CN111969029B - TFT device structure for OLED display panel - Google Patents
TFT device structure for OLED display panel Download PDFInfo
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- CN111969029B CN111969029B CN202010898209.XA CN202010898209A CN111969029B CN 111969029 B CN111969029 B CN 111969029B CN 202010898209 A CN202010898209 A CN 202010898209A CN 111969029 B CN111969029 B CN 111969029B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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Abstract
The invention belongs to the technical field of OLED display, and particularly relates to a TFT device structure for an OLED display panel, which comprises the following components: the TFT array substrate comprises a substrate, wherein a liner layer is arranged on the upper surface of the substrate, a shading layer is arranged on the upper surface of the liner layer, a polycrystalline silicon layer covering the shading layer and the liner layer is arranged on the upper surface of the shading layer, a dielectric layer covering the polycrystalline silicon layer is arranged on the upper surface of the polycrystalline silicon layer, a semiconductor layer is arranged on one side of the upper surface of the dielectric layer, a gate insulating layer covering the semiconductor layer and the dielectric layer is arranged on the upper surface of the semiconductor layer, a gate is arranged on the upper surface of the gate insulating layer, an interlayer insulating layer covering the gate and the gate insulating layer is arranged on the upper surface of the gate, and a source electrode and a drain electrode are arranged on the upper surface of the interlayer insulating layer; the invention has better performance and lower material process cost.
Description
Technical Field
The invention belongs to the technical field of OLED display, and particularly relates to a TFT device structure for an OLED display panel.
Background
The thin film transistor has various structures, and materials for preparing the thin film transistor with the corresponding structure are also various, and low temperature polysilicon (LowTemperaturePolySilicon, LTPS) is one of the preferred types, and the low temperature polysilicon thin film transistor has higher mobility for the voltage driven type liquid crystal display device due to the regular arrangement of atoms of the low temperature polysilicon, and the carrier mobility is high. The electron mobility of the traditional amorphous silicon material is about 0.5-1.0cm2/V.S, and the electron mobility of the low-temperature polysilicon can reach 30-300cm2/V.S. Therefore, the LTPS-TFTLCD has the advantages of high resolution, high reaction speed, high aperture ratio and the like, and is widely applied to high-end mobile phones and tablet personal computers.
In the process of TFT devices, a silicon nitride (SiNx) layer, a silicon oxide (SiO 2) layer, a silicon oxynitride (SiON) layer, or a stacked structure thereof is generally used as an insulating medium to perform functions such as insulation and ion blocking.
Currently, in the process of manufacturing a touch display device, an In-cell or on-cell mode is generally used to perform an integrated operation on a touch panel and a liquid crystal panel. The on-cell touch technology is a method of embedding a touch screen between a color filter substrate and a polarizer of a display screen, namely, a touch sensor is arranged on a liquid crystal panel; in-cell touch technology is that the touch panel function is embedded into the liquid crystal pixel, namely, the whole touch control component is integrated into the display panel, so that the display device and the touch control device are integrated into a whole, the thickness of a screen is effectively reduced, and meanwhile, the difficulty of a terminal product In structural design is reduced.
However, since In-cell technology requires that a touch sensor is embedded In a pixel on a Thin Film Transistor (TFT) array substrate, the manufacturing process is more complicated, the yield of products is reduced, and meanwhile, the area of a region for display is reduced, which results In degradation of the image quality of a display device. In addition, the existing AMOLED adopts self-luminescence technology, and although a touch sensor (touch sensor) can be prepared on the packaging glass, the defects of uneven display (Mura), high alignment difficulty and the like of the display device still can be caused by the mutual interference of light.
Disclosure of Invention
The invention provides a TFT device structure for an OLED display panel, and aims to solve the problems of complex manufacturing process, high process cost and poor product performance of the conventional TFT device in the background art.
In order to achieve the above purpose, the present invention provides the following technical solutions: a TFT device structure for an OLED display panel, comprising:
the TFT array substrate comprises a substrate, wherein a liner layer is arranged on the upper surface of the substrate, a shading layer is arranged on the upper surface of the liner layer, a polycrystalline silicon layer covering the shading layer and the liner layer is arranged on the upper surface of the shading layer, a medium layer covering the polycrystalline silicon layer is arranged on the upper surface of the polycrystalline silicon layer, a semiconductor layer is arranged on one side of the upper surface of the medium layer, a gate insulating layer covering the semiconductor layer and the medium layer is arranged on the upper surface of the semiconductor layer, a gate is arranged on the upper surface of the gate insulating layer, an interlayer insulating layer covering the gate and the gate insulating layer is arranged on the upper surface of the gate, a source electrode and a drain electrode are arranged on the upper surface of the interlayer insulating layer, the source electrode and the drain electrode sequentially penetrate through the interlayer insulating layer and the gate insulating layer, and the source electrode and the drain electrode are respectively abutted to two ends of the semiconductor layer;
the insulating layer is arranged on the upper surface of the TFT array substrate, and the lower surface of the insulating layer is provided with a hollow groove for accommodating the source electrode and the drain electrode;
the signal lead is arranged on the upper surface of the insulating layer, penetrates through the insulating layer to the empty slot, and is electrically connected with the source electrode and the drain electrode.
Preferably, the dielectric layer comprises an aluminum oxide layer and an aluminum nitride layer which are sequentially arranged from bottom to top.
Preferably, the upper surface of the insulating layer is provided with a flat layer covering the insulating layer and the signal leads, the upper surface of the flat layer is positioned above the signal leads and is provided with an OLED module, one side of the upper surface of the flat layer, which is positioned on the OLED module, is provided with a driving electrode, the upper surface of the driving electrode is provided with a pixel definition layer covering the driving electrode and part of the flat layer, the top of the pixel definition layer is clamped with an upwardly protruding dielectric layer, and the upper surface of the dielectric layer is provided with a sensing electrode.
Preferably, the OLED module comprises an anode clamped on the upper surface of the flat layer, two through lead-out holes are formed in the upper surface of the flat layer, two ends of the anode can extend into the two lead-out holes respectively, an OLED device layer is arranged on the upper surface of the anode, and a cathode is arranged on the upper surface of the OLED device layer.
Preferably, one end of the cathode is vertically provided with a light extraction layer, and the light extraction layer is closely attached to the side wall of the pixel definition layer.
Preferably, a clamping groove is formed in one side of the upper surface of the flat layer and one side of the flat layer, which is located on one side of the driving electrode, and a clamping block matched with the clamping groove is fixed on the anode.
Preferably, the upper surface of the top of the pixel definition layer is provided with a containing groove matched with the dielectric layer, two sides of the bottom of the containing groove are respectively provided with an L groove, and two corners of the bottom of the dielectric layer are respectively provided with L blocks matched with the L grooves.
Preferably, the gate electrode, the source electrode, and the drain electrode have a single-layer structure formed of a molybdenum layer or a double-layer structure formed of a molybdenum layer and an aluminum layer stacked together.
Preferably, the light shielding layer has a trapezoid shape.
Preferably, the thickness of the grid electrode is 2000-3000 angstroms, and the material of the grid electrode is molybdenum.
Compared with the prior art, the invention has the beneficial effects that: the TFT device structure has better performance and lower material process cost, the semiconductor layer can be protected by adopting the dielectric layer with a double-layer structure formed by overlapping the aluminum oxide layer and the aluminum nitride layer, aluminum nitride has good thermal conductivity and chemical stability, a good contact interface can be formed between the aluminum nitride layer and silicon, the thermal stress of the aluminum oxide layer and the silicon interface can be eliminated by the aluminum nitride layer, and silicon oxide is prevented from being formed at the interface at high temperature; by arranging the three-dimensional trapezoid shading layer on the backing layer, the width-to-length ratio of the channel is increased on the basis of not increasing the projection area, and the performance of the TFT device is improved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is a schematic structural diagram of a TFT array substrate according to the present disclosure;
in the figure: 1-insulating layer, 11-empty trench, 2-flat layer, 21-card trench, 22-extraction hole, 3-signal lead, 4-OLED module, 41-anode, 411-fixture block, 42-OLED device layer, 43-cathode, 5-pixel definition layer, 51-accommodation trench, 52-L trench, 6-TFT array substrate, 61-substrate, 62-light shielding layer, 63-dielectric layer, 631-alumina layer, 632-aluminum nitride layer, 64-polysilicon layer, 65-semiconductor layer, 66-gate insulating layer, 67-gate, 68-interlayer insulating layer, 69-source, 610-drain, 611-liner layer, 7-drive electrode, 8-dielectric layer, 9-sense electrode, 10-light extraction layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, the present invention provides a technical solution: a TFT device structure for an OLED display panel, comprising:
the TFT array substrate 6, the TFT array substrate 6 includes a substrate 61, a liner layer 611 is disposed on the upper surface of the substrate 61, a light shielding layer 62 is disposed on the upper surface of the liner layer 611, a polysilicon layer 64 covering the light shielding layer 62 and the liner layer 611 is disposed on the upper surface of the light shielding layer 62, a dielectric layer 63 covering the polysilicon layer 64 is disposed on the upper surface of the polysilicon layer 64, a semiconductor layer 65 is disposed on one side of the upper surface of the dielectric layer 63, a gate insulating layer 66 covering the semiconductor layer 65 and the dielectric layer 63 is disposed on the upper surface of the semiconductor layer 65, a gate 67 is disposed on the upper surface of the gate insulating layer 66, an interlayer insulating layer 68 covering the gate 67 and the gate insulating layer 66 is disposed on the upper surface of the gate 67, a source 69 and a drain 610 are disposed on the upper surface of the interlayer insulating layer 68, the source 69 and the drain 610 sequentially penetrate through the interlayer insulating layer 68 and the gate insulating layer 66, and the source 69 and the drain 610 are respectively abutted to two ends of the semiconductor layer 65;
an insulating layer 1, wherein the insulating layer 1 is arranged on the upper surface of the TFT array substrate 6, and the lower surface of the insulating layer 1 is provided with a hollow 11 for accommodating the source electrode 69 and the drain electrode 610;
the signal lead 3, the signal lead 3 is disposed on the upper surface of the insulating layer 1, and the signal lead 3 penetrates through the insulating layer 1 to the empty slot 11, and the signal lead 3 is electrically connected with the source 69 and the drain 610.
In the present embodiment, when manufacturing the TFT device, a substrate 61 is first required, a patterned and three-dimensional light shielding layer 62 is formed on the liner layer 2, and then a channel is formed above the patterned and three-dimensional light shielding layer, so that the width of the channel can be effectively increased on the premise of ensuring that the projection area of the substrate is unchanged, and the width-to-length ratio of the channel is further increased, and on-state current is improved. The liner layer 2 is made of a silicon nitride layer, the polysilicon layer 64 is etched to form an active region, the polysilicon layer 64 is subjected to magnetron sputtering to form a dielectric layer 63, the dielectric layer 63 is used as a buffer layer, then a gate insulating layer 66 is formed by etching, and a stacked layer of the gate 67 and the gate insulating layer 66 is provided with at least a stacked gate 67 overlapped above a channel region of the active region, so that the process for forming the low-temperature polysilicon semiconductor layer 65 is the same as the prior art. By the dual functions of the interlayer insulating layer 68 and the insulating layer 1, and the signal lead 3 penetrates into the empty groove 11 to be electrically connected with the source electrode 69 and the drain electrode 610, the manufacturing process is simple, the cost is low, and the use is convenient.
Further, the dielectric layer 63 includes an aluminum oxide layer 631 and an aluminum nitride layer 632 which are provided in this order from bottom to top.
In this embodiment, the aluminum oxide has the characteristics of excellent moisture and metal ion isolation, strong chemical corrosion resistance, high thermal stability and the like, and can well protect the semiconductor layer 65 and the TFT device, and the aluminum nitride has good thermal conductivity and chemical stability, and can eliminate the thermal stress of the interface between the aluminum oxide layer 631 and the silicon.
Further, the upper surface of the insulating layer 1 is provided with a flat layer 2 covering the insulating layer 1 and the signal leads 3, an OLED module 4 is arranged on the upper surface of the flat layer 2 and above the signal leads 3, a driving electrode 7 is arranged on one side of the flat layer 2 and located on the OLED module 4, a pixel definition layer 5 covering the driving electrode 7 and part of the flat layer 2 is arranged on the upper surface of the driving electrode 7, a dielectric layer 8 protruding upwards is clamped at the top of the pixel definition layer 5, and a sensing electrode 9 is arranged on the upper surface of the dielectric layer 8.
In this embodiment, the material of the dielectric layer 8 is an insulating material, and the driving electrode 7, the dielectric layer 8 and the sensing electrode 9 together form an inductor structure, so that the pixel on the TFT array substrate 1 is conveniently embedded with a touch sensor function, and the integration of the display device and the touch device is further realized.
Further, the OLED module 4 includes an anode 41 clamped on the upper surface of the flat layer 2, two through extraction holes 22 are formed on the upper surface of the flat layer 2, two ends of the anode 41 can respectively extend into the two extraction holes 22, an OLED device layer 42 is disposed on the upper surface of the anode 41, and a cathode 43 is disposed on the upper surface of the OLED device layer 42.
In this embodiment, two ends of the anode 41 may extend into the two lead-out holes 22, and may be electrically connected to the source 69 and the drain 610, respectively, so that the operation is convenient, and the OLED device layer 42 serves as a light emitting layer of the display device.
Further, a light extraction layer 10 is vertically provided at one end of the cathode 43, and the light extraction layer 10 is closely attached to the sidewall of the pixel defining layer 5.
In the present embodiment, the light extraction layer 10 is made of an organic material.
Further, a clamping groove 21 is formed on the upper surface side of the flat layer 2 and on the side of the driving electrode 7, and a clamping block 411 matched with the clamping groove 21 is fixed on the anode 41.
In the present embodiment, the fixture 411 is clamped into the clamping groove 21, so that the anode 41 is mounted, the disassembly is convenient, and the fixture 411 and the clamping groove 21 are rectangular, so that the space is saved.
Further, the top surface of the pixel defining layer 5 is provided with a containing groove 51 adapted to the dielectric layer 8, two sides of the bottom of the containing groove 51 are respectively provided with an L groove 52, and two corners at the bottom of the dielectric layer 8 are respectively provided with an L block 81 adapted to the L groove 52.
In this embodiment, two L blocks 81 are correspondingly clamped into two L grooves 52, so as to mount and dismount the dielectric layer 8, and facilitate replacement of dielectric layers 8 of different materials.
Further, the gate electrode 67, the source electrode 69, and the drain electrode 610 have a single-layer structure formed of a molybdenum layer or a double-layer structure formed by stacking a molybdenum layer and an aluminum layer.
In this embodiment, the weight of the entire device is reduced, so that the thickness of the TFT device is thinner, and the cost is reduced.
Further, the light shielding layer 62 has a trapezoid shape.
In the present embodiment, the trapezoid light shielding layer 62 can effectively increase the width of the channel and further increase the width-to-length ratio of the channel on the premise of ensuring the constant projected area of the substrate
Further, the thickness of the gate 67 is 2000-3000 angstroms, and the gate 67 is made of molybdenum.
In the present embodiment, the gate 67 made of molybdenum is most effective, and the thickness of the gate 67 is preferably 2500.
The working principle and the using flow of the invention are as follows: after the invention is installed, when the TFT device is manufactured, a substrate base plate 61 is needed, a patterned three-dimensional shading layer 62 is formed on a liner layer 2, and then a channel is formed above the shading layer, so that the width of the channel can be effectively increased on the premise of ensuring that the projection area of the substrate is unchanged, the width-to-length ratio of the channel is further increased, and on-state current is improved. The liner layer 2 is made of a silicon nitride layer, the polysilicon layer 64 is etched to form an active region, the polysilicon layer 64 is subjected to magnetron sputtering to form a dielectric layer 63, the dielectric layer 63 is used as a buffer layer, then a gate insulating layer 66 is formed by etching, and a stacked layer of the gate 67 and the gate insulating layer 66 is provided with at least a stacked gate 67 overlapped above a channel region of the active region, so that the process for forming the low-temperature polysilicon semiconductor layer 65 is the same as the prior art. By the dual functions of the interlayer insulating layer 68 and the insulating layer 1, and the signal lead 3 penetrates into the empty groove 11 to be electrically connected with the source electrode 69 and the drain electrode 610, the manufacturing process is simple, the cost is low, and the use is convenient.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. A TFT device structure for an OLED display panel, comprising:
TFT array substrate (6), TFT array substrate (6) includes substrate (61), substrate (61) upper surface is provided with backing layer (611), backing layer (611) upper surface is provided with light shielding layer (62), light shielding layer (62) upper surface is provided with and covers light shielding layer (62) and polycrystalline silicon layer (64) of backing layer (611), polycrystalline silicon layer (64) upper surface is provided with medium layer (63) of covering polycrystalline silicon layer (64), medium layer (63) upper surface one side is provided with semiconductor layer (65), semiconductor layer (65) upper surface is provided with and covers semiconductor layer (65) with gate insulating layer (66) of medium layer (63), gate insulating layer (66) upper surface is provided with grid (67), grid (67) upper surface is provided with and covers grid (67) with interlayer insulating layer (68) of gate insulating layer (66), interlayer insulating layer (68) upper surface is provided with and covers polycrystalline silicon layer (64), source electrode (69) and drain electrode (610) are all in proper order run through drain electrode (610), and the source electrode (69) and the drain electrode (610) are respectively abutted against two ends of the semiconductor layer (65);
an insulating layer (1), wherein the insulating layer (1) is arranged on the upper surface of the TFT array substrate (6), and the lower surface of the insulating layer (1) is provided with a hollow groove (11) for accommodating the source electrode (69) and the drain electrode (610);
the signal lead (3) is arranged on the upper surface of the insulating layer (1), the signal lead (3) penetrates through the insulating layer (1) to the empty groove (11), and the signal lead (3) is electrically connected with the source electrode (69) and the drain electrode (610); the dielectric layer (63) comprises an alumina layer (631) and an aluminum nitride layer (632) which are sequentially arranged from bottom to top.
2. The TFT device structure for an OLED display panel as claimed in claim 1, wherein: the utility model discloses a pixel definition layer, including insulating layer (1), signal lead (3), insulating layer (1) upper surface is provided with cover insulating layer (1) with flat layer (2) of signal lead (3), flat layer (2) upper surface just is located signal lead (3) top is provided with OLED module (4), flat layer (2) upper surface just is located one side of OLED module (4) is provided with driving electrode (7), driving electrode (7) upper surface is provided with and covers driving electrode (7) and part pixel definition layer (5) of flat layer (2), pixel definition layer (5) top joint has dielectric layer (8) that upwards protrudes, dielectric layer (8) upper surface is provided with sensing electrode (9).
3. The TFT device structure for an OLED display panel as claimed in claim 2, wherein: the OLED module (4) comprises an anode (41) which is clamped on the upper surface of the flat layer (2), two through leading-out holes (22) are formed in the upper surface of the flat layer (2), two ends of the anode (41) can be respectively extended into the two leading-out holes (22), an OLED device layer (42) is arranged on the upper surface of the anode (41), and a cathode (43) is arranged on the upper surface of the OLED device layer (42).
4. A TFT device structure for an OLED display panel as claimed in claim 3 wherein: one end of the cathode (43) is vertically provided with a light extraction layer (10), and the light extraction layer (10) is closely attached to the side wall of the pixel definition layer (5).
5. A TFT device structure for an OLED display panel as claimed in claim 3 wherein: clamping grooves (21) are formed in one side of the upper surface of the flat layer (2) and one side of the driving electrode (7), and clamping blocks (411) matched with the clamping grooves (21) are fixed on the anode (41).
6. A TFT device structure for an OLED display panel as claimed in claim 3 wherein: the pixel definition layer (5) top upper surface offer with holding groove (51) of dielectric layer (8) looks adaptation, L groove (52) have been seted up respectively to the both sides of holding groove (51) tank bottom, two corners in dielectric layer (8) bottom are provided with respectively L piece (81) of L groove (52) looks adaptation.
7. The TFT device structure for an OLED display panel as claimed in claim 1, wherein: the gate electrode (67), the source electrode (69), and the drain electrode (610) have a single-layer structure composed of a molybdenum layer or a double-layer structure composed of a molybdenum layer and an aluminum layer stacked.
8. The TFT device structure for an OLED display panel as claimed in claim 1, wherein: the light shielding layer (62) is trapezoidal.
9. The TFT device structure for an OLED display panel as claimed in claim 1, wherein: the thickness of the grid electrode (67) is 2000-3000 angstroms, and the material of the grid electrode (67) is molybdenum.
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