CN112033530B - Gain control circuit of photoelectric detector - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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Abstract
The invention discloses a gain control circuit of a photoelectric detector, which comprises a first controller, a second controller and a third controller; a first end of a first switch in the first controller is used for receiving a first bias voltage; a first end of a second switch in the second controller is used for receiving a second bias voltage; the first end of a third switch in the third controller is grounded through a power resistor; the second ends of the three switches are connected with the photoelectric detector; controlling the first switch to be closed, the second switch and the third switch to be opened, and supplying a first bias voltage to the photoelectric detector; the first switch is controlled to be switched off, the third switch is controlled to be switched on, and the first bias voltage applied to the photoelectric detector is discharged through the power resistor; controlling the first switch and the third switch to be switched off and the second switch to be switched on, and supplying a second bias voltage to the photoelectric detector; the invention makes the gain control complete the state switching in a pulse period, makes the photoelectric detector avoid the influence of strong background light, and ensures the normal switching of the gain control state of the target detection system.
Description
Technical Field
The invention belongs to the technical field of target detection and control, and particularly relates to a gain control circuit which is suitable for being used as a gain control processing circuit of photoelectric detectors such as PIN photodiodes, avalanche Photodiodes (APDs) and the like in a laser target detection system.
Background
In laser target detection systems, a four-quadrant photodetector is typically used to detect the target orientation. When a target shifts, the photocurrent output by each quadrant changes due to the change of radiation flux between the quadrants, the pulse signal output by the four-quadrant detector also changes correspondingly, and the target angle calculation value can be obtained after the pulse signal is subjected to a series of processing. Therefore, it is important to control the gain of the photodetector so that it outputs an appropriate pulse signal.
The gain control for the photoelectric detector mainly comprises a front amplification gain control and a bias gain control, wherein the front amplification gain control is used for controlling the amplification factor of I/V conversion, and the bias gain control is used for controlling the responsivity of the detector to incident light by controlling the magnitude of bias. Four photodiodes (PIN/APD) are arranged in the four-quadrant photodetector, and when a reverse bias voltage is applied, two electric field regions are formed in the photodiodes: a high electric field region and a drift region. When the applied reverse bias voltage is low, the incident light can only generate a small photocurrent, and the photoelectric detector belongs to a working mechanism of a PIN type photoelectric detector. However, as the reverse bias voltage increases, the width of the depletion layer gradually increases, and when the reverse bias voltage increases to a certain value, the depletion layer passes through the P region and enters the pi region to form a high electric field region and a drift region, which belong to the operating mechanism of the APD type photodetector, where pi is a material close to an intrinsic type.
In the high electric field region, the hole-electron pairs generated by incident light move at high speed under the action of the high electric field. Due to its high speed and large kinetic energy, a phenomenon of "impact ionization" occurs during the movement, by which new, several or several tens of secondary hole-electron pairs can be generated. Similarly, the secondary hole-electron pairs can generate three and four times of hole-electron pairs in a high electric field region through a collision ionization effect. Therefore, a first hole-electron pair generated by incident light may generate dozens or hundreds of new hole-electron pairs, namely, the "multiplication" effect of the APD photodetector, so that under the action of light with the same size, a photocurrent which is dozens or hundreds of times larger than that of the PIN photodiode can be generated, which is equivalent to playing a role in optical amplification.
In the design process, firstly, a high-voltage power supply module provides reverse bias voltage for the photoelectric detector, so that the photoelectric detector has certain responsivity to incident light; then, the switch control circuit is used for switching off or reducing the output of the high-voltage module, so that the responsivity of the photoelectric detector to incident light can be reduced, and the photocurrent output of the detector is reduced at the moment. However, when the reverse bias is very low, the photodiode generates a reverse direct current in a strong light background, and due to the existence of the resistance of the bias output terminal to the ground, the bias of the photodetector changes from negative to positive, so that when the bias gain is switched, the amplification factor is dozens of times of that of the low bias, and the system cannot capture the pulse signal, thereby losing the target.
Disclosure of Invention
In view of at least one of the defects or the improvement requirements of the prior art, the present invention provides a gain control circuit of a photo detector, which aims to solve the problem that a pulse signal cannot be captured when a bias gain of the photo detector is switched, and thus a target is lost.
To achieve the above object, according to an aspect of the present invention, there is provided a gain control circuit of a photodetector, including:
the first controller is provided with a first switch, and a first end of the first switch is used for receiving a first bias voltage;
a second controller having a second switch, a first terminal of the second switch being configured to receive a second bias voltage; the first bias voltage is greater than the second bias voltage;
the third controller is provided with a third switch, and the first end of the third switch is grounded through a power resistor;
when the photoelectric detector works, the second ends of the first switch, the second switch and the third switch are respectively connected with a bias pin of the photoelectric detector;
controlling the first switch to be closed, the second switch and the third switch to be opened, and providing the first bias voltage to a bias pin of the photoelectric detector;
when the energy received by the photoelectric detector is higher than a first threshold value, the first switch is controlled to be opened and the third switch is controlled to be closed, and a first bias voltage applied to a bias pin of the photoelectric detector is discharged through the third switch and the power resistor;
and controlling the first switch, the third switch to be switched off and the second switch to be switched on, wherein the second bias voltage is provided for a bias voltage pin of the photoelectric detector, so that bias voltage gain switching of the photoelectric detector is realized.
Preferably, the gain control circuit further includes:
the fourth controller is provided with a fourth switch, the first end of the fourth switch is used for receiving the front-end amplification gain voltage, and the second end of the fourth switch is connected with the photoelectric detector;
and when the energy received by the photoelectric detector is higher than the second threshold value, the fourth switch is controlled to be switched on, and the front amplification gain voltage is supplied to the photoelectric detector so as to perform front amplification gain control on the photoelectric detector.
Preferably, in the gain control circuit, the first controller, the second controller, the third controller, and the fourth controller control the switch corresponding to each of the first controller, the second controller, the third controller, and the fourth controller to be turned on or off according to a received external signal.
Preferably, in the gain control circuit, when the external signal is at a high level, the respective corresponding switches are controlled to be closed; and when the external signal is at a low level, the corresponding switches are controlled to be switched off.
Preferably, in the gain control circuit, a diode is disposed between the second end of the second switch and the bias pin of the photodetector, and when the second bias voltage is smaller than the real-time voltage on the bias pin of the photodetector, the diode is turned on to provide the second bias voltage to the bias pin of the photodetector.
Preferably, in the gain control circuit, one or more energy storage capacitors are disposed between the second end of the third switch and the bias pin of the photodetector, and the discharge time of the voltage at the bias pin is controlled by adjusting the capacitance of the energy storage capacitor.
Preferably, in the gain control circuit, a first end of the fourth switch is connected to one end of a first voltage-dividing resistor, and the other end of the first voltage-dividing resistor is configured to receive a forward gain voltage; the second end of the first divider resistor is connected with one end of a first divider resistor, and the other end of the first divider resistor is grounded;
the pre-amplifier gain voltage is subjected to voltage division processing through a first voltage division resistor and a second voltage division resistor to obtain pre-amplifier gain control voltage provided for the photoelectric detector, and the magnitude of the pre-amplifier gain control voltage is controlled by adjusting the resistance values of the first voltage division resistor and the second voltage division resistor.
Preferably, in the gain control circuit, the second end of the fourth switch is connected to one or more energy storage capacitors, and the energy storage capacitors are used for filtering the pre-amplifier gain control voltage after voltage division processing.
Preferably, in the gain control circuit, the first controller, the second controller, the third controller, and the fourth controller may be implemented by an optical MOS relay or a photocoupler.
Preferably, in the gain control circuit, anodes of the light emitting diodes in the first controller, the second controller, the third controller, and the fourth controller are used as input terminals for receiving external signals, and cathodes of the light emitting diodes are grounded.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
according to the invention, the automatic gain control of the photoelectric detector is realized by adopting discrete components, the gain control circuit is added in the using circuit of the photoelectric detector, the gain control is switched in a pulse period through the circuit design, the photoelectric detector can be prevented from being influenced by strong background light, and the normal switching of the gain control state of the laser target detection system is ensured, so that the precision is improved, and the photoelectric detector plays a vital role in the correct application aspect; the circuit is simple in structure, flexible to control, low in cost and high in practicability.
Drawings
Fig. 1 is a schematic structural diagram of a gain control circuit of a photodetector provided by the present invention;
fig. 2 is a schematic circuit diagram of a gain control circuit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the respective embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a schematic structural diagram of a gain control circuit of a photodetector provided by the present invention, and referring to fig. 1, the gain control circuit includes a first controller, a second controller and a third controller;
the first controller is provided with a first switch, and a first end of the first switch is used for receiving a first bias voltage;
the second controller is provided with a second switch, and a first end of the second switch is used for receiving a second bias voltage; and the first bias voltage is greater than the second bias voltage;
the third controller is provided with a third switch, and the first end of the third switch is grounded through a power resistor;
second ends of the first switch, the second switch and the third switch are respectively used for connecting a bias pin of the photoelectric detector;
when the photoelectric detector works, the first switch is controlled to be closed, the second switch and the third switch are controlled to be opened, and then the first bias voltage is provided for a bias pin of the photoelectric detector;
when the energy received by the photoelectric detector is higher than a first threshold value, the first switch is controlled to be opened and the third switch is controlled to be closed, and a first bias voltage applied to a bias pin of the photoelectric detector is discharged to the ground through the third switch and the power resistor;
then, the first switch, the third switch are controlled to be opened, and the second switch is controlled to be closed, so that the second bias voltage is provided for the bias pin of the photoelectric detector, and the bias gain switching of the photoelectric detector is realized.
Furthermore, the gain control circuit further comprises a fourth controller, wherein the fourth controller is provided with a fourth switch, a first end of the fourth switch is used for receiving the forward gain voltage, and a second end of the fourth switch is used for connecting the photodetector; when the energy received by the photoelectric detector is higher than the second threshold value, the fourth switch is controlled to be switched on, and then the forward amplifying gain voltage is provided for the photoelectric detector so as to carry out forward amplifying gain control on the photoelectric detector.
Specifically, the first controller, the second controller, the third controller and the fourth controller control the on or off of the corresponding switches according to the received external signals; more specifically, when the external signal is at a high level, the corresponding switches are controlled to be closed; and when the external signal is at a low level, the corresponding switches are controlled to be switched off.
In the scheme, the first controller, the second controller, the third controller and the fourth controller can be realized by adopting an optical MOS relay or a photoelectric coupler; preferably, the method is realized by adopting a high-voltage-resistant optical MOS relay; taking the photo-MOS relay as an example, a single-path photo-MOS relay or a multi-path photo-MOS relay can be adopted; if single-path photo MOS relays are adopted, each single-path photo MOS relay correspondingly realizes a controller; if a common double-path optical MOS relay is adopted, a gain control circuit in the scheme can be formed by two double-path optical MOS relays, specifically, a first controller and a second controller are integrated in one double-path optical MOS relay, and a third controller and a fourth controller are integrated in the other double-path optical MOS relay; two branches in the double-path light MOS relay respectively correspond to the two controllers.
The structure and the operation principle of the gain control circuit provided by the present invention are explained by the following specific embodiments.
Fig. 2 is a schematic circuit structure diagram of the gain control circuit provided in this embodiment, and as shown in fig. 2, the gain control circuit includes a first photo MOS relay D1 and a second photo MOS relay D2; in the first photo MOS relay D1, the photoelectric conversion path in which the switch S11 is located constitutes a first controller, and the photoelectric conversion path in which the switch S12 is located constitutes a second controller. In the second photo MOS relay D2, the photoelectric conversion path in which the switch S21 is located constitutes a third controller, and the photoelectric conversion path in which the switch S22 is located constitutes a fourth controller.
The first end of the switch S11 is used for receiving a high bias voltage VHV, and the specific value of the high bias voltage VHV is set according to actual requirements; a first terminal of the switch S12 is configured to receive a low bias voltage VLV, and a specific value of the low bias voltage VLV is set according to an actual requirement; the first end of the switch S21 is grounded through a power resistor R4; second ends of the switch S11, the switch S12 and the switch S21 are respectively connected to a bias pin of the photodetector.
The anode of the light emitting diode corresponding to the switch S11 is used as the control end VC1, the anode of the light emitting diode corresponding to the switch S12 is used as the control end VC2, the anode of the light emitting diode corresponding to the switch S21 is used as the control end VC3, and the anode of the light emitting diode corresponding to the switch S21 is used as the control end VC4; the cathodes of the light emitting diodes are respectively grounded.
VC1, VC2, VC3, and VC4 are control terminals of the photo MOS relay, and are configured to receive an externally input control signal, for example: the functions of the microprocessor are to control the on and off of high bias voltage, the on and off of low bias voltage, the discharge loop of bias voltage and the control of forward gain.
The main working flow of the gain control circuit provided by the embodiment is as follows: the system is powered on, VC1 is high level, VC2 and VC3 are both low level, a switch S11 of D1 is closed, a high bias voltage VHV is transmitted to a bias pin of the photoelectric detector, and the responsivity of the photoelectric detector to incident light is maximum at the moment; when the energy received by the photoelectric detector is higher than the first threshold, the size of the first threshold can be set according to the application scene of the photoelectric detector, and no specific limitation is imposed; firstly, VC1 is changed from high level to low level so as to control the disconnection of a high bias voltage VHV and a detector, secondly, VC3 is changed from low level to high level and controls a power resistor R4 to be connected to a bias voltage pin of a photoelectric detector so as to form a bias voltage discharge loop, the high bias voltage VHV applied to the bias voltage pin of the photoelectric detector is discharged to the ground through a switch S21 and the power resistor R4, and the high bias voltage VHV disconnected by the photoelectric detector is reduced to 0V in one laser pulse period. Finally, VC2 is changed from low level to high level, so that low bias voltage VLV is controlled to be connected to a bias pin of the photoelectric detector, and at the moment, the responsivity of the photoelectric detector to incident light is low, so that the bias gain of the photoelectric detector is rapidly switched.
The control of the front amplification gain is executed by VC4, a first end of a switch S22 is used for receiving a front amplification gain voltage VPV, and a second end is connected with a pin for controlling the front amplification gain in the photoelectric detector; when the system is powered on, VC4 is a low level, and when the energy received by the photoelectric detector reaches a second threshold value for controlling the turn-on of the forward gain, the size of the second threshold value can be set automatically according to the application scene of the photoelectric detector without specific limitation; VC4 is changed from low level to high level, the switch S22 of D2 is closed, the forward gain voltage VPV is sent to the photoelectric detector through the switch S22, and forward gain control of the photoelectric detector is realized.
Further, referring to fig. 2, a diode D25 is disposed between the second terminal of the switch S12 and the bias pin of the photo detector, and the diode D25 is turned on if and only if the low bias voltage VLV, which is provided to the bias pin of the photo detector, is less than the real-time voltage VHVA on the bias pin of the photo detector.
Two energy storage capacitors C1 and C2 connected in parallel are arranged between the second end of the switch S21 and the bias pin of the photoelectric detector, and when the bias gain is switched, the discharge time of the voltage on the bias pin of the photoelectric detector can be controlled by adjusting the capacitance of the energy storage capacitors C1 and C2.
A first end of the switch S22 is connected to one end of the voltage dividing resistor R6, and the other end of the voltage dividing resistor R6 is configured to receive the front-end amplifier gain voltage VPV; the second end of the voltage divider is connected with one end of a voltage divider resistor R7, and the other end of the voltage divider resistor R7 is grounded;
the front-end amplifier gain voltage VPV is subjected to voltage division processing through a voltage division resistor R6 and a voltage division resistor R7 to obtain a front-end amplifier gain control voltage VPVA, and the front-end amplifier gain control voltage VPVA is supplied to a photoelectric detector; in the front-end gain control, when the front-end gain voltage VPV is fixed, the magnitude of the front-end gain control voltage VPVA can be controlled by adjusting the resistance values of the voltage dividing resistor R6 and the voltage dividing resistor R7.
In addition, the second end of the switch S22 is further connected to two energy storage capacitors C3 and C4 connected in parallel, the capacitors C3 and C4 are filter circuits of the preamplifier gain control voltage VPVA, and the preamplifier gain control voltage VPVA is filtered and then output to the photodetector.
According to the invention, the automatic gain control of the photoelectric detector is realized by adopting discrete components, the gain control circuit is added in the using circuit of the photoelectric detector, the gain control is switched in a pulse period through the circuit design, the photoelectric detector can be prevented from being influenced by strong background light, and the normal switching of the gain control state of the laser target detection system is ensured, so that the precision is improved, and the photoelectric detector plays a vital role in the correct application aspect; the circuit is simple in structure, flexible to control and high in practicability.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A gain control circuit for a photodetector, comprising:
the first controller is provided with a first switch, and a first end of the first switch is used for receiving a first bias voltage;
a second controller having a second switch, a first terminal of the second switch being configured to receive a second bias voltage; the first bias voltage is greater than the second bias voltage;
the third controller is provided with a third switch, and the first end of the third switch is grounded through a power resistor;
the fourth controller is provided with a fourth switch, the first end of the fourth switch is used for receiving the front-end amplification gain voltage, and the second end of the fourth switch is used as an external interface and is connected with the photoelectric detector;
when the photoelectric detector works, the second ends of the first switch, the second switch and the third switch are used as external interfaces and are respectively connected with the bias pin of the photoelectric detector;
controlling the first switch to be closed, the second switch and the third switch to be opened, and providing the first bias voltage to a bias pin of the photoelectric detector;
when the energy received by the photoelectric detector is higher than a first threshold value, the first switch is controlled to be opened and the third switch is controlled to be closed, and a first bias voltage applied to a bias pin of the photoelectric detector is discharged through the third switch and the power resistor;
controlling the first switch, the third switch to be switched off and the second switch to be switched on, wherein the second bias voltage is provided for a bias pin of the photoelectric detector, so that bias gain switching of the photoelectric detector is realized;
and when the energy received by the photoelectric detector is higher than the second threshold value, the fourth switch is controlled to be switched on, and the front-end amplification gain voltage is supplied to the photoelectric detector so as to perform front-end amplification gain control on the photoelectric detector.
2. The gain control circuit of claim 1, wherein the first controller, the second controller, the third controller, and the fourth controller control the respective switches to be turned on or off according to a received external signal.
3. The gain control circuit of claim 2, wherein when the external signal is at a high level, the respective switch is controlled to be closed; and when the external signal is at a low level, the corresponding switches are controlled to be switched off.
4. The gain control circuit of claim 1 or 3, wherein a diode is provided between the second terminal of the second switch and the bias pin of the photodetector, and the diode is turned on to provide the second bias voltage to the bias pin of the photodetector when the second bias voltage is less than the real-time voltage on the bias pin of the photodetector.
5. The gain control circuit of claim 1 or 3, wherein one or more energy storage capacitors are disposed between the second terminal of the third switch and the bias pin of the photodetector, and wherein the discharge time of the voltage on the bias pin is controlled by adjusting the capacitance of the energy storage capacitor.
6. The gain control circuit of claim 1, wherein a first terminal of the fourth switch is connected to one terminal of a first voltage-dividing resistor, and the other terminal of the first voltage-dividing resistor is configured to receive a forward gain voltage; the second end of the first divider resistor is connected with one end of a first divider resistor, and the other end of the first divider resistor is grounded;
the pre-amplifier gain voltage is subjected to voltage division processing through a first voltage division resistor and a second voltage division resistor to obtain pre-amplifier gain control voltage provided for the photoelectric detector, and the magnitude of the pre-amplifier gain control voltage is controlled by adjusting the resistance values of the first voltage division resistor and the second voltage division resistor.
7. The gain control circuit of claim 6, wherein the second terminal of the fourth switch is connected to one or more energy storage capacitors for filtering the divided pre-amplification gain control voltage.
8. The gain control circuit of claim 1, wherein the first controller, the second controller, the third controller, and the fourth controller are implemented by photo-MOS relays or photo-couplers.
9. The gain control circuit of claim 8, wherein the anodes of the light emitting diodes in the first controller, the second controller, the third controller and the fourth controller are used as input terminals for receiving external signals, and the cathodes of the light emitting diodes are grounded.
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