CN111864330A - Resonator, filter and metallization method for ceramic - Google Patents
Resonator, filter and metallization method for ceramic Download PDFInfo
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- CN111864330A CN111864330A CN202010831505.8A CN202010831505A CN111864330A CN 111864330 A CN111864330 A CN 111864330A CN 202010831505 A CN202010831505 A CN 202010831505A CN 111864330 A CN111864330 A CN 111864330A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/008—Manufacturing resonators
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Abstract
The application discloses a resonator, a filter and a metallization method for ceramics, wherein copper replaces silver to serve as a conducting layer on the surface of the ceramics, so that the process cost is greatly reduced, and meanwhile, the metallization method is simple in process and easy to operate, and the process production efficiency is greatly improved. Meanwhile, the thickness consistency of the silver layer can be well controlled by the PVD vacuum coating process, the surface density of the silver layer is high, the copper layer can be effectively protected from being oxidized only by a small amount of silver, the PVD vacuum coating process has high-temperature resistance and high-temperature durability, ageing resistance is high, and meanwhile, the production cost is saved. In addition, the conductivity of the metalized ceramic can be higher than 3.5 x 10 by limiting the thickness of the copper layer7S/m, and the binding force of the plating layer is more than 20N/mm2Improve the metallization of ceramicsThe latter dielectric properties.
Description
Technical Field
The present application relates to the field of metallization process technology for communication components, and more particularly, to a resonator and a filter using ceramic as a dielectric material and a corresponding metallization method.
Background
Resonators and filters, which are important communication elements, particularly, resonators and filters having ceramics as a dielectric material, have been mainstream products by virtue of excellent characteristics. The resonators and filters made of ceramic materials need to be metallized on the surfaces of ceramics, and the existing metallization method generally adopts high-temperature sintering after coating conductive silver paste, so that a conductive silver layer is formed on the surfaces of the ceramics, and silver is used as a noble metal, so that the metallization method has high cost, and the production efficiency of the metallization process is low due to the fact that the process steps are complex. In addition, with the continuous development of the communication industry, the performance requirements of the resonator and the filter are also continuously improved, and particularly, the performance of the resonator and the filter is more important in a high-temperature environment. The metallization process has a more tangential influence on the performance of the metallized resonator and the metallized filter. Therefore, a metallization method that can improve the performance of the resonator and the filter and has lower cost and higher production efficiency is needed.
Disclosure of Invention
The application provides a resonator, a filter and a metallization method for ceramics, which are used for solving the technical problems of high cost, low efficiency, poor dielectric property of the metallized ceramics and poor high temperature resistance of the existing ceramic metallization.
In view of the above, the first aspect of the present application provides a metallization method for ceramics, comprising the steps of:
the method comprises the following steps: coating conductive copper paste on the outer surface of the ceramic to form a copper layer wet film with uniform thickness, then, placing the ceramic in a nitrogen environment for drying, placing the dried ceramic in a sintering furnace for sintering, and cooling to room temperature after sintering, wherein the thickness of the copper layer is 6-30 mu m;
step two: and plating silver on the outer surface of the copper layer by adopting a PVD vacuum coating process to form a silver layer with uniform thickness, wherein the thickness of the silver layer is 0.05-1 um.
Preferably, the drying in the first step specifically includes: and (3) drying the ceramic in a nitrogen oven at the temperature of 130-160 ℃ for 13-19 minutes.
Preferably, the sintering step in the first step further comprises: the maximum sintering temperature is 920-960 ℃, and the corresponding sintering time is 10-30 minutes.
Preferably, the sintering step in the first step further comprises: and when the sintering temperature is less than 450 ℃, introducing oxidizing atmosphere gas into the sintering furnace.
Preferably, the sintering step in the first step further comprises: and when the sintering temperature reaches 450-650 ℃, introducing nitrogen into the sintering furnace.
Preferably, the sintering step in the first step further comprises: and when the sintering temperature reaches above 650 ℃, introducing a reducing atmosphere gas into the sintering furnace.
Preferably, the sintering step in the first step further comprises: when the sintering temperature is less than 450 ℃, the heating rate is less than 30 ℃/min; when the sintering temperature is more than 450 ℃, the heating rate is less than 40 ℃/min.
Preferably, the step two of plating silver on the outer surface of the copper layer by using a PVD vacuum plating process and forming a silver layer having a uniform thickness specifically includes: and (2) putting the ceramic with the copper layer on the surface obtained in the step one into PVD vacuum coating equipment for silver plating, wherein the preset vacuum degree of the PVD vacuum coating equipment is 0.08Mpa, the preset voltage is 35KV, and the coating time is 2-30 minutes.
In a second aspect, the present application provides a resonator, the dielectric material of the resonator is ceramic, and the outer surface of the ceramic is metalized and forms a metal layer by the above-mentioned metallization method for the resonator and the filter.
In a third aspect, a ceramic is used as a dielectric material of the filter, and the outer surface of the ceramic is metalized and formed with a metal layer by the above-mentioned metallization method for the resonator and the filter.
According to the technical scheme, the embodiment of the application has the following advantages:
the embodiment of the application uses copper to replace silver as a conductive layer on the surface of the ceramicThe process cost is greatly reduced, and meanwhile, the metallization method is simple in process and easy to operate, and the process production efficiency is greatly improved. Meanwhile, the thickness consistency of the silver layer can be well controlled by the PVD vacuum coating process, the surface density of the silver layer is high, the copper layer can be effectively protected from being oxidized only by a small amount of silver, the conductivity and the binding force can be measured in 85/85 high-temperature standard detection environment for 500 hours and 1000 hours, the high conductivity and the binding force can be still kept, the high-temperature resistance is realized, the high-temperature durability is good, the anti-aging capability is realized, and meanwhile, the production cost is also saved. In addition, the conductivity of the metalized ceramic can be higher than 3.5 x 10 by limiting the thickness of the copper layer7S/m, and the binding force of the plating layer is more than 20N/mm2The dielectric property of the ceramic after metallization is improved.
Drawings
Fig. 1 is a flowchart of a metallization method for ceramic according to an embodiment of the present disclosure.
Detailed Description
In order to make the technical solutions of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In order to facilitate understanding, please refer to fig. 1, an embodiment of a metallization method for a ceramic provided in the present application includes the following steps:
s101: coating the conductive copper paste on the outer surface of the ceramic to form a copper layer wet film with uniform thickness, then, placing the ceramic in a nitrogen environment for drying, placing the dried ceramic in a sintering furnace for sintering, and cooling to room temperature after sintering, wherein the thickness of the copper layer is 6-30 mu m;
it should be noted that, in this embodiment, the coating manner is screen printing, spraying or dip coating, and when the screen printing manner is adopted, the viscosity of the conductive copper paste is 100 to 500Pa · s, so as to ensure the uniformity and wettability of the copper layer after screen printing; when a spraying mode is adopted, the viscosity of the conductive copper paste is 0.001-0.01 Pa.s, so that the atomization effect of the copper paste and the uniformity of a sprayed copper layer are ensured; when a dip coating mode is adopted, the thickness uniformity of the copper layer after dip coating can be well ensured due to the fact that the conductive copper paste is 10-16 Pa-s.
S102: and plating silver on the outer surface of the copper layer by adopting a PVD vacuum coating process to form a silver layer with uniform thickness, wherein the thickness of the silver layer is 0.05-1 um.
It should be noted that, in this embodiment, the copper replaces the silver to be used as the conductive layer on the ceramic surface, so that the process cost is greatly reduced, and meanwhile, the metallization method is simple in process and easy to operate, so that the process production efficiency is greatly improved. In addition, the conductivity of the metalized ceramic can be higher than 3.5 x 10 by limiting the thickness of the copper layer7S/m, and the binding force of the plating layer is more than 20N/mm2The performance of the ceramic after metallization is improved. Specifically, see table 1 for some examples, table 1 shows that the measured conductivity and bonding force of the copper layer can be changed within the thickness range of 6-30 um in this example under the condition that the thickness of the silver layer is the same.
| Examples of the invention | Copper layer thickness (um) | Thickness of silver layer (um) | Conductivity (S/m) | Binding force ((N/mm)2) |
| 1 | 6 | 0.05 | 3.5*107 | 20 |
| 2 | 15 | 0.05 | 3.8*107 | 24 |
| 3 | 25 | 0.05 | 3.8*107 | 26 |
TABLE 1
As can be seen from Table 1, the conductivity of the copper layer was still 3.5 x 10 at a thickness of 6um7S/m, and the binding force can be 20N/mm2And has better performance. Under the condition that the silver layer is not changed, the conductivity and the bonding force of the copper layer are improved along with the increase of the thickness of the copper layer, and the conductivity of the copper layer is not improved any more and the bonding force is still improved when the thickness of the copper layer is more than 15 mu m.
In addition, in the embodiment, the thickness consistency of the silver layer can be well controlled by adopting the PVD vacuum coating process, the surface density of the silver layer is higher, the copper layer can be effectively protected from being oxidized only by a very small amount of silver, the production cost is also saved, and the electrical conductivity of the metallized ceramic is still higher than 3.5 x 10 after being tested for 500 hours in 85/85 high-temperature standard detection environment7S/m, the binding force is more than 20N/mm2And tested in 85/85 high temperature standard test environment for 1000 hours, the conductivity is higher than 3.2 x 107S/m, the binding force is more than 14N/mm2. The silver layer has high temperature resistance and high durability, and for details, see table 2 for some examples, table 2 shows the results of measuring the conductivity and the bonding force in 85/85 high temperature standard detection environment for 500 hours and 1000 hours, respectively, when the thickness of the silver layer is changed within the range of 0.05-1 um under the same copper layer thickness.
TABLE 2
As shown in Table 2, in examples 1-3, the conductivity of the silver layer with the same thickness of the copper layer can still reach 3.5 x 10 after being tested in 85/85 high temperature standard testing environment for 500 hours as the thickness of the silver layer increases7S/m is more than or equal to 18N/mm, and the binding force can reach2The above; after the test is carried out for 1000 hours under 85/85 high-temperature standard detection environment, although the conductivity of the conductive material is reduced, the conductivity can still reach 3.2 x 107S/m is more than or equal to 14N/mm, and the binding force can also reach2The above. Meanwhile, when the silver layer reaches 1um, the high-temperature resistance and durability of the silver coating are better. In addition, the comparison scheme in table 2 is a result of coating the silver layer by using a thick film process and determining the silver layer, and compared with example 3, it can be seen that, when the thickness of the copper layer is the same as that of the silver layer, compared with the comparison scheme, the PVD vacuum coating process in the embodiment for silver coating can ensure that the conductivity and the bonding force of the metallized ceramic are better, and the metallized ceramic has better high-temperature durability and aging resistance.
The above is one embodiment of a metallization method for ceramics provided herein, and the following is another embodiment of a metallization method for ceramics provided herein.
The embodiment provides a metallization method for ceramics, which comprises the following steps:
s201: coating the conductive copper paste on the outer surface of the ceramic to form a copper layer wet film with uniform thickness, then, placing the ceramic in a nitrogen environment for drying, placing the dried ceramic in a sintering furnace for sintering, and cooling to room temperature after sintering, wherein the thickness of the copper layer is 6-30 mu m;
it should be noted that, in this embodiment, the coating manner is screen printing, spraying or dip coating, and when the screen printing manner is adopted, the viscosity of the conductive copper paste is 100 to 500Pa · s, so as to ensure the uniformity and wettability of the copper layer after screen printing; when a spraying mode is adopted, the viscosity of the conductive copper paste is 0.001-0.01 Pa.s, so that the atomization effect of the copper paste and the uniformity of a sprayed copper layer are ensured; when a dip coating mode is adopted, the thickness uniformity of the copper layer after dip coating can be well ensured due to the fact that the conductive copper paste is 10-16 Pa-s.
S202: and plating silver on the outer surface of the copper layer by adopting a PVD vacuum coating process to form a silver layer with uniform thickness, wherein the thickness of the silver layer is 0.05-1 um.
Further, the step of drying in step S201 specifically includes: and (3) drying the ceramic in a nitrogen oven at the temperature of 130-160 ℃ for 13-19 minutes.
It should be noted that, the drying temperature is 130-160 ℃, the drying time is 13-19 minutes, the low-boiling-point organic solvent in the conductive copper paste can be completely volatilized, and the copper powder in the conductive copper paste is prevented from being oxidized.
Further, the step of sintering in step S201 further includes: the maximum sintering temperature is 920-960 ℃, and the corresponding sintering time is 10-30 minutes.
Further, the step of sintering in step S201 further includes: and when the sintering temperature is less than 450 ℃, introducing oxidizing atmosphere gas into the sintering furnace.
Further, the step of sintering in step S201 further includes: when the sintering temperature reaches 450-650 ℃, nitrogen is introduced into the sintering furnace.
Further, the step of sintering in step S201 further includes: when the sintering temperature reaches above 650 ℃, introducing reducing atmosphere gas into the sintering furnace.
Further, the step of sintering in step S201 further includes: when the sintering temperature is less than 450 ℃, the heating rate is less than 30 ℃/min; when the sintering temperature is more than 450 ℃, the heating rate is less than 40 ℃/min.
Further, the step of plating silver on the outer surface of the copper layer by using a PVD vacuum plating process and forming a silver layer having a uniform thickness in step S202 specifically includes: and (3) putting the ceramic with the copper layer on the surface obtained in the step one into PVD vacuum coating equipment for silver plating, wherein the preset vacuum degree of the PVD vacuum coating equipment is 0.08Mpa, the preset voltage is 35KV, and the coating time is 2-30 minutes.
The above is another embodiment of a metallization method for a ceramic provided herein, and the following is an embodiment of a resonator provided herein.
In the resonator provided by the embodiment of the application, the resonator is made of ceramic, and the outer surface of the ceramic is metalized by the metallization method for the resonator and the filter of the embodiment and a metal layer is formed.
The above is an embodiment of a resonator provided in the present application, and the following is an embodiment of a filter provided in the present application.
In the filter provided by the application, the ceramic is adopted, and the outer surface of the ceramic is metalized by the metallization method for the resonator and the filter of the embodiment and a metal layer is formed.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit is merely a logical division, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (10)
1. A method for metallizing a ceramic, comprising the steps of:
the method comprises the following steps: coating conductive copper paste on the outer surface of the ceramic to form a copper layer wet film with uniform thickness, then, placing the ceramic in a nitrogen environment for drying, placing the dried ceramic in a sintering furnace for sintering, and cooling to room temperature after sintering, wherein the thickness of the copper layer is 6-30 mu m;
step two: and plating silver on the outer surface of the copper layer by adopting a PVD vacuum coating process to form a silver layer with uniform thickness, wherein the thickness of the silver layer is 0.05-1 um.
2. The metallization method for ceramics according to claim 1, wherein the step of drying in the first step specifically comprises: and (3) drying the ceramic in a nitrogen oven at the temperature of 130-160 ℃ for 13-19 minutes.
3. The metallization method for ceramics according to claim 1, wherein the step of sintering in the first step further comprises: the maximum sintering temperature is 920-960 ℃, and the corresponding sintering time is 10-30 minutes.
4. The metallization method for ceramics according to claim 3, wherein the step of sintering in the first step further comprises: and when the sintering temperature is less than 450 ℃, introducing oxidizing atmosphere gas into the sintering furnace.
5. The metallization method for ceramics according to claim 4, wherein the step of sintering in the first step further comprises: and when the sintering temperature reaches 450-650 ℃, introducing nitrogen into the sintering furnace.
6. The metallization method for ceramics according to claim 5, wherein the step of sintering in the first step further comprises: and when the sintering temperature reaches above 650 ℃, introducing a reducing atmosphere gas into the sintering furnace.
7. The metallization method for ceramics according to claim 1 or 6, wherein the step of sintering in the first step further comprises: when the sintering temperature is less than 450 ℃, the heating rate is less than 30 ℃/min; when the sintering temperature is more than 450 ℃, the heating rate is less than 40 ℃/min.
8. The method according to claim 1, wherein the step of plating silver on the outer surface of the copper layer by a PVD vacuum plating process and forming a silver layer with a uniform thickness in the second step comprises: and (2) putting the ceramic with the copper layer on the surface obtained in the step one into PVD vacuum coating equipment for silver plating, wherein the preset vacuum degree of the PVD vacuum coating equipment is 0.08Mpa, the preset voltage is 35KV, and the coating time is 2-30 minutes.
9. A resonator, characterized in that the dielectric material of the resonator adopts ceramic, the outer surface of the ceramic is metallized and forms a metal layer by the metallization method for the resonator and the filter as claimed in any one of claims 1 to 8.
10. A filter, characterized in that the dielectric material of the filter is ceramic, the outer surface of the ceramic is metalized and forms a metal layer by the metallization method for the resonator and the filter as claimed in any one of claims 1 to 8.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635949A (en) * | 2020-12-14 | 2021-04-09 | 江苏宝利金材科技有限公司 | Method for metallizing surface of ceramic filter |
| CN112701436A (en) * | 2020-12-04 | 2021-04-23 | 核工业西南物理研究院 | Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1116253A (en) * | 1994-01-31 | 1996-02-07 | 松下电工株式会社 | Method of coating a copper film on a ceramic substrate |
| JP2003231972A (en) * | 2002-02-13 | 2003-08-19 | Murata Mfg Co Ltd | Method for manufacturing electronic parts, and electronic parts |
| JP2006080880A (en) * | 2004-09-09 | 2006-03-23 | Matsushita Electric Works Ltd | Dielectric laminated filter and its manufacturing method |
| CN101135051A (en) * | 2006-08-29 | 2008-03-05 | 周文俊 | Metal or ceramic base material metallization treating method |
| CN102695370A (en) * | 2012-06-18 | 2012-09-26 | 惠州市富济电子材料有限公司 | Preparation method of ceramic circuit board |
| CN103266303A (en) * | 2013-05-07 | 2013-08-28 | 苏州奕光薄膜科技有限公司 | Electronic device adopting magnetron sputtering to plate film, and manufacturing method thereof |
| CN104240841A (en) * | 2013-06-14 | 2014-12-24 | 中国振华集团云科电子有限公司 | Base metal conductor paste preparation method |
| CN104291801A (en) * | 2014-09-23 | 2015-01-21 | 谭国华 | Far infrared ceramic material and manufacturing process thereof |
| CN204659170U (en) * | 2015-03-25 | 2015-09-23 | 苏州涂冠镀膜科技有限公司 | A kind of conductive silver paste screen printing screens |
| US9179537B2 (en) * | 2012-12-13 | 2015-11-03 | Apple Inc. | Methods for forming metallized dielectric structures |
| CN105048052A (en) * | 2015-07-08 | 2015-11-11 | 广东国华新材料科技股份有限公司 | Tunable dielectric resonator and dielectric filter |
| CN105367133A (en) * | 2015-11-27 | 2016-03-02 | 常熟市银洋陶瓷器件有限公司 | Preparation process suitable for coating silver on LED ceramic support surface |
| CN105367128A (en) * | 2015-11-27 | 2016-03-02 | 常熟市银洋陶瓷器件有限公司 | Preparation process suitable for metallization by bonding copper on aluminium oxide ceramic surface |
| WO2018039112A1 (en) * | 2016-08-23 | 2018-03-01 | Corning Incorporated | Rapid heating rate article and microwave methods |
| CN108601234A (en) * | 2018-04-04 | 2018-09-28 | 东莞市武华新材料有限公司 | A kind of ceramic surface metal layer preparation method |
-
2020
- 2020-08-18 CN CN202010831505.8A patent/CN111864330B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1116253A (en) * | 1994-01-31 | 1996-02-07 | 松下电工株式会社 | Method of coating a copper film on a ceramic substrate |
| JP2003231972A (en) * | 2002-02-13 | 2003-08-19 | Murata Mfg Co Ltd | Method for manufacturing electronic parts, and electronic parts |
| JP2006080880A (en) * | 2004-09-09 | 2006-03-23 | Matsushita Electric Works Ltd | Dielectric laminated filter and its manufacturing method |
| CN101135051A (en) * | 2006-08-29 | 2008-03-05 | 周文俊 | Metal or ceramic base material metallization treating method |
| CN102695370A (en) * | 2012-06-18 | 2012-09-26 | 惠州市富济电子材料有限公司 | Preparation method of ceramic circuit board |
| US9179537B2 (en) * | 2012-12-13 | 2015-11-03 | Apple Inc. | Methods for forming metallized dielectric structures |
| CN103266303A (en) * | 2013-05-07 | 2013-08-28 | 苏州奕光薄膜科技有限公司 | Electronic device adopting magnetron sputtering to plate film, and manufacturing method thereof |
| CN104240841A (en) * | 2013-06-14 | 2014-12-24 | 中国振华集团云科电子有限公司 | Base metal conductor paste preparation method |
| CN104291801A (en) * | 2014-09-23 | 2015-01-21 | 谭国华 | Far infrared ceramic material and manufacturing process thereof |
| CN204659170U (en) * | 2015-03-25 | 2015-09-23 | 苏州涂冠镀膜科技有限公司 | A kind of conductive silver paste screen printing screens |
| CN105048052A (en) * | 2015-07-08 | 2015-11-11 | 广东国华新材料科技股份有限公司 | Tunable dielectric resonator and dielectric filter |
| CN105367133A (en) * | 2015-11-27 | 2016-03-02 | 常熟市银洋陶瓷器件有限公司 | Preparation process suitable for coating silver on LED ceramic support surface |
| CN105367128A (en) * | 2015-11-27 | 2016-03-02 | 常熟市银洋陶瓷器件有限公司 | Preparation process suitable for metallization by bonding copper on aluminium oxide ceramic surface |
| WO2018039112A1 (en) * | 2016-08-23 | 2018-03-01 | Corning Incorporated | Rapid heating rate article and microwave methods |
| CN108601234A (en) * | 2018-04-04 | 2018-09-28 | 东莞市武华新材料有限公司 | A kind of ceramic surface metal layer preparation method |
Non-Patent Citations (2)
| Title |
|---|
| 秦典成等: ""陶瓷金属化研究现状及发展趋势"", 《中国陶瓷工业》 * |
| 赵时璐: "《多弧离子镀Ti-Al-Zi-Gr-N系复合硬质膜》", 28 February 2013, 冶金工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701436A (en) * | 2020-12-04 | 2021-04-23 | 核工业西南物理研究院 | Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes |
| CN112701436B (en) * | 2020-12-04 | 2021-10-22 | 核工业西南物理研究院 | Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes |
| CN112635949A (en) * | 2020-12-14 | 2021-04-09 | 江苏宝利金材科技有限公司 | Method for metallizing surface of ceramic filter |
| CN112635949B (en) * | 2020-12-14 | 2022-04-01 | 江苏宝利金材科技有限公司 | Method for metallizing surface of ceramic filter |
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