CN111969841A - IGBT active clamping circuit - Google Patents
IGBT active clamping circuit Download PDFInfo
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- CN111969841A CN111969841A CN202010755971.2A CN202010755971A CN111969841A CN 111969841 A CN111969841 A CN 111969841A CN 202010755971 A CN202010755971 A CN 202010755971A CN 111969841 A CN111969841 A CN 111969841A
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- igbt
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses an active clamping circuit of an IGBT (insulated gate bipolar translator), wherein a gate G of the IGBT is connected to the output of a push-pull circuit through a driving resistor Rg, the active clamping circuit comprises three transient voltage suppression diodes, a unidirectional TVS1, a bidirectional TVS2 and a bidirectional TVS3, the cathode of the TVS1 is connected with a collector C of the IGBT, the anode of the TVS1 is respectively connected with one ends of a TVS2 and a TVS3, and the other ends of the TVS2 and the TVS3 are respectively connected with the base of the push-pull circuit and the gate G of the IGBT. On the basis of the traditional combined active clamping circuit, the circuit structure is slightly adjusted, a TVS (transient voltage suppressor) tube is added, the turn-off voltage peak of the IGBT is reliably protected, and the clamping action voltage range is small.
Description
Technical Field
The invention relates to IGBT drive protection, in particular to an active clamping circuit of an IGBT.
Background
With the increasing popularity of hybrid electric vehicles and electric vehicles, the driving systems thereof are developing towards high voltage and high power, and the IGBT modules with larger current and higher voltage are beginning to be applied.
In order to make electric vehicles and hybrid vehicles have higher maximum speed and acceleration, a higher-power motor and a higher-power IGBT module are required. With the improvement of a voltage platform of the motor controller, under the working conditions of bus overvoltage or output overcurrent and short circuit, the turn-off voltage spike Vce of the IGBT risks exceeding the withstand voltage of the IGBT. This is also one of the typical causes of IGBT overvoltage failure; therefore, suppression of the IGBT turn-off voltage spike Vce is very necessary.
A conventional combined active clamp circuit includes: improved active clamping circuits and basic active clamping circuits. As shown in fig. 1; the breakdown current of the TVS (TVS1 and TVS2) is divided into two paths, one path of current Iz1 reaches the front stage of the driving push-pull circuit, and the other path of current Iz2 reaches the gate of the IGBT.
When the existing combined active clamp circuit is used, if the equivalent input capacitance of an IGBT gate pole is large, the IGBT is turned off under the second short-circuit heavy-current working condition, and the turn-off voltage peak of the IGBT is too large, the turn-off voltage peak may exceed the breakdown voltage point of the Vce of the IGBT.
Disclosure of Invention
The invention aims to: provided is an active clamp circuit for an IGBT, which can limit the active clamp operation voltage range to a small range.
The technical scheme of the invention is as follows:
an IGBT active clamping circuit, wherein a gate pole G of the IGBT is connected with the output end of a push-pull circuit; the active clamp circuit includes three transient voltage suppression diodes: unidirectional TVS1, bidirectional TVS2, and bidirectional TVS 3; the cathode of the TVS1 is connected with the collector C of the IGBT, the anode of the TVS1 is respectively connected with one ends of the TVS2 and the TVS3, and the other ends of the TVS2 and the TVS3 are respectively connected with the base of the push-pull circuit and the gate G of the IGBT.
Preferably, the output end of the push-pull circuit is connected with the gate G of the IGBT through a driving resistor Rg.
Preferably, the collector C and the emitter E of the IGBT are respectively connected with a high voltage positive and a high voltage negative.
Preferably, the push-pull circuit is composed of two push-pull triodes with common base electrodes, or a push-pull chip is adopted.
Preferably, the number of the transient voltage suppression diodes is increased on the branch where the three transient voltage suppression diodes TVS1, TVS2 and TVS3 are located.
The invention has the advantages that:
on the basis of the traditional combined active clamping circuit, the circuit structure is slightly adjusted, a TVS (transient voltage suppressor) tube is added, the turn-off voltage peak of the IGBT is reliably protected, and the clamping action voltage range is small.
Drawings
The invention is further described with reference to the following figures and examples:
fig. 1 is a schematic diagram of an active clamp circuit of a conventional IGBT;
fig. 2 is a schematic diagram of an active clamp circuit of the IGBT of the present invention.
Detailed Description
As shown in FIG. 2, the gate G of the IGBT of the active clamp circuit of the invention is connected with a driving resistor of a push-pull circuit, the collector C and the emitter E of the IGBT are respectively connected with a high level and the ground, the push-pull circuit is composed of two push-pull triodes with common base, and the output end of the push-pull circuit is connected with the gate G of the IGBT through the driving resistor Rg.
In fig. 2, the active clamp circuit includes three transient voltage suppression diodes: unidirectional TVS1, bidirectional TVS2, and bidirectional TVS 3; the cathode of the TVS1 is connected with the collector C of the IGBT, the anode of the TVS1 is respectively connected with one ends of the TVS2 and the TVS3, and the other ends of the TVS2 and the TVS3 are respectively connected with the base of the push-pull circuit and the gate G of the IGBT.
The gate capacitance of the IGBT is large, and the range of the traditional combined active clamping point action clamping interval is large; the combined active clamping circuit modified by the scheme can reduce the range of the clamping voltage to a great extent; as long as the breakdown voltage depth of the common TVS1 transistor is near the typical value, even if the gate capacitance of the IGBT is large, the turn-off process of the gate voltage of the basic active clamp circuit (branch 2) is difficult to slow; however, the breakdown current of the improved active clamping circuit (branch 1) can affect the current for driving the push-pull base stage and change the collector current of the push-pull; therefore, the turn-off process of the IGBT is slowed down, the turn-off voltage peak of the IGBT is reduced, and the purpose of clamping the voltage peak is achieved; the turn-off current of the IGBT is within the range of less than or equal to the short-circuit current, the turn-off voltage spike of the IGBT is reliably protected, and the range of the clamping voltage action interval is small.
When the invention is implemented, the push-pull circuit adopts the two triodes and can also adopt a push-pull chip.
In the implementation of the invention, the number and the type of the three TVS1, TVS2 and TVS3 can be changed on the branch where the three TVS1, TVS2 and TVS3 are located.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All modifications made according to the spirit of the main technical scheme of the invention are covered in the protection scope of the invention.
Claims (5)
1. An IGBT active clamping circuit, wherein a gate pole G of the IGBT is connected with the output end of a push-pull circuit; wherein the active clamp circuit includes three transient voltage suppression diodes: unidirectional TVS1, bidirectional TVS2, and bidirectional TVS 3; the cathode of the TVS1 is connected with the collector C of the IGBT, the anode of the TVS1 is respectively connected with one ends of the TVS2 and the TVS3, and the other ends of the TVS2 and the TVS3 are respectively connected with the base of the push-pull circuit and the gate G of the IGBT.
2. The active clamp circuit of the IGBT of claim 1, wherein the output terminal of the push-pull circuit is connected to the gate G of the IGBT through a driving resistor Rg.
3. The IGBT active clamp circuit of claim 2, wherein the IGBT collector C and emitter E are connected to high voltage positive and negative, respectively.
4. The IGBT active clamp circuit according to claim 3, wherein the push-pull circuit is composed of two common-base push-pull triodes or a push-pull chip.
5. The active clamp circuit of the IGBT according to any one of claims 1-4, wherein the three TVS1, TVS2, TVS3 branches with an increased number of TVS 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010755971.2A CN111969841A (en) | 2020-07-31 | 2020-07-31 | IGBT active clamping circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010755971.2A CN111969841A (en) | 2020-07-31 | 2020-07-31 | IGBT active clamping circuit |
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| Publication Number | Publication Date |
|---|---|
| CN111969841A true CN111969841A (en) | 2020-11-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010755971.2A Pending CN111969841A (en) | 2020-07-31 | 2020-07-31 | IGBT active clamping circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130021700A1 (en) * | 2011-07-21 | 2013-01-24 | Markus Greither | Active clamped transistor circuit |
| CN103545802A (en) * | 2013-11-01 | 2014-01-29 | 山东大学（威海） | Novel IGBT active clamp protective circuit |
| CN104052048A (en) * | 2014-07-10 | 2014-09-17 | 北京赛德高科铁道电气科技有限责任公司 | Active clamping circuit driven by IGBT |
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN204906177U (en) * | 2015-09-19 | 2015-12-23 | 许昌学院 | IGBT turn -offs overvoltage active clamping circuit |
| CN207251460U (en) * | 2017-08-30 | 2018-04-17 | 苏州汇川联合动力系统有限公司 | A kind of active clamp circuit and electric machine controller of suppression IGBT shut-offs spike |
-
2020
- 2020-07-31 CN CN202010755971.2A patent/CN111969841A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130021700A1 (en) * | 2011-07-21 | 2013-01-24 | Markus Greither | Active clamped transistor circuit |
| CN103545802A (en) * | 2013-11-01 | 2014-01-29 | 山东大学（威海） | Novel IGBT active clamp protective circuit |
| CN104052048A (en) * | 2014-07-10 | 2014-09-17 | 北京赛德高科铁道电气科技有限责任公司 | Active clamping circuit driven by IGBT |
| CN204906177U (en) * | 2015-09-19 | 2015-12-23 | 许昌学院 | IGBT turn -offs overvoltage active clamping circuit |
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN207251460U (en) * | 2017-08-30 | 2018-04-17 | 苏州汇川联合动力系统有限公司 | A kind of active clamp circuit and electric machine controller of suppression IGBT shut-offs spike |
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