CN111915998B - Micro light-emitting diode display panel - Google Patents
Micro light-emitting diode display panel Download PDFInfo
- Publication number
- CN111915998B CN111915998B CN202010839783.8A CN202010839783A CN111915998B CN 111915998 B CN111915998 B CN 111915998B CN 202010839783 A CN202010839783 A CN 202010839783A CN 111915998 B CN111915998 B CN 111915998B
- Authority
- CN
- China
- Prior art keywords
- conductive patterns
- display panel
- transparent conductive
- emitting diode
- micro light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Abstract
The invention provides a micro light-emitting diode display panel which comprises a substrate, a plurality of first signal lines, a plurality of transparent conductive patterns, a plurality of metal conductive patterns, a plurality of first connecting pads, a plurality of second connecting pads and a plurality of micro light-emitting diode components. The first signal lines are arranged on the substrate. The plurality of transparent conductive patterns are separated from each other and distributed on the substrate. The metal conductive patterns and the transparent conductive patterns are alternately arranged on the substrate. The metal conductive patterns are electrically connected between the transparent conductive patterns. The first connecting pads are respectively electrically connected with the first signal lines. The second pads are electrically connected with the transparent conductive patterns. The micro light emitting diode components are respectively electrically connected with one of the first connecting pads and one of the second connecting pads.
Description
Technical Field
The present disclosure relates to display panels, and particularly to a micro light emitting diode display panel.
Background
With the continuous evolution of display technology, more diverse visual experiences have changed the way people get information. Displays play an extremely important role in advertising and service information in shopping malls, dynamic information on traffic stations, merchandise display and information presentation in vending machines, or traffic information display in shops, and the like. Transparent displays have become a major development focus of relevant vendors to satisfy more diverse usage patterns, such as more intuitive information presentation and immersive visual experience.
Generally, the display pixels of a micro led display panel are formed by at least one micro led. One electrode of each of the micro light emitting diodes is electrically connected to each other to have a common potential through a common electrode extending within the display area. Currently, in the fabrication of common electrodes, Indium Tin Oxide (ITO) with high work function, stable property and high light transmittance, which is between 4.5eV and 5.3eV, is mostly selected as an electrode material. However, the circuits and components on the circuit substrate are not resistant to high temperature, so that the common electrode cannot be subjected to a high temperature annealing (annealing) process, and the transmittance and conductivity of the common electrode cannot be improved.
Disclosure of Invention
The invention provides a micro light-emitting diode display panel which has better transmittance and driving electrical property.
The invention discloses a micro light-emitting diode display panel, which comprises a substrate, a plurality of first signal lines, a plurality of transparent conductive patterns, a plurality of metal conductive patterns, a plurality of first connecting pads, a plurality of second connecting pads and a plurality of micro light-emitting diode components. The first signal lines are arranged on the substrate. The plurality of transparent conductive patterns are separated from each other and distributed on the substrate. The metal conductive patterns and the transparent conductive patterns are alternately arranged on the substrate. The metal conductive patterns are electrically connected between the transparent conductive patterns. The first connecting pads are respectively electrically connected with the first signal lines. The second pads are electrically connected with the transparent conductive patterns. The micro light emitting diode components are respectively electrically connected with one of the first connecting pads and one of the second connecting pads.
In an embodiment of the invention, the plurality of micro light emitting diode elements of the micro light emitting diode display panel are respectively disposed between the plurality of transparent conductive patterns and do not overlap the plurality of transparent conductive patterns.
In an embodiment of the invention, each of the second pads of the micro led display panel is electrically connected to or integrated with one of the plurality of metal conductive patterns.
In an embodiment of the invention, the micro led display panel further includes an insulating layer disposed between the transparent conductive pattern and the metal conductive pattern. The insulating layer is provided with a plurality of openings positioned among the plurality of transparent conductive patterns, and the plurality of metal conductive patterns are respectively positioned in the openings of the insulating layer.
In an embodiment of the invention, the plurality of metal conductive patterns, the plurality of first pads and the plurality of second pads of the micro light emitting diode display panel belong to the same film layer.
In an embodiment of the invention, at least one of the micro led elements of the micro led display panel is overlapped with one of the plurality of transparent conductive patterns.
In an embodiment of the invention, the number of the micro led assemblies of the micro led display panel overlapped with one of the transparent conductive patterns is more than three, and the light emitting colors of the micro led assemblies are different.
In an embodiment of the invention, two adjacent transparent conductive patterns of the micro led display panel are connected to each other through a metal conductive pattern, and any one of the second pads overlaps one of the transparent conductive patterns, and the second pads and the metal conductive pattern are integrated.
In an embodiment of the invention, the plurality of transparent conductive patterns of the micro light emitting diode display panel are located between the plurality of metal conductive patterns and the substrate.
In an embodiment of the invention, the micro led display panel further includes a plurality of transistor elements and a plurality of second signal lines. The transistor components are electrically connected with the micro light-emitting diode components and the first signal wires. The second signal lines are electrically connected with the transistor components and are electrically independent from the first signal lines. The metal conductive patterns and the second signal lines belong to the same film layer.
In an embodiment of the invention, the plurality of second signal lines of the micro light emitting diode display panel are not overlapped with the plurality of transparent conductive patterns.
In view of the above, in the micro led display panel according to an embodiment of the invention, the conductive structure electrically connected to the second pads is composed of a plurality of transparent conductive patterns and metal conductive patterns alternately arranged. Since the transparent conductive patterns are structurally separated from each other, the overall transmittance of the micro light emitting diode display panel can be increased. On the other hand, the metal conductive patterns are used for electrically bridging the transparent conductive patterns, so that the conductivity of the conductive structure can be increased, and the driving electrical property of the micro light-emitting diode display panel is further improved.
Drawings
FIG. 1 is a schematic top view of a micro light emitting diode display panel according to a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the micro LED display panel of FIG. 1;
FIG. 3 is a simplified circuit diagram of a pixel of the micro LED display panel of FIG. 1;
FIG. 4 is a schematic cross-sectional view of a micro light emitting diode display panel according to a second embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a micro light emitting diode display panel according to a third embodiment of the present invention;
FIG. 6 is a schematic top view of a micro LED display panel according to a fourth embodiment of the present invention;
FIG. 7 is a schematic top view of a micro LED display panel according to a fifth embodiment of the present invention;
FIG. 8 is a schematic top view of a micro LED display panel according to a sixth embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of the micro LED display panel of FIG. 8;
fig. 10 is a schematic top view of a micro led display panel according to a seventh embodiment of the invention.
Description of the reference numerals
10. 10A, 10B, 11, 12, 13, 14: a micro light emitting diode display panel;
100: a substrate;
110. 110A, 110B, 110C, 110D, 110E: an insulating layer;
110 op: an opening;
110t, 115 t: a contact window;
120. 120A: an interlayer insulating layer;
150: welding flux;
200: a micro light emitting diode assembly;
201: a first electrode;
202: a second electrode;
205: an insulating layer;
210: an epitaxial structure;
211: a first type semiconductor layer;
212: a light emitting layer;
213: a second type semiconductor layer;
BP1, BP1-A, BP 1-A': a first pad;
BP2, BP2-A, BP 2-A': a second pad;
ca: a capacitor;
CS, CS', CS-A, CS-B, CS-C: a conductive structure;
d1, D2: a drain electrode;
g1, G2: a gate electrode;
MCP, MCP', MCP ", MCP-A, MCP-B, MCP-C: a metal conductive pattern;
PA: a pixel region;
PC: a pixel circuit;
PX: a pixel structure;
s1, S2: a source electrode;
SL 1: a first signal line;
SL 2: a second signal line;
SL 3: a third signal line;
td, Ts: a transistor element;
TCP, TCP ", TCP-A, TCP-B, TCP-C: a transparent conductive pattern;
x, Y, Z: direction;
A-A ', B-B', C-C ', D-D': and (6) cutting lines.
Detailed Description
In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, "electrically connected" may mean that there are additional elements between the two elements.
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is a schematic top view of a micro led display panel according to a first embodiment of the invention. Fig. 2 is a schematic cross-sectional view of the micro led display panel of fig. 1. FIG. 2 corresponds to the section line A-A 'and the section line B-B' of FIG. 1. Fig. 3 is a schematic diagram of a pixel circuit of the micro light emitting diode display panel of fig. 1. In particular, for the sake of clarity, fig. 1 omits the interlayer insulating layer 120 of fig. 2 and the third signal line SL3, the capacitor Ca, the transistor device Td, and the transistor device Ts of fig. 3.
Referring to fig. 1, fig. 2 and fig. 3, the micro light emitting diode display panel 10 includes a substrate 100, and a plurality of first signal lines SL1, a plurality of second signal lines SL2, a conductive structure CS and a plurality of pixel structures PX disposed on the substrate 100. In the present embodiment, the first signal lines SL1 are arranged along the direction X and extend in the direction Y, and the second signal lines SL2 are arranged along the direction Y and extend in the direction X. More specifically, the first signal lines SL1 intersect with the second signal lines SL2 to define a plurality of pixel areas PA, and the pixel structures PX are respectively disposed in the pixel areas PA. The material of the substrate 100 is, for example, glass, quartz, or other suitable polymer material (e.g., polyimide, polycarbonate, or polyethylene terephthalate).
The conductive structure CS has a plurality of transparent conductive patterns TCP and a plurality of metal conductive patterns MCP alternately arranged, the transparent conductive patterns TCP are structurally separated from each other and distributed on the substrate 100, and the metal conductive patterns MCP and the transparent conductive patterns TCP are alternately arranged and electrically connected between the transparent conductive patterns TCP. In the present embodiment, the metal conductive patterns MCP and the transparent conductive patterns TCP may respectively form a plurality of conductive strings extending in the direction X, and the conductive strings arranged along the direction Y are electrically independent from each other, but the invention is not limited thereto. In other embodiments, the conductive strings may also be electrically connected to each other, for example: other metal conductive patterns MCP and the partial transparent conductive patterns TCP of the conductive strings may also be alternately arranged in the direction Y to electrically bridge the conductive strings.
The transparent conductive pattern TCP may be made of indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, very thin metals, carbon nanotubes, graphene, or a stack of at least two of the foregoing materials, or other suitable transparent conductive materials. For the sake of conductivity, the materials of the first signal line SL1, the second signal line SL2 and the metal conductive pattern MCP are generally metal materials. However, the invention is not limited thereto, and according to other embodiments, the first signal line SL1, the second signal line SL2 and the metal conductive pattern MCP may use other conductive materials, such as: an alloy, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or other suitable material, or a stacked layer of a metal material and other conductive materials.
Further, the pixel structure PX includes a micro light emitting diode assembly 200. The micro led assembly 200 is disposed between two adjacent transparent conductive patterns TCP, and electrically connects a corresponding one of the first signal lines SL1 and a corresponding one of the metal conductive patterns MCP. It should be noted that the transparent conductive patterns TCP respectively overlap the first signal lines SL1 in the normal direction (e.g., direction Z) of the substrate 100, and do not overlap the micro light emitting diode assemblies 200 of the pixel structures PX. Accordingly, the overall transmittance of the micro led display panel 10 can be increased.
In order to electrically connect the micro led device 200, the micro led display panel 10 further includes a plurality of pads (e.g., a first pad BP1 and a second pad BP2) disposed in the pixel regions PA. It should be noted that in the embodiment, the number of the pads in the same pixel area PA is exemplarily illustrated by two, which does not represent the limitation of the present invention, and in other embodiments, the number of the pads in the same pixel area PA may be adjusted to be four or more than six according to the number of the micro light emitting diode assemblies 200. That is, in other embodiments, the number of the micro led assemblies 200 in the same pixel area PA may be more than two.
As described above, the first pad BP1 and the second pad BP2 in the same pixel region PA are electrically connected to the corresponding one of the first signal lines SL1 and the corresponding one of the metal conductive patterns MCP, respectively. In the embodiment, the first signal line SL1, the first pad BP1, the second pad BP2 and the metal conductive pattern MCP may selectively belong to the same film layer, but not limited thereto. More specifically, the second pads BP2 and the metal conductive patterns MCP may be electrically connected or integrated to simplify the process steps, but not limited thereto.
In a further embodiment, the pixel structure PX further includes a pixel circuit PC (shown in fig. 3) for driving the micro light emitting diode assembly 200. The pixel circuit PC is electrically connected to a corresponding one of the first signal lines SL1, a corresponding one of the second signal lines SL2, and a corresponding one of the first pads BP 1. For example, the pixel circuit PC may include a transistor element Ts, a transistor element Td and a capacitor Ca, wherein the transistor element Ts is electrically connected between the transistor element Td and the second signal line SL2, and the transistor element Td is electrically connected between the micro light emitting diode element 200 (or the first pad BP1) and the first signal line SL 1.
In the present embodiment, the micro led display panel 10 further includes an insulating layer 110 and an interlayer insulating layer 120. The insulating layer 110 is disposed between the transparent conductive pattern TCP and the metal conductive pattern MCP, and the transparent conductive pattern TCP is disposed between the substrate 100 and the insulating layer 110, but the invention is not limited thereto. The insulating layer 110 is formed with a plurality of contact windows 110t to communicate with the transparent conductive patterns TCP, and each metal conductive pattern MCP is electrically connected to two adjacent transparent conductive patterns TCP through two corresponding contact windows 110 t.
On the other hand, the interlayer insulating layer 120 is disposed between the film layer of the first signal line SL1 (metal conductive pattern MCP) and the film layer of the second signal line SL2, for example. The insulating layer 110 and the interlayer insulating layer 120 are made of, for example, an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stacked layer of at least two of the above materials), an organic material, or other suitable materials, or a combination thereof.
In addition, the micro led display panel 10 further includes a plurality of third signal lines SL3, and the source S1, the drain D1 and the gate G1 of the transistor device Ts are respectively electrically connected to a corresponding one of the third signal lines SL3, the gate G2 of the transistor device Td and a corresponding one of the second signal lines SL 2. The source S2 and the drain D2 of the transistor device Td are electrically connected to a corresponding first signal line SL1 and the micro light emitting diode device 200 (or the first pad BP1) of the same pixel structure PX. The capacitor Ca is electrically connected between the gate G2 of the transistor device Td (or the drain D1 of the transistor device Ts) and a corresponding one of the first signal lines SL 1. In the present embodiment, the transistor device Ts is, for example, a switch transistor (switch transistor), the transistor device Td is, for example, a driving transistor (drive transistor), and the first signal line SL1, the second signal line SL2 and the third signal line SL3 can be respectively used for transmitting a power signal (e.g., Vdd), a gate driving signal and a switch signal.
That is, the driving circuit layer of the micro led display panel 10 of the present embodiment is active (active matrix), and the micro led assembly 200 is driven by the pixel circuit PC having the 2T1C structure. However, the invention is not limited thereto, and according to other embodiments, the micro led device 200 may be driven by the driving unit having the architecture of 1T1C, the architecture of 3T1C, the architecture of 3T2C, the architecture of 4T1C, the architecture of 4T2C, the architecture of 5T1C, the architecture of 5T2C, the architecture of 6T1C, the architecture of 6T2C, the architecture of 7T2C, or any possible architectures. In other embodiments, the driving circuit layer of the micro led display panel may not include the transistor element, i.e. the driving circuit layer is a passive matrix.
In the embodiment, the second pads BP2 arranged along the direction X are all electrically connected to the same conductive string of the conductive structure CS. That is, the conductive structure CS of the present embodiment can provide a common potential for the second pads BP2, and the common potential can be a ground potential or a fixed potential. It is worth mentioning that, since the plurality of transparent conductive patterns TCP of the conductive structure CS are structurally separated from each other, the overall transmittance of the micro light emitting diode display panel 10 can be increased. On the other hand, the plurality of metal conductive patterns MCP separated from each other are used to electrically bridge the transparent conductive patterns TCP, so as to increase the conductivity of the conductive structure CS, thereby improving the driving electrical property of the micro led display panel 10.
In the present embodiment, the micro light emitting diode device 200 includes a first electrode 201, a second electrode 202, an insulating layer 205 and an epitaxial structure 210. The first electrode 201 and the second electrode 202 are disposed on the same side of the epitaxial structure 210; that is, the micro led device 200 is a flip-chip type micro led device. In detail, the epitaxial structure 210 includes a first type semiconductor layer 211, a light emitting layer 212 and a second type semiconductor layer 213, the first electrode 201 penetrates through the insulating layer 205 to electrically connect to the first type semiconductor layer 211, and the second electrode 202 penetrates through the insulating layer 205, the first type semiconductor layer 211 and the light emitting layer 212 to electrically connect to the second type semiconductor layer 213. For example, two electrodes (e.g., the first electrode 201 and the second electrode 202) of the micro light emitting diode device 200 may be electrically connected to two corresponding pads (e.g., the first pad BP1 and the second pad BP2) by solder (solder)150, but not limited thereto. In other embodiments, the electrodes of the micro led device 200 may also be electrically connected to the corresponding pads through conductive bumps (conductive bumps), conductive paste (conductive paste), and other conductive materials.
The present invention will be described in detail below with reference to other embodiments, wherein like components are denoted by like reference numerals, and descriptions of the same technical contents are omitted, and reference is made to the foregoing embodiments for omitting details.
Fig. 4 is a schematic cross-sectional view of a micro led display panel according to a second embodiment of the invention. Referring to fig. 4, the difference between the micro led display panel 10A of the present embodiment and the micro led display panel 10 of fig. 2 is: the transparent conductive pattern and the metal conductive pattern are in different contact modes. Specifically, the insulating layer 110A of the micro light emitting diode display panel 10A has a plurality of openings 110 op. The openings 110op are located between the transparent conductive patterns TCP of the conductive structure CS' and expose opposite side portions of each transparent conductive pattern TCP. The plurality of metal conductive patterns MCP 'of the conductive structure CS' are respectively positioned in the openings 110op of the insulating layer 110A and directly cover the two side portions of each transparent conductive pattern TCP. Since the contact area between the metal conductive pattern MCP 'and the transparent conductive pattern TCP is increased, the conductivity of the conductive structure CS' can be further improved.
Fig. 5 is a schematic cross-sectional view of a micro led display panel according to a third embodiment of the invention. Referring to fig. 5, the difference between the micro led display panel 10B of the present embodiment and the micro led display panel 10 of fig. 2 is: the conductive structures are arranged differently. In the present embodiment, the metal conductive pattern MCP "of the conductive structure CS" is located between the substrate 100 and the transparent conductive pattern TCP ". More specifically, the insulating layer 110B of the micro led display panel 10B may be an interlayer insulating layer or a planarization layer located between the first signal line SL1 and the second signal line SL2 shown in fig. 1, the transparent conductive patterns TCP "are disposed above the insulating layer 110B and the conductive layer to which the signal lines belong, and two adjacent transparent conductive patterns TCP" penetrate through the insulating layer 110B to electrically connect the same metal conductive pattern MCP. Accordingly, the design flexibility and the process margin of the conductive structure CS ″ can be increased.
Fig. 6 is a schematic top view of a micro led display panel according to a fourth embodiment of the invention. Referring to fig. 6, the main differences between the micro led display panel 11 of the present embodiment and the micro led display panel 10 of fig. 1 are: the conductive structures are arranged differently. Specifically, the plurality of transparent conductive patterns TCP-A of the conductive structure CS-A of the micro led display panel 11 may overlap the plurality of micro led assemblies 200 in the normal direction (e.g., direction Z) of the substrate 100.
In the present embodiment, the number of the micro led assemblies 200 overlapped on the same transparent conductive pattern TCP- ｃA is three, and the three micro led assemblies 200 have different light emitting colors. For example, the three micro led devices 200 can emit light with colors selected from red, green and blue.
From another perspective, the pads (e.g., the first pad BP1- ｃA and the second pad BP2- ｃA) for bonding the micro led device 200 also overlap the transparent conductive pattern TCP- ｃA. The second pads BP2- ｃA are electrically connected to the corresponding transparent conductive patterns TCP- ｃA through the contact windows 110t of the insulating layer 110C, respectively. It is noted that any two adjacent transparent conductive patterns TCP- ｃA may be electrically bridged by the metal conductive pattern MCP- ｃA, and the metal conductive pattern MCP- ｃA and one of the second pads BP2- ｃA overlapping the two transparent conductive patterns TCP- ｃA may be integrated. Accordingly, the overall transmittance of the micro led display panel 11 can be further increased, and the process can be simplified.
Fig. 7 is a schematic top view of a micro led display panel according to a fifth embodiment of the invention. Referring to fig. 7, the difference between the micro led display panel 12 of the present embodiment and the micro led display panel 11 of fig. 6 is: the conductive structures are arranged differently. In the present embodiment, the number of the micro light emitting diode assemblies 200 overlapped with the transparent conductive pattern TCP-B is one. Therefore, the second pads BP2-a are electrically connected to the corresponding transparent conductive patterns TCP-B through the contact windows 110t of the insulating layer 110D, and each of the second pads BP2-a is integrated with the corresponding metal conductive pattern MCP-B. Accordingly, on the premise of considering the overall transmittance of the micro led display panel 12, the conductivity of the conductive structure CS-B can be further increased, thereby improving the driving electrical property of the micro led display panel 12.
Fig. 8 is a schematic top view of a micro led display panel according to a sixth embodiment of the invention. Fig. 9 is a schematic cross-sectional view of the micro light emitting diode display panel of fig. 8. FIG. 9 corresponds to section line C-C 'and section line D-D' of FIG. 8. Referring to fig. 8 and 9, the difference between the micro led display panel 13 of the present embodiment and the micro led display panel 12 of fig. 7 is: the conductive structures are arranged differently. In the embodiment, the metal conductive pattern MCP-C of the conductive structure CS-C and the second pad BP 2-a' belong to different film layers.
Specifically, the metal conductive pattern MCP-C of the conductive structure CS-C and the second signal line SL2 may selectively belong to the same film layer. That is, the metal conductive pattern MCP-C may be disposed on the interlayer insulating layer 120A and electrically connected to the transparent conductive pattern TCP-C through the contact holes 115t of the interlayer insulating layer 120A and the insulating layer 110E. Accordingly, the design flexibility and the process margin of the conductive structure CS-C can be increased. On the other hand, since the metal conductive patterns MCP-C and the corresponding second pads BP2-a 'are structurally separated from each other, the plurality of second pads BP 2-a' are electrically connected to the corresponding transparent conductive patterns TCP-C through the plurality of contact windows 110t of the insulating layer 110E, respectively.
Fig. 10 is a schematic top view of a micro led display panel according to a seventh embodiment of the invention. Referring to fig. 10, the difference between the micro led display panel 14 of the present embodiment and the micro led display panel 12 of fig. 7 is: the micro light emitting diode display panel has different compositions. In the present embodiment, the micro led display panel 14 may not have the second signal line SL2 shown in fig. 7 and the third signal line SL3 shown in fig. 3. In other words, the driving circuit layer of the micro led display panel 14 of the present embodiment is a passive matrix. For example, since the micro led display panel 14 of the present embodiment does not have the transistor devices (e.g., the transistor device Td and the transistor device Ts) as shown in fig. 3, the first pad BP 1-a' may be a portion of the first signal line SL 1. That is, the pixel circuit PC shown in fig. 3 is not disposed between the first pad BP 1-a' and the corresponding first signal line SL 1.
In summary, in the micro led display panel according to an embodiment of the invention, the conductive structure electrically connected to the second pads is composed of a plurality of transparent conductive patterns and metal conductive patterns alternately arranged. Since the transparent conductive patterns are structurally separated from each other, the overall transmittance of the micro light emitting diode display panel can be increased. On the other hand, the metal conductive patterns are used for electrically bridging the transparent conductive patterns, so that the conductivity of the conductive structure can be increased, and the driving electrical property of the micro light-emitting diode display panel is further improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A micro light emitting diode display panel, comprising:
a substrate;
a plurality of first signal lines disposed on the substrate;
a plurality of transparent conductive patterns separated from each other and distributed on the substrate;
a plurality of metal conductive patterns alternately arranged on the substrate with the plurality of transparent conductive patterns, wherein the plurality of metal conductive patterns are electrically connected among the plurality of transparent conductive patterns;
a plurality of first pads electrically connected to the plurality of first signal lines, respectively;
a plurality of second pads electrically connected to the plurality of transparent conductive patterns, each of the second pads being electrically connected to or integrated with one of the plurality of metal conductive patterns; and
and the micro light-emitting diode components are respectively electrically connected with one of the first connecting pads and one of the second connecting pads.
2. The micro light-emitting diode display panel of claim 1, wherein the micro light-emitting diode elements are respectively disposed between the transparent conductive patterns and do not overlap the transparent conductive patterns.
3. The micro light-emitting diode display panel of claim 1, further comprising:
the insulating layer is arranged between the transparent conductive patterns and the metal conductive patterns, and is provided with a plurality of openings, the openings are positioned between the transparent conductive patterns, and the metal conductive patterns are respectively positioned in the openings of the insulating layer.
4. The micro led display panel according to claim 1, wherein the metal conductive patterns, the first pads and the second pads belong to a same film layer.
5. The micro led display panel of claim 1, wherein at least one of the micro led assemblies overlaps one of the transparent conductive patterns.
6. The micro light-emitting diode display panel of claim 5, wherein the number of the micro light-emitting diode assemblies overlapped with one of the transparent conductive patterns is more than three, and the light-emitting colors of the micro light-emitting diode assemblies are different.
7. The micro light-emitting diode display panel according to claim 5 or 6, wherein two adjacent transparent conductive patterns are connected to each other via one of the metal conductive patterns, and any one of the second pads overlaps one of the transparent conductive patterns, the second pads being integrated with the metal conductive patterns.
8. The micro light-emitting diode display panel of claim 1, wherein the plurality of transparent conductive patterns are located between the plurality of metal conductive patterns and the substrate.
9. The micro light-emitting diode display panel of claim 1, further comprising:
a plurality of transistor elements electrically connected to the plurality of micro light emitting diode elements and the plurality of first signal lines; and
and a plurality of second signal lines electrically connected to the plurality of transistor elements and electrically independent from the plurality of first signal lines, wherein the plurality of metal conductive patterns and the plurality of second signal lines belong to the same film layer.
10. The micro light-emitting diode display panel of claim 9, wherein the second signal lines do not overlap the transparent conductive patterns.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062992168P | 2020-03-20 | 2020-03-20 | |
| US62/992,168 | 2020-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111915998A CN111915998A (en) | 2020-11-10 |
| CN111915998B true CN111915998B (en) | 2022-05-31 |
Family
ID=73279550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010839783.8A Active CN111915998B (en) | 2020-03-20 | 2020-08-19 | Micro light-emitting diode display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111915998B (en) |
| TW (1) | TWI739552B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1892385A (en) * | 2005-06-27 | 2007-01-10 | Lg.菲利浦Lcd株式会社 | Liquid crystal display and fabricating method thereof |
| CN102087450A (en) * | 2009-12-07 | 2011-06-08 | 乐金显示有限公司 | Method of fabricating liquid crystal display device |
| CN103413810A (en) * | 2013-05-20 | 2013-11-27 | 友达光电股份有限公司 | Pixel structure, display panel and manufacturing method of pixel structure |
| CN109244101A (en) * | 2017-07-10 | 2019-01-18 | 英属开曼群岛商錼创科技股份有限公司 | Display panel |
| CN109671732A (en) * | 2017-10-13 | 2019-04-23 | 英属开曼群岛商錼创科技股份有限公司 | Display device |
| WO2019139241A1 (en) * | 2018-01-15 | 2019-07-18 | 주식회사 엘지화학 | Transparent light emitting device display |
| CN110323212A (en) * | 2018-03-29 | 2019-10-11 | 群创光电股份有限公司 | Electronic device |
| CN110707119A (en) * | 2019-06-21 | 2020-01-17 | 錼创显示科技股份有限公司 | Semiconductor material substrate, micro light-emitting diode panel and manufacturing method thereof |
| CN110870065A (en) * | 2017-11-27 | 2020-03-06 | 首尔伟傲世有限公司 | LED unit for display and display apparatus having the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7336336B2 (en) * | 2003-10-14 | 2008-02-26 | Lg. Philips Co. Ltd. | Thin film transistor array substrate, method of fabricating the same, liquid crystal display panel having the same and fabricating method thereof |
| US7592627B2 (en) * | 2006-01-30 | 2009-09-22 | Wintek Corporation | Pixel structure of thin film transistor liquid crystal display |
| CN101320771A (en) * | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业（上海）有限公司 | Semiconductor luminous element |
| KR101002663B1 (en) * | 2008-12-11 | 2010-12-21 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
| KR101097454B1 (en) * | 2009-02-16 | 2011-12-23 | 네오뷰코오롱 주식회사 | Pixel circuit for organic light emitting diode(oled) panel, display device having the same, and method of driving oled panel using the same |
| US9461209B2 (en) * | 2013-11-27 | 2016-10-04 | Epistar Corporation | Semiconductor light-emitting device |
| US9577171B2 (en) * | 2014-06-03 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| TWI568036B (en) * | 2015-11-23 | 2017-01-21 | 財團法人工業技術研究院 | Illumination device |
| CN105470274B (en) * | 2015-11-23 | 2018-09-04 | 厦门天马微电子有限公司 | A kind of display panel, display panel manufacturing method and display device |
| US10615311B2 (en) * | 2016-04-22 | 2020-04-07 | Lg Innotek Co., Ltd. | Light emitting device and display comprising same |
| KR20180079037A (en) * | 2016-12-30 | 2018-07-10 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device and Method for manufacturing the Same |
| CN106876406B (en) * | 2016-12-30 | 2023-08-08 | 上海君万微电子科技有限公司 | LED full-color display device structure based on III-V nitride semiconductor and preparation method thereof |
| CN109671821B (en) * | 2017-10-13 | 2022-01-25 | 英属开曼群岛商錼创科技股份有限公司 | Micro light-emitting element and display device |
| TWI671571B (en) * | 2018-03-27 | 2019-09-11 | 同泰電子科技股份有限公司 | Package structure for backlight module |
| CN110491896B (en) * | 2019-08-16 | 2022-01-04 | 錼创显示科技股份有限公司 | Micro light emitting device display device and method of manufacturing the same |
| CN110660813A (en) * | 2019-08-21 | 2020-01-07 | 福建华佳彩有限公司 | OLED panel and manufacturing method thereof |
| CN110767642B (en) * | 2019-12-25 | 2020-09-01 | 佛山市国星半导体技术有限公司 | Array integrated micro LED chip and manufacturing method thereof |
-
2020
- 2020-08-19 CN CN202010839783.8A patent/CN111915998B/en active Active
- 2020-08-19 TW TW109128163A patent/TWI739552B/en active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1892385A (en) * | 2005-06-27 | 2007-01-10 | Lg.菲利浦Lcd株式会社 | Liquid crystal display and fabricating method thereof |
| CN102087450A (en) * | 2009-12-07 | 2011-06-08 | 乐金显示有限公司 | Method of fabricating liquid crystal display device |
| CN103413810A (en) * | 2013-05-20 | 2013-11-27 | 友达光电股份有限公司 | Pixel structure, display panel and manufacturing method of pixel structure |
| CN109244101A (en) * | 2017-07-10 | 2019-01-18 | 英属开曼群岛商錼创科技股份有限公司 | Display panel |
| CN109671732A (en) * | 2017-10-13 | 2019-04-23 | 英属开曼群岛商錼创科技股份有限公司 | Display device |
| CN110870065A (en) * | 2017-11-27 | 2020-03-06 | 首尔伟傲世有限公司 | LED unit for display and display apparatus having the same |
| WO2019139241A1 (en) * | 2018-01-15 | 2019-07-18 | 주식회사 엘지화학 | Transparent light emitting device display |
| CN110323212A (en) * | 2018-03-29 | 2019-10-11 | 群创光电股份有限公司 | Electronic device |
| CN110707119A (en) * | 2019-06-21 | 2020-01-17 | 錼创显示科技股份有限公司 | Semiconductor material substrate, micro light-emitting diode panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202137173A (en) | 2021-10-01 |
| CN111915998A (en) | 2020-11-10 |
| TWI739552B (en) | 2021-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6456903B2 (en) | Organic light emitting display | |
| KR102652572B1 (en) | Flexible electroluminesence display | |
| KR102107384B1 (en) | Display device including process key | |
| US7990050B2 (en) | Organic light emitting display having auxiliary electrode | |
| KR102050434B1 (en) | Flexible organic electroluminescent device and method for fabricating the same | |
| JP2023156286A (en) | display device | |
| JP2019046175A (en) | Display device | |
| US6541910B2 (en) | Organic el display | |
| KR20100034436A (en) | Organic electro-luminescent device and the method for fabricating thereof | |
| KR20210083805A (en) | Transparent display device | |
| KR20050067680A (en) | Dual panel type organic electroluminescent device and method for fabricating the same | |
| JP2018098188A (en) | Light emitting display device and method of manufacturing the same | |
| CN114613811A (en) | Electroluminescent display device | |
| CN111915998B (en) | Micro light-emitting diode display panel | |
| KR20070055931A (en) | Light emitting diodes and method for preparing the same | |
| US20220208883A1 (en) | Display device | |
| US11450796B2 (en) | Micro light emitting diode display panel | |
| JP7326470B2 (en) | Display device | |
| KR20160032405A (en) | Organic light emitting display device and method for manufacturing the same | |
| WO2020230497A1 (en) | Display device | |
| KR102640017B1 (en) | Narrow bezel electroluminesence display | |
| CN110010638B (en) | Display substrate, preparation method thereof and display device | |
| KR20220096492A (en) | Display device | |
| KR20220012680A (en) | Transparent display device | |
| JP7301119B2 (en) | transparent display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |