CN110429135B - Method and structure for injecting spin into GaN-based heterostructure two-dimensional electron gas - Google Patents
Method and structure for injecting spin into GaN-based heterostructure two-dimensional electron gas Download PDFInfo
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention provides a method and a structure for injecting spin into GaN-based heterostructure two-dimensional electron gas, and belongs to the technical field of semiconductor spin electronics. The method controls the AlN thickness to be about 1-3nm by preparing the AlN/GaN heterostructure, so that the AlN is simultaneously used as a barrier layer and a tunneling layer to inject spin. The invention can greatly improve the efficiency of injecting spin into the two-dimensional electron gas in the GaN-based heterostructure, promote the research on the spin property of the two-dimensional electron gas in the GaN-based heterostructure and obtain the spintronics device with excellent properties.
Description
Technical Field
The invention belongs to the technical field of semiconductor spintronics, and relates to growth of single crystals of a high-quality barrier layer and a tunneling layer on GaN and a method for injecting spin into two-dimensional electron gas in a GaN-based heterostructure.
Background
The 2016 natural journal writing indicates that the later phase of moore's law has come and spintronics will be one of the important directions for continued development. The freedom degree of spin is used for replacing electron charge to transfer information, so that the problems of high heat generation and device failure caused by continuous reduction of device dimensions and continuous increase of integration level can be solved. At the same time, the spin flips between two eigenstates much faster than ordinary electronic devices that transfer information by gate voltage truncation. In general, the spintronic device has the advantages of high speed, low power consumption and high integration compared with the traditional electronic device.
Third generation semiconductors represented by group III nitrides have excellent properties such as large forbidden band width, high saturation drift velocity, and high breakdown field strength, and in particular, in the field of spintronics, wide forbidden band semiconductors such as GaN are considered to be promising spintronics devices for realizing room temperature operation. In addition, since the GaN semiconductor material has a long spin relaxation time due to weak spin-orbit coupling caused by a wide band gap, it has been reported in the literature that a spin relaxation time of up to 21ns (1 Wolos, a., et al., Physical Review B83 (2011)) is measured at 30K in Si-doped n-type GaN. The core of spin control is the realization of spin electronics, and the common method is to control Rashba spin orbit coupling by applying gate voltage to induce an effective magnetic field, thereby controlling the spin reversal. The GaN-based heterostructure generates strong Rashba spin orbit coupling due to the strong polarization electric field up to MV/cm at the interface, so that the spin is easy to regulate and control. Therefore, GaN is an excellent semiconductor material and is suitable for the study of spintronics.
At present, the research of semiconductor spintronics focuses on solving the problem of low efficiency of spin injection, and there are many spin injection methods in semiconductors, for example, injection is realized by using microwave through spin pumping, and injection is realized by using temperature gradient in combination with spin Seebeck effect (Seebeck effect), however, pure electrical injection is an important link for realizing spintronics, and the most representative spin injection structure is to inject spins into semiconductors from ferromagnetic metals through a tunneling layer. The method has the advantages that the device preparation process is simple, the spin detection can be realized through pure electrical measurement, and the method is one of the most common and successful research methods in the current-stage research and is closest to the application and integration of the device.
The problem of resistance mismatch between ferromagnetic metal and semiconductor has prevented the improvement of injection efficiency of this purely electrical spin injection method for a long time. The resistance mismatch here means that the spin resistance r is ρ λsfWhere ρ is the sample resistivity, λsfIs the spin diffusion distance. Since ferromagnetic metals have a small resistivity relative to semiconductors, the spin diffusion distance is also small, bothThe resistance mismatch is severe. When spin-polarized electrons are injected from a ferromagnetic metal into a semiconductor, the difference in resistivity causes a large amount of electrons to flow back to the metal, and the difference in spin diffusion distance causes a large amount of relaxation of spins at the interface. For this a.fert and h.jaffre's propose that the resistance mismatch problem can be solved by inserting a tunneling layer at the interface ([ 2)]Fert, a., and h. jaffres, Physical Review B64 (2001)). Later, experiments with a large number of materials have demonstrated that MgO is an ideal tunneling layer, which can largely solve the resistance mismatch problem and achieve spin injection efficiencies as high as 40% in GaAs bulk materials ([3 ]]Jiang,X.,et al.,Physical Review Letters 94(2005))。
However, spin injection into GaN bulk materials by MgO is currently only 7.9% ([4] Bhattacharya, Anerudha, Md Zunaid Baten, and Pallab Bhattacharya, Applied Physics Letters 108 (2016)). The main reason is that the existing commonly used MgO tunneling layer structure and GaN material have great lattice mismatch, and the single crystal growth is difficult to realize and a high-quality interface structure is formed. The spin injection efficiency in the two-dimensional electron gas of the GaN-based heterostructure is much lower. By MgO tunneling, spin-polarized electrons always pass through a barrier layer or a potential well layer with a certain thickness, which causes a serious spin relaxation problem, so that the spin injection efficiency is very low, and a large lattice mismatch problem exists between the MgO tunneling layer with a cubic structure and the GaN material with a wurtzite structure. The low efficiency of spin injection hinders the study of the two-dimensional electron gas spin properties of GaN-based heterostructure.
Disclosure of Invention
In order to solve the problem that when the two-dimensional electron gas in the GaN-based heterostructure is injected with spin, the spin relaxation is caused due to the fact that the thickness of a barrier layer is too large, and therefore the spin injection efficiency is reduced, the AlN/GaN heterostructure is adopted, the thickness of the barrier layer can be reduced as much as possible, meanwhile, AlN is used as a spin injection tunneling layer, single crystal growth can be achieved on GaN, high-quality crystal quality and high-quality interfaces are achieved, and spin injection is facilitated.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for injecting spin into two-dimensional electron gas in a GaN-based heterostructure is characterized in that an AlN/GaN heterostructure is prepared, the thickness of an AlN layer is controlled to be 1-3nm, and the AlN layer is simultaneously used as a barrier layer and a tunneling layer to perform spin electrical injection.
By controlling appropriate growth conditions, a very thin single crystal AlN can be epitaxially grown on GaN, and a two-dimensional electron gas is formed at the interface. The AlN epitaxial film with the thickness of 1-3nm is a barrier layer which can limit two-dimensional electron gas well and is also a good spin injection tunneling layer, and the AlN forbidden band width is 6.2eV which is much larger than the 3.4eV forbidden band width of GaN.
Specifically, in order to realize the method for injecting spin into the two-dimensional electron gas in the GaN-based heterostructure, the invention provides a semiconductor spin injection structure, which comprises a substrate, and a regrown GaN layer, a GaN thin layer, an AlN single crystal layer, a ferromagnetic layer and a protective metal layer which are sequentially extended on the substrate, wherein the thickness of the AlN single crystal layer is 1-3 nm.
Preferably, in the semiconductor spin injection structure of the present invention, the substrate is a GaN-on-Si template.
In one embodiment of the present invention, the substrate has a resistance of >100000 Ω and a total thickness of about 1 mm; the thickness of the GaN thin layer is about 120 nm; the AlN single crystal layer has a thickness of about 2 nm.
The material of the ferromagnetic layer can be Co or other hexagonal structure materials, so that the lattice mismatch between the ferromagnetic layer and AlN is reduced, better magnetism is obtained, and the thickness of 10nm can reach enough saturation magnetization.
The protective metal layer described above can prevent the material of the ferromagnetic layer from being oxidized. The material of the protective metal layer may be Au with a thickness of 5 nm.
The invention also provides a preparation method of the spin injection structure, which comprises the following steps:
1) sequentially growing a GaN layer, a GaN thin layer and an AlN single crystal layer on the substrate by adopting a molecular beam epitaxy or metal organic chemical vapor deposition method;
2) and depositing a ferromagnetic layer and a protective metal layer on the AlN single crystal layer in a vacuum environment without damaging the sample, and forming a spin injection electrode.
The method of forming the spin injection electrode of the above step 2) may be one of the following methods:
A. and sequentially depositing a ferromagnetic layer and a protective metal layer on the AlN single crystal layer, and controlling etching to stop in the AlN single crystal layer through photoetching and ion etching to obtain a spin injection electrode with a specific size.
B. And (2) spin-coating Hydrogen Silsesquioxane (HSQ) and a negative electron beam photoresist layer on the AlN single crystal layer in sequence, then exposing a spin injection electrode pattern by using an electron beam, developing to expose AlN in the shape of the electrode, then depositing a ferromagnetic layer and a protective metal layer, and stripping to obtain the spin injection electrode.
Two-dimensional electron gas in the existing relatively mature GaN-based heterostructure is formed by growing AlGaN/GaN heterostructure, and the thickness of AlGaN required is 10-20 nm. Therefore, when two-dimensional electron gas spin injection is carried out in the AlGaN/GaN heterostructure, spin-polarized electrons are firstly injected into the AlGaN layer and can reach the two-dimensional electron gas at the interface after certain relaxation occurs in 10-20nm AlGaN, and the relaxation resistance mismatch exists between the AlGaN and the two-dimensional electron gas, so that the spin relaxation is further increased. On the other hand, the AlGaN forbidden band width is between 3.4eV and 6.2eV, so that the sufficient barrier height is not easily formed, and the AlGaN forbidden band is not an excellent tunneling layer material for spin injection. The invention provides a method for preparing a spin injection device by using ultrathin AlN as a tunneling layer of spin injection and a barrier layer of two-dimensional electron gas, which not only simplifies the preparation process of the device, but also can greatly improve the spin injection efficiency, is more beneficial to the realization of a spin electronic device with excellent properties, and promotes the research on the spin properties of the two-dimensional electron gas in a GaN-based heterostructure.
Drawings
FIG. 1 is a schematic view of the AlN/GaN heterojunction and spin injection layer sample growth structure in example 1 of the present invention.
FIG. 2 is a schematic view of the resulting spin-injection junction prepared in example 1 of the present invention.
FIG. 3 is a schematic structural diagram of a sample after electron beam lithography in the process of preparing a spin-implanted junction in example 2 of the present invention.
FIG. 4 is a schematic view of a spin injection junction processed in example 2 of the present invention.
Fig. 5 is a schematic structural diagram of a low-temperature magnetic transport test performed on the three-terminal spin injection device prepared in embodiment 3 of the present invention.
FIG. 6 is an IV characteristic curve of Au/Co/AlN 2.5nm/GaN tunneling junction prepared in example 3 of the present invention.
FIG. 7 shows magneto-resistance signals of Au/Co/AlN 2.5nm/GaN spin injection junction caused by Hanle effect under different injection current and different temperature conditions, wherein: (a) the magneto-resistance signals caused by the Hanle effect are respectively measured by an Au/Co/AlN 2.5nm/GaN spin injection junction under the condition of 500 mu A alternating current injection and under the magnetic fields vertical to the surface and at 100K, 200K and 300K; (b) the magneto-resistance signal is caused by the Hanle effect obtained under the conditions that Au/Co/AlN 2.5nm/GaN spin injection junctions are injected under 100K and alternating currents of different sizes are injected.
In the figure: 1-substrate, 2-regrown GaN layer, 3-GaN thin layer, 4-AlN single crystal layer, 5-ferromagnetic layer, 6-protective metal layer, 7-negative electron beam photoresist layer and 8-protective layer.
Detailed Description
Referring to fig. 1, the structure for injecting spin into a two-dimensional electron gas in an AlN/GaN heterostructure based on an AlN tunneling layer provided by the present invention sequentially includes, from bottom to top: the GaN-based substrate comprises a substrate 1, a regrown GaN layer 2, a GaN thin layer 3, an AlN single crystal layer 4, a ferromagnetic layer 5 and a protective metal layer 6.
Example 1
The preparation of the spin injection structure and the spin electrical injection are realized by the following steps:
s1: sequentially growing a GaN layer 2, a GaN thin layer 3 and a high-quality AlN single crystal layer 4 on a substrate 1 by adopting a molecular beam epitaxy or metal organic chemical vapor deposition method; in order to prevent AlN oxidation, after growing the high-quality AlN single crystal layer 4, the growth of the ferromagnetic layer 5 and the protective metal layer 6 was continued while keeping the sample in a vacuum environment.
In the step S1, the GaN template substrate is grown by MOCVD to a thickness of about 1 mm; the high-quality GaN thin layer 3 is grown by using MBE, and the thickness is about 120 nm; the high-quality AlN single-crystal layer 4 is grown using MBE and has a thickness of about 2 nm; the material Co of the ferromagnetic layer 5 is evaporated by electron beams, and the thickness is 10 nm; the material Au of the protective metal layer 6 was deposited by electron beam evaporation to a thickness of 5 nm.
S2: preparing a mask on the sample obtained in the step S1 by ultraviolet lithography, then performing ion etching with element monitoring, controlling the etching to stop in the AlN layer, thereby realizing the preparation of a spin injection electrode of a specific size, and obtaining a structure as shown in fig. 2.
Example 2
The procedure of this example is substantially the same as example 1 except that it is difficult to maintain the same degree of vacuum in consideration of the growth of AlN and the ferromagnetic layer. After growing the high-quality AlN single crystal layer 4, Hydrogen Silsesquioxane (HSQ), about 200nm, was spin-coated in the same vacuum atmosphere, which was sufficient to ensure its subsequent performance for insulation. A negative e-beam resist layer 7 is then spin coated for ferromagnetic metal electrode lift-off. Exposing the electrode pattern by electron beam, developing to expose AlN under the electrode shape, and changing HSQ into SiO-like material2Protective layer 8 of this nature, as shown in figure 3. In this embodiment, the protective layer 8 is mainly used to prevent AlN from oxidizing, and serves as an insulating layer to isolate the source/drain electrodes from the sample, thereby preventing leakage current. Then, a ferromagnetic layer 5 and a protective metal layer 6 are deposited and peeled off to obtain a spin injection electrode, as shown in fig. 4.
By combining HSQ with negative electron beam photoresist, AlN is prevented from being damaged by the shape of an etching electrode, so that the damage of the property of two-dimensional electron gas at a spin transport channel is avoided, and a complete spin electronic device can be better realized.
Example 3
The spin injection junction obtained by the method described in example 3 can be used to achieve spin injection.
In the experimental process of the spinning electric injection, AlN and Co can not be simultaneously grown under the condition of not damaging vacuum, or HSQ is spun, and in order to reduce the exposure time of AlN in the air as much as possible, SiO is grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) in the experiment2Instead of HSQ to protect AlN, the AlN surface has several atomic layers of Al2O3Spin injection can also be achieved without affecting the effect of the tunneling junction. The three-terminal spin injection device shown in fig. 5 was subjected to low-temperature magnetic transport to measure the spin injection effect.FIG. 6 shows an IV characteristic curve of Au/Co/AlN 2.5nm/GaN tunneling junction shown in FIG. 5, which indicates that 2.5nm AlN exhibits a primary tunneling characteristic and can be used as a spin-injection tunneling layer. Therefore, the AlN can be used as a tunneling junction, solves the problem of resistance mismatch, and can be used for realizing the research on the spin transport property of the two-dimensional electron gas.
FIG. 7 shows the magneto-resistive signals of Au/Co/AlN 2.5nm/GaN spin-injection junction due to the Hanle effect under different injection currents and different temperature conditions, indicating the presence of spin-into-GaN injection. Wherein (a) is a magneto-resistance signal caused by the Hanle effect measured by an Au/Co/AlN 2.5nm/GaN spin injection junction under the condition of 500 mu A alternating current injection and under the conditions of 100K, 200K and 300K applied with a magnetic field vertical to the surface respectively. By the formula V3T(Bz)＝V3T(0)/[1+(ωτs)]The fitting results in spin relaxation lifetimes of 3.81ps, 3.69ps, and 2.77ps, respectively. The service life is reduced along with the temperature rise, and the general rule obtained in the past literature is met.
(b) The magneto-resistance signal is caused by the Hanle effect obtained under the conditions that Au/Co/AlN 2.5nm/GaN spin injection junctions are injected under 100K and alternating currents of different sizes are injected.
The above-mentioned embodiments are merely illustrative of the technical ideas and features of the present invention, and the description thereof is specific and detailed, so as to enable those skilled in the art to understand the contents of the present invention and implement the same, therefore, the scope of the present invention should not be limited by the above-mentioned embodiments, but should not be construed as being limited by the scope of the present invention. It should be noted that variations and modifications can be effected without departing from the spirit of the invention, which is within the scope of the invention as defined by the appended claims.
Claims (8)
1. A semiconductor spin injection structure is a structure for performing spin electrical injection on GaN-based two-dimensional electron gas and comprises a substrate, and a regrown GaN layer, a GaN thin layer, an AlN single crystal layer, a ferromagnetic layer and a protective metal layer which are sequentially epitaxial on the substrate, wherein the thickness of the AlN single crystal layer is 1-3nm, the AlN layer is used as a barrier layer to form the two-dimensional electron gas at an AlN/GaN interface, and the AlN layer is used as a tunneling layer to perform spin electrical injection on the two-dimensional electron gas.
2. The semiconductor spin injection structure of claim 1, wherein the substrate is a GaN-on-Si template.
3. A semiconductor spin injection structure according to claim 1, wherein the substrate has a resistance of more than 100000 Ω and a thickness of 1 mm; the thickness of the GaN thin layer is 120 nm; the AlN single crystal layer is 2nm thick.
4. The semiconductor spin injection structure of claim 1, wherein the material of the ferromagnetic layer is a hexagonal structure material.
5. The semiconductor spin injection structure of claim 4, wherein the material of the ferromagnetic layer is Co.
6. The semiconductor spin injection structure of claim 1, wherein the material of the protective metal layer is Au.
7. A method of fabricating a semiconductor spin injection structure according to any of claims 1 to 6, comprising the steps of:
1) sequentially growing a GaN layer, a GaN thin layer and an AlN single crystal layer on the substrate by adopting a molecular beam epitaxy or metal organic chemical vapor deposition method;
2) and depositing a ferromagnetic layer and a protective metal layer on the AlN single crystal layer in a vacuum environment, and forming a spin injection electrode.
8. The method of manufacturing according to claim 7, wherein the method of forming the spin injection electrode in step 2) is one of the following methods:
A. depositing a ferromagnetic layer and a protective metal layer on the AlN single crystal layer in sequence, and controlling etching to stop in the AlN single crystal layer through photoetching and ion etching to obtain a spin injection electrode with a specific size;
B. and sequentially spin-coating hydrogen silsesquioxane and a negative electron beam photoresist layer on the AlN single crystal layer, exposing a spin injection electrode pattern by using an electron beam, developing to expose the AlN in the shape of the electrode, depositing a ferromagnetic layer and a protective metal layer, and stripping to obtain the spin injection electrode.
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| CN110429135A (en) | 2019-11-08 |
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