CN111884604A - Power supply and protection circuit of high-power microwave solid-state power amplifier - Google Patents
Power supply and protection circuit of high-power microwave solid-state power amplifier Download PDFInfo
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- CN111884604A CN111884604A CN202010786793.XA CN202010786793A CN111884604A CN 111884604 A CN111884604 A CN 111884604A CN 202010786793 A CN202010786793 A CN 202010786793A CN 111884604 A CN111884604 A CN 111884604A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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Abstract
The invention provides a power supply and protection circuit of a high-power microwave solid-state power amplifier, which comprises a microwave solid-state power amplifier temperature detection circuit unit, a microwave solid-state power amplifier grid voltage power supply circuit unit, a microwave solid-state power amplifier leakage voltage power supply and overvoltage and overcurrent protection circuit unit and a microwave solid-state power amplifier leakage voltage power supply and over-temperature and power supply time sequence protection circuit unit. The power supply and protection circuit of the high-power microwave solid-state power amplifier can supply power to the microwave solid-state power amplifier, can effectively protect the power amplifier when the high-power microwave solid-state power amplifier is in overvoltage, overcurrent, overtemperature and power-up time sequence errors, reduces economic loss and improves the stability and reliability of the power amplifier.
Description
Technical Field
The invention mainly relates to the technical field of electronic measurement and control, in particular to a power supply and protection circuit of a high-power microwave solid-state power amplifier.
Background
In microwave equipment, a high-power microwave solid-state power amplifier is one of key components in a system and is expensive, but the power amplifier has the requirements of grid voltage (negative voltage) and leakage voltage (positive voltage) power-on time sequence (negative first and positive second), and the power amplifier is burnt out due to time sequence errors. Meanwhile, the microwave solid-state power amplifier works under the conditions of overvoltage, overcurrent and overtemperature, and the power amplifier is damaged.
Disclosure of Invention
1. Objects of the invention
The invention provides a power supply and protection circuit of a high-power microwave solid-state power amplifier, which effectively protects the power amplifier when the high-power microwave solid-state power amplifier generates overvoltage, overcurrent, overtemperature and power-on sequence errors, reduces economic loss and improves the stability and reliability of the power amplifier.
2. Summary of the invention
In order to achieve the purpose, the invention adopts the technical scheme that: a power supply and protection circuit of a high-power microwave solid-state power amplifier comprises an MCU (microprogrammed control Unit) controller, a temperature sensor, a DAC (digital-to-analog converter) converter, a voltage inverter, a voltage emitter-follower, a negative control positive circuit, a voltage sampling circuit, two voltage comparators, a current detection circuit, a logic gate-AND gate, a driver, an MOSFET (metal-oxide-semiconductor field effect transistor) and a microwave solid-state power amplifier; the MCU controller, the temperature sensor and the logic gate are connected with the AND gate to form a microwave solid-state power amplifier temperature detection circuit unit; the MCU controller, the DAC converter, the voltage inverter, the voltage emitter and the microwave solid-state power amplifier are connected to form a microwave solid-state power amplifier grid voltage power supply circuit unit; the MCU controller, the DAC converter, the voltage sampling circuit, the two voltage comparators, the current detection circuit, the logic gate-AND gate, the driver, the MOSFET and the microwave solid-state power amplifier are connected, so that a microwave solid-state power amplifier voltage leakage power supply and overvoltage and overcurrent protection circuit unit is formed; the MCU controller, the DAC converter, the voltage inverter, the negative control positive circuit, the logic gate-AND gate, the driver, the MOSFET and the microwave solid-state power amplifier are connected, so that a microwave solid-state power amplifier power supply time sequence protection circuit unit is formed.
Furthermore, the temperature sensor is connected with the MCU controller, and an enable switch of the MCU controller is connected with an input end of the logic gate and the AND gate; the MCU controller is connected with the DAC converter, the DAC converter is connected with the voltage inverter, the output end of the voltage inverter is connected with the voltage emitter follower and the negative control positive circuit, the voltage emitter follower is connected with the grid electrode of the microwave solid-state power amplifier, and the negative control positive circuit is connected with the input end of the logic gate and the AND gate; the DAC converter is connected with a plus input end of one of the voltage comparators, an minus input end of the voltage comparator is connected with the voltage sampling circuit, and an output end of the voltage comparator is connected with one input end of the logic gate-AND gate; the DAC converter is connected with a plus input end of another voltage comparator, an minus input end of the voltage comparator is connected with the current detection circuit, and an output end of the voltage comparator is connected with one input end of the logic gate-AND gate; the output end of the logic gate-AND gate is connected with the driver, and the driver, the current detection circuit and the drain electrode of the microwave solid-state power amplifier are connected with the MOSFET.
Further, the MCU controller receives data of a temperature sensor, the temperature sensor is used for detecting the temperature of the microwave solid-state power amplifier, and simultaneously the leakage voltage power supply state of the microwave solid-state power amplifier is controlled through the logic gate-AND gate.
Furthermore, the negative control positive circuit is respectively connected with the voltage inverter and the logic gate-and gate, so that the logic relation that negative voltage precedes positive voltage is realized, the power-on time sequence of the microwave solid-state power amplifier after grid voltage first and leakage voltage later is ensured, and the power-on safety of the power amplifier is provided.
Furthermore, the voltage sampling circuit and the current detection circuit respectively realize the functions of collecting the power supply voltage of the microwave solid-state power amplifier and Vdd and collecting the current of the microwave solid-state power amplifier, and meanwhile, the current detection circuit also realizes the function of current-voltage conversion.
Furthermore, the two voltage comparators respectively realize the comparison of the maximum working voltage of the microwave solid-state power amplifier with the reference voltage and the comparison of the maximum working current of the microwave solid-state power amplifier with the reference voltage.
Further, the kind of MOSFET includes, but is not limited to, P-MOSFET and N-MOSFET.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
the power supply and protection circuit for the high-power microwave solid-state power amplifier supplies power to the microwave solid-state power amplifier, can effectively protect the power amplifier when the high-power microwave solid-state power amplifier is in overvoltage, overcurrent, overtemperature and power-up time sequence errors, reduces economic loss, and improves the stability and reliability of the power amplifier.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a block diagram of a protection circuit in a preferred embodiment of the present invention.
Reference numerals: U1-MCU controller; u2-temperature sensor; U3-DAC converter; u4-voltage inverter; U5-Voltage follower; u6-negative control positive circuit; U7-Voltage sampling Circuit; u8-voltage comparator; u9-circuit detection circuit; u10-voltage comparator; u11-logic gate-and gate; u12-drive; U13-MOSFET; u14-microwave solid state power amplifier.
Detailed Description
Reference will now be made in detail to various exemplary embodiments of the invention, the detailed description should not be construed as limiting the invention but as a more detailed description of certain aspects, features and embodiments of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the specific embodiments of the present disclosure without departing from the scope or spirit of the disclosure. Other embodiments will be apparent to those skilled in the art from consideration of the specification. The specification and examples are exemplary only.
A power supply and protection circuit of a high-power microwave solid-state power amplifier comprises an MCU (microprogrammed control Unit) controller U1, a temperature sensor U2, a DAC (digital-to-analog converter) U3, a voltage inverter U4, a voltage emitter follower U5, a negative control positive circuit U6, a voltage sampling circuit U7, a voltage comparator U8, a current detection circuit U9, a voltage comparator U10, a logic gate and gate U11, a driver U12, a MOSFET U13 and a microwave solid-state power amplifier U14; the MCU controller U1, the temperature sensor U2 and the logic gate and gate U11 are connected to form a microwave solid-state power amplifier temperature detection circuit unit; the MCU controller U1, the DAC converter U3, the voltage inverter U4, the voltage emitter U5 and the microwave solid-state power amplifier U14 are connected to form a microwave solid-state power amplifier grid voltage power supply circuit unit; the MCU controller U1, the DAC converter U3, the voltage sampling circuit U7, the voltage comparator U8, the current detection circuit U9, the voltage comparator U10, the logic gate and gate U11, the driver U12, the MOSFET U13 and the microwave solid-state power amplifier U14 are connected, so that a leakage voltage power supply and overvoltage and overcurrent protection circuit unit of the microwave solid-state power amplifier is formed; the MCU controller U1, the DAC converter U3, the voltage inverter U4, the negative control positive circuit U6, the logic gate and gate U11, the driver U12, the MOSFET U13 and the microwave solid-state power amplifier U14 are connected, so that a power supply time sequence protection circuit unit of the microwave solid-state power amplifier is formed.
Referring to fig. 1, the temperature sensor U2 is connected to the MCU controller U1, and the MCU controller U1 enables the switch to be connected to an input terminal of the logic gate and gate U11; the MCU controller U1 is connected with the DAC converter U3, the DAC converter U3 is connected with the voltage inverter U4, the output end of the voltage inverter U4 is connected with the voltage emitter follower U5 and the negative control positive circuit U6, the voltage emitter follower U5 is connected with the grid electrode of the microwave solid-state power amplifier U14, and the negative control positive circuit U6 is connected with one input end of the logic gate-AND gate U11; the DAC U3 is connected to the "+" input terminal of the voltage comparator U8, the "-" input terminal of the voltage comparator U8 is connected to the voltage sampling circuit U7, and the output terminal of the voltage comparator U8 is connected to one input terminal of the logic gate AND gate U11; the DAC U3 is connected to the "+" input terminal of the voltage comparator U9, the "-" input terminal of the voltage comparator U10 is connected to the current detection circuit U9, and the output terminal of the voltage comparator U10 is connected to one input terminal of the logic gate AND gate U11; the output end of the logic gate and gate U11 is connected with the driver U12, and the drains of the driver U12, the current detection circuit U9 and the microwave solid-state power amplifier U14 are connected with the MOSFET U13.
The MCU controller U1 receives data of a temperature sensor U2, the temperature sensor U2 is used for detecting the temperature of the microwave solid-state power amplifier U14, and simultaneously the voltage-leakage power supply state of the microwave solid-state power amplifier U14 (namely a microwave solid-state power amplifier pin D) is controlled through the logic gate and gate U11; the MCU controller U1 is connected with the DAC converter U3; the MCU controller U1 controls the output voltage (namely the voltage at A, B, C in the figure) of the DAC U3, and the three-point voltage is adjustable through the MCU; the voltage inverter U4 is used for inverting the output voltage of the DAC U3 to realize the conversion from positive voltage to negative voltage; the voltage emitter-follower U5 is used for enhancing the negative pressure loading capacity; the negative control positive circuit U6 is respectively connected with the voltage inverter U4 and the logic gate and gate U11, so that the logic relation that negative voltage precedes positive voltage is realized, the power-on time sequence of the microwave solid-state power amplifier U14 is ensured to firstly carry out grid voltage (-Vg) and then carry out leakage voltage (+ Vd), and the power-on safety of the power amplifier is provided.
The voltage sampling circuit U7 and the current detection circuit U9 respectively realize the collection of the power supply voltage of the microwave solid-state power amplifier U14+ Vdd and the collection of the current of the microwave solid-state power amplifier U14, and meanwhile, the current detection circuit U9 also realizes the conversion function of current-voltage.
The voltage comparator U8 and the voltage comparator U10 respectively realize the comparison of the maximum working voltage of the microwave solid-state power amplifier with the reference voltage (voltage at the point A) and the comparison of the maximum working current of the microwave solid-state power amplifier with the reference voltage (voltage at the point B).
The class of MOSFETs U13 includes, but is not limited to, P-MOSFETs and N-MOSFETs.
In this embodiment, the logic gate and gate U11 is respectively connected to the MCU controller U1, the negative control positive circuit U6, the voltage comparator U8, the voltage comparator U10, and the driver U12, and is configured to collect preconditions for turning on the microwave solid-state power amplifier, such as no overvoltage, no overcurrent, no overtemperature, and normal gate voltage (-Vg), and then the driver U12 starts to operate, the driver U12 is connected to the MOSFET U13, and the driver U12 provides a driving operating voltage for the MOSFET U13, so that the MOSFET U13 is turned on or off.
In conclusion, the power supply and protection circuit can supply power for the microwave solid-state power amplifier, has the functions of overvoltage, overcurrent, overtemperature and power supply time sequence protection of the microwave solid-state power amplifier, and effectively improves the working stability and reliability of the microwave solid-state power amplifier.
The foregoing is merely an illustrative embodiment of the present invention, and any equivalent changes and modifications made by those skilled in the art without departing from the spirit and principle of the present invention should fall within the protection scope of the present invention.
Claims (5)
1. A power supply and protection circuit of a high-power microwave solid-state power amplifier is characterized by comprising an MCU controller (U1), a temperature sensor (U2), a DAC converter (U3), a voltage inverter (U4), a voltage emitter follower (U5), a negative control positive circuit (U6), a voltage sampling circuit (U7), a voltage comparator (U8), a current detection circuit (U9), a voltage comparator (U10), a logic gate-AND gate (U11), a driver (U12), an MOSFET (U13) and a microwave solid-state power amplifier (U14);
the MCU controller (U1), the temperature sensor (U2) and the logic gate and gate (U11) are connected to form a microwave solid-state power amplifier temperature detection circuit unit; the MCU controller (U1), the DAC converter (U3), the voltage inverter (U4), the voltage emitter-follower (U5) and the microwave solid-state power amplifier (U14) are connected to form a microwave solid-state power amplifier grid voltage power supply circuit unit; the MCU controller (U1), the DAC converter (U3), the voltage sampling circuit (U7), the voltage comparator (U8), the current detection circuit (U9), the voltage comparator (U10), the logic gate-AND gate (U11), the driver (U12), the MOSFET (U13) and the microwave solid-state power amplifier (U14) are connected, so that a leakage voltage power supply and overvoltage and overcurrent protection circuit unit of the microwave solid-state power amplifier is formed; the MCU controller (U1), the DAC converter (U3), the voltage inverter (U4), the negative control positive circuit (U6), the logic gate-AND gate (U11), the driver (U12), the MOSFET (U13) and the microwave solid-state power amplifier (U14) are connected, and therefore the microwave solid-state power amplifier power supply time sequence protection circuit unit is formed.
2. The power supply and protection circuit of a high-power microwave solid-state power amplifier according to claim 1, characterized in that said temperature sensor (U2) is connected with said MCU controller (U1), said MCU controller (U1) enables the switch to connect with an input end of said logic gate-AND gate (U11);
the MCU controller (U1) is connected with the DAC converter (U3), the DAC converter (U3) is connected with the voltage inverter (U4), the output end of the voltage inverter (U4) is connected with the voltage emitter follower (U5) and the negative control positive circuit (U6), the voltage emitter follower (U5) is connected with the gate of the microwave solid-state power amplifier (U14), and the negative control positive circuit (U6) is connected with one input end of the logic gate-AND gate (U11);
the DAC (U3) is connected with the "+" input end of the voltage comparator (U8), the "-" input end of the voltage comparator (U8) is connected with the voltage sampling circuit (U7), and the output end of the voltage comparator (U8) is connected with one input end of the logic gate-AND gate (U11);
the DAC (U3) is connected with the + input end of the voltage comparator (U9), the-input end of the voltage comparator (U10) is connected with the current detection circuit (U9), and the output end of the voltage comparator (U10) is connected with one input end of the logic gate-AND gate (U11);
the output end of the logic gate-AND gate (U11) is connected with the driver (U12), and the drains of the driver (U12), the current detection circuit (U9) and the microwave solid-state power amplifier (U14) are connected with the MOSFET (U13).
3. The power supply and protection circuit of a high-power microwave solid-state power amplifier according to claim 1, wherein the MCU controller (U1) receives data of a temperature sensor (U2), the temperature sensor (U2) is used for detecting the temperature of the microwave solid-state power amplifier (U14), and the voltage-leakage power supply state of the microwave solid-state power amplifier (U14) is controlled by the logic gate-AND gate (U11).
4. The power supply and protection circuit of a high-power microwave solid-state power amplifier according to claim 1, wherein the voltage sampling circuit (U7) and the current detection circuit (U9) respectively realize the functions of collecting the power supply voltage of the microwave solid-state power amplifier (U14) + Vdd and collecting the current of the microwave solid-state power amplifier (U14), and the current detection circuit (U9) also realizes the function of current-voltage conversion.
5. The power supply and protection circuit of claim 1, wherein said MOSFET (U13) is of the type including but not limited to P-MOSFET and N-MOSFET.
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| CN202010786793.XA CN111884604B (en) | 2020-08-07 | 2020-08-07 | High-power microwave solid-state power amplifier power supply and protection circuit |
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| CN202010786793.XA CN111884604B (en) | 2020-08-07 | 2020-08-07 | High-power microwave solid-state power amplifier power supply and protection circuit |
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| CN111884604B CN111884604B (en) | 2024-04-09 |
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