CN111884030A - Quick tuning control system based on series-parallel array laser - Google Patents
Quick tuning control system based on series-parallel array laser Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1028—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1317—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
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Abstract
The invention discloses a fast tuning control system based on series-parallel array lasers, which comprises a central control module, a current stabilizing module, a switch module, a temperature control module, a laser array module and a power control module, wherein the central control module is respectively and electrically connected with the current stabilizing module, the temperature control module and the switch module; the central control module is used for sending control information of current, channel selection and temperature. The invention can accurately provide working current for each channel of the laser array module, and synchronously carry out the opening and the closing of the channels according to the control signal so as to complete the rapid switching of the wavelength of the laser, thereby realizing the rapid tuning of the wavelength of the emergent signal; and finally, controlling the output signal power of the tunable laser through the EDFA.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a quick tuning control system based on series-parallel array lasers.
Background
Under the conditions that the internet traffic is increased in geometric progression and the user demand is continuously improved, the optical communication industry occupying the absolute dominant position in the communication field also faces the pressure of technical upgrading and pushing the advanced development of the industry: the rapidly-growing big data needs more data center infrastructures to bear, and in the 5G era, high-performance optical modules matched with high bandwidths are needed at the base station level, the transmission network level and the access network level; in future network solutions, no matter the data capacity is expanded or the flexibility of the network is improved, and the network architecture is dynamically changed, a large number of wavelength tunable semiconductor lasers need to be used in network equipment. The fast tunable laser has very important value in related applications, for example, in a data center, optical information exchange is realized by using source end wavelength switching based on the fast tunable laser, so that the requirements of high-speed, large-capacity and effective data exchange functions required by large-scale and low-delay switching nodes are met. The fast tunable laser not only has important application in the communication field, but also can be applied to a plurality of fields such as laser radar, optical sensing, test measurement system, and the tunable index parameters of the laser, such as wavelength switching speed, wavelength interval, precision and the like, have decisive effect on the performance of the system.
The main types of tunable lasers currently include External Cavity (ECL) lasers, Distributed Feedback (DFB) lasers, Distributed Bragg Reflector (DBR) lasers, and vertical Cavity surface emitting lasers. The external cavity feedback type tunable laser has narrow line width, good single-mode characteristic and large tuning range, but is limited by a wavelength tuning mode of mechanical tuning, and has slower tuning speed; the number of channels integrated by a tunable light source based on a DFB laser is limited at present, and the tuning speed is determined to be slow by a thermal balance process existing in a thermal tuning mode of the tunable light source; the DBR type tunable laser is tuned by current, the tuning speed is high, but the mode stability is poor due to the vernier effect; the vertical cavity surface emitting laser has a fast switching speed, but has poor single-mode characteristics and low power, and is not suitable for long-distance communication networks. With conventional tunable laser principles, it is difficult to obtain a stable tunable laser that switches in sub-microsecond time scales.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a fast tuning control system based on series-parallel array lasers, aiming at the above-mentioned deficiencies of the prior art.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
quick tuning control system based on series-parallel array laser, wherein: the laser power control system comprises a central control module, a current stabilizing module, a switch module, a temperature control module, a laser array module and a power control module, wherein the central control module is respectively electrically connected with the current stabilizing module, the temperature control module and the switch module;
the central control module is used for sending control information of current, channel selection and temperature;
the current stabilizing module is used for receiving a signal of the control current from the central control module and outputting a controllable driving current;
the switch module is used for switching the wavelength of the switch of the current stabilizing module and the wavelength of the laser array module;
the laser array module comprises a plurality of single-wavelength lasers connected in series and parallel, and the corresponding single-wavelength lasers are lightened according to the wavelength switching signal of the switch module;
the temperature control module is used for controlling the temperature in the laser array module to be a preset value;
the power control module is used for controlling the output light power to be a preset value.
In order to optimize the technical scheme, the specific measures adopted further comprise:
furthermore, the central control module comprises an MCU chip and an FPGA chip, the MCU chip is connected with the FPGA chip through a bus, the MCU chip processes signals of control current, a channel switch and temperature received from the upper computer and transmits the signals to the FPGA chip, the FPGA chip processes instructions and transmits the control current signals to the current stabilizing module, the channel switch signals to the switch module and the temperature signals to the temperature control module.
Furthermore, the current stabilization module comprises a DAC unit and a voltage-controlled constant current circuit based on negative feedback, wherein the voltage-controlled constant current circuit comprises a voltage input unit, a negative feedback control unit, a current sampling unit and a voltage-current conversion unit;
the DAC unit is electrically connected with the voltage input unit, the input end of the negative feedback control unit is electrically connected with the voltage input unit and the current sampling unit respectively, the output end of the negative feedback control unit is electrically connected with the voltage current conversion unit, and the output end of the current sampling unit and the output end of the voltage current conversion unit are electrically connected with the switch module.
Further, the negative feedback control unit comprises a resistor R5, a resistor Rf, a capacitor C1 and an operational amplifier A3, wherein the resistor R5 is respectively connected with the current sampling unit and the inverting input end of the operational amplifier A3, and the resistor Rf and the capacitor C1 are both connected in parallel with the inverting input end and the output end of the operational amplifier A3;
the current sampling unit comprises resistors R1, R2, R3, R6 and an operational amplifier A2, wherein the resistors R1 and R2 are connected in parallel, the resistors R1 and R2 are both connected with the non-inverting input end of the operational amplifier A2, the resistor R3 is connected with the output end of the operational amplifier A2 and the resistor R6, the resistor R6 is connected with the inverting input end of the operational amplifier A2 and the switch module, and the resistor R5 is connected with the output end of the operational amplifier A2;
the voltage input unit comprises a resistor R4 and a capacitor C2 which are connected in parallel, and the resistor R4 and the capacitor C2 are both connected with the non-inverting input end of an operational amplifier A3;
the voltage and current conversion unit comprises a resistor R7, a triode Q2 and a resistor R8, the resistor R7 is connected with the output end of an operational amplifier A3, the base of the triode Q2 is connected with a resistor R7, the emitter of the triode Q2 is connected with the resistor R8, the resistor R8 is connected with the single-wavelength laser, and the collector of the triode Q2 is connected with the current sampling unit and the switch module respectively.
Further, the switch module includes resistors R9, R10, R11, R12, R13, R14, R15, an operational amplifier a1 and a P-type mosfet Q1, the resistor R9 is connected to the FPGA chip to receive the switch signal, a non-inverting input terminal and an inverting input terminal of the operational amplifier a1 are connected to the resistor R9 and the resistor R10, an output terminal of the operational amplifier a1 is connected to the resistor R12, a resistor R11 is connected in series between the resistor R10 and the resistor R12, the resistor R12 is connected to the resistors R13 and Q1, a drain of the P-type mosfet Q1 is connected to the laser array module, a source of the P-type mosfet Q1 is connected to the resistor R6, and two ends of the P-type mosfet Q1 are connected in parallel to the resistor R7.
Further, when the switching signal is at a low level, the P-type mosfet Q1 is turned on, the driving current exceeds the threshold current of the single-wavelength laser, and the single-wavelength laser is turned on; conversely, when the switching signal is at a high level, the P-type mosfet Q1 is turned off, and the single-wavelength laser is turned off.
Further, the temperature control module comprises a PID controller, a TEC driver and a TEC chip, the PID controller, the TEC driver and the TEC chip are sequentially electrically connected, the TEC chip is electrically connected with a thermistor in the single-wavelength laser, and the thermistor is electrically connected with the PID controller.
Further, the power control module comprises an erbium-doped fiber amplifier, and the erbium-doped fiber amplifier is connected with the MCU chip bus.
Furthermore, a pi phase shift structure is introduced into each single-wavelength laser in the laser array module, and the pi phase shift structure is used for improving the single-mode characteristics of the single-wavelength lasers.
The invention has the beneficial effects that:
according to the rapid tuning control system based on the series-parallel array lasers, when the lasers work, the lasers in the working state load working current, the rest lasers all load transparent current, and the selection and the switching of the wavelength are completed by the control circuit.
The laser array module is matched with the plurality of modules, the current stabilizing module provides current stabilizing drive and the temperature control module ensures that the working wavelength of the laser array module is stable, and the power control module outputs stable optical power to the laser array module.
The invention can realize the rapid and stable switching of multi-wavelength, the switching time can be less than 300ns, the system stability is strong, the flexibility is high, and the wavelength tuning range and the wavelength switching speed can be further improved on the premise of improving the array chip structure and optimizing the circuit system, thereby realizing the purpose of rapid and stable tuning in a large range.
Drawings
FIG. 1 is a diagram of a series-parallel array chip of the present invention;
FIG. 2 is a block diagram illustrating the module connection process of the present invention;
FIG. 3 is a graph of channel wavelength switching time of the present invention;
FIG. 4 is a schematic diagram of the central control module configuration of the present invention;
FIG. 5 is a current stabilization module circuit diagram of the present invention;
FIG. 6 is a circuit diagram of a switch module of the present invention;
FIG. 7 is a graph showing the comparative effect of the present invention with or without transparent current;
fig. 8 is a circuit diagram of a temperature control module of the present invention.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
As shown in fig. 1, a schematic diagram of a 4 × 4 series-parallel tunable light source chip is shown, that is, how many channels of a tunable light source exist, how many DFB lasers are designed in the series-parallel chip, what wavelength is needed by an external device, and the light source lights the DFB lasers with corresponding wavelengths, so as to implement wavelength tuning.
The light source chip integrates 16 lasers with different wavelengths on the same optical chip in a single chip, one of the lasers is selected to work through a control circuit and is completed by a circuit part; in the laser array structure, the laser in working state is processed with working current, and all the other lasers are added with transparent current (the transparent current is less than the working current). When the light source works, the output of the corresponding wavelength is realized by continuously changing the current of the laser corresponding to the required wavelength; transparent current is added to all the other lasers which are connected in series and close to the light output end (the transparent current is smaller than a threshold value and is not enough for the lasers to emit light, and meanwhile, the absorption loss of the materials to the light can be offset); only lasers of the desired wavelength are energized. Therefore, the wavelength tuning can be realized by switching the working state of the DFB laser with the corresponding wavelength in the laser array, the tuning process is fast, the laser single-mode can be kept stable in the switching process, and the switching speed of the submicrosecond level can be realized.
As shown in fig. 2, a schematic diagram of a module connection process according to the present invention includes a central control module, a current stabilization module, a switch module, a temperature control module, a laser array module, and a power control module, where the central control module is formed by connecting an MCU chip and an FPGA chip through a Local Bus and is responsible for sending control information such as current, channel selection, temperature, etc. to other modules;
the current stabilizing module consists of a DAC unit and a voltage-controlled constant current circuit based on negative feedback and is responsible for receiving a signal of the current magnitude from the central control module and outputting controllable driving current;
the switch module consists of a homodromous amplifying circuit and a P-channel metal-oxide-semiconductor field effect transistor Q1 and is responsible for completing the switching of the current stabilization module so as to realize the wavelength switching of the laser array;
the temperature control module consists of a PID control circuit and a TEC driving circuit and is responsible for controlling the temperature in the laser array to be close to a preset value;
the power control module is composed of a programmable erbium-doped fiber amplifier, is controlled by the MCU and is responsible for controlling the output light power to be a preset value.
After a control instruction sent from the upper computer is sent to the MCU chip through the serial port, the temperature of the laser array and the power of emergent light are directly controlled by the MCU chip, and the current of each channel and the channel selection are processed by the FPGA chip and then sent to the switch module so as to complete the rapid switching between any channels. Fig. 3 selects the switching waveforms between the four channels and measures the final switching time to be below 300 ns.
In order to realize fast switching, the system utilizes the advantage that the FPGA chip can process data quickly in parallel, and connects the MCU chip and the FPGA chip through Local Bus to form a central control module, as shown in fig. 4, 19 IOs of the MCU are connected to the FPGA and defined as 8-bit data bits (din [7:0]), 8-bit address bits (addr [7:0]), 1-bit read control bits (read), 1-bit write control bits (write), and 1-bit chip select signals (CS), respectively.
After the upper computer sends a control instruction to the MCU chip through serial port communication, the MCU chip sends a data signal din [7:0] and an address addressing signal addr [7:0] to the FPGA chip through Local Bus, the data signal comprises information of the on-off state, the opening time delay and the current magnitude of different channel lasers, and the data signal is directly sent to the D end of the D trigger module; the address addressing signal is decoded by a decoder module, and the decoding result is sent to the clock end of the D trigger; the D trigger selectively sends data signals to the current stabilizing module and the switch control module through judging the clock end signals, and control over wavelength switching of each laser array is achieved. In addition, the MCU chip is connected with the EDFA chip through an I2C interface to directly control the light output power, and a DAC chip interface on the MCU chip is connected with the temperature control part to control the temperature of the laser array.
The laser driving circuit adopts a voltage-controlled constant-current structure based on a negative feedback technology, as shown in fig. 5, the main body part of the driving circuit is a voltage-controlled constant-current source formed by cascading two operational amplifiers a2, A3 and a triode Q2, a DAC controlled by an FPGA outputs voltage to the non-inverting input end of the operational amplifier A3, the constancy of the working current and the working voltage of the whole circuit is adjusted through negative feedback, so as to achieve the aim of stably driving the laser to work, and the current is further amplified by the triode Q2 at the output end of the operational amplifier A3.
In the above circuit, when R1 is R2 and R3 is R6, the relationship between the current output from the collector of the transistor Q2 and the input current Vin is:
wherein, IOUTFor the current output to the laser, VINVoltage supplied to DAC, UledFor the voltage across the laser during operation, by adjusting the input voltage VINThe output current can be adjusted to the driving current value required by the laser. From the above formula, when the circuit parameters and the laser operating voltage are determined, the output current is only related to the input voltage, and the current magnitude does not fluctuate with the change of the on-resistance of the transistor Q2 and the P-type mosfet Q1, and is a constant current output, so that the stability is high.
In the negative feedback-based voltage-controlled constant current circuit shown in fig. 5, the resistor R4 and the capacitor C2 constitute a voltage input unit; the resistor R7, the triode Q2 and the resistor R8 form a voltage-current conversion unit; the resistors R1, R2, R3, R6 and the operational amplifier A2 form a current sampling unit; the resistor R5, Rf, the capacitor C1 and the operational amplifier A3 constitute a negative feedback control unit, and D1 is a single laser.
Referring to fig. 6, the system adopts an analog switch switching manner, and controls the on/off of the P-type mosfet Q1 by using high and low levels, thereby controlling the on/off of the driving circuit. The control signal from the FPGA is first amplified in the same direction by the high speed operational amplifier a1 to be enough to turn the pmos transistor Q1 on and off completely. When the switch signal is at a low level, the switch is switched on, the driving current exceeds the threshold current of the laser, and the laser is lightened; on the contrary, when the switching signal is at a high level, the power of the P-type mosfet Q1 is turned off, the switch is turned off, and the laser is turned off. Compared with the switch of the direct control DAC, the switch delay of the P-type metal oxide semiconductor field effect transistor Q1 is about 20ns, and the time delay is far less than the time delay caused by the direct control of the DAC, so that the switching speed of the laser channel is greatly improved.
The laser used in the system is in a series-parallel structure, and when the laser far away from the light outlet in the series laser array emits light, a transparent current below a threshold value needs to be added to the front laser, so that relaxation oscillation of the laser in the switching process can be eliminated. As shown in fig. 7(a), in the absence of the transparent current during the switching process, the switching process has a waveform oscillating back and forth, which greatly prolongs the duration of the wavelength switching process. In order to eliminate the effect of this phenomenon on the switching time, the present system connects a resistor with an appropriate value beside the MOSFET, so that when the switching tube is turned off, a transparent current with a magnitude near the threshold is still applied to the laser, thereby greatly improving the stability of the waveform during the switching process, as shown in fig. 7 (b).
When the laser works, in order to ensure the accuracy of laser wavelength and prolong the service life of the laser, the temperature stability of the laser array during working must be ensured, and therefore, a temperature control system is added into the system.
Schematic diagram of temperature control module as shown in fig. 8, the TEC is integrated in the laser package and is driven by an external TEC driver to keep the temperature stable. The temperature control part utilizes a PID controller, and the PID controller outputs a difference signal to the TEC driver by comparing a voltage value corresponding to a preset temperature with a voltage sampled from a thermistor end in the laser, so that the TEC is controlled to adjust the temperature of the laser until the preset temperature is reached. And finally, the output power of the laser is adjusted to an expected value through a power control module before the laser is output, and the gain degree can be directly adjusted through an MCU.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (9)
1. The fast tuning control system based on the series-parallel array lasers is characterized by comprising a central control module, a current stabilizing module, a switch module, a temperature control module, a laser array module and a power control module, wherein the central control module is respectively and electrically connected with the current stabilizing module, the temperature control module and the switch module;
the central control module is used for sending control information of current, channel selection and temperature;
the current stabilizing module is used for receiving a signal of the control current from the central control module and outputting a controllable driving current;
the switch module is used for switching the wavelength of the switch of the current stabilizing module and the wavelength of the laser array module;
the laser array module comprises a plurality of single-wavelength lasers connected in series and parallel, and the corresponding single-wavelength lasers are lightened according to the wavelength switching signal of the switch module;
the temperature control module is used for controlling the temperature in the laser array module to be a preset value;
the power control module is used for controlling the output light power to be a preset value.
2. The fast tuning control system based on series-parallel array laser of claim 1, characterized in that: the central control module comprises an MCU chip and an FPGA chip, the MCU chip is connected with the FPGA chip through a bus, the MCU chip processes signals of control current, a channel switch and temperature received from an upper computer and transmits the signals to the FPGA chip, the FPGA chip processes instructions and transmits the control current signals to the current stabilizing module, the channel switch signals to the switch module and the temperature signals to the temperature control module.
3. The fast tuning control system based on series-parallel array laser of claim 2, characterized in that: the current stabilization module comprises a DAC unit and a voltage-controlled constant current circuit based on negative feedback, wherein the voltage-controlled constant current circuit comprises a voltage input unit, a negative feedback control unit, a current sampling unit and a voltage-current conversion unit;
the DAC unit is electrically connected with the voltage input unit, the input end of the negative feedback control unit is electrically connected with the voltage input unit and the current sampling unit respectively, the output end of the negative feedback control unit is electrically connected with the voltage current conversion unit, and the output end of the current sampling unit and the output end of the voltage current conversion unit are electrically connected with the switch module.
4. The fast tuning control system based on series-parallel array laser of claim 3, characterized in that: the negative feedback control unit comprises a resistor R5, a resistor Rf, a capacitor C1 and an operational amplifier A3, wherein the resistor R5 is respectively connected with the current sampling unit and the inverting input end of the operational amplifier A3, and the resistor Rf and the capacitor C1 are both connected in parallel with the inverting input end and the output end of the operational amplifier A3;
the current sampling unit comprises resistors R1, R2, R3, R6 and an operational amplifier A2, wherein the resistors R1 and R2 are connected in parallel, the resistors R1 and R2 are both connected with the non-inverting input end of the operational amplifier A2, the resistor R3 is connected with the output end of the operational amplifier A2 and the resistor R6, the resistor R6 is connected with the inverting input end of the operational amplifier A2 and the switch module, and the resistor R5 is connected with the output end of the operational amplifier A2;
the voltage input unit comprises a resistor R4 and a capacitor C2 which are connected in parallel, and the resistor R4 and the capacitor C2 are both connected with the non-inverting input end of an operational amplifier A3;
the voltage and current conversion unit comprises a resistor R7, a triode Q2 and a resistor R8, the resistor R7 is connected with the output end of an operational amplifier A3, the base of the triode Q2 is connected with a resistor R7, the emitter of the triode Q2 is connected with the resistor R8, the resistor R8 is connected with the single-wavelength laser, and the collector of the triode Q2 is connected with the current sampling unit and the switch module respectively.
5. The fast tuning control system based on series-parallel array laser of claim 4, characterized in that: the switch module comprises resistors R9, R10, R11, R12, R13, R14, R15, an operational amplifier A1 and a P-type MOSFET Q1, wherein the resistor R9 is connected with an FPGA chip to receive a switch signal, a non-inverting input end and an inverting input end of the operational amplifier A1 are respectively connected with a resistor R9 and a resistor R10, an output end of the operational amplifier A1 is connected with a resistor R12, a resistor R11 is connected between the resistor R10 and the resistor R12 in series, the resistor R12 is respectively connected with a resistor R13 and a grid electrode of the P-type MOSFET Q1, a drain electrode of the P-type MOSFET Q1 is connected with the laser array module, a source electrode of the P-type MOSFET Q1 is connected with the resistor R6, and two ends of the P-type MOSFET Q1 are connected with a resistor R7 in parallel.
6. The fast tuning control system based on series-parallel array laser of claim 5, characterized in that: when the switching signal is at a low level, the P-type metal-oxide-semiconductor field effect transistor Q1 is turned on, the driving current exceeds the threshold current of the single-wavelength laser, and the single-wavelength laser is lightened; conversely, when the switching signal is at a high level, the P-type mosfet Q1 is turned off, and the single-wavelength laser is turned off.
7. The fast tuning control system based on series-parallel array laser of claim 1, characterized in that: the temperature control module comprises a PID controller, a TEC driver and a TEC chip, wherein the PID controller, the TEC driver and the TEC chip are sequentially electrically connected, the TEC chip is electrically connected with a thermistor in the single-wavelength laser, and the thermistor is electrically connected with the PID controller.
8. The fast tuning control system based on series-parallel array laser of claim 2, characterized in that: the power control module comprises an erbium-doped fiber amplifier, and the erbium-doped fiber amplifier is connected with the MCU chip bus.
9. The system of claim 1, wherein the fast tuning control system based on the series-parallel array laser comprises: and a pi phase shift structure is introduced into each single-wavelength laser in the laser array module and is used for improving the single-mode characteristic of the single-wavelength laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010597537.6A CN111884030B (en) | 2020-06-28 | 2020-06-28 | Quick tuning control system based on series-parallel array laser |
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| CN116954034A (en) * | 2023-07-10 | 2023-10-27 | 江苏影速集成电路装备股份有限公司 | Light source control method and system for laser direct writing exposure machine |
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| CN114374145A (en) * | 2022-01-12 | 2022-04-19 | 南京大学 | REC semiconductor laser array wavelength control system |
| CN114374145B (en) * | 2022-01-12 | 2023-09-29 | 南京大学 | REC semiconductor laser array wavelength control system |
| CN114488892A (en) * | 2022-01-18 | 2022-05-13 | 北京工业大学 | Laser irradiation control system, laser irradiation control method, apparatus, and medium |
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| CN114553318A (en) * | 2022-01-24 | 2022-05-27 | 南京大学 | Control system for ultrafast wavelength switching of multi-wavelength array laser |
| CN114777822A (en) * | 2022-04-18 | 2022-07-22 | 南京大学 | Fiber grating array synchronous sensing system based on multi-wavelength tunable laser |
| CN114777822B (en) * | 2022-04-18 | 2024-03-19 | 南京大学 | Fiber bragg grating array synchronous sensing system based on multi-wavelength tunable laser |
| CN116954034A (en) * | 2023-07-10 | 2023-10-27 | 江苏影速集成电路装备股份有限公司 | Light source control method and system for laser direct writing exposure machine |
| CN116954034B (en) * | 2023-07-10 | 2024-05-14 | 江苏影速集成电路装备股份有限公司 | Light source control method and system for laser direct writing exposure machine |
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