CN111370346A - Wafer warping degree measuring device and method - Google Patents
Wafer warping degree measuring device and method Download PDFInfo
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- CN111370346A CN111370346A CN202010195557.0A CN202010195557A CN111370346A CN 111370346 A CN111370346 A CN 111370346A CN 202010195557 A CN202010195557 A CN 202010195557A CN 111370346 A CN111370346 A CN 111370346A
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The embodiment of the invention discloses a device and a method for measuring the warping degree of a wafer, wherein the device comprises: the supporting component is used for bearing the wafer; the three-dimensional scanning component is arranged at a certain distance from the supporting component and is used for scanning the surface appearance of the wafer; the moving component is connected with the three-dimensional scanning component and is used for controlling the three-dimensional scanning component to move so that the three-dimensional scanning component can complete scanning of the surface topography at different positions on the wafer; and the data processing module is used for receiving the scanning result of the three-dimensional scanning component and calculating the warping degree of the wafer according to the scanning result.
Description
Technical Field
The invention relates to the technical field of wafer detection, in particular to a device and a method for measuring the warping degree of a wafer.
Background
In semiconductor device fabrication, it is generally necessary to provide a wafer and form a patterned film structure on the wafer to prepare various circuit device structures. Commonly used wafers, such as silicon wafers, currently the mainstream silicon wafer diameter is 300 mm.
In the manufacturing process of the 3D NAND memory chip, tens of hundreds of film layers need to be stacked and deposited on the surface of the wafer, and when the number of the stacked film layers on the wafer reaches 128 layers, 196 layers or even more, the stress between the film layers is increasingly greater, and the warping (bow) degree of the wafer is increasingly obvious. The warpage of the wafer directly causes difficulty in subsequent processes and even failure to form effective functional structural units, so the warpage (bow value) of the wafer needs to be detected. However, conventional measurement methods and instruments are increasingly difficult to meet due to technical limitations.
Disclosure of Invention
Accordingly, embodiments of the present invention provide an apparatus and a method for measuring warpage of a wafer to solve at least one of the problems in the related art.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the embodiment of the invention provides a wafer warping degree measuring device, which comprises:
the supporting component is used for bearing the wafer;
the three-dimensional scanning component is arranged at a certain distance from the supporting component and is used for scanning the surface appearance of the wafer;
the moving component is connected with the three-dimensional scanning component and is used for controlling the three-dimensional scanning component to move so that the three-dimensional scanning component can complete scanning of the surface topography at different positions on the wafer;
and the data processing module is used for receiving the scanning result of the three-dimensional scanning component and calculating the warping degree of the wafer according to the scanning result.
In the above solution, the supporting component includes three or more supporting bodies, the supporting bodies are separately distributed at a circumferential position, and a distance from one end of each supporting body close to the center of the circle is smaller than the radius of the wafer.
In the above scheme, the moving component controls the three-dimensional scanning component to move along an annular track, a plane of the annular track is perpendicular to a plane where the supporting component is located, and a circle center of the annular track coincides with a center of the supporting component.
In the above scheme, the scanning precision of the three-dimensional scanning component is in the submicron level.
In the above scheme, the scanning result includes a first scanning result for the wafer upper surface topography and a second scanning result for the wafer lower surface topography.
In the foregoing solution, the data processing module is specifically configured to:
receiving the first scan result and the second scan result of the three-dimensional scanning component;
respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result;
and calculating the warping degree of the wafer according to the coordinate data.
In the above scheme, the method further comprises:
and the display module is used for receiving a first scanning result and a second scanning result of the three-dimensional scanning component and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result.
The embodiment of the invention also provides a wafer warpage measuring method, which comprises the following steps:
placing a wafer on a support member;
controlling the three-dimensional scanning component to move so that the three-dimensional scanning component finishes scanning the surface topography at different positions on the wafer to obtain a scanning result;
and calculating the warping degree of the wafer according to the scanning result.
In the above scheme, the support component includes more than three support bodies, the support bodies are separately distributed at a circumferential position, and a distance from one end of each support body close to the center of the circle is smaller than the radius of the wafer.
In the foregoing aspect, the controlling the movement of the three-dimensional scanning component includes:
and controlling the three-dimensional scanning component to move along an annular track, wherein the plane of the annular track is vertical to the plane of the supporting component, and the circle center of the annular track is superposed with the center of the supporting component.
In the above scheme, the scanning precision of the three-dimensional scanning component is in the submicron level.
In the above scheme, the scanning result includes a first scanning result for the wafer upper surface topography and a second scanning result for the wafer lower surface topography.
In the foregoing solution, calculating the warp of the wafer according to the scanning result specifically includes:
respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result;
and calculating the warping degree of the wafer according to the coordinate data.
In the above scheme, the method further comprises:
and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result.
The wafer warpage measuring device and method provided by the embodiment of the invention, wherein the device comprises: the supporting component is used for bearing the wafer; the three-dimensional scanning component is arranged at a certain distance from the supporting component and is used for scanning the surface appearance of the wafer; the moving component is connected with the three-dimensional scanning component and is used for controlling the three-dimensional scanning component to move so that the three-dimensional scanning component can complete scanning of the surface topography at different positions on the wafer; and the data processing module is used for receiving the scanning result of the three-dimensional scanning component and calculating the warping degree of the wafer according to the scanning result. Therefore, the surface appearance of the wafer is scanned by the three-dimensional scanning component, a three-dimensional model of the wafer can be obtained, and further the warping condition of the wafer at any position can be obtained, so that the monitoring of the processing technology and the adjustment of the technological parameters are facilitated; the problem that the warping degree of a wafer with large deformation cannot be effectively measured is solved; and the on-line measurement of the warping degree of the wafer is realized.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1a is a front view of a wafer warp measuring device according to an embodiment of the present invention;
fig. 1b is a side view of a wafer warp measuring apparatus according to an embodiment of the present invention;
fig. 1c is a top view of a wafer warp measuring device according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of a wafer warp measurement method according to an embodiment of the present invention;
fig. 3a to fig. 3c are schematic process diagrams of a wafer warpage measuring method according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. And the discussion of a second element, component, region, layer or section does not necessarily imply that a first element, component, region, layer or section is present in the invention.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
A method for measuring the warping degree of a wafer is to measure by utilizing the principle of white light interference, the method obtains an optical signal reflected by the surface of the wafer by emitting polarized light by a light source and irradiating the polarized light to the wafer, forms an interference signal between the light reflected by a reference plane and the light reflected by a standard surface, and then analyzes the surface appearance of the wafer by analyzing phase difference; and obtaining the shape information of the wafer through the height difference of the surface, and further calculating to obtain the warping degree of the wafer. Another method for measuring the warpage of the wafer is a method for obtaining an image definition value by using the focal length from a measuring lens to the surface of a silicon wafer, wherein the image obtained when the measuring lens is away from a standard wafer (or called an 'ideal wafer', which means a wafer without warpage in an ideal state, namely a wafer without deformation and completely horizontal) by a certain distance is clearest (the specific definition can be used as a threshold value to represent a numerical value), and the distance from the measuring lens to the ideal wafer at the moment is recorded; when the measured wafer deforms, the focal length changes, the definition of the image changes accordingly, the image is made to be clear again by moving the distance between the measuring lens and the measured wafer, the moving distance of the measuring lens is recorded, the operation is repeated, and the deformation degree of the measured wafer is obtained by recording the moving distance of a series of measuring lenses.
The measuring method is used for the conditions that the number of chip layers is small and the deformation of the wafer is small, but when the number of the chip layers is more and the deformation of the wafer is more and more large, the wafer cannot be well fixed due to overlarge warping degree, and therefore the measurement is more and more difficult.
Based on the limitations of the above technical solutions, embodiments of the present invention provide a wafer warpage measuring apparatus and a wafer warpage measuring method. Embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
First, please refer to fig. 1a to 1 c; fig. 1a is a front view of a wafer warpage measuring apparatus according to an embodiment of the present invention; fig. 1b is a side view of a wafer warp measuring apparatus according to an embodiment of the present invention; fig. 1c is a top view of a wafer warp measuring apparatus according to an embodiment of the present invention.
The wafer warpage measuring device provided by the embodiment of the invention comprises:
a support member 11 for carrying the wafer 80;
the three-dimensional scanning component 12 is arranged at a certain distance from the supporting component 11 and is used for scanning the surface topography of the wafer 80;
the moving part 13 is connected with the three-dimensional scanning part 12 and is used for controlling the three-dimensional scanning part 12 to move so that the three-dimensional scanning part 12 finishes scanning the surface topography at different positions on the wafer 80;
and a data processing module (not shown in the figure) for receiving the scanning result of the three-dimensional scanning component 12 and calculating the warp degree of the wafer 80 according to the scanning result.
As can be understood, the embodiment of the invention scans the surface topography of the wafer through the three-dimensional scanning component, so as to obtain a three-dimensional model of the wafer, and further obtain the warping condition of the wafer at any position; the on-line measurement of the warping degree of the wafer is realized, and the influence on the manufacturing process of the device is reduced.
Here, the wafer 80 is a substrate for manufacturing a semiconductor device, and may also be referred to as a base plate, a substrate, or the like. The wafer is made of silicon, germanium, GaAs, InP, GaN or the like. In one embodiment, the wafer is a silicon wafer.
The support member 11 may comprise more than three support bodies, and fig. 1c shows the case where the number of the support bodies is four.
In order to bear the wafer, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than the radius of the wafer. It should be understood that the distance from the other end of the supporting body far away from the circle center to the circle center is larger than the radius of the wafer.
The device may further comprise an upper cover 101 and a lower cover 102; the supporting member 11, the three-dimensional scanning unit 12, and the moving member 13 are located inside a cavity surrounded by the upper cover 101 and the lower cover 102. Each support body of the support member 11 may be fixedly installed inside the lower cover 102, for example, on an inner wall of the lower cover 102; in other embodiments, the support member 11 may further include a support ring, besides the support body, and the support bodies are connected by the support ring, and the support ring is fixedly installed inside the lower cover 102, for example, fixed on the inner wall of the lower cover 102.
In one embodiment, the supporting member has a region for contacting the wafer, and the distance between the outer edge of the region (i.e. the circumferential position of the wafer when the wafer is carried) and the inner wall of the cavity of the apparatus (specifically, for example, the inner wall of the lower cover) is greater than the width of the three-dimensional scanning member, so as to allow the three-dimensional scanning member to pass through the gap between the wafer and the inner wall of the lower cover, and move from the upper (or lower) surface of the wafer to the lower (or upper) surface of the wafer. In embodiments where the support member comprises more than three supports, the three-dimensional scanning component passes between two adjacent supports.
The three-dimensional scanning component 12 may specifically be a three-dimensional scanner (3D scanner). A three-dimensional scanner is a scientific instrument for detecting and analyzing the shape (geometric configuration) and appearance data of an object or environment in the real world; the collected data may be used to perform three-dimensional reconstruction calculations to create a digital model of the actual object in the virtual world. In this embodiment, the three-dimensional scanning component scans the surface topography of the wafer, which may specifically refer to obtaining distance data from the surface structure of the wafer to the three-dimensional scanning component; the three-dimensional scanning component can also be used for establishing a three-dimensional model after scanning the surface topography of the wafer, namely the scanning result can be the three-dimensional model of the surface topography of the wafer to be measured.
The scanning range of the three-dimensional scanning component is conical, for example, the topography information within a certain range of the surface of the wafer can be collected at one position, and the scanning range of the three-dimensional scanning component is limited. In order to achieve scanning at different positions on the whole surface of the wafer, in an embodiment, the three-dimensional scanning component is controlled to move along a symmetry axis of the supporting component (i.e. to move along a diameter direction of the wafer), and at the same time, the three-dimensional scanning component is controlled to swing left and right along a vertical direction of the diameter (i.e. the scanning visual angle of the three-dimensional scanning component swings left and right), so as to complete scanning at different positions on the whole surface of the wafer; in one embodiment, the three-dimensional scanning component can perform scanning at different positions on the entire surface of the wafer to be measured by controlling the three-dimensional scanning component to move along a symmetry axis of the support component and simultaneously controlling the wafer to rotate (i.e., changing the relative positions of the wafer and the three-dimensional scanning component). It will be appreciated that through multiple scans of the three-dimensional scanning component, a complete model of the wafer surface topography can be eventually assembled.
The moving part 13 may control the three-dimensional scanning part to move. The moving component may include two parts, namely a driving device and a mechanical arm, wherein the mechanical arm is connected to the three-dimensional scanning component (here, the mechanical arm may refer to a bending portion located on the three-dimensional scanning component 13 and connected to the three-dimensional scanning component 13 in fig. 1 a), and the driving device drives the mechanical arm to move so as to drive the three-dimensional scanning component to move.
In a particular embodiment, the device further comprises an endless track 14. The moving component controls the three-dimensional scanning component to move along the annular track, the plane of the annular track is perpendicular to the plane of the supporting component, and the circle center of the annular track is superposed with the center of the supporting component.
It will be appreciated that figure 1b, although showing the endless track 14 and the support member 11 at the same time, is offset in the actual position of the two in the apparatus. In an embodiment in which the support member comprises more than three supports, the endless track is located between two adjacent supports at the level of the wafer.
The moving component is used for controlling the three-dimensional scanning component to move, and comprises a first surface (such as an upper surface) used for controlling the visual angle of the three-dimensional scanning component to face the wafer, and a second surface (such as a lower surface) opposite to the first surface of the wafer, so that the three-dimensional scanning component finishes the topography scanning of the two opposite surfaces of the wafer. In this embodiment, the scanning results include a first scanning result for the topography of the upper surface of the wafer and a second scanning result for the topography of the lower surface of the wafer.
The data processing module calculates the warpage of the wafer according to the scanning result, for example, the warpage of the wafer is calculated according to a first scanning result for the upper surface topography of the wafer and/or a second scanning result for the lower surface topography of the wafer.
It should be understood that, in practical applications, the warp of the wafer is generally calculated according to the first scanning result; and when the deformation of the wafer back needs to be measured, calculating according to the second scanning result. Considering that a film layer is deposited on the upper surface of the wafer, so as to form an uneven micro-morphology, in the embodiment of the present application, the warpage of the wafer may be determined by a method of measuring a fitting curve of the upper surface after establishing a three-dimensional model, or the warpage of the wafer may be determined by using a second scanning result for the topography of the lower surface of the wafer (generally, the lower surface of the wafer is relatively flat).
The data processing module may be configured as a computing device including a processor. The computing device may be a workstation, server, desktop, laptop, mainframe, Pad, cluster, virtual appliance, or other computing device, which may support a processor. The processor performs a process of calculating warp of the wafer. When the warping degree of the wafer is calculated, the scanning result can be compared with a standard wafer model, and the warping degree of the scanned (namely, measured) wafer is calculated; the standard wafer refers to a wafer without warpage in an ideal state.
In a specific embodiment, the data processing module is configured to: receiving the first scan result and the second scan result of the three-dimensional scanning component; respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result; and calculating the warping degree of the wafer according to the coordinate data.
In some embodiments, the three-dimensional scanning component creates three-dimensional coordinate point cloud data of the surface of the measured wafer by scanning the surface topography of the wafer; carrying out denoising, repairing, optimizing, coordinate transformation data and other processing on the three-dimensional coordinate point cloud data to obtain complete point cloud data of the surface of the measured wafer; and establishing a three-dimensional model of the surface topography of the wafer to be measured according to the complete point cloud data. The three-dimensional coordinate point cloud data is processed to obtain complete point cloud data of the surface of the wafer to be detected, and the complete point cloud data can be executed by a post-data processing module of the three-dimensional scanning component or a data processing module except the three-dimensional scanning component; the three-dimensional model building may be performed by a three-dimensional model building module of the three-dimensional scanning component, or may be performed by a three-dimensional model building module other than the three-dimensional scanning component.
The data processing module obtains coordinate data of the positions of the upper surface and the lower surface of the wafer, and specifically, the coordinate data of the positions of the upper surface and the lower surface of the wafer can be measured according to the established three-dimensional model. Of course, the embodiment of the present application does not exclude the case of directly using the three-dimensional coordinate point cloud data on the surface of the wafer as the coordinate data of each position of the wafer, that is, the case of not processing the three-dimensional coordinate point cloud data. Further, the data processing module calculates the coordinate data to obtain the warping degree of the wafer. In addition, information such as defects on the surface of the wafer can be obtained through data processing.
The wafer warpage measuring device can also comprise a display module. The display module is used for receiving a first scanning result and a second scanning result of the three-dimensional scanning component and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result. Through the three-dimensional model of the wafer, an engineer can visually observe the three-dimensional structure of the wafer; and defect information of any position of the wafer can be obtained according to actual requirements.
The embodiment of the invention also provides a wafer warping degree measuring method. Fig. 2 is a schematic flow chart of a wafer warp measurement method according to an embodiment of the present invention.
As shown in fig. 2, the method includes:
step 201: placing a wafer on a support member;
step 202: controlling the three-dimensional scanning component to move so that the three-dimensional scanning component finishes scanning the surface topography at different positions on the wafer to obtain a scanning result;
step 203: and calculating the warping degree of the wafer according to the scanning result.
The method is further described in detail with reference to the process schematic diagrams of the wafer warp measurement method shown in fig. 3a to 3 c.
It should be understood that the wafer warp measuring method provided by the embodiment of the present invention may use the wafer warp measuring apparatus provided by the embodiment of the present invention to measure the wafer; the structures shown in fig. 3a to 3c may correspond to the corresponding structures in fig. 1a to 1 c.
First, please refer to fig. 3 a. The upper cover is opened and the wafer 90 to be tested is placed on the support member 31.
Here, the wafer 90 to be measured may be moved by a robot arm so that the wafer 90 to be measured is placed on the support member 31.
The support member 31 may include three or more support bodies, and fig. 3a and 3c show the case where the number of the support bodies is four.
Next, please refer to fig. 3 b. After the wafer 90 under test is placed stably, the upper cover 301 is closed.
The upper cover 301 and the lower cover 302 are covered, and a cavity is formed by the upper cover and the lower cover; the supporting member 31, the three-dimensional scanning member 32, and the moving member 33 are located inside the cavity surrounded by the upper cover 301 and the lower cover 302.
Next, please continue to refer to fig. 3 b. And controlling the three-dimensional scanning component 32 to move so that the three-dimensional scanning component 32 finishes scanning the surface topography at different positions on the wafer 90 to obtain scanning results.
The controlling of the movement of the three-dimensional scanning unit 32 may be specifically controlling the movement of the three-dimensional scanning unit 32 by a moving unit 33 connected to the three-dimensional scanning unit 32.
The controlling of the movement of the three-dimensional scan component 32 may include: and controlling the three-dimensional scanning component 32 to move along an annular track 34, wherein the plane of the annular track 34 is vertical to the plane of the supporting component 31, and the center of the annular track 34 is coincident with the center of the supporting component 31.
After the three-dimensional scanning component 32 finishes scanning the surface topography at different positions on the wafer, a scanning result is obtained; the obtaining of the scanning result may be specifically establishing a three-dimensional model. The three-dimensional model is a three-dimensional model of the surface topography of the wafer 90 being measured.
The scanning accuracy of the three-dimensional scanning component is, for example, submicron. In particular, it may be between 0.1 μm and 1 μm (i.e., 100nm and 1000 nm).
The scan results may include a first scan result for a topography of an upper surface of the wafer and a second scan result for a topography of a lower surface of the wafer. Specifically, the three-dimensional scanning component is controlled to move so that the visual angle of the three-dimensional scanning component can face the upper surface of the wafer, and can also move to the visual angle of the three-dimensional scanning component to face the lower surface of the wafer, so that the three-dimensional scanning component finishes the shape scanning of two opposite surfaces of the wafer.
And then, calculating the warping degree of the wafer according to the scanning result. The method obtains the three-dimensional model of the surface topography of the wafer to be measured, so that the warping condition of the wafer at any position can be obtained.
In an embodiment, calculating the warp of the wafer according to the scanning result includes: respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result; and calculating the warping degree of the wafer according to the coordinate data.
In some embodiments, the three-dimensional scanning component is controlled to move so that the three-dimensional scanning component can complete scanning of surface topography at different positions on the wafer; creating three-dimensional coordinate point cloud data of the surface of the measured wafer; carrying out denoising, repairing, optimizing, coordinate transformation data and other processing on the three-dimensional coordinate point cloud data to obtain complete point cloud data of the surface of the measured wafer; and establishing a three-dimensional model of the surface topography of the wafer to be measured according to the complete point cloud data.
And obtaining coordinate data of the positions of the upper surface of the wafer and the lower surface of the wafer, and specifically measuring the coordinate data of the positions of the upper surface of the wafer and the lower surface of the wafer according to the established three-dimensional model. Of course, the embodiment of the present application does not exclude the case of directly using the three-dimensional coordinate point cloud data on the surface of the wafer as the coordinate data of each position of the wafer, that is, the case of not processing the three-dimensional coordinate point cloud data. Further, the method comprises: and calculating the coordinate data to obtain the warping degree of the wafer. In addition, information such as defects on the surface of the wafer can be obtained through data processing.
The method may further comprise: and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result. Through the three-dimensional model of the wafer, an engineer can visually observe the three-dimensional structure of the wafer; and defect information of any position of the wafer can be obtained according to actual requirements.
Finally, please refer to fig. 3 c. The upper cover is opened and the wafer 90 is removed from the support member 31.
Here, the removal of the wafer can also be accomplished by a robotic movement.
After the wafer 90 is removed, the subsequent processes can be performed.
It should be noted that the embodiment of the wafer warpage measuring method provided by the invention and the embodiment of the wafer warpage measuring device belong to the same concept; the technical features of the technical means described in the embodiments may be arbitrarily combined without conflict.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (14)
1. A wafer warpage measuring device, characterized by, includes:
the supporting component is used for bearing the wafer;
the three-dimensional scanning component is arranged at a certain distance from the supporting component and is used for scanning the surface appearance of the wafer;
the moving component is connected with the three-dimensional scanning component and is used for controlling the three-dimensional scanning component to move so that the three-dimensional scanning component can complete scanning of the surface topography at different positions on the wafer;
and the data processing module is used for receiving the scanning result of the three-dimensional scanning component and calculating the warping degree of the wafer according to the scanning result.
2. The wafer warp measurement apparatus of claim 1,
the supporting component comprises more than three supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than the radius of the wafer.
3. The wafer warpage measuring device of claim 1, wherein the moving component controls the three-dimensional scanning component to move along an annular track, a plane of the annular track is perpendicular to a plane of the supporting component, and a center of the annular track coincides with a center of the supporting component.
4. The wafer warpage measuring apparatus of claim 1, wherein the scanning precision of the three-dimensional scanning component is sub-micron.
5. The apparatus of claim 1, wherein the scan results comprise a first scan result for an upper surface topography of the wafer and a second scan result for a lower surface topography of the wafer.
6. The wafer warp measurement device of claim 5, wherein the data processing module is specifically configured to:
receiving the first scan result and the second scan result of the three-dimensional scanning component;
respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result;
and calculating the warping degree of the wafer according to the coordinate data.
7. The wafer warp measurement device of claim 5, further comprising:
and the display module is used for receiving a first scanning result and a second scanning result of the three-dimensional scanning component and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result.
8. A wafer warp measurement method, comprising:
placing a wafer on a support member;
controlling the three-dimensional scanning component to move so that the three-dimensional scanning component finishes scanning the surface topography at different positions on the wafer to obtain a scanning result;
and calculating the warping degree of the wafer according to the scanning result.
9. The wafer warp measurement method of claim 8,
the supporting component comprises more than three supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than the radius of the wafer.
10. The wafer warp measurement method of claim 8, wherein said controlling the movement of the three-dimensional scan component comprises:
and controlling the three-dimensional scanning component to move along an annular track, wherein the plane of the annular track is vertical to the plane of the supporting component, and the circle center of the annular track is superposed with the center of the supporting component.
11. The method of claim 8, wherein the scanning accuracy of the three-dimensional scanning component is sub-micron.
12. The method as claimed in claim 8, wherein the scanning results include a first scanning result for the topography of the upper surface of the wafer and a second scanning result for the topography of the lower surface of the wafer.
13. The method of claim 12, wherein calculating the warp of the wafer according to the scan result comprises:
respectively obtaining coordinate data of each position of the upper surface of the wafer and the lower surface of the wafer according to the first scanning result and the second scanning result;
and calculating the warping degree of the wafer according to the coordinate data.
14. The wafer warp measurement method of claim 12, further comprising:
and displaying the three-dimensional model of the wafer according to the first scanning result and the second scanning result.
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