CN111953309B - 表面声波元件、滤波电路以及电子零件 - Google Patents

表面声波元件、滤波电路以及电子零件 Download PDF

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Publication number
CN111953309B
CN111953309B CN202010381485.9A CN202010381485A CN111953309B CN 111953309 B CN111953309 B CN 111953309B CN 202010381485 A CN202010381485 A CN 202010381485A CN 111953309 B CN111953309 B CN 111953309B
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Prior art keywords
acoustic wave
surface acoustic
electrode
thickness
material layer
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CN202010381485.9A
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Chinese (zh)
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CN111953309A (zh
Inventor
松冈直人
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Hefei Xintou Microelectronics Co ltd
NDK Saw Devices Inc
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NDK Saw Devices Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02259—Driving or detection means
    • H03H9/02275—Comb electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6406—Filters characterised by a particular frequency characteristic

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN202010381485.9A 2019-05-16 2020-05-08 表面声波元件、滤波电路以及电子零件 Active CN111953309B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-092973 2019-05-16
JP2019092973A JP7292100B2 (ja) 2019-05-16 2019-05-16 弾性表面波素子、フィルタ回路及び電子部品

Publications (2)

Publication Number Publication Date
CN111953309A CN111953309A (zh) 2020-11-17
CN111953309B true CN111953309B (zh) 2023-08-18

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Country Link
US (1) US11088671B2 (https=)
JP (1) JP7292100B2 (https=)
CN (1) CN111953309B (https=)

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WO2019138812A1 (ja) * 2018-01-12 2019-07-18 株式会社村田製作所 弾性波装置、マルチプレクサ、高周波フロントエンド回路、及び通信装置
US11606078B2 (en) 2019-07-18 2023-03-14 Skyworks Solutions, Inc. Acoustic wave resonator with rotated and tilted interdigital transducer electrode
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) * 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN116508261A (zh) 2020-12-18 2023-07-28 株式会社村田制作所 弹性波装置及梯型滤波器
CN112653417A (zh) * 2020-12-18 2021-04-13 广东广纳芯科技有限公司 声表面波谐振器及该声表面波谐振器的制造方法
WO2022168797A1 (ja) * 2021-02-04 2022-08-11 株式会社村田製作所 弾性波装置
CN116584040A (zh) * 2021-02-04 2023-08-11 株式会社村田制作所 弹性波装置
WO2022264933A1 (ja) * 2021-06-16 2022-12-22 株式会社村田製作所 弾性波装置
US12525951B2 (en) 2021-10-01 2026-01-13 Skyworks Solutions, Inc. Surface acoustic wave device having a trapezoidal electrode
WO2023058767A1 (ja) * 2021-10-08 2023-04-13 株式会社村田製作所 弾性波装置
US20230208385A1 (en) 2021-12-28 2023-06-29 Skyworks Solutions, Inc. Acoustic wave device with tilted interdigital transducer electrode
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US12470199B2 (en) 2022-01-13 2025-11-11 Skyworks Solutions, Inc. Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US20230344411A1 (en) 2022-04-15 2023-10-26 Skyworks Solutions, Inc. Multiplexer with dies of different acoustic velocity
WO2023204250A1 (ja) * 2022-04-20 2023-10-26 株式会社村田製作所 弾性波装置
CN117200743A (zh) * 2022-05-31 2023-12-08 华为技术有限公司 滤波器及电子设备
CN117375554A (zh) * 2022-06-30 2024-01-09 华为技术有限公司 声表面波滤波器、装置和电子设备
JP2024047202A (ja) * 2022-09-26 2024-04-05 株式会社村田製作所 弾性波装置
CN115395918B (zh) * 2022-10-27 2023-08-29 中国科学技术大学 声波谐振器及其设计方法、制造方法
WO2024119507A1 (zh) * 2022-12-09 2024-06-13 中国科学技术大学 体声波谐振器及其制备方法
CN116827298A (zh) * 2023-06-28 2023-09-29 中国科学技术大学 一种声波谐振器
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件
CN117498826B (zh) * 2023-11-03 2025-10-21 上海馨欧集成微电有限公司 一种声波谐振器、滤波器及通信器件
CN119182379B (zh) * 2023-12-27 2025-10-21 上海馨欧集成微电有限公司 一种声波滤波器及其制备方法
WO2026004345A1 (ja) * 2024-06-24 2026-01-02 株式会社村田製作所 弾性波装置
CN119210385A (zh) * 2024-09-19 2024-12-27 无锡市好达电子股份有限公司 弹性波装置、滤波器装置及多工器
CN121770482A (zh) * 2024-09-29 2026-03-31 华为技术有限公司 谐振器、芯片、电子设备
CN119582799B (zh) * 2024-10-29 2025-12-02 锐石创芯(重庆)微电子有限公司 声表面波器件、射频前端模组和电子设备

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JP2011166259A (ja) * 2010-02-05 2011-08-25 Murata Mfg Co Ltd 弾性表面波装置

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JP4894861B2 (ja) 2006-12-25 2012-03-14 株式会社村田製作所 弾性境界波装置
CN103262410B (zh) 2010-12-24 2016-08-10 株式会社村田制作所 弹性波装置及其制造方法
WO2013141168A1 (ja) * 2012-03-23 2013-09-26 株式会社村田製作所 弾性波装置及びその製造方法
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JP2011166259A (ja) * 2010-02-05 2011-08-25 Murata Mfg Co Ltd 弾性表面波装置

Also Published As

Publication number Publication date
CN111953309A (zh) 2020-11-17
JP7292100B2 (ja) 2023-06-16
US11088671B2 (en) 2021-08-10
US20200366270A1 (en) 2020-11-19
JP2020188408A (ja) 2020-11-19

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Effective date of registration: 20240717

Address after: No. 63, suzulanqiu CHO, Hakodate, Hokkaido, Japan (042-0958)

Patentee after: NDK sound meter filter Co.,Ltd.

Country or region after: Japan

Patentee after: Hefei Xintou Microelectronics Co.,Ltd.

Country or region after: China

Address before: No. 63, suzulanqiu CHO, Hakodate, Hokkaido, Japan (042-0958)

Patentee before: NDK sound meter filter Co.,Ltd.

Country or region before: Japan

TR01 Transfer of patent right