CN111912379A - Method for inspecting processing quality of processed surface of wafer and cutting quality of cutting surface - Google Patents
Method for inspecting processing quality of processed surface of wafer and cutting quality of cutting surface Download PDFInfo
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- CN111912379A CN111912379A CN202010723133.7A CN202010723133A CN111912379A CN 111912379 A CN111912379 A CN 111912379A CN 202010723133 A CN202010723133 A CN 202010723133A CN 111912379 A CN111912379 A CN 111912379A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000012545 processing Methods 0.000 title claims abstract description 41
- 238000012876 topography Methods 0.000 claims abstract description 39
- 235000012431 wafers Nutrition 0.000 claims description 96
- 238000005498 polishing Methods 0.000 claims description 16
- 238000007689 inspection Methods 0.000 claims description 10
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- 238000005259 measurement Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/32—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring the deformation in a solid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
Abstract
The application provides a method for inspecting the processing quality of a processed surface of a wafer and the cutting quality of a cutting surface of the wafer, and relates to the technical field of semiconductors. The method for inspecting the processing quality of the processed surface of the wafer comprises the steps of acquiring a warping degree, a curvature degree and a middle surface topography of the surface of the processed surface of the wafer to be detected; respectively comparing the acquired warping degree, warping degree and middle surface topography with a warping degree reference value, a warping degree reference value and a standard middle surface topography; and judging the processing quality of the processed surface of the wafer according to the comparison result. The method for inspecting the processing quality of the processed surface of the wafer can represent the convex-concave degree of the surface of the whole processed surface of the wafer, and accurately inspect the processing quality of the processed surface of the wafer.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a method for inspecting the processing quality of a processed surface of a wafer and the cutting quality of a cutting surface of the wafer.
Background
At present, the main mode of silicon wafer cutting processing is multi-line cutting. The basic principle of multi-line cutting is that a steel wire moving at a high speed drives cutting edge materials attached to the steel wire to rub a silicon rod, so that hard and brittle materials such as the silicon rod and the like are simultaneously cut into thousands of thin slices at one time.
In the prior art, the inspection method for the cutting quality of the surface of the cutting piece after wafer linear cutting comprises the following steps: and performing few-slice irregular spot measurement, simply evaluating the cutting quality according to the warping degree and the bending degree obtained by the spot measurement, and providing reference for subsequent processing according to an evaluation result.
The existing linear cutting blade sampling method only samples a small amount of samples, has few detection parameters, cannot comprehensively feed back the cutting quality of the cutting blade, cannot feed back problem points on the existing linear cutting production line in time, and is easy to generate defective products.
Disclosure of Invention
An object of the embodiment of the present application is to provide a method for inspecting quality of linear cutting, which can solve the problem of inaccurate quality inspection of the existing linear cutting blade, and reduce the defective rate on the linear cutting production line.
In a first aspect, an embodiment of the present application provides a method for inspecting processing quality of a processed surface of a wafer, including:
acquiring warping degree, curvature and a middle surface topography of the surface of the processed surface of the wafer to be detected;
respectively comparing the acquired warping degree, warping degree and middle surface topography with a warping degree reference value, a warping degree reference value and a standard middle surface topography;
and judging the processing quality of the processed surface of the wafer according to the comparison result.
In one embodiment, the method for drawing the middle profile map comprises the following steps:
selecting a reference plane;
calculating the distance between a series of points on the surface of the processed surface of the wafer to be detected and the reference plane, and marking the distances as the height values of all the points;
drawing contour lines to obtain the middle surface topography.
In one embodiment, the reference plane is a reference plane for values of the warp and bow.
In one embodiment, the processed surface of the wafer is a cutting surface of the wafer after the crystal bar is subjected to multi-line cutting.
In one embodiment, the cut surface meets the criteria for processing quality as:
the difference range of the warping degree of the cutting surface and the warping degree reference value is 0-50;
the range of the curvature of the cutting surface relative to a curvature reference value is-8- + 8;
the numerical range of the contour lines in the midplane topography [0,50 ].
In one embodiment, the processed surface of the wafer is a ground surface or a polished surface.
In one embodiment, the grinding surface or polishing surface meets the criteria for processing quality as follows:
the difference between the warping degree of the grinding surface or the polishing surface and the warping degree reference value is 0-10;
the curvature of the grinding surface or the polishing surface is in a range of-5 to 0 relative to a reference value of the curvature;
the numerical range of the contour lines in the midplane topography [0,30 ].
In one embodiment, the processed surface of the wafer is the surface of an epitaxial wafer.
In a second aspect, a method for inspecting the cutting quality of a cut surface of a wafer is provided, which includes:
after multi-wire cutting of the crystal bar is completed, extracting a preset number of wafers along the extending direction of the axis of the crystal bar at preset intervals;
the cut surfaces of the wafer are inspected according to the inspection method described in the first aspect.
In a further embodiment, the cut quality inspection method further comprises:
and distributing a preset processing process according to the middle surface topography of the wafer cutting surface.
According to the technical scheme, the method has the following beneficial effects:
1. the convex-concave degree of the surface of the whole processed surface of the wafer can be represented, and the processing quality of the processed surface of the wafer can be accurately detected.
2. The occurrence of the abnormal condition of the machined surface can be fed back in time, the improvement and the remediation can be carried out in time, and the generation of defective products is reduced.
3. Can be used as the direction basis of subsequent processing, improve and converge the quality of finished wafers, and improve the yield of good products.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a flowchart illustrating a method for inspecting the processing quality of a processed surface of a wafer according to an embodiment of the present disclosure;
fig. 2 is a mid-plane topography of a wafer cut surface at selected locations according to an embodiment of the present application.
Icon: 100-ingot; 200-middle profile.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
According to one aspect of the application, a method for checking the processing quality of a processed surface of a wafer is provided. FIG. 1 is a flow chart showing a method for inspecting the processing quality of a processed surface of a wafer. Referring to fig. 1, the method for checking the processing quality of the processed surface of the wafer comprises the following steps:
s101: and acquiring the warpage, the curvature and the middle surface topography of the surface of the processed surface of the wafer to be detected.
The warpage is used to describe the degree of curvature of the processed surface of the wafer in space, and is defined numerically as the distance between two points at which the warpage plane is farthest away in the height direction.
Wafer bow is used to assess the degree of dishing or dishing of a wafer and is used to represent the vertical distance between the highest and lowest points of the wafer surface.
In the embodiment of the application, the method for drawing the middle profile map comprises the following steps:
selecting a reference plane;
calculating the distance between a series of points on the surface of the processed surface of the wafer to be detected and the reference plane, and marking the distances as the height value of each point;
drawing contour lines to obtain a middle surface topography.
In an alternative embodiment, the reference plane is a warp and bow reference plane. The warping degree, the bending degree and the middle surface topography adopt the same value reference surface, so that the reference coordinate systems of the numerical values are consistent, and the data calculation amount is reduced.
The middle surface topography can represent the fluctuation state of the whole surface of the wafer surface.
In this step, the warp, bow and middle profile of the surface of the processed surface of the wafer can be obtained by an optical surface measuring instrument of FRT (Fries Research & Technology GmbH) or by a flatness measuring instrument GSS of gmy, inc.
The selection and the measurement method of the measuring instrument are not particularly limited, and all the measuring instrument and the measuring method which can obtain the warping degree and the bending degree and can draw the middle surface topography map according to the drawing method of the middle surface topography map fall into the protection scope of the application.
In the present application, the expression form of the middle profile topography includes, but is not limited to, a wave shape, a concentric circle, a saddle shape, a penetration shape (contour line is higher than standard contour line), and the like.
S102: and respectively comparing the acquired warping degree, bow and middle surface topography with a warping degree reference value, a bow reference value and a standard middle surface topography.
The warp degree reference value and the bending degree reference value can be set by setting numerical values. The warp reference value and the bow reference value may be set according to SEMI standard of the international association for semiconductor industry.
In the embodiment of the present application, the standard middle profile is drawn by using the same reference plane as the middle profile. The contour lines in the standard mid-plane topography are set according to SEMI standards.
In one possible implementation, the reference plane is one of the central cross sections of the wafer, i.e., the reference plane may traverse the wafer and be located at a position intermediate to the two cut surfaces of the wafer. It should be noted that, the selected position of the reference plane is not specifically limited in the present application, and may be located at a position between two cut surfaces of the wafer, or may be located outside the wafer. In the application, only one plane is required to be selected from the reference plane of the middle surface topography map and the reference plane of the standard middle surface topography map.
S103: and judging the processing quality of the processed surface of the wafer according to the comparison result.
In the embodiment of the application, the processing quality of the processed surface of the wafer needs to be calibrated by the warpage, the curvature and the middle surface topography. Namely, the processing quality of the processed surface of the wafer is judged to be in accordance with the processing requirement only when the difference value between the warping degree and the warping degree reference value is within the threshold range, and the difference value between the contour line of the middle surface topography map and the contour line of the standard middle surface topography map is within the threshold range.
In one embodiment, the processed surface of the wafer is a cutting surface of the wafer after the ingot is subjected to multi-line cutting.
When the processed surface of the wafer is the cut surface after cutting, the standard for judging that the cut surface meets the processing quality is as follows:
the difference range of the warping degree of the cutting surface and the warping degree reference value is 0-50;
the range of the curvature of the cutting surface relative to the reference value of the curvature is-8- + 8;
the numerical range of the contour lines in the medium profile [0,50 ].
If the three parameters of the cutting surface are all within the threshold range, the cutting quality of the cutting surface meets the cutting requirement, and if one parameter is not within the threshold range, the cutting quality of the cutting surface does not meet the cutting requirement, and the wafer to be detected is determined to be a defective product.
In another embodiment, the processed surface of the wafer is a ground surface after the wafer is ground or a polished surface after the wafer is polished.
The standard for judging whether the grinding surface or the polishing surface of the wafer meets the processing quality is as follows:
the difference between the warping degree of the grinding surface or the polishing surface and the warping degree reference value is 0-10;
the curvature of the grinding surface or the polishing surface is in a range of-5 to 0 relative to a reference value of the curvature;
the numerical range of the contour lines in the medium profile [0,30 ].
If the three parameters of the grinding surface or the polishing surface are all within the threshold range, the grinding or polishing of the grinding surface or the polishing surface is satisfactory, and if one parameter is not within the threshold range, the grinding or polishing of the grinding surface or the polishing surface is unsatisfactory, and the wafer to be detected is determined to be a defective product.
In yet another embodiment, the processed surface of the wafer is a surface of an epitaxial wafer.
The standard for judging whether the surface of the epitaxial wafer meets the processing quality is as follows:
the difference between the warping degree of the grinding surface or the polishing surface and the warping degree reference value is 0-10;
the curvature of the grinding surface or the polishing surface is in a range of-5 to 0 relative to a reference value of the curvature;
the numerical range of the contour lines in the mid-plane topography [0,40 ].
And if the three parameters of the surface of the epitaxial wafer are all within the threshold range, the quality of the surface of the epitaxial wafer meets the requirement, and if one parameter is not within the threshold range, the quality of the epitaxial wafer does not meet the requirement, and the epitaxial wafer to be detected is determined to be a defective product.
The conventional method for inspecting the processed surface of the wafer is generally to detect the warpage and bow of the processed surface of the wafer. The warp can only detect the distance between two points with the farthest distance in the height direction of the processed surface of the wafer, and the warp can only detect the vertical distance between the highest point and the lowest point of the surface of the wafer. In the inspection method, the middle surface topography is introduced, and the convex-concave degree of the surface of the processed surface of the whole wafer can be inspected through the middle surface topography, so that the processing quality of the processed surface of the wafer can be accurately inspected.
The method for inspecting the processing quality of the processed surface of the wafer is also applicable to the inspection of the processing quality of the surface of an object made of materials such as oxide, nitride, a III-V compound, a II-VI compound, a IV simple substance, a IV compound, a compound semiconductor and the like.
According to another aspect of the application, a method for inspecting the cutting quality of the cutting surface of the wafer is also provided. The method comprises the following steps:
and after the multi-wire cutting of the crystal bar is finished, extracting a preset number of wafers along the extending direction of the axis of the crystal bar at preset intervals. For each extracted wafer, the cut surface of the wafer is inspected according to the inspection method provided in the summary of the first aspect of the present application.
Referring to fig. 2, for the extraction of the wafer, the equal-interval division of the sections in the direction in which the axis of the ingot 100 extends may be adopted, and a wafer is extracted at the boundary of each section. Because the cutting line is in a gradually-worn state from the line inlet to the line outlet due to the influence of hardware of the multi-line cutting machine, the cutting surface of the wafer shows a rule that the jumping is large from the numerical value change to the approach stability according to the line inlet-line outlet sequence, and the concave-convex condition of the cutting surface of the wafer can be displayed through an intuitive graph by referring to a middle surface topography 200 shown below each junction. And the cutting quality of the wafer cutting surface can be judged by combining the warping degree and the bending degree of the wafer cutting surface.
The method for inspecting the cutting quality of the wafer cutting surface in the embodiment of the application can solve the problem that the existing quality inspection of the cut wafer is inaccurate, and can timely detect the wafer cutting surface at the preset position in the wafer, so that the abnormal condition of the cut surface can be fed back immediately, the improvement and the remedy are timely carried out, and the generation of defective products is reduced.
Further, the method for inspecting the cutting quality of the wafer cutting surface further comprises the following steps: and distributing the preset processing progress according to the middle surface topography of the wafer cutting surface.
Representations of the midplane topography in the embodiments of the present application include, but are not limited to, undulations, concentric circles, saddles, penetrations, and the like. If the middle profile is in a through shape, the subsequent processing process can be matched with a light-heavy pressure composite process. If the middle profile is wavy, the subsequent processing process can be matched with a light pressing process. If the middle profile is concentric or saddle-shaped, the subsequent processing can be matched with a heavy pressing process. When the middle profile map presents other shapes, the selection of corresponding manufacturing processes can be carried out according to the situation.
Therefore, the method for inspecting the cutting quality of the wafer cutting surface in the embodiment of the application can be used as a direction basis for subsequent processing, so that the quality of a finished wafer is improved and converged, and the yield of a good product is improved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method for inspecting the processing quality of a processed surface of a wafer is characterized by comprising the following steps:
acquiring warping degree, curvature and a middle surface topography of the surface of the processed surface of the wafer to be detected;
respectively comparing the acquired warping degree, warping degree and middle surface topography with a warping degree reference value, a warping degree reference value and a standard middle surface topography;
and judging the processing quality of the processed surface of the wafer according to the comparison result.
2. The method according to claim 1, wherein the method for drawing the middle profile map comprises the following steps:
selecting a reference plane;
calculating the distance between a series of points on the surface of the processed surface of the wafer to be detected and the reference plane, and marking the distances as the height values of all the points;
drawing contour lines to obtain the middle surface topography.
3. The method of claim 2, wherein the reference plane is a reference plane for values of the warp and bow.
4. The method as claimed in any one of claims 1 to 3, wherein the processed surface of the wafer is a cut surface of the wafer after the multi-line cutting of the ingot is completed.
5. The method according to claim 4, characterized in that the cut surface meets the criteria of processing quality:
the difference range of the warping degree of the cutting surface and the warping degree reference value is 0-50;
the range of the curvature of the cutting surface relative to a curvature reference value is-8- + 8;
the numerical range of the contour lines in the midplane topography [0,50 ].
6. The method according to any one of claims 1 to 3, wherein the processed surface of the wafer is a ground surface or a polished surface.
7. The method according to claim 6, wherein the grinding surface or the polishing surface meets the criteria of processing quality as follows:
the difference between the warping degree of the grinding surface or the polishing surface and the warping degree reference value is 0-10;
the curvature of the grinding surface or the polishing surface is in a range of-5 to 0 relative to a reference value of the curvature;
the numerical range of the contour lines in the midplane topography [0,30 ].
8. A method according to any one of claims 1 to 3, wherein the processed surface of the wafer is the surface of an epitaxial wafer.
9. A method for inspecting the cutting quality of a cut surface of a wafer, comprising:
after multi-wire cutting of the crystal bar is completed, extracting a preset number of wafers along the extending direction of the axis of the crystal bar at preset intervals;
inspecting the cut surface of the wafer according to the inspection method of any one of claims 1 to 8.
10. The cut quality inspection method of claim 9, further comprising:
and distributing a preset processing process according to the middle surface topography of the wafer cutting surface.
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Application publication date: 20201110 |