CN111883432A - Preparation method of copper coarsening pin-free packaging lead frame - Google Patents
Preparation method of copper coarsening pin-free packaging lead frame Download PDFInfo
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- CN111883432A CN111883432A CN202010773005.3A CN202010773005A CN111883432A CN 111883432 A CN111883432 A CN 111883432A CN 202010773005 A CN202010773005 A CN 202010773005A CN 111883432 A CN111883432 A CN 111883432A
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- copper
- coarsening
- lead frame
- carrying
- cold rolling
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 28
- 239000010949 copper Substances 0.000 title claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000005097 cold rolling Methods 0.000 claims abstract description 31
- 238000007747 plating Methods 0.000 claims abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000009713 electroplating Methods 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 23
- 238000005237 degreasing agent Methods 0.000 claims description 15
- 239000013527 degreasing agent Substances 0.000 claims description 15
- 150000007524 organic acids Chemical class 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 10
- 230000032683 aging Effects 0.000 claims description 10
- 238000005238 degreasing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 5
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 5
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229960002635 potassium citrate Drugs 0.000 claims description 5
- 239000001508 potassium citrate Substances 0.000 claims description 5
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 5
- 235000011082 potassium citrates Nutrition 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000010791 quenching Methods 0.000 claims description 5
- 230000000171 quenching effect Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003929 acidic solution Substances 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000011002 quantification Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 238000007654 immersion Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4835—Cleaning, e.g. removing of solder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a preparation method of a copper coarsening pin-free packaging lead frame, and belongs to the technical field of microelectronic packaging materials. The method mainly realizes the preparation of the copper coarsening pin-free packaging lead frame through five steps of first acid washing, pre-plating copper coarsening, second acid washing, cold rolling processing and annealing treatment. The preparation method of the copper coarsening pin-free packaging lead frame has high reliability when being used for an integrated circuit chip, can realize quantification, can improve the surface coarsening effect of the lead frame, and has lower production cost and good stability in the production process. According to the invention, twice acid washing is carried out before and after pre-plated copper coarsening, so that the impurity removal rate can be maximized, and the packaging of the lead frame is promotedThe success rate enhances the bonding force of the lead frame and the package. The tensile strength of the invention is 626-630 MPa, the elongation is 20-23%, the conductivity is 178-182% IACS, the roughness is 0.092-0.097 μm, the thermal expansion coefficient is 17.2 multiplied by 10‑6～17.6×10‑6And k, the effect is obvious.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging materials, and particularly relates to a preparation method of a copper coarsening pin-free packaging lead frame.
Background
The lead frame is used as a chip carrier of an integrated circuit, is a key structural member for realizing the electrical connection between a lead-out end of an internal circuit of a chip and an external lead by means of a bonding material to form an electrical circuit, plays a role of a bridge connected with an external lead, needs to be used in most semiconductor integrated blocks, and is an important basic material in the electronic information industry.
The current common electroplating modes comprise full immersion plating, selective immersion plating, brush plating, local plating and the like, wherein the full immersion plating is suitable for carrying out overall electroplating, priming electroplating and functional layer full plating on the whole lead frame. The search of the existing documents shows that the Chinese patent publication No. CN103498175B, the patent application of 10 months and 28 days in 2015, discloses an electroplating method of a lead frame, and the electroplating of the lead frame is realized mainly by six steps of oil removal, soaking, acid cleaning and drying, nickel layer electroplating, palladium layer electroplating and gold layer electroplating. Although the present invention can firmly bond the plating layer and the base material sheet, the effect of roughening the surface of the lead frame cannot be improved, and the reliability of the present invention applied to an integrated circuit chip is low, and thus the present invention cannot be quantized.
Disclosure of Invention
The invention aims to provide a preparation method of a lead frame without pin for coarsening copper, which improves the effect of coarsening the surface of the lead frame, has high reliability when being used for an integrated circuit chip and can realize quantification.
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of a copper coarsening pin-free packaging lead frame comprises the following steps:
1) first acid washing: washing the thin plate material with impurities removed by using an acidic solution, and then carrying out micro-etching for 2-3 times by using a coarse liquid medicine, wherein the soaking time is 30-40 s each time;
2) pre-plating copper for coarsening: pre-plating by using an electroplating solution composed of 40-50 g/L copper sulfate, 4-6 g/L diethylenetriamine pentamethylene phosphonic acid, 8-10 g/L potassium citrate, 40-50 g/L silver ion source and 100-600 mg/L electroplating additive, and then pre-plating in an N plating solution2Melting the copper powder in a high-frequency furnace under the protective atmosphere, then adding 4.5-6.5 wt% of alumina powder into the copper powder alloy, fully mixing, ball-milling, and finally electroplating a layer of roughened copper layer on the surface of the copper alloy;
3) second acid washing: spraying the lead frame treated in the step 2) by using an organic acid roughening solution, then carrying out activated ultrapure countercurrent washing, then introducing the lead frame into an ultrasonic degreasing agent for ultrasonic degreasing, wherein the temperature of the ultrasonic degreasing agent is 40-45 ℃, the concentration of the ultrasonic degreasing agent is 62-65 g/L, and the ultrasonic degreasing time is 30-40S;
4) cold rolling: carrying out cold rolling processing with 70-75% reduction rate after removing oxide skin from the copper powder alloy treated in the step by milling;
5) annealing treatment: annealing the copper alloy obtained by cold rolling at 520-560 ℃ for 20-30 min, then carrying out cold rolling at 40-45% reduction rate again, then carrying out annealing at 530-535 ℃ for 8-10 min again, then carrying out cold rolling at 30-35% reduction rate to the required thickness, carrying out heat preservation for 30-40 min, then carrying out water quenching, and carrying out cold rolling aging treatment to obtain the finished product.
Further, the acidic solution in step 1) is one of sulfuric acid, nitric acid or sulfonic acid.
Further, the spraying pressure of the organic acid coarsening liquid is 0.3-0.5 MPa, the treatment temperature of the organic acid coarsening liquid is 42-45 ℃, and the spraying coarsening time is 2-4 min.
Further, the aging treatment temperature in the step 5) is 530-540 ℃, and the temperature rise time is 5-6 h.
Compared with the prior art, the invention has the beneficial effects that:
1) the preparation method of the copper coarsening pin-free packaging lead frame has high reliability when being used for an integrated circuit chip, can realize quantification, can improve the surface coarsening effect of the lead frame, and has lower production cost and good stability in the production process.
2) According to the invention, twice acid washing is carried out before and after pre-plated copper coarsening, so that the impurity removal rate can be maximized, the success rate of lead frame packaging is promoted, and the bonding force between the lead frame and the packaging is enhanced.
3) The preparation method of the packaging lead frame has the tensile strength of 626-630 MPa, the elongation of 20-23%, the electric conductivity of 178-182% IACS, the roughness of 0.092-0.097 μm,coefficient of thermal expansion of 17.2X 10-6～17.6×10-6And k, the effect is obvious.
Detailed Description
The following examples further describe in detail specific embodiments of the present invention. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1:
a preparation method of a copper coarsening pin-free packaging lead frame comprises the following steps:
1) first acid washing: washing away the thin plate material with impurities by using a sulfuric acid solution, and then carrying out micro-etching for 2 times by using a coarse liquid medicine, wherein the soaking time is 30s each time;
2) pre-plating copper for coarsening: pre-plating by using an electroplating solution consisting of 40g/L of copper sulfate, 4g/L of diethylenetriamine pentamethylene phosphonic acid, 8g/L of potassium citrate, 40g/L of silver ion source and 100mg/L of electroplating additive, and then pre-plating in N2Melting the copper powder in a high-frequency furnace under the protective atmosphere, then adding 4.5 wt% of alumina powder into the copper powder alloy, fully mixing, ball-milling, and finally electroplating a roughened copper layer on the surface of the copper alloy;
3) second acid washing: spraying the lead frame treated in the step 2) by using an organic acid coarsening solution, then carrying out activated ultrapure countercurrent washing, then introducing the lead frame into an ultrasonic degreasing agent for ultrasonic degreasing, wherein the temperature of the ultrasonic degreasing agent is 40 ℃, the concentration of the ultrasonic degreasing agent is 62g/L, and the ultrasonic degreasing time is 30 s; the spraying pressure of the organic acid coarsening solution is 0.3MPa, the treatment temperature of the organic acid coarsening solution is 42 ℃, and the spraying coarsening time is 2 min.
4) Cold rolling: carrying out cold rolling processing with 70% reduction rate after removing oxide skin from the copper powder alloy treated in the step by milling;
5) annealing treatment: annealing the copper alloy obtained by cold rolling for 20min at 520 ℃, then carrying out cold rolling with 40% reduction rate again, then carrying out annealing again for 8min at 530 ℃, then carrying out cold rolling with 30% reduction rate to the required thickness, carrying out water quenching after heat preservation for 30min, and carrying out cold rolling aging treatment to obtain the finished product. The aging treatment temperature is 530 ℃, and the temperature rise time is 5 h.
Example 2
A preparation method of a copper coarsening pin-free packaging lead frame comprises the following steps:
1) first acid washing: washing away the thin plate material with impurities by using a nitric acid solution, and then carrying out micro-etching for 2 times by using a coarse liquid medicine, wherein the soaking time is 35s each time;
2) pre-plating copper for coarsening: pre-plating by using electroplating solution consisting of 45g/L of copper sulfate, 5g/L of diethylenetriamine pentamethylene phosphonic acid, 9g/L of potassium citrate, 45g/L of silver ion source and 350mg/L of electroplating additive, and then pre-plating in N2Melting the copper powder in a high-frequency furnace under the protective atmosphere, then adding 5.5 wt% of alumina powder into the copper powder alloy, fully mixing, ball-milling, and finally electroplating a roughened copper layer on the surface of the copper alloy;
3) second acid washing: spraying the lead frame treated in the step 2) by using an organic acid coarsening solution, then carrying out activated ultrapure countercurrent washing, then introducing the lead frame into an ultrasonic degreasing agent for ultrasonic degreasing, wherein the temperature of the ultrasonic degreasing agent is 42 ℃, the concentration of the ultrasonic degreasing agent is 64g/L, and the ultrasonic degreasing time is 35 s; the spraying pressure of the organic acid coarsening solution is 0.4MPa, the treatment temperature of the organic acid coarsening solution is 44 ℃, and the spraying coarsening time is 3 min.
4) Cold rolling: carrying out cold rolling processing with 70-75% reduction rate after removing oxide skin from the copper powder alloy treated in the step by milling;
5) annealing treatment: annealing the copper alloy obtained by cold rolling at 540 ℃ for 25min, then carrying out cold rolling at 42% reduction rate again, then carrying out annealing at 532 ℃ for 9min, then carrying out cold rolling at 32% reduction rate to the required thickness, keeping the temperature for 35min, then carrying out water quenching, and carrying out cold rolling aging treatment to obtain the finished product. The aging treatment temperature is 535 ℃, and the temperature rise time is 5 h.
Example 3
A preparation method of a copper coarsening pin-free packaging lead frame comprises the following steps:
1) first acid washing: washing away the thin plate material with impurities by using a sulfonic acid solution, and then carrying out micro-etching for 3 times by using a coarse liquid medicine, wherein the soaking time is 40s each time;
2) pre-plating copper for coarsening: pre-plating by using electroplating solution consisting of 50g/L of copper sulfate, 6g/L of diethylenetriamine pentamethylene phosphonic acid, 10g/L of potassium citrate, 50g/L of silver ion source and 600mg/L of electroplating additive, and then pre-plating in N2Melting the copper powder in a high-frequency furnace under the protective atmosphere, then adding 6.5 wt% of alumina powder into the copper powder alloy, fully mixing, ball-milling, and finally electroplating a roughened copper layer on the surface of the copper alloy;
3) second acid washing: spraying the lead frame treated in the step 2) by using an organic acid coarsening solution, then carrying out activated ultrapure countercurrent washing, then introducing the lead frame into an ultrasonic degreasing agent for ultrasonic degreasing, wherein the temperature of the ultrasonic degreasing agent is 45 ℃, the concentration of the ultrasonic degreasing agent is 65g/L, and the ultrasonic degreasing time is 40 s; the spraying pressure of the organic acid coarsening solution is 0.5MPa, the treatment temperature of the organic acid coarsening solution is 45 ℃, and the spraying coarsening time is 4 min.
4) Cold rolling: carrying out cold rolling processing with 75% reduction rate after removing oxide skin from the copper powder alloy treated in the step by milling;
5) annealing treatment: annealing the copper alloy obtained by cold rolling for 30min at 560 ℃, then carrying out cold rolling with 45% reduction rate again, then carrying out annealing again for 10min at 535 ℃, then carrying out cold rolling with 35% reduction rate to the required thickness, keeping the temperature for 40min, then carrying out water quenching, and carrying out cold rolling aging treatment to obtain the finished product. The aging treatment temperature is 540 ℃, and the temperature rise time is 6 h.
Experimental example: the properties of the copper powder alloy according to the method of the present invention are shown in table 1:
as shown in Table 1, the tensile strength of the present invention is 626 to 630MPa, the elongation thereof is 20 to 23%, and the electrical conductivity thereof is178-182% IACS, roughness 0.092-0.097 μm, thermal expansion coefficient 17.2 × 10-6～17.6×10-6/k。
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (4)
1. A preparation method of a copper coarsening pin-free packaging lead frame is characterized by comprising the following steps:
1) first acid washing: washing the thin plate material with impurities removed by using an acidic solution, and then carrying out micro-etching for 2-3 times by using a coarse liquid medicine, wherein the soaking time is 30-40 s each time;
2) pre-plating copper for coarsening: pre-plating by using an electroplating solution composed of 40-50 g/L copper sulfate, 4-6 g/L diethylenetriamine pentamethylene phosphonic acid, 8-10 g/L potassium citrate, 40-50 g/L silver ion source and 100-600 mg/L electroplating additive, and then pre-plating in an N plating solution2Melting the copper powder in a high-frequency furnace under the protective atmosphere, then adding 4.5-6.5 wt% of alumina powder into the copper powder alloy, fully mixing, ball-milling, and finally electroplating a layer of roughened copper layer on the surface of the copper alloy;
3) second acid washing: spraying the lead frame treated in the step 2) by using an organic acid roughening solution, then carrying out activated ultrapure countercurrent washing, then introducing the lead frame into an ultrasonic degreasing agent for ultrasonic degreasing, wherein the temperature of the ultrasonic degreasing agent is 40-45 ℃, the concentration of the ultrasonic degreasing agent is 62-65 g/L, and the ultrasonic degreasing time is 30-40S;
4) cold rolling: carrying out cold rolling processing with 70-75% reduction rate after removing oxide skin from the copper powder alloy treated in the step by milling;
5) annealing treatment: annealing the copper alloy obtained by cold rolling at 520-560 ℃ for 20-30 min, then carrying out cold rolling at 40-45% reduction rate again, then carrying out annealing at 530-535 ℃ for 8-10 min again, then carrying out cold rolling at 30-35% reduction rate to the required thickness, carrying out heat preservation for 30-40 min, then carrying out water quenching, and carrying out cold rolling aging treatment to obtain the finished product.
2. The method as claimed in claim 1, wherein the acidic solution in step 1) is one of sulfuric acid, nitric acid and sulfonic acid.
3. The method for preparing the copper coarsening leadless packaging lead frame according to claim 1, characterized in that the spraying pressure of the organic acid coarsening solution is 0.3-0.5 MPa, the processing temperature of the organic acid coarsening solution is 42-45 ℃, and the spraying coarsening time is 2-4 min.
4. The method for preparing the copper coarsening leadless packaging lead frame according to claim 1, characterized in that the aging treatment temperature in the step 5) is 530-540 ℃, and the temperature rise time is 5-6 h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010773005.3A CN111883432A (en) | 2020-08-04 | 2020-08-04 | Preparation method of copper coarsening pin-free packaging lead frame |
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| CN202010773005.3A CN111883432A (en) | 2020-08-04 | 2020-08-04 | Preparation method of copper coarsening pin-free packaging lead frame |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563144A (en) * | 2020-12-24 | 2021-03-26 | 新恒汇电子股份有限公司 | Surface treatment process for lead frame |
| CN114752980A (en) * | 2022-04-13 | 2022-07-15 | 崇辉半导体有限公司 | Lead frame roughening process |
-
2020
- 2020-08-04 CN CN202010773005.3A patent/CN111883432A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563144A (en) * | 2020-12-24 | 2021-03-26 | 新恒汇电子股份有限公司 | Surface treatment process for lead frame |
| CN114752980A (en) * | 2022-04-13 | 2022-07-15 | 崇辉半导体有限公司 | Lead frame roughening process |
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