CN216774743U - IGBT drive circuit - Google Patents
IGBT drive circuit Download PDFInfo
- Publication number
- CN216774743U CN216774743U CN202122663764.7U CN202122663764U CN216774743U CN 216774743 U CN216774743 U CN 216774743U CN 202122663764 U CN202122663764 U CN 202122663764U CN 216774743 U CN216774743 U CN 216774743U
- Authority
- CN
- China
- Prior art keywords
- igbt
- gate
- driving
- gate driving
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The application discloses IGBT drive circuit for drive turn-on and turn-off of IGBT. The IGBT driving circuit comprises a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with a gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected to two ends of the gate driving resistor in parallel and used for controlling the turn-on and turn-off speed of the IGBT. The application has the advantages of simple structure, obvious effect and easiness in implementation, thereby reducing the development cost.
Description
Technical Field
The application relates to an IGBT drive circuit.
Background
With the wide application of the IGBT driver in the hot door industries such as photovoltaic, wind power generation, frequency conversion, electric vehicles, etc., the multilevel driving technology becomes one of the important research and development directions of the industry, and some technical difficulties are inevitably encountered in the research and development process, for example, the problem that the stress of the three-level inner tube is large is reduced by increasing the gate resistance, but the switching delay is increased at the same time, so that the dead time is increased by the controller to avoid the direct connection.
In the prior art, the switch delay can be prevented from being increased under the condition of reducing stress through the multi-stage turn-off circuit design; however, this method makes the structure of the driving circuit complicated and increases the design cost.
SUMMERY OF THE UTILITY MODEL
Therefore, it is desirable to provide an IGBT driving circuit that can reduce stress and switching delay, and has a simple circuit structure and low development cost.
The technical scheme proposed by the application for achieving the purpose is as follows:
the IGBT driving circuit comprises a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with a gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected with two ends of the gate driving resistor in parallel and used for controlling the turn-on and turn-off speed of the IGBT.
Further, the driving control unit is a capacitor or a transient voltage suppression diode.
According to the IGBT driving circuit, the driving control units such as the capacitance or the transient voltage suppression diode are connected to the two ends of the gate resistor in parallel, so that the effect of accelerating on or accelerating off is achieved when the IGBT is turned on or turned off, the switching time delay and the electrical stress are reduced through the simplest circuit structure, and the function of multi-stage switching is achieved.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of an IGBT driver circuit provided in the present application.
Fig. 2 is a circuit diagram of embodiment 1 of the IGBT driver circuit provided in the present application.
Fig. 3 is a schematic diagram of a test effect according to an embodiment of the present disclosure.
Fig. 4 is a circuit diagram of embodiment 2 of the IGBT drive circuit provided in the present application.
Description of the main elements
Gate resistance RG
Triode Q1, Q2
Capacitor C
Transient voltage suppression diode D
The following detailed description will further illustrate the present application in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, the present application provides an IGBT driving circuit for driving an IGBT to turn on and off. IGBT drive circuit includes gate drive unit (1), gate Resistance (RG) and drive control unit (2), the one end of gate Resistance (RG) is connected with IGBT's gate pole electricity, the other end of gate Resistance (RG) with gate drive unit (1) electricity is connected, drive control unit (2) parallel connection in the both ends of gate Resistance (RG) for the speed of opening and shutting down of control IGBT.
Example 1
Referring to fig. 2, fig. 2 is a circuit diagram of an embodiment of the present application. The gate driving unit (1) comprises a triode (Q1) and a triode (Q2). The triode (Q1) and the triode (Q2) form a push-pull amplifying circuit which is used for amplifying the driving signal. The base electrode of the triode (Q1) is electrically connected with the base electrode of the triode (Q2) and is used for receiving a driving signal input by a superior circuit. And the emitter of the triode (Q1) is electrically connected with the emitter of the triode (Q2) and is used for outputting a push-pull amplified driving signal, and the driving signal is transmitted to the grid of the IGBT through a gate Resistor (RG) so as to drive the IGBT to be switched on or switched off. The drive control unit (2) comprises a capacitor (C), wherein the capacitor (C) is connected to two ends of the gate Resistor (RG) in parallel and is used for playing an acceleration role when a drive signal changes from high to low (a turn-off process) or changes from low to high (a turn-on process). The collector of the triode (Q1) is connected with a power supply (V1), and the collector of the triode (Q2) is grounded.
Specifically, because the voltage can not suddenly change at the both ends of electric capacity for drive circuit is at the switch switching moment, the electric potential at electric capacity (C) both ends is zero, the both ends of gate Resistance (RG) are equivalent to the short circuit, gate drive unit (1) will drive IGBT with minimum gate resistance (IGBT internal resistance), make the IGBT gate pole draw low fast or draw high, reach the effect of accelerating IGBT switching speed, later slowly resume to with gate resistance of gate Resistance (RG) size drives IGBT. In the whole process, the gate resistance is switched from the small resistance to the large resistance, the switch time delay and the electric stress are reduced by the simplest circuit structure, and the function of multi-stage switching is realized.
In this embodiment, the size of the capacitor (C) can be adjusted to the optimal time when the IGBT enters the miller platform, specifically, the gate Resistance (RG) and the IGBT gate capacitance are combined.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a test effect according to an embodiment of the present application. As shown, t2 is the time when the IGBT enters the miller stage without the driving control unit (2), and generally, the larger the gate resistance, the larger the t2 time, and the larger the turn-off delay. However, after the driving control unit (2) is added, the time for the IGBT to enter the Miller platform is accelerated, the time for the IGBT to enter the Miller platform can be shortened to t1, and the turn-off delay can be greatly shortened.
Example 2
Referring to fig. 4, embodiment 2 is different from embodiment 1 in that: the drive control unit (2) is a Transient Voltage Suppressor (TVS). At the switch switching moment, because TVS diode (D) both ends voltage surpasss TVS's clamping voltage, TVS diode (D) switches on for the electric potential at TVS diode (D) both ends is clamped, the both ends of gate Resistance (RG) are equivalent to the short circuit, gate drive unit (1) will be with minimum gate resistance drive IGBT, make the IGBT gate pole draw down fast or draw high, reach the effect of accelerating IGBT switching speed, resume when gate voltage and driving source pressure differential are less than TVS diode (D) clamping voltage for with gate Resistance (RG) size gate resistance drives IGBT.
According to the IGBT driving circuit, the driving control units (2), such as the capacitor or the TVS diode, are connected to the two ends of the gate Resistance (RG) in parallel, so that the IGBT driving circuit can control the on or off of the switching resistance when the IGBT is switched on or off, and can achieve the effect of accelerating the on or off, thereby reducing the switching delay and the electrical stress and realizing the multi-stage switching function. The application has the advantages of simple structure, obvious effect and easiness in implementation, thereby reducing the development cost.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (2)
1. The IGBT driving circuit is used for driving the IGBT to be switched on and switched off and is characterized by comprising a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with a gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected with two ends of the gate driving resistor in parallel and used for controlling the switching-on and switching-off speeds of the IGBT.
2. The IGBT driver circuit according to claim 1, wherein the drive control unit is a capacitor or a transient voltage suppressor diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202122663764.7U CN216774743U (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202122663764.7U CN216774743U (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN216774743U true CN216774743U (en) | 2022-06-17 |
Family
ID=81960876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202122663764.7U Active CN216774743U (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN216774743U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113938121A (en) * | 2021-10-29 | 2022-01-14 | 深圳青铜剑技术有限公司 | IGBT drive circuit |
-
2021
- 2021-10-29 CN CN202122663764.7U patent/CN216774743U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113938121A (en) * | 2021-10-29 | 2022-01-14 | 深圳青铜剑技术有限公司 | IGBT drive circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105429441B (en) | IGBT closed loop initiative driving circuit and its driving method | |
CN216564923U (en) | Power device drive circuit | |
CN216774743U (en) | IGBT drive circuit | |
CN101674001B (en) | Bridge driving circuit with blind area control | |
CN102868284B (en) | IGBT (Insulated Gate Bipolar Transistor) drive circuit | |
CN202068550U (en) | Mute control circuit for power failure | |
CN104779780A (en) | IGBT series voltage-equalizing circuit and method | |
CN113938121A (en) | IGBT drive circuit | |
CN208285214U (en) | A kind of stagnant ring driving device of low-power consumption | |
CN111245412A (en) | Switching device control circuit and control method thereof | |
CN103001620A (en) | Gate-modified IGBT (insulated gate bipolar transistor) driving circuit | |
CN210431216U (en) | Drive circuit and inverter power supply | |
CN105519270B (en) | A kind of pulse width signal amplifying circuit | |
CN200994126Y (en) | Transistor driving circuit | |
CN207801886U (en) | High pressure IGBT digit driver | |
CN202068549U (en) | Integral power-on and power-off mute control circuit | |
CN207069914U (en) | Ultrasonic wave High Power IGBT Driver Circuit | |
CN204425301U (en) | A kind of drive circuit of servo-driver | |
CN218103097U (en) | IGBT drive protection circuit | |
CN104779939B (en) | A kind of delay matching circuit and method for IGBT series average-voltages | |
CN101662205B (en) | Boost-buck accelerating circuit | |
CN220022774U (en) | Driving circuit of IGBT | |
CN220556580U (en) | Relay control circuit | |
CN218829888U (en) | High-voltage high-power IGBT (insulated Gate Bipolar transistor) driving circuit | |
CN210327413U (en) | DC-AC conversion circuit and inverter circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |