CN115547810A - Evaluation method for cutting ingot - Google Patents
Evaluation method for cutting ingot Download PDFInfo
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- CN115547810A CN115547810A CN202210379549.0A CN202210379549A CN115547810A CN 115547810 A CN115547810 A CN 115547810A CN 202210379549 A CN202210379549 A CN 202210379549A CN 115547810 A CN115547810 A CN 115547810A
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- ingot
- slicing
- cutting
- evaluation method
- slice
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention provides an evaluation method for cutting an ingot. The evaluation method includes the following steps. A plurality of sampling points are set on a test piece of the ingot. Next, a plurality of observation surfaces are set. Each observation surface is formed by at least two adjacent sampling points. Then, an average value of the measurement values of the sampling points included in each observation plane is calculated. And taking the observation surface corresponding to the minimum average value as the cutter-entering reference surface of the crystal ingot.
Description
Technical Field
The present invention relates to a semiconductor manufacturing process, and more particularly, to an evaluation method for slicing an ingot.
Background
In the semiconductor industry, a method of manufacturing wafers (wafers) includes forming an ingot (ingot) and then slicing the ingot to obtain wafers. The number of wafers can be directly determined in the process of cutting the ingot to form the wafers, and the number of the wafers produced in the back-end process of the semiconductor can be more directly influenced, so that the improvement of the cutting quality of the ingot can be accompanied by the increase of the economic effect of the semiconductor industry.
Disclosure of Invention
The invention aims at an evaluation method for cutting a crystal ingot, which can obtain a better cutter-entering reference surface so as to reduce the slicing and chipping rate.
According to an embodiment of the present invention, an evaluation method for cutting an ingot includes: setting a plurality of sampling points on a test piece; setting a plurality of observation surfaces, wherein each observation surface is formed by at least two adjacent sampling points; calculating a first average value of measurement values of sampling points included in each observation surface, wherein the measurement values of the sampling points are obtained by sampling by a measuring instrument; and taking the observation surface corresponding to the minimum first average value as a tool entrance reference surface.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, after taking an observation plane corresponding to the smallest of the first average values as a cutting reference plane, further comprising: setting a plurality of slicing paths by setting the rest sampling points which do not form the cutter entering reference surface in a mode of being parallel to the cutter entering reference surface; calculating a second average value of the measurement values of the sampling points included in each slice path; and determining a plurality of slice parameters corresponding to each slice path according to the second average value of each slice path.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, the step of determining the slicing parameters corresponding to each slicing path based on the second average value of each slicing path includes: obtaining a reference index corresponding to each slice path according to the second average value of each slice path; and obtaining slice parameters corresponding to each slice path based on the reference index of each slice path.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, the slicing parameters include a linear cutting speed, a trolley rocking angle, a trolley speed, and an ingot moving speed.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, the setting of the observation plane includes: the viewing surface is defined in an annular region located on the test strip, wherein the inner radius of the annular region is 60% of the radius of the test strip and the outer radius of the annular region is 99% of the radius of the test strip.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, the step of setting the observation plane includes: the viewing surface is defined in an annular region of the test strip, wherein the inner radius of the annular region is 75% of the radius of the test strip and the outer radius of the annular region is 85% of the radius of the test strip.
In the evaluation method for slicing an ingot according to an embodiment of the present invention, the step of setting the observation plane includes: the viewing surface is defined on the circumference of the test strip, wherein the circumference is spaced 80% of the radius of the test strip from the center point of the test strip.
In the evaluation method for slicing an ingot according to the embodiment of the present invention, the inspection piece is a slice of one of the leading and trailing ends of the ingot.
Based on the above, the invention can determine the cutter-entering reference surface of the crystal ingot according to the test piece of the crystal ingot, further reduce the slicing breakage rate and optimize the wafer geometry.
Drawings
Fig. 1 is an oblique view of an ingot slicing process according to an embodiment of the present invention;
fig. 2 is a flow chart of an evaluation method for slicing an ingot in accordance with an embodiment of the present invention;
FIG. 3 is a schematic view of a test strip according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of setting a view plane according to an embodiment of the invention;
FIG. 5 is a schematic view of an annular region in accordance with an embodiment of the present invention;
FIG. 6 is a schematic diagram of a slicing path in accordance with an embodiment of the present invention.
Description of the reference numerals
110: fixing device
120: ingot
130. 140: roller wheel
150: cutting line
300: test piece
310. 310-1 to 310-12: sampling point
410 to 440: observation surface
510: annular region
610 to 611: slicing path
C: center of circle
D: direction of knife insertion
d1: outer radius
d2: inner radius
S205 to S220: steps of evaluation method for cutting ingot
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is an oblique view of an ingot slicing process according to an embodiment of the present invention. Referring to fig. 1, in the present embodiment, a fixing device 110, rollers 130 and 140, and a cutting line 150 are used as a cutting tool, and an ingot 120 is cut by the cutting tool. Ingot 120 is, for example, a silicon carbide ingot, but not limited thereto. Here, the fixing device 110 serves to fix the crystal ingot 120. Cutting wire 150 includes a steel wire and abrasive particles (e.g., diamond particles) on the steel wire. A plurality of cutting segments are defined by winding cutting wires 150 around rollers 130 and 140, and ingot 120 is repeatedly cut by cutting wires 150 to cut ingot 120 into tens to hundreds of wafers. In this embodiment, but not limited to, boule 120 is cut using cutting line 150. In other embodiments, boule 120 may also be cut by a knife, laser, water knife, or other means.
Before cutting ingot 120, the X-ray rocking curve distribution on the inspection piece of ingot 120 may be obtained by using a measuring device, and analyzed and counted by using an electronic device, thereby adjusting relevant parameters during cutting. The quality of the sliced wafers of ingot 120, in addition to being related to the parameter design and equipment conditions at the time of slicing, is also related to the quality of ingot 120 itself. The knife-in position is particularly important during slicing. The following examples illustrate evaluation methods for cutting ingot 120.
Fig. 2 is a flowchart of an evaluation method for slicing an ingot in accordance with an embodiment of the present invention. In step S205, a plurality of sampling points are set on the inspection piece of the ingot 120. Here, the test piece is, for example, a slice of one of the head and tail ends of ingot 120, and the number of sampling points is preferably more than 48 points, and the sampling points are uniformly distributed.
For example, FIG. 3 is a schematic diagram of a test strip according to an embodiment of the invention. Referring to fig. 3, a plurality of sampling points 310 are disposed in a test strip 300. In fig. 3 there are shown 51 sampling points 310. The number of sampling points 310 is only for illustration and not limited thereto.
Next, in step S210, a plurality of observation surfaces are set. Here, each observation plane is formed by at least two adjacent sampling points, and the number of observation planes is set to be at least 4, however, it may be set to be more than 4 observation planes. FIG. 4 is a diagram illustrating setting of an observation plane according to an embodiment of the invention. Referring to fig. 4, the observation planes 410 to 440 are respectively formed by 3 adjacent sampling points. The observation plane 410 comprises sampling points 310-1 to 310-3, the observation plane 420 comprises sampling points 310-4 to 310-6, the observation plane 430 comprises sampling points 310-7 to 310-9, and the observation plane 440 comprises sampling points 310-10 to 310-12.
For example, the viewing surface may be set within an annular region of the test strip 300. That is, the observation surface is set with sampling points in the annular region. For example, FIG. 5 is a schematic view of an annular region according to an embodiment of the invention. The center C of the test strip 300 is used as the center of the annular region 510, the inner radius of the annular region 510 is d2, and the outer radius is d1. In the present embodiment, the inner radius d2 of the annular region 510 is set to 60% of the radius of the test strip 300, and the outer radius d1 is set to 99% of the radius of the test strip 300.
However, in other embodiments, the inner radius d2 of the annular region 510 is set to 75% of the radius of the test strip 300 and the outer radius d1 is set to 85% of the radius of the test strip 300.
In other embodiments, the observation surface may be set on the circumference of the test piece 300. The distance from the circumference to the center C of the test strip 300 is 80% of the radius of the test strip 300.
Then, in step S215, a first average of the measurement values of the sampling points 310 included in each of the observation planes (410 to 440) is calculated. Here, the measurement values at the sampling points are obtained by sampling with a measuring instrument. For example, the X-ray rocking curve is sampled at the sampling points 310 by the measuring instrument, and the Full width at half maximum (FWHM) of each sampling point 310, i.e., the measured value, is obtained. The measuring instrument 110 includes a diffractometer, such as an X-ray diffractometer (XRD) or an optical instrument, such as FRT or Tropel, for measuring the wafers respectively to obtain Full width at half maximum (FWHM) of different point locations in each wafer. The full width at half maximum may represent the quality of the crystal, and therefore, the full width at half maximum is measured here as a basis for judgment.
Referring to fig. 4, an average value of full widths at half maximum of sampling points 310-1 to 310-3 included in observation plane 410 (first average value a 1), an average value of full widths at half maximum of sampling points 310-4 to 310-6 included in observation plane 420 (first average value a 2), an average value of full widths at half maximum of sampling points 310-7 to 310-9 included in observation plane 430 (first average value a 3), and an average value of full widths at half maximum of sampling points 310-10 to 310-12 included in observation plane 440 (first average value a 4) are calculated.
Then, in step S220, the observation plane corresponding to the smallest first average value is used as the tool entrance reference plane. That is, the observation plane corresponding to the smallest of the first average values a1 to a4 is used as the tool entrance reference plane. Assuming a2< a1< a3< a4, the observation plane 420 is taken as the tool-entering reference plane.
After the knife-entering reference surface is obtained, the slicing parameters can be further adjusted. Here, a plurality of slicing paths are set so as to be parallel to the cutting reference surface for the remaining sampling points that do not constitute the cutting reference surface. Then, a second average value of the measurement values of the sampling points included in each of the slicing paths is calculated, and a plurality of slicing parameters corresponding to each of the slicing paths are determined based on the second average value of each of the slicing paths.
FIG. 6 is a schematic diagram of a slicing path in accordance with an embodiment of the present invention. Referring to fig. 6, the cutting direction D is determined according to the cutting reference plane (i.e., the observation plane 420), and the slicing paths 601 to 611 are set. The second average value of each slice path is calculated using the measurement values obtained by sampling the sampling points 310 by the measurement instrument. For example, an average (second average) of the full widths at half maximum of three sampling points included in the slice path 601 is calculated.
And obtaining the corresponding reference index according to the second average value table look-up. Thereafter, corresponding slice parameters are obtained based on the reference indices. For example, the index lookup table and the parameter comparison table may be established in the electronic device in advance. The index lookup table comprises a plurality of reference indexes, and each reference index has a corresponding numerical range. The parameter comparison table comprises a plurality of reference indexes and corresponding slice parameters. After the second average value of each slice path is obtained, the index lookup table is used for judging the range within which the second average value falls, and then the corresponding reference index is obtained. Then, corresponding slice parameters are obtained from the parameter comparison table according to the reference indexes. The slicing parameters include a cutting speed of the cutting wire 150, a rocking angle of the rollers 130, 140, a swinging speed of the rollers 130, 140, and a moving speed of the ingot 120 (i.e., a speed at which the fixture 110 to which the ingot 120 is fixed moves downward).
For example, in the case of the cutting tool shown in fig. 1, the ingot 120 is placed with the surface on which the observation surface 420 is located facing downward, and cutting is performed from the cutting direction D. The cutting paths 601 to 611 are assumed to have corresponding cutting parameters a601 to a611, respectively. Between the cutting from the edge of the ingot 120 to the cutting path 601, a preset cutting parameter is used to set the cutting tool. The cutting parameter a601 is adopted between the cutting path 601 and the cutting path 602, the cutting parameter a602 is adopted between the cutting path 602 and the cutting path 603, and so on, to correspondingly adjust the cutting parameter of the cutting tool.
In conclusion, the invention can determine the cutter-entering reference surface of the ingot according to the inspection sheet of the ingot, thereby reducing the slicing breakage rate and optimizing the wafer geometry. In addition, since the ingot itself may have different hardness at different positions, if the same ingot uses the same slicing parameters during the slicing process, the problems of wafer cracks, wafer fragments, etc. may be caused, resulting in a reduction in yield of the manufacturing process. Therefore, the above embodiment further provides a method for adjusting the cutting parameters, thereby increasing the yield of the manufacturing process. In addition, the above embodiments may also adjust the cutting parameters for different ingots.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. An evaluation method for slicing an ingot, comprising:
setting a plurality of sampling points on the test piece;
setting a plurality of observation surfaces, wherein each observation surface is formed by at least two adjacent sampling points;
calculating a first average value of the measurement values of the sampling points included in each observation surface, wherein the measurement values of the sampling points are obtained by sampling by a measuring instrument; and
and taking the observation surface corresponding to the minimum first average value as the cutter entering reference surface.
2. An evaluation method for slicing an ingot as set forth in claim 1, further comprising, after taking an observation plane corresponding to the smallest of the first average values as the cutting-in reference plane:
setting a plurality of slicing paths in a manner of being parallel to the tool entering reference surface for the rest of the sampling points which do not form the tool entering reference surface;
calculating a second average of the measurements of the sampling points comprised by each of the slice paths; and
and determining a plurality of slice parameters corresponding to each slice path according to the second average value of each slice path.
3. An evaluation method for cutting an ingot as set forth in claim 2 wherein the step of determining the slicing parameters corresponding to each of the slicing paths from the second average value of each of the slicing paths comprises:
obtaining a reference index corresponding to each of the slice paths according to the second average value of each of the slice paths; and
obtaining the slice parameters corresponding to each of the slice paths based on the reference indicator for each of the slice paths.
4. An evaluation method for cutting an ingot as set forth in claim 2 wherein the slicing parameters include a cutting speed of the cutting wire, a rocking angle of the roller, a rocking speed of the roller, and a moving speed of the ingot.
5. An evaluation method for slicing an ingot as set forth in claim 1 wherein the step of setting the observation plane comprises:
setting the observation surface in an annular region of the test piece, wherein the inner radius of the annular region is 60% of the radius of the test piece, and the outer radius of the annular region is 99% of the radius of the test piece.
6. An evaluation method for cutting an ingot as set forth in claim 1 wherein the step of setting the observation plane comprises:
setting the observation surface in an annular region of the test strip, wherein the inner radius of the annular region is 75% of the radius of the test strip, and the outer radius of the annular region is 85% of the radius of the test strip.
7. An evaluation method for slicing an ingot as set forth in claim 1 wherein the step of setting the observation plane comprises:
and setting the observation surface on the circumference of the test piece, wherein the distance from the circumference to the center point of the test piece is 80% of the radius of the test piece.
8. An evaluation method for slicing an ingot as set forth in claim 1 wherein the test piece is a slice of one of the leading and trailing ends of the ingot.
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| TW110124076 | 2021-06-30 | ||
| TW110124076A TWI804906B (en) | 2021-06-30 | 2021-06-30 | Evaluation method for cutting ingot |
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| JP2001050912A (en) * | 1999-08-11 | 2001-02-23 | Rigaku Corp | Support apparatus for single-crystal ingot and apparatus, and method for measurement of single-crystal ingot |
| KR102284879B1 (en) * | 2019-10-29 | 2021-07-30 | 에스케이씨 주식회사 | SiC WAFER, PREPARATION METHOD OF SiC WAFER |
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| TW202302306A (en) | 2023-01-16 |
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