CN112002762A - Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof - Google Patents
Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof Download PDFInfo
- Publication number
- CN112002762A CN112002762A CN202010750918.3A CN202010750918A CN112002762A CN 112002762 A CN112002762 A CN 112002762A CN 202010750918 A CN202010750918 A CN 202010750918A CN 112002762 A CN112002762 A CN 112002762A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- nitrogen
- region
- thin film
- gradient channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 199
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 100
- 239000010409 thin film Substances 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 90
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000004544 sputter deposition Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 36
- 229910052786 argon Inorganic materials 0.000 claims abstract description 33
- 230000007704 transition Effects 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000001039 wet etching Methods 0.000 claims abstract description 21
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 34
- 238000000137 annealing Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 230000001276 controlling effect Effects 0.000 description 25
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 21
- 238000005530 etching Methods 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 235000006408 oxalic acid Nutrition 0.000 description 7
- 238000004506 ultrasonic cleaning Methods 0.000 description 7
- 238000013112 stability test Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 nitride zinc oxide Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a gradient channel nitrogen-doped zinc oxide thin film transistor and a preparation method thereof. The method comprises the steps of firstly, growing a layer of silicon dioxide p-type silicon wafer as a substrate, and depositing a zinc oxide ultrathin region with a certain thickness and high carrier concentration under the conditions of high sputtering pressure and pure argon; under the condition that the sputtering deposition is not interrupted, the sputtering pressure is adjusted to continuously deposit the zinc oxide transition region with low carrier concentration; then introducing a certain amount of nitrogen, and depositing a gradient nitrogen-doped zinc oxide passivation region; patterning the zinc oxide channel layer by a wet etching method; and finally, depositing an aluminum film on the channel layer, and patterning the aluminum source and drain electrodes by a wet etching method to obtain the gradient channel nitrogen-doped zinc oxide film transistor. The metal oxide thin film transistor has large on-current, on-off current ratio and carrier mobility, and has excellent bias stress and illumination stability.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a gradient channel nitrogen-doped zinc oxide thin film transistor and a preparation method thereof.
Background
Thin Film Transistors (TFTs) are an essential component of flat panel displays, and their function is to drive the pixel switches in the flat panel display, and to some extent the characteristics of the display depend on the performance of the TFTs. Large-area display with high resolution, high frame rate, and low power consumption requires a thin film transistor with a large response rate and driving current; the response rate depends on the carrier field effect mobility, sub-threshold swing and threshold voltage of the thin film transistor. However, there are many factors that affect the device performance, including the quality of the active layer, the insulating layer, and the interface between the different layers, where the semiconductor active layer plays a decisive role. Finding ways to improve the electrical performance and stability of transistors is crucial for future innovations and advances.
Currently, silicon-based thin film transistors are dominant in the field of flat panel displays such as Active Matrix Liquid Crystal Displays (AMLCDs) and Active Matrix Organic Light Emitting Diodes (AMOLEDs) as a mainstream technology. However, hydrogenated amorphous silicon generally has a very low mobility of 1cm2Vs and photosensitivity; the field-effect carrier mobility of polysilicon silicon thin films is high, but their opacity and uneven distribution of grain structure are not ideal for large-size displays. In addition, relatively high temperatures are also required during amorphous silicon and polysilicon processing, and it is therefore difficult to bond them to many plastic materials. In order to meet the technical requirements of high resolution, large size, flexibility, transparency and the like of next generation displays, metal oxide is considered to be a promising low-cost transparent electronic material. Of the various metal oxides, zinc oxide exhibits high carrier mobility (> 100 cm)2Vs) with high carrier mobility, which can meet the technical requirements for high-resolution active-drive liquid crystal display and current-driven active organic light emitting display. In addition, the zinc oxide has the characteristics of high light transmittance, room-temperature deposition, light insensitivity and the like, and has important significance for flexible transparent electronic products. Current methods of preparing zinc oxide include sputter deposition, pulsed laser deposition, chemical vapor deposition, atomic layer deposition, and sol-gel methods, which means greater process selectivity and compatibility.
However, at present, undoped zinc oxide thin film transistors generally have low on-current, large subthreshold swing and small field effect mobility. Generally, a double-layer TFT structure using two metal oxide thin films as a channel layer can enhance accumulation and improve mobility, but the existence of a double-layer channel interface barrier may hinder depletion and reduce a turn-off speed. Meanwhile, the stability of the zinc oxide-based thin film transistor device is always a challenging problem, mainly represented by threshold voltage shift caused by positive gate bias stress (PBS), and generally, the preparation of a passivation layer and post annealing can reduce the defect density of an active layer/dielectric interface, thereby improving the stability of the zinc oxide-based thin film transistor device. In addition, related research shows that nitrogen doping is an effective method for regulating and controlling a zinc oxide channel layer, and nitrogen atoms can reduce defects in the film. TFT switching elements are often exposed to backlight radiation, and therefore gate bias stress and stability under illumination (NBLS) are critical. In conclusion, reasonable structural design and defect passivation are effective methods for improving the electrical performance and stability of the zinc oxide-based TFT, and have important significance for further commercial application of the zinc oxide-based TFT.
Disclosure of Invention
In view of the above, the present invention provides a gradient channel nitrogen-doped zinc oxide thin film transistor and a method for manufacturing the same, in which both the electrical performance and the stability of the thin film transistor are improved.
The technical scheme adopted by the invention is as follows:
a gradient channel nitrogen-doped zinc oxide thin film transistor comprises a substrate, a gradient channel and a source electrode and a drain electrode from bottom to top in sequence, wherein the gradient channel consists of a high carrier concentration ultrathin region, a low carrier concentration transition region and a nitrogen-doped zinc oxide passivation region from bottom to top.
The substrate is a p-type silicon wafer on which a layer of silicon dioxide is grown, the silicon dioxide is used as a grid dielectric layer, and the thickness of the silicon dioxide is 80-120 nm.
The depth of the high carrier concentration ultrathin region is 0.5-5nm, the depth of the low carrier concentration transition region is 20-35nm, the depth of the nitrogen-doped zinc oxide passivation region is 5-20nm, and the total depth of the low carrier concentration transition region and the nitrogen-doped zinc oxide passivation region is 35-45 nm.
The number of the source and drain electrodes is two, the source and drain electrodes are located on two sides above the gradient channel, the thickness of the source and drain electrodes is 50-120nm, and the source and drain electrodes are made of aluminum.
A method for preparing a gradient channel nitrogen-doped zinc oxide thin film transistor comprises the following steps:
1) cleaning a substrate, wherein the substrate is a p-type silicon wafer on which a layer of silicon dioxide grows;
2) depositing an active layer on the substrate by adopting a magnetron sputtering method at room temperature to form a high carrier concentration ultrathin region of 0.5-5 nm;
3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region of 20-35 nm;
4) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region of 5-20 nm;
5) patterning the active layer by a wet etching method to form a gradient channel region with a certain size;
6) depositing a layer of 50-120nm aluminum film on the gradient channel region by adopting a magnetron sputtering method at room temperature, patterning aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel between the two aluminum source and drain electrodes;
7) and placing the transistor in an annealing furnace for annealing, and obtaining the gradient channel nitrogen-doped zinc oxide thin film transistor after the annealing is finished.
The deposition conditions in the step 2) are controlled as follows: the flow rate of pure argon is 15sccm, the radio frequency power is 100-120W, and the sputtering pressure is 3-9 Pa.
The deposition conditions in the step 3) are controlled as follows: the flow rate of pure argon is 15sccm, the radio frequency power is 100-120W, and the sputtering pressure is 0.3-0.9 Pa.
In the step 4), the deposition conditions are controlled to be that the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 100-120W, and the sputtering pressure is 0.3-0.9 Pa.
The etching in the step 5) adopts a technical means commonly used in the field, the steps are photoetching, developing and etching, a gradient channel with a certain size is processed, the etching is wet etching, and the conditions are as follows: 4% oxalic acid solution, spraying at 40 ℃. The width of the gradient channel is 50 micrometers, and the length of the gradient channel is 100 micrometers;
the deposition conditions in the step 6) are that the gas is pure argon, the sputtering pressure is 0.3-0.6Pa, the sputtering power is 50-80W, and the substrate temperature is room temperature.
The etching in the step 6) adopts a technical means commonly used in the field, the steps are photoetching, developing and etching, and the aluminum source and drain electrodes with a certain size are processed under the following etching conditions: the proportion is 80: 5: 5:10 of mixed solution of phosphoric acid, nitric acid, acetic acid and water, and spraying at 40 ℃; a gradient channel with the width of 45 micrometers and the length of 15 micrometers is formed between the two aluminum source drain electrodes;
the annealing condition in the step 7) is air at 200 ℃ for 5 minutes.
Compared with the prior art, the invention has the beneficial technical effects that:
1. according to the invention, the high carrier concentration zinc oxide ultrathin region is introduced into the space charge region to realize the enhancement of accumulation so as to improve the electrical transport performance of the device, and the low carrier concentration zinc oxide transition region and the nitrogen-doped zinc oxide passivation region are sequentially introduced into the back channel main body and the outer surface region to cooperatively regulate the threshold voltage of the device and improve the bias stress stability. The thin film transistor prepared by the invention has large on-current, on-off current ratio and carrier mobility, and has excellent bias stress and illumination stability.
2. The thin film transistor is prepared by adopting a magnetron sputtering method during preparation, the process is simple, the adhesion between the thin film and the substrate is good, and the deposition rate is high; the highest temperature does not exceed 200 ℃ in the whole preparation process, and the preparation method is suitable for flexible and glass substrates.
3. The gradient channel is designed in the thin film transistor, the high carrier concentration zinc oxide ultrathin region in the gradient channel enhances the accumulated electron concentration, the driving current and the field effect mobility of the device are increased, and the threshold voltage and the sub-threshold swing amplitude are reduced.
4. The zinc oxide transition region with low carrier concentration and the nitrogen-doped zinc oxide passivation region in the gradient channel can effectively reduce the oxygen vacancy defect on the upper surface of the channel layer, thereby improving the bias photoelectric stress stability of the device.
5. The high carrier concentration zinc oxide ultrathin region, the low carrier concentration zinc oxide transition region and the nitrogen-doped zinc oxide passivation region in the gradient channel are sequentially deposited, the deposition is continuous, and the zinc oxide ultrathin region, the low carrier concentration zinc oxide transition region and the nitrogen-doped zinc oxide passivation region belong to the same material components, so that the thin film growth is not interrupted in the deposition process, and junction interfaces do not exist among the three regions, so that the degradation of device performance caused by the introduction of interfaces or impurities is avoided.
Drawings
Figure 1 is a schematic diagram of the gradient channel zinc oxide thin film transistor device structure of the present invention. The device comprises:
a silicon wafer;
silicon dioxide;
a high carrier concentration zinc oxide ultra-thin region;
a low carrier concentration zinc oxide transition region;
a nitrogen-doped zinc oxide passivation region;
and an aluminum source drain electrode.
FIG. 2 is a graph showing the change in resistivity and carrier concentration of the zinc oxide thin film according to the sputtering pressure in test example 1.
Fig. 3 is a transfer characteristic curve of the uniform channel zinc oxide thin film transistor prepared in experimental example 2, in which the sputtering pressures of the channel layers were 0.3Pa, 0.9Pa, 3Pa, and 9Pa, respectively.
Figure 4 is a graph of the transfer characteristics of uniform channel and gradient channel zinc oxide thin film transistors prepared in test 2 (uniform channel) and comparative examples 1-3 (gradient channel); wherein the sputtering pressure of the uniform channel thin film transistor is 0.9 Pa.
Figure 5 is a graph of the output characteristics of uniform channel and gradient channel zinc oxide thin film transistors prepared in test 2 (uniform channel) and comparative example 1 (gradient channel); wherein the sputtering pressure of the uniform channel thin film transistor is 0.9 Pa.
Figure 6 is a transfer characteristic curve for the graded channel nitride zinc oxide thin film transistors fabricated in examples 1-3 (graded channel nitride).
Figure 7 is a graph of the transfer characteristics of the graded channel and graded channel nitride doped zinc oxide thin film transistors prepared in comparative example 1 (graded channel) and example 1 (graded channel nitride).
Figure 8 is a graph showing the transfer characteristic of the graded channel zinc oxide thin film transistor device prepared in comparative example 1 during the forward bias stress stability test.
Figure 9 is a transfer characteristic curve of the negative bias light stress stability test of the gradient zinc oxide channel thin film transistor device prepared in comparative example 1.
Figure 10 is a transfer characteristic curve of the forward bias stress stability test of the graded channel nitrogen-doped zinc oxide thin film transistor device prepared in example 1.
Fig. 11 is a transfer characteristic variation curve of the negative bias illumination stress stability test of the gradient channel nitrogen-doped zinc oxide thin film transistor prepared in example 1.
Fig. 12 is a graph showing the relationship between the threshold voltage variation with time in the stability test of the positive bias stress and the negative bias light stress of the gradient channel and the gradient channel nitrogen-doped zinc oxide thin film transistor respectively prepared in comparative example 1 (gradient channel) and example 1 (gradient channel nitrogen doping).
Fig. 13 is a polarization microscope image of the gradient channel zinc oxide thin film transistor prepared in example 1.
Detailed Description
The following examples are given to illustrate specific embodiments of the present invention, but are not intended to limit the scope of the present invention in any way.
The substrates used in the following test examples, comparative examples and examples were p-type silicon wafers on which a layer of silicon dioxide was grown.
Test example 1: and (3) investigating the influence of sputtering pressure on the resistivity and the carrier concentration of the film.
(1) Depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm and the radio frequency power of 120W, and depositing six zinc oxide channel layers with the thickness of 40nm by regulating the sputtering pressure to be 0.3Pa, 0.6Pa, 0.9Pa, 3Pa, 6Pa and 9Pa and controlling the deposition time.
(2) After the channel layer is deposited, a mask plate is fixed on the channel layer, and a Van der Pauw aluminum electrode is deposited on the active layer by adopting magnetron sputtering under the room temperature condition. And detecting the resistivity of the film and the carrier concentration of the film by a Hall effect test system.
The electrical properties of the prepared six zinc oxide thin films are shown in fig. 2, and as a result, it was found that: as the sputtering pressure increases, the electron concentration of the thin film shows a tendency of overall rising in transition from the insulating type to the near-conductor type, and the resistivity shows a tendency of overall falling in transition from the insulating type to the near-conductor type. This shows that the sputtering pressure has a large-scale control effect on the semiconductor characteristics of the zinc oxide film.
Test example 2: the influence of the sputtering pressure on the transfer characteristics of the thin film transistor was examined.
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm and the radio frequency power of 120W, adjusting the sputtering pressure to be 0.3Pa, 0.9Pa, 3Pa and 9Pa, and depositing four zinc oxide channel layers with the thickness of 40nm by controlling the deposition time;
(3) after the channel layer is deposited, carrying out wet etching patterning processing on the active layer;
(4) depositing an aluminum film on the channel by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 80W and the working pressure of 0.5Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method;
(5) finally, the prepared thin film transistor is placed in an annealing furnaceUnder air atmosphere, 200oC, annealing for 5 minutes to obtain the uniform channel zinc oxide thin film transistor. The thin film transistor comprises a substrate, a zinc oxide thin film and an aluminum electrode from bottom to top in sequence.
Experimental example 2 four thin film transistor devices prepared according to transfer characteristic curves are shown in fig. 3, and the sputtering pressure of the channel layer has a great influence on the electrical properties of the devices. Thin film transistors with sputtering pressures of 0.9Pa exhibit an enhancement mode of operation with maximum on-off current ratio, minimum subthreshold swing, moderate threshold voltage and mobility.
Comparative example 1
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a high carrier concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio frequency power of 120W, firstly adjusting the sputtering pressure to 9Pa, and depositing the high carrier concentration zinc oxide ultrathin region with the depth of 0.6nm by controlling the deposition time;
(3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region, wherein the flow of pure argon is 15sccm, the radio frequency power is 120W, the sputtering pressure is 0.9Pa, and depositing the low carrier concentration zinc oxide ultrathin region with the depth of 40nm by controlling the deposition time;
(4) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(5) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 80W and the working pressure of 0.5Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(6) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain the gradient channel thin film transistor a. The gradient channel thin film transistor sequentially comprises a substrate, a gradient channel and a source electrode and a drain electrode from bottom to top, wherein the gradient channel consists of a high carrier concentration ultrathin region and a low carrier concentration transition region from bottom to top.
The transfer characteristic curve and the output characteristic curve of the thin film transistor prepared in comparative example 1 are respectively shown in fig. 4 and 5, and the gradient channel has a great gain effect on the electrical properties of the thin film transistor, as shown in a large on-off current ratio, a high field effect mobility, and a very high on-current of approximately 2 mA, compared to the uniform channel in experimental example 2.
Comparative example 2
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a high carrier concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio frequency power of 120W, firstly adjusting the sputtering pressure to 9Pa, and depositing the high carrier concentration zinc oxide ultrathin region with the depth of 0.6nm by controlling the deposition time;
(3) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region; the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 120W, the sputtering pressure is 0.9Pa, and a nitrogen-doped zinc oxide passivation area with the depth of 40nm is deposited by controlling the deposition time;
(4) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(5) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 80W and the working pressure of 0.5Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(6) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain a gradient channel thin film transistor b. The gradient channel thin film transistor sequentially comprises a substrate, a gradient channel and a source electrode and a drain electrode from bottom to top, wherein the gradient channel consists of a high carrier concentration ultrathin region and a nitrogen-doped zinc oxide passivation region from bottom to top.
Comparative example 3
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a low-carrier-concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio-frequency power of 120W, firstly adjusting the sputtering pressure to be 0.9Pa, and depositing the low-carrier-concentration zinc oxide ultrathin region with the depth of 0.6nm by controlling the deposition time;
(3) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region; the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 120W, the sputtering pressure is 0.9Pa, and a nitrogen-doped zinc oxide passivation area with the depth of 40nm is deposited by controlling the deposition time;
(4) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(5) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 80W and the working pressure of 0.5Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(6) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain a gradient channel thin film transistor c. The gradient channel thin film transistor comprises a substrate, a gradient channel and a source electrode and a drain electrode from bottom to top in sequence, wherein the gradient channel consists of a low carrier concentration transition region and a nitrogen-doped zinc oxide passivation region from bottom to top.
The transfer characteristics of the thin film transistors prepared in comparative examples 2 to 3 are shown in fig. 4, and the graded channel thin film transistors b and c exhibited poor electrical properties.
Example 1
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a high carrier concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio frequency power of 120W, firstly adjusting the sputtering pressure to 9Pa, and depositing the high carrier concentration zinc oxide ultrathin region with the depth of 0.6nm by controlling the deposition time;
(3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region, wherein the flow of pure argon is 15sccm, the radio frequency power is 120W, the sputtering pressure is 0.9Pa, and depositing the low carrier concentration zinc oxide ultrathin region with the depth of 25nm by controlling the deposition time;
(4) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region; the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 120W, the sputtering pressure is 0.9Pa, and a nitrogen-doped zinc oxide passivation area with the depth of 15 nm is deposited by controlling the deposition time;
(5) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(6) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 80W and the working pressure of 0.5Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(7) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain the gradient channel nitrogen-doped zinc oxide thin film transistor.
The gradient channel nitrogen-doped zinc oxide thin film transistor sequentially comprises a substrate, a gradient channel and a source and drain electrode from bottom to top, wherein the gradient channel consists of a high carrier concentration ultrathin region, a low carrier concentration transition region and a nitrogen-doped zinc oxide passivation region from bottom to top, and a structural schematic diagram (a gradient channel region) and a polarization microscopic image (for convenience of later performance detection, the source and drain electrode is extended to the substrate) are respectively shown in fig. 1 and fig. 13.
The transfer characteristic curves of the gradient channel nitrogen-doped zinc oxide thin film transistor a prepared in the embodiment 1 are shown in fig. 6 and 7, the influence of proper amount of nitrogen doping on the electrical performance of the thin film transistor is almost negligible, and the gradient channel nitrogen-doped zinc oxide thin film transistor a still has a large on-off current ratio, high field effect mobility and very high on-current of nearly 2 mA. It is noted that, as shown in fig. 10, 11, and 12, the gradient channel n-doped zno thin film transistor has stronger stability compared to fig. 8 and 9 of comparative example 1: in a positive bias stress test of 3600 seconds, the threshold voltage variation is 0.7V; in the negative bias light stress test of 3600 seconds, the threshold voltage variation is 0.9V.
Example 2
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a high-carrier-concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio-frequency power of 100W, firstly adjusting the sputtering pressure to be 6Pa, and depositing the high-carrier-concentration zinc oxide ultrathin region with the depth of 3nm by controlling the deposition time;
(3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region, wherein the flow of pure argon is 15sccm, the radio frequency power is 100W, the sputtering pressure is 0.6Pa, and depositing the low carrier concentration zinc oxide ultrathin region with the depth of 20nm by controlling the deposition time;
(4) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region; the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 100W, the sputtering pressure is 0.6Pa, and a nitrogen-doped zinc oxide passivation area with the depth of 20nm is deposited by controlling the deposition time;
(5) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(6) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 50W and the working pressure of 0.6Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(7) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain the gradient channel nitrogen-doped zinc oxide thin film transistor b.
Example 3
(1) Ultrasonic cleaning with deionized water, acetone, ethanol and deionized water in sequence to remove impurities and stains on the surface of the substrate;
(2) depositing an active layer on a substrate by adopting magnetron sputtering under the condition of room temperature to form a high-carrier-concentration ultrathin region, introducing high-purity argon gas with the flow rate of 15sccm and the radio-frequency power of 110W, firstly adjusting the sputtering pressure to be 3Pa, and depositing the high-carrier-concentration zinc oxide ultrathin region with the depth of 5nm by controlling the deposition time;
(3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region, wherein the flow of pure argon is 15sccm, the radio frequency power is 110W, the sputtering pressure is 0.3Pa, and depositing the low carrier concentration zinc oxide ultrathin region with the depth of 35nm by controlling the deposition time;
(4) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region; the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 110W, the sputtering pressure is 0.3Pa, and a nitrogen-doped zinc oxide passivation area with the depth of 5nm is deposited by controlling the deposition time;
(5) processing a patterned gradient channel region by photoetching, developing and etching by adopting a common technical means in the field, wherein the etching is wet etching under the conditions that: 4% oxalic acid solution is sprayed at 40 ℃, and the width of a gradient channel region is 50 microns, and the length of the gradient channel region is 100 microns;
(6) depositing a layer of aluminum film on the gradient channel region by adopting magnetron sputtering under the condition of room temperature, introducing high-purity argon gas with the flow rate of 15sccm, the radio frequency power of 60W and the working pressure of 0.3Pa, and depositing the aluminum film with the thickness of 100nm by controlling the deposition time; patterning the aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel with the width of 45 micrometers and the length of 15 micrometers between the two aluminum source and drain electrodes;
(7) and finally, placing the prepared thin film transistor in a rapid annealing furnace, and annealing for 5 minutes at 200 ℃ in an air atmosphere to obtain the gradient channel nitrogen-doped zinc oxide thin film transistor c.
The structural schematic diagrams (gradient channel regions) and the polarization microscopic images (for convenience of performance detection, source and drain electrodes are extended to a substrate) of the embodiments 2 and 3 are respectively the same as those in fig. 1 and 13, and the transfer characteristic curves of the gradient channel nitrogen-doped zinc oxide thin film transistors b and c prepared in the embodiments 2 to 3 are shown in fig. 6, which also shows that the influence of proper amount of nitrogen doping on the electrical performance of the thin film transistor is almost negligible, and the thin film transistor still has a large on-off current ratio, high field effect mobility and very high on-current of nearly 2 mA. Examples 2 and 3 have good stability as in example 1.
Finally, the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting, and other modifications or equivalent substitutions made by the technical solutions of the present invention by those of ordinary skill in the art should be covered within the scope of the claims of the present invention as long as they do not depart from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A gradient channel nitrogen-doped zinc oxide thin film transistor is characterized in that: the substrate, the gradient channel and the source and drain electrodes are arranged from bottom to top in sequence, and the gradient channel consists of a high carrier concentration ultrathin region, a low carrier concentration transition region and a nitrogen-doped zinc oxide passivation region from bottom to top.
2. The gradient channel nitrogen-doped zinc oxide thin film transistor of claim 1, which is characterized in that:
the substrate is a p-type silicon wafer on which a layer of silicon dioxide is grown, the silicon dioxide is used as a grid dielectric layer, and the thickness of the silicon dioxide is 80-120 nm.
3. The gradient channel nitrogen-doped zinc oxide thin film transistor of claim 1, which is characterized in that:
the depth of the high carrier concentration ultrathin region is 0.5-5nm, the depth of the low carrier concentration transition region is 20-35nm, the depth of the nitrogen-doped zinc oxide passivation region is 5-20nm, and the total depth of the low carrier concentration transition region and the nitrogen-doped zinc oxide passivation region is 35-45 nm.
4. The gradient channel nitrogen-doped zinc oxide thin film transistor of claim 1, which is characterized in that:
the number of the source and drain electrodes is two, the source and drain electrodes are located on two sides above the gradient channel, the thickness of the source and drain electrodes is 50-120nm, and the source and drain electrodes are made of aluminum.
5. The method for preparing the gradient channel nitrogen-doped zinc oxide thin film transistor of claim 1, which is characterized by comprising the following steps of:
1) cleaning a substrate, wherein the substrate is a p-type silicon wafer on which a layer of silicon dioxide grows;
2) depositing an active layer on the substrate by adopting a magnetron sputtering method at room temperature to form a high carrier concentration ultrathin region of 0.5-5 nm;
3) depositing an active layer on the high carrier concentration ultrathin region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a low carrier concentration transition region of 20-35 nm;
4) depositing an active layer on the carrier concentration transition region by adopting a magnetron sputtering method under the condition of continuing room temperature to form a nitrogen-doped zinc oxide passivation region of 5-20 nm;
5) patterning the active layer by a wet etching method to form a gradient channel region with a certain size;
6) depositing a layer of 50-120nm aluminum film on the gradient channel region by adopting a magnetron sputtering method at room temperature, patterning aluminum source and drain electrodes by adopting a wet etching method, and forming a gradient channel between the two aluminum source and drain electrodes;
7) and placing the transistor in an annealing furnace for annealing, and obtaining the gradient channel nitrogen-doped zinc oxide thin film transistor after the annealing is finished.
6. The method of claim 5, wherein:
the deposition conditions in the step 2) are controlled as follows: the flow rate of pure argon is 15sccm, the radio frequency power is 100-120W, and the sputtering pressure is 3-9 Pa.
7. The method of claim 5, wherein:
the deposition conditions in the step 3) are controlled as follows: the flow rate of pure argon is 15sccm, the radio frequency power is 100-120W, and the sputtering pressure is 0.3-0.9 Pa.
8. The method of claim 5, wherein:
in the step 4), the deposition conditions are controlled to be that the flow rate of pure argon is 15sccm, the flow rate of nitrogen is 0.4sccm, the radio frequency power is 100-120W, and the sputtering pressure is 0.3-0.9 Pa.
9. The method of claim 5, wherein:
the deposition conditions in the step 6) are that the gas is pure argon, the sputtering pressure is 0.3-0.6Pa, the sputtering power is 50-80W, and the substrate temperature is room temperature.
10. The method of claim 5, wherein: the annealing condition in the step 7) is air at 200 ℃ for 5 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010750918.3A CN112002762B (en) | 2020-07-30 | 2020-07-30 | Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010750918.3A CN112002762B (en) | 2020-07-30 | 2020-07-30 | Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112002762A true CN112002762A (en) | 2020-11-27 |
| CN112002762B CN112002762B (en) | 2023-03-14 |
Family
ID=73463315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010750918.3A Active CN112002762B (en) | 2020-07-30 | 2020-07-30 | Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112002762B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116190424A (en) * | 2022-10-25 | 2023-05-30 | 北京超弦存储器研究院 | Semiconductor device and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235180A (en) * | 2003-01-28 | 2004-08-19 | Sanyo Electric Co Ltd | Semiconductor device and its manufacturing method |
| CN101630692A (en) * | 2008-07-14 | 2010-01-20 | 三星电子株式会社 | Channel layers and semiconductor devices including the same |
| KR20110087457A (en) * | 2010-01-26 | 2011-08-03 | 주성엔지니어링(주) | Semiconductor laminating structure and method of manufacturing the same, and thin film transistor having the same |
| CN102299182A (en) * | 2010-06-23 | 2011-12-28 | 周星工程股份有限公司 | Thin Film transistor and producing method thereof |
| CN105355663A (en) * | 2015-11-30 | 2016-02-24 | 武汉大学 | Hydrogen passivation zinc oxide-based double-channel film transistor and preparation method for the same |
| CN107104150A (en) * | 2017-05-02 | 2017-08-29 | 深圳市华星光电技术有限公司 | Metal oxide TFT devices and preparation method thereof |
| KR20180081694A (en) * | 2018-07-06 | 2018-07-17 | 주성엔지니어링(주) | Thin film transistor and manufacturing method thereof |
-
2020
- 2020-07-30 CN CN202010750918.3A patent/CN112002762B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235180A (en) * | 2003-01-28 | 2004-08-19 | Sanyo Electric Co Ltd | Semiconductor device and its manufacturing method |
| CN101630692A (en) * | 2008-07-14 | 2010-01-20 | 三星电子株式会社 | Channel layers and semiconductor devices including the same |
| KR20110087457A (en) * | 2010-01-26 | 2011-08-03 | 주성엔지니어링(주) | Semiconductor laminating structure and method of manufacturing the same, and thin film transistor having the same |
| CN102299182A (en) * | 2010-06-23 | 2011-12-28 | 周星工程股份有限公司 | Thin Film transistor and producing method thereof |
| CN105355663A (en) * | 2015-11-30 | 2016-02-24 | 武汉大学 | Hydrogen passivation zinc oxide-based double-channel film transistor and preparation method for the same |
| CN107104150A (en) * | 2017-05-02 | 2017-08-29 | 深圳市华星光电技术有限公司 | Metal oxide TFT devices and preparation method thereof |
| KR20180081694A (en) * | 2018-07-06 | 2018-07-17 | 주성엔지니어링(주) | Thin film transistor and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| PREETAM SINGH ET AL: "Effect of oxygen partial pressure on the structural and optical properties of sputter deposited ZnO nanocrystalline thin film", 《SCIENCEDIRECT》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116190424A (en) * | 2022-10-25 | 2023-05-30 | 北京超弦存储器研究院 | Semiconductor device and manufacturing method thereof |
| CN116190424B (en) * | 2022-10-25 | 2024-03-15 | 北京超弦存储器研究院 | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112002762B (en) | 2023-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102101605B1 (en) | Thin-film transistor | |
| KR101774520B1 (en) | Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors | |
| JP4982619B1 (en) | Manufacturing method of semiconductor element and manufacturing method of field effect transistor | |
| Lee et al. | P-channel tin monoxide thin film transistor fabricated by vacuum thermal evaporation | |
| Cai et al. | High-performance transparent AZO TFTs fabricated on glass substrate | |
| WO2011132418A1 (en) | Deposition method | |
| JP2015109315A (en) | Thin film transistor, manufacturing method of the same, oxide semiconductor layer, display device and semiconductor device | |
| US20140370653A1 (en) | Sputtering target and method for manufacturing semiconductor device | |
| Hwang et al. | Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor | |
| Li et al. | Performance improvement for solution-processed high-mobility ZnO thin-film transistors | |
| JP2012104809A (en) | Semiconductor thin film, thin-film transistor, and method for manufacturing the same | |
| WO2011143887A1 (en) | Metal oxide thin film transistor and manufacturing method thereof | |
| Tang et al. | Influence of Ga doping on electrical performance and stability of ZnO thin-film transistors prepared by atomic layer deposition | |
| WO2014125820A1 (en) | Thin film transistor | |
| JP5168599B2 (en) | Thin film transistor manufacturing method | |
| CN112002762B (en) | Gradient channel nitrogen-doped zinc oxide thin film transistor and preparation method thereof | |
| WO2023024116A1 (en) | Oxide semiconductor layer, thin film transistor and preparation method therefor, display panel, and display device | |
| JP2011258804A (en) | Field effect transistor and manufacturing method therefor | |
| CN107452810B (en) | Metal oxide thin film transistor and preparation method thereof | |
| TW201309826A (en) | Fabrication method for stannous oxide thin film | |
| CN109285893A (en) | A kind of homojunction thin film transistor (TFT) | |
| WO2018214480A1 (en) | Island-like electron-transmitting thin film transistor, and manufacturing method | |
| Shieh et al. | Fabrication of sol-gel-derived zinc oxide thin-film transistor | |
| Xu et al. | Back-Channel-Etched IGZO TFTs With Cu-Based Multilayer Electrodes Using MoAl Alloy and MoMn Alloy as Buffer Layers | |
| Lu et al. | Study on the Performance of Amorphous IGZO TFT Thin-Film Transistor with Ti/Au Stacking as the Source/Drain |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |