CN112059349A - Welding method of titanium target and copper back plate - Google Patents

Welding method of titanium target and copper back plate Download PDF

Info

Publication number
CN112059349A
CN112059349A CN202010896518.3A CN202010896518A CN112059349A CN 112059349 A CN112059349 A CN 112059349A CN 202010896518 A CN202010896518 A CN 202010896518A CN 112059349 A CN112059349 A CN 112059349A
Authority
CN
China
Prior art keywords
welding
back plate
acid treatment
titanium target
copper back
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010896518.3A
Other languages
Chinese (zh)
Inventor
姚力军
边逸军
潘杰
王学泽
侯娟华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Jiangfeng Electronic Material Co Ltd
Original Assignee
Ningbo Jiangfeng Electronic Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo Jiangfeng Electronic Material Co Ltd filed Critical Ningbo Jiangfeng Electronic Material Co Ltd
Priority to CN202010896518.3A priority Critical patent/CN112059349A/en
Publication of CN112059349A publication Critical patent/CN112059349A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a welding method of a titanium target and a copper back plate, which comprises the following steps: (1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; (2) and then adding solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain the titanium target material assembly. According to the welding method provided by the invention, through special treatment on the welding surface, namely sand blasting and acid treatment are sequentially adopted, the coupling effect between the sand blasting and the acid treatment is utilized, the welding combination rate is obviously improved, the welded product is not deformed, and meanwhile, the back plate can be reused.

Description

Welding method of titanium target and copper back plate
Technical Field
The invention relates to the field of target welding, in particular to a method for welding a titanium target and a copper back plate.
Background
The coating target is a sputtering source which forms various functional films on a substrate by sputtering through magnetron sputtering, multi-arc ion plating or other types of coating systems under proper process conditions.
In order to meet the sputtering requirement of the target in use, the target is generally welded with a back plate, for example, CN107914075A discloses a target welding method, which comprises: providing a target material and a back plate; placing a thin sheet-like intermediate layer serving as a solder between the target and the back plate; bombarding the intermediate layer by adopting an electron beam to enable the intermediate layer to be rapidly melted and filled between the target material and the back plate welding to realize welding; the material of the intermediate layer is 4 series aluminum alloy. The target welding method reduces the possibility of cracks or air hole defects in electron beam welding under the condition of not increasing the welding times.
WO2015085650A1 discloses a diffusion welding method of a W-Ti alloy target assembly for coating, which comprises the steps of placing a W-Ti alloy target powder raw material and a corresponding plate blank material to be welded and compounded into a hot-pressing die and placing the hot-pressing die and the plate blank material into a hot-pressing sintering furnace, and carrying out hot-pressing sintering molding on a target blank and diffusion welding on the target blank and the plate blank at one time to obtain a welded and compounded W-Ti alloy target assembly; or taking the plate blank as a back plate or a transition layer to obtain a W-Ti alloy target assembly or a W-Ti alloy target/transition layer/back plate composite three-layer structure. The method realizes synchronous hot-pressing sintering molding of the target blank and hot-pressing diffusion welding of the target blank and the plate blank, and the welding tensile strength is more than 50 MPa.
CN108544045A discloses a tungsten target welding method and a tungsten target assembly, in which the tungsten target welding method first performs pre-welding processing and cleaning on a tungsten target and a copper back plate, places a solder drainage piece between the tungsten target and the copper back plate, then performs brazing on the tungsten target and the copper back plate by using a brazing process to obtain the tungsten target assembly, and cools the tungsten target assembly. The tungsten target welding method places the solder drainage piece between the tungsten target and the copper back plate before welding, so that the uniform distribution of the solder between the tungsten target and the copper back plate is ensured, and the uniformity of a welding seam, the success rate of welding and the stability of welding are improved.
However, in the existing welding method, the problems of low bonding rate, product deformation and the like still exist after the target and the back plate are welded.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a welding method for a titanium target and a copper backing plate, which can remarkably improve the welding bonding rate, prevent the welded product from deforming, and simultaneously can reuse the backing plate.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence;
(2) and then adding solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain the titanium target material assembly.
According to the welding method provided by the invention, through special treatment on the welding surface, namely sand blasting and acid treatment are sequentially adopted, the coupling effect between the sand blasting and the acid treatment is utilized, the welding combination rate is obviously improved, a welded product is not deformed, and meanwhile, the back plate and the welding flux can be reused.
As a preferable technical scheme of the invention, the sand blasting in the step (1) is carried out by using quartz sand.
As a preferable embodiment of the present invention, the roughness after the blast treatment in the step (1) is 60 to 100. mu.m, and may be, for example, 60. mu.m, 70. mu.m, 80. mu.m, 90. mu.m, or 100. mu.m, but is not limited to the above-mentioned values, and other values not listed in the above range are also applicable.
As a preferable technical scheme of the invention, the acid treatment in the step (1) is treatment by concentrated hydrochloric acid.
In a preferred embodiment of the present invention, the mass concentration of the concentrated hydrochloric acid is 30 to 36%, and may be, for example, 30%, 31%, 32%, 33%, 34%, 35%, or 36%, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
As a preferred embodiment of the present invention, the temperature of the acid treatment in the step (1) is 30 to 40 ℃ and may be, for example, 30 ℃, 31 ℃, 32 ℃, 33 ℃, 34 ℃, 35 ℃, 36 ℃, 37 ℃, 38 ℃, 39 ℃ or 40 ℃, but not limited to the recited values, and other values not recited in the range are also applicable.
Preferably, the acid treatment time is 10 to 20min, for example, 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min or 20min, etc., but is not limited to the recited values, and other values not recited in the range are also applicable.
In a preferred embodiment of the present invention, the solder in the step (2) is an indium solder.
As a preferred embodiment of the present invention, the temperature of the brazing in the step (2) is 290 ℃ to 300 ℃, and for example, 290 ℃, 291 ℃, 292 ℃, 293 ℃, 294 ℃, 295 ℃, 296 ℃, 297 ℃, 298 ℃, 299 ℃ or 300 ℃ may be used, but the present invention is not limited to the above-mentioned values, and other values not listed in the range are also applicable.
Preferably, the brazing time in step (2) is 15-20min, such as 15min, 16min, 17min, 18min, 19min or 20min, but not limited to the recited values, and other values not recited in the range are also applicable.
In a preferred embodiment of the present invention, after the brazing in step (2) is completed, the pressure is cooled under pressure to a pressure of 10 to 20MPa, for example, 10MPa, 11MPa, 12MPa, 13MPa, 14MPa, 15MPa, 16MPa, 17MPa, 18MPa, 19MPa, or 20MPa, but the present invention is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the pressure cooling time is 15-20min, such as 15min, 16min, 17min, 18min, 19min or 20min, but not limited to the recited values, and other values not recited in this range are also applicable.
As a preferred technical solution of the present invention, the welding method includes the steps of:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 60-100 μm, and the acid treatment is carried out by adopting concentrated hydrochloric acid with the mass concentration of 30-36% at 30-40 ℃ for 10-20 min;
(2) and then adding solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain the titanium target material assembly.
In the invention, the titanium target component is obtained by welding a titanium target and a copper back plate.
Compared with the prior art, the invention at least has the following beneficial effects:
according to the welding method provided by the invention, through special treatment on the welding surface, namely sand blasting and acid treatment are sequentially adopted, the coupling effect between the sand blasting and the acid treatment is utilized, the welding bonding rate is obviously improved to be more than or equal to 95%, a welded product is not deformed, meanwhile, the back plate and the welding flux can be repeatedly used, and the service life is also prolonged.
Detailed Description
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 80 μm, and the acid treatment is carried out for 15min at 35 ℃ by adopting concentrated hydrochloric acid with the mass concentration of 33%;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 295 ℃, and the time is 17 min; and after the welding is finished, carrying out pressure cooling under the pressure of 15MPa for 18 min.
The welding bonding rate of the obtained target assembly is 95%, deformation is avoided, and the service life is long.
Example 2
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 100 mu m, and the acid treatment is to adopt concentrated hydrochloric acid with the mass concentration of 36 percent to treat for 10min at 30 ℃;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 300 ℃, and the welding time is 20 min; and after the welding is finished, carrying out pressure cooling, wherein the pressure is 10MPa, and the pressure cooling time is 20 min.
The welding bonding rate of the obtained target assembly is 97%, deformation is avoided, and the service life is long.
Example 3
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 60 mu m, and the acid treatment is to adopt concentrated hydrochloric acid with the mass concentration of 30 percent to treat for 20min at 40 ℃;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 290 ℃, and the time is 15 min; and after the welding is finished, carrying out pressure cooling under the pressure of 20MPa for 15 min.
The welding bonding rate of the obtained target assembly is 96%, deformation is avoided, and the service life is long.
Example 4
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 70 μm, and the acid treatment is carried out for 12min at 37 ℃ by adopting concentrated hydrochloric acid with the mass concentration of 35%;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 292 ℃, and the welding time is 19 min; and after the welding is finished, carrying out pressure cooling under the pressure of 13MPa for 16 min.
The welding bonding rate of the obtained target assembly is 98%, deformation is avoided, and the service life is long.
Example 5
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 90 μm, and the acid treatment is carried out for 18min at 32 ℃ by adopting concentrated hydrochloric acid with the mass concentration of 31%;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 297 ℃ and the time is 18 min; and after the welding is finished, carrying out pressure cooling under the pressure of 16MPa for 18 min.
The welding bonding rate of the obtained target assembly is 97%, deformation is avoided, and the service life is long.
Example 6
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 100 mu m, and the acid treatment is to adopt concentrated hydrochloric acid with 35 percent of mass concentration to carry out treatment for 11min at 36 ℃;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 290 ℃, and the time is 17 min; and after the welding is finished, carrying out pressure cooling under the pressure of 16MPa for 20 min.
The welding bonding rate of the obtained target assembly is 99%, deformation is avoided, and the service life is long.
Example 7
The embodiment provides a welding method of a titanium target and a copper back plate, which comprises the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 88 μm, and the acid treatment is carried out for 13min at 33 ℃ by adopting concentrated hydrochloric acid with the mass concentration of 32%;
(2) then adding indium solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain a titanium target material assembly; the welding temperature is 294 ℃, and the time is 17 min; and after the welding is finished, carrying out pressure cooling under the pressure of 13MPa for 17 min.
The welding bonding rate of the obtained target assembly is 97%, deformation is avoided, and the service life is long.
Comparative example 1
The difference from example 1 is only that the target assembly obtained without sandblasting had a weld bonding rate of 75%, with slight distortion.
Comparative example 2
The difference from example 1 is that the target assembly obtained without acid treatment had a weld bonding ratio of 80%, with slight variations.
Comparative example 3
The only difference from example 1 was that the roughness of the bonding surface after sandblasting was 30 μm, and the bonding ratio of the resulting target assembly by welding was 90%, with slight distortion.
Comparative example 4
The only difference from example 1 was that the roughness of the bonding surface after sandblasting was 150 μm, and the bonding ratio of the resulting target assembly by welding was 89%, with slight distortion.
Comparative example 5
The difference from example 1 is only that the acid solution is replaced by sodium hydroxide solution with equal concentration, and the welding bonding rate of the target assembly is 75%, and the target assembly is slightly deformed.
Comparative example 6
The difference from example 1 is only that the acid solution is replaced by the sulfuric acid solution with equal concentration, and the welding bonding rate of the target assembly is 88%, and the target assembly is slightly deformed.
According to the results of the embodiment and the comparative example, the welding method provided by the invention has the advantages that the special treatment of the welding surface is realized by sequentially adopting sand blasting and acid treatment, the coupling effect between the sand blasting and the acid treatment is utilized, the welding bonding rate is obviously improved to be more than or equal to 95%, the welded product is not deformed, meanwhile, the back plate can be reused, and the service life is prolonged.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.

Claims (10)

1. A welding method of a titanium target and a copper back plate is characterized by comprising the following steps:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence;
(2) and then adding solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain the titanium target material assembly.
2. The welding method of claim 1, wherein said blasting of step (1) is performed using quartz sand.
3. The welding method according to claim 1 or 2, wherein the roughness after the blast treatment in the step (1) is 60 to 100 μm.
4. A welding method according to any one of claims 1 to 3, wherein said acid treatment in step (1) is treatment with concentrated hydrochloric acid.
5. The welding method according to claim 4, wherein the mass concentration of the concentrated hydrochloric acid is 30 to 36%.
6. The welding method according to any one of claims 1 to 5, wherein the temperature of the acid treatment in step (1) is 30 to 40 ℃;
preferably, the acid treatment time is 10-20 min.
7. The soldering method according to claim 1 to 6, wherein the solder in step (2) is an indium solder.
8. The welding method according to any one of claims 1 to 7, wherein the temperature of the brazing in the step (2) is 290 ℃ to 300 ℃;
preferably, the brazing time in the step (2) is 15-20 min.
9. The welding machine method as defined in any one of claims 1 to 8, wherein after the brazing in step (2) is finished, pressure cooling is performed, and the pressure is 10 to 20 MPa;
preferably, the time of the pressurized cooling is 15-20 min.
10. Welding method according to any one of claims 1-9, characterized in that it comprises the steps of:
(1) carrying out sand blasting and acid treatment on the welding surfaces of the titanium target and the copper back plate in sequence; the roughness after sand blasting is 60-100 μm, and the acid treatment is carried out by adopting concentrated hydrochloric acid with the mass concentration of 30-36% at 30-40 ℃ for 10-20 min;
(2) and then adding solder to the welding surface of the titanium target material and the copper back plate after acid treatment, and then performing brazing to obtain the titanium target material assembly.
CN202010896518.3A 2020-08-31 2020-08-31 Welding method of titanium target and copper back plate Pending CN112059349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010896518.3A CN112059349A (en) 2020-08-31 2020-08-31 Welding method of titanium target and copper back plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010896518.3A CN112059349A (en) 2020-08-31 2020-08-31 Welding method of titanium target and copper back plate

Publications (1)

Publication Number Publication Date
CN112059349A true CN112059349A (en) 2020-12-11

Family

ID=73665152

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010896518.3A Pending CN112059349A (en) 2020-08-31 2020-08-31 Welding method of titanium target and copper back plate

Country Status (1)

Country Link
CN (1) CN112059349A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113649773A (en) * 2021-08-25 2021-11-16 宁波江丰电子材料股份有限公司 Preparation method of large-size panel aluminum target

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102383099A (en) * 2011-11-14 2012-03-21 余姚康富特电子材料有限公司 Method for manufacturing target material structure
CN102586743A (en) * 2011-11-30 2012-07-18 余姚康富特电子材料有限公司 Manufacture method of target structure
CN102605331A (en) * 2011-12-16 2012-07-25 余姚康富特电子材料有限公司 Method for manufacturing target component
CN104259644A (en) * 2014-07-24 2015-01-07 有研亿金新材料有限公司 Welding method of tungsten-titanium alloy target
CN106378507A (en) * 2015-07-30 2017-02-08 宁波江丰电子材料股份有限公司 Method for welding tungsten-titanium target material assembly
CN106521433A (en) * 2015-09-09 2017-03-22 宁波江丰电子材料股份有限公司 Ring part structure and machining method thereof
US20170229295A1 (en) * 2016-02-09 2017-08-10 Honeywell International Inc. Sputtering device component with modified surface and method of making
CN111015111A (en) * 2019-12-23 2020-04-17 有研亿金新材料有限公司 Diffusion welding method for large-size titanium target and copper back plate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102383099A (en) * 2011-11-14 2012-03-21 余姚康富特电子材料有限公司 Method for manufacturing target material structure
CN102586743A (en) * 2011-11-30 2012-07-18 余姚康富特电子材料有限公司 Manufacture method of target structure
CN102605331A (en) * 2011-12-16 2012-07-25 余姚康富特电子材料有限公司 Method for manufacturing target component
CN104259644A (en) * 2014-07-24 2015-01-07 有研亿金新材料有限公司 Welding method of tungsten-titanium alloy target
CN106378507A (en) * 2015-07-30 2017-02-08 宁波江丰电子材料股份有限公司 Method for welding tungsten-titanium target material assembly
CN106521433A (en) * 2015-09-09 2017-03-22 宁波江丰电子材料股份有限公司 Ring part structure and machining method thereof
US20170229295A1 (en) * 2016-02-09 2017-08-10 Honeywell International Inc. Sputtering device component with modified surface and method of making
CN111015111A (en) * 2019-12-23 2020-04-17 有研亿金新材料有限公司 Diffusion welding method for large-size titanium target and copper back plate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
丛树毅等: "《熔焊基础与金属材料焊接》", 31 March 2016, 北京理工大学出版社 *
陈亚等: "《现代实用电镀技术》", 31 January 2003, 国防工业出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113649773A (en) * 2021-08-25 2021-11-16 宁波江丰电子材料股份有限公司 Preparation method of large-size panel aluminum target

Similar Documents

Publication Publication Date Title
CN104259644B (en) A kind of welding method of tungsten-titanium alloy target
TWI498435B (en) Sputter target assembly having a low-temperature high-strength bond
KR20140030282A (en) A sputtering target as well as a joined type sputtering target assembly and a method of making such a joined type sputtering target assembly
CN112676782B (en) Method for assembling titanium target and copper back plate
CN111468815B (en) Aluminum alloy diffusion bonding method without intermediate layer
CN111136396A (en) Diffusion welding method for copper target and back plate
CN112059349A (en) Welding method of titanium target and copper back plate
JP2001032065A (en) Method for bonding sputtering target to receiving board
CN113385893A (en) Preparation method of niobium-copper composite part
CN113305412A (en) Diffusion welding method for tungsten target and copper back plate
KR100348437B1 (en) How to Make Sputtering Target Assemblies and New Target Assemblies
CN113458528A (en) Target material assembly and welding method and application thereof
CN115255597B (en) Magnesium alloy surface plasticizing diffusion connection method
CN112708862A (en) Preparation method of tungsten-titanium alloy target blank
EP3543373A1 (en) Method for coating electrode for resistance welding, and electrode for resistance welding
CN112975102B (en) Diffusion welding method for cobalt target and copper backboard
CN111005015A (en) Method for preparing gradient coating by steel surface cold spraying/laser gas nitriding compounding
CN107419212B (en) Surface treatment method for automobile chassis parts
CN113828881A (en) Brazing method for polycrystalline silicon target and copper back plate
CN113337799A (en) Tubular target material and preparation method thereof
CN107914075A (en) Target material welding method
CN114918576B (en) Tungsten carbide binding target and preparation method thereof
CN111663134A (en) Method for producing titanium steel composite plate by metal powder solid deposition-rolling
CN114059028B (en) Copper backboard brazing structure and processing method thereof
CN110788471A (en) Metal welding method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20201211

RJ01 Rejection of invention patent application after publication