CN111880380A - Maskless exposure method based on digital microlens array and photoetching machine - Google Patents

Maskless exposure method based on digital microlens array and photoetching machine Download PDF

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Publication number
CN111880380A
CN111880380A CN202010635519.2A CN202010635519A CN111880380A CN 111880380 A CN111880380 A CN 111880380A CN 202010635519 A CN202010635519 A CN 202010635519A CN 111880380 A CN111880380 A CN 111880380A
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China
Prior art keywords
wafer
exposure
light source
exposed
pattern
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Withdrawn
Application number
CN202010635519.2A
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Chinese (zh)
Inventor
朱煜
杨开明
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Beijing U Precision Tech Co Ltd
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Beijing U Precision Tech Co Ltd
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Priority to CN202010635519.2A priority Critical patent/CN111880380A/en
Publication of CN111880380A publication Critical patent/CN111880380A/en
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention discloses a maskless exposure method based on a digital microlens array and a photoetching machine, wherein the maskless exposure method comprises the following steps: using a UV-LED light source as a photoetching light source, wherein an emergent light beam of the UV-LED light source irradiates on a micro-lens array to form a pattern to be exposed; mounting the wafer on a wafer workpiece table; and during exposure, the wafer workpiece table is controlled by the control system to perform stepping motion, so that the exposure of the whole wafer is completed, and the pattern to be exposed is transmitted to the wafer. The invention does not need the traditional mask plate, can realize an infinite exposure area and improves the exposure efficiency.

Description

Maskless exposure method based on digital microlens array and photoetching machine
Technical Field
The invention relates to the technical field of semiconductors, in particular to a photoetching machine and an exposure method thereof.
Background
Photolithography is a key technology in the field of semiconductor technology, and exposure is a key step in photolithography. As the demand for semiconductor manufacturing products is higher, the development demand for exposure is also higher. At present, a mask plate and the like are generally used for exposure, and an image is transferred onto the mask plate, but the mask increases the complexity of the system.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a maskless exposure method based on a digital microlens array, comprising:
using a UV-LED light source as a photoetching light source, wherein an emergent light beam of the UV-LED light source irradiates on a micro-lens array to form a pattern to be exposed;
mounting the wafer on a wafer workpiece table;
and during exposure, the wafer workpiece table is controlled by the control system to perform stepping motion, so that the exposure of the whole wafer is completed, and the pattern to be exposed is transmitted to the wafer.
Preferably, the wafer stage comprises: the wafer clamping device comprises an XY motion platform, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is installed on the XY motion platform, the Z-axis wafer chuck is used for being clamped on the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck.
Preferably, the step motion of the wafer stage is controlled by a control system to complete the exposure of the whole wafer, including:
dividing the surface of the wafer into a plurality of grid units in rectangular areas with the same size;
and moving the wafer workpiece platform according to a snake shape, sequentially exposing each grid unit according to the snake-shaped route, and transmitting the graph to be exposed.
Preferably, the step motion of the wafer stage is controlled by a control system to complete the exposure of the whole wafer, further comprising:
taking each grid unit as an exposure subarea;
forming a pattern to be exposed corresponding to each exposure subarea through the micro-lens array;
transferring the graph to be exposed corresponding to each exposure subarea to the wafer through exposure;
and splicing the patterns to be exposed corresponding to each exposure sub-area to form a complete pattern.
Preferably, the method further comprises the following steps: and adjusting the light intensity of the UV-LED light source through a control system to form a pattern to be exposed with set gray scale.
Preferably, the method further comprises the following steps:
detecting a vertical distance between the microlens array and a wafer plane;
and adjusting the position of the micro-lens array or the wafer plane according to the detected distance, so that the wafer plane is always positioned at the focal plane of the micro-lens array.
Another aspect of the present invention is to provide a maskless lithography machine based on a digital microlens array, comprising:
a light source, which adopts a UV-LED light source as a photoetching light source;
the micro lens array is used for focusing the emergent light beam of the UV-LED to form a pattern to be exposed;
the wafer workpiece table is used for mounting a wafer;
the control system is used for controlling the driving mechanism to drive the wafer workpiece table to move;
and forming a pattern to be exposed on the surface of the wafer by the emergent light beam of the UV-LED light source through the micro-lens array, and controlling the wafer workpiece stage to perform stepping motion during exposure to complete the exposure of the whole wafer.
Preferably, the control system is further configured to control the intensity of the UV-LED light source to form a pattern to be exposed with a set gray scale on the surface of the wafer.
Preferably, the wafer processing device further comprises a distance detection device for detecting the vertical distance between the micro lens array and the wafer plane.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the invention, the pattern to be exposed is formed by the light emitted by the UV-LED light source through the micro-lens array, so that the traditional mask is replaced, the maskless exposure method is simpler and more convenient, and the exposure efficiency is improved. And moreover, a shaping light path is replaced by the micro-lens array, so that the optical system is simple and efficient.
In addition, the UV-LED light source has the characteristics of high luminous efficiency, low energy consumption, long service life and the like, and preheating is not needed when the UV-LED light source is used, so that the UV-LED light source is a safe and environment-friendly novel green exposure method.
In addition, the invention can realize an infinite exposure area through the stepping movement of the wafer workpiece table.
Drawings
FIG. 1 is a schematic flow chart of a maskless exposure method based on a digital microlens array according to the present invention;
FIG. 2 is a schematic view of a UV-LED light source irradiating a microlens array to form an exposure field in the present invention;
FIG. 3 is a schematic diagram of a UV-LED light source and microlens array of the present invention;
fig. 4 is a schematic view of the step motion of the present invention.
Detailed Description
The embodiments of the present invention will be described below with reference to the accompanying drawings. Those of ordinary skill in the art will recognize that the described embodiments can be modified in various different ways, or combinations thereof, without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Furthermore, in the present description, the drawings are not to scale and like reference numerals refer to like parts.
Fig. 1 is a schematic flow chart of a maskless exposure method based on a digital microlens array according to the present invention, and as shown in fig. 1, the maskless exposure method based on a digital microlens array according to the present invention includes:
and S1, using the UV-LED light source 1 as a photoetching light source, wherein the emergent light beam of the UV-LED light source 1 irradiates on the micro-lens array 2 to form a pattern to be exposed, and the pattern to be exposed refers to a pre-designed integrated circuit design drawing and the like. The UV-LED light source 1 is an ultraviolet light emitting diode, the UV-LED light source 1 is used for replacing a complex light source collimation light path in an exposure system of a photoetching machine, and the UV-LED light source 1 has the characteristics of high luminous efficiency, low energy consumption, long service life and the like, and does not need to be preheated during use, so that the exposure method is more environment-friendly.
In addition, the micro lens array 2 is used for replacing a shaping light path, the pattern to be exposed is directly formed through the micro lens array 2, and a traditional mask is not needed, so that the optical system is simple and efficient.
S2, the wafer 3 is mounted on the wafer stage. The wafer 3 refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, the wafer 3 is coated with photoresist, pattern transfer can be realized through exposure, and a pattern to be exposed is fixed on the wafer 3 and can be used for manufacturing various circuit element structures.
And S3, controlling the wafer workpiece stage to perform stepping motion by the control system during exposure, completing the exposure of the whole wafer 3, and transmitting the pattern to be exposed to the wafer 3.
In the scanning exposure method, the alignment step of the mask and the wafer is not needed, the structure of an exposure system is simplified, and the exposure efficiency is improved. Moreover, the exposure of an infinite exposure area can be realized through the stepping movement of the wafer workpiece table.
In one embodiment of the invention, the wafer stage comprises: the wafer clamping device comprises an XY motion platform, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is installed on the XY motion platform, the Z-axis wafer chuck is used for being clamped on the periphery of a wafer 3, and the pneumatic cylinder is used for adsorbing the wafer 3 on the vacuum chuck. The XY motion table is used for moving in an XY plane and adjusting an X coordinate and a Y coordinate, and the Z-axis wafer chuck is provided with a high-resolution rotating shaft and can adjust the rotating angle of the wafer 3. The driving mechanism drives the XY motion table to move, and simultaneously drives the wafer 3 adsorbed on the XY motion table to move.
In the present invention, the specific configuration of the driving mechanism is not limited, the driving mechanism may be a driving servomotor, and the driving mechanism is not limited to a driving method for driving the XY-motion stage to move in the XY plane.
In the invention, the driving mechanism is controlled by a control system, and the control system can adopt a closed-loop control system. And the control system receives the light beam signal of the UV-LED light source 1 and controls the driving mechanism, thereby controlling the movement of the wafer workpiece table. And the control system can also control the opening and closing of the UV-LED light source 1 and the intensity of light.
In one embodiment, the step motion of the wafer stage is controlled by a control system to complete the exposure of the whole wafer, including: dividing the surface of the wafer 3 into a plurality of grid units in rectangular areas with the same size, wherein the size of each grid unit is specifically divided according to exposure requirements; and moving the wafer workpiece platform according to a snake shape, sequentially exposing each grid unit according to the snake-shaped route, and transmitting the graph to be exposed. Fig. 4 is a schematic diagram of the stepping movement in the present invention, as shown in fig. 4, nine grid units are respectively represented by 1 to 9, the arrow direction represents the direction of the stepping movement, and the nine grid units 1 to 9 are sequentially exposed in a serpentine path to realize the exposure of a large exposure area.
In one embodiment, the step motion of the wafer stage is controlled by a control system to complete the exposure of the whole wafer, further comprising:
taking each grid unit as an exposure subarea;
forming a pattern to be exposed corresponding to each exposure subarea through the micro-lens array;
transferring the graph to be exposed corresponding to each exposure subarea to the wafer through exposure;
and splicing the patterns to be exposed corresponding to each exposure sub-area to form a complete pattern.
The patterns to be exposed of each exposure sub-area are spliced, so that the method can be used for manufacturing large-area exposure patterns.
In one embodiment, the maskless exposure method further includes: and adjusting the light intensity of the UV-LED light source through a control system to form a pattern to be exposed with set gray scale. Wherein, the set gray scale can be set according to the actual requirement of the graph.
In one embodiment, the maskless exposure method further includes:
detecting a vertical distance between the microlens array and a wafer plane;
and adjusting the position of the micro-lens array or the wafer plane according to the detected distance, so that the wafer plane is always positioned at the focal plane of the micro-lens array.
By keeping the wafer plane at the focal plane of the micro lens array all the time, the pattern to be exposed can be completely fixed on the wafer.
The invention also provides a maskless lithography machine based on the digital microlens array, which comprises: the light source adopts a UV-LED light source 1; the micro lens array 2 is used for focusing the emergent light beam of the UV-LED to form a focused thin light beam; the wafer workpiece table is positioned below the micro-lens array 2 and used for mounting a wafer 3; and the control system is used for controlling the driving mechanism to drive the wafer workpiece stage to move, the emergent light beam of the UV-LED light source forms a pattern to be exposed on the surface of the wafer 3 through the micro-lens array 2, and the wafer workpiece stage is controlled to move in a stepping mode through the control system during exposure so as to complete exposure of the whole wafer 3 and transmit the pattern to be exposed to the wafer 3.
In one embodiment, the control system is further used for controlling the intensity of the UV-LED light source so as to form a pattern to be exposed with set gray scale on the surface of the wafer.
In one embodiment, the maskless lithography machine further comprises a distance detection device for detecting a perpendicular distance between the microlens array and the wafer plane. By detecting the vertical distance, the plane of the wafer is always positioned on the focal plane of the micro-lens array, and the wafer plane or the micro-lens array can be adjusted according to the detected distance.
The maskless photoetching machine does not comprise a mask, does not need to align a mask mark with a wafer mark, and has a simple system structure.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A maskless exposure method based on a digital microlens array, comprising:
using a UV-LED light source as a photoetching light source, wherein an emergent light beam of the UV-LED light source irradiates on a micro-lens array to form a pattern to be exposed;
mounting the wafer on a wafer workpiece table;
and during exposure, the wafer workpiece table is controlled by the control system to perform stepping motion, so that the exposure of the whole wafer is completed, and the pattern to be exposed is transmitted to the wafer.
2. The maskless exposure method of claim 1, wherein said wafer stage comprises: the wafer clamping device comprises an XY motion platform, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is installed on the XY motion platform, the Z-axis wafer chuck is used for being clamped on the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck.
3. The maskless exposure method of claim 1, wherein the step-by-step movement of said wafer stage is controlled by a control system to complete the exposure of the entire wafer, comprising:
dividing the surface of the wafer into a plurality of grid units in rectangular areas with the same size;
and moving the wafer workpiece platform according to a snake shape, sequentially exposing each grid unit according to the snake-shaped route, and transmitting the graph to be exposed.
4. The maskless exposure method of claim 3, wherein the wafer stage is controlled by a control system to perform stepping motions to complete exposure of the entire wafer, further comprising:
taking each grid unit as an exposure subarea;
forming a pattern to be exposed corresponding to each exposure subarea through the micro-lens array;
transferring the graph to be exposed corresponding to each exposure subarea to the wafer through exposure;
and splicing the patterns to be exposed corresponding to each exposure sub-area to form a complete pattern.
5. The maskless exposure method of claim 1, further comprising: and adjusting the light intensity of the UV-LED light source through a control system to form a pattern to be exposed with set gray scale.
6. The maskless exposure method of claim 1, further comprising:
detecting a vertical distance between the microlens array and a wafer plane;
and adjusting the position of the micro-lens array or the wafer plane according to the detected distance, so that the wafer plane is always positioned at the focal plane of the micro-lens array.
7. A maskless lithography machine based on a digital microlens array, comprising:
a light source, which adopts a UV-LED light source as a photoetching light source;
the micro lens array is used for focusing the emergent light beam of the UV-LED to form a pattern to be exposed;
the wafer workpiece table is used for mounting a wafer;
the control system is used for controlling the driving mechanism to drive the wafer workpiece table to move;
and forming a pattern to be exposed on the surface of the wafer by the emergent light beam of the UV-LED light source through the micro-lens array, and controlling the wafer workpiece stage to perform stepping motion during exposure to complete the exposure of the whole wafer.
8. The maskless lithography machine that is based on a digital microlens array of claim 7, wherein said control system is further used for controlling the intensity of said UV-LED light source to form a pattern to be exposed with a set gray scale on the wafer surface.
9. The maskless lithography machine that is based on a digital microlens array as set forth in claim 7, further comprising distance detection means for detecting a perpendicular distance between the microlens array and the wafer plane.
CN202010635519.2A 2020-07-03 2020-07-03 Maskless exposure method based on digital microlens array and photoetching machine Withdrawn CN111880380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010635519.2A CN111880380A (en) 2020-07-03 2020-07-03 Maskless exposure method based on digital microlens array and photoetching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010635519.2A CN111880380A (en) 2020-07-03 2020-07-03 Maskless exposure method based on digital microlens array and photoetching machine

Publications (1)

Publication Number Publication Date
CN111880380A true CN111880380A (en) 2020-11-03

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CN202010635519.2A Withdrawn CN111880380A (en) 2020-07-03 2020-07-03 Maskless exposure method based on digital microlens array and photoetching machine

Country Status (1)

Country Link
CN (1) CN111880380A (en)

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