization characteristic, respectively, and its spontaneous magnetization direction is perpendicular to the film surface or parallel to the film surface, respectively.
The primary gate metal magnetized film 603 is composed of a metal oxide, a ferromagnetic material, and a metal material from bottom to top.
The metal oxide in the primary gate metal magnetization film 603 is MgO or Al2O3、HfO2And ZrO or a combination thereof.
The ferromagnetic material in the primary gate metal magnetization film 603 is any one or combination of CoFeB, NiFe, CoFe, CoNi, CoPt, Fe, Co, and Ni ferromagnetic materials.
The metal material in the primary gate metal magnetization film 603 is any one or combination of Ta, Ti, Pt, Pd, and Ru metal materials.
A preparation method of a spin polarization coupling GaN MOSFET comprises the following specific steps:
1) growing a nucleation layer, a high-resistance buffer layer 102, a channel layer 103 and a barrier layer 104 above a substrate 101 in sequence by using a growth method comprising MOCVD and MBE;
2) preparing source drain metal 201 and growing source drain protective SiN medium 202 on the GaN MOSFET complete epitaxial structure 108 through a photoetching process, an ion implantation process, an evaporation and stripping process and an alloy process;
3) forming a grid bar graph 302 on the GaN MOSFET complete epitaxial structure 108 by utilizing a photoetching process 301, and then etching or corroding by utilizing an etching process or a wet etching process 401 to remove the medium of the grid bar part so as to form a medium groove structure 402 on the grid bar part;
4) forming a gate cap structure glue type 502 on the GaN MOSFET complete epitaxial structure 108 by utilizing a photoetching gate cap process 501, wherein the structure is easy to carry out a stripping process;
5) the gate metal preparation process 601 adopts a sputtering process to prepare a primary gate metal magnetized film 603 and a secondary gate metal 602.
The invention has the following beneficial effects:
1. the invention adopts the primary gate metal magnetized film as the bottom material of the gate metal, and the gate metal has the vertical magnetization characteristic or the in-plane magnetization characteristic. The structure firstly introduces the magnetization film into the field effect transistor, and simultaneously firstly introduces the magnetic field regulation into the field effect transistor.
2. The grid metal with the vertical magnetization characteristic or the in-plane magnetization characteristic can generate the spin polarization effect on electrons in the channel due to the spin polarization coupling effect, so that the electron spin direction of two-dimensional electron gas in the channel can be modulated through the magnetic size and the magnetization direction of the grid; meanwhile, the two-dimensional electron gas concentration in the channel can be regulated and controlled due to the action of the grid electrode.
Drawings
FIG. 1 is a schematic view of a GaN epitaxial layer structure.
FIG. 2 is a schematic cross-sectional view of the source-drain metal and the growth protection medium.
FIG. 3 is a schematic cross-sectional view of a photolithographic gate leg process.
FIG. 4 is a schematic diagram of etching a gate pin to form a dielectric recess.
FIG. 5 is a schematic diagram after photoetching gate caps.
FIG. 6 is a schematic cross-sectional view of a gate structure formed by sputtering a primary gate metal magnetization film and a primary gate metal and lift-off.
Wherein: 101: a substrate; 102: a nucleation layer and a high-resistance buffer layer; 103: a channel layer; 104: a barrier layer; 105: an AlGaN back barrier layer; 106: an AlN insertion layer; 107: a GaN cap layer; 108: a GaN MOSFET complete epitaxial structure; 201: source drain metal; 202: protecting SiN medium by source and drain; 301: photoetching a gate pin; 302: a grid leg pattern; 401: etching the grid feet or etching the grid feet by a wet method; 402: grid leg groove patterns; 501: photoetching a gate cap; 502: a gate cap structure glue type; 601: a grid electrode preparation process; 602: a secondary gate metal; 603: the primary gate metal magnetizes the film 603.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
The invention takes the magnetized film as the bottom layer of the grid electrode by sputtering on the surface of the barrier layer of the GaN MOSFET complete epitaxial structure. The magnetized film is composed of metal oxide medium, ferromagnetic material and metal material. The grid and barrier layer under the magnetized film can generate field effect characteristic. The grid formed by the magnetized film has a vertical magnetization characteristic or an in-plane magnetization characteristic, and can generate spin polarization coupling to electrons in a channel; meanwhile, the grid has a field effect modulation characteristic on the two-dimensional electron gas in the channel, so that the multi-layer grid metal simultaneously has a spin polarization coupling characteristic and a field effect modulation characteristic on the two-dimensional electron gas in the channel, and further can simultaneously realize the modulation on the spin direction of channel electrons and channel current.
The spin-polarized coupled GaN MOSFET and the preparation method thereof are shown in FIG. 1, FIG. 2, FIG. 3, FIG. 4, FIG. 5 and FIG. 6. As shown in fig. 1, a GaN MOSFET complete epitaxial structure 108 is epitaxially grown on a substrate 101, including the substrate 101, a nucleation layer and a high-resistance buffer layer 102, a channel layer 103, and a barrier layer 104. The substrate 101 is any of a Si single crystal, a high-purity semi-insulating SiC, a GaN single crystal, and a diamond substrate. The nucleation layer and the high-resistance buffer layer 102 are made of one or more of iron-doped GaN, vanadium-doped GaN and AlN materials. The channel layer 103 is made of one of GaN and InGaN materials. The barrier layer 104 is any of AlGaN, AlInN, AlN, and AlInGaN. The barrier layer 104 and the channel layer 103 may generate a two-dimensional electron gas at the barrier layer 104/channel layer 103 interface due to the inverse piezoelectric effect. The thickness of each layer is approximately: the thickness of the substrate 101 is 600um, the thicknesses of the nucleation layer and the high-resistance buffer layer 102 are 1500nm, the thickness of the channel layer 103 is 200nm, the thickness of the barrier layer 104 is 20nm, and the thicknesses of all the layers can be adjusted correspondingly according to the requirements of specific devices. When the barrier layer 104 is AlGaN, the specific Al content can be determined by the device application requirements, such as 18% to 38%. In addition, each epitaxial layer can be selectively inserted into other layers according to the requirements of the breakdown voltage, the mobility and other characteristics of different application environments. For example, an AlGaN back barrier layer 105 is interposed between the channel layer 103 and the nucleation layer and the high resistance buffer layer 102, an AlN insertion layer 106 is interposed between the channel layer 103 and the barrier layer 104, and a GaN cap layer 107 is grown on the surface of the barrier layer 104. Since the typical epitaxial layers of the present invention include the substrate 101, the nucleation and high resistance buffer layer 102, the channel layer 103, and the barrier layer 104, other intervening layers are not discussed at the time, and the fabrication of the selective structure does not affect the implementation of the spin-polarization coupled GaN MOSFET of the present invention.
Further, as shown in fig. 2, source drain metal 201 is then prepared on the GaN epitaxial material and source drain protective SiN dielectric 202 is grown. The source electrode and the drain electrode are formed by preparing ohmic contact metal, and the specific ohmic contact process and the ohmic contact metal are not the content of the patent and are not limited. Other structures and processes, such as active area isolation, resistor preparation, capacitor preparation, microstrip preparation and the like, can be related to the microwave and millimeter wave monolithic integrated circuit, and the preparation mode and the preparation sequence are not limited in the invention because the microwave and millimeter wave monolithic integrated circuit is not the key point related to the invention. The dielectric layer also protects the AlGaN barrier layer surface of the active region. And then photoetching an isolation region and carrying out implantation isolation.
Further, as shown in fig. 3 and 4, a photolithography process 301 is used to form a grid pattern 302 on the surface, then an etching process or a wet etching process 401 is used to etch or corrode and remove the medium of the grid portion, and after the grid is etched, the photoresist is removed, so that the grid portion forms a medium groove structure 402. The exposed portion of the bottom of the trench is the barrier layer 104. And selectively grooving the AlGaN according to the fact that the prepared circuit is an enhancement device or a depletion device, and the specific device type is not the content of the invention and is not described any more.
Further, as shown in fig. 5, a gate cap process 501 is performed on the sample wafer to form a gate cap structure glue type 502, the structure is easy to be stripped, and the size of the gate cap can be generally controlled to be about 1.0 um. Further, as shown in fig. 6, after the surface treatment with a solution such as HCL (hydrochloric acid), the gate electrode is formedA metal preparation process 601. The gate metal magnetization film 603 is sputtered once. The primary gate metal magnetization film 603 is composed of a metal oxide, a ferromagnetic material, and a metal material from bottom to top. The metal oxide in the primary gate metal magnetization film 603 is MgO or Al2O3、HfO2And ZrO or a combination thereof. The ferromagnetic material in the primary gate metal magnetization film 603 is any one or a combination of CoFeB, NiFe, CoFe, CoNi, CoPt, Fe, Co, Ni ferromagnetic materials. The metal material in the primary gate metal magnetization film 603 is any one or a combination of Ta, Ti, Pt, Pd, and Ru metal materials. For example, the primary gate metal magnetization film 603 may adopt a MgO/CoFeB/Ta multilayer film, which is an ultra-thin nano-layer, wherein a first layer is sputtered with a metal oxide medium MgO with a thickness of 0.8nm, and a second layer is sputtered with CoFeB, and the atomic ratio of CoFeB alloy materials is generally 40: 40: 20, can also be adjusted; the thickness of CoFeB is 1.3nm, and the thickness of the third layer sputtered is Ta and is 1.3 nm. After preparation, an annealing process can be selectively adopted to change the saturation magnetization, the coercive force and the like of the vertical magnetization film. In order to reduce the gate resistance, the secondary gate metal 602 is continuously sputtered or evaporated above the primary gate metal magnetization film 603, i.e. above the MgO/CoFeB/Ta multilayer film, and the secondary gate metal 602 is one or a combination of Au, AL, Pt, Ti, Ni, and the like. For example, the secondary grid metal can be prepared by an electron beam evaporation system, and the metal system can be selected from a TiPtAu system, wherein the thickness of Au can be controlled between 300nm and 950 nm.
The primary gate metal magnetization film 603 has a spontaneous magnetization characteristic, and can generate spin polarization coupling to electrons of two-dimensional electron gas in a channel; meanwhile, the grid electrode has a field effect modulation characteristic on the two-dimensional electron gas in the AlGaN/GaN channel, so that the multi-layer film grid metal has a spin polarization coupling characteristic and a field effect modulation characteristic on the two-dimensional electron gas in the channel, and further can simultaneously realize the modulation on the spin direction of channel electrons and channel current.
The steps of the photoetching of the gate cap and the primary gate metal magnetized film 603 can be changed, the primary gate metal magnetized film 603 is sputtered on a whole piece, then the gate cap is photoetched, and then the stripping process is carried out by evaporating the secondary gate metal 602. After the secondary gate metal 602 is evaporated and stripped, the MgO/CoFeB/Ta multilayer film except the gate metal is removed by adopting an ion milling process, and only the metal part below the gate thickening metal is left. And carrying out a heat treatment process after the grid is formed, so as to enhance the field effect characteristic of the grid of the device. Other front side processes and back side processes are the same as the manufacturing method of a general MOSFET device, are not the key points of the invention, and are not described again.
After the gate ion milling, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method is used to grow SiN dielectric for gate passivation, and for a monolithic circuit, resistors, capacitors, wiring and the like need to be prepared. In addition, after the front surface is finished, processes such as wafer thinning, back hole etching, back gold preparation and the like are required, and since the processes are generally mature and are not the key points of the invention, detailed description is omitted here.
The embodiment of the invention is described in order to better explain the spin polarization coupling MOSFET and the preparation method thereof. The process steps of the invention are simpler, and the process technology for producing the GaN microwave millimeter wave chip is compatible.
The key point of the invention is that the primary gate metal magnetized film is used as the bottom layer of the gate electrode in the figures, which embodies the substantive characteristics and progress of the invention. The magnetization film may be a perpendicular magnetization film or an in-plane magnetization film. Meanwhile, the epitaxial material system structure can be adjusted according to actual use requirements, such as selective introduction of an AlN insertion layer 106, an AlGaN back barrier layer 105, and other MOSFET device structures. The thickness of each layer and the Al content and thickness of the AlGaN barrier layer can be adjusted according to the application characteristics of the actual device. In addition, the types and thicknesses of the metal oxide material, the ferromagnetic material and the metal material in the magnetization film can be adjusted according to requirements. The dielectric thickness, the material selection of the gate thickening metal system, the material and thickness of the passivation layer, and the like can be modified according to actual conditions, which is not described herein again.

Claims (9)

1. A spin-polarized coupled GaN MOSFET is characterized by comprising a GaN MOSFET complete epitaxial structure (108), and source and drain metals (201), source and drain protective SiN media (202), a primary gate metal magnetized film (603) and secondary gate metals (602) which are prepared on the GaN MOSFET complete epitaxial structure (108); the GaN MOSFET complete epitaxial structure (108) comprises a substrate (101), a nucleation layer, a high-resistance buffer layer (102), a channel layer (103) and a barrier layer (104); the primary gate metal magnetized film (603) and the secondary gate metal (602) jointly form a gate of the device from bottom to top.
2. A spin-polarized coupled GaN MOSFET according to claim 1, characterized in that the substrate (101) is any of Si single crystal, high purity semi-insulating SiC, GaN single crystal, diamond substrate.
3. A spin-polarized coupled GaN MOSFET as claimed in claim 1 wherein the nucleation and high resistance buffer layers (102) are composed of one or more of fe-doped GaN, alum-doped GaN, AlN materials.
4. A spin-polarized coupled GaN MOSFET according to claim 1, characterized in that the channel layer (103) is one of GaN, InGaN material.
5. A spin-polarized coupled GaN MOSFET as claimed in claim 1, characterized in that the barrier layer (104) is any of AlGaN, AlInN, AlN, AlInGaN.
6. A spin-polarized coupled GaN MOSFET according to claim 1 wherein the primary gate metal magnetization film (603) is a perpendicular magnetization film or an in-plane magnetization film, respectively, having a perpendicular magnetization characteristic or an in-plane magnetization characteristic, respectively, with its spontaneous magnetization direction perpendicular to the film plane or parallel to the film plane.
7. A spin-polarized coupled GaN MOSFET according to claim 6, characterized in that the primary gate metal magnetization film (603) is composed of metal oxide, ferromagnetic material, metal material from bottom to top.
8. The spin-polarized coupled GaN MOSFET of claim 7, wherein the metal oxide is MgO, Al2O3、HfO2Any one or combination of ZrO; the ferromagnetic material is any one or combination of CoFeB, NiFe, CoFe, CoNi, CoPt, Fe, Co and Ni ferromagnetic material; the metal material is any one or combination of Ta, Ti, Pt, Pd and Ru metal materials.
9. The method of claim 1, comprising the following steps:
1) growing a nucleation layer, a high-resistance buffer layer (102), a channel layer (103) and a barrier layer (104) above a substrate (101) in sequence by using a growth method comprising MOCVD and MBE;
2) preparing source and drain metal (201) and growing a source and drain protection SiN medium (202) on the GaN MOSFET complete epitaxial structure (108) through a photoetching process, an ion implantation process, an evaporation and stripping process and an alloy process;
3) forming a grid bar graph (302) on the GaN MOSFET complete epitaxial structure (108) by utilizing a photoetching process (301), and then etching or corroding by adopting an etching process or a wet etching process (401) to remove the medium of the grid bar part so that the grid bar part forms a medium groove structure (402);
4) forming a gate cap structure glue type (502) on the GaN MOSFET complete epitaxial structure (108) by utilizing a photoetching gate cap process (501);
5) the gate metal preparation process (601) adopts a sputtering process to prepare a primary gate metal magnetized film (603) and prepare a secondary gate metal (602).
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