CN112054078B - Method and device for designing width of thin film solar cell and thin film solar cell - Google Patents
Method and device for designing width of thin film solar cell and thin film solar cell Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a width-saving design method of a thin-film solar cell, relates to the technical field of thin-film solar cells, and can improve the conversion efficiency of the whole cell. The method comprises the following steps: s1, forming a thin film solar cell sample comprising a plurality of sub-cells according to the width of a first cell; s2, obtaining quantum efficiency test information of sub-cells in an edge area and a middle area of the thin film solar cell sample in the cell width direction; and S3, optimizing the cell widths of all the sub-cells in the edge area of the thin film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area so that the current intensity of all the sub-cells in the edge area is consistent with the current intensity of the sub-cells in the middle area.
Description
Technical Field
The present invention relates to the technical field of thin film solar cells, and in particular, to a method and an apparatus for designing the width of a thin film solar cell, and a thin film solar cell.
Background
The thin film solar cell has the advantages of low raw material consumption, easiness in large-area continuous production, low pollution in the preparation process and the like.
A thin film battery production process comprises the following steps: (1) depositing a conductive film on a substrate; (2) Scribing the conductive film into a plurality of areas along one direction of the substrate by utilizing laser scribing or mechanical scribing to form the insulation grooves of the subcells, wherein the scribing process is commonly called P1 scribing; (3) Depositing a photon absorption layer on the substrate on which the P1 scribing is completed; (4) The P1 scribe is used as a reference, and the photon absorption layer is scribed off by laser scribing or mechanical scribing at a position where the scribe line of the P1 scribe is offset to the right (or left) by a certain distance (for example, 50-80 um) to form a trench. Conductive structures connecting adjacent subcells may be subsequently formed in the trenches. The scribing process at this point is commonly referred to as P2 scribing; (5) Depositing a layer of conductive film on the photon absorption layer with the P2 scribing, wherein the grooves formed by the P2 scribing finally form a conductive structure for connecting adjacent subcells due to the existence of the conductive film; (6) The P2 scribing is used as a reference, the scribing lines of the P2 scribing are offset to the right (or left) by a certain distance (for example, 50-80 um) by utilizing laser scribing or mechanical scribing, the photon absorption layer and the conductive film are scribed together to form a plurality of sub-cells, and the adjacent sub-cells form a series circuit through the conductive structure. The scribing process at this point is commonly referred to as P3 scribing; (7) Etching all film layers around the substrate by utilizing laser or mechanical etching, wherein the etching width is 8-15 mm, and the etching process is commonly called P4 etching; (8) And continuing the subsequent packaging lamination process to manufacture the photovoltaic module.
The sub-battery is the minimum sub-unit of the film battery, and the output voltage is improved by the series connection of the sub-battery. For the thin film cells formed by the P1-P3 scribe described above, the width of each subcell can be measured by the spacing between adjacent two P1 scribe lines. In the conventional thin film solar cell design known by the inventors, the optimal width (i.e., cell pitch width) of each sub-cell is calculated from the current density and voltage of the optimal power point. The inventors found that even if the widths of the sub-cells on the battery sheet are designed to be the optimal widths calculated by the optimal power point, the actual power of the battery sheet still differs far from the optimal power point.
Disclosure of Invention
In order to solve the problems, the invention provides a method and a device for designing the section width of a thin film solar cell and the thin film solar cell, wherein the section width of two sides of the edge of the thin film solar cell is optimally designed, so that the conversion efficiency of the whole cell can be improved.
The embodiment of the disclosure provides a width-saving design method of a thin film solar cell, which comprises the following steps:
s1, forming a thin film solar cell sample comprising a plurality of sub-cells according to the width of a first cell;
s2, carrying out quantum efficiency test on the subcells of the thin-film solar cell sample, and obtaining quantum efficiency test information of the subcells of the edge area and the middle area of the thin-film solar cell sample in the cell width direction;
and S3, optimizing the cell widths of all the sub-cells in the edge area of the thin film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area so that the current intensity of all the sub-cells in the edge area is consistent with the current intensity of the sub-cells in the middle area.
The embodiment of the disclosure also provides a width-saving design device of the thin film solar cell, which comprises:
the quantum efficiency testing device is used for carrying out quantum efficiency testing on the sub-cells of the thin film solar cell sample so as to obtain quantum efficiency testing information of the sub-cells of the edge area and the middle area of the thin film solar cell sample in the cell width direction, wherein each sub-cell of the thin film solar cell sample is provided with a first cell width;
and the calculating device optimizes the cell width of each sub-cell of the edge area of the thin film solar cell sample according to the quantum efficiency test information of the edge area and the middle area so as to enable the current intensity of each sub-cell of the edge area to be consistent with the current intensity of each sub-cell of the middle area.
Embodiments of the present disclosure also provide a thin film solar cell comprising a plurality of subcells, the thin film solar cell comprising a middle region and an edge region; wherein each sub-cell of the intermediate region has a first cell width; each sub-cell of the edge region has an optimized cell width based on the first cell width, and the optimized cell width enables the current intensity of the sub-cell of the edge region to be consistent with the current intensity of the sub-cell of the middle region.
In the related art, the cell widths of all the sub-cells of the thin film solar cell are the same, and the cell widths of the sub-cells of the two side edge regions of the thin film solar cell are not designed separately. Since the film quality of the photon absorbing layers in the edge regions on both sides is the worst region in the whole cell for the thin film solar cell, the Quantum Efficiency (QE) is low, resulting in that the current density of the subcell in the edge region is significantly smaller than that in the subcell in other regions, i.e., the current intensity (current intensity=current density×subcell area) of the subcell in the edge region is also smaller than that in the subcell in other regions. Since the entire thin film solar cell is formed by connecting the sub-cells in series, the current intensity of the entire thin film solar cell is determined by the sub-cell having the lowest current intensity among the sub-cells, which affects the efficiency of the entire thin film solar cell.
The embodiment of the invention provides a width-saving design method of a thin-film solar cell, which is used for optimally designing the width-saving of the edge of the thin-film solar cell aiming at the condition that light absorption layers on two sides of the thin-film solar cell are thinner than a middle area and the quality of the thin-film layer is poor, so that the current intensity of each sub-cell in the edge area is consistent with the current intensity of the middle area, the power generation power of each sub-cell is consistent as much as possible, and the conversion efficiency of the whole cell can be improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate and do not limit the invention.
Fig. 1 is a schematic diagram of a cell width-saving design scheme of a thin film solar cell provided in the related art;
fig. 2 is a schematic structural diagram of a thin film solar cell according to the related art;
fig. 3 is a flowchart of a method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
fig. 4 is a flowchart of a method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
fig. 5 is a flowchart III of a method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
FIG. 6 is a graph showing quantum efficiency test results for a thin film solar cell sample in some embodiments of the present disclosure;
fig. 7 is a view showing a cell width of a sub-cell designed according to fig. 6, taking an amorphous silicon thin film cell as an example;
fig. 8 is a cell width of a further sub-cell designed by taking an amorphous silicon thin film cell as an example;
fig. 9 is a cell width of another sub-cell designed for an example of an amorphous silicon thin film cell;
fig. 10 is a schematic diagram of a thin film solar cell provided in some embodiments of the present disclosure;
fig. 11 is a schematic diagram of a width-saving design device of a thin film solar cell according to some embodiments of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention.
In the preparation process of the thin film solar cell, uniformity of a film layer is a key index for influencing quality of the film layer all the time, and electric performance parameters of the solar cell are greatly affected. As shown in fig. 1, a cell width-saving design scheme of a thin film solar cell provided in the related art is shown. As shown in fig. 2, a first conductive film layer 5, a photon absorption layer 6 and a second conductive film layer 7 are disposed on a substrate 4, and cell strings connected in series with each other are formed on the substrate 4 by scribing P1/P2/P3. The cell width of each sub-cell of the cell string is D. As shown in FIG. 1, the solar thin film cell scored by P1/P2/P3 has a uniform score line 3 distributed in the film layer 1 on the substrate 4. That is, the width of each sub-cell of the thin film solar cell is uniform and consistent, and the current intensity of each sub-cell is theoretically the same. Current intensity = current density x subcell area. Ideally, the current density of each sub-cell should be uniform due to the simultaneous coating. However, in practice, the current intensity of each sub-cell is not uniform due to the problem of uniformity of the plating film in each region. Because each sub-cell is connected in series in the whole thin film solar cell, the current intensity of the whole thin film solar cell is determined by the sub-cell with the lowest current intensity in the sub-cells, namely, the current intensity of the sub-cells in the side edge area determines the current intensity of the whole cell, which is also the key for influencing the efficiency of the whole cell.
According to the technical scheme provided by the embodiment of the disclosure, on the basis of the uniform cell width D of the existing thin film solar cell, the current intensity of the sub-cells in the edge area is increased by increasing the cell widths of the sub-cells in the area with poor quality of the edge film layers at two sides, so that the current intensities of all the sub-cells are matched, and the conversion efficiency of the whole cell is improved. The method does not need to improve the cost, and has obvious effect.
Thin film solar cells of the present disclosure include, but are not limited to, amorphous silicon thin film cells, microcrystalline silicon thin film cells, copper indium gallium selenide thin film cells, thin film cells of a telluride spacer, and the like, forming a series circuit.
The aspects of the present disclosure are further described below.
As shown in fig. 3, some embodiments of the present disclosure provide a method for designing a width of a thin film solar cell, including:
s1, forming a thin film solar cell sample comprising a plurality of sub-cells according to the width of a first cell;
the thin film solar cell sample is produced by the same production line as the thin film solar cell with the cell section width to be designed, the materials of each film layer are consistent with the production process, and the cell section widths of only the sub-cells are different.
This step can form a thin film solar cell sample as shown in fig. 1 according to the related art. The cell width of the thin film solar cell sample is equal, for example, the first cell width is D. In the embodiment, on the basis of a thin film solar cell sample with the cell width D, the cell width of a sub-cell at the edge of the sample is optimally designed.
In addition, in order to improve the test accuracy and the optimization effect, a plurality of thin film solar cell samples can be formed in the step.
S2, carrying out quantum efficiency test on the subcells of the thin-film solar cell sample, and obtaining quantum efficiency test information of the subcells of the edge area and the middle area of the thin-film solar cell sample in the cell width direction;
the width direction of the battery is the distribution direction of the sub-batteries connected in series. If the thin film solar cell is formed by the P1/P2/P3 scribing, the cell width-saving direction is the direction perpendicular to the P1/P2/P3 scribing direction. The method aims to acquire quantum efficiency test information of sub-cells in an edge area and a middle area of the battery in a battery width direction, so that the battery width of each sub-cell in the edge area is optimized according to the quantum efficiency test information of the sub-cell in the middle area in the subsequent steps.
And S3, optimizing the cell widths of all the sub-cells in the edge area of the thin film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area so that the current intensity of all the sub-cells in the edge area is consistent with the current intensity of the middle area.
In the thin film solar cell, the quality of the film layer (mainly, the photon absorption layer) in the edge region is poor, and in general, the closer to the edge, the quality of the film layer is poor, and when the widths of the sub-cells are equal in length, the quantum efficiency of the corresponding sub-cell is lower. In step S3, the cell width of each sub-cell in the edge area is optimized, and the cell width of each sub-cell in the edge area is appropriately increased to compensate for low quantum efficiency caused by poor quality of the edge film layer, so that the current intensity of each sub-cell in the edge area is consistent with the current intensity in the middle area. The specific optimization method is not limited in this step, as long as the purpose of making the current intensity of each sub-cell in the edge region coincide with the current intensity in the middle region can be achieved.
In some embodiments, an average value of the quantum efficiency test values of the sub-cells in the middle region and the quantum efficiency test value of each sub-cell in the edge region are obtained in step S2. In step S2, the optimized value of the cell width of each sub-cell in the edge area is determined by using the average quantum efficiency test value of each sub-cell in the middle area and the quantum efficiency test value of each sub-cell in the edge area.
In some embodiments, as shown in fig. 4, step S2 includes:
s21, determining a geometric center of the thin-film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub cells at two sides of the geometric center as the middle area, and testing quantum efficiency and average value of each sub cell in the middle area;
only the quantum efficiencies of several subcells on both sides of the geometric center need be measured and the average value thereof calculated in step S21.
S22, determining that a preset length range from two side edges of the thin film solar cell sample is an edge area of the thin film solar cell sample in the cell width-saving direction of the thin film solar cell sample, and measuring quantum efficiency of each sub-cell of the edge area.
The preset length is, for example, 40mm to 90mm. For example, the thin film solar cell sample width is 635mm, then the edge region may be in the range of 60mm from the edge. For example, in some other embodiments, the edge region may be in the range of 70mm from the edge, or in the range of 90mm from the edge.
The edge regions can be determined empirically by those skilled in the art. The edge area is generally determined by one skilled in the art based on the width of the thin film solar cell sample and the uniformity of the coating. In step S22, it is necessary to measure the quantum efficiency of each subcell in the edge region.
In step S3, the cell width after optimization of each sub-cell in the edge area is calculated according to the average value of the quantum efficiency of the plurality of sub-cells in the middle area calculated in step S21 and the quantum efficiency of each sub-cell in the edge area measured in step S22. The number of the plurality of sub-cells in the middle area selected in step S21 may be selected according to practical situations, for example, 2 to 5 sub-cells may be selected on both sides of the geometric center to perform quantum efficiency test, i.e. 4 to 10 sets of data are measured in total.
Step S3 may sequentially calculate the cell width after optimizing each sub-cell in the edge area of the thin film solar cell sample according to the following formula:
D n ＝D+D*(Q-Q n )/Q，
wherein Q is n Quantum efficiency, D, measured for one subcell of the edge region of the thin film solar cell sample n The cell width optimized for the subcell is D the first cell width and Q the average of the quantum efficiencies measured for each subcell in the middle region of the thin film solar cell sample.
In other embodiments, as shown in fig. 5, step S2 includes:
s201, in the cell width-saving direction, carrying out quantum efficiency test on each sub cell of the thin film solar cell sample;
s202, determining a geometric center of the thin-film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub cells at two sides of the geometric center as the middle area, and calculating an average value of quantum efficiency of each sub cell in the middle area;
and S203, determining the subcells with quantum efficiency lower than the preset percentage of the average value of the quantum efficiency of each subcell in the middle region as the subcell in the edge region of the thin film solar cell sample. The preset percentage is for example 3%.
The closer the thin film solar cell sample is to the edge, the poorer the film quality, and the lower the quantum efficiency of the measured subcell. In step S02, a region of the edge below a preset percentage of the average value of the quantum efficiency of each sub-cell of the intermediate region calculated in step S202 may be determined as an edge region according to the measured quantum efficiency of each sub-cell of step S201. The areas except the edge areas are all middle areas, but the quantum efficiency of each sub-cell in the middle area does not need to be measured completely, and only a plurality of sub-cells on two sides of the geometric center of the sample are generally measured.
Similarly, step S3 may sequentially calculate the cell width after optimizing each sub-cell in the edge area of the thin film solar cell sample according to the following formula:
D n ＝D+D*(Q-Q n )/Q，
in some embodiments, the thin film solar cell may be, for example, a thin film solar cell that involves formation using P1/P2/P3 scribe. The thin film solar cell sample in the step S1 is also formed by the same scribing of P1/P2/P3, that is, the thin film solar cell sample is scribed according to the first cell width in the step S1, so as to form a thin film solar cell sample including a plurality of sub-cells.
In some embodiments, scribe margin regions are reserved on both sides of the thin film solar cell sample; the edge region of the thin film solar cell sample is from the inner edge of the scribe margin region. The cell width of the sub-cell in the optimized edge region will generally be greater than the first cell width, which corresponds to the optimized cell region expanding to both sides, occupying a portion of the scribe margin region.
The following further describes the aspects of the present disclosure using an amorphous silicon thin film battery as an example.
Example 1
The existing thin film battery is cut and then subjected to a Quantum Efficiency (QE) test, sub-batteries at two side edges of a substrate (for example, 1-3 sub-batteries are respectively selected at two sides, the specific section number can be determined according to the quality of a film layer) and any sub-battery or a plurality of sub-batteries in a middle area are selected for QE data comparison analysis, then the section width of the edge sub-battery is correspondingly adjusted according to the QE difference value, for example, the QE of the edge sub-battery is 13% lower than that of the sub-battery in the middle area, and the section width of the edge sub-battery is correspondingly increased by 13% than that of the sub-battery in the middle area. The specific implementation method is as follows:
1. forming a thin film battery sample according to the existing uniform battery width design scheme;
2. QE testing was performed on sub-cells in the edge and middle regions of the thin film battery sample as shown in fig. 6;
3. designing the cell width of the sub-cell in the edge area according to the measured QE value;
4. correspondingly adjusting the scribing parameters of P1, P2, P3 and P4.
For example, a thin film solar cell sample formed according to the existing uniform cell width design includes 39 subcells, each of which has a cell width of 15.5mm. And selecting the most marginal sub-cell as the sub-cell of the marginal area to optimize the cell width. The QE of the edge region subcell is 13% lower than that of the middle region subcell, and the width of the edge region subcell is correspondingly increased by 13% than that of the middle region subcell. The optimized battery section width is
d＝15.5*(1+13％)＝17.5mm。
As shown in fig. 7, the cell widths of the sub-cells (sub-cells with the serial numbers of 2 to 38) in the middle region of the optimized thin film solar cell are all 15.5mm; the cell widths of the sub-cells at both side edges (sub-cells numbered 1 and 39) were 17.5mm.
Example two
For example, a thin film solar cell sample formed according to the prior art uniform cell width design includes 39 subcells, each of which has a cell width of 15.5mm. The following is an optimization design based on the comparative pitch width design.
The Quantum Efficiency (QE) test is carried out after the existing thin film batteries with equal section width are cut. The testing method comprises the following steps:
the QE data can be tested on all the sub-cells one by one, and the sub-cells and the middle area contained in the width of 60mm (the closer to the edge, the worse the quality of the film layer) of the edge areas on the two sides of the film battery substrate can be selected to perform QE test. And comparing and analyzing the QE value of the sub-battery in the edge area with the average QE value of the sub-battery in the middle area, and then re-designing the width of the current equal-width thin film battery according to the difference of the QE values.
The specific design process is as follows: if the QE values of the sub-cells at the two side edges are respectively recorded as Q n (n is the number of sub-cells included in the 60mm region at the two side edges), and the average QE value of the sub-cells in the middle region is Q, the difference Q between the QE value of the sub-cells in each edge region and the average QE value of the sub-cells in the middle region n ＝(Q-Q n )/Q*100％
For ease of calculation, if (Q-Q n ) Q is calculated to be 0-3% by 100%, and Q is calculated later n Taking a value of 0%; if the calculated result is 3.1% -5%, q is calculated later n Take the value 5%; if the calculated result is 5.1% -10%, q is calculated later n Taking a value of 10%; if the calculated result is 10.1% -15%, q is calculated later n Taking 15% of the value; if the calculated result is 15.1% -20%, q is as follows n Taking 20% of the value; and so on. Of course, q n The value can also be taken according to the actual calculation result.
For the same material, the current density J is proportional to QE, and the current intensity i=j×s (S is the effective area of the subcell), and to match the current intensity I of each subcell, the combination of the QE value and the effective area of the subcell needs to be considered. In the case that the sub-batteries have the same length, only the battery cell width of the sub-battery needs to be considered.
For the silicon germanium thin film solar cell, the sub-cell section width is 15.50mm, and the insulation width is 8-15 mm in the 60mm areas at the edges of the two sides, and the silicon germanium thin film solar cell further comprises: (60-15)/15.5.apprxeq.3 sub-cells. Assuming that the outermost edges of two sides are in the direction from the center, the tested QE values are Q in turn 1 ＝17.28，Q 2 ＝18.15，Q 3 ＝18.62，Q 4 ＝18.53，Q 5 ＝18.20，Q 6 =17.31, where Q 1 、Q 6 The two-sided outermost edge subcell QE values, respectively. The average value q=19.11 of the quantum efficiency of each subcell in the middle region.
[(Q-Q n )/Q]* The values calculated by 100% are in turn: 9.6%,5.0%,2.7%,3.0%,4.8% and 9.4% are convenient for calculation, and the following are sequentially: q 1 ＝10％，q 2 ＝5％，q 3 ＝0％，q 4 ＝0％，q 5 ＝5％，q 6 =10%. Of course, in other embodiments, q may be directly pressed n ＝[(Q-Q n )/Q]*100% value.
To match the current intensities of all the subcells, the widths of the subcells in the two side edge regions need to be optimized:
Q 1 the sub-cell width after optimization = current sub-cell width (1+q 1 ) =15.50 x (1+10%) =17.05 mm; in a similar manner to that described above,
Q 2 the corresponding sub-cell width after optimization = 16.28mm,
Q 3 the corresponding sub-cell width after optimization = 15.50mm,
Q 4 the corresponding sub-cell width after optimization = 15.50mm,
Q 5 the corresponding sub-cell width after optimization = 16.28mm,
Q 6 the corresponding sub-cell width after optimization=17.05mm.
The width of the battery is redesigned according to the optimization result, as shown in fig. 8. The cell widths of the sub-cells (sub-cells with the serial numbers of 4-36) in the middle area of the optimized thin film solar cell are 15.5mm; the cell widths of the sub-cells at the two side edges (sub-cells with the numbers 1 to 3 and 37 to 39) are respectively:
D 1 ＝17.05mm，D 2 ＝16.28mm，D 3 ＝15.5mm；
D 39 ＝17.05mm，D 38 ＝16.28mm，D 37 ＝15.5mm。
the implementation process is as follows:
1. forming a battery sample according to the current battery width design;
2. QE test is carried out on the sub-cells at the two side edges and the middle area of the substrate;
3. calculating the width of each sub-battery according to the relation between the QE test value and the current intensity;
4. depositing a first conductive film, setting the scribing pitch (pitch width) of a P1 scribing machine to be consistent with the estimated result, and scribing;
5. depositing a photon absorbing layer on a substrate;
6. performing P2 scribing by taking the P1 scribing as a reference;
7. depositing a second conductive film on the photon absorption layer;
8. performing P3 scribing by taking the P2 scribing as a reference;
9. etching the film layer around the substrate (with the width of 8-15 mm) to form an insulating region;
10. and pressing the substrate into a component through a subsequent packaging layer.
Example III
After optimization, the edge area is enlarged due to the enlarged cell section width, and the space occupied by the sub-cells with the same section number is enlarged. In practice, the scored margin area 100 at the cell edge as shown in fig. 10 may be designed to be smaller to compensate for the expanded footprint of the edge area. Or the width of the battery plate can be designed to be larger directly.
In other embodiments, the cell widths of all sub-cells may be optimized to overall occupy space with the total active area of the cells unchanged.
In some embodiments, the optimized battery cell width is calculated as follows:
cell width D of optimized middle area subcell In (a) ＝ND Original source /(P+N), where N is the total number of sub-cells, D Original source To optimize the width of the previous sub-cell; p is the deviation q of QE value of each sub-battery n Is a sum of (a) and (b).
Optimizing cell width dn=d of each sub-cell in the trailing edge region In (a) *(q n +1)。
Taking a silicon germanium film battery as an example, if the whole battery has 39 sub-batteries, the sub-batteries divided according to the prior art film solar battery sample have the width of 15.50mm, and the area of 60mm at the two side edges is deducted with the insulation width of 8-15 mm, and the method further comprises the following steps: (60-15)/15.5.apprxeq.3 sub-cells.
How to further optimize the design of the battery cell width based on this battery cell width design is described below. Assume a tested QE value Q 1 ＝17.28，Q 2 ＝18.15，Q 3 ＝18.62，Q 4 ＝18.53，Q 5 ＝18.20，Q 6 ＝17.31(Q 1 、Q 6 Respectively the two-sided outermost edge subcell QE values). The QE values of the sub-cells in the middle region generally do not differ much. Q (Q) In (a) ＝19.11。
According to q n ＝(Q In (a) -Q n )/Q In (a) *100% calculation of the degree of deviation q of the QE value of each sub-cell n 。
(Q In (a) -Q n )/Q In (a) * The 100% calculation results were 10%,5.0%,2.7%,3.0%,4.8% and 9.4% in this order. For the convenience of calculation, the present embodiment still takes the value of q as the second embodiment 1 Take the value of 10%, q 2 Take the value 5%, q 3 Take the value of 0%, q 4 Take the value of 0%, q 5 Take the value 5%, q 6 The value is 10%.
In order to match the current intensities of all the sub-cells, the cell widths of the sub-cells need to be optimized, and the cell widths of the sub-cells are calculated according to the optimization method:
the width of the optimized middle area sub-battery is as follows:
D in (a) ＝ND Original source /(P+N)
＝ND Original source /(q 1 +q 2 +q 3 +q 4 +q 5 +q 6 +N)＝39*15.5/(10％+5％+0+0+5％+10％+39)
＝15.38mm；
Sub-battery width=d corresponding to Q1 In (a) *(q 1 +1)＝15.38*(1+10％)＝16.92mm，
Q2 corresponds to a sub-cell width=16.15 mm,
q3 corresponds to a sub-battery width=15.38mm,
q4 corresponds to a sub-battery width=15.38 mm,
q5 corresponds to a sub-battery width=16.15 mm,
sub-battery width corresponding to Q6=16.92 mm.
The width of the battery is redesigned according to the optimization result, as shown in fig. 9. The cell widths of the sub-cells (sub-cells with the serial numbers of 4-36) in the middle area of the thin film solar cell are all 15.38mm; the cell widths of the sub-cells at the two side edges (sub-cells with the numbers 1 to 3 and 37 to 39) are respectively:
D 1 ＝16.92mm，D 2 ＝16.15mm，D 3 ＝15.38mm；
D 39 ＝16.92mm，D 38 ＝16.15mm，D 37 ＝15.38mm。
in the present embodiment, press D In (a) ＝ND Original source And the battery section width of the sub-battery in the middle area is optimized, the battery section width of the middle area is reduced after optimization, the section width of the edge area is increased, and the occupied space of each sub-battery on the whole substrate is unchanged or is not changed greatly. Further, if the total footprint of each sub-cell is still insufficient in accordance with the method of the present embodiment, a portion of the scribe margin area 100 may be occupied.
As shown in fig. 11, an embodiment of the present disclosure further provides a width-saving design apparatus 20 of a thin film solar cell, including:
a quantum efficiency testing device 21, configured to perform a quantum efficiency test on sub-cells of the thin film solar cell sample to obtain quantum efficiency test information of sub-cells of an edge area E and a middle area M in the cell width direction of the thin film solar cell sample, where each sub-cell of the thin film solar cell sample has a first cell width;
the calculating device 22 optimizes the cell width of each sub-cell of the edge region E of the thin film solar cell sample according to the quantum efficiency test information of the edge region E and the middle region M so that the current intensity of each sub-cell of the edge region E is consistent with the current intensity of each sub-cell of the middle region M.
The computing device 22 is, for example, a computer. The computing device 22 may feed back the optimized battery pack to the scoring device 30. The scribing device 30 scribes the optimized cell width.
As shown in fig. 10, embodiments of the present disclosure also provide a thin film solar cell including a plurality of subcells, the thin film solar cell including a middle region M and an edge region E; wherein each sub-cell of the middle region M has a first cell width; each sub-cell of the edge region E has a second cell width, which is greater than the first cell width.
In some embodiments, the cell width of each sub-cell of the edge region E varies with the distribution position of each sub-cell. If the distribution position of the sub-cells in the edge area E is closer to two sides, the cell width of the sub-cells is larger, that is, the cell width of the sub-cells is proportional to the quality of the film layer. The worse the film quality, the greater the cell width of the subcell.
In some embodiments, each sub-cell of the edge area E has a battery cell width optimized based on the first battery cell width, and the battery cell width optimized based on the first battery cell width enables the current intensity of the sub-cell of the edge area E to be consistent with the current intensity of the sub-cell of the middle area M. The optimization process is described above and will not be described in detail here.
In some embodiments, the battery power optimized based on the first battery power is:
D n ＝D+D*(Q-Q n )/Q，
providing a thin film solar cell sample with the same number of sub-cells as the thin film solar cell, wherein the cell widths of the sub-cells of the thin film solar cell sample are the first cell widths, and D n Cell width, Q of one sub-cell of the edge region E of the thin-film solar cell n And D is the first cell width, and Q is the average value of the quantum efficiency measured by each sub cell in the middle area of the thin film solar cell sample. The middle area of the thin film solar cell sample is the corresponding area of a plurality of sub-cells at two sides of the geometric center of the thin film solar cell sample.
The edge region E is a preset length range extending from the edge to the center of the thin film solar cell in the cell width direction. The edge region E may be divided according to the quantum efficiency of each portion of the thin film solar cell (the quantum efficiency of each portion should be measured in the case where each portion has the same area). For example, a sub-cell corresponding region having a quantum efficiency lower than a preset percentage of an average value of quantum efficiencies of the sub-cells of the intermediate region is determined as an edge region of the thin film solar cell sample. The preset percentage may be determined according to the overall variation range of the quantum efficiency of each sub-cell. For example, if the minimum value of the quantum efficiency of each sub-cell is 10% of the maximum value, then more than 3% of the sub-cells are determined as sub-cells of the edge region, which requires optimization of the cell width.
It will be appreciated by those skilled in the art that although the region generally at the edge of the cell is to be optimized, the present solution may also be optimized for any region of poor film quality and low quantum efficiency. In the latter approach to the edge regions above, the edge regions of the present disclosure may not be limited to the regions of the two side edges of the battery sheet described herein, and may refer broadly to any regions of poor film quality and low quantum efficiency.
The present proposal optimizes only the cell width of the sub-cell in the edge region E, and the cell width of the sub-cell in the middle region can be maintained at the original value.
In some embodiments, the thin film solar cell includes: amorphous silicon thin film cells, microcrystalline silicon thin film cells, copper indium gallium selenide thin film cells, and thin film telluride cells.
According to the scheme, the cell width of the sub-cells at the two sides of the edge of the thin film solar cell is optimized, the current limiting effect can be eliminated, and the conversion efficiency of the whole cell is improved. The scheme of the present disclosure can achieve the same effect as high-cost coating equipment through a low-cost (or zero-cost) and wide-width design. The high-cost coating equipment refers to high-cost coating equipment capable of improving coating uniformity.
According to the thin film solar cell, the cell width of the sub-cells at the two sides of the edge is optimized, the current limiting effect can be eliminated, and the conversion efficiency of the whole cell is improved.
Although the embodiments of the present invention are described above, the embodiments are only used for facilitating understanding of the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is to be determined by the appended claims.
Claims (7)
1. The width-saving design method of the thin film solar cell is characterized by comprising the following steps of:
s1, forming a thin film solar cell sample comprising a plurality of sub-cells according to the width of a first cell;
s2, carrying out quantum efficiency test on the subcells of the thin-film solar cell sample, and obtaining quantum efficiency test information of the subcells of the edge area and the middle area of the thin-film solar cell sample in the cell width direction;
s3, optimizing the cell widths of all the sub-cells in the edge area of the thin film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area so that the current intensity of all the sub-cells in the edge area is consistent with the current intensity of the sub-cells in the middle area;
the step S2 comprises the following steps: determining a geometric center of the thin film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub cells at two sides of the geometric center as the middle area, and testing quantum efficiency and average value of each sub cell in the middle area; determining a preset length range from two side edges of the thin film solar cell sample as an edge area of the thin film solar cell sample in the cell width direction of the thin film solar cell sample, and measuring quantum efficiency of each sub-cell of the edge area;
the step S2 comprises the following steps: carrying out quantum efficiency test on each sub-cell of the thin film solar cell sample in the cell width direction; determining a geometric center of the thin film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub cells at two sides of the geometric center as the middle area, and calculating an average value of quantum efficiency of each sub cell in the middle area; determining sub-cells with quantum efficiency lower than a preset percentage of the average value of the quantum efficiency of each sub-cell in the middle area as sub-cells in the edge area of the thin film solar cell sample;
step S3, calculating the cell width of each sub-cell of the edge area of the thin film solar cell sample after optimization according to the following formula: dn=d+d (Q-Qn)/Q, where Qn is the quantum efficiency measured by one subcell in the edge region of the thin film solar cell sample, dn is the cell width after optimization of the subcell, D is the first cell width, and Q is the average value of the quantum efficiencies measured by each subcell in the middle region of the thin film solar cell sample.
2. The pitch-width design method according to claim 1, wherein the preset percentage is 3%.
3. The pitch-width designing method according to claim 1, wherein the preset length is 40mm to 90mm.
4. The method according to claim 1, wherein in step S1, the thin film solar cell sample is scribed according to the first cell pitch to form a thin film solar cell sample including a plurality of sub-cells.
5. The method according to claim 1, wherein in step S1, scribe margin regions are reserved on both sides of the thin film solar cell sample; the edge region of the thin film solar cell sample is from the inner edge of the scribe margin region.
6. A thin film solar cell width-saving design apparatus employing the method of claim 1, comprising: the quantum efficiency testing device is used for carrying out quantum efficiency testing on the sub-cells of the thin film solar cell sample so as to obtain quantum efficiency testing information of the sub-cells of the edge area and the middle area of the thin film solar cell sample in the cell width direction, wherein each sub-cell of the thin film solar cell sample is provided with a first cell width; and the calculating device optimizes the cell width of each sub-cell of the edge region of the thin film solar cell sample according to the quantum efficiency test information of the edge region and the middle region so that the current intensity of each sub-cell of the edge region is consistent with the current intensity of each sub-cell of the middle region.
7. A thin film solar cell comprising the width-saving design apparatus of claim 6, further comprising a plurality of sub-cells, wherein the thin film solar cell comprises a middle region and an edge region; wherein each sub-cell of the intermediate region has a first cell width; each sub-cell of the edge region has an optimized cell width based on the first cell width, and the optimized cell width enables the current intensity of the sub-cell of the edge region to be consistent with the current intensity of the sub-cell of the middle region.
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