CN111987085B - Sensor, preparation method of sensor and electronic equipment - Google Patents
Sensor, preparation method of sensor and electronic equipment Download PDFInfo
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- CN111987085B CN111987085B CN202010849808.2A CN202010849808A CN111987085B CN 111987085 B CN111987085 B CN 111987085B CN 202010849808 A CN202010849808 A CN 202010849808A CN 111987085 B CN111987085 B CN 111987085B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
Abstract
The embodiment of the invention discloses a sensor, a preparation method of the sensor and electronic equipment. The sensor includes: the substrate comprises a sensor area, a transfer terminal area and a pad area; the sensor group is positioned on one side of the substrate; the sensor group comprises a plurality of sensors positioned in the sensor area; the switching structure group, the switching wire group and the pad group are all positioned on the same side of the substrate base plate as the sensor group, and the switching wire group is deposited on one side of the substrate base plate; the transfer structure group comprises a plurality of wires and a plurality of transfer terminals positioned in a transfer terminal area, the transfer line group comprises a plurality of transfer lines, and the pad group comprises a plurality of pads positioned in a pad area; the sensor is electrically connected with the switching terminal through the wiring, and the switching terminal is electrically connected with the bonding pad through the switching line. The technical scheme provided by the embodiment of the invention can form the patch cord in a deposition mode to replace a gold wire in the prior art, so that the process flow is simple and the cost is low.
Description
Technical Field
The embodiment of the invention relates to the technical field of sensors, in particular to a sensor, a preparation method of the sensor and electronic equipment.
Background
The sensor is a detection device which can sense the measured information and convert the sensed information into an electric signal or other information in a required form according to a certain rule to output so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
In the conventional semiconductor manufacturing process, when a sensor is packaged, a professional semiconductor manufacturing equipment is usually required to adopt an etching method, and a gold wire is used for leading out an electrode of the sensor for voltage test and other tests.
Disclosure of Invention
The invention provides a sensor, a preparation method of the sensor and electronic equipment, which are used for simplifying the process flow and reducing the cost.
In a first aspect, an embodiment of the present invention provides a sensor, including:
the substrate comprises a sensor area, a transfer terminal area and a pad area;
the sensor group is positioned on one side of the substrate base plate; the sensor group comprises a plurality of sensors located in the sensor area;
the switching structure group, the switching wire group and the welding pad group are all positioned on the same side of the substrate base plate as the sensor group, and the switching wire group is deposited on one side of the substrate base plate; the switching structure group comprises a plurality of wires and a plurality of switching terminals positioned in the switching terminal area, the switching wire group comprises a plurality of switching wires, and the welding pad group comprises a plurality of welding pads positioned in the welding pad area; the sensor is electrically connected with the switching terminal through the wiring, and the switching terminal is electrically connected with the bonding pad through the switching wire.
In a second aspect, an embodiment of the present invention further provides an electronic device, where the electronic device includes: the sensor of the first aspect.
In a third aspect, an embodiment of the present invention further provides a method for manufacturing a sensor, where the method includes:
providing a substrate base plate; the substrate base plate comprises a sensor area, a transfer terminal area and a pad area;
forming a sensor group on one side of the substrate base plate, wherein the sensor group comprises a plurality of sensors positioned in the sensor area;
depositing a switching structure group, a switching line group and a bonding pad group on one side of the substrate base plate where the sensor group is formed; the switching structure group comprises a plurality of switching terminals positioned in the switching terminal area and a plurality of wires positioned in the sensor area, the switching wire group comprises a plurality of switching wires, and the welding pad group comprises a plurality of welding pads positioned in the welding pad area; the sensor is electrically connected with the switching terminal through the routing wire, and the switching terminal is connected with the bonding pad through the switching wire.
According to the sensor provided by the embodiment of the invention, the patch cord is formed on one side of the substrate base plate in a deposition mode, and the patch cord connects the patch terminal with the bonding pad, so that a gold wire does not need to be prepared when the sensor is packaged subsequently, the problems of complex process flow and high cost caused by preparation of the gold wire in the prior art are solved, and the effects of simplifying the process and reducing the cost are realized.
Drawings
FIG. 1 is a schematic structural diagram of a sensor provided in an embodiment of the present invention;
FIG. 2 is a cross-sectional view along AA' of FIG. 1;
FIG. 3 is a cross-sectional view taken along direction BB' in FIG. 1;
FIG. 4 is another cross-sectional view taken along direction AA' in FIG. 1;
FIG. 5 is another cross-sectional view taken along direction BB' in FIG. 1;
FIG. 6 is a schematic structural diagram of another sensor provided in an embodiment of the present invention;
FIG. 7 is a cross-sectional view taken along direction CC' of FIG. 6;
FIG. 8 is a cross-sectional view taken along direction DD' in FIG. 6;
FIG. 9 is a schematic structural diagram of another sensor provided in an embodiment of the present invention;
FIG. 10 is a sectional view taken along EE' of FIG. 9;
FIG. 11 is a schematic structural diagram of another sensor provided in accordance with an embodiment of the present invention;
FIG. 12 is a cross-sectional view taken along direction FF' of FIG. 11;
FIG. 13 is another cross-sectional view taken in the direction FF' of FIG. 11;
FIG. 14 is a schematic structural diagram of a sensor provided in an embodiment of the present invention;
FIG. 15 is a schematic structural diagram of another sensor provided in accordance with an embodiment of the present invention;
FIG. 16 is a schematic structural diagram of another sensor provided in an embodiment of the present invention;
FIG. 17 is a schematic structural diagram of yet another sensor provided in accordance with an embodiment of the present invention;
FIG. 18 is a flow chart of a method of making a sensor according to an embodiment of the present invention;
fig. 19 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In view of the problems noted in the background, embodiments of the present invention provide a sensor comprising:
the substrate comprises a sensor area, a transfer terminal area and a pad area;
the sensor group is positioned on one side of the substrate; the sensor group comprises a plurality of sensors positioned in the sensor area;
the switching structure group, the switching wire group and the pad group are all positioned on the same side of the substrate base plate as the sensor group, and the switching wire group is deposited on one side of the substrate base plate; the transfer structure group comprises a plurality of wires and a plurality of transfer terminals positioned in a transfer terminal area, the transfer line group comprises a plurality of transfer lines, and the pad group comprises a plurality of pads positioned in a pad area; the sensor is electrically connected with the switching terminal through the wiring, and the switching terminal is electrically connected with the bonding pad through the switching line.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a sensor according to an embodiment of the present invention. Fig. 2 is a cross-sectional view along AA' of fig. 1. Fig. 3 is a cross-sectional view taken along direction BB' in fig. 1. Referring to fig. 1-3, the sensor 210 includes: a substrate base plate 110 including a sensor region CG, a transfer terminal region ZJ, and a pad region HP; a sensor group 210Z located on one side of the substrate base plate 110; sensor group 210Z includes a plurality of sensors 210 located at sensor area CG; the patch structure group 310Z, the patch cord group 410Z and the pad group 510Z are all located on the same side of the substrate base plate 110 as the sensor group 210Z, and the patch cord group 410Z is deposited on one side of the substrate base plate 110; the interposer fabric set 310Z includes a plurality of traces 320 and a plurality of interposer terminals 310 located in the interposer terminal area ZJ, the interposer set 410Z includes a plurality of interposers 410, and the pad set 510Z includes a plurality of pads 510 located in the pad area HP; the sensor 210 and the transit terminal 310 are electrically connected by the trace 320, and the transit terminal 310 is electrically connected by the transit wire 410 and the pad 510.
Specifically, the substrate 110 is used to support and protect the film layer formed thereon, and the material of the substrate 110 may be glass, silicon, or other materials known to those skilled in the art, which is not limited herein.
Specifically, the sensor area CG is used to arrange the sensor 210, and the sensor 210 may include a photoelectric sensor, a pressure sensor, a temperature sensor, a color sensor, or other sensor types known to those skilled in the art, and is not limited herein. The specific film layers of the sensor group 210Z are related to the type and structure of the sensor 210, and will be described in detail later, which will not be described herein.
Specifically, the switching terminal area ZJ is used to dispose the switching terminal 310, which is adjacent to the sensor area CG, and is exemplarily located on one side of the periphery of the sensor area CG (as shown in subsequent fig. 6), located on the opposite sides of the periphery of the sensor area CG, semi-surrounded by the switching terminal area ZJ (as shown in subsequent fig. 15), disposed around the sensor area CG (as shown in fig. 1), or disposed around the switching terminal area ZJ, which is known to one skilled in the art, and is not limited herein. The interposer fabric set 310Z includes a plurality of interposer terminals 310 and a plurality of traces 320, wherein the traces 320 extend from the sensor area CG to the interposer terminal area ZJ, one end of the traces 320 is connected to the sensor 210, and the other end is connected to the interposer terminals 310, so as to achieve the connection between the sensor 210 and the interposer terminals 310, and the plurality of traces 320 in the interposer fabric set 310Z may all be located on the same layer (as shown in fig. 2 and 3) or located on different layers, which is not limited herein. The plurality of interposer terminals 310 in interposer fabric set 310Z may be located in the same layer (as shown in fig. 2 and 3) or in different layers, which is not limited herein. The interconnecting terminals 310 and the traces 320 connected to each other may be disposed in the same layer (as shown in fig. 2 and fig. 3), or disposed in different layers and connected by punching, preferably, the interconnecting terminals 310 and the traces 320 connected to each other are disposed in the same layer, so that both can be formed in the same process, which is beneficial to reducing the number of steps for manufacturing the interconnecting structure group 310Z, and is beneficial to realizing the thinning of the sensor.
Specifically, the pad area HP is used for arranging the pads 510, and the sensors 210 in the sensor group 210Z can receive an external input electrical signal or output an external electrical signal through the pads 510. The pad area HP may be adjacent to the sensor area CG, and for example, when the transfer terminal area ZJ is located at one side of the periphery of the sensor area CG or when the transfer terminal area ZJ semi-surrounds the sensor area CG, the pad area HP is disposed at a side of the sensor area CG that is not adjacent to the transfer terminal area ZJ; the pad area HP may also be located on the side of the transfer terminal area ZJ (as shown in fig. 1) away from the sensor area CG, and the location of the pad area HP is not limited herein, and can be set by those skilled in the art according to the actual situation.
Specifically, one end of the patch cord 410 is connected to the patch terminal 310, and the other end is connected to the pad 510, so as to connect the patch terminal 310 to the pad 510. The multiple patch cords 410 in the patch cord group 410Z may all be located on the same layer (as shown in fig. 2 and 3), or may be located on different layers, the patch cords 410, the patch terminals 310 and the pads 510 may be disposed on the same layer, or the patch cords 410 may be disposed on different layers from at least one of the patch terminals 310 and the pads 510, and at this time, the patch cords 410 are electrically connected to at least one of the patch terminals 310 and the pads 510 through vias (as shown in fig. 2 and 3).
Specifically, the patch cord 410 is formed by deposition, and for example, the patch cord 410 may be formed by physical vapor deposition, where a specific deposition process of the patch cord 410 is not limited, and a person skilled in the art may set the deposition process according to actual situations. It can be appreciated that the interposer 410 is formed by deposition, which is simple in process flow and does not require expensive equipment for gold wire preparation, thereby reducing the cost.
It should be noted that fig. 1 only illustrates the patch cord 410 extending from the transit terminal zone ZJ to the pad zone HP, but the present application is not limited thereto, and a person skilled in the art may set the area where the patch cord 410 is located according to the sensor zone CG, the relative position relationship between the transit terminal zone ZJ and the pad zone HP, and the specific film condition of the patch cord group 410Z, for example, when the transit terminal zone ZJ and the pad zone HP are separately set on two opposite sides of the sensor zone CG, in other embodiments, the patch cord 410 may also be set to extend from the transit terminal zone ZJ, through the sensor zone CG, and to the pad zone HP.
It should be noted that fig. 1 only illustrates that each sensor 210 is connected to two transit terminals 310 through traces 320, but the present application is not limited thereto, and those skilled in the art can set the number of transit terminals 310 connected to each sensor 210 according to the specific type of sensor 210.
According to the sensor provided by the embodiment of the invention, the patch cord is formed on one side of the substrate base plate in a deposition mode, and the patch cord connects the patch terminal with the bonding pad, so that a gold wire does not need to be prepared when the sensor is packaged subsequently, the problems of complex process flow and high cost caused by preparation of the gold wire in the prior art are solved, and the effects of simplifying the process and reducing the cost are realized.
With continued reference to fig. 2 and 3, the interposer fabric set 310Z includes at least one interposer fabric layer, where the interposer fabric layer farthest from the substrate base substrate 110 is the first interposer fabric layer 311; the first bonding structure layer 311 is disposed on the same layer as the pad group 510Z.
With continued reference to fig. 2 and fig. 3, optionally, the first interposer structure layer 311 is located on a side of the sensor group 210Z, the interposer structure group 410Z, and other interposer structure layers in the interposer structure group 310Z facing away from the substrate 110, in other words, the sensor group 210Z, the interposer structure group 310Z, the interposer structure group 410Z, and the pad group 510Z, and a film layer farthest from the substrate 110 is the first interposer structure layer 311, so that when the first interposer structure layer 311 and the pad group 510Z are disposed on the same layer, the pad 510 is not covered by other film layers, but is exposed, so as to facilitate the subsequent bonding of the pad 510 with the circuit board or the chip.
Specifically, the material of the interposer structure layer may be selected from ito or other materials known to those skilled in the art, and is not limited herein. It can be understood that, by disposing the first transfer structure layer 311 and the pad group 510Z in the same layer, the two layers can be prepared and formed through the same process, which is beneficial to simplifying the process and realizing the thin-type sensor 210.
Fig. 4 is another cross-sectional view along direction AA' of fig. 1. Fig. 5 is another cross-sectional view taken along direction BB' in fig. 1. Referring to fig. 4 and 5, the interposer fabric set 310Z includes at least two interposer fabric layers, where the interposer fabric layer farthest from the substrate base substrate 110 is a first interposer fabric layer 311, and the other interposer fabric layers are referred to as second interposer fabric layers 312; the pad group 510Z includes at least two pad layers 511, and at least one pad layer 511 is disposed in the same layer as one of the second interposer structure layers 312.
With continued reference to fig. 4 and 5, optionally, pad subsections of the same pad 510 in different pad layers 511 are formed by punching stacks, illustratively, the pad 510 is shown in fig. 4 and 5 as being formed by stacking two pad subsections, such that the height of each pad subsection can be reduced and the conductive connectivity of the pad 510 can be improved. It should be noted that fig. 4 and 5 exemplarily show that each interposer terminal 310 is formed by an interposer structure layer material in one interposer structure layer, but the present application is not limited thereto, and the interposer terminal 310 may also be formed by stacking at least two interposer terminal sections, which are similar to the pad sections for understanding of the interposer terminal sections and will not be described herein again. It should be noted that, by disposing at least one pad layer 511 in the same layer as the second interposer layer, it is beneficial to simplify the process and to achieve the thin sensor 210.
With continued reference to fig. 2 and 3, optionally, the patch cord set 410Z includes a patch cord layer 411, and each patch cord 410 is located on the same patch cord layer 411; the pad group 510Z includes a pad layer 511, and each pad 510 is located on the same pad layer 511.
This provides the advantage that the patch cords 410 in the patch group can be formed simultaneously in the same fabrication process, and the pads 510 in the pad group 510Z can be formed simultaneously in the same fabrication process. Therefore, the preparation processes of the transfer line group 410Z and the pad group 510Z can be simplified, the total process flow of the sensor 210 is further simplified, the cost is reduced, and the preparation efficiency is improved.
Fig. 6 is a schematic structural diagram of another sensor provided in the embodiment of the present invention. Fig. 7 is a sectional view taken along direction CC' in fig. 6. Fig. 8 is a sectional view taken along direction DD' in fig. 6. Referring to fig. 6-8, optionally, the interposer fabric set 310Z includes at least two interposer fabric layers, and vertical projections of the interposer terminals 310 in two adjacent interposer fabric layers on the substrate 110 at least partially overlap.
Specifically, the vertical projections of the interposer terminals 310 in two adjacent interposer structure layers on the substrate 110 may partially overlap, or the vertical projection of the interposer terminal 310 in the interposer structure layer close to the substrate 110 on the substrate 110 in the two adjacent interposer structure layers falls within the vertical projection of the interposer terminal 310 in the interposer structure layer far from the substrate 110 on the substrate 110 (as shown in fig. 7 and 8), so that the interposer terminals 310 in the two adjacent interposer structure layers are connected to the interposer 410 through the holes without collision.
It can be understood that when the area of the relay terminal zone ZJ is constant, by arranging the perpendicular projections of the relay terminals 310 in two adjacent relay structure layers on the substrate 110 to at least partially overlap, the gap between two adjacent relay terminals 310 can be increased, and the risk of short circuit between two adjacent relay terminals 310 can be reduced.
It should be noted that, for convenience of drawing, the traces 320 connecting the sensor 210 and the transit terminal 310 are not shown in fig. 6, and those skilled in the art can understand from fig. 1, and therefore the description is omitted here.
Specifically, there are various specific film layer arrangement forms of the sensor group 210Z, and the following description is given with reference to a typical example, but not to limit the present application.
With continued reference to fig. 2-5, optionally, the sensor group 210Z includes a first electrode layer 213, a second electrode layer 211, and a sensing layer 212 located between the first electrode layer 213 and the second electrode layer 211; the sensor 210 comprises a first electrode on the first electrode layer 213, a second electrode on the second electrode layer 211, and a sensing structure on the sensing layer 212; the first electrode and the second electrode are electrically connected to the relay terminal 310 through the trace 320. Optionally, the sensing layer 212 includes a photo-sensing layer, a pressure sensing layer, a temperature sensing layer, or a color sensing layer.
Specifically, those skilled in the art can set the materials of the first electrode layer 213, the sensing layer 212 and the second electrode layer 211 according to actual requirements, which is not limited herein. It should be noted that the sensing layer 212 is not limited to the photoelectric sensing layer, the pressure sensing layer, the temperature sensing layer, and the color sensing layer, and may be other film layers having sensing functions, and those skilled in the art may set the type of the sensing layer 212 according to actual needs.
Fig. 9 is a schematic structural diagram of another sensor provided in the embodiment of the present invention. Fig. 10 is a sectional view taken along EE' in fig. 9. Referring to fig. 9 and 10, alternatively, at least two sensors 210 constitute a sensor 210 unit 210U; at least two first electrodes in the same sensor 210 unit 210U are interconnected, and the interconnected at least two first electrodes are connected with the same transit terminal 310; the second electrodes of each sensor 210 are independent of each other.
Specifically, the two first electrodes are electrically connected through the electrode connecting wire, and the electrode connecting wire may be arranged in various ways, and may be set by a person skilled in the art according to actual conditions, which is not limited herein. For example, the electrode connection line may be disposed in the same layer as the first electrode layer 213, as shown in fig. 10; or an electrode connecting wire layer can be independently arranged, and the electrode connecting wire layer comprises a plurality of electrode connecting wires; the electrode connection line may also be provided at the same layer as the trace 320 connecting the first electrode and the transit terminal 310.
It can be understood that when the number of sensors 210 in the sensor group 210Z is constant, by providing at least two first electrode interconnections, the number of the required relay terminals 310 can be reduced, which is beneficial to reducing the area of the relay terminal area ZJ, thereby realizing miniaturization of the sensors 210.
It should be noted that, the present application does not limit the specific interconnection of the first electrodes of the sensors 210 in the same sensor unit 210U, and those skilled in the art can set the interconnection according to practical situations, and optionally, the first electrodes in the same sensor unit 210U are electrically connected to each other. Optionally, the first electrodes of each sensor 210 in the sensor group 210Z are electrically connected to each other. Thus, the number of the required transfer terminals 310 can be further reduced, and the area of the transfer terminal region ZJ can be further reduced.
Fig. 11 is a schematic structural diagram of another sensor according to an embodiment of the present invention. Fig. 12 is a cross-sectional view taken along direction FF' of fig. 11. Fig. 13 is another sectional view taken along direction FF' in fig. 11. Referring to fig. 11-13, optionally, the sensor 210 further includes a switching transistor group 610Z, the switching transistor group 610Z including a third electrode layer 611, a semiconductor layer 612, and a fourth electrode layer 613; the switching transistor 610 includes a control electrode, a third electrode, a fourth electrode, and a channel structure; the control electrode is located on the third electrode layer 611, and the third electrode and the fourth electrode are located on the fourth electrode layer 613; the control electrode and the third electrode are electrically connected with the adapting terminal 310 through the routing wire 320, and the fourth electrode is electrically connected with the second electrode.
Specifically, the switching transistor 610 functions to control whether the sensor 210 electrically connected thereto is operable. When the switching transistor is turned on, the sensor 210 electrically connected thereto can normally operate; when the switching transistor is turned off, the sensors electrically connected thereto stop operating, and thus the number of the sensors 210 currently in operation can be controlled by controlling the on and off of the switching transistor.
It should be noted that fig. 12 only illustrates the switching transistor 610 as a bottom-gate structure, but the present application is not limited thereto, and for example, the switching transistor 610 may be provided as a top-gate structure in another embodiment. Specifically, the switch transistor may be a P-type transistor, or may be an N-type transistor, which is not limited herein. Also, the material of the semiconductor layer in the switching transistor 610 may include Low Temperature Poly Silicon (LTPS), Indium Gallium Zinc Oxide (IGZO), or other types of materials known to those skilled in the art, and is not limited herein.
With continued reference to fig. 11, optionally, a plurality of switching transistors 610 form a switching transistor unit 610U, with at least two control electrodes in the same switching transistor unit 610U interconnected, with the interconnected at least two control electrodes connecting the same through terminal 310. Illustratively, the control electrodes in the same switching transistor unit 610U are interconnected as shown in fig. 11. Thus, the number of the transfer terminals 310 required can be reduced, which is advantageous for reducing the area of the transfer terminal area ZJ.
With reference to fig. 13, optionally, the pad group 510Z, the first electrode layer 213, and the first transfer structure layer 311 are disposed in the same layer, so that the number of film layers commonly included in the sensor can be further reduced, the sensor manufacturing process can be further simplified, and the sensor can be thinned.
With continued reference to fig. 12 and 13, optionally, a switch transistor group 610Z is further included, and the sensor group 210Z is located on a side of the switch transistor group 610Z facing away from the substrate 110; the switching transistor group 610Z includes at least one electrode layer, and an electrode layer closest to the substrate base plate 110 among the at least one electrode layer is a third electrode layer 611; the third electrode layer 611 and the patch cord group 410Z are disposed on the same layer.
It should be noted that, by arranging the third electrode layer 611 and the patch cord group 410Z on the same layer, the number of the film layers above the patch cord 410 is large, the protection strength of the patch cord 410 is high, and the service life of the patch cord 410 is prolonged.
Based on the above technical solution, optionally, a vertical projection area of the pad 510 on the substrate base 110 is larger than a vertical projection area of the through terminal 310 on the substrate base 110.
It will be appreciated that the area of the transfer terminals 310 is generally small and generally distributed around the sensor area CG (as shown in fig. 1), which is not convenient for direct bonding with an external device (e.g., a circuit board or chip). The area of the pad 510 is usually large, and the pad is concentrated in the pad region HP, so that the pad is convenient to bind with an external device, and the contact area of the pad with the external device is large, which is beneficial to reducing the binding difficulty and improving the conductivity of the pad with the external device.
Fig. 14 is a schematic structural diagram of a sensor according to an embodiment of the present invention. Referring to fig. 14, alternatively, the gap between two adjacent pads 510 on the same layer is larger than the gap between two adjacent relay terminals 410 on the same layer.
It can be understood that the through terminals 510 can be formed by deposition, the manufacturing process is fine, the gap between the through terminals 410 can be made smaller, which is beneficial to realizing miniaturization of the sensor, but the difficulty of directly binding the through terminals 410 and an external device is improved, the bonding pad 510 is electrically connected with the through terminal 410, and the gap between two bonding pads 510 is larger than the gap between two adjacent through terminals 410, so that the bonding pad 510 and the external device are less difficult to bind.
Fig. 15 is a schematic structural diagram of another sensor provided in the embodiment of the present invention. Referring to fig. 15, alternatively, the same relay terminal 310 is connected to N pads 510 through N relay lines 410, respectively, where N is an integer greater than or equal to 2.
Specifically, the specific value of N may be set by a person skilled in the art according to actual conditions, and is not limited herein. Exemplarily, N ═ 2 is exemplarily shown in fig. 15.
It is understood that by providing redundant patch cords 410 and pads 510, after one of the pads 510 is damaged (e.g., corroded), the other pads 510 that are electrically connected to the same patch terminal 310 as the damaged pad 510 can also transmit signals in place of the damaged pad 510. Similarly, when one of the patch cords 410 is damaged, the other spare patch cords 320 can continue to transmit signals, so as to ensure the normal operation of the sensor 210, which is beneficial to improving the service life of the sensor 210.
Fig. 16 is a schematic structural diagram of another sensor provided in the embodiment of the present invention. Referring to fig. 16, alternatively, the switching terminal area ZJ surrounds at least two sides of the periphery of the sensor area CG, and the pad area HP is located at one side of the periphery of the sensor area CG.
It is understood that, in general, the pads 510 on an external device (e.g., a circuit board or a chip) are generally disposed in one area in a concentrated manner, rather than scattered in a plurality of areas, and thus, it is difficult to directly bind the transit terminals 310 scattered on different sides of the sensor area CG to the pads 510 on the external device. The scattered transfer terminals 310 are electrically connected to the pad area HP through the transfer lines 410 and are correspondingly electrically connected to the pads 510 concentrated on one side of the sensor area CG, so that the sensor 210 can be more conveniently bound with the pads 510 on an external device (such as a circuit board), and the binding difficulty is reduced.
With continued reference to fig. 16, optionally, the pad area HP includes at least two rows of pads 510, the rows of pads 510 extend along a first direction X and are arranged along a second direction Y, where the first direction X and the second direction Y intersect, and the second direction Y is an arrangement direction of the sensor area CG and the pad area HP; the pads 510 in two adjacent rows of pads 510 are staggered along the first direction X.
It is appreciated that when the number of pads 510 is large, disposing the pads 510 in at least two rows may increase the gap between adjacent pads 510 and reduce the risk of shorting adjacent pads 510 as compared to disposing the pads 510 collectively in one row. In addition, the pads 510 in the row of two adjacent pads 510 are staggered along the first direction X, which can increase the distance between two adjacent pads 510 along the second direction Y, and further reduce the risk of short circuit between two adjacent pads 510.
Fig. 17 is a schematic structural diagram of another sensor according to an embodiment of the present invention. Referring to fig. 17, alternatively, the transfer terminal area ZJ is surrounded around the sensor area CG, and the pad area HP is surrounded around the transfer terminal area ZJ.
It can be understood that, when the number of the pads 510 is large, the pads 510 are disposed around the sensor area CG, so that the patch cable 410 can be routed conveniently, the areas of the pad area HP and the patch terminal area ZJ can be reduced, and the miniaturization of the sensor 210 can be realized.
It should be noted that, for convenience of drawing, the traces 320 connecting the sensor 210 and the transit terminal 310 are not shown in fig. 16 and 17, and those skilled in the art can understand them from fig. 1, 9 or 14, and therefore the description thereof is omitted here. It should be noted that fig. 1, 6, 9, 11, 15, 16 and 17 exemplarily show that the gap between adjacent transit terminals located on the same layer is larger than the gap between adjacent pads, but the present application is not limited thereto, and the gap between adjacent transit terminals may be smaller than the gap between adjacent pads.
Based on the above inventive concept, the embodiment of the present invention further provides a method for manufacturing a sensor, which is used for manufacturing the sensor according to the embodiment of the present invention. Fig. 18 is a flowchart of a method for manufacturing a sensor according to an embodiment of the present invention, and referring to fig. 18, the method specifically includes the following steps:
s110, providing a substrate base plate; the substrate base plate comprises a sensor area, a transfer terminal area and a pad area.
Specifically, the material of the substrate base plate may be glass, silicon, or other materials known to those skilled in the art, and is not limited herein.
And S120, forming a sensor group on one side of the substrate, wherein the sensor group comprises a plurality of sensors positioned in a sensor area.
S130, depositing on one side of the substrate to form the sensor group to form a switching structure group, a switching line group and a bonding pad group; the switching structure group comprises a plurality of switching terminals positioned in a switching terminal area and a plurality of wires positioned in a sensor area, the switching wire group comprises a plurality of switching wires, and the welding pad group comprises a plurality of welding pads positioned in a welding pad area; the sensor is electrically connected with the switching terminal through the wiring, and the switching terminal is connected with the bonding pad through the switching line.
Specifically, the specific film layer of the sensor group is related to the type and structure of the sensor, and the specific film layer of the sensor group is not limited herein, and can be set by a person skilled in the art according to the actual situation.
Specifically, each film layer in the sensor group, the interposer structure group, the interposer group, and the pad group may be formed by physical vapor deposition, chemical vapor deposition, or other film forming methods known to those skilled in the art, and here, the material and the preparation process of each film layer in the sensor group, the interposer structure group, the interposer group, and the pad group are not limited.
Optionally, forming the sensor group on one side of the substrate base plate includes: a first electrode layer, a sensing layer and a second electrode layer are sequentially formed.
Optionally, the method further includes: forming a switch transistor group on one side of a substrate where a sensor group is formed; the switch transistor group comprises a plurality of switch transistors positioned in the sensor area; the switch transistor is electrically connected between the first electrode of the sensor and the switching terminal and used for controlling the connection or disconnection between the first electrode of the sensor and the switching terminal, and the control electrode of the switch transistor is electrically connected with the switching terminal through a wiring.
Based on the above inventive concept, the embodiment of the invention also provides an electronic device. The electronic device comprises a sensor according to any of the implementations of the invention. Therefore, the electronic device has the advantages of the sensor provided by the embodiment of the invention, and the same points can be understood by referring to the above description, which is not repeated herein.
For example, fig. 19 is a schematic structural diagram of an electronic device according to an embodiment of the present invention. As shown in fig. 19, an electronic device 200 provided by an embodiment of the present invention includes the sensor 100 provided by an embodiment of the present invention. The electronic device 200 may exemplarily be an electronic device such as a touch display screen, a mobile phone, a tablet computer, a notebook computer, or a television.
Optionally, the electronic device further includes a circuit board (not shown in fig. 19), and the pads on the circuit board are connected with the pads on the sensor in a bonding manner.
Specifically, devices on the circuit board or other devices connected to the circuit board transmit signals through pads on the circuit board and pads on the sensor.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (17)
1. A sensor, comprising:
the substrate comprises a sensor area, a transfer terminal area and a pad area;
the sensor group is positioned on one side of the substrate base plate; the sensor group comprises a plurality of sensors located in the sensor area;
the switching structure group, the switching wire group and the welding pad group are all positioned on the same side of the substrate base plate as the sensor group, and the switching wire group is deposited on one side of the substrate base plate; the switching structure group comprises a plurality of wires and a plurality of switching terminals positioned at the switching terminal area, the switching line group comprises a plurality of switching lines positioned at the switching terminal area, and the welding pad group comprises a plurality of welding pads positioned at the welding pad area; the sensor is electrically connected with the switching terminal through the routing wire, and the switching terminal is electrically connected with the bonding pad through the switching wire;
the sensor group comprises a first electrode layer, a second electrode layer and a sensing layer positioned between the first electrode layer and the second electrode layer; the sensor comprises a first electrode, a second electrode and a sensing structure, wherein the first electrode is positioned on the first electrode layer, the second electrode is positioned on the second electrode layer, and the sensing structure is positioned on the sensing layer;
the first electrode and the second electrode are electrically connected with the switching terminal through the routing wire.
2. The sensor of claim 1, wherein the interposer fabric set comprises at least one interposer fabric layer, and the interposer fabric layer farthest from the substrate is a first interposer fabric layer;
the first transfer structure layer and the bonding pad group are arranged on the same layer.
3. The sensor of claim 1, wherein the set of interposer fabric layers comprises at least two interposer fabric layers, and perpendicular projections of the interposer terminals in two adjacent interposer fabric layers on the substrate at least partially overlap.
4. The sensor of claim 1, wherein said patch panel includes a patch layer, each of said patch cords being located on the same patch layer; the welding pad group comprises a layer of welding pad layer, and each welding pad is positioned on the same welding pad layer.
5. The sensor of claim 1, further comprising a switching transistor group comprising a third electrode layer, a semiconductor layer, and a fourth electrode layer; the switching transistor comprises a control electrode, a third electrode, a fourth electrode and a channel structure; the control electrode is positioned on the third electrode layer, and the three electrodes and the fourth electrode are positioned on the fourth electrode layer;
the control electrode and the third electrode are electrically connected with the switching terminal through the wiring, and the fourth electrode is electrically connected with the second electrode.
6. The sensor of claim 1, further comprising a set of switching transistors, the set of sensors being located on a side of the set of switching transistors facing away from the substrate base; the switch transistor group comprises at least one electrode layer, and the electrode layer closest to the substrate base plate in the at least one electrode layer is a third electrode layer;
the third electrode layer and the switching wire group are arranged on the same layer.
7. The sensor of claim 1, wherein the sensing layer comprises a photoelectric sensing layer, a pressure sensing layer, a temperature sensing layer, or a color sensing layer.
8. The sensor of claim 1, wherein at least two of the sensors constitute a sensor unit;
at least two first electrodes in the same sensor unit are interconnected, and the interconnected at least two first electrodes are connected with the same transit terminal; the second electrodes of each of the sensors are independent of each other.
9. The sensor of claim 1, wherein a perpendicular projected area of the pad on the substrate base plate is larger than a perpendicular projected area of the via terminal on the substrate base plate.
10. The sensor according to claim 1, wherein the same via terminal is connected to N pads through N via lines, N being an integer equal to or greater than 2.
11. The sensor of claim 1, wherein the transfer terminal area surrounds at least two sides of the perimeter of the sensor area, and the pad area is located on one of the sides of the perimeter of the sensor area.
12. The sensor of claim 11, wherein the pad region includes at least two rows of pad rows extending in a first direction and aligned in a second direction, wherein the first direction and the second direction intersect, and the second direction is an alignment direction of the sensor region and the pad region;
the pads in two adjacent pad rows are staggered along the first direction.
13. The sensor of claim 1, wherein the transfer terminal area surrounds the sensor area and the pad area surrounds the transfer terminal area.
14. An electronic device, characterized in that it comprises a sensor according to any one of claims 1-13.
15. The electronic device of claim 14, further comprising a circuit board, wherein pads on the circuit board are in bonded connection with the pads on the sensor.
16. A method for producing a sensor according to claim 1, comprising:
providing a substrate base plate; the substrate base plate comprises a sensor area, a transfer terminal area and a pad area;
forming a sensor group on one side of the substrate base plate, wherein the sensor group comprises a plurality of sensors positioned in the sensor area;
depositing a switching structure group, a switching line group and a bonding pad group on one side of the substrate base plate where the sensor group is formed; the switching structure group comprises a plurality of switching terminals positioned in the switching terminal area and a plurality of wires positioned in the sensor area, the switching wire group comprises a plurality of switching wires, and the welding pad group comprises a plurality of welding pads positioned in the welding pad area; the sensor is electrically connected with the switching terminal through the routing wire, and the switching terminal is connected with the bonding pad through the switching wire;
the forming of the sensor group on one side of the substrate base plate includes:
a first electrode layer, a sensing layer and a second electrode layer are sequentially formed.
17. The method of manufacturing according to claim 16, further comprising:
forming a switch transistor group on one side of the substrate where the sensor group is formed; the switching transistor group comprises a plurality of switching transistors positioned in the sensor area; the switch transistor is electrically connected between the first electrode of the sensor and the transfer terminal and used for controlling the connection or disconnection between the first electrode of the sensor and the transfer terminal, and the control electrode of the switch transistor is electrically connected with the transfer terminal through the routing wire.
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