CN111883633B - Manufacturing method of display module and display screen - Google Patents
Manufacturing method of display module and display screen Download PDFInfo
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- CN111883633B CN111883633B CN202010635705.6A CN202010635705A CN111883633B CN 111883633 B CN111883633 B CN 111883633B CN 202010635705 A CN202010635705 A CN 202010635705A CN 111883633 B CN111883633 B CN 111883633B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000002096 quantum dot Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000001020 plasma etching Methods 0.000 claims abstract description 25
- 238000001914 filtration Methods 0.000 claims abstract description 12
- 238000007781 pre-processing Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 186
- 238000000034 method Methods 0.000 claims description 28
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
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- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- 239000003086 colorant Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The embodiment of the invention discloses a manufacturing method of a display module, which comprises the following steps: preprocessing a semiconductor epitaxial wafer to form a semiconductor device with a blue light LED array; forming a first transparent layer on a substrate surface of the semiconductor device; etching the first transparent layer to form a first opening exposing the substrate; forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer outside the first opening by a plasma etching mode so as to reserve the first quantum dot layer inside the first opening; and forming a DBR film layer for filtering blue light. According to the embodiment of the invention, the printing of the first quantum dots can realize submicron size and even nanometer size by using a plasma etching mode, and the printing precision of the quantum dots in the manufacturing method of the LED display screen is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a manufacturing method of a display module and a display screen.
Background
An LED (Light Emitting Diode) display screen is an electronic display screen composed of LED lattices and used for displaying various information such as characters, images, videos, and the like. The LED display screen divide into monochromatic screen, double-color screen and full-color screen, and monochromatic screen is the LED display screen who uses a colour, and double-color screen is the LED display screen who uses two kinds of colours (red and green), and full-color screen is the LED display screen who uses three kinds of colours (red, green and blue), and the colour range that full-color screen shows is widest, consequently by wide application.
At present, the LED and the quantum dot are combined to realize full-colorization of the display screen, the quantum dot is sprayed on the surface of a blue LED or a deep purple LED device in an ink-jet printing mode in the traditional manufacturing method, and the quantum dot is excited by a blue LED or a deep purple LED light source to enable the quantum dot to emit red light and green light, so that the full-colorization of the display screen is realized. However, the printing precision of the method for printing quantum dots by ink jet is usually only in the micron size range, and the ink jet printing cannot be realized for printing in submicron level.
Disclosure of Invention
In view of this, embodiments of the present invention provide a manufacturing method of a display module and a display screen, so as to improve the printing precision of quantum dots in the manufacturing method of an LED display screen.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a display module, including:
preprocessing a semiconductor epitaxial wafer to form a semiconductor device with a blue light LED array;
forming a first transparent layer on a substrate surface of the semiconductor device;
etching the first transparent layer to form a first opening exposing the substrate;
forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer;
etching away the first quantum dot layer outside the first opening by a plasma etching mode so as to reserve the first quantum dot layer inside the first opening;
and forming a DBR film layer for filtering blue light.
Further, the semiconductor epitaxial wafer comprises a first channel layer, a sapphire layer and a second channel layer which are sequentially grown on the sapphire substrate.
Further, the semiconductor epitaxial wafer is preprocessed to form a semiconductor device with a blue LED array, and the semiconductor device comprises:
carrying out mesa etching on the semiconductor epitaxial wafer to expose part of the first channel layer so as to form a blue light LED array;
forming a current diffusion layer on the surface of the second channel layer of the blue light array;
forming a reflecting electrode on the surface of the current diffusion layer and the exposed surface of the first channel layer;
forming a passivation layer covering the reflective electrode;
etching the passivation layer to form a bonding hole exposing a portion of the reflective electrode;
and forming a protective film on the surface of the blue LED array after the bonding holes are formed.
Further, before forming the first transparent layer on the substrate surface of the semiconductor device, the method further includes:
and polishing the substrate of the semiconductor device into a mirror surface.
Further, before forming the DBR film layer for filtering out blue light, the method further includes:
forming a second transparent layer on the surface of the first transparent layer and the surface of the first quantum dot layer;
etching the second transparent layer to form a second opening exposing the substrate;
forming a second quantum dot layer on the surface of the substrate exposed by the second opening and the surface of the second transparent layer;
and etching off the second quantum dot layer outside the second opening in a plasma etching mode to reserve the second quantum dot layer inside the second opening.
Further, forming a DBR film layer for filtering blue light includes:
forming a DBR film layer for filtering blue light on the surface of the second quantum dot layer and the surface of the second transparent layer;
and etching the DBR film layer to form a light hole exposing part of the second transparent layer.
Further, after forming the DBR film layer for filtering out blue light, the method includes:
and forming a transparent protective layer on the surface of the DBR film layer and the surface of the second transparent layer exposed by the light hole.
Further, after forming the DBR film layer for filtering out blue light, the method further includes:
removing the protective film on the surface of the blue LED array to expose the bonding holes;
and bonding the bonding hole with the bonding metal of the driving substrate.
Further, a first quantum dot layer is formed on the surface of the substrate exposed by the first opening and the surface of the first transparent layer, and the method includes:
and forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer by spin coating or deposition.
In a second aspect, an embodiment of the present invention provides a display screen, which includes a plurality of display modules, and the display modules are manufactured by the manufacturing method of the display module provided in any embodiment of the present invention.
According to the manufacturing method of the display module, the first quantum dots can be printed in a submicron size or even a nanometer size by using a plasma etching mode, and the printing precision of the quantum dots in the manufacturing method of the LED display screen is improved.
Drawings
Fig. 1 is a schematic flow chart illustrating a manufacturing method of a display module according to an embodiment of the present invention;
fig. 2 is a schematic flow chart illustrating a manufacturing method of a display module according to a second embodiment of the present invention;
fig. 3A is a schematic structural diagram of a semiconductor epitaxial wafer according to a second embodiment of the present invention;
fig. 3B is a schematic structural diagram of a semiconductor epitaxial wafer for initially forming a blue LED array according to a second embodiment of the present invention;
fig. 3C is a schematic structural diagram of a semiconductor epitaxial wafer for forming a current diffusion layer according to a second embodiment of the present invention;
fig. 3D is a schematic structural diagram of a semiconductor epitaxial wafer for forming a reflective electrode according to a second embodiment of the present invention;
fig. 3E is a schematic structural diagram of a semiconductor epitaxial wafer for forming a passivation layer and a bonding hole according to a second embodiment of the present invention;
fig. 3F is a schematic structural diagram of a semiconductor epitaxial wafer with a protective film formed thereon according to a second embodiment of the present invention;
fig. 3G is a schematic structural diagram of a semiconductor epitaxial wafer for forming a first transparent layer according to a second embodiment of the present invention;
fig. 3H is a schematic structural diagram of a semiconductor epitaxial wafer for forming a first quantum dot layer according to a second embodiment of the present invention;
fig. 3I is a schematic structural diagram of a semiconductor epitaxial wafer after plasma etching according to a second embodiment of the present invention is completed;
fig. 3J is a schematic structural diagram of a semiconductor epitaxial wafer for completing etching of the second quantum dot layer according to the second embodiment of the present invention;
fig. 3K is a schematic structural diagram of a semiconductor epitaxial wafer for forming a DBR layer according to a second embodiment of the present invention;
fig. 3L is a schematic structural diagram of a semiconductor epitaxial wafer for forming a transparent protection layer according to a second embodiment of the present invention;
fig. 3M is a schematic structural diagram of a display module according to a second embodiment of the present invention;
fig. 3N is a top view of a display module according to a second embodiment of the invention;
fig. 4 is a schematic structural diagram of a display screen according to a third embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Before discussing exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart may describe the steps as a sequential process, many of the steps can be performed in parallel, concurrently or simultaneously. In addition, the order of the steps may be rearranged. A process may be terminated when its operations are completed, but may have additional steps not included in the figure. A process may correspond to a method, a function, a procedure, a subroutine, a subprogram, etc.
Furthermore, the terms "first," "second," and the like may be used herein to describe various orientations, actions, steps, elements, or the like, but the orientations, actions, steps, or elements are not limited by these terms. These terms are only used to distinguish one direction, action, step or element from another direction, action, step or element. For example, a first opening may be referred to as a second opening, and similarly, a second opening may be referred to as a first opening, without departing from the scope of the present application. Both the first opening and the second opening are openings, but they are not the same opening. The terms "first", "second", etc. are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "plurality", "batch" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Example one
Fig. 1 is a schematic flow chart illustrating a manufacturing method of a display module according to an embodiment of the present invention, where the embodiment is applicable to manufacturing an LED display screen. As shown in fig. 1, a method for manufacturing a display module according to an embodiment of the present invention includes:
and S110, preprocessing the semiconductor epitaxial wafer to form a semiconductor device with a blue LED array.
Specifically, the semiconductor epitaxial wafer refers to blue light LED epitaxial structure, from the substrate up, includes in proper order: the sapphire substrate, the first channel layer, the sapphire layer and the second channel layer, wherein, the first channel layer is blue light N type GaN usually, and the sapphire layer is blue light QW (Quantum Well), and the second channel layer is blue light P type GaN usually. The blue light LED array refers to a plurality of blue light units which are arranged in an array form and can emit blue light after being electrified. The semiconductor device with the blue light LED array is the basis for manufacturing the LED display module, so that the semiconductor epitaxial wafer needs to be preprocessed to form the blue light LED array.
And S120, forming a first transparent layer on the surface of the substrate of the semiconductor device.
Specifically, a first transparent layer may be formed on the substrate surface of the semiconductor device by deposition, the first transparent layer is mainly used for transmitting light, and the material of the first transparent layer may be SiO2、MgF2ITO, etc. Need to make sure thatNote that the surface of the substrate refers to a surface on which the first channel layer is not grown.
S130, etching the first transparent layer to form a first opening exposing the substrate.
Specifically, firstly, the steps of glue spreading, pre-baking, photoetching, developing, post-baking and the like are sequentially carried out on the semiconductor device, a first opening pattern is defined on the first transparent layer, then the first transparent layer at the position of the first opening pattern is etched in a plasma etching mode, and therefore a first opening for exposing the substrate is formed in the first transparent layer.
And S140, forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer.
Specifically, the first quantum dot is a quantum dot capable of emitting light of a color different from blue light, such as a red quantum dot or a green quantum dot. The first quantum dot layer can be formed on the surface of the substrate exposed by the first opening and the surface of the first transparent layer by spin coating or deposition.
S150, etching away the first quantum dot layer outside the first opening in a plasma etching mode to reserve the first quantum dot layer inside the first opening.
Specifically, the semiconductor device processed in the above steps may be placed in an ICP (inductively Coupled Plasma Emission Spectrometer) or RIE (Reactive Ion Etching) device, and the first quantum dot layer outside the first opening is etched by a Plasma Etching method, so that the first quantum dot layer inside the first opening is retained, and the first quantum dot is printed inside the first opening. The principle of plasma etching is that a gas exposed to an electron region forms a plasma, the resulting ionized gas and gas released energetic electrons form a plasma or ions, and when the ionized gas atoms are accelerated by an electric field, they release sufficient force to repel the surface and tightly adhere the material or etch the surface. In this embodiment, a plasma etching manner is used, so that the printing of the first quantum dots can realize a submicron size or even a nanometer size.
And S160, forming a DBR film layer for filtering blue light.
Specifically, a DBR (Distributed Bragg Reflector) film is a periodic structure formed by alternately arranging two materials having different refractive indexes, and the light transmittance of the DBR film can be changed by changing the reflectivity, thickness, and gap of the materials. In order to prevent the blue light from transmitting at the first quantum dot layer, a DBR layer for filtering the blue light may be formed on the surface of the first quantum dot layer.
According to the manufacturing method of the display module, the first quantum dots can be printed in a submicron size or even a nanometer size by using a plasma etching mode, and the printing precision of the quantum dots in the manufacturing method of the LED display screen is improved.
Example two
Fig. 2 is a schematic flow chart of a manufacturing method of a display module according to a second embodiment of the present invention, which further details the above embodiment. As shown in fig. 2, a method for manufacturing a display module according to a second embodiment of the present invention includes:
s201, mesa etching is conducted on the semiconductor epitaxial wafer, and a part of the first channel layer is exposed to form a blue light LED array.
In this embodiment, the structure of the semiconductor epitaxial wafer is as shown in fig. 3A, and includes a sapphire substrate 10, a first channel layer 11, a blue light layer 12, and a second channel layer 13, where the first channel layer 11 is blue light N-type GaN, the blue light layer 12 is blue light QW, and the second channel layer 13 is blue light P-type GaN.
Mesa etching is performed on the semiconductor epitaxial wafer, namely photoetching and plasma etching are used, so that the blue light LED array is formed on the semiconductor initially, and the structure of the etched semiconductor epitaxial wafer is shown in FIG. 3B.
And S202, forming a current diffusion layer on the surface of the second channel layer of the blue light array.
Specifically, the current diffusion layer is mainly used for forming ohmic contact with the P-type GaN, and therefore, the current diffusion layer is formed on the surface of the second channel layer. The current diffusion layer may be formed sequentially through photolithography, metal evaporation and photoresist stripping, wherein the material of the current diffusion layer may be ITO or Ni/Au. Illustratively, the semiconductor epitaxial wafer structure forming the current diffusion layer 14 is shown in fig. 3C.
And S203, forming a reflecting electrode on the surface of the current diffusion layer and the exposed surface of the first channel layer.
Specifically, the reflective electrode is mainly used to improve the light emitting efficiency of the LED. The reflecting electrode can be made by the steps of photoetching, metal evaporation and photoresist stripping, and the material of the reflecting electrode can be Ti/AL/Ti/Au, Cr/Ti/Au or Pt/Au and other metal materials. Illustratively, the structure of the semiconductor epitaxial wafer on which the reflective electrode 15 is formed is shown in fig. 3D.
And S204, forming a passivation layer covering the reflecting electrode.
Specifically, the passivation layer is mainly used for preventing external impurities from entering the epitaxial wafer, and the material of the passivation layer can be SiO2Or Si3N4The passivation layer may be formed by deposition. Illustratively, the semiconductor epitaxial wafer structure forming the passivation layer 16 is shown in fig. 3E.
S205, etching the passivation layer to form a bonding hole exposing a part of the reflection electrode.
Specifically, the semiconductor device is usually combined with a driving substrate to form a display module, the driving substrate supplies power to the semiconductor device, quantum dots in the semiconductor device emit light with corresponding colors after being electrified, and the bonding holes are the connection places of the display module and the driving substrate. The bonding holes can be formed by means of photoetching and plasma etching. Illustratively, the structure of the semiconductor epitaxial wafer in which the bonding holes 17 are formed is shown in fig. 3E.
And S206, forming a protective film on the surface of the blue LED array after the bonding holes are formed.
Specifically, through the above steps S201 to S205, the semiconductor epitaxial wafer has been processed to form a semiconductor device having a blue LED array, and in order to avoid an influence on the blue LED array in the subsequent manufacturing steps, a protective film is formed on the surface of the blue LED array, where the protective film is made of a material that is easily torn off, such as a blue film, a photoresist, or an Ultraviolet (UV) film. Illustratively, the semiconductor device structure forming the protective film 18 is shown in fig. 3F.
And S207, polishing the substrate of the semiconductor device into a mirror surface.
Specifically, whether the thickness of the sapphire substrate meets the requirement is determined, and if the sapphire substrate is too thick, the sapphire substrate needs to be thinned so as to improve the heat dissipation performance of the device. Then, the sapphire substrate with the thickness meeting the requirement is polished into a mirror surface, so that the surface of the sapphire substrate is brighter and smoother, a surface damage layer formed by damaging the sapphire substrate in the preceding working procedure is removed, residual stress is eliminated, and the semiconductor device is prevented from being bent and deformed or cracked in the subsequent working procedure.
And S208, forming a first transparent layer on the surface of the substrate of the semiconductor device.
Specifically, a first transparent layer capable of transmitting light is formed on the polished surface of the substrate by deposition, and the material of the first transparent layer can be SiO2、MgF2ITO, etc. Illustratively, the semiconductor device structure forming the first transparent layer 19 is shown in fig. 3G.
S209, etching the first transparent layer to form a first opening exposing the substrate.
Specifically, the steps of glue spreading, pre-baking, photoetching, developing, post-baking and the like are sequentially carried out on the semiconductor device, a first opening pattern is defined on the first transparent layer, then the first transparent layer at the position of the first opening pattern is etched in a plasma etching mode, and therefore a first opening for exposing the substrate is formed in the first transparent layer. Illustratively, the first opening 20 is configured as shown in FIG. 3G.
And S210, forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer.
Specifically, the first quantum dot is a quantum dot capable of emitting light of a color different from blue light, such as a red quantum dot or a green quantum dot. The first quantum dot layer can be formed on the surface of the substrate exposed by the first opening and the surface of the first transparent layer by spin coating or deposition. Illustratively, the first quantum dots are red quantum dots, and the semiconductor device forming the first quantum dot layer 21 is shown in fig. 3H.
S211, etching away the first quantum dot layer outside the first opening in a plasma etching mode to reserve the first quantum dot layer inside the first opening.
Specifically, the semiconductor device processed in the above steps may be placed in an ICP or RIE apparatus, and the first quantum dot layer outside the first opening is etched away by plasma etching, so that the first quantum dot layer inside the first opening is retained, and the printing of the first quantum dot inside the first opening is achieved. Illustratively, the semiconductor device after the plasma etch is complete is shown in FIG. 3I.
And S212, forming a second transparent layer on the surface of the first transparent layer and the surface of the first quantum dot layer.
S213, etching the second transparent layer to form a second opening exposing the substrate.
And S214, forming a second quantum dot layer on the surface of the substrate exposed by the second opening and the surface of the second transparent layer.
S215, etching away the second quantum dot layer outside the second opening by means of plasma etching so as to reserve the second quantum dot layer inside the second opening.
Specifically, the manufacturing methods of steps S212 to S215 are the same as the manufacturing methods of steps S208 to S2011, and only the positions of the quantum dots and the second openings are different, so detailed process procedures are not repeated herein, and reference may be made to the description of steps S208 to S2011. Illustratively, the second quantum dots are green quantum dots, and referring to fig. 3J, a second transparent layer 22 is formed on the first transparent layer 19 and the first quantum dot layer 21, the second transparent layer 22 is etched to form a second opening 23 exposing the surface of the substrate 10, and finally a second quantum dot layer 24 is formed inside the second opening 23 by deposition and plasma etching.
S216, forming a DBR film layer for filtering blue light on the surface of the second quantum dot layer and the surface of the second transparent layer.
Specifically, in order to prevent the blue light from transmitting through the first quantum dot layer and the second quantum dot layer, a DBR layer for filtering the blue light may be formed on the surface of the second quantum dot layer and the surface of the second transparent layer. Illustratively, the semiconductor device forming the DBR film layer 25 is shown in fig. 3K.
S217, etching the DBR film layer to form a light hole exposing a part of the second transparent layer.
Specifically, the DBR film layer formed in step S216 covers the entire light-transmitting surface of the semiconductor device, that is, the blue light array portion is also covered, so that the DBR film layer needs to be etched to form a light-transmitting hole for transmitting the blue light emitted by the blue light array. Illustratively, the semiconductor device in which the light-transmissive holes 26 are formed is shown in fig. 3K.
And S218, forming a transparent protective layer on the surface of the DBR film layer and the surface of the second transparent layer exposed by the light transmission hole.
Specifically, in order to prevent the internal structure of the semiconductor device from being damaged, a transparent protective layer is finally formed on the surface of the semiconductor device, which is provided with the DBR film layer, so that the semiconductor device has a protective effect and light transmittance. Illustratively, the semiconductor device forming the transparent protective layer 27 is shown in fig. 3L.
And S219, removing the protective film on the surface of the blue LED array to expose the bonding hole.
And S220, bonding the bonding hole with the bonding metal of the driving substrate.
Specifically, the protective film on the surface of the blue LED array is removed, and the bonding hole of the semiconductor device is bonded with the bonding metal of the driving substrate, so that the semiconductor device and the driving substrate are combined to form a display module, the driving substrate supplies power to the semiconductor device, the quantum dots in the semiconductor device can emit light with corresponding colors after being electrified, and one LED display screen is composed of a plurality of display modules. For example, after the bonding hole 17 is bonded to the bonding metal 29 on the driving substrate 28, the display module has a structure as shown in fig. 3M, and a top view of the display module is as shown in fig. 3N, as can be seen from fig. 3N, the first quantum dot layer 21 (red quantum dot) and the second quantum dot layer 24 (green quantum dot) are respectively disposed on the left and right sides of the display module, and the blue light layer 12 (blue QW) is disposed in the middle of the display module, so that full color is achieved.
According to the manufacturing method of the display module, provided by the embodiment of the invention, the printing of the quantum dots can be realized in a submicron size or even a nanometer size by using a plasma etching mode, and the printing precision of the quantum dots in the manufacturing method of the LED display screen is improved.
EXAMPLE III
Fig. 4 is a schematic structural diagram of a display screen according to a third embodiment of the present invention, where the display screen 400 according to the third embodiment of the present invention includes a plurality of display modules 410, and the display modules 410 are prepared by a method for manufacturing display modules according to any embodiment of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. A manufacturing method of a display module is characterized by comprising the following steps:
preprocessing a semiconductor epitaxial wafer to form a semiconductor device with a blue light LED array;
forming a first transparent layer on a substrate surface of the semiconductor device;
etching the first transparent layer to form a first opening exposing the substrate;
forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer;
etching away the first quantum dot layer outside the first opening by a plasma etching mode so as to reserve the first quantum dot layer inside the first opening;
forming a second transparent layer on the surface of the first transparent layer and the surface of the first quantum dot layer;
etching the second transparent layer to form a second opening exposing the substrate;
forming a second quantum dot layer on the surface of the substrate exposed by the second opening and the surface of the second transparent layer;
etching away the second quantum dot layer outside the second opening by means of plasma etching to retain the second quantum dot layer inside the second opening;
forming a DBR film layer for filtering blue light on the surface of the second quantum dot layer and the surface of the second transparent layer;
and etching the DBR film layer to form a light hole exposing part of the second transparent layer.
2. The method of claim 1, wherein the semiconductor epitaxial wafer comprises a first channel layer, a sapphire layer, and a second channel layer grown in sequence on a sapphire substrate.
3. The method of claim 2, wherein pre-processing the semiconductor epitaxial wafer to form a semiconductor device with a blue LED array comprises:
carrying out mesa etching on the semiconductor epitaxial wafer to expose part of the first channel layer so as to form a blue light LED array;
forming a current diffusion layer on the surface of the second channel layer of the blue light array;
forming a reflecting electrode on the surface of the current diffusion layer and the exposed surface of the first channel layer;
forming a passivation layer covering the reflective electrode;
etching the passivation layer to form a bonding hole exposing a portion of the reflective electrode;
and forming a protective film on the surface of the blue LED array after the bonding holes are formed.
4. The method of claim 3, further comprising, prior to forming the first transparent layer on the substrate surface of the semiconductor device:
and polishing the substrate of the semiconductor device into a mirror surface.
5. The method of claim 1, wherein forming the DBR film layer that filters blue light comprises:
and forming a transparent protective layer on the surface of the DBR film layer and the surface of the second transparent layer exposed by the light hole.
6. The method of claim 3, wherein after forming the DBR film layer that filters out blue light, further comprising:
removing the protective film on the surface of the blue LED array to expose the bonding holes;
and bonding the bonding hole with the bonding metal of the driving substrate.
7. The method of claim 1, wherein forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer comprises:
and forming a first quantum dot layer on the surface of the substrate exposed by the first opening and the surface of the first transparent layer by spin coating or deposition.
8. A display screen, which is characterized by comprising a plurality of display modules, wherein the display modules are prepared by the manufacturing method of the display module according to any one of claims 1 to 7.
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| CN113506844B (en) * | 2021-09-08 | 2022-03-15 | 深圳市思坦科技有限公司 | Micro LED chip preparation method, micro LED chip, display device and light-emitting device |
| CN113990999A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Micro display and manufacturing method thereof |
| CN113990998A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method thereof |
| CN114284417B (en) * | 2021-12-29 | 2024-04-30 | 深圳市思坦科技有限公司 | Color conversion substrate and preparation method thereof |
| CN114724470B (en) * | 2022-04-08 | 2023-07-14 | 深圳市思坦科技有限公司 | Micro LED chip array sheet and micro LED display module |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237075A (en) * | 2000-02-24 | 2001-08-31 | Matsushita Electric Ind Co Ltd | Thin film el element and manufacturing method of the same |
| WO2003092333A1 (en) * | 2002-04-24 | 2003-11-06 | Dai Nippon Printing Co., Ltd. | Method for fabricating organic el element |
| JP2009135183A (en) * | 2007-11-29 | 2009-06-18 | Konica Minolta Holdings Inc | Organic electroluminescence element, display, and lighting device |
| JP2010086846A (en) * | 2008-10-01 | 2010-04-15 | Canon Inc | Method for manufacturing organic el display device |
| CN102214650A (en) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) pixel unit device structure and preparation method thereof |
| CN103035852A (en) * | 2011-09-30 | 2013-04-10 | 佳能株式会社 | Method for manufacturing light emitting device |
| JP2015011904A (en) * | 2013-06-28 | 2015-01-19 | 国立大学法人九州大学 | Method for manufacturing patterned organic semiconductor compound-containing layer |
| CN105259694A (en) * | 2015-11-13 | 2016-01-20 | 深圳市华星光电技术有限公司 | Production method of color filter plate and color filter plate |
| CN108598105A (en) * | 2018-06-26 | 2018-09-28 | 矽照光电（厦门）有限公司 | A kind of active color display module production method of flexibility |
| CN110024484A (en) * | 2016-11-25 | 2019-07-16 | Lg电子株式会社 | Use the display device and its manufacturing method of light emitting semiconductor device |
| JP2019129163A (en) * | 2018-01-19 | 2019-08-01 | 株式会社クオルテック | El display panel and el display device, and method for manufacturing el display panel and device for manufacturing el display panel |
| CN209640519U (en) * | 2018-12-24 | 2019-11-15 | 张家港钛光新材料科技有限公司 | MicroLED coloured silk film and display panel based on perovskite quantum dot |
| CN111063708A (en) * | 2019-11-15 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5446056B2 (en) * | 2010-05-24 | 2014-03-19 | 株式会社村田製作所 | LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT MANUFACTURING METHOD, AND DISPLAY DEVICE |
| CN111257983A (en) * | 2018-12-03 | 2020-06-09 | 中华映管股份有限公司 | Color filter and manufacturing method thereof |
-
2020
- 2020-07-03 CN CN202010635705.6A patent/CN111883633B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237075A (en) * | 2000-02-24 | 2001-08-31 | Matsushita Electric Ind Co Ltd | Thin film el element and manufacturing method of the same |
| WO2003092333A1 (en) * | 2002-04-24 | 2003-11-06 | Dai Nippon Printing Co., Ltd. | Method for fabricating organic el element |
| JP2009135183A (en) * | 2007-11-29 | 2009-06-18 | Konica Minolta Holdings Inc | Organic electroluminescence element, display, and lighting device |
| JP2010086846A (en) * | 2008-10-01 | 2010-04-15 | Canon Inc | Method for manufacturing organic el display device |
| CN102214650A (en) * | 2011-05-25 | 2011-10-12 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) pixel unit device structure and preparation method thereof |
| CN103035852A (en) * | 2011-09-30 | 2013-04-10 | 佳能株式会社 | Method for manufacturing light emitting device |
| JP2015011904A (en) * | 2013-06-28 | 2015-01-19 | 国立大学法人九州大学 | Method for manufacturing patterned organic semiconductor compound-containing layer |
| CN105259694A (en) * | 2015-11-13 | 2016-01-20 | 深圳市华星光电技术有限公司 | Production method of color filter plate and color filter plate |
| CN110024484A (en) * | 2016-11-25 | 2019-07-16 | Lg电子株式会社 | Use the display device and its manufacturing method of light emitting semiconductor device |
| JP2019129163A (en) * | 2018-01-19 | 2019-08-01 | 株式会社クオルテック | El display panel and el display device, and method for manufacturing el display panel and device for manufacturing el display panel |
| CN108598105A (en) * | 2018-06-26 | 2018-09-28 | 矽照光电（厦门）有限公司 | A kind of active color display module production method of flexibility |
| CN209640519U (en) * | 2018-12-24 | 2019-11-15 | 张家港钛光新材料科技有限公司 | MicroLED coloured silk film and display panel based on perovskite quantum dot |
| CN111063708A (en) * | 2019-11-15 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate and preparation method thereof |
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|---|---|
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