CN111880130B - Space magnetic field vector sensor and manufacturing process method thereof - Google Patents
Space magnetic field vector sensor and manufacturing process method thereof Download PDFInfo
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- CN111880130B CN111880130B CN202010657902.8A CN202010657902A CN111880130B CN 111880130 B CN111880130 B CN 111880130B CN 202010657902 A CN202010657902 A CN 202010657902A CN 111880130 B CN111880130 B CN 111880130B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
Abstract
The invention discloses a space magnetic field vector sensor and a manufacturing process method thereof. The first magnetic sensitive structure consists of two pairs of differential structures consisting of a magnetic sensitive triode and a load resistor to form an x-axis magnetic sensitive unit and a y-axis magnetic sensitive unit, so that the component measurement of a magnetic field in an xy plane can be realized; the second magnetic sensitive structure is composed of a pair of differential structures consisting of a magnetic sensitive triode and a load resistor to form a z-axis magnetic sensitive unit, and the measurement of the magnetic field component in the z direction can be realized. The sensor manufacturing process method comprises the steps of preparing a first magnetic sensitive structure and a second magnetic sensitive structure, and embedding the second magnetic sensitive structure into the first magnetic sensitive structure. The method can realize the manufacture of the space magnetic field vector sensor chip and has the characteristics of good consistency of the magnetic sensitivity characteristics of all the magnetic sensitivity directions and the like.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a space magnetic field vector sensor, and particularly relates to a space magnetic field vector sensor with high magnetic sensitivity and high consistency and a manufacturing process method thereof, which can be used for accurately measuring a space magnetic field vector.
Background
The space magnetic field vector sensor is widely applied to the fields of automotive electronics, navigation equipment, instruments and meters, electronic compasses and the like. The magnetic field vector sensor is required to have the performances of high magnetic sensitivity, high consistency, low cross interference, low temperature coefficient, wide range and the like.
In the prior art, main sensitive components for magnetic field measurement include hall elements, magnetodiodes, magnetotriodes, Anisotropic Magnetoresistors (AMR), Giant Magnetoresistors (GMR), Tunneling Magnetoresistors (TMR), and the like, and each of the magnetic sensitive components has a specific magnetic sensitivity direction. In the practical application process, in order to meet the requirement of multi-directional magnetic field measurement, two or more magnetic sensitive components are combined to carry out space magnetic field detection, and the problems of poor magnetic sensitivity consistency, large magnetic sensitivity cross interference and the like exist due to large characteristic difference of different magnetic sensitive components. However, space magnetic field detection requires compatibility in all directions, and has high requirements for consistency, orthogonality, cross interference and the like of multi-directional measurement.
Therefore, it is necessary to design a space magnetic field vector sensor, so that the magnetic sensitivities in each magnetic sensitivity direction have good consistency, low cross interference, good orthogonality and the like when the space magnetic field is measured.
Disclosure of Invention
In order to overcome the above problems, the present inventors have conducted intensive studies to design a space magnetic field vector sensor, which uses the same magnetic sensor to detect magnetic field components in three directions in space, and specifically, a MEMS technology is used to arrange a first magnetic sensitive structure and a second magnetic sensitive structure in a sensor structure, where the middle of the first magnetic sensitive structure is a concave through hole, the bottom of the second magnetic sensitive structure is a groove structure, and the second magnetic sensitive structure is embedded into the first magnetic sensitive structure along the groove structure to form an embedded connection, so as to achieve the orthogonality of the magnetic sensitive directions and the coincidence of the magnetic sensitive centers of the two magnetic sensitive structures, and break through the bottlenecks of large cross interference and poor consistency of the magnetic sensitivity of the space magnetic field vector sensor, and poor orthogonality of the magnetic sensitive directions, thereby completing the present invention.
Specifically, the present invention aims to provide the following:
in a first aspect, a space magnetic field vector sensor is provided, where the sensor includes a first magnetic sensitive structure and a second magnetic sensitive structure, the second magnetic sensitive structure is disposed in the first magnetic sensitive structure, and the magnetic sensitive directions of the first magnetic sensitive structure and the second magnetic sensitive structure are orthogonal and the magnetic sensitive centers are coincident.
The magnetic sensitive devices of the first magnetic sensitive structure and the second magnetic sensitive structure are the same in type, and are preferably silicon magnetic sensitive triodes.
In a second aspect, a manufacturing process method of a space magnetic field vector sensor is provided, which is preferably used for preparing the space magnetic field vector sensor in the first aspect, wherein the method includes preparing a first magnetically sensitive structure and a second magnetically sensitive structure, and embedding the second magnetically sensitive structure into the first magnetically sensitive structure.
In a third aspect, a space magnetic field vector sensor prepared by the manufacturing process method of the second aspect is provided.
The invention has the advantages that:
(1) the space magnetic field vector sensor provided by the invention is respectively integrated with the same magnetic sensitive device to form three magnetic sensitive units, and the consistency of magnetic sensitive characteristics is good;
(2) according to the space magnetic field vector sensor provided by the invention, the second magnetic sensitive structure is embedded into the first magnetic sensitive structure, the magnetic sensitive directions of the magnetic sensitive units are orthogonal, the magnetic sensitive centers are superposed, and magnetic field components along the x axis, the y axis and the z axis can be measured simultaneously;
(3) the invention provides a manufacturing process method of a space magnetic field vector sensor based on an MEMS technology, which can realize chip process manufacturing and has small chip volume.
Drawings
Fig. 1 shows a basic block diagram of a space magnetic field vector sensor according to a preferred embodiment of the present invention;
FIG. 2-1 shows a schematic view of a first magnetically susceptible structure according to a preferred embodiment of the present invention; 2-2 show a schematic view of a second magnetically susceptible structure according to a preferred embodiment of the present invention; FIGS. 2-3 illustrate a three-dimensional perspective view of a second magnetically susceptible structure according to a preferred embodiment of the present invention;
FIG. 3 shows FIG. 1 along AA/A cross-sectional view of;
FIG. 4 shows an equivalent circuit diagram of a space magnetic field vector sensor according to a preferred embodiment of the present invention;
5-1 to 5-11 show a flow chart of a manufacturing process of the space magnetic field vector sensor according to the present invention;
FIG. 6 shows I of the first to sixth silicon magnetosensitive triodes SMST1 to SMST6 in example 1C-VCEA characteristic curve graph;
fig. 7 is a graph showing the magnetosensitive characteristics of the magnetosensitive triode in the x-axis direction in example 1;
FIG. 8 is a graph showing the magnetosensitive characteristics of the y-axis direction magnetosensitive triode in example 1;
fig. 9 is a graph showing the magnetosensitive characteristics of the magnetosensitive triode in the z-axis direction in example 1.
The reference numbers illustrate:
1-a first silicon wafer; 2-a second silicon wafer; 3-a silicon dioxide layer; 4-a collector region of a second silicon magnetosensitive triode; 5-a base region of a second silicon magnetosensitive triode; 6-an emission region of a second silicon magnetosensitive triode; a 7-Al electrode; 8-a spacer ring; 9-convex configuration; 10-a groove structure; 11-a common emission area; 101-an emission area; 102-collector load resistance; 103-base resistance; 104-collector region; 105-base region; 106-emitter region lead silicon trench; SMST 1-first silicon magnetosensitive triode; SMST 2-second silicon magnetosensitive triode; SMST 3-third silicon magnetosensitive triode; SMST 4-fourth silicon magnetosensitive triode; SMST 5-fifth silicon magnetosensitive triode; SMST 6-sixth silicon magnetosensitive triode; b1-the base of the first silicon magnetic sensitive triode; b2-the base of the second silicon magnetic sensitive triode; b3-the base of the third silicon magnetic sensitive triode; b4-the base of the fourth silicon magnetic sensitive triode; b5-the base of the fifth silicon magnetic sensitive triode; b6-the base of the sixth silicon magnetosensitive triode; c1-the collector of the first silicon magnetic sensitive triode; c2-the collector of the second silicon magnetic sensitive triode; c3-collector of third silicon magnetic sensitive triode; c4-collector of the fourth silicon magnetic sensitive triode; c5-collector of the fifth silicon magnetic sensitive triode; c6-collector of the sixth silicon magnetic sensitive triode; e5-the emitter of the fifth silicon magnetosensitive triode; e6-the emitter of the sixth silicon magnetosensitive triode; rL1-a first collector load resistance; rL2-a second collector load resistance; rL3-a third collector load resistance; rL4-a fourth collector load resistance; rL5-a fifth collector load resistance; rL6-a sixth collector load resistance; rb1-a first base resistance; rb2-a second base resistance; rb3-a third base resistance; rb4-a fourth base resistance; rb5-a fifth base resistance; rb6-a sixth base resistance; MSE1 — first magnetically susceptible cell; MSE2 — second magnetically sensitive element; MSE3 — third magnetically susceptible element; vx1-a first output voltage of the x-direction magnetically susceptible unit; vx2-a second output voltage of the x-direction magnetically susceptible unit; vy1-a first output voltage of the y-direction magnetically susceptible unit; vy2-a second output voltage of the y-direction magnetically susceptible unit; vz1-a z-direction magnetically susceptible cell first output voltage; vz2-a z-direction magnetically susceptible cell second output voltage; vDD-a power source; GND-ground; b isx-an x-axis directional magnetic field component; b isy-a y-axis direction magnetic field component; b isz-a z-axis direction magnetic field component.
Detailed Description
The invention is explained in more detail below with reference to the figures and examples. The features and advantages of the present invention will become more apparent from the description. In which, although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
In a first aspect of the present invention, a space magnetic field vector sensor is provided, as shown in fig. 1, the sensor comprising a first magnetically susceptible structure and a second magnetically susceptible structure.
The second magnetic sensitive structure is arranged in the first magnetic sensitive structure, the magnetic sensitive directions of the second magnetic sensitive structure and the first magnetic sensitive structure are orthogonal, and the magnetic sensitive centers are overlapped.
According to a preferred embodiment of the invention, the first magnetically susceptible structure is arranged to realize an x-axis magnetic field component BxAnd the y-axis magnetic field component ByMeasuring (2);
the second magnetically sensitive structure is used for realizing a z-axis magnetic field component BzThe measurement of (2).
In further onIn a preferred embodiment, the first magnetically sensitive structure and the second magnetically sensitive structure are both fabricated on an SOI wafer, and the SOI wafer comprises device silicon and an insulating layer (SiO)2) And substrate silicon.
The first magnetically sensitive structure and the second magnetically sensitive structure are both fabricated on the same SOI wafer, as shown in fig. 2-1-2-3.
In the invention, the device silicon of the SOI wafer is a first silicon wafer 1, and the substrate silicon is a second silicon wafer 2.
Preferably, the thickness of the first silicon wafer 1 is 20-40 μm, preferably 30 μm;
the thickness of the second silicon wafer 2 is 450-600 μm, preferably 500 μm.
The first silicon wafer is a <100> crystal orientation double-sided polished high-resistance p-type monocrystalline silicon wafer, and the resistivity of the first silicon wafer is preferably 1000 omega cm.
More preferably, a silicon dioxide layer 3 is further disposed between the first silicon wafer 1 and the second silicon wafer 2, and the thickness of the silicon dioxide layer is 300 to 1200nm, preferably 500 to 1000 nm.
According to a preferred embodiment of the present invention, as shown in fig. 2-1, the first magneto-sensitive structure comprises four integrated SOI silicon magneto-sensitive transistors, a first silicon magneto-sensitive transistor SMST1, a second silicon magneto-sensitive transistor SMST2, a third silicon magneto-sensitive transistor SMST3 and a fourth silicon magneto-sensitive transistor SMST4,
the first silicon magnetic sensing triode SMST1 and the third silicon magnetic sensing triode SMST3 which are sensitive to the x axis are arranged in the opposite magnetic sensing direction;
the second silicon magnetic sensitive triode SMST2 and the fourth silicon magnetic sensitive triode SMST4 which are sensitive to the y axis are arranged in opposite magnetic sensitive directions.
Preferably, the four silicon magnetosensitive triodes are orthogonal according to the magnetosensitive direction, have superposed magnetosensitive centers, and are arranged at the edge of the first magnetosensitive structure chip, wherein the middle of the chip is used as a second magnetosensitive structure embedding area.
In a further preferred embodiment, four collector and base regions of the integrated SOI silicon magnetosensitive triode are formed on the upper surface of the first silicon wafer 1, and four emitter regions of the integrated SOI silicon magnetosensitive triode are formed on the lower surface of the first silicon wafer 1.
Wherein, the collector region 4, the base region 5 and the emitter region 6 of the second silicon magnetic sensitive triode are shown in figure 3.
Preferably, metal Al layers are deposited on the emitter region, the collector region and the base region to form Al electrodes 7, which are the emitter, the collector and the base of the silicon magnetosensitive triode, respectively.
As shown in fig. 1 and fig. 2-1, four bases of the first magnetic sensing structure are a base B1 of the first silicon magnetic sensing triode, a base B2 of the second silicon magnetic sensing triode, a base B3 of the third silicon magnetic sensing triode, and a base B4 of the fourth silicon magnetic sensing triode, respectively;
the four collectors of the first magnetic sensitive structure are respectively a collector C1 of a first silicon magnetic sensitive triode, a collector C2 of a second silicon magnetic sensitive triode, a collector C3 of a third silicon magnetic sensitive triode and a collector C4 of a fourth silicon magnetic sensitive triode;
the four emitting electrodes of the first magnetic sensitive structure are respectively an emitting electrode of a first silicon magnetic sensitive triode, an emitting electrode of a second silicon magnetic sensitive triode, an emitting electrode of a third silicon magnetic sensitive triode and an emitting electrode of a fourth silicon magnetic sensitive triode.
According to a preferred embodiment of the present invention, as shown in fig. 2-1 and 3, a collector load resistor is formed on the upper surface of the first silicon wafer 1 and on one side of the collector region;
a base resistor is manufactured on the upper surface of the first silicon chip 1 and one side of the base region;
preferably, the collector load resistors of the four integrated SOI silicon magnetosensitive triodes are first collector load resistors R respectivelyL1A second collector load resistor RL2A third collector load resistor RL3And a fourth collector load resistor RL4；
The base resistors of the four integrated SOI silicon magnetosensitive triodes are respectively first base resistors Rb1A second base resistor Rb2A third base resistor Rb3And a fourth base resistor Rb4。
In a further preferred embodiment, the four collector load resistors are all n-The type of the doped silicon nitride is doped,
the four base resistors are all n-And (4) carrying out type doping.
In a further preferred embodiment, the four collector load resistors have a resistance value of 1.5 to 4.0k Ω;
the resistance values of the four base resistors are 1.0-3.0 k omega.
In a preferred embodiment of the present invention, as shown in fig. 2-1, the collector C1 of the first silicon transistor and the first collector load resistor RL1Is connected to form a first output voltage V of the x-direction magnetically sensitive unit at the connectionx1；
Collector C3 of third silicon magnetic sensitive triode and third collector load resistor RL3Is connected to form a second output voltage V of the x-direction magnetic sensitive unit at the connectionx2；
Preferably, the first collector load resistance RL1The other end of (3), a third collector load resistance RL3The other ends of the two ends are connected with a power supply VDDAnd (4) connecting.
In a further preferred embodiment, the first base resistor Rb1One end of the first silicon magnetic sensitive triode is connected with a base B1 of the first silicon magnetic sensitive triode, and the other end of the first silicon magnetic sensitive triode is connected with a power supply VDDConnecting;
third base resistor Rb3One end of the first silicon magnetic sensitive triode is connected with a base B3 of a third silicon magnetic sensitive triode, and the other end of the first silicon magnetic sensitive triode is connected with a power supply VDDAnd (4) connecting.
The base electrode is connected with the base electrode resistor, and the base electrode current is modulated through the base electrode resistor, so that constant base electrode current can be provided for the silicon magnetic sensing triode.
In a further preferred embodiment, the first silicon magnetic sensing triode SMST1, the third silicon magnetic sensing triode SMST3 and the first collector load resistor R connected with the first silicon magnetic sensing triode SMST1 and the third silicon magnetic sensing triode SMST3 respectivelyL1A third collector load resistor RL3Forming a Wheatstone bridge equivalent structure to form a first magneto-sensitive unit MSE1 for the x-axis magnetic field component BxDetection of (3).
Preferably, the composite base region of the first silicon magnetosensitive triode SMST1 is centrosymmetric with the composite base region of the third silicon magnetosensitive triode SMST3, the composite base region is located between the base and the collector, and the symmetric center is a magnetic sensitive center.
The first silicon magnetosensitive triode and the third silicon magnetosensitive triode are arranged, so that the base region of the silicon magnetosensitive triode is in the range of detecting a magnetic field in the x-axis direction, and the sensitive section is small. Thus, when the magnetic field component along the x-axis direction is within the range of the long base region (composite base region), the magnetic field component B along the x-axis direction can be realizedxThe size of the magnetic sensitive surface is constant.
According to a preferred embodiment of the present invention, the collector C2 of the second silicon magnetic sensing triode and the second collector load resistor RL2Is connected to form a first output voltage V of the y-direction magneto-sensitive unit at the connectiony1；
Collector C4 of fourth silicon magnetic sensitive triode and fourth collector load resistor RL4Is connected to form a second output voltage V of the y-direction magnetic sensitive unit at the connectiony2；
Preferably, the second collector load resistance RL2The other end of (3), a fourth collector load resistance RL4The other ends of the two ends are connected with a power supply VDDAnd (4) connecting.
In a further preferred embodiment, the second base resistor Rb2One end of the first silicon magnetic sensitive triode is connected with a base B2 of the second silicon magnetic sensitive triode, and the other end of the first silicon magnetic sensitive triode is connected with a power supply VDDConnecting;
fourth base resistor Rb4One end of the second silicon magnetic sensitive triode is connected with a base B4 of the fourth silicon magnetic sensitive triode, and the other end of the second silicon magnetic sensitive triode is connected with a power supply VDDAnd (4) connecting.
In a further preferred embodiment, the second silicon magnetic sensing triode SMST2, the fourth silicon magnetic sensing triode SMST4 and the second collector load resistor R connected with the second silicon magnetic sensing triode SMST2 and the fourth silicon magnetic sensing triode SMST4 respectivelyL2A fourth collector load resistor RL4Forming a Wheatstone bridge equivalent structure to form a second magneto-sensitive unit MSE2 for the y-axis magnetic field component ByDetection of (3).
Preferably, the composite base region of the second silicon magnetosensitive triode SMST2 is centrosymmetric with the composite base region of the fourth silicon magnetosensitive triode SMST4, the composite base region is positioned between the base electrode and the collector, and the symmetric center is a magnetic sensitive center.
The second silicon magnetosensitive triode and the fourth silicon magnetosensitive triode are arranged, so that the base region of the silicon magnetosensitive triode is in the range of a y-axis detection magnetic field, and the sensitive section is small. Thus, when the magnetic field component along the y-axis is within the range of the long base region, the magnetic field component B along the y-axis can be realizedyThe size of the magnetic sensitive surface is constant.
In the invention, as shown in fig. 4, the emitter of the first silicon magnetic sensing triode and the emitter of the third silicon magnetic sensing triode are connected to form a common emitter and are grounded; and the emitter of the second silicon magnetic sensing triode and the emitter of the fourth silicon magnetic sensing triode are connected to form a common emitter and are grounded GND.
According to a preferred embodiment of the present invention, as shown in fig. 2-2, the second magnetically sensitive structure includes a fifth silicon transistor SMST5 and a sixth silicon transistor SMST6 disposed on the device silicon,
the fifth silicon magnetic sensing triode SMST5 and the sixth silicon magnetic sensing triode SMST6 which are sensitive to the z-axis direction are arranged in the opposite magnetic sensitive direction;
the fifth silicon magnetic sensing triode SMST5 and the sixth silicon magnetic sensing triode SMST6 which are sensitive to the z-axis direction are arranged in opposite magnetic sensitivity directions.
Preferably, the two silicon magnetosensitive triodes are orthogonal according to the magnetosensitive direction, have superposed magnetosensitive centers, and are arranged in the second magnetosensitive structure chip.
In a further preferred embodiment, collector regions and base regions of two integrated SOI silicon magnetosensitive triodes are manufactured on the upper surface of device silicon, and emitter regions of two integrated SOI silicon magnetosensitive triodes are manufactured on the lower surface of substrate silicon;
preferably, metal Al layers are evaporated on the emitter region, the collector region and the base region to form an emitter, a collector and a base respectively.
As shown in fig. 2-2 and 2-3, the two bases of the second magnetic sensing structure are a base B5 of a fifth silicon magnetic sensing triode and a base B6 of a sixth silicon magnetic sensing triode, respectively;
two collectors of the second magnetic sensitive structure are respectively a collector C5 of a fifth silicon magnetic sensitive triode and a collector C6 of a sixth silicon magnetic sensitive triode;
and the two emitting electrodes of the second magnetic sensitive structure are an emitting electrode E5 of a fifth silicon magnetic sensitive triode and an emitting electrode E6 of a sixth silicon magnetic sensitive triode respectively.
According to a preferred embodiment of the present invention, a fifth collector load resistor R is formed on the collector side of the fifth silicon phototransistor of the second magnetic sensitive structureL5A sixth collector load resistor R is arranged on one side of the collector region of the sixth silicon magnetosensitive triodeL6；
A fifth base resistor R is arranged on one side of the base region of the fifth silicon magnetosensitive triodeb5A sixth base resistor R is arranged on one side of the sixth silicon magnetosensitive triode base regionb6。
In a further preferred embodiment, the fifth collector load resistance and the sixth collector load resistance are both n-The type of the doped silicon nitride is doped,
the fifth base electrode resistor and the sixth base electrode resistor are both n-Type doping;
preferably, the resistance values of the fifth collector load resistor and the sixth collector load resistor are 1.5-4.0 k Ω;
the resistance values of the fifth base electrode resistor and the sixth base electrode resistor are 1.0-3.0 k omega.
In the invention, the structures and the manufacturing processes of the first to sixth silicon magnetosensitive triodes, the first to sixth collector load resistors and the first to sixth base resistors are all consistent.
Preferably, a separation ring 8 is adopted in the first magnetic sensitive structure and the second magnetic sensitive structure for device separation.
Wherein the isolation ring is arranged on the device layer and around each silicon magnetic sensitive triode to preventThe silicon-blocking magnetosensitive triode and other components are influenced mutually, and the isolating ring is preferably n+And (4) carrying out type doping.
Because the magnetic sensitivity direction of the magnetosensitive triode is parallel to the surface of the chip, when the space magnetic field is detected, a device (such as a Hall magnetic field sensor) with the magnetic sensitivity direction vertical to the surface of the chip is often adopted to detect the magnetic field in the z-axis direction, or some magnetic conduction structures are adopted to change the direction of the z-axis magnetic field for detection, however, the magnetic sensitivity consistency is poor due to different magnetic sensitive components adopted in different magnetic field directions, or the magnetic field is attenuated due to the magnetic conduction structures, so that the magnetic sensitivity is low, and the problems of large cross interference and the like exist.
In view of the above problems, the present inventors preferably use the same magnetic sensor to fabricate a first magnetic sensor structure and a second magnetic sensor structure, where the first magnetic sensor structure can measure the x-axis and y-axis magnetic field components parallel to the chip surface, and the second magnetic sensor structure can measure the magnetic field components parallel to the chip surface, and the two magnetic sensor structures have better magnetic sensitivity consistency.
According to a preferred embodiment of the invention, as shown in fig. 1 and 2-1, a concave through hole is provided in said first magnetically susceptible structure, and a convex structure 9 is provided on the inner wall of the through hole.
In a further preferred embodiment, as shown in fig. 2-3, the substrate silicon of the second magnetically susceptible structure is provided with a groove structure 10, which is in damascene connection with the convex structure 9, so that the second magnetically susceptible structure is effectively fixed with the first magnetically susceptible structure.
In the invention, in order to break through the difficulty of realizing the measurement of the magnetic field component in the z-axis direction by the second magnetic sensitive structure, the second magnetic sensitive structure is preferably vertically embedded in the first magnetic sensitive structure after being rotated by 90 degrees, and the bottleneck of poor orthogonality of the magnetic sensitive direction and low coincidence degree of the magnetic sensitive center is overcome by embedding the convex structure 9 in the first magnetic sensitive structure and the groove structure 10 in the second magnetic sensitive structure.
Preferably, the upper surface of the convex structure 9 is coplanar with the upper surface of the first silicon wafer 1, and the lower surface is coplanar with the lower surface of the second silicon wafer 2.
In the present invention, the upper surface of the first silicon wafer 1 is set as the upper side, and the lower surface of the second silicon wafer 2 is set as the lower side.
In a further preferred embodiment, the second magnetically susceptible structure is rotated 90 ° and perpendicular to the first magnetically susceptible structure, and the convex structure 9 and the groove structure 10 are embedded tightly without gap.
Preferably, the specific position of the second magnetic sensitive structure embedded in the first magnetic sensitive structure satisfies the magnetic sensitivity directions of the x direction, the y direction and the z direction are orthogonal.
More preferably, the magnetic susceptibility centers of the first and second magnetically susceptible structures coincide.
In the invention, because the magnetic sensitivity direction of the second magnetic sensitivity structure is orthogonal to the magnetic sensitivity direction of the first magnetic sensitivity structure, the fifth silicon magnetic sensitive triode SMST5 and the sixth silicon magnetic sensitive triode SMST6 can realize the z-axis magnetic field component BzThe measurement of (2).
Preferably, the composite base region of the fifth silicon magnetosensitive triode SMST5 is centrosymmetric with the composite base region of the sixth silicon magnetosensitive triode SMST6, the composite base region is located between the base and the collector, and the symmetric center is a magnetic sensitive center.
The fifth silicon magnetosensitive triode and the sixth silicon magnetosensitive triode are arranged, so that the base region of the silicon magnetosensitive triode is in the range of detecting a magnetic field in the z-axis direction, and the sensitive section is small. Thus, when the magnetic field component along the z-axis is within the range of the long base region, the magnetic field component B along the z-axis can be realizedzThe size of the magnetic sensitive surface is constant.
On the basis of the above, according to a preferred embodiment of the present invention, the collector C5 of the fifth silicon triode and the fifth collector load resistor RL5Is connected to form a first output voltage V of the z-direction magnetic sensitive unit at the connectionz1；
Collector C6 and sixth collector load resistor R of sixth silicon magnetic sensitive triodeL6Is connected to form a second output voltage V of the z-direction magnetic sensitive unit at the connectionz2。
Preferably, the firstFive collector load resistor RL5The other end of (3), a sixth collector load resistance RL6The other ends of the two ends are connected with a power supply VDDAnd (4) connecting.
In a further preferred embodiment, the fifth base resistor Rb5One end of the first silicon magnetic sensitive triode is connected with a base electrode B5 of a fifth silicon magnetic sensitive triode, and the other end of the first silicon magnetic sensitive triode is connected with a power supply VDDConnecting;
sixth base resistor Rb6One end of the first and second silicon magnetosensitive triodes is connected with a base B6 of a sixth silicon magnetosensitive triode, and the other end is connected with a power supply VDDAnd (4) connecting.
Preferably, the emitter of the fifth silicon magnetosensitive triode and the emitter of the sixth silicon magnetosensitive triode are connected to form a common emitter and are grounded GND.
Wherein the common emitter region 11 of the fifth and sixth silicon magnetosensitive transistor is shown in fig. 2-3.
In the invention, the fifth silicon magnetic sensing triode, the sixth silicon magnetic sensing triode and a fifth collector load resistor R respectively connected with the fifth silicon magnetic sensing triode and the sixth silicon magnetic sensing triodeL5And a sixth collector load resistor RL6Forming a Wheatstone bridge equivalent structure to form a third magneto-sensitive unit MSE3 for the z-axis direction magnetic field component BzDetection of (3).
According to the space magnetic field vector sensor provided by the invention, the magnetic sensitive triodes are used as magnetic sensitive devices for measuring the space magnetic field components, and the magnetic sensitive units in three directions are respectively formed, so that the magnetic field detection has better magnetic sensitivity consistency.
In a second aspect of the present invention, there is provided a manufacturing method of a space magnetic field vector sensor, preferably for manufacturing the space magnetic field vector sensor according to the first aspect, as shown in fig. 5-1 to 5-11, the method includes the following steps:
According to a preferred embodiment of the present invention, the first silicon wafer 1 is a <100> crystal orientation double-side polished high-resistance p-type single crystal silicon wafer, and preferably, the resistivity of the first silicon wafer is 1000 Ω · cm.
Preferably, the cleaning is performed on the monocrystalline silicon by using an RCA standard cleaning method.
And 2, cleaning the first silicon wafer, carrying out primary oxidation, and growing a silicon dioxide layer on the lower surface of the first silicon wafer to be used as an ion implantation buffer layer (as shown in figure 5-1).
Preferably, the thickness of the silicon dioxide layer grown on the lower surface of the first silicon wafer is 30-50 nm.
And 3, photoetching once, photoetching a window of an emission region of the magnetosensitive triode, and performing ion implantation to form a highly doped emission region 101 (as shown in figure 5-2).
Wherein n is formed by phosphorus implantation+Type doping with a doping concentration of 1E 18-1E 19cm-3。
And 4, secondary photoetching, carrying out double-sided photoetching on the first silicon wafer, and carrying out dry etching on the upper surface of the first silicon wafer to mark the plate.
And 5, cleaning the second silicon wafer 2, thermally growing a silicon dioxide layer on two sides, and bonding the upper surface of the second silicon wafer with the lower surface of the first silicon wafer (as shown in the figure 5-3).
Preferably, the thickness of the silicon dioxide layer grown on both sides is 500-1000 nm;
the thickness of the second silicon wafer 2 is 450-600 μm, preferably 500 μm.
And 6, carrying out three times of photoetching, wherein double-sided photoetching is carried out to transfer the upper surface mask mark of the first silicon wafer to the lower surface of the second silicon wafer.
And 7, thinning and polishing the upper surface of the first silicon wafer, cleaning the bonding sheet, and growing a silicon dioxide layer on the upper surface of the first silicon wafer to be used as an ion implantation buffer layer (as shown in figures 5-4).
According to a preferred embodiment of the present invention, the upper surface of the first silicon wafer is thinned to a thickness of 20 to 40 μm.
In a further preferred embodiment, the thickness of the silicon dioxide layer grown on the upper surface of the first silicon wafer after thinning is 30 to 50 nm.
And 8, carrying out four times of photoetching to form an isolation ring 8 on the upper surface of the first silicon wafer 1 (as shown in FIGS. 5-5).
And 9, performing five times of photoetching, and doping on the upper surface of the first silicon wafer to form a collector load resistor 102 and a base resistor 103 (shown in FIGS. 5-6).
Wherein n is formed by phosphorus implantation-Type-light doping, the doping concentration is 5E 14-5E 15cm-3。
And 10, six times of photoetching, doping on the upper surface of the first silicon wafer, and forming a collector region 104 (shown in figures 5-7).
Wherein n is formed by phosphorus implantation+Heavily doped, wherein the doping concentration is 1E 18-1E 19cm-3。
According to a preferred embodiment of the invention, a plasma etching process (ICP) is adopted to manufacture the base region etching groove, and the depth of the etching groove is 20-30 μm, preferably 25 μm.
In a further preferred embodiment, p is formed by boron implantation in the base etch recess+Heavily doped, wherein the doping concentration is 1E 18-1E 19cm-3。
In the invention, the base region is etched to form a three-dimensional structure, the hole injection capability of carriers in the base region of the magnetosensitive triode can be obviously improved under a certain bias condition, the holes are effectively compounded with electrons injected in the emitter region in the base region, and the number of the carriers collected by the collector region is obviously changed under the action of an external magnetic field, so that the current change of the collector of the magnetosensitive triode is obvious, the magnetosensitive effect of the magnetosensitive triode is effectively improved, and the magnetosensitive characteristic of the magnetosensitive triode is improved.
And step 12, carrying out rapid annealing treatment after ion implantation.
According to a preferred embodiment of the present invention, the rapid annealing treatment is performed in a vacuum environment at 800 to 1000 ℃ for 30 to 40 seconds to repair the lattice damage and activate the impurities.
And step 13, removing the silicon dioxide layer on the upper surface of the first silicon wafer, cleaning the SOI wafer, and growing the silicon dioxide layer on the upper surface of the first silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD).
Wherein the thickness of the grown silicon dioxide layer is 300-500 nm.
And step 14, performing eight times of photoetching, etching a lead hole on the upper surface of the first silicon wafer, and then performing vacuum evaporation on metal Al.
And step 15, performing nine times of photoetching, and etching the metal Al to form a metal Al interconnection line and a metal electrode (shown in figures 5-9).
And step 16, cleaning, growing a silicon dioxide layer on the upper surface of the first silicon wafer by PECVD, wherein the silicon dioxide layer is used as a passivation layer, and the thickness of the silicon dioxide layer is 500-800 nm.
And step 17, performing photoetching for ten times, and etching the passivation layer to form a chip pressure welding point.
And step 18, eleven times of photoetching, etching the lower surface of the second silicon wafer to the buried layer of the emitter region of the bonding surface in an ICP (inductively coupled plasma) mode, and forming an emitter region lead silicon groove 106 (shown in figures 5-10).
And step 19, cleaning the wafer, carrying out vacuum evaporation on metal Al on the back surface of the wafer to form a metal Al electrode 7, and carrying out an alloying process to form ohmic contact (as shown in figures 5-11).
The alloying process is carried out as follows: treating at 350-450 deg.c for 10-30 min, preferably 420 deg.c.
The first magnetically sensitive structure and the second magnetically sensitive structure are processed from the same SOI wafer.
Step 20, manufacturing a concave through hole in the middle of the first magnetic sensitive structure in the SOI wafer through a Bosch process, and etching a groove structure on the back substrate of the second magnetic sensitive structure;
and step 21, embedding the second magnetic sensitive structure into the first magnetic sensitive structure along the groove structure through micro-operation under a microscope, and fixing the position of the second magnetic sensitive structure in the first magnetic sensitive structure to realize the manufacture of the space magnetic field vector sensor chip.
In a third aspect of the invention, a space magnetic field vector sensor prepared by the manufacturing method of the second aspect is provided.
In the invention, the space magnetic field vector sensor prepared by the manufacturing process method of the first aspect and the space magnetic field vector sensor prepared by the manufacturing process method of the second aspect have high-consistency magnetic sensitivity in three directions of an x axis, a y axis and a z axis when a space magnetic field is measured.
Examples
Example 1
The space magnetic field vector sensor is integrally manufactured according to the following steps:
The first silicon wafer is a <100> crystal orientation double-sided polished high-resistance p-type monocrystalline silicon wafer, and the resistivity is preferably 1000 omega cm.
The cleaning is preferably carried out on the monocrystalline silicon by adopting an RCA standard cleaning method.
And 2, cleaning the first silicon wafer, carrying out primary oxidation, and growing a silicon dioxide layer on the lower surface of the first silicon wafer to be used as an ion implantation buffer layer.
And the thickness of the silicon dioxide layer grown on the lower surface of the first silicon wafer is 40 nm.
And 3, photoetching once, photoetching a window of an emission area of the magnetosensitive triode, and carrying out ion doping to form a high-doping emission area. By phosphorus implantation, n is formed+Type doping with the doping concentration of 1E18cm-3。
And 4, secondary photoetching, carrying out double-sided photoetching on the first silicon wafer, and carrying out dry etching on the upper surface of the first silicon wafer to mark the plate.
And 5, cleaning the second silicon wafer, thermally growing a silicon dioxide layer on two sides, and bonding the upper surface of the second silicon wafer with the lower surface of the first silicon wafer.
Wherein the thickness of the silicon dioxide layer grown on both sides is 800 nm; the thickness of the second silicon wafer was 500. mu.m.
And 6, carrying out three times of photoetching, wherein double-sided photoetching is carried out to transfer the upper surface mask mark of the first silicon wafer to the lower surface of the second silicon wafer.
And 7, thinning and polishing the upper surface of the first silicon wafer, cleaning the bonding sheet, and growing a silicon dioxide layer on the upper surface of the first silicon wafer to be used as an ion implantation buffer layer.
Wherein the upper surface of the first silicon chip is thinned to be 30 mu m in thickness; after thinning, the thickness of the silicon dioxide layer grown on the upper surface of the first silicon wafer is 40 nm.
And 8, photoetching for four times, and forming an isolation ring on the upper surface of the first silicon wafer.
And 9, performing five times of photoetching, doping on the upper surface of the first silicon wafer to form a collector load resistor and a base resistor, and forming n through phosphorus injection-Type of light doping, the doping concentration is 5E14cm-3。
And 11, etching a base region window on the upper surface of the first silicon wafer by seven times of photoetching, and doping to form a base region.
According to a preferred embodiment of the present invention, a plasma etching process (ICP) is used to fabricate the base etch trench structure, wherein the etch trench has a depth of 25 μm.
In a further preferred embodiment, p is formed by boron implantation in the base etch recess+Type heavily doped with 1E18cm-3。
And step 12, performing rapid annealing treatment after ion implantation, wherein according to a preferred embodiment of the invention, the rapid annealing treatment is vacuum treatment for 35s at 900 ℃ to repair crystal lattice damage and activate impurities.
And step 13, removing the silicon dioxide layer on the upper surface of the first silicon wafer, cleaning the SOI wafer, and growing a silicon dioxide layer on the upper surface of the first silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein the thickness of the grown silicon dioxide layer is 400 nm.
And step 14, performing eight times of photoetching, etching a lead hole on the upper surface of the first silicon wafer, and then performing vacuum evaporation on metal Al.
And step 15, carrying out nine times of photoetching, and etching the metal Al to form a metal Al interconnection line and a metal electrode.
And step 16, cleaning, and growing a silicon dioxide layer on the upper surface of the first silicon wafer by PECVD to be used as a passivation layer, wherein the thickness of the silicon dioxide layer is 650 nm.
And step 17, performing photoetching for ten times, and etching the passivation layer to form a chip pressure welding point.
And step 18, eleven times of photoetching is carried out, and ICP etching is carried out on the lower surface of the second silicon wafer to reach the buried layer of the emitter region of the bonding surface, so that a silicon groove of the lead of the emitter region is formed.
Step 19, cleaning the wafer, performing vacuum evaporation on metal Al on the back of the wafer to form a metal Al electrode 7, and performing an alloying process to form ohmic contact, wherein the alloying process is performed as follows: treating at 420 deg.C for 20 min.
Step 20, manufacturing a concave through hole in the middle of the first magnetic sensitive structure in the SOI wafer through a Bosch process, and etching a groove structure on the back substrate of the second magnetic sensitive structure;
and step 21, embedding the second magnetic sensitive structure into the first magnetic sensitive structure along the groove structure through micro-operation under a microscope, and fixing the position of the second magnetic sensitive structure in the first magnetic sensitive structure to realize the space magnetic field vector sensor.
Examples of the experiments
Adopting a magnetic field generation system of Beijing Cuihai Haicheng magnetoelectric technology Limited liability company, the working voltage is 5.0V at room temperature, and the base electrode is injected with a current IBThe results of characteristic tests of the space magnetic field vector sensor prepared in example 1 were shown in fig. 6 to 9, in the case of 0.0mA, 1.0mA, 2.0mA, 3.0mA, 4.0mA, and 5.0mA, respectively.
FIGS. 6 (a) to (f) show I's of the first to sixth silicon magnetotransistors SMST1 to SMST6, respectivelyC-VCEThe characteristics show that six silicon magnetosensitive triodes meet the requirement of a common triode IC-VCECharacteristic of, and IC-VCEThe characteristic curves are basically consistent, namely the silicon magnetosensitive triodes have better consistency.
The magnetosensitive characteristics (SMST1, SMST3 difference) of the magnetosensitive triode in the x-axis direction are shown in fig. 7, wherein (a) in fig. 7 shows the curves (V) of the output voltage with the variation of the applied magnetic field under different base currentsoutx-BxCharacteristic curve), it can be seen that the base current has a modulating effect on the output voltage;
FIG. 7 (b) shows the base current IBWhen the base current is constant, the output voltage is in positive correlation with the magnetic field.
The magnetosensitive characteristics (SMST2, SMST4 difference) of the y-axis magnetosensitive triode are shown in fig. 8, where (a) in fig. 8 shows the output voltage curve (V) with the variation of the applied magnetic field at different base currentsouty-ByCharacteristic curve), it can be seen that the base current has a modulating effect on the output voltage;
FIG. 8 (b) shows the base current IBWhen the base current is constant, the output voltage is in positive correlation with the magnetic field.
The magnetosensitive characteristics (SMST5, SMST6 difference) of the z-axis direction magnetosensitive triode are shown in fig. 9, where (a) in fig. 9 shows the output voltage curve (V) with the variation of the applied magnetic field under different base currentsoutz-BzCharacteristic curve), it can be seen that the base current has a modulating effect on the output voltage;
FIG. 9 (b) shows the base current IBWhen the base current is constant, the output voltage is in positive correlation with the magnetic field.
As can be seen from the above, when the power supply voltage was applied at 5.0V, the magnetic sensitivity of the space magnetic field vector sensor of example 1 was 199mV/T in the x-axis direction, 200mV/T in the y-axis direction, and 198mV/T in the z-axis direction.
Therefore, the space magnetic field vector sensor can realize the measurement of the space magnetic field, and has high consistency of magnetic sensitivity in three directions of an x axis, a y axis and a z axis.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", etc. indicate orientations or positional relationships based on an operation state of the present invention, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The present invention has been described above in connection with preferred embodiments, but these embodiments are merely exemplary and merely illustrative. On the basis of the above, the invention can be subjected to various substitutions and modifications, and the substitutions and the modifications are all within the protection scope of the invention.
Claims (3)
1. A space magnetic field vector sensor, characterized in that the sensor comprises a first magnetically sensitive structure and a second magnetically sensitive structure, the second magnetically sensitive structure being embedded in the first magnetically sensitive structure;
the first magnetic sensitive structure and the second magnetic sensitive structure are both manufactured on the SOI wafer, the magnetic sensitive directions of the first magnetic sensitive structure and the second magnetic sensitive structure are orthogonal, the magnetic sensitive centers are superposed,
the first magnetic sensitive structure comprises four silicon magnetic sensitive triodes arranged on an SOI wafer, wherein the four silicon magnetic sensitive triodes are respectively a first silicon magnetic sensitive triode, a second silicon magnetic sensitive triode, a third silicon magnetic sensitive triode and a fourth silicon magnetic sensitive triode,
the second magnetic sensitive structure comprises a fifth silicon magnetic sensitive triode and a sixth silicon magnetic sensitive triode which are arranged on the SOI wafer,
a concave through hole is arranged in the first magnetic sensitive structure, and a convex structure (9) is arranged on the inner wall of the through hole;
a groove structure (10) is arranged on the substrate silicon of the second magnetic sensitive structure and is connected with a convex structure (9) on the inner wall of the concave through hole of the first magnetic sensitive structure in an embedding manner, so that the second magnetic sensitive structure is fixed with the first magnetic sensitive structure;
in the SOI wafer, a concave through hole is manufactured in the middle of a first magnetic sensitive structure through a Bosch process, a groove structure is etched on a back substrate of a second magnetic sensitive structure,
embedding the second magnetically susceptible structure into the first magnetically susceptible structure along the groove structure by micro-manipulation under a microscope.
2. The sensor of claim 1,
the first silicon magnetosensitive triode and the third silicon magnetosensitive triode which are sensitive to the x-axis magnetic field component are arranged in opposite magnetic sensitivity directions;
and the second silicon magnetic sensitive triode and the fourth silicon magnetic sensitive triode which are sensitive to the y-axis magnetic field component are arranged in opposite magnetic sensitive directions.
3. The sensor of claim 1, wherein the fifth and sixth silicon magnetosensitive transistors are arranged in opposite magnetic sensitivity directions, and the magnetic sensitivity directions are parallel to the chip surface.
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