CN111933729A - Method for manufacturing low dark current silicon-based germanium detector - Google Patents
Method for manufacturing low dark current silicon-based germanium detector Download PDFInfo
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- CN111933729A CN111933729A CN202010830017.5A CN202010830017A CN111933729A CN 111933729 A CN111933729 A CN 111933729A CN 202010830017 A CN202010830017 A CN 202010830017A CN 111933729 A CN111933729 A CN 111933729A
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 137
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only Ge
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for manufacturing a low dark current silicon-based germanium detector, which comprises the steps of etching a silicon groove on a silicon substrate, epitaxially growing a pure germanium layer in the silicon groove, finishing waveguide structure etching on the pure germanium layer to form a germanium waveguide structure, then spin-coating an adhesion promoter and a negative photoresist on the germanium surface of the germanium waveguide structure, and sequentially carrying out exposure and baking; and finally, cleaning the germanium surface and manufacturing the silicon-based germanium detector. In the invention, after the germanium waveguide structure is formed, the negative photoresist is covered on the surface of the germanium material, the germanium material is corroded by utilizing the slight oxidability of the negative photoresist, and an etching damage layer on the surface of the germanium is removed, so that the dark current caused by waveguide etching damage is reduced; the negative photoresist mainly reacts with defects with high activity, such as dangling bonds on the surface of germanium, and the like, so that the negative photoresist has low corrosivity on the germanium, only a damaged layer on the surface can be removed, the rate is not influenced by the doping type of the germanium, the corrosion effect is stable, and the appearance of the germanium detector cannot be influenced.
Description
Technical Field
The invention relates to the field of silicon-based germanium detectors, in particular to a manufacturing method of a low-dark-current silicon-based germanium detector.
Background
The silicon-based germanium detector is a waveguide type detector, and as shown in fig. 1, such a detector generally requires that a pure germanium layer is epitaxially grown on an SOI substrate, waveguide structure etching is performed on the pure germanium layer, and then a germanium detector is manufactured based on a germanium waveguide structure. The waveguide etching in the preparation of the waveguide type silicon-based germanium detector can adopt a Reactive Ion Etching (RIE) etching machine for dry etching, the reactive ion etching is carried out in a vacuum system through molecular gas plasma, and the anisotropic etching is realized by utilizing ion-induced chemical reaction, namely, ion energy is utilized to form an easily-etched damage layer on the surface of an etched layer and promote the chemical reaction, so that the aim of removing partial materials to form a specific pattern is fulfilled. However, the etching process introduces plasma damage on the surface of the pure germanium layer, which causes a large number of defects such as dangling bonds, vacancies, dislocations and the like, and causes the dark current of the silicon-based germanium detector to increase, and the higher the substrate bias voltage applied in the etching, the higher the etching rate and the damage to the surface of the material.
The wet etching method is a commonly used method for removing a surface damage layer, and adopts acid liquor or alkali liquor to perform chemical reaction with the surface of a material to remove the surface layer. However, since the etching solution has a high etching rate to germanium and is influenced by the doping concentration of germanium, the etching amount of germanium is difficult to control in the actual process, and excessive etching is easily caused to cause the geometric morphology of the germanium detector to deviate from the design value, thereby influencing the photoelectric parameters of the germanium detector.
Disclosure of Invention
The invention aims to provide a method for manufacturing a silicon-based germanium detector, which removes the surface damage of a germanium layer by using the slight corrosion action of the oxidability of photoresist on germanium so as to reduce dark current.
The technical scheme of the invention is as follows:
a manufacturing method of a low dark current silicon-based germanium detector comprises the following steps:
growing a layer of SiO on a silicon substrate2Masking;
removing SiO in the region of the silicon trench by photolithography2A mask, exposing the silicon groove area, and etching the silicon groove area to form a silicon groove;
epitaxially growing a pure germanium layer in the silicon groove, and etching the waveguide structure on the pure germanium layer by adopting a reactive ion etching method to form a germanium waveguide structure;
spin coating an adhesion promoter on the germanium surface of the germanium waveguide structure;
spin-coating a negative photoresist on the germanium surface of the germanium waveguide structure;
exposing the germanium surface of the germanium waveguide structure;
baking the germanium waveguide structure;
cleaning the germanium surface of the germanium waveguide structure;
and manufacturing the silicon-based germanium detector based on the germanium waveguide structure.
Furthermore, the silicon substrate is an SOI substrate and comprises a bottom silicon layer, a buried oxide layer and a top silicon layer.
Further, the thickness of the spin-coating negative photoresist is 1-4 μm.
Furthermore, the exposure amount for exposing the germanium surface of the germanium waveguide structure is 150-500 mJ/cm2。
Further, the temperature for baking the germanium waveguide structure is 100-110 ℃, the time is 60-90 s, and the germanium waveguide structure is kept stand for 2-12 hours after being baked.
Further, the method for cleaning the germanium surface of the germanium waveguide structure comprises the following steps: and removing the negative photoresist on the germanium surface of the germanium waveguide structure by using an oxygen plasma photoresist remover, and cleaning the germanium surface of the germanium waveguide structure by using acetone or absolute ethyl alcohol.
Has the advantages that: according to the invention, after the waveguide structure is etched on the pure germanium layer to form the germanium waveguide structure, the negative photoresist is covered on the surface of the germanium material, the germanium material is corroded by the slight oxidability of the negative photoresist, and the etching damage layer on the surface of the germanium is removed, so that the dark current caused by waveguide etching damage is reduced. Compared with the wet etching of the traditional process, the negative photoresist mainly reacts with the defects with higher activity, such as dangling bonds on the surface of germanium and the like, has low corrosivity on germanium, only removes a damaged layer on the surface, and has a rate not influenced by the doping type of the germanium, so that the etching effect is more stable, and the appearance of the germanium detector cannot be influenced.
Drawings
FIG. 1 is a schematic diagram of the etching damage to the germanium surface when a waveguide structure is etched on a pure germanium layer;
FIG. 2 is a flow chart of a preferred embodiment of the present invention;
FIG. 3 is a schematic illustration of a germanium waveguide structure after spin coating a negative photoresist on the germanium surface.
In the figure: 1. bottom silicon layer, 2 buried oxide layer, 3 top silicon layer, 4 SiO2Mask, 5 pure germanium layer, 6 negative photoresist.
Detailed Description
In order to make the technical solutions in the embodiments of the present invention better understood and make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the term "connected" is to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, or a communication between two elements, or may be a direct connection or an indirect connection through an intermediate medium, and a specific meaning of the term may be understood by those skilled in the art according to specific situations.
As shown in fig. 2, a preferred embodiment of the method for manufacturing a low dark current silicon-based germanium detector of the present invention comprises the following steps:
growing a layer of SiO on a silicon substrate2A mask 4; the silicon substrate is preferably an SOI substrate and comprises a bottom silicon layer 1, a buried oxide layer 2 and a top silicon layer 3.
Removing SiO in the region of the silicon trench by photolithography2And masking 4 to expose the silicon groove area, and etching the exposed area downwards to form the silicon groove.
And epitaxially growing a pure germanium layer 5 in the silicon groove, and performing waveguide structure etching on the pure germanium layer 5 by adopting a reactive ion etching method to form a germanium waveguide structure. Since plasma damage is inevitably introduced to the surface of the pure germanium layer 5 during etching, a large number of defects such as dangling bonds, vacancies, dislocations and the like are caused, and if the damaged part of the surface of the pure germanium layer 5 is not removed, the dark current of the silicon-based germanium detector is increased.
And spin coating an adhesion promoter on the germanium surface of the germanium waveguide structure, wherein the adhesion promoter preferably uses HMDS.
As shown in FIG. 3, a negative photoresist 6 is spin-coated on the germanium surface of the germanium waveguide structure, preferably AZ2020 is used for the negative photoresist 6, and the thickness of the spin-coated negative photoresist is 1-4 μm, preferably 2 μm.
Exposing the germanium surface of the germanium waveguide structure with the exposure amount of 150-500 mJ/cm2Preferably 270mJ/cm2The negative photoresist 6 reacts with the defects with higher activity, such as dangling bonds on the surface of the germanium, and the like, so that the etching damage layer on the surface of the germanium is removed.
Baking the germanium waveguide structure at 100-110 ℃, preferably at 110 ℃; the baking time is 60-90 s, preferably 60 s; and standing for 2-12 hours, preferably 4 hours after baking.
And cleaning the germanium surface of the germanium waveguide structure. And removing the negative photoresist 6 by using an oxygen plasma degumming machine, cleaning the germanium surface of the germanium waveguide structure by using acetone or absolute ethyl alcohol, removing a damaged layer of the germanium surface which reacts with the negative photoresist 6, and exposing the germanium surface without etching damage.
And manufacturing the silicon-based germanium detector based on the cleaned germanium waveguide structure.
In this embodiment, after the waveguide structure is etched on the pure germanium layer, the negative photoresist 6 is covered on the surface of the germanium material, and the germanium material is corroded by the slight oxidation of the negative photoresist 6 to remove the etching damage layer on the surface of the germanium, so that the dark current caused by the waveguide etching damage is reduced, and the dark current of the existing silicon-based germanium detector can be reduced from 1.5 μ a to 300 nA.
In addition, the negative photoresist 6 mainly reacts with defects with high activity, such as dangling bonds on the surface of germanium, has low corrosivity on the germanium, only removes a damaged layer on the surface of the germanium, and has a rate not influenced by the doping type of the germanium, so that the corrosion effect of the negative photoresist is more stable compared with that of the traditional corrosion process, and the appearance of a germanium detector cannot be influenced.
The detector is manufactured based on a germanium waveguide structure, which is the prior art and is not described herein in detail; the undescribed parts of the present invention are consistent with the prior art, and are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.
Claims (6)
1. A manufacturing method of a low dark current silicon-based germanium detector is characterized by comprising the following steps:
growing a layer of SiO on a silicon substrate2Masking;
removing SiO in the region of the silicon trench by photolithography2A mask, exposing the silicon groove area, and etching the silicon groove area to form a silicon groove;
epitaxially growing a pure germanium layer in the silicon groove, and etching the waveguide structure on the pure germanium layer by adopting a reactive ion etching method to form a germanium waveguide structure;
spin coating an adhesion promoter on the germanium surface of the germanium waveguide structure;
spin-coating a negative photoresist on the germanium surface of the germanium waveguide structure;
exposing the germanium surface of the germanium waveguide structure;
baking the germanium waveguide structure;
cleaning the germanium surface of the germanium waveguide structure;
and manufacturing the silicon-based germanium detector based on the germanium waveguide structure.
2. The method of claim 1, wherein the silicon substrate is an SOI substrate comprising a bottom silicon layer, a buried oxide layer and a top silicon layer.
3. The method of claim 1, wherein the spin-on negative photoresist has a thickness of 1-4 μm.
4. The method for manufacturing a low dark current silicon-based germanium detector according to claim 1, wherein the exposure dose for exposing the germanium surface of the germanium waveguide structure is 150-500 mJ/cm2。
5. The method for manufacturing the silicon-based germanium detector with low dark current as claimed in claim 1, wherein the germanium waveguide structure is baked at a temperature of 100-110 ℃ for 60-90 s and left to stand for 2-12 hours after baking.
6. The method for manufacturing the silicon-based germanium detector with low dark current according to claim 1, wherein the method for cleaning the germanium surface of the germanium waveguide structure comprises the following steps: and removing the negative photoresist on the germanium surface of the germanium waveguide structure by using an oxygen plasma photoresist remover, and cleaning the germanium surface of the germanium waveguide structure by using acetone or absolute ethyl alcohol.
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| CN117239002A (en) * | 2023-11-14 | 2023-12-15 | 无锡芯光互连技术研究院有限公司 | Vertical germanium-silicon photoelectric detector and preparation method thereof |
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