CN110491896B - Micro light emitting device display device and method of manufacturing the same - Google Patents
Micro light emitting device display device and method of manufacturing the same Download PDFInfo
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- CN110491896B CN110491896B CN201910757392.9A CN201910757392A CN110491896B CN 110491896 B CN110491896 B CN 110491896B CN 201910757392 A CN201910757392 A CN 201910757392A CN 110491896 B CN110491896 B CN 110491896B
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention provides a micro light-emitting element display device and a manufacturing method thereof. The epitaxial structures are distributed on the circuit substrate. The bonding pads are arranged between the epitaxial structures and the circuit substrate. The epitaxial structures are electrically connected to the circuit substrate through the bonding pads respectively. The plurality of light-shielding patterns and the plurality of connecting pads are alternately arranged on the circuit substrate, and each light-shielding pattern is connected between two adjacent connecting pads and is suitable for blocking light with the wavelength of 150 nm-400 nm from penetrating.
Description
Technical Field
The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a micro light emitting device display device and a method for manufacturing the same.
Background
In recent years, in the case that the manufacturing cost of an Organic light-emitting diode (OLED) Display panel is high and the service life thereof cannot compete with that of a current mainstream Display, a Micro LED Display (Micro LED Display) has attracted the investment of each technology industry. In addition to the advantages of low power consumption and long material life, the micro led display device has excellent optical performance, such as high color saturation, fast response speed and high contrast.
At present, in the manufacturing process of the micro light emitting device display apparatus, a mass transfer (mass transfer) technique plays a very important role, which transfers the micro light emitting devices, which are previously fabricated and stored on a temporary substrate, to a circuit substrate of an application terminal (for example, a display apparatus) through a transfer head (transfer head). However, the transfer accuracy of the current mass transfer technology has a problem of yield in the production of Ultra High resolution (UHD) display devices. Even if the epitaxial structure is directly formed on the circuit substrate of the display device without using the bulk transfer technique, the formed micro light-emitting device still has a problem of light-emitting efficiency. Therefore, it is an important issue for related manufacturers to improve the production yield of the micro-light emitting device display device while considering the display performance (such as light emitting efficiency and ultra-high resolution).
Disclosure of Invention
The invention provides a micro light-emitting element display device with better display quality.
The invention provides a manufacturing method of a micro light-emitting element display device, which has high production yield.
The invention relates to a micro light-emitting element display device, which comprises a circuit substrate, a plurality of epitaxial structures, a plurality of connecting pads and a plurality of shading patterns. The epitaxial structures are distributed on the circuit substrate. The bonding pads are arranged between the epitaxial structures and the circuit substrate. The epitaxial structures are electrically connected to the circuit substrate through the bonding pads respectively. The plurality of light-shielding patterns and the plurality of connecting pads are alternately arranged on the circuit substrate, and each light-shielding pattern is connected between two adjacent connecting pads and can block light with the wavelength of 150 nm-400 nm from penetrating.
In an embodiment of the invention, the circuit substrate of the above-mentioned micro light emitting device display apparatus has a surface, the first surface of each of the pads has a first height from the surface of the circuit substrate, and the second surface of each of the light shielding patterns has a second height from the surface of the circuit substrate, and the second height is smaller than or equal to the first height.
In an embodiment of the invention, each of the pads of the above-mentioned micro light emitting device display apparatus includes a first sub-pad and a second sub-pad, the first sub-pad is connected to one of the epitaxial structures, and the second sub-pad is connected between the first sub-pad and the circuit substrate. The first sub-pad has a first length in a direction, the second sub-pad has a second length in the direction, and the first length is equal to or less than the second length.
In an embodiment of the invention, the young's modulus of the light shielding pattern of the above-mentioned micro light-emitting device display apparatus is between 2.9GPa and 3.6 GPa.
In an embodiment of the invention, the light-shielding patterns of the micro light-emitting device display apparatus are connected to each other and surround the pads.
In an embodiment of the invention, the light-shielding patterns of the above-mentioned micro light-emitting device display device do not overlap with the pads
In an embodiment of the invention, the above-mentioned micro light emitting device display apparatus further includes a planarization layer and a store guide layer. The flat layer is arranged among the epitaxial structures. The flat layer covers the peripheral surface of each epitaxial structure. The conductive layer covers the epitaxial structures and the flat layer and is electrically connected with the epitaxial structures.
In an embodiment of the invention, the above-mentioned micro light emitting device display apparatus further includes a reflective layer disposed between the plurality of epitaxial structures. The reflective layer covers the peripheral surface of each epitaxial structure.
In an embodiment of the invention, the epitaxial structure of the micro light emitting device display apparatus includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer is electrically connected with the corresponding connecting pad. The light emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the luminous layer. The reflective layer covers the periphery of the first type semiconductor layer, the periphery of the light emitting layer and at least part of the periphery of the second type semiconductor layer.
In an embodiment of the invention, the reflective layer of the above-mentioned micro light-emitting device display apparatus has a first thickness in a normal direction of the circuit substrate, the light-emitting layer and the first type semiconductor layer have a second thickness in the normal direction of the circuit substrate, and the first thickness is greater than the second thickness.
In an embodiment of the invention, the above-mentioned micro light emitting device display apparatus further includes a light absorbing layer disposed between the plurality of epitaxial structures. The reflective layer is positioned between the plurality of light-shielding patterns and the light-absorbing layer.
In an embodiment of the invention, each of the epitaxial structures of the micro light emitting device display apparatus has a first surface and a second surface opposite to each other and a peripheral surface connecting the first surface and the second surface. The peripheral surface includes a first portion and a second portion. The first portion is connected with the second portion and has a turning point, and the width of the epitaxial structure gradually increases from the first surface to the turning point and gradually decreases from the turning point to the second surface.
The manufacturing method of the micro light-emitting element display device comprises the steps of forming an epitaxial layer on an epitaxial substrate, forming a plurality of first sub-bonding pads separated from each other on the epitaxial layer, forming a plurality of second sub-bonding pads separated from each other on a circuit substrate, bonding the epitaxial substrate on the circuit substrate, electrically bonding the first sub-bonding pads and the second sub-bonding pads to form a plurality of bonding pads electrically connecting the epitaxial layer and the circuit substrate, forming a plurality of shading patterns between the epitaxial substrate and the circuit substrate, removing the epitaxial substrate and removing part of the epitaxial layer after the circuit substrate is bonded on the epitaxial substrate, and forming a plurality of epitaxial structures. The plurality of light-shielding patterns and the plurality of second sub-pads are alternately arranged on the circuit substrate and can block light with the wavelength of 150 nm-400 nm from penetrating. The epitaxial structures correspond to the pads respectively and are electrically connected with the circuit substrate through the pads respectively.
In an embodiment of the invention, the method for manufacturing the micro light emitting device display apparatus further includes forming a plurality of light shielding patterns on the epitaxial layer before bonding the epitaxial substrate on the circuit substrate.
In an embodiment of the invention, the method of manufacturing a micro light emitting device display apparatus further includes forming a plurality of light shielding patterns on the circuit substrate before bonding the epitaxial substrate on the circuit substrate.
In an embodiment of the invention, each of the first sub-pads of the method for manufacturing a micro light emitting device display apparatus has a first length in a direction, each of the second sub-pads has a second length in the direction, and the first length is equal to or less than the second length.
In an embodiment of the invention, the light-shielding patterns of the method for manufacturing a micro light-emitting device display device do not overlap with the pads.
In an embodiment of the invention, the method for manufacturing a micro light emitting device display apparatus further includes performing a thinning process on the epitaxial substrate. The step of removing the epitaxial substrate includes performing a laser lift-off process.
In an embodiment of the invention, the method for manufacturing a micro light emitting device display device further includes forming a reflective layer between the plurality of epitaxial structures to cover a peripheral surface of each of the epitaxial structures.
In an embodiment of the invention, the method for manufacturing a micro light emitting device display device further includes forming a light absorbing layer between the plurality of epitaxial structures. The reflective layer is positioned between the plurality of light-shielding patterns and the light-absorbing layer.
In an embodiment of the invention, each of the epitaxial structures of the method for manufacturing a micro light emitting device display device has a first surface and a second surface opposite to each other and a peripheral surface connecting the first surface and the second surface. The peripheral surface includes a first portion and a second portion. The first portion is connected with the second portion and has a turning point, and the width of the epitaxial structure gradually increases from the first surface to the turning point and gradually decreases from the turning point to the second surface.
In view of the above, in the micro light emitting device display apparatus and the method for manufacturing the same according to the embodiment of the invention, the circuit substrate can be prevented from being damaged in the process of removing the epitaxial substrate by the arrangement of the plurality of light shielding patterns. In addition, when the micro light-emitting device display device is enabled, the light-shielding patterns can also block light beams emitted from the epitaxial structure from entering the circuit substrate, which is helpful for improving the operation stability (operational stability) and reliability (reliability) of the driving circuit in long-time operation. On the other hand, after the epitaxial layer is bonded to the circuit substrate, a part of the epitaxial layer is removed and a plurality of epitaxial structures are formed, so that the manufacturing of the micro light-emitting element display device with better display quality can be realized, and the light-emitting efficiency of the formed epitaxial structures is also better.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A to fig. 1H are schematic cross-sectional views illustrating a manufacturing process of a micro light emitting device display apparatus according to a first embodiment of the present invention;
FIG. 2 is a schematic top view of the pads and the light shielding patterns of FIG. 1H;
FIG. 3 is a schematic cross-sectional view of a micro light-emitting device display device according to a second embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a micro light-emitting device display device according to a third embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a micro-light emitting device display apparatus according to a fourth embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fifth embodiment of the present invention.
Description of the reference numerals
1. 2, 3, 4, 5: micro light emitting device display device
50: circuit substrate
50 s: surface of
60: epitaxial substrate
110: epitaxial layer
110 s: contact surface
110P, 110 PA: epitaxial structure
110 Ps: peripheral surface
110Ps 1: the first part
110Ps 2: the second part
110s 1: first surface
110s 2: second surface
111: first type semiconductor layer
112: luminescent layer
113: second type semiconductor layer
115: insulating layer
120. 120A: connecting pad
120s, 130 s: surface of
121. 121A: first sub-pad
122: second sub-pad
122 s: connecting surface
122 g: voids
130. 130A: shading pattern
140: insulating layer
150: conductive pattern
160: planarization layer
161: reflective layer
162: light absorbing layer
CE: conductive layer
H1: first height
H2, H2A: second height
LB: laser
L1, L2: length of
S: distance between each other
TP: turning point
t1, t 2: thickness of
W: width of bottom
X, Y: direction of rotation
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A to fig. 1H are schematic cross-sectional views illustrating a manufacturing process of a micro light emitting device display apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic top view of the pads and the light shielding patterns of fig. 1H. First, referring to fig. 1H, the micro light emitting device display apparatus 1 includes a circuit substrate 50, a plurality of epitaxial structures 110P, and a plurality of pads 120. The epitaxial structures 110P are disposed on the circuit substrate 50 in a dispersed manner, and the pads 120 are disposed between the epitaxial structures 110P and the circuit substrate 50. The epitaxial structures 110P are electrically connected to the circuit substrate 50 through the pads 120, respectively. In the present embodiment, the circuit substrate 50 is, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal On Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate or other substrates with operating circuits.
Further, the micro light emitting device display apparatus 1 further includes a plurality of light shielding patterns 130. The light-shielding patterns 130 and the plurality of pads 120 are alternately arranged on the circuit substrate 50, and each light-shielding pattern 130 is connected between two adjacent pads 120. In the embodiment, the light shielding patterns 130 are connected to each other and surround the pads 120 (as shown in fig. 2), but the invention is not limited thereto. In other embodiments, the plurality of light shielding patterns 130 may be spaced apart from each other. In the embodiment, each of the pads 120 protrudes from the circuit substrate 50 by a first height H1, and each of the light shielding patterns 130 protrudes from the circuit substrate 50 by a second height H2, and the first height H1 may be substantially equal to the second height H2. That is, the surface 120s of each pad 120 connected to the epitaxial structure 110P may substantially align with the surface 130s of the light shielding pattern 130. The light blocking pattern 130 may block light of a wavelength band of 150nm to 400nm from passing, that is, light of a wavelength band of 150nm to 400nm may be mostly absorbed or reflected by the light blocking pattern 130 without being transmitted therethrough. In the present embodiment, the light-shielding pattern 130 can block the laser light with a wavelength of 248nm from penetrating. Preferably, the Young's modulus of the light-shielding pattern 130 is between 2.9GPa and 3.6 GPa. The material of the light-shielding pattern 130 of the present embodiment is an organic material, such as photoresist, benzocyclobutene (BCB), Polyimide (PI), organic glue, and the like.
On the other hand, the micro light emitting device display apparatus 1 may further optionally include an insulating layer 140 and a plurality of conductive patterns 150. The conductive patterns 150 are respectively disposed in an overlapping manner on the epitaxial structures 110P and between the pads 120 and the circuit substrate 50. The pads 120 are electrically connected to the circuit substrate 50 through the conductive patterns 150. However, the invention is not limited thereto, and according to other embodiments, the pads 120 may be directly electrically connected to the circuit substrate 50. Further, the micro light emitting device display apparatus 1 further includes a planarization layer 160 and a conductive layer CE. The planarization layer 160 is disposed between the plurality of epitaxial structures 110P. The epitaxial structures 110P each have a peripheral surface 110Ps facing another epitaxial structure 110P, and the planarization layer 160 covers the peripheral surface 110Ps of each epitaxial structure 110P. In the present embodiment, the material of the insulating layer 140 and the planarization layer 160 includes an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stacked layer of at least two of the above materials), an organic material, or other suitable materials, or a combination thereof.
As mentioned above, the conductive layer CE covers the plurality of epitaxial structures 110P and the planarization layer 160 and is electrically connected to the plurality of epitaxial structures 110P. In other words, in the embodiment, the conductive layer CE may be a common electrode (common electrode), but the invention is not limited thereto. In other embodiments, the conductive layer may also be a plurality of conductive traces separated from each other, and each conductive trace is electrically connected to a portion of the epitaxial structure 110P. Particularly, the conductive layer CE and the pad 120 of the present embodiment are respectively located at two opposite sides of the epitaxial structure 110P. That is, in the present embodiment, the micro light emitting device formed by the partial conductive layer CE, the pad 120 and the epitaxial structure 110P is, for example, a vertical type light emitting diode (led) device.
For example, when the micro light emitting device display apparatus 1 is enabled, the pad 120 may have a high level, and the conductive layer CE may have a Ground level (Ground) or a low level. The current generated by the level difference between the pad 120 and the conductive layer CE enables the corresponding epitaxial structure 110P and emits a (visible) light beam. More specifically, the micro light emitting device display apparatus 1 can be controlled by the active device of the circuit substrate 50, so that the plurality of pads 120 have different high levels, respectively, and the epitaxial structures 110P emit light beams with different intensities due to different driving currents. The distribution of the light beams with different light intensities in the space can form an image picture to be seen by human eyes.
It should be noted that when the micro light emitting device display apparatus 1 is enabled, the light shielding pattern 130 is disposed to block the light beam from the epitaxial structure 110P from being irradiated onto the circuit substrate 50, and cause degradation of active devices (e.g., thin film transistors) on the circuit substrate 50. In other words, the light-shielding pattern 130 is provided to help improve the operational stability of the driving circuit and the reliability under long-term operation (long-life operation). The following will exemplarily describe a manufacturing flow of the micro light-emitting element display device 1 shown in fig. 1H.
Referring to fig. 1A, an epitaxial layer 110 is first formed on an epitaxial substrate 60. For example, the epitaxial layer 110 includes a second-type semiconductor layer 113, a light-emitting layer 112 and a first-type semiconductor layer 111 sequentially stacked on the epitaxial substrate 60. In the embodiment, the first-type semiconductor layer 111 is, for example, a P-type semiconductor, the second-type semiconductor layer 113 is, for example, an N-type semiconductor, and the light emitting layer 112 may be, but not limited to, a Multiple Quantum Well (MWQ) layer. Next, a plurality of first sub-pads 121 separated from each other are formed on the epitaxial layer 110, as shown in fig. 1B. The first sub-pad 121 is made of a conductive material, such as gold or gold-tin alloy.
Referring to fig. 1C, after forming a plurality of first sub-pads 121, a plurality of light-shielding patterns 130 are formed on the epitaxial layer 110, wherein the light-shielding patterns 130 and the plurality of first sub-pads 121 are alternately arranged on the epitaxial layer 110, but the invention is not limited thereto. In the present embodiment, the light-shielding patterns 130 do not overlap the first sub-pads 121 in a direction perpendicular to the epitaxial substrate 60. More specifically, the plurality of light-shielding patterns 130 are cut to align the plurality of first sub-pads 121, but the invention is not limited thereto. In other embodiments, the adjacent light shielding patterns and the first sub-pads 121 may be spaced apart from each other.
Next, the epitaxial substrate 60 is bonded to the wiring substrate 50, as shown in fig. 1D. For example, before the epitaxial substrate 60 is bonded on the circuit substrate 50, a plurality of second sub-pads 122 may be formed on the circuit substrate 50, and the second sub-pads 122 correspond to the plurality of first sub-pads 121 on the epitaxial layer 110, but the invention is not limited thereto. Specifically, in some embodiments, the light-shielding patterns 130 may be pre-disposed between the second sub-pads 122 before the epitaxial substrate 60 is bonded to the circuit substrate 50. That is, the plurality of light-shielding patterns 130 and the plurality of second sub-pads 122 are alternately arranged on the circuit substrate 50. In the embodiment, the circuit substrate 50 may further include an insulating layer 140 and a conductive pattern 150, wherein the conductive pattern 150 is disposed between the second sub-pad 122 and the circuit substrate 50, and the second sub-pad 122 penetrates through the insulating layer 140 and is electrically connected to the conductive pattern 150, but the invention is not limited thereto.
In this step, each light-shielding pattern 130 on the epitaxial layer 110 may extend into the gap 122g between two corresponding second sub-pads 122 on the circuit substrate 50 to connect the insulating layer 140 on the circuit substrate 50, but the invention is not limited thereto. According to other embodiments, each of the light shielding patterns 130 may also be directly connected to the circuit substrate 50. Particularly, after the epitaxial substrate 60 is bonded to the circuit substrate 50, the first sub-pads 121 are respectively connected to the second sub-pads 122 to form the pads 120. However, the invention is not limited thereto, and according to other embodiments, the plurality of pads 120 may be formed on the epitaxial substrate 60 or the circuit substrate 50 in advance before the epitaxial substrate 60 is bonded on the circuit substrate 50.
Referring to fig. 1E and fig. 1F, after the epitaxial layer 110 is bonded to the circuit substrate 50, the epitaxial substrate 60 is removed. For example, the method of removing the epitaxial substrate 60 includes performing a Laser Lift-Off (LLO) process. Specifically, the contact surface 110s between the epitaxial layer 110 and the epitaxial substrate 60 may be irradiated with the laser LB from the side of the epitaxial substrate 60 away from the epitaxial layer 110 to separate the second type semiconductor layer 113 and the epitaxial substrate 60. However, the invention is not limited thereto, and the epitaxial substrate 60 may be removed by a polishing process according to other embodiments. On the other hand, in order to reduce the power of the laser LB for energy saving, the epitaxial substrate 60 may be thinned before the laser lift-off process is performed, so as to reduce the optical energy loss of the laser LB through the epitaxial substrate 60. It should be noted that, in the process of irradiating the epitaxial layer 110 with the laser LB, the light-shielding pattern 130 can effectively absorb the laser LB, so as to prevent the circuit substrate 50 from being damaged by the irradiation with the laser LB, which is beneficial to improving the overall production yield.
After removing the epitaxial substrate 60, a portion of the epitaxial layer 110 is removed to form a plurality of epitaxial structures 110P (i.e., the epitaxial layer 110 is patterned), as shown in fig. 1G. Specifically, the epitaxial structures 110P correspond to the pads 120, and are electrically connected to the circuit substrate 50 through the pads 120, respectively. It should be noted that, after the epitaxial layer 110 is bonded to the circuit substrate 50, a portion of the epitaxial layer 110 is removed and a plurality of epitaxial structures 110P are formed, so that a super High resolution (UHD) micro light emitting device display device can be manufactured, and the light emitting efficiency of the formed epitaxial structures 110P is also better.
Next, a planarization layer 160 is formed between the epitaxial structures 110P, and the planarization layer 160 covers a portion of the surface 120s of the pad 120, the light-shielding pattern 130, and at least a portion of the peripheral surface 110Ps of the epitaxial structure 110P, as shown in fig. 1H. After the formation of the planarization layer 160, a conductive layer CE is formed on the planarization layer 160. The conductive layer CE is connected to the planarization layer 160 and extends to cover the plurality of epitaxial structures 110P to electrically connect the plurality of epitaxial structures 110P. In this way, the micro light-emitting device display apparatus 1 of the present embodiment is completed.
As shown in fig. 1H, the micro light emitting device display apparatus 1 includes a circuit substrate 50, a plurality of epitaxial structures 110P, a plurality of pads 120, and a plurality of light shielding patterns 130. The epitaxial structures 110P are disposed on the circuit substrate 50 in a dispersed manner. The pads 120 are disposed between the epitaxial structures 110P and the circuit substrate 50. The epitaxial structures 110P are electrically connected to the circuit substrate 50 through the pads 120, respectively. The light-shielding patterns 130 and the pads 120 are alternately arranged on the circuit substrate 50, and each light-shielding pattern 130 may be connected between two adjacent pads 120.
In the present embodiment, the material of the pad 120 is generally a metal material for the sake of conductivity. However, the invention is not limited thereto, and according to other embodiments, the pads 120 may also be made of other conductive materials, such as: an alloy, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or other suitable material, or a stacked layer of a metal material and other conductive materials. On the other hand, the conductive layer CE is, for example, a light transmissive electrode, and the material of the light transmissive electrode includes metal oxides, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxide, or a stack of at least two of the foregoing. That is, the micro light emitting device display apparatus 1 of the present embodiment is a top emission (top emission) type display apparatus.
The present disclosure will be described in detail below with reference to other embodiments, wherein like components are denoted by like reference numerals, and descriptions of the same technical content are omitted, and reference is made to the foregoing embodiments for omitting details.
Fig. 3 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a second embodiment of the present invention. Referring to fig. 3, the main differences between the micro light-emitting device display apparatus 2 of the present embodiment and the micro light-emitting device display apparatus 1 of fig. 1H are: the configuration of the connecting pad is different. In the embodiment, the first sub-pad 121A and the second sub-pad 122 of the pad 120A respectively have a first length L1 and a second length L2 in the direction X, and the first length L1 is smaller than the second length L2. In detail, after the second sub-pads 122 are formed, a plurality of light-shielding patterns 130 may be further formed between the second sub-pads 122, and each light-shielding pattern 130 protrudes from two adjacent second sub-pads 122 in a direction away from the circuit substrate 50.
In the embodiment, the first length L1 of the first sub-pad 121A is smaller than the second length L2 of the second sub-pad 122, so that the process margin (e.g., the tolerance of alignment accuracy) when the epitaxial substrate 60 and the circuit substrate 50 (as shown in fig. 1D) are bonded can be increased. Further, another difference between the micro light emitting device display apparatus 2 of the present embodiment and the micro light emitting device display apparatus 1 of fig. 1H is that: the light-shielding pattern 130A is formed on the circuit substrate 50 before the epitaxial substrate 60 is bonded to the circuit substrate 50 (as shown in fig. 1D).
In the embodiment, the first height H1 between the surface 120s of the pad 120 and the circuit substrate 50 may be greater than the second height H2A between the surface 130s of the light shielding pattern 130A and the circuit substrate 50, and the surface 130s of the light shielding pattern 130A may substantially align with the connection surfaces 122s of the first sub-pad 121 and the second sub-pad 122, but the invention is not limited thereto. Accordingly, the process margin (e.g., the tolerance of the alignment accuracy) when the epitaxial substrate 60 is bonded to the circuit substrate 50 (as shown in fig. 1D) can be increased.
Fig. 4 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a third embodiment of the present invention. Referring to fig. 4, the difference between the micro light-emitting device display apparatus 3 of the present embodiment and the micro light-emitting device display apparatus 1 of fig. 1H is: the plurality of epitaxial structures 110P have different pitches. In the present embodiment, the epitaxial structures 110P have a bottom width W in the direction X, and a space S is formed between any two adjacent epitaxial structures 110P in the direction X, and the bottom width W is greater than the space S. That is, the micro light-emitting device display apparatus 3 of the present embodiment is a display apparatus with ultra-high resolution, and can be produced by the manufacturing flow shown in fig. 1A to 1H.
Fig. 5 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fourth embodiment of the present invention. Referring to fig. 5, the difference between the micro light-emitting device display apparatus 4 of the present embodiment and the micro light-emitting device display apparatus 3 of fig. 4 is: the two adjacent epitaxial structures 110P have different components. In the present embodiment, a reflective layer 161 and a light absorbing layer 162 stacked on the reflective layer 161 may be further formed between the epitaxial structures 110P of the micro light emitting device display apparatus 4. The reflective layer 161 covers at least a portion of the peripheral surface 110Ps of the epitaxial structure 110P. More specifically, the reflective layer 161 covers the first-type semiconductor layer 111, the light emitting layer 112, and at least a portion of the second-type semiconductor layer 113.
From another perspective, in the normal direction of the circuit substrate 50, the reflective layer 161 has a first thickness t1, the first type semiconductor layer 111 and the light emitting layer 112 have a second thickness t2, and the first thickness t1 is greater than the second thickness t2 and smaller than the height of the epitaxial structure 110P. Accordingly, light beams emitted from the light emitting layer 112 can be prevented from being emitted from the peripheral surface 110Ps of the epitaxial structure 110P, which is helpful for improving light extraction efficiency (light extraction efficiency) of the epitaxial structure 110P.
In this embodiment, the material of the reflective layer 161 may be a metal or a metal compound material with a reflectivity greater than 90%, such as aluminum, silver, or a bragg mirror, but not limited thereto. It should be understood that, since the reflective layer 161 of the present embodiment may be formed of a metal material, in order to avoid electrical short between the epitaxial structures 110P, the micro light emitting device display apparatus 4 may further include an insulating layer 115 disposed between the epitaxial structures 110P and the reflective layer 161, wherein the conductive layer CE penetrates the insulating layer 115 and is electrically connected to the second type semiconductor layer 113. On the other hand, the absorption layer 162 disposed above the reflection layer 161 can reduce the generation of light mixing between two light beams emitted from two adjacent epitaxial structures 110P. In other words, the image clarity of the micro light-emitting device display apparatus 4 can be improved.
Fig. 6 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fifth embodiment of the present invention. Referring to fig. 6, the difference between the micro light-emitting device display apparatus 5 of the present embodiment and the micro light-emitting device display apparatus 1 of fig. 1H is: the epitaxial structure has a different configuration. In the embodiment, the epitaxial structure 110PA has a first surface 110s1 and a second surface 110s2 opposite to each other, and the peripheral surface 110Ps is connected between the first surface 110s1 and the second surface 110s 2. The peripheral surface 110Ps includes a first portion 110Ps1 and a second portion 110Ps2, the first portion 110Ps1 connecting the second portion 110Ps2 and having an inflection point TP. It should be noted that the width of the epitaxial structure 110PA gradually increases from the first surface 110s1 to the turning point TP, and gradually decreases from the turning point TP to the second surface 110s 2. That is, the projection of the epitaxial structure 110PA on the XY plane in the present embodiment may have a diamond-like outer contour. Accordingly, the risk of film rupture or wire breakage of the conductive layer CE formed on the epitaxial structure 110PA and the planarization layer 160 in the post-process can be reduced.
In summary, in the micro light emitting device display apparatus and the method of manufacturing the same according to the embodiment of the invention, the circuit substrate can be prevented from being damaged in the process of removing the epitaxial substrate by the arrangement of the plurality of light shielding patterns. In addition, when the micro light-emitting device display device is enabled, the light-shielding patterns can also block light beams emitted from the epitaxial structure from entering the circuit substrate, which is helpful for improving the operation stability (operational stability) and reliability (reliability) of the driving circuit in long-time operation. On the other hand, after the epitaxial layer is bonded to the circuit substrate, a part of the epitaxial layer is removed and a plurality of epitaxial structures are formed, so that the manufacturing of the micro light-emitting element display device with better display quality can be realized, and the light-emitting efficiency of the formed epitaxial structures is also better.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (20)
1. A micro light-emitting element display device comprising:
a circuit substrate;
a plurality of epitaxial structures, which are distributed on the circuit substrate;
a plurality of pads disposed between the plurality of epitaxial structures and the circuit substrate, the plurality of pads having surfaces contacting the plurality of epitaxial structures, wherein the plurality of epitaxial structures are electrically connected to the circuit substrate through the plurality of pads, respectively; and
a plurality of light-shielding patterns alternately arranged with the plurality of pads on the circuit substrate, wherein each light-shielding pattern is connected between two adjacent pads and is suitable for blocking light with a wavelength of 150 nm-400 nm from penetrating through;
a planarization layer disposed between the epitaxial structures and covering the peripheral surface of each of the epitaxial structures and a portion of the surface of the pads; and
and the conducting layer covers the epitaxial structures and the flat layer and is electrically connected with the epitaxial structures.
2. The micro light emitting device display apparatus according to claim 1, wherein the circuit substrate has a surface, a first surface of each of the pads has a first height from the surface of the circuit substrate, a second surface of each of the light shielding patterns has a second height from the surface of the circuit substrate, and the second height is equal to or less than the first height.
3. The device of claim 1, wherein each of the pads comprises a first sub-pad connected to one of the epitaxial structures and a second sub-pad connected between the first sub-pad and the circuit substrate, wherein the first sub-pad has a first length in an arrangement direction of the pads, the second sub-pad has a second length in the arrangement direction, and the first length is equal to or less than the second length.
4. The micro light-emitting element display device according to claim 1, wherein the young's modulus of the light-shielding pattern is from 2.9GPa to 3.6 GPa.
5. The micro light emitting device display apparatus of claim 1, wherein the plurality of light blocking patterns are connected to each other and surround the plurality of pads.
6. The device as claimed in claim 1, wherein the light-shielding patterns do not overlap the pads.
7. The micro light-emitting element display device according to claim 1, further comprising:
and the reflecting layer is arranged among the epitaxial structures and covers the peripheral surface of each epitaxial structure.
8. The micro light-emitting element display device according to claim 7, wherein each of the epitaxial structures comprises:
the first type semiconductor layer is electrically connected to the corresponding connecting pad;
a light emitting layer disposed on the first type semiconductor layer; and
and the second type semiconductor layer is arranged on the luminous layer, wherein the reflecting layer covers the periphery of the first type semiconductor layer, the periphery of the luminous layer and at least part of the periphery of the second type semiconductor layer.
9. The micro light-emitting element display device according to claim 8, wherein the reflective layer has a first thickness in a normal direction of the wiring substrate, the light-emitting layer and the first-type semiconductor layer have a second thickness in the normal direction of the wiring substrate, and the first thickness is larger than the second thickness.
10. The micro light-emitting element display device according to claim 7, further comprising:
and a light absorption layer disposed between the plurality of epitaxial structures, wherein the reflection layer is located between the plurality of light shielding patterns and the light absorption layer.
11. The micro light-emitting device display apparatus according to claim 1, wherein each of the epitaxial structures has a first surface and a second surface opposite to each other and a peripheral surface connecting the first surface and the second surface, the peripheral surface includes a first portion and a second portion, the first portion is connected to the second portion and has a turning point, and a width of the epitaxial structure gradually increases from the first surface toward the turning point and gradually decreases from the turning point toward the second surface.
12. A method for manufacturing a micro light emitting device display device includes:
forming an epitaxial layer on an epitaxial substrate, and forming a plurality of first sub-pads separated from each other on the epitaxial layer;
forming a plurality of second sub-pads separated from each other on the circuit substrate;
bonding the epitaxial substrate on the circuit substrate;
electrically bonding the first sub-pads and the second sub-pads to form pads electrically connecting the epitaxial layer and the circuit substrate;
forming a plurality of light-shielding patterns between the epitaxial substrate and the circuit substrate, wherein the plurality of light-shielding patterns and the plurality of second sub-pads are alternately arranged on the circuit substrate and can block light with a wavelength of 150 nm-400 nm from penetrating through;
removing the epitaxial substrate after the circuit substrate is bonded on the epitaxial substrate; and
and removing part of the epitaxial layer to form a plurality of epitaxial structures, wherein the plurality of epitaxial structures respectively correspond to the plurality of bonding pads and are electrically connected with the circuit substrate through the plurality of bonding pads.
13. The method for manufacturing a micro light-emitting element display device according to claim 12, further comprising:
forming the plurality of light shielding patterns on the epitaxial layer before bonding the epitaxial substrate on the circuit substrate.
14. The method for manufacturing a micro light-emitting element display device according to claim 12, further comprising:
forming the plurality of light blocking patterns on the circuit substrate before bonding the epitaxial substrate on the circuit substrate.
15. The method of claim 12, wherein each of the first sub-pads has a first length in a direction, each of the second sub-pads has a second length in the direction, and the first length is equal to or less than the second length.
16. The method as claimed in claim 12, wherein the light-shielding patterns do not overlap the pads.
17. The method for manufacturing a micro light-emitting element display device according to claim 12, further comprising:
performing a thinning process on the epitaxial substrate, wherein the step of removing the epitaxial substrate includes performing a laser lift-off process.
18. The method for manufacturing a micro light-emitting element display device according to claim 12, further comprising:
forming a reflective layer between the plurality of epitaxial structures, wherein the reflective layer covers the peripheral surface of each of the epitaxial structures.
19. The method for manufacturing a micro light-emitting element display device according to claim 18, further comprising:
forming a light absorbing layer between the plurality of epitaxial structures, wherein the reflective layer is located between the plurality of light blocking patterns and the light absorbing layer.
20. The method as claimed in claim 12, wherein each of the epitaxial structures has a first surface and a second surface opposite to each other and a peripheral surface connecting the first surface and the second surface, the peripheral surface includes a first portion and a second portion, the first portion is connected to the second portion and has a turning point, and a width of the epitaxial structure gradually increases from the first surface to the turning point and gradually decreases from the turning point to the second surface.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11387387B2 (en) | 2017-10-13 | 2022-07-12 | PlayNitride Display Co., Ltd. | Micro light emitting device display apparatus |
| TWI729766B (en) * | 2019-12-19 | 2021-06-01 | 錼創顯示科技股份有限公司 | Display apparatus |
| CN111063270B (en) * | 2019-12-30 | 2022-06-21 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| CN111430523B (en) * | 2020-02-24 | 2021-06-01 | 錼创显示科技股份有限公司 | Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device |
| US11450796B2 (en) | 2020-03-20 | 2022-09-20 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel |
| CN111915998B (en) * | 2020-03-20 | 2022-05-31 | 錼创显示科技股份有限公司 | Micro light-emitting diode display panel |
| CN112599510B (en) * | 2020-08-24 | 2022-11-08 | 錼创显示科技股份有限公司 | Miniature LED display matrix module |
| TWI783602B (en) * | 2021-06-29 | 2022-11-11 | 錼創顯示科技股份有限公司 | Micro light emitting diode panel and method of fabricating the same |
| TWI781743B (en) * | 2021-08-27 | 2022-10-21 | 友達光電股份有限公司 | Display device and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205790048U (en) * | 2016-06-13 | 2016-12-07 | 南昌凯迅光电有限公司 | A kind of sidewall roughening high brightness LED |
| CN107437551A (en) * | 2016-05-25 | 2017-12-05 | 群创光电股份有限公司 | Display device and method for manufacturing the same |
| CN108666337A (en) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led and display panel |
| CN109671732A (en) * | 2017-10-13 | 2019-04-23 | 英属开曼群岛商錼创科技股份有限公司 | Display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
| WO2018091459A1 (en) * | 2016-11-15 | 2018-05-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
-
2019
- 2019-08-16 CN CN201910757392.9A patent/CN110491896B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437551A (en) * | 2016-05-25 | 2017-12-05 | 群创光电股份有限公司 | Display device and method for manufacturing the same |
| CN205790048U (en) * | 2016-06-13 | 2016-12-07 | 南昌凯迅光电有限公司 | A kind of sidewall roughening high brightness LED |
| CN108666337A (en) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led and display panel |
| CN109671732A (en) * | 2017-10-13 | 2019-04-23 | 英属开曼群岛商錼创科技股份有限公司 | Display device |
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