CN112002712A - Display panel, display device and manufacturing method - Google Patents
Display panel, display device and manufacturing method Download PDFInfo
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- CN112002712A CN112002712A CN202010858428.5A CN202010858428A CN112002712A CN 112002712 A CN112002712 A CN 112002712A CN 202010858428 A CN202010858428 A CN 202010858428A CN 112002712 A CN112002712 A CN 112002712A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The embodiment of the invention discloses a display panel, a display device and a manufacturing method. The display panel includes: the light-emitting device comprises a substrate, a metal mask layer, a driving circuit layer and a light-emitting element array which are sequentially stacked; the light emitting element array comprises a plurality of light emitting elements arranged in an array; the metal mask layer is provided with a plurality of first openings; the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements; the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side departing from the driving circuit layer; the light emitting element further includes a common auxiliary layer; the common auxiliary layer is provided with a plurality of second openings; the perpendicular projection of the second opening on the substrate overlaps the perpendicular projection of the first opening on the substrate. The technical scheme provided by the embodiment of the invention can avoid transverse leakage among the light-emitting elements and improve the problem of poor display of the light-emitting elements caused by surreptitious lighting.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel, a display device and a manufacturing method.
Background
With the development of display technology, Organic Light Emitting display panels (OLEDs) have become one of the mainstream display panels due to their advantages of low power consumption, fast response speed, high resolution, and the like.
At present, a light emitting element in an OLED generally includes a light emitting layer and a common auxiliary layer (exemplarily, an electron transport layer, a hole transport layer, etc.), the light emitting layers of the respective light emitting elements are independent of each other, and the common auxiliary layer is connected to each other. However, due to the electron-withdrawing property of the common layer, a lateral leakage current may be generated between the light emitting elements, which may cause the light emitting elements to be turned on and cause color crosstalk, and for example, when a red screen or a blue screen is displayed, the green light emitting element is in a weak light emitting state, which may affect the display effect.
Disclosure of Invention
The invention provides a display panel, a display device and a manufacturing method, which are used for avoiding transverse leakage among light-emitting elements, improving the problem of poor display of the light-emitting elements caused by surreptitious lighting and improving the display effect.
In a first aspect, an embodiment of the present invention provides a display panel, including:
the light-emitting device comprises a substrate, a metal mask layer, a driving circuit layer and a light-emitting element array which are sequentially stacked; the light emitting element array comprises a plurality of light emitting elements arranged in an array;
the metal mask layer is provided with a plurality of first openings;
the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements;
the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side of the light-emitting element, which is far away from the driving circuit layer; the light emitting element further includes a common auxiliary layer;
the common auxiliary layer has a plurality of second openings; the perpendicular projection of the second opening on the substrate overlaps with the perpendicular projection of the first opening on the substrate.
In a second aspect, an embodiment of the present invention further provides a display device, where the display device includes the display panel according to any embodiment of the present invention.
In a third aspect, an embodiment of the present invention further provides a method for manufacturing a display panel, where the method includes:
providing a substrate;
forming a metal mask layer on the substrate, wherein a plurality of first openings are formed in the metal mask layer;
sequentially forming a driving circuit layer and a light emitting element array on the metal mask layer; the light emitting element array comprises a plurality of light emitting elements arranged in an array; the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements; the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side of the light-emitting element, which is far away from the driving circuit layer; the light emitting element further includes a common auxiliary layer;
and carrying out laser irradiation treatment on one side of the substrate, which is far away from the metal mask layer, carrying out laser irradiation on the public auxiliary layer corresponding to the first opening through shielding of the metal mask layer, forming a second opening on the public auxiliary layer, wherein the vertical projection of the second opening on the substrate is overlapped with the vertical projection of the first opening on the substrate.
According to the display panel provided by the embodiment of the invention, the metal mask layer with the first opening is arranged, and the common auxiliary layer is patterned by taking the mask layer as the mask plate, so that the common auxiliary layer is provided with the plurality of second openings.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view along AA';
FIG. 5 is another cross-sectional view taken along direction AA';
FIG. 6 is a further cross-sectional view along AA';
FIG. 7 is a further cross-sectional view taken along direction AA';
FIG. 8 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 10 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 12 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 13 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention;
fig. 14 is a schematic structural diagram illustrating a metal mask layer formed according to an embodiment of the present invention;
fig. 15 is a schematic view of a laser irradiation process performed on a side of a substrate away from a metal mask layer according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In view of the problems described in the background, an embodiment of the present invention provides a display panel, including:
the light-emitting device comprises a substrate, a metal mask layer, a driving circuit layer and a light-emitting element array which are sequentially stacked; the light emitting element array comprises a plurality of light emitting elements arranged in an array;
the metal mask layer is provided with a plurality of first openings;
the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements;
the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side departing from the driving circuit layer; the light emitting element further includes a common auxiliary layer;
the common auxiliary layer is provided with a plurality of second openings; the perpendicular projection of the second opening on the substrate overlaps the perpendicular projection of the first opening on the substrate.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention. Fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention. FIG. 4 is a cross-sectional view along AA'. Referring to fig. 1 to 4, the display panel includes: a substrate 10, a metal mask layer 20, a driving circuit layer 30, and a light emitting element array 40, which are sequentially stacked; the light emitting element array 40 includes a plurality of light emitting elements 410 arranged in an array; the metal mask layer 20 is provided with a plurality of first openings 210; the perpendicular projection of the first opening 210 on the substrate 10 is located between the adjacent light emitting elements 410; the light-emitting element 410 includes a first electrode 411, a light-emitting layer 413, and a second electrode 414 which are provided in this order on a side away from the driving circuit layer 30; the light emitting element 410 further includes a common auxiliary layer 412; the common auxiliary layer 412 has a plurality of second openings 4121; the perpendicular projection of the second opening 4121 on the substrate 10 overlaps the perpendicular projection of the first opening 210 on the substrate 10.
Specifically, the substrate 10 is used to support a film layer formed on one side thereof. The substrate 10 may be a rigid substrate, the material of the substrate 10 is glass, the substrate 10 may also be a flexible substrate, and the material of the substrate 10 may include one or more combinations of polyether sulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and polymer resin of cellulose acetate propionate, for example. Here, the material of the substrate 10 is not limited.
Specifically, the driving circuit layer 30 includes a plurality of pixel driving circuits 310 for driving the light emitting elements 410, each pixel driving circuit 310 includes at least one thin film transistor T, and the structure of the thin film transistor T may be a top gate structure or a bottom gate structure. Here, the structure of the thin film transistor T is not limited. For example, as shown in fig. 3, if the structure of the thin film transistor T is a top gate structure, the driving circuit layer 30 includes an active layer 31, a first insulating layer, a gate metal layer 32, a second insulating layer, and a source-drain metal layer 33, which are sequentially stacked along a direction pointing to the metal mask layer 20 from the substrate 10, where a channel of the thin film transistor T is located in the active layer 31, a gate of the thin film transistor T is located in the gate layer, and a source and a drain of the thin film transistor T are located in the source-drain metal layer 33. Optionally, a second planarization layer 52 for planarization may be further disposed on a side of the driving circuit layer 30 facing away from the substrate 10.
Specifically, the metal mask layer 20 is opaque, and the material of the metal mask layer 20 may exemplarily include at least one of molybdenum and silver, and the material of the metal mask layer 20 is not limited herein. Optionally, the metal mask layer 20 is located on one side of the driving circuit layer 30 facing the substrate 10, and if the structure of the thin film transistor T in the driving circuit layer 30 is a top gate structure (as shown in fig. 3), the metal mask layer 20 is located on one side of the active layer 31 facing the substrate 10; if the structure of the thin film transistor T in the driving circuit layer 30 is a bottom gate structure, the metal mask layer 20 is located on the side of the gate metal layer 32 facing the substrate 10. Thus, the influence of the metal mask layer 20 on the driving circuit layer 30 can be avoided. Optionally, the side of the metal mask layer 20 facing away from the substrate 10 may be further provided with a first planarization layer 51 for planarization.
Specifically, the plurality of light emitting elements 410 may be arranged in various ways, and for example, the light emitting element array 40 may include a plurality of light emitting element columns arranged along a first direction X and extending along a second direction Y, where the first direction X and the second direction Y intersect. Any two light emitting element columns may be arranged to be aligned in the first direction X (as shown in fig. 2 and 3), and all the light emitting element columns of the odd columns may be arranged to be aligned in the first direction X, and all the light emitting element columns of the even columns may be aligned in the first direction X, but the light emitting element columns of the odd columns and the light emitting element columns of the even columns are offset in the first direction X (as shown in fig. 1). Here, the arrangement of the plurality of light emitting elements 410 is not limited.
Specifically, the light emitting element 410 emits light in the following principle: when no voltage is applied to the first electrode 411 and the second electrode 414, the light-emitting element 410 does not emit light, and when a voltage is applied to the first electrode 411 and the second electrode 414, the first electrode 411 injects holes into the light-emitting layer 413, the second electrode 414 injects electrons into the light-emitting layer 413, and the holes and the electrons are recombined in the light-emitting layer 413 to form excitons, which emit light by radiation. It should be noted that fig. 1-3 only exemplarily show that the light emitting element 410 includes a red light emitting element, a green light emitting element, and a blue light emitting element, but the present application is not limited thereto, and a person skilled in the art may set the light emitting color of the light emitting element 410 according to practical situations, and exemplarily, the light emitting element 410 may include a magenta light emitting element 410, a yellow light emitting element 410, a cyan light emitting element 410, or the like in other embodiments.
Specifically, the common auxiliary layer 412 is used to promote the recombination of electrons and holes in the light emitting layer 413, so as to improve the light emitting efficiency of the light emitting element 410, wherein there are various implementations of the specific position of the common auxiliary layer 412 in the light emitting element 410, which will be described in detail later and will not be described herein. The common auxiliary layer 412 is provided with a plurality of second openings 4121, which can be understood as providing a plurality of second openings 4121 on the entire common auxiliary layer 412, and the orthographic projection of the second openings 4121 on the substrate 10 is located between the adjacent light emitting elements 410. There are various specific ways of forming the second opening 4121, for example, by irradiating laser to the side of the substrate 10 where the metal mask layer 20 is not disposed, the portion of the entire common auxiliary layer 412 that is shielded by the metal mask layer 20 is not irradiated by the laser, and the portion of the entire common auxiliary layer 412 that is not shielded by the metal mask layer 20 (i.e., the portion facing the first opening 210) can be irradiated by the laser, and the portion is removed by the laser to form the second opening 4121.
It should be noted that, a person skilled in the art may select a wavelength of the laser according to a material used for each film layer in the display panel, so that the laser may not damage other film layers in the display panel when removing the common auxiliary layer 412, and for example, the laser may select a laser with a wavelength of 1054-1074 nm. It should be noted that, when the second opening 4121 is formed by laser etching the common auxiliary layer 412 using the metal mask layer 20 as a mask, theoretically, the sizes of the first opening 210 and the second opening 4121 are the same, and actually, due to diffraction of light, the sizes of the first opening 210 and the second opening 4121 may be different, but since the difference is smaller, the sizes of the first opening 210 and the second opening 4121 are approximately the same.
Specifically, the second opening 4121 may extend along the first direction X (as shown in fig. 3) or along the second direction Y (as shown in fig. 1 and 2), but the present invention is not limited thereto, and for example, in other embodiments, the extending direction of the second opening 4121 may also have a preset included angle with the first direction X (or the second direction Y) that is a small angle, that is, the extending direction of the second opening 4121 is slightly inclined with respect to the first direction X (or the second direction Y). The extending directions of the second openings 4121 in the common auxiliary layer 412 may be the same (as shown in fig. 1-3), or the second openings 4121 in the common auxiliary layer 412 including at least two extending directions may be provided, which is not limited herein and can be set by one skilled in the art according to the actual situation. In addition, when the second opening 4121 extends along the first direction X, the length of the second opening 4121 along the first direction X may be equal to the length of the light emitting element 410 along the first direction X, or may be greater than the length of the light emitting element 410 along the first direction X (as shown in fig. 3), which is not limited herein and can be set by one skilled in the art according to practical situations. Similarly, when the second opening 4121 extends along the second direction Y, the length of the second opening 4121 along the second direction Y may be equal to the length of the light emitting element 410 along the second direction Y (as shown in fig. 1 and 2), or may be greater than the length of the light emitting element 410 along the second direction Y, which is not limited herein and can be set by one skilled in the art according to practical situations.
It should be noted that fig. 1-3 only illustrate the second opening 4121 between some adjacent light emitting elements 410, but the present application is not limited thereto, and those skilled in the art can set which adjacent light emitting elements 410 have the second opening 4121 therebetween according to practical situations.
It can be understood that the second opening 4121 can block the common auxiliary layer 412 of the light emitting elements 410 at both sides of the second opening 4121 at the second opening 4121, and the lateral leakage flow cannot cross the second opening 4121 from the light emitting elements 410 at one side of the second opening 4121 to the light emitting elements 410 at the other side of the second opening 4121, so that the second opening 4121 can extend or completely block the flow path of the lateral leakage flow, thereby improving the problem of the light emitting element being stolen due to the lateral leakage flow. It should be noted that whether the second opening 4121 specifically functions to extend the flow path of the lateral leakage flow or completely block the flow path of the lateral leakage flow is related to the specific implementation of the second opening 4121, which will be described in detail later and will not be described here.
It can also be understood that, compared with a method of forming the common auxiliary layer 412 by evaporating a common auxiliary layer material through a mask, the technical solution provided by the embodiment of the present invention is not limited by the size of the mask, specifically, the mask includes an opening region and a shielding region, when evaporating the common auxiliary layer material, the opening region of the mask can penetrate through the common auxiliary layer material, and the shielding region of the mask blocks the common auxiliary layer material, so that the common auxiliary layer material can be evaporated at a position corresponding to the opening region, and the common auxiliary layer material cannot be evaporated at a position corresponding to the shielding region, so that the second opening 4121 can be formed. Those skilled in the art will appreciate that, due to the manufacturing process of the mask, the distance between adjacent opening regions in the mask is usually greater than 20um, and the distance between adjacent light emitting elements 410 in most display panels is usually about 18um at present, and the method of evaporating the common auxiliary layer 412 by using the mask may cause the defect of the common auxiliary layer 412 in the corresponding region of the light emitting element 410, which affects the display. However, in the embodiment of the invention, the metal mask layer with the first opening 210 is used as a mask, and the second opening 4121 is formed by etching the common auxiliary layer 412, so that the vertical projection of the second opening 4121 on the substrate does not overlap with the vertical projection of the light emitting element 410 on the substrate. Thus, the common auxiliary layer 412 in the light emitting device 410 can be prevented from being damaged, and the normal light emission of the light emitting device 410 can be prevented from being influenced, thereby improving the display quality of the display panel.
Optionally, the width D of the first opening 210 and the width D of the second opening 4121 are smaller than the gap distance D between two adjacent light emitting elements 410 along the line direction of two adjacent light emitting elements 410.
Specifically, the person skilled in the art may set the specific values of the widths of the first opening 210 and the second opening 4121 according to practical situations, and is not limited herein. Illustratively, the minimum width of the first opening 210 in the metal mask layer can be achieved based on the current photolithography process
Left and right, the width D of the second opening 4121 in the common auxiliary layer 412 can be made the smallest
Left and right, therefore, the first opening 210 and the second opening 4121 may be provided with widths greater than those of the first opening 210 and the second opening 4121
And is smaller than the gap distance d between two adjacent light emitting elements 410. Optionally, the width D of the second opening 4121 is greater than or equal to 2um and smaller than the gap distance D between two adjacent light emitting elements 410. Thus, the second opening 4121 can be prevented from damaging the common auxiliary layer 412 in the corresponding region of the light emitting device 410, and the second opening 4121 can be prevented from being wideToo narrow leads to the problem that the common auxiliary layer 412 is not completely disconnected at the position of the second opening 4121.
Optionally, the distance between the edge of the first opening 210 and the edge of the adjacent light emitting element 410 is greater than or equal to 3 um. Thus, the problem that the second opening 4121 damages the common auxiliary layer 412 in the corresponding region of the light emitting device 410 due to process fluctuation when the second opening 4121 is formed can be prevented, i.e., the problem that the vertical projection of the second opening 4121 on the substrate overlaps the vertical projection of the light emitting device 410 on the substrate can be avoided, and the light emitting device 410 can normally emit light.
According to the display panel provided by the embodiment of the invention, the metal mask layer with the first opening is arranged, and the common auxiliary layer is patterned by taking the mask layer as the mask plate, so that the common auxiliary layer is provided with the plurality of second openings.
Specifically, there are various specific positions and specific implementation forms of the common auxiliary layer 412, and the following description is given with reference to a typical example, but the present application is not limited thereto.
With continued reference to fig. 4, optionally, the common auxiliary layer 412 includes a first common auxiliary layer 412A between the first electrode 411 and the light emitting layer 413.
Alternatively, the first common auxiliary layer 412A may include any one of a hole injection layer, a hole transport layer, and an electron blocking layer. Illustratively, in a direction in which the substrate 10 points to the metal light shielding layer, the first common auxiliary layer 412A sequentially includes a hole injection layer, a hole transport layer and an electron blocking layer, wherein the hole injection layer is used to increase the number of holes entering the hole transport layer, the hole transport layer is used to increase the speed of transporting holes to the light emitting layer 413, and the electron blocking layer is used to block electrons from moving to the first electrode 411, so that the electrons are located in the light emitting layer 413, thereby increasing the probability of recombination of the electrons and the holes.
FIG. 5 is another cross-sectional view along direction AA'. Referring to fig. 5, optionally, the common auxiliary layer 412 includes a second common auxiliary layer 412B between the light emitting layer 413 and the second electrode 414.
Alternatively, the second common auxiliary layer 412B may include any one of an electron injection layer, an electron transport layer, and a hole blocking layer. Illustratively, in a direction in which the substrate 10 points to the metal light shielding layer, the second common auxiliary layer 412B sequentially includes an electron injection layer, an electron transport layer and a hole blocking layer, wherein the electron injection layer is used to increase the number of electrons entering the electron transport layer, the electron transport layer is used to increase the speed of transporting electrons to the light emitting layer 413, and the hole blocking layer is used to block holes from moving to the second electrode 414, so that the holes are located in the light emitting layer 413, thereby increasing the probability of recombination of the electrons and the holes.
FIG. 6 is a further cross-sectional view along AA'. Referring to fig. 6, alternatively, the common auxiliary layer 412 includes a first common auxiliary layer 412A between the first electrode 411 and the light emitting layer 413 and a second common auxiliary layer 412B between the light emitting layer 413 and the second electrode 414.
Alternatively, the first common auxiliary layer 412A may include any one of a hole injection layer, a hole transport layer, and an electron blocking layer. Alternatively, the second common auxiliary layer 412B may include any one of an electron injection layer, an electron transport layer, and a hole blocking layer.
Fig. 7 is a further sectional view along the direction AA'. Referring to fig. 7, the common auxiliary layer 412 may optionally include at least one of a hole injection layer 4122, a hole transport layer 4123, an electron blocking layer 4124, a hole blocking layer 4125, an electron transport layer 4126, and an electron injection layer 4127.
Illustratively, as shown in fig. 7, the common auxiliary layer 412 includes a hole injection layer 4122, a hole transport layer 4123, an electron blocking layer 4124, a hole blocking layer 4125, an electron transport layer 4126, and an electron injection layer 4127.
Specifically, there are various specific implementation forms of the first opening 210 and the second opening 4121, and a typical example will be described below, but the present application is not limited thereto.
Fig. 8 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 8, alternatively, a plurality of light emitting elements 410 are arranged in rows and columns, the light emitting elements 410 in the same light emitting element column emit light of the same color, the light emitting elements in adjacent light emitting element columns emit light of different colors, and the vertical projection of the first opening 210 on the substrate 10 is located between the adjacent light emitting elements 410; the common auxiliary layer 412 is provided with second openings 4121 between adjacent light emitting element columns. With continued reference to fig. 3, optionally, a plurality of light emitting elements 410 are arranged in rows and columns, the light emitting elements 410 in the same light emitting element row emit light of the same color, the light emitting colors of adjacent light emitting element rows are different, and the vertical projection of the first opening 210 on the substrate 10 is located between the adjacent light emitting elements 410; the common auxiliary layer 412 is provided with second openings 4121 between adjacent light emitting element rows.
It can be understood that the light emitting element stealing due to the lateral leakage current between the adjacent light emitting elements with different light emitting colors is relatively serious, and therefore, the problem of the light emitting element stealing due to the lateral leakage current can be effectively improved by disconnecting the common auxiliary layer 412 between the adjacent light emitting element 410 columns (or light emitting element 410 rows) with different light emitting colors.
Fig. 9 is a schematic structural diagram of a display panel according to an embodiment of the present invention. Fig. 10 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Fig. 11 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 9-11, alternatively, the perpendicular projection of the first opening 210 on the substrate 10 is located between adjacent light emitting elements 410; the common auxiliary layer 412 is provided with a second opening 4121 between any adjacent light emitting elements 410.
It can be understood that by disposing the common auxiliary layer 412 between any two adjacent light emitting elements 410 and disposing the second opening 4121, the problem of light emitting element pilfering caused by lateral leakage current between any two adjacent light emitting elements 410 can be improved, and the display effect can be further improved.
It will also be appreciated that if the second opening 4121 fails to completely block the common auxiliary layer 412 between one light emitting element 410 and the light emitting element 410 adjacent thereto (as shown in fig. 9), i.e., the lateral leakage flow can flow from one light emitting element 410 to the light emitting element 410 adjacent to the light emitting element 410 by bypassing the second opening 4121, the second opening 4121 functions to extend the flow path of the lateral leakage flow; if the second opening 4121 can completely block the common auxiliary layer 412 between one light emitting device 410 and the adjacent light emitting device 410 (as shown in fig. 10 and 11), the second opening 4121 can completely block the flow path of the lateral leakage current, thereby improving the light emitting device lighting problem to the maximum extent.
With continued reference to fig. 1-3 and 8-10, the first opening 210 and the second opening 4121 may alternatively have a straight line shape (as shown in fig. 1 and 10), a wave shape (as shown in fig. 8 and 9) or a zigzag shape (as shown in fig. 2 and 3) in vertical projection onto the substrate 10.
Preferably, the vertical projection of the first opening 210 and the second opening 4121 on the substrate 10 is wave-shaped and zigzag-shaped. It will be appreciated that the wavy and jagged edges can be broken down into two directions, and thus, the stress in both directions can be relieved, thereby reducing the stress of the common auxiliary layer 412 after being cut off.
With continued reference to fig. 10, optionally, the vertical projections of the plurality of first openings 210 on the metal mask layer 20 on the substrate 10 are in a grid shape; the plurality of second openings 4121 of the common auxiliary layer 412 are in a grid shape in a vertical projection on the substrate 10.
Specifically, the grid-shaped second openings 4121 divide the entire common auxiliary layer into a plurality of independent common auxiliary blocks, each common auxiliary block corresponds to at least one light emitting element 40, and fig. 10 exemplarily illustrates that each common auxiliary block corresponds to one light emitting element 40, but not limited thereto, and in other embodiments, each common auxiliary block may also correspond to a plurality of light emitting elements 40.
It can be understood that by providing the plurality of second openings 4121 of the common auxiliary layer 412 in a grid-like vertical projection on the substrate 10, the lateral leakage current between the light emitting elements corresponding to different common auxiliary blocks can be completely intercepted by the second openings 4121 and cannot bypass the second openings 412, thus improving the ability of the second openings 4121 to block the lateral leakage current. It will also be appreciated that when each common auxiliary block corresponds to a light emitting element 40 (as shown in fig. 10), the second opening 412 can block lateral leakage between any two adjacent light emitting elements, solving the problem of light emitting element sneaking.
With continued reference to fig. 11, optionally, the vertical projections of the first opening 210 and the second opening 4121 on the substrate 10 both surround the light emitting element 410.
It will be appreciated that the second opening 4121 may completely block the lateral leakage flow path between the light emitting element 410 and the other light emitting elements 410 around it, thus improving the ability of the second opening 4121 to block the lateral leakage flow. It will also be appreciated that when the vertical projection of each light-emitting element 40 (shown in fig. 10) onto the substrate 10 is surrounded by the vertical projection of the second opening 4121 onto the substrate 10 (shown in fig. 11), the second opening 412 can block the lateral leakage current between any two adjacent light-emitting elements, thereby solving the problem of light-emitting element surging.
Fig. 12 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 12, optionally, the driving circuit layer 30 includes a plurality of pixel driving circuits 310; the plurality of pixel driving circuits 310 are electrically connected to the plurality of light emitting elements 410 in a one-to-one correspondence; the vertical projection of the pixel driving circuit 310 on the substrate 10 does not overlap the vertical projection of the first opening 210 on the substrate 10.
Specifically, the pixel driving circuit 310 generally includes a plurality of circuit elements, such as exemplary thin film transistors, capacitors, and the like, and the circuit elements in the pixel driving circuit 310 are arranged more densely. The driving circuit layer 30 further includes a plurality of traces located between adjacent light emitting elements, where the exemplary SCAN lines SCAN, the DATA lines DATA, the power lines, and the like are relatively sparse compared to the arrangement density of the circuit elements in the pixel driving circuit 310, and therefore, the vertical projection of the pixel driving circuit 310 on the substrate 10 and the vertical projection of the first opening 210 on the substrate 10 are not overlapped, so as to improve the penetration rate of laser, and further improve the effective utilization rate of laser, and fuse the common auxiliary layer 412 with laser with smaller power more easily.
Optionally, the metal mask layer 20 is reused as a light shielding layer of the driving circuit layer 30.
Specifically, the pixel driving circuit 310 includes at least one thin film transistor T, and a vertical projection of the metal mask layer 20 on the substrate 10 covers a vertical projection of the thin film transistor T on the substrate 10. Thus, the metal mask layer 20 can prevent the channel layer of the thin film transistor T from receiving the light-induced degradation effect. It can be understood that the metal mask layer 20 is reused as the light shielding layer, which can reduce the process of the display panel, reduce the cost, and facilitate the realization of the thinning of the display panel.
Based on the above inventive concept, an embodiment of the present invention further provides a manufacturing method of a display panel, and fig. 13 is a flowchart of the manufacturing method of the display panel according to the embodiment of the present invention. Referring to fig. 13, the method specifically includes the following steps:
s110, providing a substrate.
Specifically, the substrate is used to support a film layer formed on one side thereof. The substrate may be a rigid substrate, exemplary materials of the substrate are glass, the substrate may also be a flexible substrate, and exemplary materials of the substrate may include one or a combination of more of polyether sulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and a polymer resin of cellulose acetate propionate. Here, the material of the substrate is not limited.
And S120, forming a metal mask layer on the substrate, wherein a plurality of first openings are formed in the metal mask layer.
Specifically, the material of the metal mask layer may exemplarily include at least one of molybdenum and silver, and the metal mask layer may be formed by physical vapor deposition, chemical vapor deposition, inkjet printing, or other film forming means known to those skilled in the art, and the first opening is formed by etching. Here, the material and the manufacturing process of the metal mask layer are not limited. For example, fig. 14 is a schematic structural diagram of a metal mask layer formed according to an embodiment of the present invention.
S130, sequentially forming a driving circuit layer and a light emitting element array on the metal mask layer, wherein the light emitting element array comprises a plurality of light emitting elements arranged in an array; the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements; the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side departing from the driving circuit layer; the light emitting element further includes a common auxiliary layer.
Specifically, the forming of the driving circuit layer may specifically include: an active layer, a first insulating layer, a grid metal layer, a second insulating layer and a source drain metal layer are sequentially formed, so that the thin film transistor in the driving circuit layer is of a top grid structure. The forming of the driving circuit layer may further include: and sequentially forming a gate metal layer, a first insulating layer, an active layer, a second insulating layer and a source drain metal layer, so that the thin film transistor in the driving circuit layer is of a bottom gate structure. Optionally, a first planarization layer may be formed before the driving circuit layer is formed. Optionally, a second planarization layer may be formed after the driving circuit layer is formed. The material of the active layer may include monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon or the like, the material of the gate metal layer may include molybdenum or the like, the material of the source drain metal layer may include molybdenum aluminum molybdenum or the like, and the material of the first insulating layer and the second insulating layer may include silicon oxide, silicon nitride or the like. The material of the first and second planarizing layers may include polyimide, polyethylene terephthalate, polycarbonate, polyethylene, or polyacrylate, etc. The formation method of each film layer in the driving circuit layer may be physical vapor deposition, chemical vapor deposition, inkjet printing, or other film forming methods known to those skilled in the art, and here, the material and the preparation process of each film layer in the driving circuit layer are not limited.
Specifically, forming the light emitting element array may specifically include: the method comprises the steps of sequentially forming a first electrode layer, a pixel limiting layer, a light emitting layer array and a second electrode layer, and further comprises the step of forming a common auxiliary layer. The material of the first electrode and the second electrode may include any one or a combination of two or more of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), Al, Ag, Mg, or the like, the light emitting layer may include at least one of a red light emitting layer, a green light emitting layer, a blue light emitting layer, a cyan light emitting layer, a yellow light emitting layer, a magenta light emitting layer, or the like, and the pixel defining layer may include polyimide, polyethylene terephthalate, polycarbonate, polyethylene, polyacrylate, or the like. The film formation methods of the first electrode layer and the second electrode layer may be evaporation, sputtering or other film formation methods known to those skilled in the art, the film formation method of the light emitting layer array may be evaporation or other film formation methods known to those skilled in the art, and the formation method of the pixel defining layer may be physical vapor deposition, chemical vapor deposition, inkjet printing or other film formation methods known to those skilled in the art, where the material and the preparation process of each film layer in the light emitting element array are not limited.
Optionally, the common auxiliary layer includes a first common auxiliary layer between the first electrode and the light emitting layer, as shown in fig. 4.
Optionally, the common auxiliary layer includes a second common auxiliary layer between the light emitting layer and the second electrode, as shown in fig. 5.
Alternatively, the common auxiliary layer includes a first common auxiliary layer between the first electrode and the light emitting layer and a second common auxiliary layer between the light emitting layer and the second electrode, as shown in fig. 6.
Optionally, the common auxiliary layer includes at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
Exemplary materials for the hole injection layer may include HATCN (Dipyrazino [2, 3-f: 2 ', 3' -h ] quinoxaline-2, 3, 6, 7, 10, 11-hexacarbonile; 2, 3, 6, 7, 10, 11-hexacyano-1, 4, 5, 8, 9, 12-hexaazatriphenylene), and the like. The material of the hole transport layer may include NPB (N, N '-bis (phenyl-1-yl) -N, N' -bis (phenyl) -benzidine; N, N '-diphenyl-N, N' - (1-naphthyl) -1, 1 '-biphenyl-4, 4' -diamine (123847-85-8)), and the like. The material of the electron blocking layer may include Ir (ppz)3(Tris (phenylpyrazole) iridium; tris (1-ylpyrazole) iridium) and the like. The material of the hole blocking layer may include BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline; 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), etc. The material of the electron transport layer may include Bphen (4, 7-diphenyl-1, 10-phenanthroline; 4, 7-diphenyl phenanthroline), etc. The material of the electron injection layer includes LiF, etc. The film forming method of the common auxiliary layer may be evaporation or other film forming methods known to those skilled in the art, and the material and the preparation process of the common auxiliary layer are not limited herein.
And S140, performing laser irradiation treatment on one side of the substrate, which is far away from the metal mask layer, performing laser irradiation on the common auxiliary layer corresponding to the first opening through shielding of the metal mask layer, forming a second opening on the common auxiliary layer, wherein the vertical projection of the second opening on the substrate is overlapped with the vertical projection of the first opening on the substrate.
For example, fig. 15 is a schematic view of performing laser irradiation processing on a side of the substrate away from the metal mask layer according to an embodiment of the present invention. Specifically, the specific wavelength of the laser may be set by a person skilled in the art according to the material used for each film layer in the display panel, and is not limited herein as long as the common auxiliary layer is fused without damaging other film layers in the display panel.
Alternatively, the vertical projection of the first opening and the second opening on the substrate is linear (as shown in fig. 1, 10 and 12), wavy (as shown in fig. 8 and 9) or zigzag (as shown in fig. 2 and 3).
Optionally, vertical projections of the plurality of first openings on the metal mask layer on the substrate are in a grid shape; the plurality of second openings on the common auxiliary layer are in a grid shape in vertical projection on the substrate, as shown in fig. 12.
Optionally, the perpendicular projection of the first opening on the substrate is located between adjacent light emitting elements; the common auxiliary layer is provided with second openings between any adjacent light emitting elements, as shown in fig. 9 to 11.
Alternatively, the vertical projections of the first opening and the second opening on the substrate surround the light emitting element, as shown in fig. 11.
Optionally, the driving circuit layer includes a plurality of pixel driving circuits; the pixel driving circuits are electrically connected with the light-emitting elements in a one-to-one correspondence manner; the vertical projection of the pixel driving circuit on the substrate does not overlap the vertical projection of the first opening on the substrate, as shown in fig. 12.
Based on the above inventive concept, the embodiment of the invention also provides a display device. The display device comprises the display panel according to any of the embodiments of the present invention. Therefore, the display device has the advantages of the display panel provided by the embodiment of the invention, and the same points can be understood by referring to the above description, which is not repeated herein.
For example, fig. 16 is a schematic structural diagram of a display device according to an embodiment of the present invention. As shown in fig. 16, a display device 200 according to an embodiment of the present invention includes the display panel 100 according to an embodiment of the present invention. The display device 200 may be exemplified by any electronic device with a display function, such as a touch display screen, a mobile phone, a tablet computer, a notebook computer, or a television.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (16)
1. A display panel, comprising:
the light-emitting device comprises a substrate, a metal mask layer, a driving circuit layer and a light-emitting element array which are sequentially stacked; the light emitting element array comprises a plurality of light emitting elements arranged in an array;
the metal mask layer is provided with a plurality of first openings;
the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements;
the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side of the light-emitting element, which is far away from the driving circuit layer; the light emitting element further includes a common auxiliary layer;
the common auxiliary layer has a plurality of second openings; the perpendicular projection of the second opening on the substrate overlaps with the perpendicular projection of the first opening on the substrate.
2. The display panel according to claim 1, wherein the common auxiliary layer comprises a first common auxiliary layer between the first electrode and the light-emitting layer.
3. The display panel according to claim 1, wherein the common auxiliary layer comprises a second common auxiliary layer between the light-emitting layer and the second electrode.
4. The display panel according to claim 1, wherein the common auxiliary layer comprises a first common auxiliary layer between the first electrode and the light-emitting layer and a second common auxiliary layer between the light-emitting layer and the second electrode.
5. The display panel according to claim 1, wherein the common auxiliary layer comprises at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
6. The display panel according to claim 1, wherein a vertical projection of the first opening and the second opening on the substrate is linear, wavy or zigzag.
7. The display panel according to claim 1, wherein a vertical projection of the plurality of first openings on the metal mask layer on the substrate is in a grid shape; the vertical projection of the second openings on the common auxiliary layer on the substrate is in a grid shape.
8. The display panel according to claim 1, wherein a perpendicular projection of the first opening on the substrate is located between adjacent light emitting elements; the common auxiliary layer is provided with the second openings between any adjacent light emitting elements.
9. The display panel according to claim 1, wherein vertical projections of the first opening and the second opening on the substrate each surround the light-emitting element.
10. The display panel according to claim 1, wherein a width of the first opening and the second opening is smaller than a gap distance between two adjacent light emitting elements in a direction of a line connecting the two adjacent light emitting elements.
11. The display panel according to claim 1, wherein a distance between an edge of the first opening and an edge of the adjacent light-emitting element is 3um or more.
12. The display panel according to claim 1, wherein the driving circuit layer includes a plurality of pixel driving circuits; the pixel driving circuits are electrically connected with the light-emitting elements in a one-to-one correspondence manner;
the vertical projection of the pixel driving circuit on the substrate is not overlapped with the vertical projection of the first opening on the substrate.
13. The display panel according to claim 1, wherein the metal mask layer is multiplexed as a light-shielding layer of the driving circuit layer.
14. A display device characterized by comprising the display panel according to any one of claims 1 to 13.
15. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a substrate;
forming a metal mask layer on the substrate, wherein a plurality of first openings are formed in the metal mask layer;
sequentially forming a driving circuit layer and a light emitting element array on the metal mask layer; the light emitting element array comprises a plurality of light emitting elements arranged in an array; the vertical projection of the first opening on the substrate is positioned between the adjacent light-emitting elements; the light-emitting element comprises a first electrode, a light-emitting layer and a second electrode which are sequentially arranged on one side of the light-emitting element, which is far away from the driving circuit layer; the array of light emitting elements further comprises a common auxiliary layer;
and carrying out laser irradiation treatment on one side of the substrate, which is far away from the metal mask layer, carrying out laser irradiation on the public auxiliary layer corresponding to the first opening through shielding of the metal mask layer, forming a second opening on the public auxiliary layer, wherein the vertical projection of the second opening on the substrate is overlapped with the vertical projection of the first opening on the substrate.
16. The method of claim 15, wherein the common auxiliary layer comprises a first common auxiliary layer between the first electrode and the light emitting layer and a second common auxiliary layer between the light emitting layer and the second electrode.
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| CN113299859A (en) * | 2021-05-24 | 2021-08-24 | 合肥维信诺科技有限公司 | Display panel, display panel preparation method and display device |
| CN113327934A (en) * | 2021-05-21 | 2021-08-31 | 合肥维信诺科技有限公司 | Mask, display panel and preparation method thereof |
| CN114300631A (en) * | 2021-12-29 | 2022-04-08 | 北京维信诺科技有限公司 | Display substrate, display panel and manufacturing method of display substrate |
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| WO2022110238A1 (en) * | 2020-11-30 | 2022-06-02 | 京东方科技集团股份有限公司 | Light-emitting substrate and display apparatus |
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| Publication number | Publication date |
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| CN115295561A (en) | 2022-11-04 |
| CN112002712B (en) | 2022-09-16 |
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