CN112015051A - Photoresist baking equipment and automatic cleaning method thereof - Google Patents
Photoresist baking equipment and automatic cleaning method thereof Download PDFInfo
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- CN112015051A CN112015051A CN202010702044.4A CN202010702044A CN112015051A CN 112015051 A CN112015051 A CN 112015051A CN 202010702044 A CN202010702044 A CN 202010702044A CN 112015051 A CN112015051 A CN 112015051A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 55
- 238000004140 cleaning Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 61
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 57
- 231100000719 pollutant Toxicity 0.000 claims abstract description 57
- 230000007246 mechanism Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000284 extract Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses photoresist baking equipment and an automatic cleaning method thereof, and relates to the technical field of semiconductor manufacturing, wherein the photoresist baking equipment comprises a chamber, an air supply mechanism and an exhaust mechanism, wherein the chamber is used for placing and heating a substrate base plate coated with photoresist; the air supply mechanism comprises an air pump and an air supply pipeline, the air supply pipeline is communicated with the air pump and the chamber, and the air pump is used for supplying air to the chamber; the exhaust mechanism comprises an exhaust pipeline communicated with the cavity and a jet vacuum pump arranged on the exhaust pipeline, and the jet vacuum pump is used for extracting and exhausting gas and pollutant particles; the photoresist baking equipment disclosed by the invention realizes stripping and cleaning of pollutant particles in the chamber through the gas supply mechanism, realizes discharge of the pollutant particles through the gas exhaust mechanism, improves the cleaning efficiency, avoids pollution of the chamber caused by the pollutant particles, and avoids spherical defects of the photoresist possibly caused after the pollutant particles drop on the substrate base plate.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to photoresist baking equipment and an automatic cleaning method thereof.
Background
This section merely provides background information related to the present invention and is not necessarily prior art.
In semiconductor manufacturing, a photolithography process generally includes the steps of preparing a substrate, pretreating the substrate, coating a photoresist, soft baking, exposing, developing, hard baking, etching, and the like, wherein the soft baking is to shape the photoresist by baking at a high temperature, so that a solvent component in the photoresist is volatilized, thereby reducing a film stress of the photoresist and enhancing an adhesion of the photoresist on the substrate.
In the soft process of drying by fire, the substrate base plate is heated in the cavity, the high temperature organic matter is volatilized after the photoetching glue or anti-reflection layer surface on substrate base plate surface is heated, the cavity can not be timely discharged completely to the high temperature organic matter, form the pollutant granule on the top and the lateral wall of cavity easily, the pollutant granule not only causes the pollution to the cavity, after the pollutant granule drips on the substrate base plate, can lead to the photoetching glue on the substrate base plate to appear spherical defect, influence semiconductor device's yield.
Therefore, pollutant particles need to be cleaned in time, and in the prior art, the pollutant particles are cleaned manually by partially dismantling the equipment when the equipment is maintained regularly, so that the cleaning efficiency is low.
Disclosure of Invention
A first aspect of the present invention provides a photoresist baking apparatus, comprising:
a chamber for placing and heating a substrate coated with a photoresist;
the air supply mechanism comprises an air pump and an air supply pipeline, the air supply pipeline is communicated with the air pump and the chamber, and the air pump is used for supplying air to the chamber;
and the exhaust mechanism comprises an exhaust pipeline communicated with the chamber and a jet vacuum pump installed on the exhaust pipeline, and the jet vacuum pump is used for extracting and exhausting the gas and the pollutant particles.
A second aspect of the present invention provides an automatic cleaning method of a photoresist baking apparatus, which is implemented by the photoresist baking apparatus as described above, the automatic cleaning method of a photoresist baking apparatus comprising:
starting an air pump and a jet vacuum pump, wherein the air pump supplies air to the chamber, and the jet vacuum pump pumps and discharges the air and pollutant particles;
detecting the content of pollutant particles;
and when the content of the pollutant particles is lower than the preset value, closing the jet vacuum pump and the air pump.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention; also, like parts are designated by like reference numerals throughout the drawings. In the drawings:
FIG. 1 schematically shows a schematic structural view of a photoresist baking apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the photoresist baking apparatus shown in FIG. 1 in a first state (a state when an inlet end of a three-way valve is communicated with a first outlet end);
FIG. 3 is a schematic structural diagram of the photoresist baking apparatus shown in FIG. 1 in a second state (a state when an inlet end of the three-way valve is communicated with a second outlet end);
fig. 4 schematically shows a flowchart of an automatic cleaning method of a photoresist baking apparatus according to an embodiment of the present invention.
The reference numbers are as follows:
10. a chamber; 11. a stage; 12. an air inlet; 13. an air outlet;
20. an air supply mechanism; 21. an air pump; 22. a gas supply line;
30. an exhaust mechanism; 31. an exhaust line; 32. a jet vacuum pump; 33. a three-way valve; 331. an air inlet end; 332. a first air outlet end; 333. a second air outlet end;
40. a base substrate.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless specifically identified as an order of performance. It should also be understood that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For convenience of description, spatially relative terms, such as "inner", "outer", "lower", "below", "upper", "above", and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
As shown in fig. 1 to 3, fig. 1 schematically shows a schematic structural diagram of a photoresist baking apparatus according to an embodiment of the present invention, the present invention provides a photoresist baking apparatus, the photoresist baking apparatus includes a chamber 10, and a gas supply mechanism 20 and a gas exhaust mechanism 30 communicated with the chamber 10, the chamber 10 is used for placing and heating and baking a substrate 40 coated with photoresist thereon, the gas supply mechanism 20 includes a gas pump 21 and a gas supply pipeline 22, the gas supply pipeline 22 is respectively communicated with the gas pump 21 and the chamber 10, the gas pump 21 is used for supplying gas into the chamber 10, the gas can flow to the gas exhaust mechanism 30 along with pollutant particles in the chamber 10, the gas exhaust mechanism 30 includes a gas exhaust pipeline 31 communicated with the chamber 10 and a jet vacuum pump 32 installed on the gas exhaust pipeline 31, the jet vacuum pump 32 pumps and exhausts the gas and the pollutant particles by generating low pressure, thereby cleaning the chamber 10.
Specifically, the air supply mechanism 20 includes an air pump 21 and an air supply line 22, and the air supply line 22 may be configured as a rubber tube or a plastic tube, for example; the air supply line 22 has one end communicating with the chamber 10 and the other end communicating with the air pump 21. The air pump 21 may be configured as an electric air pump 21, and the electric air pump 21 is configured to pump air into the chamber 10 through an air supply line 22. It should be noted that the electric air pump 21 compresses air by electric power, and pumps the pressurized air into the chamber 10, and the pressurized air enters the chamber 10 and contacts with the pollutant particles attached to the inner wall of the chamber 10, and the pressurized air can strip the pollutant particles and carry the stripped pollutant particles to the exhaust mechanism 30.
The exhaust mechanism 30 includes an exhaust pipe 31 and a jet vacuum pump 32, and the exhaust pipe 31 may be a rubber pipe or a plastic pipe; one end of the exhaust pipeline 31 is communicated with the chamber 10, the gas carrying pollutant particles in the chamber 10 can enter the exhaust pipeline 31, and the other end of the exhaust pipeline 31 can be directly communicated with the external environment or communicated with a gas collecting device or a gas processing device.
The jet vacuum pump 32 is installed on the exhaust pipe 31, and may be specifically installed at any position of the exhaust pipe 31, for example, when the jet vacuum pump 32 is installed at one end of the exhaust pipe 31 far away from the chamber 10, the gas carrying the pollutant particles passes through the exhaust pipe 31 and the jet vacuum pump 32 in sequence, and is then exhausted from the gas outlet end of the jet vacuum pump 32. The jet vacuum pump 32 uses air as a medium to extract the pollutant particle-laden gas in the exhaust line 31 by generating a low pressure, thereby accelerating the exhaust of the pollutant particles.
In summary, the photoresist baking apparatus provided in this embodiment can clean the chamber 10 after baking the substrate 40 coated with the photoresist; the photoresist baking equipment provided by the embodiment realizes stripping and cleaning of pollutant particles in the chamber 10 by arranging the air supply mechanism 20, realizes discharge of the pollutant particles by arranging the exhaust mechanism 30, improves cleaning efficiency, simultaneously avoids pollution of the pollutant particles to the chamber 10, avoids spherical defects of the photoresist possibly caused by the pollutant particles dropping on the substrate base plate 40, and accordingly improves yield of semiconductor devices.
It is further understood that, as shown in fig. 1, a stage 11 for placing the substrate 40 and a heating device (not shown in the figure) for baking the substrate 40 are disposed in the chamber 10, and the heating device may be configured as a heating plate mounted on the stage 11, and the heating plate is used for heating the substrate 40 to cure and set the photoresist on the substrate 40.
Further, as shown in fig. 1 or fig. 3, a plurality of gas inlets 12 are provided at the bottom of the chamber 10, and the gas supply pipeline 22 is connected to the plurality of gas inlets 12 respectively, and the connection manner may be a fixed connection or a detachable connection. The bottom of the chamber 10 refers to a position in the chamber 10 below the stage 11. Because the substrate base plate 40 coated with the photoresist is heated, high-temperature organic matters volatilized by the photoresist can float to the inner wall and the top of the chamber 10 to be crystallized to form pollutant particles, the gas inlet 12 is arranged at the bottom of the chamber 10 in the embodiment, and the gas entering from the gas inlet 12 can be ensured to be fully contacted with the pollutant particles at each part in the chamber 10, so that the gas can be stripped.
The number of the air inlets 12 is set to be plural, for example, as shown in fig. 1, six air inlets 12 are provided, and four, eight or ten air inlets 12 may also be provided; the provision of a plurality of gas inlets 12 further increases the sufficient contact between the gas and the contaminant particles within the chamber 10.
On the basis of the above embodiment, the plurality of air inlets 12 may be arranged in an array at the bottom of the chamber 10, or may be arranged along a straight line at the bottom of the chamber 10. Further, the plurality of gas inlets 12 are uniformly arranged, and the uniformity of the gas entering the chamber 10 can be ensured by the uniform arrangement mode, so that the problem that pollutant particles on part of the inner wall cannot be peeled off due to non-uniform gas flow is avoided.
Because the number of the air inlets 12 is set to be multiple, correspondingly, the air supply pipeline 22 is provided with a plurality of branch pipes with the same number as the number of the air inlets 12, as shown in fig. 1, the air supply pipeline 22 comprises a main pipe and a plurality of branch pipes communicated with the main pipe, each branch pipe is respectively connected with one air inlet 12, the connection mode can be threaded connection, clamping connection or bonding connection, and a sealing element, for example, a sealing rubber ring can be selected and used for improving air tightness and preventing gas loss, can be arranged between the air inlets 12 and the branch pipes of the air supply pipeline 22; the part of the branch pipe extending into the chamber 10 may also be provided with an air nozzle for assisting the flow of the gas and providing a guide for the gas. One end of the main pipe far away from the chamber 10 is communicated with the air pump 21, and air pumped by the air pump 21 enters the chamber 10 through the main pipe, the branch pipe and the air inlet 12.
Further, the air pump 21 is configured as an air booster pump, the pressure range of the air generated by the air booster pump is set to 0.3Mpa-0.6Mpa, and the pressurized air can exert pressure on the inner wall of the chamber 10 after entering the chamber 10, so as to strip off the contaminant particles on the inner wall of the chamber 10. The gas may be air or an inert gas, and is illustratively nitrogen.
Further, at least one exhaust port 13 is disposed at the top of the chamber 10, and it should be noted that the top of the chamber 10 refers to a position above the stage 11 in the chamber 10, and is disposed opposite to the bottom of the chamber 10; in the embodiment, the exhaust port 13 is arranged at the top of the chamber 10, so that the exhaust port 13 is opposite to the air inlet 12, thereby ensuring that the air is smoothly discharged after being fully contacted with the inner wall of the chamber 10, and further ensuring that pollutant particles are smoothly discharged.
The number of the exhaust ports 13 may be one or plural. Illustratively, as shown in fig. 1 or fig. 3, the number of the exhaust ports 13 is set to one, and the exhaust ports 13 are connected to one end of the exhaust pipe 31 in a manner of screwing, clipping, or bonding, and the gas carrying the pollutant particles flows into the exhaust pipe 31 from the exhaust ports 13 and is exhausted from the exhaust pipe 31.
The jet vacuum pump 32 is installed on the exhaust pipe 31, and the jet vacuum pump 32 injects air or other gases and then ejects the gases at a high speed, so as to generate a low pressure in the cavity, for example, the low pressure generated by the jet vacuum pump 32 may be in a range of 1kpa to 100kpa, so that a pressure difference is formed in the cavity of the jet vacuum pump 32, and the gases carrying the pollutant particles are drawn into the cavity and exhausted through the diffusion pipe of the jet vacuum pump 32.
In one embodiment, the jet vacuum pump 32 is mounted at the end of the exhaust line 31 remote from the chamber 10, whereupon the gas carrying contaminant particles passes through the exhaust line 31 and the jet vacuum pump 32 in sequence and is exhausted by the jet vacuum pump 32.
In another embodiment, the jet vacuum pump 32 is installed in the middle of the exhaust pipeline 31, and specifically, as shown in fig. 1 or fig. 3, the exhaust mechanism 30 further includes a three-way valve 33, the three-way valve 33 is disposed on the exhaust pipeline 31, an inlet end 331 and a first outlet end 332 of the three-way valve 33 are respectively communicated with the exhaust pipeline 31, and a second outlet end 333 of the three-way valve 33 is communicated with the jet vacuum pump 32.
On the basis, as shown in fig. 2, the direction of the arrow in the figure is the gas flow direction, when the gas inlet 331 of the three-way valve 33 is communicated with the first gas outlet 332, the gas carrying the pollutant particles is not sucked by the jet vacuum pump 32 and is pumped out from the exhaust pipeline 31 by the pumping system provided by the factory; as shown in fig. 3, the direction of the arrow is a gas flow direction, and when the inlet 331 of the three-way valve 33 is communicated with the second outlet 333, the gas carrying the contaminant particles is pumped by the jet vacuum pump 32 and is exhausted by the jet vacuum pump 32. Therefore, the flow direction of the gas can be controlled by the three-way valve 33 in the embodiment, so that the position of pollutant particle discharge is changed, namely, the pollutant particle discharge mode can be selected according to actual requirements, and the multifunctional performance of the photoresist baking equipment is realized.
For example, when the photoresist baking apparatus heats and bakes the substrate 40, high-temperature organic matters generated by heating the photoresist float in the chamber 10, at this time, the three-way valve 33 may be adjusted to connect the gas inlet 331 with the first gas outlet 332, so that the gas entering the chamber 10 may be pumped out from the gas exhaust pipeline 31 by the gas pumping system provided by the factory along with the floating high-temperature organic matters; after the baking process is finished, part of high-temperature organic matters are crystallized on the inner wall of the chamber 10 to form pollutant particles, and at the moment, the three-way valve 33 can be adjusted to be communicated with the air inlet end 331 and the second air outlet end 333, so that the pollutant particles can be stripped from the air entering the chamber 10 and flow into the exhaust pipeline 31 along with the pollutant particles, and the pollutant particles are exhausted by the jet vacuum pump 32 after being extracted by the jet vacuum pump 32, thereby realizing the automatic cleaning of the chamber 10.
In addition, please refer to the prior art for other structures of the photoresist baking apparatus, which are not described herein again.
As shown in fig. 3 and 4, the present invention further provides an automatic cleaning method of a photoresist baking apparatus, which is implemented by the above photoresist baking apparatus, the automatic cleaning method of the photoresist baking apparatus comprising the steps of:
starting the air pump 21 and the jet vacuum pump 32, wherein the air pump 21 supplies air to the chamber 10, and the jet vacuum pump 32 pumps and discharges the air and pollutant particles; illustratively, the air pump 21 and the jet vacuum pump 32 may be turned on simultaneously or sequentially. After the air pump 21 is opened, air is pumped into the air supply pipeline 22, enters the chamber 10 from the air inlet 12 communicated with the air supply pipeline 22, is contacted with the inner wall of the chamber 10 and then peels off pollutant particles attached to the inner wall, flows to the air outlet 13 along with the pollutant particles, enters the air exhaust pipeline 31 communicated with the air outlet 13, and is exhausted under the pumping action of the jet vacuum pump 32.
And detecting the content of the pollutant particles, and when the content of the pollutant particles is lower than a preset value, closing the jet vacuum pump 32 and the air pump 21, wherein the air pump 21 and the jet vacuum pump 32 can be closed at the same time when closed, or can be closed in sequence. There are various ways to detect the content of contaminant particles:
for example, the concentration detection device may be used by a worker to detect the content of the pollutant particles in the pollutant particle-carrying gas discharged from the chamber 10, and when the concentration of the pollutant particles is lower than a preset value, the worker manually turns off the jet vacuum pump 32 and the air pump 21, for example, the preset value is set to be 0.1% and the jet vacuum pump 32 and the air pump 21 are turned off when the content is lower than 0.1%, and the preset value is not specifically limited in this embodiment and may be set according to an actually required cleaning degree.
As another example, the detection method may further include: arranging a monitoring camera capable of shooting the inner wall of the chamber 10; or a sensor capable of detecting the concentration of contaminant particles within the chamber 10; or other monitoring device capable of observing and/or detecting the level of contaminant particles to determine whether the chamber 10 is clean; on the basis, a control device which is respectively connected with the monitoring device, the air pump 21 and the jet vacuum pump 32 through signals can be further arranged, when the monitoring device detects that the content of pollutant particles in the chamber 10 is lower than a preset value, a signal is transmitted to the control device, and the control device closes the jet vacuum pump 32 and the air pump 21.
It should be noted that the automatic cleaning method of the photoresist baking apparatus provided in this embodiment may be performed during the baking process of the substrate base plate 40, or may be performed after the baking process is completed.
Illustratively, as shown in fig. 3, in the photoresist baking apparatus, the exhaust mechanism 30 includes an exhaust pipe 31, and a three-way valve 33 and a jet vacuum pump 32 disposed on the exhaust pipe 31, an inlet 331 and a first outlet 332 of the three-way valve 33 are respectively communicated with the exhaust pipe 31, and a second outlet 333 of the three-way valve 33 is communicated with the jet vacuum pump 32, when the photoresist baking apparatus needs to be automatically cleaned, the inlet 331 and the second outlet 333 of the three-way valve 33 can be communicated, after the contaminant particles are stripped by the gas pumped into the chamber 10 by the air pump 21 in the gas supply mechanism 20, the gas carrying the contaminant particles is extracted by the jet vacuum pump 32 by generating low pressure, and then is exhausted, thereby achieving automatic cleaning of the chamber 10.
According to the automatic cleaning method of the photoresist baking equipment, the gas provided by the air pump 21 is used for stripping and cleaning the pollutant particles in the chamber 10, the gas and the pollutant particles are discharged by the jet vacuum pump 32, automatic cleaning is realized, cleaning efficiency is improved, meanwhile, the pollution of the pollutant particles to the chamber 10 is avoided, the spherical defect of the photoresist possibly caused after the pollutant particles drop on the substrate base plate 40 is avoided, and therefore the yield of semiconductor devices is improved.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A photoresist baking apparatus, comprising:
a chamber for placing and heating a substrate coated with a photoresist;
the air supply mechanism comprises an air pump and an air supply pipeline, the air supply pipeline is communicated with the air pump and the chamber, and the air pump is used for supplying air to the chamber;
and the exhaust mechanism comprises an exhaust pipeline communicated with the chamber and a jet vacuum pump arranged on the exhaust pipeline, and the jet vacuum pump is used for extracting and exhausting the gas and the pollutant particles in the chamber.
2. The photoresist baking apparatus of claim 1, wherein a plurality of gas inlets are provided at a bottom of the chamber, and the gas supply lines are respectively connected to the plurality of gas inlets.
3. The photoresist baking apparatus of claim 2, wherein the plurality of gas inlets are uniformly arranged at the bottom of the chamber.
4. The photoresist baking apparatus of claim 1, wherein the gas pump is configured as a gas booster pump.
5. The photoresist baking apparatus of claim 4, wherein the gas booster pump generates a gas pressure in a range of 0.3Mpa to 0.6 Mpa.
6. The photoresist baking apparatus of claim 5, wherein the gas is nitrogen.
7. The photoresist baking apparatus according to any one of claims 1 to 6, wherein the chamber is provided with at least one exhaust port at a top thereof, the exhaust port being connected to one end of the exhaust line.
8. The photoresist baking apparatus of claim 7, wherein the exhaust mechanism further comprises a three-way valve disposed on the exhaust pipeline, an air inlet end and a first air outlet end of the three-way valve are respectively communicated with the exhaust pipeline, and a second air outlet end of the three-way valve is communicated with the jet vacuum pump.
9. The photoresist baking apparatus of claim 8, wherein the pressure generated by the jet vacuum pump is in a range of 1kpa to 100 kpa.
10. An automatic cleaning method of a resist baking apparatus, characterized in that the automatic cleaning method of a resist baking apparatus is carried out by the resist baking apparatus according to any one of claims 1 to 9, the automatic cleaning method of a resist baking apparatus comprising:
starting an air pump and a jet vacuum pump, wherein the air pump supplies air to the chamber, and the jet vacuum pump extracts and exhausts the air and pollutant particles in the chamber;
detecting the content of pollutant particles;
and when the content of the pollutant particles is lower than the preset value, closing the jet vacuum pump and the air pump.
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| CN202010702044.4A CN112015051A (en) | 2020-07-21 | 2020-07-21 | Photoresist baking equipment and automatic cleaning method thereof |
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| CN202010702044.4A CN112015051A (en) | 2020-07-21 | 2020-07-21 | Photoresist baking equipment and automatic cleaning method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113204180A (en) * | 2021-04-16 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Photoetching method |
| US11520246B1 (en) * | 2021-08-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Highly efficient automatic particle cleaner method for EUV systems |
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| JPH05177109A (en) * | 1991-12-27 | 1993-07-20 | Kondo Kogyo Kk | Clean drying apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113204180A (en) * | 2021-04-16 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Photoetching method |
| CN113204180B (en) * | 2021-04-16 | 2024-04-26 | 华虹半导体(无锡)有限公司 | Lithographic method |
| US11520246B1 (en) * | 2021-08-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Highly efficient automatic particle cleaner method for EUV systems |
| US11953839B2 (en) | 2021-08-30 | 2024-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Highly efficient automatic particle cleaner method for EUV systems |
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