CN111916376A - 硅片刻蚀设备 - Google Patents
硅片刻蚀设备 Download PDFInfo
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- CN111916376A CN111916376A CN202010825240.0A CN202010825240A CN111916376A CN 111916376 A CN111916376 A CN 111916376A CN 202010825240 A CN202010825240 A CN 202010825240A CN 111916376 A CN111916376 A CN 111916376A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000005530 etching Methods 0.000 title claims abstract description 31
- 239000006260 foam Substances 0.000 claims abstract description 16
- 229920000742 Cotton Polymers 0.000 claims description 6
- 239000012459 cleaning agent Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 28
- 230000005540 biological transmission Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
Abstract
本发明公开了一种硅片刻蚀设备，包括机架，所述机架上设置有传送装置和刻蚀装置，所述刻蚀装置设置在传送装置一侧，所述刻蚀装置包括驱动装置、安装板和泡棉棒，所述安装板安装在机架上，所述泡棉棒转动设置在所述安装板两侧，所述驱动装置驱动泡棉棒转动，所述泡棉棒下端浸泡在清洗剂池内，所述传送装置将硅片传送至刻蚀装置工位，驱动装置驱动泡棉棒转动对硅片两侧进行清洗。本发明可以消除侧面PN结，使得硅片充分使用，有效避免做成电池片的漏电现象。
Description
技术领域
本发明涉及太阳能电池生产设备，具体涉及一种硅片刻蚀设备。
背景技术
目前硅片生产过程中，常规制造晶体硅太阳能电池包括制绒、扩散、清洗刻蚀、PECVD、丝网印刷工序等。其中，在电池片的扩散工序中，通常会产生一层含磷的二氧化硅，俗称磷硅玻璃，并且在硅片边缘也形成一层PN结，边缘的这层PN结会在硅片做成电池片后导通电池片的上下两极而发生漏电现象。
发明内容
发明目的：本发明的目的是提供一种硅片刻蚀设备，解决硅片扩散工序中在侧边缘形成PN结，容易造成漏电的问题。
技术方案：本发明所述的硅片刻蚀设备，包括机架，所述机架上设置有传送装置和刻蚀装置，所述刻蚀装置设置在传送装置一侧，所述刻蚀装置包括驱动装置、安装板和泡棉棒，所述安装板安装在机架上，所述泡棉棒转动设置在所述安装板两侧，所述驱动装置驱动泡棉棒转动，所述泡棉棒下端浸泡在清洗剂池内，所述传送装置将硅片传送至刻蚀装置工位，驱动装置驱动泡棉棒转动对硅片两侧进行清洗。
为了方便传送硅片，所述传送装置包括若干滚筒和电机，若干滚筒并排设置在机架内，所述电机通过皮带驱动滚筒转动。
为了限位硅片和感应硅片，所述传送装置硅片入口处设置有硅片限位块和光电传感器。
为了方便驱动泡棉棒转动，所述驱动装置包括电机、联轴器和转轴，所述电机通过联轴器和转轴连接，所述转轴通过皮带与所述泡棉棒连接。
为了减轻设备重量，所述安装架上设置有通槽。
方便收集刻蚀后的硅片，所述机架上对应传送装置硅片出口处设置有硅片收集盒。
有益效果：本发明可以消除侧面PN结，使得硅片充分使用，有效避免做成电池片的漏电现象。
附图说明
图1是本发明的结构示意图；
图2是本发明专利的底部结构示意图；
图3是刻蚀装置的结构示意图；
图4是传送装置的结构示意图。
具体实施方式
下面结合附图对本发明进行进一步说明。
如图1-3所示，本发明公开的硅片刻蚀设备，包括机架1，机架1上设置有传送装置2和刻蚀装置3，传送装置2包括若干滚筒和电机4，若干滚筒并排设置在机架1内，电机4通过皮带驱动滚筒转动，传送装置硅片入口处设置有硅片限位块21和光电传感器22，机架1上对应传送装置硅片出口处设置有硅片收集盒，刻蚀装置3设置在传送装置2一侧，刻蚀装置3包括驱动装置、安装板31和泡棉棒32，安装板31安装在机架1上，泡棉棒32设置在安装板31两侧，泡棉棒32下端浸泡在清洗剂池内，驱动装置包括电机4、联轴器33和转轴34，电机4通过联轴器44和转轴34连接，转轴34通过皮带与泡棉棒32连接，安装架上设置有通槽。
使用本发明时，硅片从传送装置硅片入口进入，限位块进行限位放置左右失衡，传送装置将硅片传送至刻蚀装置工位，驱动装置通过皮带驱动浸了化学清洁剂的泡棉棒转动对硅片两侧进行清洗。
Claims (6)
1.一种硅片刻蚀设备，其特征在于，包括机架(1)，所述机架上设置有传送装置(2)和刻蚀装置(3)，所述刻蚀装置(3)设置在传送装置(2)一侧，所述刻蚀装置(3)包括驱动装置、安装板(31)和泡棉棒(32)，所述安装板(31)安装在机架(1)上，所述泡棉棒(32)转动设置在所述安装板(31)两侧，所述驱动装置驱动泡棉棒(32)转动，所述泡棉棒(32)下端浸泡在清洗剂池内，所述传送装置(2)将硅片传送至刻蚀装置工位，驱动装置驱动泡棉棒(32)转动对硅片两侧进行清洗。
2.根据权利要求1所述的硅片刻蚀设备，其特征在于，所述传送装置包括若干滚筒和电机，若干滚筒并排设置在机架内，所述电机通过皮带驱动滚筒转动。
3.根据权利要求1所述的硅片刻蚀设备，其特征在于，所述传送装置硅片入口处设置有硅片限位块(21)和光电传感器(22)。
4.根据权利要求1所述的硅片刻蚀设备，其特征在于，所述驱动装置包括电机(4)、联轴器(33)和转轴(34)，所述电机(4)通过联轴器(33)和转轴(34)连接，所述转轴(34)通过皮带与所述泡棉棒(32)连接。
5.根据权利要求1所述的硅片刻蚀设备，其特征在于，所述安装架上设置有通槽。
6.权利要求1所述的硅片刻蚀设备，其特征在于，所述机架上对应传送装置硅片出口处设置有硅片收集盒。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010825240.0A CN111916376A (zh) | 2020-08-17 | 2020-08-17 | 硅片刻蚀设备 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010825240.0A CN111916376A (zh) | 2020-08-17 | 2020-08-17 | 硅片刻蚀设备 |
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| CN111916376A true CN111916376A (zh) | 2020-11-10 |
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| CN202010825240.0A Withdrawn CN111916376A (zh) | 2020-08-17 | 2020-08-17 | 硅片刻蚀设备 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113731888A (zh) * | 2021-08-10 | 2021-12-03 | 郑州旭飞光电科技有限公司 | 电机安装支架、驱动机构和基板玻璃清洗机 |
| CN116779494A (zh) * | 2023-08-18 | 2023-09-19 | 苏州晶洲装备科技有限公司 | 刻蚀装置、刻蚀方法及电池片生产设备 |
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2020
- 2020-08-17 CN CN202010825240.0A patent/CN111916376A/zh not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113731888A (zh) * | 2021-08-10 | 2021-12-03 | 郑州旭飞光电科技有限公司 | 电机安装支架、驱动机构和基板玻璃清洗机 |
| CN116779494A (zh) * | 2023-08-18 | 2023-09-19 | 苏州晶洲装备科技有限公司 | 刻蚀装置、刻蚀方法及电池片生产设备 |
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Application publication date: 20201110 |