CN211263740U - Magnetic field/acceleration integrated sensor - Google Patents

Magnetic field/acceleration integrated sensor Download PDF

Info

Publication number
CN211263740U
CN211263740U CN201921572747.9U CN201921572747U CN211263740U CN 211263740 U CN211263740 U CN 211263740U CN 201921572747 U CN201921572747 U CN 201921572747U CN 211263740 U CN211263740 U CN 211263740U
Authority
CN
China
Prior art keywords
magnetic field
silicon
sensor
axis direction
shaped beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201921572747.9U
Other languages
Chinese (zh)
Inventor
赵晓锋
王颖
于志鹏
温殿忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heilongjiang University
Original Assignee
Heilongjiang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heilongjiang University filed Critical Heilongjiang University
Priority to CN201921572747.9U priority Critical patent/CN211263740U/en
Application granted granted Critical
Publication of CN211263740U publication Critical patent/CN211263740U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Pressure Sensors (AREA)

Abstract

本实用新型公开了一种磁场/加速度集成传感器,所述传感器包括设置在同一芯片上的磁场传感器和加速度传感器,磁场传感器磁敏感单元包括硅磁敏三极管和霍尔磁场传感器,其中,霍尔磁场传感器以原位掺杂纳米硅薄膜nc‑Si:H(n+)作为磁敏感层,加速度传感器敏感单元主要为原位掺杂的纳米多晶硅薄膜电阻,可实现对三维磁场和三轴加速度的同时测量。本实用新型基于微电子机械加工技术在SOI晶圆器件层上完成集成传感器芯片制作,并通过键合工艺和内引线压焊技术实现芯片封装,具有体积小、易于批量生产等特点。

Figure 201921572747

The utility model discloses a magnetic field/acceleration integrated sensor, the sensor comprises a magnetic field sensor and an acceleration sensor arranged on the same chip, the magnetic sensitive unit of the magnetic field sensor comprises a silicon magnetic triode and a Hall magnetic field sensor, wherein the Hall magnetic field The sensor uses in-situ doped nano-silicon thin film nc‑Si:H(n + ) as the magnetic sensitive layer, and the sensitive unit of the acceleration sensor is mainly in-situ doped nano-polysilicon thin film resistor, which can realize simultaneous detection of three-dimensional magnetic field and three-axis acceleration. Measurement. The utility model completes the fabrication of the integrated sensor chip on the SOI wafer device layer based on the microelectronic machining technology, and realizes the chip packaging through the bonding process and the inner lead pressure welding technology, and has the characteristics of small size and easy mass production.

Figure 201921572747

Description

一种磁场/加速度集成传感器A magnetic field/acceleration integrated sensor

技术领域technical field

本实用新型涉及传感器技术领域,具体涉及一种多物理量、多参量同时检测的单片集成传感器,尤其涉及一种磁场/加速度集成传感器。The utility model relates to the technical field of sensors, in particular to a single-chip integrated sensor for simultaneous detection of multiple physical quantities and multiple parameters, in particular to a magnetic field/acceleration integrated sensor.

背景技术Background technique

随着科学技术的迅速发展和应用需求,传感器技术倍受重视,现今已由单一的敏感单元发展为可同时测量多个物理量、多个方向的集成化传感器,并广泛应用于现代工业、汽车电子、航空航天、深海探测等领域。With the rapid development of science and technology and application requirements, sensor technology has received much attention. Today, it has developed from a single sensitive unit to an integrated sensor that can measure multiple physical quantities and directions at the same time, and is widely used in modern industry, automotive electronics , aerospace, deep-sea exploration and other fields.

通过分析空间三维磁场和三个方向加速度的测量原理,结果表明敏感单元在敏感机理、衬底材料导电类型选择、制作工艺方法等方面存在较大差异。目前,可用于集成化的磁场传感器主要包括霍尔磁场传感器、磁敏二极管、磁敏三极管、分裂漏场效应晶体管(MAGFET)等,结合影响磁场传感器磁敏特性的主要因素考虑,可集成化的磁场传感器优选单晶硅衬底为p 型导电类型;通过分析压阻式加速度传感器特性,优选单晶硅衬底为n型导电类型。现有技术中,在制作集成化芯片的过程中常存在不兼容的问题,使得三维磁场传感器和三轴加速度传感器难以集成。By analyzing the measurement principles of the three-dimensional magnetic field in space and acceleration in three directions, the results show that the sensitive elements have great differences in the sensitive mechanism, the selection of the conductivity type of the substrate material, and the fabrication process. At present, the magnetic field sensors that can be used for integration mainly include Hall magnetic field sensors, magneto-sensitive diodes, magneto-sensitive triodes, split-leakage field effect transistors (MAGFETs), etc. Considering the main factors affecting the magnetic sensitivity characteristics of magnetic field sensors, the integrated The magnetic field sensor preferably has a single-crystal silicon substrate of p-type conductivity; by analyzing the characteristics of the piezoresistive acceleration sensor, preferably the single-crystal silicon substrate is of n-type conductivity. In the prior art, there is often an incompatibility problem in the process of manufacturing an integrated chip, which makes it difficult to integrate a three-dimensional magnetic field sensor and a three-axis acceleration sensor.

因此,有必要提供一种单片集成磁场/加速度传感器,其能够实现三维磁场和三轴加速度的同时测量,且兼容性较好。Therefore, it is necessary to provide a monolithic integrated magnetic field/acceleration sensor, which can realize the simultaneous measurement of three-dimensional magnetic field and three-axis acceleration, and has good compatibility.

实用新型内容Utility model content

为了克服上述问题,本发明人进行了锐意研究,结果发现:在SOI晶圆(器件层p型高阻Si,电阻率ρ≥100Ω·cm)上制作单片集成磁场/加速度传感器,采用立体结构硅磁敏三极管和以掺磷纳米硅薄膜nc-Si:H(n+)作为磁敏感层的霍尔磁场传感器作为磁场传感器的敏感单元,利用掺硼纳米多晶硅薄膜电阻作为加速度传感器的敏感元件,可实现对三维磁场和三轴加速度的同时测量,从而完成了本实用新型。In order to overcome the above-mentioned problems, the inventors have carried out keen research and found that a monolithic integrated magnetic field/acceleration sensor is fabricated on an SOI wafer (device layer p-type high-resistance Si, resistivity ρ≥100Ω·cm), using a three-dimensional structure. Silicon magneto-sensitive triode and Hall magnetic field sensor with phosphorus-doped nano-silicon thin film nc-Si:H(n + ) as magnetic sensitive layer are used as sensitive unit of magnetic field sensor, and boron-doped nano-polysilicon thin film resistor is used as sensitive element of acceleration sensor, Simultaneous measurement of three-dimensional magnetic field and three-axis acceleration can be realized, thereby completing the utility model.

具体来说,本实用新型的目的在于提供一种磁场/加速度集成传感器,其中,所述传感器包括设置在同一芯片上的磁场传感器和加速度传感器,以实现三维磁场和三轴加速度的同时测量;Specifically, the purpose of the present utility model is to provide a magnetic field/acceleration integrated sensor, wherein the sensor includes a magnetic field sensor and an acceleration sensor arranged on the same chip, so as to realize the simultaneous measurement of three-dimensional magnetic field and three-axis acceleration;

所述磁场/加速度集成传感器以SOI片为衬底,所述SOI片包括器件层1、支撑硅2和第一二氧化硅层3;The magnetic field/acceleration integrated sensor takes an SOI sheet as a substrate, and the SOI sheet includes a device layer 1, a supporting silicon 2 and a first silicon dioxide layer 3;

其中,所述器件层1的厚度为20~50μm,支撑硅2的厚度为 420~550μm;Wherein, the thickness of the device layer 1 is 20-50 μm, and the thickness of the supporting silicon 2 is 420-550 μm;

所述磁场传感器包括设置在器件层1上的四个呈立体结构的硅磁敏三极管和一个霍尔磁场传感器H,The magnetic field sensor includes four silicon magneto-sensitive triodes with a three-dimensional structure and a Hall magnetic field sensor H, which are arranged on the device layer 1.

所述四个硅磁敏三极管两两结合,构成两个磁敏感单元,分别用于检测x轴方向和y轴方向的磁场;The four silicon magneto-sensitive triodes are combined in pairs to form two magneto-sensitive units, which are respectively used to detect the magnetic field in the x-axis direction and the y-axis direction;

所述霍尔磁场传感器H用于检测z轴方向的磁场;The Hall magnetic field sensor H is used to detect the magnetic field in the z-axis direction;

在所述加速度传感器的中间位置处刻蚀有悬空结构,所述悬空结构包括位于中心位置的质量块和位于质量块两侧的四个双L型梁;A suspended structure is etched at the middle position of the acceleration sensor, and the suspended structure includes a mass block at the center position and four double L-shaped beams located on both sides of the mass block;

所述质量块具有两个,分别为第一质量块m1和第二质量块 m2There are two mass blocks, which are respectively a first mass block m 1 and a second mass block m 2 ;

所述每个双L型梁均包括两个单L型梁,四个双L型梁共有八个单L型梁,分别为第一单L型梁L1,第二单L型梁L2,第三单L型梁L3,第四单L型梁L4,第五单L型梁L5,第六单L型梁L6,第七单L型梁L7和第八单L型梁L8Each of the double L-shaped beams includes two single L-shaped beams, and the four double L-shaped beams have a total of eight single L-shaped beams, which are the first single L-shaped beam L 1 and the second single L-shaped beam L 2 . , the third single L-shaped beam L 3 , the fourth single L-shaped beam L 4 , the fifth single L-shaped beam L 5 , the sixth single L-shaped beam L 6 , the seventh single L-shaped beam L 7 and the eighth single L-shaped beam L 6 Profile beam L 8 .

本实用新型所具有的有益效果包括:The beneficial effects of the present invention include:

(1)本实用新型所提供的磁场/加速度集成传感器,可以实现空间三维磁场和三轴加速度同时测量;(1) The magnetic field/acceleration integrated sensor provided by the utility model can realize the simultaneous measurement of three-dimensional magnetic field and three-axis acceleration in space;

(2)本实用新型所提供的磁场/加速度集成传感器,选择器件层为p型<100>晶向高阻单晶硅的SOI晶圆为衬底,磁场传感器磁敏感单元中的霍尔磁场传感器以原位掺杂纳米硅薄膜 nc-Si:H(n+)作为磁敏感层,加速度传感器敏感单元主要为原位掺杂的纳米多晶硅薄膜电阻,解决了两种不同物理量测量敏感单元衬底导电类型不同的难题;(2) For the magnetic field/acceleration integrated sensor provided by the present utility model, the SOI wafer whose device layer is p-type <100> crystal orientation high-resistance monocrystalline silicon is selected as the substrate, and the Hall magnetic field sensor in the magnetic sensitive unit of the magnetic field sensor is selected as the substrate. The in-situ doped nano-silicon thin film nc-Si:H(n + ) is used as the magnetic sensitive layer, and the sensitive unit of the acceleration sensor is mainly the in-situ doped nano-polysilicon thin film resistor, which solves the problem of two different physical quantity measurement sensitive unit substrate conduction. different types of puzzles;

(3)本实用新型所提供的磁场/加速度集成传感器的集成化工艺方法,基于MEMS技术和原位掺杂CVD方法实现磁场/ 加速度传感器芯片工艺制作,并通过键合工艺和内引线压焊技术实现芯片封装,具有体积小、易于批量生产等特点。(3) The integrated process method of the magnetic field/acceleration integrated sensor provided by the present utility model realizes the fabrication of the magnetic field/acceleration sensor chip based on the MEMS technology and the in-situ doping CVD method, and adopts the bonding process and the inner lead pressure welding technology. To achieve chip packaging, it has the characteristics of small size and easy mass production.

附图说明Description of drawings

图1示出本实用新型一种优选实施方式的磁场/加速度集成传感器的正面结构示意图;FIG. 1 shows a schematic view of the front structure of a magnetic field/acceleration integrated sensor according to a preferred embodiment of the present invention;

图2示出本实用新型一种优选实施方式的磁场/加速度集成传感器的背面结构示意图;FIG. 2 shows a schematic view of the back structure of a magnetic field/acceleration integrated sensor according to a preferred embodiment of the present invention;

图3示出本实用新型一种优选实施方式的磁场传感器的等效电路图;3 shows an equivalent circuit diagram of a magnetic field sensor according to a preferred embodiment of the present invention;

图4示出本实用新型一种优选实施方式的加速度传感器的等效电路图;FIG. 4 shows an equivalent circuit diagram of an acceleration sensor according to a preferred embodiment of the present invention;

图5-a~5-e示出本实用新型所述磁场/加速度集成传感器的集成化制作工艺流程图;5-a to 5-e show the integrated manufacturing process flow chart of the magnetic field/acceleration integrated sensor of the present invention;

图6-a~6-c示出本实用新型一种优选实施方式的磁场传感器沿x轴、y轴和z轴方向的实验特性曲线;Figures 6-a to 6-c show experimental characteristic curves of the magnetic field sensor along the x-axis, y-axis and z-axis directions of a preferred embodiment of the present invention;

图7示出本实用新型一种优选实施方式的加速度传感器的实验特性曲线。FIG. 7 shows the experimental characteristic curve of the acceleration sensor according to a preferred embodiment of the present invention.

附图标号说明:Description of reference numbers:

1-器件层;2-支撑硅;3-第一二氧化硅层;4-第二二氧化硅层;5-隔离槽;6-金属铝层;H-霍尔磁场传感器;SMST1-第一硅磁敏三极管;SMST2-第二硅磁敏三极管;SMST3-第三硅磁敏三极管;SMST4-第四硅磁敏三极管;B1-第一基极;B2-第二基极;B3-第三基极;B4-第四基极;C1-第一集电极;C2-第二集电极;C3-第三集电极;C4-第四集电极;E1-第一发射极;E2- 第二发射极;E3-第三发射极;E4-第四发射极;RL1-第一集电极负载电阻;RL2-第二集电极负载电阻;RL3-第三集电极负载电阻; RL4-第四集电极负载电阻;V1-x轴第一输出电压;V2-x轴第二输出电压;V3-y轴第一输出电压;V4-y轴第二输出电压;VDD-电源;GND-接地;IH1-第一控制电流极;IH2-第二控制电流极;VH1- 第一霍尔输出端;VH2-第二霍尔输出端;RH1-第一等效电阻; RH2-第二等效电阻;RH3-第三等效电阻;RH4-第四等效电阻;m1- 第一质量块;m2-第二质量块;L1-第一单L型梁;L2-第二单L型梁;L3-第三单L型梁;L4-第四单L型梁;L5-第五单L型梁;L6- 第六单L型梁;L7-第七单L型梁;L8-第八单L型梁;L9-第一中间梁;L10-第二中间梁;Rx1-x轴方向第一压敏电阻;Rx2-x轴方向第二压敏电阻;Rx3-x轴方向第三压敏电阻;Rx4-x轴方向第四压敏电阻;Ry1-y轴方向第一压敏电阻;Ry2-y轴方向第二压敏电阻;Ry3-y轴方向第三压敏电阻;Ry4-y轴方向第四压敏电阻;Rz1-z 轴方向第一压敏电阻;Rz2-z轴方向第二压敏电阻;Rz3-z轴方向第三压敏电阻;Rz4-z轴方向第四压敏电阻;Vxout1-x轴第一输出电压;Vxout2-x轴第二输出电压;Vyout1-y轴第一输出电压;Vyout2-y 轴第二输出电压;Vzout1-z轴第一输出电压;Vzout2-z轴第二输出电压;△R-芯片受外界加速度或磁场影响时电阻阻值的相对变化量。1-device layer; 2-support silicon; 3-first silicon dioxide layer; 4-second silicon dioxide layer; 5-isolation trench; 6-metal aluminum layer; H-Hall magnetic field sensor; SMST1-first silicon magneto-sensitive triode; SMST2-second silicon magneto-sensitive triode; SMST3-third silicon magneto-sensitive triode; SMST4-fourth silicon magneto-sensitive triode; B 1 -first base; B 2 - second base; B 3 - third base; B 4 - fourth base; C 1 - first collector; C 2 - second collector; C 3 - third collector; C 4 - fourth collector; An emitter; E 2 - the second emitter; E 3 - the third emitter; E 4 - the fourth emitter; R L1 - the first collector load resistance; R L2 - the second collector load resistance; R L3 - third collector load resistance; R L4 - fourth collector load resistance; V 1 - x-axis first output voltage; V 2 - x-axis second output voltage; V 3 - y-axis first output voltage; V 4 -y-axis second output voltage; V DD - power supply; GND - ground; I H1 - first control current pole; I H2 - second control current pole; V H1 - first Hall output terminal; V H2 - second Hall output terminal; R H1 - the first equivalent resistance; R H2 - the second equivalent resistance; R H3 - the third equivalent resistance; R H4 - the fourth equivalent resistance; m 1 - the first mass; m 2 - second mass; L 1 - first single L-beam; L 2 - second single L-beam; L 3 - third single L-beam; L 4 - fourth single L-beam; L 5 - Fifth single L-beam; L6 - sixth single L-beam; L7 - seventh single L-beam; L8 - eighth single L-beam; L9 - first intermediate beam; L10 - second Middle beam; R x1 - the first varistor in the x-axis direction; R x2 - the second varistor in the x-axis direction; R x3 - the third varistor in the x-axis direction; R x4 - the fourth varistor in the x-axis direction ; R y1 - the first varistor in the y-axis direction; R y2 - the second varistor in the y-axis direction; R y3 - the third varistor in the y-axis direction; R y4 - the fourth varistor in the y-axis direction; R z1 - the first varistor in the z-axis direction; R z2 - the second varistor in the z-axis direction; R z3 - the third varistor in the z-axis direction; R z4 - the fourth varistor in the z-axis direction; V xout1 - X-axis first output voltage; V xout2 -x-axis second output voltage; V yout1 -y-axis first output voltage; V yout2 -y-axis second output voltage; V zout1 -z-axis first output voltage; V zout2 - The second output voltage of the z-axis; △R- the relative change of the resistance value of the chip when the chip is affected by external acceleration or magnetic field.

具体实施方式Detailed ways

下面通过附图和实施方式对本实用新型进一步详细说明。通过这些说明,本实用新型的特点和优点将变得更为清楚明确。其中,尽管在附图中示出了实施方式的各种方面,但是除非特别指出,不必按比例绘制附图。The present utility model will be described in further detail below through the accompanying drawings and embodiments. Through these descriptions, the features and advantages of the present invention will become clearer. Therein, although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless otherwise indicated.

本实用新型提供了一种磁场/加速度集成传感器,如图1所示,所述传感器包括集成设置在同一芯片上的磁场传感器和加速度传感器,以实现三维磁场和三轴加速度的同时测量。The utility model provides a magnetic field/acceleration integrated sensor, as shown in FIG. 1 , the sensor includes a magnetic field sensor and an acceleration sensor integrated on the same chip to realize simultaneous measurement of three-dimensional magnetic field and three-axis acceleration.

根据本实用新型一种优选的实施方式,所述磁场/加速度集成传感器以SOI片为衬底,所述SOI片包括器件层1和支撑硅2。According to a preferred embodiment of the present invention, the magnetic field/acceleration integrated sensor uses an SOI sheet as a substrate, and the SOI sheet includes a device layer 1 and a supporting silicon 2 .

本发明人研究发现,相比于制作在传统硅片上,器件制作在SOI片上具有更小的寄生电容,能够提高器件的速度。The inventors of the present invention have found that, compared with those fabricated on traditional silicon wafers, devices fabricated on SOI wafers have smaller parasitic capacitances, which can improve the speed of the devices.

在进一步优选的实施方式中,所述器件层1为p型<100>晶向高阻单晶硅,所述器件层1的厚度为20~50μm,优选为 25~35μm。In a further preferred embodiment, the device layer 1 is p-type <100> crystal orientation high-resistance single crystal silicon, and the thickness of the device layer 1 is 20-50 μm, preferably 25-35 μm.

其中,所述器件层的电阻率ρ大于100Ω·cm。Wherein, the resistivity ρ of the device layer is greater than 100Ω·cm.

在更进一步优选的实施方式中,所述支撑硅2为p型<100> 晶向高阻单晶硅,其厚度为420~550μm,优选为450~525μm,更优选为475~500μm。In a further preferred embodiment, the supporting silicon 2 is p-type <100> crystal orientation high-resistance single crystal silicon, and its thickness is 420-550 μm, preferably 450-525 μm, and more preferably 475-500 μm.

优选地,在所述器件层1和支撑硅2之间设置有第一二氧化硅层3,所述第一二氧化硅层3的厚度为500nm~800nm。Preferably, a first silicon dioxide layer 3 is disposed between the device layer 1 and the supporting silicon 2 , and the thickness of the first silicon dioxide layer 3 is 500 nm˜800 nm.

本发明人研究发现,在进行单片集成三维磁场传感器和三轴加速度传感器的过程中,在器件层为p型<100>晶向高阻单晶硅的SOI片上制作单片集成磁场/加速度传感器,能够实现三维磁场和三轴加速度的同时测量。The inventor of the present invention has found that, in the process of monolithically integrating a three-dimensional magnetic field sensor and a three-axis acceleration sensor, a monolithic integrated magnetic field/acceleration sensor is fabricated on an SOI wafer whose device layer is p-type <100> crystal orientation high-resistance single-crystal silicon. , can realize the simultaneous measurement of three-dimensional magnetic field and three-axis acceleration.

更优选地,在所述器件层1的上表面设置有第二二氧化硅层 4,所述第二二氧化硅层4的厚度为400nm~600nm。More preferably, a second silicon dioxide layer 4 is provided on the upper surface of the device layer 1, and the thickness of the second silicon dioxide layer 4 is 400nm˜600nm.

根据本实用新型一种优选的实施方式,如图1所示,所述磁场传感器包括设置在器件层1上的四个呈立体结构的硅磁敏三极管和一个霍尔磁场传感器H,其中,According to a preferred embodiment of the present invention, as shown in FIG. 1 , the magnetic field sensor includes four silicon magneto-sensitive triodes in a three-dimensional structure and a Hall magnetic field sensor H, which are arranged on the device layer 1 , wherein,

所述四个硅磁敏三极管两两结合,构成两个磁敏感单元,分别用于检测x轴方向和y轴方向的磁场;The four silicon magneto-sensitive triodes are combined in pairs to form two magneto-sensitive units, which are respectively used to detect the magnetic field in the x-axis direction and the y-axis direction;

所述霍尔磁场传感器H用于检测z轴方向的磁场。The Hall magnetic field sensor H is used to detect the magnetic field in the z-axis direction.

在进一步优选的实施方式中,所述霍尔磁场传感器设置在磁场传感器的中心位置,所述四个硅磁敏三极管设置在磁场传感器的边缘位置。In a further preferred embodiment, the Hall magnetic field sensor is arranged at the center position of the magnetic field sensor, and the four silicon magneto-sensitive triodes are arranged at the edge position of the magnetic field sensor.

其中,以p型高阻单晶硅为器件层和衬底,有利于提高磁场传感器的灵敏度。Among them, p-type high-resistance single crystal silicon is used as the device layer and substrate, which is beneficial to improve the sensitivity of the magnetic field sensor.

在更进一步优选的实施方式中,所述四个硅磁敏三极管分别为第一硅磁敏三极管SMST1、第二硅磁敏三极管SMST2、第三硅磁敏三极管SMST3和第四硅磁敏三极管SMST4,In a further preferred embodiment, the four silicon magneto-sensitive triodes are respectively a first silicon magneto-sensitive triode SMST1, a second silicon magneto-sensitive triode SMST2, a third silicon magneto-sensitive triode SMST3 and a fourth silicon magneto-sensitive triode SMST4 ,

其中,所述第一硅磁敏三极管SMST1和第二硅磁敏三极管 SMST2在三维磁场传感器芯片中心两侧沿磁场传感器的x轴对称设置,Wherein, the first silicon magneto-sensitive triode SMST1 and the second silicon magneto-sensitive triode SMST2 are symmetrically arranged along the x-axis of the magnetic field sensor on both sides of the center of the three-dimensional magnetic field sensor chip,

所述第三硅磁敏三极管SMST3和第四硅磁敏三极管 SMST4在三维磁场传感器芯片中心两侧沿磁场传感器的y轴对称设置。The third silicon magneto-sensitive triode SMST3 and the fourth silicon magneto-sensitive triode SMST4 are symmetrically arranged along the y-axis of the magnetic field sensor on both sides of the center of the three-dimensional magnetic field sensor chip.

优选地,所述第一硅磁敏三极管SMST1和第二硅磁敏三极管SMST2按y轴相反磁敏感方向设置,所述第三硅磁敏三极管 SMST3和第四硅磁敏三极管SMST4按x轴相反磁敏感方向设置。Preferably, the first silicon magneto-sensitive triode SMST1 and the second silicon magneto-sensitive triode SMST2 are arranged in the opposite magnetic sensitivity directions of the y-axis, and the third silicon magneto-sensitive triode SMST3 and the fourth silicon magneto-sensitive triode SMST4 are opposite to the x-axis Magnetic sensitivity direction setting.

根据本实用新型一种优选的实施方式,在器件层1的上表面还制作有基区和集电区,在器件层1的下表面制作有发射区。According to a preferred embodiment of the present invention, a base region and a collector region are also formed on the upper surface of the device layer 1 , and an emission region is formed on the lower surface of the device layer 1 .

在进一步优选的实施方式中,在所述基区、集电区和发射区的表面蒸镀金属Al层6,分别形成硅磁敏三极管的基极、集电极和发射极。In a further preferred embodiment, a metal Al layer 6 is evaporated on the surfaces of the base region, the collector region and the emitter region to form the base, collector and emitter of the silicon magneto-transistor, respectively.

其中,如图1中所示,在器件层1上表面分别制作有第一硅磁敏三极管SMST1的第一基极B1和第一集电极C1,第二硅磁敏三极管SMST2的第二基极B2和第二集电极C2,第三硅磁敏三极管SMST3的第三基极B3和第三集电极C3,第四硅磁敏三极管SMST4的第四基极B4和第四集电极C4Wherein, as shown in FIG. 1 , a first base B 1 and a first collector C 1 of a first silicon magneto-sensitive triode SMST1 are respectively fabricated on the upper surface of the device layer 1 , and a second The base electrode B 2 and the second collector electrode C 2 , the third base electrode B 3 and the third collector electrode C 3 of the third silicon magneto-sensitive triode SMST3, the fourth base electrode B 4 and the third electrode of the fourth silicon magneto-sensitive triode SMST4 Four collectors C 4 .

如图2所示,在所述支撑硅2的下表面制作有第一硅磁敏三极管SMST1的第一发射极E1,第二硅磁敏三极管SMST2的第二发射极E2,第三硅磁敏三极管SMST3的第三发射极E3,第四硅磁敏三极管SMST4的第四发射极E4As shown in FIG. 2 , a first emitter E 1 of a first silicon magneto-sensitive triode SMST1 , a second emitter E 2 of a second silicon magneto-sensitive triode SMST2 , and a third silicon magneto-sensitive triode SMST2 are fabricated on the lower surface of the support silicon 2 . The third emitter E 3 of the magneto-sensitive triode SMST3 and the fourth emitter E 4 of the fourth silicon magneto-sensitive triode SMST4 .

在更进一步优选的实施方式中,在器件层1的上表面、硅磁敏三极管集电极的一侧制作有集电极负载电阻。In a further preferred embodiment, a collector load resistor is fabricated on the upper surface of the device layer 1 and on one side of the collector of the silicon magneto-transistor.

其中,如图1中所示,第一硅磁敏三极管SMST1的第一集电极C1一侧制作有第一集电极负载电阻RL1,第二硅磁敏三极管 SMST2的第二集电极C2一侧制作有第二集电极负载电阻RL2,第三硅磁敏三极管SMST3的第三集电极C3一侧制作有第三集电极负载电阻RL3,第四硅磁敏三极管SMST4的第四集电极C4一侧制作有第四集电极负载电阻RL4Wherein, as shown in FIG. 1 , a first collector load resistor R L1 is formed on the side of the first collector C 1 of the first silicon magneto-sensitive triode SMST1, and the second collector C 2 of the second silicon magneto-sensitive triode SMST2 A second collector load resistor R L2 is fabricated on one side, a third collector load resistor R L3 is fabricated on one side of the third collector C3 of the third silicon magneto-sensitive triode SMST3, and a fourth collector of the fourth silicon magneto-sensitive triode SMST4 is fabricated. A fourth collector load resistor R L4 is formed on one side of the collector C 4 .

优选地,所述四个集电极负载电阻均为n-型掺杂。Preferably, the four collector load resistors are all n - type doped.

根据本实用新型一种优选的实施方式,如图1和3所示,所述第一硅磁敏三极管SMST1的第一集电极C1的一端与第一集电极负载电阻RL1相连,在连接处形成x轴第一输出电压V1According to a preferred embodiment of the present invention, as shown in FIGS. 1 and 3 , one end of the first collector C1 of the first silicon magneto-sensitive triode SMST1 is connected to the first collector load resistor R L1 , and when the connection is made where the x-axis first output voltage V 1 is formed,

所述第二硅磁敏三极管SMST2的第二集电极C2的一端与第二集电极负载电阻RL2相连,在连接处形成x轴第二输出电压V2One end of the second collector C 2 of the second silicon magneto-sensitive triode SMST2 is connected to the second collector load resistor R L2 , and a second x-axis output voltage V 2 is formed at the connection.

在进一步优选的实施方式中,所述第一基极B1、第二基极 B2、第一集电极负载电阻RL1的另一端和第二集电极负载电阻 RL2的另一端共同连接电源VDDIn a further preferred embodiment, the first base B 1 , the second base B 2 , the other end of the first collector load resistor R L1 and the other end of the second collector load resistor R L2 are commonly connected to a power source VDD .

其中,第一硅磁敏三极管SMST1的发射极和第二硅磁敏三极管SMST2的发射极共同接地GND。Wherein, the emitter of the first silicon magneto-sensitive triode SMST1 and the emitter of the second silicon magneto-sensitive triode SMST2 are commonly grounded to GND.

在本实用新型中,两个硅磁敏三极管(SMST1和SMST2) 和分别相连的两个集电极负载电阻(RL1和RL2)构成了第一差分测试电路,用于检测x轴方向的磁场。In the present invention, two silicon magneto-sensitive triodes (SMST1 and SMST2) and two connected collector load resistors (R L1 and R L2 ) constitute a first differential test circuit for detecting the magnetic field in the x-axis direction .

根据本实用新型一种优选的实施方式,所述第三硅磁敏三极管SMST3的第三集电极C3的一端与第三集电极负载电阻RL3相连,在连接处形成y轴第一输出电压V3According to a preferred embodiment of the present invention, one end of the third collector C3 of the third silicon magneto-sensitive triode SMST3 is connected to the third collector load resistor RL3, and the first output voltage of the y-axis is formed at the connection. V3 ,

所述第四硅磁敏三极管SMST4的第四集电极C4的一端与第四集电极负载电阻RL4相连,在连接处形成y轴第二输出电压 V4One end of the fourth collector C4 of the fourth silicon magneto-sensitive triode SMST4 is connected to the fourth collector load resistor RL4, and the y-axis second output voltage V4 is formed at the connection.

在进一步优选的实施方式中,所述第三基极B3、第四基极 B4、第三集电极负载电阻RL3的另一端和第四集电极负载电阻 RL4的另一端共同连接电源VDDIn a further preferred embodiment, the third base electrode B 3 , the fourth base electrode B 4 , the other end of the third collector load resistor RL3 and the other end of the fourth collector load resistor RL4 are commonly connected to a power supply VDD .

其中,第三硅磁敏三极管SMST3的发射极和第四硅磁敏三极管SMST4的发射极共同连接接地GND。Wherein, the emitter of the third silicon magneto-sensitive triode SMST3 and the emitter of the fourth silicon magneto-sensitive triode SMST4 are commonly connected to the ground GND.

在本实用新型中,两个硅磁敏三极管(SMST3和SMST4) 和分别相连的两个集电极负载电阻(RL3和RL4)构成了第二差分测试电路,用于检测y轴方向的磁场。In the present invention, two silicon magneto-sensitive triodes (SMST3 and SMST4) and two collector load resistors (R L3 and R L4 ) connected respectively constitute a second differential test circuit, which is used to detect the magnetic field in the y-axis direction .

根据本实用新型一种优选的实施方式,所述霍尔磁场传感器H包括磁敏感层、两个控制电流极和两个霍尔输出端,其中,According to a preferred embodiment of the present invention, the Hall magnetic field sensor H includes a magnetic sensitive layer, two control current poles and two Hall output terminals, wherein,

所述两个控制电流极为第一控制电流极IH1和第二控制电流极IH2,所述两个霍尔输出端为第一霍尔输出端VH1和第二霍尔输出端VH2The two control current poles are the first control current pole I H1 and the second control current pole I H2 , and the two Hall output terminals are the first Hall output terminal V H1 and the second Hall output terminal V H2 .

在进一步优选的实施方式中,如图3所示,所述第一控制电流极IH1和第一霍尔输出端VH1之间等效为第一等效电阻RH1,第一控制电流极IH1和第二霍尔输出端VH2之间等效为第二等效电阻RH2,第二控制电流极IH2和第一霍尔输出端VH1之间等效为第三等效电阻RH3,第二控制电流极IH2和第二霍尔输出端VH2之间等效为第四等效电阻RH4In a further preferred embodiment, as shown in FIG. 3 , the space between the first control current electrode I H1 and the first Hall output terminal V H1 is equivalent to a first equivalent resistance R H1 , and the first control current electrode is equivalent to a first equivalent resistance R H1 . The distance between I H1 and the second Hall output terminal V H2 is equivalent to a second equivalent resistance R H2 , and the distance between the second control current pole I H2 and the first Hall output terminal V H1 is equivalent to a third equivalent resistance R H3 , between the second control current electrode I H2 and the second Hall output terminal V H2 is equivalent to a fourth equivalent resistance R H4 .

在更进一步优选的实施方式中,如图3所示,所述第一等效电阻RH1和第三等效电阻RH3相连,连接处形成z轴第一输出电压 Vz1,所述第二等效电阻RH2和第四等效电阻RH4相连,连接处形成z轴第二输出电压Vz2In a further preferred embodiment, as shown in FIG. 3 , the first equivalent resistance R H1 and the third equivalent resistance R H3 are connected, and the first z-axis output voltage V z1 is formed at the connection, and the second equivalent resistance R H1 is connected. The equivalent resistor R H2 is connected to the fourth equivalent resistor R H4 , and the second output voltage V z2 of the z-axis is formed at the connection.

在本实用新型中,四个等效电阻RH1、RH2、RH3和RH4形成惠斯通电桥结构,用于检测z轴方向的磁场。In the present invention, four equivalent resistors R H1 , R H2 , R H3 and R H4 form a Wheatstone bridge structure for detecting the magnetic field in the z-axis direction.

根据本实用新型一种优选的实施方式,所述霍尔磁场传感器的磁敏感层为掺磷纳米硅薄膜nc-Si:H(n+),所述磷的掺杂量为5E13-3~1E15cm-3According to a preferred embodiment of the present invention, the magnetic sensitive layer of the Hall magnetic field sensor is a phosphorus-doped nano-silicon film nc-Si:H(n + ), and the doping amount of phosphorus is 5E13 -3 - 1E15cm -3 .

在本实用新型中,所述掺磷纳米硅薄膜以原位掺杂的方式制作在器件层1的上表面,能够显著改善三维磁场传感器中霍尔磁场传感器的磁灵敏度特性,且能够保证x轴、y轴和z轴三个方向检测的一致性。In the present invention, the phosphorus-doped nano-silicon film is fabricated on the upper surface of the device layer 1 by in-situ doping, which can significantly improve the magnetic sensitivity characteristics of the Hall magnetic field sensor in the three-dimensional magnetic field sensor, and can ensure the x-axis The consistency of detection in three directions of , y-axis and z-axis.

其中,结合影响霍尔磁场传感器特性主要因素,当掺杂的磷过多时,会造成磁灵敏度降低影响,当掺杂的磷过少时,会造成输出阻抗过大影响。Among them, combined with the main factors affecting the characteristics of the Hall magnetic field sensor, when too much phosphorus is doped, the magnetic sensitivity will be reduced, and when too little phosphorus is doped, the output impedance will be too large.

在进一步优选的实施方式中,所述磁场传感器中霍尔磁场传感器磁敏感层的厚度为50nm~120nm。In a further preferred embodiment, the thickness of the magnetic sensitive layer of the Hall magnetic field sensor in the magnetic field sensor is 50 nm˜120 nm.

由于空间三维磁场的多方向性,需采用两种或多种磁敏感元器件结合使用,现有技术中采用硅磁敏三极管进行x轴和y轴方向磁场的测量,以保证x轴、y轴和z轴三个方向检测的一致性。Due to the multi-directionality of the three-dimensional magnetic field in space, two or more magnetic sensitive components need to be used in combination. The consistency of detection in three directions of the z-axis.

根据本实用新型一种优选的实施方式,在器件层1上、每个硅磁敏三极管周围制作有隔离槽5,以防止硅磁敏三极管与其他器件间的相互影响。According to a preferred embodiment of the present invention, an isolation groove 5 is formed on the device layer 1 around each silicon magneto-sensitive triode to prevent the mutual influence between the silicon magneto-sensitive triode and other devices.

在进一步优选的实施方式中,所述隔离槽5为n+型掺杂。In a further preferred embodiment, the isolation trench 5 is n + type doped.

本发明人研究发现,在器件层(<100>晶向高阻p型单晶硅) 上制作n+型掺杂的隔离槽,使得隔离槽里外均为P型,隔离槽与器件层的内外接触面形成PN结,由于PN结具有单向导电特性,因此,总会有一个接触面(内接触面或外接触面)不导通,这样,成功将每个硅磁敏三极管与其它器件进行隔离,防止了器件间的导通,避免了相互干扰,提高了传感器的稳定性。The inventors of the present invention have found out through research that an n + type doped isolation trench is fabricated on the device layer (<100> crystal orientation high-resistance p-type single crystal silicon), so that the inside and outside of the isolation trench are P-type, and the distance between the isolation trench and the device layer is The inner and outer contact surfaces form a PN junction. Since the PN junction has unidirectional conductivity, there will always be a contact surface (inner contact surface or outer contact surface) that is not conductive. Isolation prevents conduction between devices, avoids mutual interference, and improves the stability of the sensor.

根据本实用新型一种优选的实施方式,如图1所示,在所述加速度传感器的中间位置处刻蚀有悬空结构,所述悬空结构包括位于中心位置的质量块和位于质量块两侧的四个双L型梁;According to a preferred embodiment of the present invention, as shown in FIG. 1 , a suspended structure is etched at the middle position of the acceleration sensor, and the suspended structure includes a mass block at the center position and a mass block located on both sides of the mass block. Four double L-beams;

其中,所述质量块具有两个,分别为第一质量块m1和第二质量块m2Wherein, there are two mass blocks, which are a first mass block m 1 and a second mass block m 2 ;

所述每个双L型梁均包括两个单L型梁,四个双L型梁共有八个单L型梁,分别为第一单L型梁L1,第二单L型梁L2,第三单L型梁L3,第四单L型梁L4,第五单L型梁L5,第六单L型梁L6,第七单L型梁L7和第八单L型梁L8Each of the double L-shaped beams includes two single L-shaped beams, and the four double L-shaped beams have a total of eight single L-shaped beams, which are the first single L-shaped beam L 1 and the second single L-shaped beam L 2 . , the third single L-shaped beam L 3 , the fourth single L-shaped beam L 4 , the fifth single L-shaped beam L 5 , the sixth single L-shaped beam L 6 , the seventh single L-shaped beam L 7 and the eighth single L-shaped beam L 6 Profile beam L 8 .

优选地,所述第一单L型梁L1,第二单L型梁L2,第五单L 型梁L5和第七单L型梁L7设置在x轴或y轴方向中心线的一侧,且均与x轴或y轴方向中心线平行;Preferably, the first single L-shaped beam L 1 , the second single L-shaped beam L 2 , the fifth single L-shaped beam L 5 and the seventh single L-shaped beam L 7 are arranged on the center line of the x-axis or y-axis direction one side of , and both are parallel to the center line in the x-axis or y-axis direction;

所述第三单L型梁L3,第四单L型梁L4,第六单L型梁L6和第八单L型梁L8设置在x轴或y轴方向中心线的另一侧,且均与x 轴或y轴方向中心线平行。The third single L-shaped beam L 3 , the fourth single L-shaped beam L 4 , the sixth single L-shaped beam L 6 and the eighth single L-shaped beam L 8 are arranged on the other side of the center line in the x-axis or y-axis direction. side, and both are parallel to the center line in the x-axis or y-axis direction.

在本实用新型中,将每个双L型梁设置为两个单L型梁相连,形成八个单L型梁结构,可以明显提高x轴方向和y轴方向的灵敏度,使x轴方向、y轴方向的灵敏度接近z轴方向的灵敏度,促进各方向的敏感特性趋于一致。In the present invention, each double L-shaped beam is set as two single L-shaped beams connected to form eight single L-shaped beam structures, which can obviously improve the sensitivity in the x-axis direction and the y-axis direction, so that the x-axis direction, The sensitivity in the y-axis direction is close to the sensitivity in the z-axis direction, which promotes the convergence of the sensitivity characteristics in all directions.

在进一步优选的实施方式中,在第一质量块m1和第二质量块m2之间还设置有第一中间梁L9和第二中间梁L10In a further preferred embodiment, a first intermediate beam L 9 and a second intermediate beam L 10 are further arranged between the first mass m 1 and the second mass m 2 ;

优选地,所述第一质量块m1和第二质量块m2在加速度传感器的中心沿x轴方向或y轴方向对称设置,Preferably, the first mass m 1 and the second mass m 2 are symmetrically arranged along the x-axis direction or the y-axis direction at the center of the acceleration sensor,

所述第一中间梁L9和第二中间梁L10在加速度传感器的中心沿x轴方向或y轴方向对称设置,The first intermediate beam L9 and the second intermediate beam L10 are symmetrically arranged along the x-axis direction or the y-axis direction at the center of the acceleration sensor,

所述第一中间梁L9和第二中间梁L10均与第一质量块m1和第二质量块m2垂直设置。The first intermediate beam L 9 and the second intermediate beam L 10 are both perpendicular to the first mass m 1 and the second mass m 2 .

在更进一步优选的实施方式中,所述第一质量块m1和第二质量块m2的厚度均等于所述磁场/加速度集成传感器的最大厚度;In a further preferred embodiment, the thicknesses of the first mass m 1 and the second mass m 2 are both equal to the maximum thickness of the magnetic field/acceleration integrated sensor;

所述第一单L型梁L1至第八单L型梁L8、第一中间梁L9和第二中间梁L10的厚度均与器件层1的厚度相同。The thicknesses of the first single L-shaped beam L 1 to the eighth single L-shaped beam L 8 , the first intermediate beam L 9 and the second intermediate beam L 10 are all the same as the thickness of the device layer 1 .

在本实用新型中,所述质量块和传感器的厚度均为沿z轴方向的上下表面之间的距离。In the present invention, the thicknesses of the mass block and the sensor are the distances between the upper and lower surfaces along the z-axis direction.

根据本实用新型一种优选的实施方式,在所述第一质量块 m1与第一中间梁和第二中间梁相背的一侧,连接有第二单L型梁L2,第四单L型梁L4,第七单L型梁L7和第八单L型梁L8According to a preferred embodiment of the present invention, on the side of the first mass m 1 opposite to the first intermediate beam and the second intermediate beam, a second single L-shaped beam L 2 is connected, and a fourth single L-shaped beam L 2 is connected. L-shaped beam L 4 , the seventh single L-shaped beam L 7 and the eighth single L-shaped beam L 8 ;

在所述第二质量块m2与第一中间梁和第二中间梁相背的一侧,连接有第一单L型梁L1,第三单L型梁L3,第五单L型梁 L5和第六单L型梁L6A first single L-shaped beam L 1 , a third single L-shaped beam L 3 , and a fifth single L-shaped beam are connected to the side of the second mass m 2 opposite to the first intermediate beam and the second intermediate beam Beam L 5 and sixth single L-beam L 6 .

上述L型梁、中间梁和质量块共同形成三轴加速度传感器的结构。The L-shaped beam, the middle beam and the mass block together form the structure of the three-axis acceleration sensor.

在进一步优选的实施方式中,在所述第一单L型梁L1,第二单L型梁L2,第三单L型梁L3和第四单L型梁L4的根部分别设置有x轴方向第一压敏电阻Rx1、x轴方向第二压敏电阻Rx2、x轴方向第三压敏电阻Rx3和x轴方向第四压敏电阻Rx4In a further preferred embodiment, the roots of the first single L-shaped beam L 1 , the second single L-shaped beam L 2 , the third single L-shaped beam L 3 and the fourth single L-shaped beam L 4 are respectively provided There are a first varistor R x1 in the x-axis direction, a second varistor R x2 in the x-axis direction, a third varistor R x3 in the x-axis direction, and a fourth varistor R x4 in the x-axis direction;

其中,所述x轴方向第一压敏电阻Rx1、x轴方向第二压敏电阻Rx2、x轴方向第三压敏电阻Rx3和x轴方向第四压敏电阻Rx4彼此平行设置。Wherein, the first varistor R x1 in the x-axis direction, the second varistor R x2 in the x-axis direction, the third varistor R x3 in the x-axis direction, and the fourth varistor R x4 in the x-axis direction are arranged parallel to each other .

在更进一步优选的实施方式中,如图1和图4所示,所述x 轴方向第一压敏电阻Rx1的一端和x轴方向第二压敏电阻Rx2的一端相连,连接处形成x轴第一输出电压Vxout1;所述x轴方向第三压敏电阻Rx3的一端和x轴方向第四压敏电阻Rx4的一端相连,连接处形成x轴第二输出电压Vxout2In a further preferred embodiment, as shown in FIG. 1 and FIG. 4 , one end of the first varistor R x1 in the x-axis direction is connected to one end of the second varistor R x2 in the x-axis direction, and the connection is formed The x-axis first output voltage Vxout1 ; one end of the third varistor Rx3 in the x -axis direction is connected to one end of the fourth varistor Rx4 in the x -axis direction, and the connection forms the x-axis second output voltage Vxout2 ;

优选地,所述x轴方向第一压敏电阻Rx1的另一端和x轴方向第四压敏电阻Rx4的另一端共同连接电源VDD,所述x轴方向第二压敏电阻Rx2的另一端和x轴方向第三压敏电阻Rx3的另一端共同接地(GND)。Preferably, the other end of the first varistor Rx1 in the x -axis direction and the other end of the fourth varistor Rx4 in the x-axis direction are commonly connected to the power supply V DD , and the second varistor Rx2 in the x -axis direction is connected to the power supply V DD . The other end of , and the other end of the third varistor R x3 in the x-axis direction are commonly grounded (GND).

其中,第一单L型梁L1、第二单L型梁L2、第三单L型梁L3和第四单L型梁L4根部的四个压敏电阻(Rx1、Rx2、Rx3、Rx4)形成第一个惠斯通电桥,用于检测x轴方向的加速度。在沿x轴方向加速度作用下,惠斯通电桥输出端Vxout1和Vxout2发生改变,可实现x轴加速度的检测。Among them, the four varistors ( R x1 , R x2 , R x 1 , R x 2 , R x3 , R x4 ) form the first Wheatstone bridge for detecting the acceleration in the x-axis direction. Under the action of acceleration along the x-axis direction, the output terminals V xout1 and V xout2 of the Wheatstone bridge change, which can realize the detection of the x-axis acceleration.

根据本实用新型一种优选的实施方式,在所述第五单L型梁L5,第六单L型梁L6,第七单L型梁L7和第八单L型梁L8的根部分别设置有y轴方向第一压敏电阻Ry1、y轴方向第二压敏电阻 Ry2、y轴方向第三压敏电阻Ry3和y轴方向第四压敏电阻Ry4According to a preferred embodiment of the present invention, in the fifth single L-shaped beam L 5 , the sixth single L-shaped beam L 6 , the seventh single L-shaped beam L 7 and the eighth single L-shaped beam L 8 The root is respectively provided with a first varistor R y1 in the y-axis direction, a second varistor R y2 in the y-axis direction, a third varistor R y3 in the y-axis direction, and a fourth varistor R y4 in the y-axis direction,

其中,所述y轴方向第一压敏电阻Ry1、y轴方向第二压敏电阻Ry2、y轴方向第三压敏电阻Ry3和y轴方向第四压敏电阻Ry4彼此平行设置。Wherein, the first varistor R y1 in the y-axis direction, the second varistor R y2 in the y-axis direction, the third varistor R y3 in the y-axis direction, and the fourth varistor R y4 in the y-axis direction are arranged in parallel with each other .

在进一步优选的实施方式中,所述y轴方向第一压敏电阻 Ry1的一端和y轴方向第二压敏电阻Ry2的一端相连,连接处形成y 轴第一输出电压Vyout1;y轴方向第三压敏电阻Ry3的一端和y轴方向第四压敏电阻Ry4的一端相连,连接处形成y轴第二输出电压 Vyout2In a further preferred embodiment, one end of the first varistor R y1 in the y-axis direction is connected to one end of the second varistor R y2 in the y-axis direction, and the connection forms the y-axis first output voltage V yout1 ; y One end of the third varistor R y3 in the axial direction is connected to one end of the fourth varistor R y4 in the y-axis direction, and the connection forms the second y-axis output voltage V yout2 .

在更进一步优选的实施方式中,y轴方向第一压敏电阻Ry1的另一端和y轴方向第四压敏电阻Ry4的另一端共同连接电源 VDD,y轴方向第二压敏电阻Ry2的另一端和y轴方向第三压敏电阻Ry3的另一端共同接地。In a further preferred embodiment, the other end of the first varistor R y1 in the y-axis direction and the other end of the fourth varistor R y4 in the y-axis direction are jointly connected to the power supply V DD , and the second varistor in the y-axis direction is connected to the power supply V DD . The other end of R y2 and the other end of the third varistor R y3 in the y-axis direction are commonly grounded.

其中,第五单L型梁L5、第六单L型梁L6、第七单L型梁L7和第八单L型梁L8根部的四个压敏电阻(Ry1、Ry2、Ry3、Ry4)形成第二个惠斯通电桥,用于检测y轴方向的加速度。在沿y轴方向加速度作用下,惠斯通电桥输出端Vyout1和Vyout2发生改变,可实现y轴加速度的检测。Among them, the fifth single L-shaped beam L 5 , the sixth single L-shaped beam L 6 , the seventh single L-shaped beam L 7 and the eighth single L-shaped beam L 8 are four varistors (R y1 , R y2 , R y3 , R y4 ) form the second Wheatstone bridge for detecting the acceleration in the y-axis direction. Under the action of acceleration along the y-axis direction, the output terminals V yout1 and V yout2 of the Wheatstone bridge change, which can realize the detection of the y-axis acceleration.

根据本实用新型一种优选的实施方式,在所述第一中间梁 L9与第一质量块m1和第二质量块m2连接处的根部,分别设置有 z轴方向第一压敏电阻Rz1和z轴方向第二压敏电阻Rz2According to a preferred embodiment of the present invention, at the root of the connection between the first intermediate beam L9 and the first mass m 1 and the second mass m 2 , first varistors in the z-axis direction are respectively provided R z1 and the second varistor R z2 in the z-axis direction;

在所述第二中间梁L10与第一质量块m1和第二质量块m2连接处的根部,分别设置有z轴方向第三压敏电阻Rz3和z轴方向第四压敏电阻Rz4 A third varistor R z3 in the z-axis direction and a fourth varistor in the z-axis direction are respectively arranged at the root of the second intermediate beam L10 where the first mass block m 1 and the second mass block m 2 are connected. R z4 ;

其中,所述z轴方向第一压敏电阻Rz1和z轴方向第二压敏电阻Rz2相互垂直设置,Wherein, the first varistor R z1 in the z-axis direction and the second varistor R z2 in the z-axis direction are arranged perpendicular to each other,

所述z轴方向第三压敏电阻Rz3和z轴方向第四压敏电阻Rz4相互垂直设置。The third varistor R z3 in the z-axis direction and the fourth varistor R z4 in the z-axis direction are arranged perpendicular to each other.

在进一步优选的实施方式中,所述z轴方向第一压敏电阻Rz1的一端和z轴方向第二压敏电阻Rz2的一端相连,连接处形成z 轴第一输出电压Vzout1;z轴方向第三压敏电阻Rz3的一端和z轴方向第四压敏电阻Rz4的一端相连,连接处形成z轴第二输出电压 Vzout2In a further preferred embodiment, one end of the first varistor R z1 in the z-axis direction is connected to one end of the second varistor R z2 in the z-axis direction, and the connection forms the first z-axis output voltage V zout1 ; z One end of the third varistor R z3 in the axial direction is connected to one end of the fourth varistor R z4 in the z-axis direction, and the connection forms the second z-axis output voltage V zout2 .

在更进一步优选的实施方式中,所述z轴方向第一压敏电阻 Rz1的另一端和z轴方向第四压敏电阻Rz4的另一端共同连接电源 VDD,z轴方向第二压敏电阻Rz2的另一端和z轴方向第三压敏电阻Rz3的另一端共同接地。In a further preferred embodiment, the other end of the first varistor R z1 in the z-axis direction and the other end of the fourth varistor R z4 in the z-axis direction are jointly connected to the power supply V DD , and the second voltage in the z-axis direction is connected to the power supply V DD . The other end of the varistor R z2 and the other end of the third varistor R z3 in the z-axis direction are commonly grounded.

其中,第一中间梁和第二中间梁根部的四个z轴方向压敏电阻(Rz1、Rz2、Rz3、Rz4)形成第三个惠斯通电桥,用于检测z 轴方向的加速度。在沿z轴方向加速度作用下,惠斯通电桥输出端Vzout1和Vzout2发生改变,可实现z轴加速度的检测。Among them, the four z-axis direction varistors (R z1 , R z2 , R z3 , R z4 ) at the root of the first intermediate beam and the second intermediate beam form a third Wheatstone bridge for detecting the z-axis direction acceleration. Under the action of acceleration along the z-axis, the output terminals V zout1 and V zout2 of the Wheatstone bridge change, which can realize the detection of the z-axis acceleration.

其中,图4中的△R表示芯片在受到外界加速度或磁场影响时电阻阻值的相对变化量。Among them, ΔR in Figure 4 represents the relative change of the resistance value of the chip when the chip is affected by an external acceleration or a magnetic field.

根据本实用新型一种优选的实施方式,所述x轴、y轴和z 轴方向的压敏电阻均为掺硼纳米多晶硅薄膜电阻,优选为p型掺硼纳米多晶硅薄膜电阻。According to a preferred embodiment of the present invention, the varistors in the x-axis, y-axis and z-axis directions are all boron-doped nano-polysilicon thin film resistors, preferably p-type boron-doped nano-polysilicon thin film resistors.

在本实用新型中,在将磁场传感器和加速度传感器集成制作时,采用p型<100>晶向高阻单晶硅的SOI晶圆为衬底,对于压阻式加速度传感器的灵敏度会产生一定影响,为解决兼容性问题,本实用新型中优选采用p型掺硼纳米多晶硅薄膜电阻作为加速度传感器的敏感元件,以保证加速度传感器的灵敏度。In the present invention, when the magnetic field sensor and the acceleration sensor are integrated and fabricated, the SOI wafer of p-type <100> crystal orientation high-resistance single-crystal silicon is used as the substrate, which will have a certain impact on the sensitivity of the piezoresistive acceleration sensor. , In order to solve the compatibility problem, the p-type boron-doped nano-polysilicon thin film resistor is preferably used as the sensitive element of the acceleration sensor in the present invention, so as to ensure the sensitivity of the acceleration sensor.

本发明人研究发现,掺硼纳米多晶硅薄膜具有比其他常规多晶硅薄膜更为优越的压阻特性,应变因子温度系数小,电阻温度系数小,能够实现高灵敏度、宽工作温度范围的压敏测试。从而能够保证加速度传感器在p型衬底上具有高灵敏度,实现单片集成传感器对三维磁场和三轴加速度的同时测量。The inventors have found that the boron-doped nano-polysilicon film has more superior piezoresistive properties than other conventional polysilicon films, has a small temperature coefficient of strain factor, and a small temperature coefficient of resistance, and can realize pressure-sensitive testing with high sensitivity and wide operating temperature range. Therefore, it can be ensured that the acceleration sensor has high sensitivity on the p-type substrate, and the single-chip integrated sensor can simultaneously measure the three-dimensional magnetic field and the three-axis acceleration.

在进一步优选的实施方式中,所述硼的掺杂量为 1E13-3~1E15cm-3In a further preferred embodiment, the doping amount of boron ranges from 1E13 -3 to 1E15 cm -3 .

本发明人研究发现,当硼的掺杂量过高时,形成重掺杂,导致压敏电阻电阻率较低,在外界加速度作用时,压阻系数降低,惠斯通电桥输出电压较低,影响压敏特性;当硼的掺杂量过低时,形成轻掺杂,导致压敏电阻电阻率较高,在外界加速度作用时,电阻阻值变化量不明显,惠斯通电桥输出电压较低,影响压敏特性。The inventors found that when the doping amount of boron is too high, heavy doping is formed, resulting in a low resistivity of the varistor. When the external acceleration acts, the piezoresistive coefficient decreases, and the output voltage of the Wheatstone bridge is low. Affect the varistor characteristics; when the doping amount of boron is too low, light doping is formed, resulting in a high resistivity of the varistor. When the external acceleration acts, the resistance change is not obvious, and the output voltage of the Wheatstone bridge is relatively high. low, affecting the pressure-sensitive characteristics.

在更进一步优选的实施方式中,所述纳米多晶硅薄膜的厚度为60~100nm。In a further preferred embodiment, the thickness of the nano-polysilicon thin film is 60-100 nm.

根据本实用新型一种优选的实施方式,在所述加速度传感器的下方还设置有玻璃片,其具有凹槽结构,与支撑硅2键合连接,使得加速度传感器的两个质量块能够在凹槽内自由移动。According to a preferred embodiment of the present invention, a glass sheet is further provided below the acceleration sensor, which has a groove structure and is bonded and connected with the support silicon 2, so that the two mass blocks of the acceleration sensor can be placed in the groove. move freely inside.

在进一步优选的实施方式中,所述玻璃片为硼硅玻璃片,其厚度为0.5~1mm。In a further preferred embodiment, the glass sheet is a borosilicate glass sheet with a thickness of 0.5-1 mm.

在本实用新型中,所述玻璃片的具有过载保护功能,其避免了对质量块进行减薄的复杂处理,使得加速度传感器中心位置的质量块可以在玻璃片的凹槽内自由移动。In the present invention, the glass sheet has an overload protection function, which avoids the complicated process of thinning the mass block, so that the mass block at the center of the acceleration sensor can move freely in the groove of the glass sheet.

本实用新型还提供了一种磁场/加速度集成传感器的集成化工艺方法,优选用于制备上述磁场/加速度集成传感器,如图 5-a~5-e所示,所述方法包括以下步骤:The present invention also provides an integrated process method for a magnetic field/acceleration integrated sensor, which is preferably used for preparing the above-mentioned magnetic field/acceleration integrated sensor, as shown in Figures 5-a to 5-e, the method includes the following steps:

步骤1,清洗SOI片(如图5-a所示),第零次光刻(作为光刻工艺对版标记),在器件层1上制作对版标记。Step 1, cleaning the SOI sheet (as shown in FIG. 5-a ), the 0th photolithography (as a registration mark in the lithography process), and making a registration mark on the device layer 1 .

其中,采用RCA标准清洗法对单晶硅衬底进行清洗,所述清洗如下进行:将SOI片用浓硫酸煮至冒白烟,冷却后用大量 15去离子水冲洗,再分别采用电子清洗液1号APM(SC-1)、电子清洗液2号HPM(SC-2),其中1号液的主要成分及体积配比为:氨水:双氧水:水=1:1:5(氨水的浓度为27%,双氧水的浓度为 30%),其中2号液的主要成分及体积配比为:盐酸:双氧水:水=1:1:5(盐酸的浓度为37%,双氧水的浓度为30%),各清洗两次,然后用大量去离子水冲洗,最后放入甩干机中甩干。Among them, the RCA standard cleaning method is used to clean the single crystal silicon substrate, and the cleaning is carried out as follows: the SOI sheet is boiled with concentrated sulfuric acid until white smoke is emitted, and after cooling, it is rinsed with a large amount of 15% deionized water, and then an electronic cleaning solution is used respectively. No. 1 APM (SC-1), electronic cleaning liquid No. 2 HPM (SC-2), the main components and volume ratio of No. 1 liquid are: ammonia water: hydrogen peroxide: water = 1:1:5 (the concentration of ammonia water is 27%, the concentration of hydrogen peroxide is 30%), and the main components and volume ratio of No. 2 solution are: hydrochloric acid: hydrogen peroxide: water = 1:1:5 (the concentration of hydrochloric acid is 37%, and the concentration of hydrogen peroxide is 30%) , washed twice each, then rinsed with plenty of deionized water, and finally put in a spin dryer to dry.

根据本实用新型一种优选的实施方式,所述SOI片包括器件层1和支撑硅2;According to a preferred embodiment of the present invention, the SOI sheet includes a device layer 1 and a supporting silicon 2;

所述器件层1为p型<100>晶向高阻单晶硅,所述器件层1的厚度为20~50μm,优选为25~35μm。The device layer 1 is p-type <100> crystal orientation high-resistance single crystal silicon, and the thickness of the device layer 1 is 20-50 μm, preferably 25-35 μm.

在进一步优选的实施方式中,所述器件层1的电阻率大于 100Ω·cm。In a further preferred embodiment, the resistivity of the device layer 1 is greater than 100 Ω·cm.

在更进一步优选的实施方式中,所述支撑硅2为p型<100> 晶向高阻单晶硅,其厚度为420~550μm,优选为450~525μm,更优选为475~500μm。In a further preferred embodiment, the supporting silicon 2 is p-type <100> crystal orientation high-resistance single crystal silicon, and its thickness is 420-550 μm, preferably 450-525 μm, and more preferably 475-500 μm.

优选地,在所述器件层1和支撑硅2之间设置有第一二氧化硅层3,所述第一二氧化硅层3的厚度为500nm~800nm。Preferably, a first silicon dioxide layer 3 is disposed between the device layer 1 and the supporting silicon 2 , and the thickness of the first silicon dioxide layer 3 is 500 nm˜800 nm.

步骤2,第一次氧化,在器件层1上生长薄氧,作为离子注入缓冲层。Step 2, the first oxidation, growing thin oxygen on the device layer 1 as an ion implantation buffer layer.

其中,所述薄氧为二氧化硅,其厚度为30~50nm。Wherein, the thin oxygen is silicon dioxide, and its thickness is 30-50 nm.

步骤3,第一次光刻,在器件层1上表面刻蚀隔离槽窗口,然后进行磷离子注入,进行n+型掺杂,在600~1200℃下处理 8~10h,形成隔离槽。(如图5-b所示)。Step 3, the first photolithography, the isolation trench window is etched on the upper surface of the device layer 1, then phosphorus ion implantation is performed, n + type doping is performed, and the isolation trench is formed by processing at 600-1200° C. for 8-10 hours. (as shown in Figure 5-b).

根据本实用新型一种优选的实施方式,所述n+型掺杂的掺杂浓度为5E14-3~1E15cm-3According to a preferred embodiment of the present invention, the doping concentration of the n + type doping is 5E14 -3 -1E15 cm -3 .

本发明人发现,采用上述掺杂浓度易于PN结隔离。The inventors have found that the PN junction isolation is facilitated with the above-mentioned doping concentration.

其中,采用上述退火温度和真空处理时间的优点是,高温退火可激活杂质离子,消除离子注入的损伤,真空处理可防止大气中的氧气等其他物质对芯片造成影响,若退火温度过低或时间过短,会导致离子注入的损伤不能很好的消除,离子也不能到达替代位置,表面结晶状态不好;若退火温度过高或处理时间过长可能会导致注入的离子发生位移,易导致位错和缺陷密度。Among them, the advantages of using the above annealing temperature and vacuum treatment time are that high temperature annealing can activate impurity ions and eliminate the damage of ion implantation, and vacuum treatment can prevent other substances such as oxygen in the atmosphere from affecting the chip. If the annealing temperature is too high or the treatment time is too long, the implanted ions may be displaced, which may easily lead to the displacement of the implanted ions. Error and defect density.

步骤4,第二次光刻,在器件层1上表面刻蚀负载电阻窗口,磷离子注入,进行n-型掺杂,形成负载电阻。Step 4, the second photolithography, the load resistance window is etched on the upper surface of the device layer 1, phosphorus ions are implanted, and n - type doping is performed to form the load resistance.

步骤5,第三次光刻,在器件层1上表面刻蚀基区窗口,硼离子注入,进行p+型重掺杂,形成基区。Step 5, the third photolithography, the base region window is etched on the upper surface of the device layer 1, boron ions are implanted, and p + type heavy doping is performed to form the base region.

其中,p+型重掺杂的浓度为1E13-3~1E15cm-3Among them, the concentration of p + type heavy doping is 1E13 -3 -1E15cm -3 .

步骤6,高温退火,形成杂质分布。Step 6, high temperature annealing to form impurity distribution.

根据本实用新型一种优选的实施方式,所述高温退火处理如下进行:在600~1200℃下真空环境处理20~30min。According to a preferred embodiment of the present invention, the high-temperature annealing treatment is performed as follows: treatment in a vacuum environment at 600-1200° C. for 20-30 minutes.

其中,采用上述退火温度和真空处理时间的优点是:高温退火可激活杂质离子,真空处理可防止大气中的氧气等其他物质对芯片造成影响。若退火温度过低或时间过短会导致离子注入的损伤不能很好的消除,离子也不能到达替代位置,表面结晶状态不好;退火温度过高或处理时间过长可能会导致注入的离子发生位移,易导致位错和缺陷密度。Among them, the advantages of using the above annealing temperature and vacuum treatment time are: high temperature annealing can activate impurity ions, and vacuum treatment can prevent other substances such as oxygen in the atmosphere from affecting the chip. If the annealing temperature is too low or the treatment time is too short, the damage of the ion implantation cannot be eliminated well, the ions cannot reach the replacement position, and the surface crystalline state is not good; if the annealing temperature is too high or the treatment time is too long, the implanted ions may displacement, which can easily lead to dislocation and defect density.

步骤7,清洗SOI片,采用化学气相沉积法在器件层1上表面生长二氧化硅层。In step 7, the SOI sheet is cleaned, and a silicon dioxide layer is grown on the surface of the device layer 1 by chemical vapor deposition.

其中,生长的二氧化硅层的厚度为500~600nm。The thickness of the grown silicon dioxide layer is 500 to 600 nm.

步骤8,第四次光刻,采用化学气相沉积法原位生长掺磷 nc-Si:H(n+),形成掺磷nc-Si:H(n+)薄膜作为霍尔磁场传感器磁敏感层(如图5-b所示)。Step 8, the fourth photolithography, using chemical vapor deposition method to grow phosphorus-doped nc-Si:H(n + ) in situ to form a phosphorus-doped nc-Si:H(n + ) film as the magnetic sensitive layer of the Hall magnetic field sensor (as shown in Figure 5-b).

根据本实用新型一种优选的实施方式,所述原位生长的 nc-Si:H(n+)薄膜的厚度为50~120nm。According to a preferred embodiment of the present invention, the thickness of the in-situ grown nc-Si:H(n + ) thin film is 50-120 nm.

在进一步优选的实施方式中,所述磷的掺杂量为 5E13-3~1E15cm-3In a further preferred embodiment, the doping amount of the phosphorus ranges from 5E13 -3 to 1E15cm -3 .

步骤9,清洗SOI片,采用等离子体化学气相沉积法 (PECVD)在器件层1的上表面原位生长掺杂硼的纳米多晶硅薄膜。In step 9, the SOI sheet is cleaned, and a boron-doped nano-polysilicon thin film is grown in-situ on the upper surface of the device layer 1 by plasma chemical vapor deposition (PECVD).

根据本实用新型一种优选的实施方式,所述沉积温度为 600℃~650℃,优选为620℃。According to a preferred embodiment of the present invention, the deposition temperature is 600°C to 650°C, preferably 620°C.

在进一步优选的实施方式中,所述原位生长的掺杂硼的纳米多晶硅薄膜的厚度为60~100nm。In a further preferred embodiment, the thickness of the in-situ boron-doped nano-polysilicon thin film is 60-100 nm.

在更进一步优选的实施方式中,所述硼的掺杂量为 1E13-3~1E15cm-3In a further preferred embodiment, the doping amount of the boron ranges from 1E13 -3 to 1E15 cm -3 .

步骤10,第五次光刻,刻蚀器件层1上表面的掺杂硼的纳米多晶硅薄膜,形成12个压敏电阻(Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、 Ry3、Ry4、Rz1、Rz2、Rz3、Rz4)(如图5-c所示)。Step 10, the fifth photolithography, etching the boron-doped nano-polysilicon film on the upper surface of the device layer 1 to form 12 varistors (R x1 , R x2 , R x3 , R x4 , R y1 , R y2 , R y3 , R y4 , R z1 , R z2 , R z3 , R z4 ) (as shown in Figure 5-c).

步骤11,清洗硅片,在器件层1上表面采用化学气相沉积法生长二氧化硅层,作为绝缘层。Step 11 , cleaning the silicon wafer, and using a chemical vapor deposition method to grow a silicon dioxide layer on the upper surface of the device layer 1 as an insulating layer.

其中,生长的二氧化硅层的厚度为400~600nm。The thickness of the grown silicon dioxide layer is 400 to 600 nm.

步骤12,第六次光刻,在器件层1上表面刻蚀引线孔。Step 12, the sixth photolithography, etching lead holes on the upper surface of the device layer 1.

步骤13,第七次光刻,在支撑硅2背部采用深槽刻蚀技术(ICP)刻蚀C型硅杯发射区窗口和加速度传感器芯片的质量块。Step 13, the seventh photolithography, the C-type silicon cup emission area window and the mass block of the acceleration sensor chip are etched on the back of the support silicon 2 by using a deep groove etching technique (ICP).

其中,采用深槽刻蚀技术(ICP)刻蚀至第一二氧化硅层3 处。Wherein, deep groove etching technology (ICP) is used to etch to the first silicon dioxide layer 3 .

步骤14,在支撑硅2背部的发射区窗口处进行n+型重掺杂形成发射区,然后进行高温退火处理。Step 14, performing n + type heavy doping at the emitter region window on the back of the support silicon 2 to form an emitter region, and then performing high temperature annealing treatment.

其中,所述高温退火如下处理:在600~1200℃下真空环境处理20~30min。Wherein, the high-temperature annealing is treated as follows: treatment in a vacuum environment at 600-1200° C. for 20-30 minutes.

步骤15,清洗硅片,在器件层1上表面和支撑硅2下表面磁控溅射生长金属铝层,形成金属电极层;然后进行第八次光刻,在器件层1上表面反刻金属铝层,形成金属电极。Step 15: Clean the silicon wafer, grow a metal aluminum layer on the upper surface of the device layer 1 and the lower surface of the supporting silicon 2 by magnetron sputtering to form a metal electrode layer; The aluminum layer, forming the metal electrode.

其中,所述金属铝层的厚度为0.5~1.0μm。Wherein, the thickness of the metal aluminum layer is 0.5-1.0 μm.

步骤16,清洗硅片,在器件层1上表面采用化学气相沉积法生长二氧化硅层,作为钝化层。Step 16 , cleaning the silicon wafer, and using a chemical vapor deposition method to grow a silicon dioxide layer on the upper surface of the device layer 1 as a passivation layer.

其中,所述生长的二氧化硅层的厚度为500-600nm。Wherein, the thickness of the grown silicon dioxide layer is 500-600 nm.

步骤17,第九次光刻,刻蚀钝化层,形成压焊点;然后清洗硅片,进行合金化处理形成欧姆接触(如图5-d所示)。Step 17, the ninth photolithography, the passivation layer is etched to form the bonding point; then the silicon wafer is cleaned and alloyed to form an ohmic contact (as shown in Fig. 5-d).

根据本实用新型一种优选的实施方式,所述合金化处理如下进行:在300~500℃下处理10~50min,优选在400~450℃下处理20~40min,更优选在420℃下处理30min。According to a preferred embodiment of the present invention, the alloying treatment is carried out as follows: treatment at 300-500°C for 10-50min, preferably at 400-450°C for 20-40min, more preferably at 420°C for 30min .

步骤18,第十次光刻,深槽刻蚀技术(ICP)刻蚀硅片器件层1,刻蚀至第一二氧化硅层3处,释放L型梁结构(如图5-e 所示)。Step 18, the tenth photolithography, deep groove etching (ICP) etching the silicon wafer device layer 1, etching to the first silicon dioxide layer 3, releasing the L-shaped beam structure (as shown in Figure 5-e ) ).

步骤19,将SOI片与具有过载保护结构的硼硅玻璃片键合。Step 19, bonding the SOI sheet with the borosilicate glass sheet with the overload protection structure.

其中,所述硼硅玻璃片具有凹槽结构,与支撑硅2键合连接,使得加速度传感器的两个质量块能够在凹槽内自由移动。Wherein, the borosilicate glass sheet has a groove structure and is bonded and connected with the support silicon 2, so that the two mass blocks of the acceleration sensor can move freely in the groove.

优选地,其厚度为0.5~1mm。Preferably, its thickness is 0.5-1 mm.

在本实用新型中,基于微电子机械加工技术(MEMS)在 SOI晶圆器件层(p型<100>晶向高阻单晶硅)上完成单片集成三维磁场/三轴加速度传感器芯片制作,并通过键合工艺和内引线压焊技术实现芯片封装,可实现对三维磁场和三轴加速度的同时测量。制备得到的磁场/加速度集成传感器,具有体积小、易于批量生产的特点。In the present invention, the monolithic integrated three-dimensional magnetic field/three-axis acceleration sensor chip is fabricated on the SOI wafer device layer (p-type <100> crystal orientation high-resistance monocrystalline silicon) based on micro-electromechanical processing technology (MEMS). And through the bonding process and the inner lead pressure welding technology to realize the chip packaging, it can realize the simultaneous measurement of the three-dimensional magnetic field and the three-axis acceleration. The prepared magnetic field/acceleration integrated sensor has the characteristics of small size and easy mass production.

实施例Example

实施例1Example 1

按照下述步骤集成化制作磁场/加速度集成传感器:Follow the steps below to integrate the magnetic field/acceleration integrated sensor:

步骤1,清洗SOI片,第零次光刻(作为光刻工艺的对版标记),在器件层上制作对版标记。Step 1, cleaning the SOI sheet, the 0th photolithography (as the registration mark of the photolithography process), and making the registration mark on the device layer.

其中,采用RCA标准清洗法对单晶硅衬底进行清洗,所述清洗如下进行:将SOI片用浓硫酸煮至冒白烟,冷却后用大量 15去离子水冲洗,再分别采用电子清洗液1号APM(SC-1)、电子清洗液2号HPM(SC-2),其中1号液的主要成分及体积配比为:氨水:双氧水:水=1:1:5(氨水的浓度为27%,双氧水的浓度为 30%),其中2号液的主要成分及体积配比为:盐酸:双氧水:水=1:1:5(盐酸的浓度为37%,双氧水的浓度为30%),各清洗两次,然后用大量去离子水冲洗,最后放入甩干机中甩干。Among them, the RCA standard cleaning method is used to clean the single crystal silicon substrate, and the cleaning is carried out as follows: the SOI sheet is boiled with concentrated sulfuric acid until white smoke is emitted, and after cooling, it is rinsed with a large amount of 15% deionized water, and then an electronic cleaning solution is used respectively. No. 1 APM (SC-1), electronic cleaning liquid No. 2 HPM (SC-2), the main components and volume ratio of No. 1 liquid are: ammonia water: hydrogen peroxide: water = 1:1:5 (the concentration of ammonia water is 27%, the concentration of hydrogen peroxide is 30%), and the main components and volume ratio of No. 2 solution are: hydrochloric acid: hydrogen peroxide: water = 1:1:5 (the concentration of hydrochloric acid is 37%, and the concentration of hydrogen peroxide is 30%) , washed twice each, then rinsed with plenty of deionized water, and finally put in a spin dryer to dry.

其中,器件层为p型<100>晶向高阻单晶硅,厚度为30μm,电阻率大于100Ω·cm,支撑硅为p型<100>晶向高阻单晶硅,其厚度为490μm,第一二氧化硅层3的厚度为600nm。Among them, the device layer is p-type <100> crystal orientation high-resistance single-crystal silicon with a thickness of 30 μm and a resistivity greater than 100 Ω·cm, and the supporting silicon is p-type <100> crystal-oriented high-resistance single crystal silicon with a thickness of 490 μm. The thickness of the first silicon dioxide layer 3 is 600 nm.

步骤2,第一次氧化,在器件层上生长薄氧(二氧化硅),作为离子注入缓冲层。Step 2, the first oxidation, growing thin oxygen (silicon dioxide) on the device layer as an ion implantation buffer layer.

其中,所述薄氧的厚度为40nm。Wherein, the thickness of the thin oxygen is 40 nm.

步骤3,第一次光刻,在器件层上表面进行磷离子注入,实现n+型掺杂,在1000℃下处理10h,形成隔离槽;Step 3, the first photolithography, phosphorus ion implantation is performed on the upper surface of the device layer to realize n + type doping, and the isolation trench is formed by processing at 1000° C. for 10 hours;

其中,n+型掺杂的掺杂浓度为5E14-3cm-3Among them, the doping concentration of n + type doping is 5E14 -3 cm -3 .

步骤4,第二次光刻,在器件层上表面刻蚀负载电阻窗口,磷离子注入,进行n-型掺杂,形成负载电阻。Step 4, the second photolithography, the load resistance window is etched on the upper surface of the device layer, phosphorus ions are implanted, and n - type doping is performed to form the load resistance.

步骤5,第三次光刻,在器件层1上表面刻蚀基区窗口,硼离子注入,进行p+型重掺杂,形成基区。Step 5, the third photolithography, the base region window is etched on the upper surface of the device layer 1, boron ions are implanted, and p + type heavy doping is performed to form the base region.

其中,p+型重掺杂的浓度为1E13-3cm-3Among them, the concentration of p + type heavy doping is 1E13 -3 cm -3 .

步骤6,高温退火,形成杂质分布。Step 6, high temperature annealing to form impurity distribution.

其中,高温退火处理如下进行:1000℃下真空环境处理 25min。Among them, the high-temperature annealing treatment was carried out as follows: 1000 °C for 25 min in a vacuum environment.

步骤7,清洗SOI片,采用化学气相沉积法在器件层上表面生长二氧化硅层。Step 7, cleaning the SOI sheet, and using a chemical vapor deposition method to grow a silicon dioxide layer on the upper surface of the device layer.

其中,生长的二氧化硅层的厚度为550nm。The thickness of the grown silicon dioxide layer was 550 nm.

步骤8,第四次光刻,采用化学气相沉积法原位生长掺磷 nc-Si:H(n+),形成掺磷nc-Si:H(n+)薄膜作为霍尔磁场传感器磁敏感层。Step 8, the fourth photolithography, using chemical vapor deposition method to grow phosphorus-doped nc-Si:H(n + ) in situ to form a phosphorus-doped nc-Si:H(n + ) film as the magnetic sensitive layer of the Hall magnetic field sensor .

其中,所述原位生长的nc-Si:H(n+)薄膜的厚度为90nm;所述磷的掺杂量为5E13- 3cm-3Wherein, the thickness of the in-situ nc-Si:H(n + ) thin film is 90 nm; the doping amount of phosphorus is 5E13 - 3 cm -3 .

步骤9,清洗SOI片,采用等离子体化学气相沉积法 (PECVD)在器件层的上表面原位生长掺杂硼的纳米多晶硅薄膜。In step 9, the SOI sheet is cleaned, and a boron-doped nano-polysilicon thin film is grown in-situ on the upper surface of the device layer by plasma chemical vapor deposition (PECVD).

其中,沉积温度为620℃,原位生长的掺杂硼的纳米多晶硅薄膜的厚度为80nm,硼的掺杂量为1E13-3cm-3 Among them, the deposition temperature was 620°C, the thickness of the in-situ boron-doped nano-polysilicon film was 80 nm, and the doping amount of boron was 1E13 -3 cm -3

步骤10,第五次光刻,刻蚀器件层上表面的掺杂硼的纳米多晶硅薄膜,形成12个压敏电阻(Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、 Ry3、Ry4、Rz1、Rz2、Rz3、Rz4)。Step 10, the fifth photolithography, etching the boron-doped nano-polysilicon film on the upper surface of the device layer to form 12 varistors ( Rx1 , Rx2 , Rx3 , Rx4 , Ry1 , Ry2 , R y3 , R y4 , R z1 , R z2 , R z3 , R z4 ).

步骤11,清洗硅片,在器件层上表面采用化学气相沉积法生长二氧化硅层,作为绝缘层。In step 11, the silicon wafer is cleaned, and a silicon dioxide layer is grown on the upper surface of the device layer by chemical vapor deposition as an insulating layer.

其中,生长的二氧化硅层的厚度为40nm。The thickness of the grown silicon dioxide layer was 40 nm.

步骤12,第六次光刻,在器件层上表面刻蚀引线孔。Step 12, the sixth photolithography, etching lead holes on the upper surface of the device layer.

步骤13,第七次光刻,在支撑硅2背部采用深槽刻蚀技术 (ICP)刻蚀C型硅杯发射区窗口。Step 13, the seventh photolithography, the C-type silicon cup emission area window is etched on the back of the support silicon 2 by using a deep groove etching technique (ICP).

其中,采用深槽刻蚀技术(ICP)刻蚀至第一二氧化硅层处。Wherein, deep groove etching technology (ICP) is used to etch to the first silicon dioxide layer.

步骤14,在支撑硅2背部的发射区窗口处进行n+型重掺杂形成发射区,然后进行高温退火处理。Step 14, performing n + type heavy doping at the emitter region window on the back of the support silicon 2 to form an emitter region, and then performing high temperature annealing treatment.

其中,n+型掺杂的掺杂浓度为5E13-3cm-3Among them, the doping concentration of n + type doping is 5E13 -3 cm -3 .

其中,高温退火处理如下处理:850℃下真空环境处理 28min。Among them, the high-temperature annealing treatment is as follows: treatment in a vacuum environment at 850 °C for 28 min.

步骤15,清洗硅片,在器件层上表面和支撑硅2下表面磁控溅射生长金属铝层,形成金属电极层;然后进行第八次光刻,在器件层上表面反刻金属铝层,形成金属电极。Step 15, clean the silicon wafer, grow a metal aluminum layer on the upper surface of the device layer and the lower surface of the supporting silicon 2 by magnetron sputtering to form a metal electrode layer; then perform the eighth photolithography, and reversely etch the metal aluminum layer on the upper surface of the device layer , forming a metal electrode.

其中,金属铝层的厚度为0.8μm。The thickness of the metal aluminum layer is 0.8 μm.

步骤16,清洗硅片,在器件层上表面采用化学气相沉积法生长二氧化硅层,作为钝化层。In step 16, the silicon wafer is cleaned, and a silicon dioxide layer is grown on the upper surface of the device layer by chemical vapor deposition as a passivation layer.

其中,生长的二氧化硅层的厚度为550nm。The thickness of the grown silicon dioxide layer was 550 nm.

步骤17,第九次光刻,刻蚀钝化层,形成压焊点;然后清洗硅片,进行合金化处理形成欧姆接触。Step 17, the ninth photolithography, the passivation layer is etched to form the bonding point; then the silicon wafer is cleaned and alloyed to form an ohmic contact.

其中,合金化处理如下进行:在420℃下处理30min。Among them, the alloying treatment was carried out as follows: treatment at 420° C. for 30 min.

步骤18,第十次光刻,深槽刻蚀技术(ICP)刻蚀硅片器件层,刻蚀至第一二氧化硅层处,释放L型梁结构。Step 18, the tenth photolithography, deep groove etching (ICP) etching the silicon wafer device layer, etching to the first silicon dioxide layer, releasing the L-shaped beam structure.

步骤19,将SOI片与具有过载保护结构的硼硅玻璃片键合。Step 19, bonding the SOI sheet with the borosilicate glass sheet with the overload protection structure.

其中,所述硼硅玻璃片具有凹槽结构,其厚度为0.5~1mm,与支撑硅键合连接。Wherein, the borosilicate glass sheet has a groove structure with a thickness of 0.5-1 mm, and is bonded and connected with the supporting silicon.

实施例2Example 2

本实施例所用方法与实施例1相似,区别在于,步骤1中,器件层的厚度为50μm,支撑硅的厚度为420μm。The method used in this embodiment is similar to that in Embodiment 1, except that, in Step 1, the thickness of the device layer is 50 μm, and the thickness of the supporting silicon is 420 μm.

实施例3Example 3

本实施例所用方法与实施例1相似,区别在于,步骤3中,高温退火处理如下进行:于1200℃下真空环境处理8h。The method used in this example is similar to that in Example 1, with the difference that, in step 3, the high-temperature annealing treatment is carried out as follows: treatment in a vacuum environment at 1200° C. for 8 hours.

实施例4Example 4

本实施例所用方法与实施例1相似,区别在于,步骤6中,高温退火处理如下进行:于600℃下真空环境处理30min。The method used in this example is similar to that in Example 1, except that in step 6, the high-temperature annealing treatment is performed as follows: treatment in a vacuum environment at 600° C. for 30 minutes.

实施例5Example 5

本实施例所用方法与实施例1相似,区别在于,步骤8中,所述原位生长的nc-Si:H(n+)薄膜的厚度为50nm。The method used in this embodiment is similar to that in Embodiment 1, except that in step 8, the thickness of the in-situ grown nc-Si:H(n + ) thin film is 50 nm.

实施例6Example 6

本实施例所用方法与实施例1相似,区别在于,步骤8中,所述原位生长的nc-Si:H(n+)薄膜的厚度为120nm。The method used in this embodiment is similar to that in Embodiment 1, except that, in step 8, the thickness of the in-situ grown nc-Si:H(n + ) thin film is 120 nm.

实施例7Example 7

本实施例所用方法与实施例1相似,区别在于,步骤8中,所述磷的掺杂量为1E15cm-3The method used in this embodiment is similar to that in embodiment 1, except that in step 8, the doping amount of phosphorus is 1E15cm −3 .

实施例8Example 8

本实施例所用方法与实施例1相似,区别在于,步骤9中,所述沉积温度为650℃。The method used in this embodiment is similar to that of embodiment 1, the difference is that in step 9, the deposition temperature is 650°C.

实施例9Example 9

本实施例所用方法与实施例1相似,区别在于,步骤9中,原位生长的掺杂硼的纳米多晶硅薄膜的厚度为60nm。The method used in this embodiment is similar to that in Embodiment 1, except that in step 9, the thickness of the boron-doped nano-polysilicon thin film grown in situ is 60 nm.

实施例10Example 10

本实施例所用方法与实施例1相似,区别在于,步骤9中,原位生长的掺杂硼的纳米多晶硅薄膜的厚度为100nm。The method used in this embodiment is similar to that in Embodiment 1, except that in step 9, the thickness of the boron-doped nano-polysilicon thin film grown in situ is 100 nm.

实施例11Example 11

本实施例所用方法与实施例1相似,区别在于,步骤9中,所述硼的掺杂量为1E15cm-3The method used in this embodiment is similar to that in embodiment 1, the difference is that in step 9, the doping amount of boron is 1E15cm −3 .

实施例12Example 12

本实施例所用方法与实施例1相似,区别在于,步骤17中,所述合金化处理如下进行:在400℃下处理40min。The method used in this example is similar to that in Example 1, except that, in step 17, the alloying treatment is performed as follows: treatment at 400° C. for 40 min.

实施例13Example 13

本实施例所用方法与实施例1相似,区别在于,步骤17中,所述合金化处理如下进行:在450℃下处理20min。The method used in this example is similar to that in Example 1, with the difference that, in step 17, the alloying treatment is performed as follows: treatment at 450° C. for 20 minutes.

实验例Experimental example

实验例1Experimental example 1

采用磁场发生器(CH-100)、可编程线性直流电源(RIGOL DP832A)和数字万用表(Agilent 34410A)等仪器搭建三维磁场传感器特性测试系统,在室温情况下,工作电压为5V,基极注入电流(Ib)分别为1mA、2mA、3mA、4mA和5mA的情况下,对本实用新型实施例1所述的磁场传感器进行特性测试,对磁场传感器分别施加沿x轴、y轴和z轴方向的磁场(-500mT~500mT,步长为100mT),分别采集磁场传感器的第一差分结构、第二差分结构及霍尔元件的输出电压,磁场传感器输出电压与外加磁场的关系曲线如图6-a~图6-c所示。A magnetic field generator (CH-100), programmable linear DC power supply (RIGOL DP832A) and digital multimeter (Agilent 34410A) are used to build a three-dimensional magnetic field sensor characteristic test system. At room temperature, the operating voltage is 5V, and the base injects current. ( Ib ) under the situation of 1mA, 2mA, 3mA, 4mA and 5mA respectively, the characteristic test is carried out to the magnetic field sensor described in Embodiment 1 of the present utility model, and the magnetic field sensor is respectively applied along the x-axis, y-axis and z-axis direction. Magnetic field (-500mT~500mT, step size is 100mT), respectively collect the output voltage of the first differential structure, the second differential structure and the Hall element of the magnetic field sensor. The relationship between the output voltage of the magnetic field sensor and the applied magnetic field is shown in Figure 6-a ~ shown in Figure 6-c.

其中,图6-a为当磁场沿x轴方向磁场传感器第一差分结构的输出电压随外加磁场变化的关系曲线;图6-b为当磁场沿y轴方向磁场传感器第二差分结构的输出电压随外加磁场变化的关系曲线;图6-c为当磁场沿z轴方向磁场传感器的霍尔元件的输出电压随外加磁场变化的关系曲线。Among them, Figure 6-a is the relationship curve of the output voltage of the first differential structure of the magnetic field sensor with the applied magnetic field when the magnetic field is along the x-axis direction; Figure 6-b is the output voltage of the second differential structure of the magnetic field sensor when the magnetic field is along the y-axis direction The relationship curve with the change of the applied magnetic field; Figure 6-c is the relationship curve of the output voltage of the Hall element of the magnetic field sensor when the magnetic field is along the z-axis direction with the change of the applied magnetic field.

由图6-a和图6-b可知,当外加磁场恒定时,磁场传感器沿x 轴和y轴方向的第一差分结构及第二差分结构输出电压随基极注入电流的增加而增加;当基极注入电流恒定时,磁场传感器沿x轴和y轴方向的第一差分结构及第二差分结构输出电压随外加磁场的增加而增加;由图6-c可知,当输入电压为5V恒定时,检测z轴方向磁场的霍尔元件输出电压随外加磁场的增加而增加。It can be seen from Figure 6-a and Figure 6-b that when the external magnetic field is constant, the output voltage of the first differential structure and the second differential structure of the magnetic field sensor along the x-axis and y-axis directions increases with the increase of the base injection current; when When the base injection current is constant, the output voltages of the first differential structure and the second differential structure along the x-axis and y-axis of the magnetic field sensor increase with the increase of the applied magnetic field; it can be seen from Figure 6-c that when the input voltage is constant at 5V , the output voltage of the Hall element that detects the magnetic field in the z-axis direction increases with the increase of the applied magnetic field.

采用标准振动台(Dongling ESS-050)、可编程线性直流电源(RIGOL DP832A)和数字万用表(Agilent 34410A)等仪器搭建三轴加速度传感器特性测试系统,在室温条件下,工作电压为5V时,分别对实施例1所述加速度芯片施加沿x轴、y轴和z 轴方向的加速度(0~30g,步长为5g),分别采集加速度芯片的第一个惠斯通电桥、第二个惠斯通电桥以及第三个惠斯通电桥的输出电压,加速度传感器输出电压与外加加速度的关系曲线如图7所示。A standard vibration table (Dongling ESS-050), programmable linear DC power supply (RIGOL DP832A) and digital multimeter (Agilent 34410A) were used to build a three-axis accelerometer characteristic test system. Apply acceleration along the x-axis, y-axis and z-axis to the acceleration chip described in Example 1 (0-30g, step size is 5g), and collect the first Wheatstone bridge and the second Wheatstone bridge of the acceleration chip respectively. The relationship between the output voltage of the power-on bridge and the third Wheatstone bridge, the output voltage of the acceleration sensor and the applied acceleration is shown in Figure 7.

其中,曲线A为当外加加速度沿x轴方向时,第一个惠斯通电桥的输出电压随外加加速度变化的关系曲线,曲线B为当外加加速度沿y轴方向时,第二个惠斯通电桥的输出电压随外加加速度变化的关系曲线,曲线C为当外加加速度沿z轴方向时,第三个惠斯通电桥的输出电压随外加加速度变化的关系曲线。Among them, curve A is the relationship curve of the output voltage of the first Wheatstone bridge with the applied acceleration when the applied acceleration is along the x-axis direction, and curve B is when the applied acceleration is along the y-axis direction, the second Wheatstone bridge The relationship curve of the output voltage of the bridge with the applied acceleration, the curve C is the relationship curve of the output voltage of the third Wheatstone bridge with the applied acceleration when the applied acceleration is along the z-axis direction.

由图7可知,当工作电压恒定时,加速度传感器第一个惠斯通电桥、第二个惠斯通电桥以及第三个惠斯通电桥的输出电压随外加加速度的增加而呈线性增加。It can be seen from Figure 7 that when the working voltage is constant, the output voltages of the first Wheatstone bridge, the second Wheatstone bridge and the third Wheatstone bridge of the acceleration sensor increase linearly with the increase of the applied acceleration.

由上述可知,当电源电压为5.0V,基极注入电流为5mA时,本实用新型所述传感器x轴方向磁场传感器灵敏度为154mV/T, y轴方向磁场传感器灵敏度158mV/T,z轴方向磁场传感器灵敏度91mV/T;x轴方向加速度传感器灵敏度为0.95mV/g,y轴方向加速度传感器灵敏度0.61mV/g,z轴方向加速度传感器灵敏度 0.14mV/g。因此,本实用新型所述集成传感器可以实现对三维磁场和三轴加速度的同时检测,并且得到的x、y和z三个方向的灵敏度接近一致。It can be seen from the above that when the power supply voltage is 5.0V and the base injection current is 5mA, the sensitivity of the magnetic field sensor in the x-axis direction of the sensor of the present invention is 154mV/T, the sensitivity of the magnetic field sensor in the y-axis direction is 158mV/T, and the magnetic field in the z-axis direction is 158mV/T. The sensitivity of the sensor is 91mV/T; the sensitivity of the acceleration sensor in the x-axis direction is 0.95mV/g, the sensitivity of the acceleration sensor in the y-axis direction is 0.61mV/g, and the sensitivity of the acceleration sensor in the z-axis direction is 0.14mV/g. Therefore, the integrated sensor of the present invention can realize the simultaneous detection of the three-dimensional magnetic field and the three-axis acceleration, and the obtained sensitivities in the three directions of x, y and z are close to the same.

在本实用新型的描述中,需要说明的是,术语“上”、“下”、“内”、“外”、“前”、“后”等指示的方位或位置关系为基于本实用新型工作状态下的方位或位置关系,仅是为了便于描述本实用新型和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本实用新型的限制。此外,术语“第一”、“第二”、“第三”、“第四”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inside", "outside", "front", "rear", etc. is based on the work of the present utility model. The orientation or positional relationship in the state is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a Utility Model Restrictions. Furthermore, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed to indicate or imply relative importance.

在本实用新型的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”“相连”“连接”应作广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体的连接普通;可以是机械连接,也可以是电连接;可以是直接连接,也可以通过中间媒介间接连接,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本实用新型中的具体含义。In the description of the present invention, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or an integral connection is common; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or the internal communication between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood in specific situations.

以上结合了优选的实施方式对本实用新型进行了说明,不过这些实施方式仅是范例性的,仅起到说明性的作用。在此基础上,可以对本实用新型进行多种替换和改进,这些均落入本实用新型的保护范围内。The present invention has been described above with reference to the preferred embodiments, but these embodiments are only exemplary and only serve an illustrative role. On this basis, various replacements and improvements can be made to the present invention, which all fall within the protection scope of the present invention.

Claims (10)

1. The magnetic field/acceleration integrated sensor is characterized by comprising a magnetic field sensor and an acceleration sensor which are arranged on the same chip so as to realize the simultaneous measurement of a three-dimensional magnetic field and three-axis acceleration;
the magnetic field/acceleration integrated sensor takes an SOI (silicon on insulator) sheet as a substrate, wherein the SOI sheet comprises a device layer (1), a supporting silicon (2) and a first silicon dioxide layer (3);
wherein the thickness of the device layer (1) is 20-50 μm, and the thickness of the supporting silicon (2) is 420-550 μm;
the magnetic field sensor comprises four silicon magnetosensitive triodes which are arranged on the device layer (1) and have a three-dimensional structure and a Hall magnetic field sensor (H),
the four silicon magnetosensitive triodes are combined in pairs to form two magnetosensitive units which are respectively used for detecting magnetic fields in the x-axis direction and the y-axis direction;
the Hall magnetic field sensor (H) is used for detecting a magnetic field in the z-axis direction;
a suspension structure is etched in the middle of the acceleration sensor, and the suspension structure comprises a mass block located in the center and four double-L-shaped beams located on two sides of the mass block;
the mass blocks are two, respectively first mass blocks (m)1) And a second mass (m)2);
Each double-L-shaped beam comprises two single-L-shaped beams, and the four double-L-shaped beams comprise eight single-L-shaped beams which are respectively a first single-L-shaped beam (L)1) Second single L-shaped beam (L)2) Third single L-shaped beam (L)3) Fourth single L-shaped beam (L)4) Fifth single L-shaped Beam (L)5) Sixth single L-shaped beam (L)6) Seventh single L-shaped beam (L)7) And eighth single L-shaped beam (L)8)。
2. The sensor of claim 1, wherein the four silicon magnetosensitive transistors are a first silicon magnetosensitive transistor (SMST1), a second silicon magnetosensitive transistor (SMST2), a third silicon magnetosensitive transistor (SMST3), and a fourth silicon magnetosensitive transistor (SMST4), respectively,
wherein the first silicon magnetic sensitive triode (SMST1) and the second silicon magnetic sensitive triode (SMST2) are symmetrically arranged along the x axis of the magnetic field sensor at two sides of the center of the magnetic field sensor chip,
and the third silicon magnetosensitive triode (SMST3) and the fourth silicon magnetosensitive triode (SMST4) are symmetrically arranged at two sides of the center of the magnetic field sensor chip along the y axis of the magnetic field sensor.
3. The sensor of claim 1, wherein the magnetic sensitive layer of the Hall magnetic field sensor is a phosphorus-doped nano-silicon thin film nc-Si: H (n)+),
The thickness of the magnetic sensitive layer is 50 nm-120 nm.
4. A sensor according to claim 1, characterized in that an isolation trench (5) is made on the device layer (1) around each silicon magnetoresistor transistor to prevent interaction between the silicon magnetoresistor transistor and other devices;
the isolation groove (5) is n+And (4) carrying out type doping.
5. A sensor according to claim 1, characterized in that in the first mass (m)1) And a second mass (m)2) A first middle beam (L) is arranged between the two9) And a second intermediate beam (L)10),
The first intermediate beam (L)9) And a second intermediate beam (L)10) Are all connected with the first mass block (m)1) And a second mass (m)2) Is vertically arranged.
6. Sensor according to claim 5, characterized in that the first mass (m)1) And a second mass (m)2) Are all equal to the maximum thickness of the magnetic field/acceleration integrated sensor;
the first single L-shaped beam (L)1) To eighth single L-shaped beam (L)8) A first intermediate beam (L)9) And a second intermediate beam (L)10) Are all the same as the thickness of the device layer (1).
7. Sensor according to claim 5, characterized in that in the first single L-shaped beam (L)1) Second single L-shaped beam (L)2) Third single L-shaped beam (L)3) And a fourth single L-shaped beam (L)4) Are respectively provided with a first piezoresistor (R) in the x-axis directionx1) And a second piezoresistor (R) in the x-axis directionx2) And a third piezoresistor (R) in the x-axis directionx3) And a fourth varistor (R) in the x-axis directionx4);
In the fifth single L-shaped beam (L)5) Sixth single L-shaped beam (L)6) Seventh single L-shaped beam (L)7) And eighth single L-shaped beam (L)8) Are respectively provided with a first piezoresistor (R) in the y-axis directiony1) And a second piezoresistor (R) in the y-axis directiony2) And a third piezoresistor (R) in the y-axis directiony3) And a fourth varistor (R) in the y-axis directiony4);
At the first intermediate beam (L)9) And a first mass (m)1) And a second mass (m)2) The root parts of the joints are respectively provided with a first piezoresistor (R) in the z-axis directionz1) And a second piezoresistor (R) in the z-axis directionz2);
At the second intermediate beam (L)10) And a first mass (m)1) And a second mass (m)2) The root parts of the joints are respectively provided with a third piezoresistor (R) in the z-axis directionz3) And a fourth piezoresistor (R) in the z-axis directionz4)。
8. The sensor of claim 7, wherein the piezoresistors in the x-axis, y-axis and z-axis directions are all boron-doped nano-polysilicon thin film resistors.
9. A sensor according to claim 1, characterized in that a glass plate is also arranged below the acceleration sensor, which has a groove structure, bonded to the supporting silicon (2), so that the two masses of the acceleration sensor can move freely in the grooves.
10. The sensor of claim 9, wherein the glass sheet is a borosilicate glass sheet having a thickness of 0.5 to 1 mm.
CN201921572747.9U 2019-09-20 2019-09-20 Magnetic field/acceleration integrated sensor Active CN211263740U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921572747.9U CN211263740U (en) 2019-09-20 2019-09-20 Magnetic field/acceleration integrated sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921572747.9U CN211263740U (en) 2019-09-20 2019-09-20 Magnetic field/acceleration integrated sensor

Publications (1)

Publication Number Publication Date
CN211263740U true CN211263740U (en) 2020-08-14

Family

ID=71954523

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921572747.9U Active CN211263740U (en) 2019-09-20 2019-09-20 Magnetic field/acceleration integrated sensor

Country Status (1)

Country Link
CN (1) CN211263740U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110632538A (en) * 2019-09-20 2019-12-31 黑龙江大学 A magnetic field/acceleration integrated sensor and integrated process method
CN114778891A (en) * 2022-05-09 2022-07-22 北京信息科技大学 Three-axis accelerometer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110632538A (en) * 2019-09-20 2019-12-31 黑龙江大学 A magnetic field/acceleration integrated sensor and integrated process method
CN110632538B (en) * 2019-09-20 2021-08-24 黑龙江大学 A magnetic field/acceleration integrated sensor and integrated process method
CN114778891A (en) * 2022-05-09 2022-07-22 北京信息科技大学 Three-axis accelerometer

Similar Documents

Publication Publication Date Title
CN110632538A (en) A magnetic field/acceleration integrated sensor and integrated process method
CN105241369B (en) MEMS strain gauge chip and manufacturing process thereof
CN101639391B (en) Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof
CN104931163B (en) A kind of double soi structure MEMS pressure sensor chips and preparation method thereof
CN103777037B (en) Multi-beam double-mass-block acceleration sensor chip and preparation method thereof
CN103344374B (en) Hidden-type MEMS pressure sensor sensitive chip and manufacturing method thereof
CN107796955B (en) Multi-beam type single-mass in-plane biaxial acceleration sensor chip and preparation method thereof
CN211263740U (en) Magnetic field/acceleration integrated sensor
CN211013319U (en) A MEMS pressure sensor
CN111238714A (en) Micro-pressure sensor and manufacturing process method thereof
CN112880883A (en) Pressure sensor and method for manufacturing the same
CN104089642A (en) Piezoresistive acceleration and pressure integrated sensor and manufacturing method thereof
CN109856425B (en) Monolithic integrated triaxial acceleration sensor and manufacturing process thereof
CN111498795B (en) A pressure sensor chip with isolation groove array structure and its preparation method
CN103630854B (en) Space three-dimensional magnetic field detection sensor
CN114684774B (en) Silicon piezoresistive pressure sensor chip and preparation method thereof
CN108387341A (en) Miniature vacuum gauge and working method thereof
CN108983119A (en) A kind of single-chip integration two-dimensional magnetic vector sensor and its integrated manufacture craft
CN208206381U (en) Miniature vacuum gauge
CN214625049U (en) A kind of all-dielectric isolation silicon magneto-sensitive triode
CN214702569U (en) Pressure sensor
CN117928788A (en) Pressure sensing device and preparation method and application thereof
CN203502576U (en) Space three-dimensional magnetic field detection sensor
CN116878702A (en) MEMS piezoresistive pressure sensor resistant to electromagnetic interference and preparation method thereof
CN105258738B (en) A kind of pressure/two-dimensional magnetic field monolithic integrated sensor

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant