CN105229877A - Esd protection device - Google Patents
Esd protection device Download PDFInfo
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- CN105229877A CN105229877A CN201480029093.9A CN201480029093A CN105229877A CN 105229877 A CN105229877 A CN 105229877A CN 201480029093 A CN201480029093 A CN 201480029093A CN 105229877 A CN105229877 A CN 105229877A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T1/00—Details of spark gaps
- H01T1/20—Means for starting arc or facilitating ignition of spark gap
- H01T1/22—Means for starting arc or facilitating ignition of spark gap by the shape or the composition of the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T2/00—Spark gaps comprising auxiliary triggering means
- H01T2/02—Spark gaps comprising auxiliary triggering means comprising a trigger electrode or an auxiliary spark gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention provides the Esd protection device that discharge ionization voltage can be made effectively to reduce.Esd protection device (1) comprising: substrate (2); First, second sparking electrode (3,4), this first, second sparking electrode (3,4) is arranged on substrate (2), and front end is mutually relative across interval; And high dielectric constant layer (7), the relative dielectric constant of this high dielectric constant layer (7) is higher than substrate (2).
Description
Technical field
The present invention relates to for making electronic circuit by the Esd protection device of electrostatic influence, particularly relating to sparking electrode across the relative Esd protection device in gap.
Background technology
In following patent documentation 1, disclose the Esd protection device being provided with first, second sparking electrode in ceramic multi-layer baseplate.Auxiliary electrode is set, is connected with first, second sparking electrode.Not there is the conductive material of the inorganic material of conductivity by scatter coated and form auxiliary electrode.
In addition, in patent documentation 2 hereafter, disclose the patch-type surge absorber possessing the sparking electrode be mutually oppositely arranged across discharging gap in insulative substrate.The dielectric layer with the relative dielectric constant larger than the relative dielectric constant of insulative substrate is set between sparking electrode and insulative substrate.In addition, describe when forming insulative substrate itself by above-mentioned dielectric layer, electrostatic capacitance increases, and is difficult to the content used at high-frequency circuit.
Prior art document
Patent documentation
Patent documentation 1:WO2009/098944
Patent documentation 2: Japanese Patent Laid-Open 2002-43021 publication
Summary of the invention
Invent technical problem to be solved
The Esd protection device recorded in patent documentation 1, although utilize auxiliary electrode to achieve the lower voltage of discharge ionization voltage, but still insufficient.
On the other hand, in the patch-type surge absorber that patent documentation 2 is recorded, lower voltage is realized by arranging above-mentioned dielectric layer.In the invention of patent documentation 2, be increased to object with what prevent electrostatic capacitance, dielectric layer is not arranged in discharging gap.That is, dielectric layer is only arranged on immediately below the sparking electrode in insulative substrate.Thus, in gas discharge or creeping discharge, creeping discharge is difficult to be fully utilized.Thus, be difficult to make discharge ionization voltage fully by lower voltage.
The object of the present invention is to provide a kind of Esd protection device, discharge ionization voltage can be made effectively to reduce.
The technical scheme that technical solution problem adopts
The Esd protection device that the present invention relates to comprises: substrate; First, second sparking electrode, this first, second sparking electrode is arranged on the substrate, relative across gap; And high dielectric constant layer, the relative dielectric constant of this high dielectric constant layer is higher than described substrate.Described high dielectric constant layer is set to directly or indirectly connect described first sparking electrode and described second sparking electrode.
The Esd protection device that the present invention relates to, preferably, also comprises electric discharge auxiliary electrode, and this electric discharge auxiliary electrode is set to connect described first sparking electrode and described second sparking electrode, promotes the electric discharge between first, second sparking electrode.
In a certain particular aspects of Esd protection device of the present invention, described electric discharge auxiliary electrode comprises the electroconductive particle covering the material without conductivity.
In another particular aspects of Esd protection device of the present invention, described high dielectric constant layer is configured to be layered in described electric discharge auxiliary electrode.
In the Esd protection device that the present invention relates to, preferably, described high dielectric constant layer is arranged at least one party in above or below described gap portion.
In the Esd protection device that the present invention relates to, preferably, described gap is provided with the part of relative dielectric constant lower than described substrate.Relative dielectric constant can be cavity lower than the part of described substrate.In addition, relative dielectric constant can be formed by the material of relative dielectric constant lower than substrate lower than the part of described substrate.Preferably, adopt resin as the described material of relative dielectric constant lower than substrate.
The Esd protection device that the present invention relates to, preferably, also comprise electrode behind, this behind electrode is set to overlap with the gap between first, second sparking electrode described across a part for described substrate.
Preferably, comprise first, second outer electrode, this first, second outer electrode is arranged at described substrate, and be electrically connected with first, second sparking electrode separately, described behind electrode is electrically connected with in first, second outer electrode.Wherein, electrode can be suspended conductor behind.
In the Esd protection device that the present invention relates to, preferably, described behind electrode comprises: metal, and compared with described substrate the material of high-k.
In the Esd protection device that the present invention relates to, first, second sparking electrode described can be arranged on the outer surface of described substrate.
In addition, in the Esd protection device that the present invention relates to, the front end of first, second sparking electrode described can be arranged in described substrate, and described gap can be positioned at substrate.
Invention effect
According to the Esd protection device that the present invention relates to, because the high dielectric constant layer of relative dielectric constant higher than substrate is directly or indirectly connected with first, second sparking electrode, therefore discharge ionization voltage can be reduced.Thus, in electronic circuit etc., more effectively can realize electrostatic defending.
Accompanying drawing explanation
Fig. 1 (a) and Fig. 1 (b) is the front section view of the Esd protection device that the first execution mode of the present invention relates to and amplifies front section view for illustration of the part section of its key component.
Fig. 2 is the schematic plan view of first, second sparking electrode in the Esd protection device related to for illustration of the first execution mode of the present invention, electric discharge auxiliary electrode and the position relationship of electrode behind.
Fig. 3 (a) and Fig. 3 (b) is the front section view of the Esd protection device that the second execution mode of the present invention relates to and represents that the part section of its key component amplifies front section view.
Fig. 4 is the schematic plan view of the position relationship representing first, second sparking electrode in the second execution mode of the present invention, electric discharge auxiliary electrode and behind electrode.
Fig. 5 is the schematic plan view for illustration of first, second sparking electrode, electric discharge auxiliary electrode and the behind variation of the position relationship of electrode.
Fig. 6 is the schematic plan view for illustration of first, second sparking electrode, electric discharge auxiliary electrode and behind another variation of the position relationship of electrode.
Fig. 7 is the front section view of the Esd protection device that the 3rd execution mode of the present invention relates to.
Fig. 8 is the schematic plan view of first, second sparking electrode in the Esd protection device representing the 3rd execution mode of the present invention, electric discharge auxiliary electrode and the position relationship of electrode behind.
Fig. 9 is the front section view of the Esd protection device that the 4th execution mode of the present invention relates to.
Figure 10 is the schematic plan view of first, second sparking electrode in the Esd protection device representing the 4th execution mode of the present invention, electric discharge auxiliary electrode and the position relationship of electrode behind.
Figure 11 is the front section view of the Esd protection device that the 5th execution mode of the present invention relates to.
Figure 12 is the front section view of the Esd protection device that the 6th execution mode of the present invention relates to.
Figure 13 is the front section view of the Esd protection device that the 7th execution mode of the present invention relates to.
Figure 14 is the front section view of the Esd protection device that the 8th execution mode of the present invention relates to.
Embodiment
Below, with reference to accompanying drawing, by being described the specific embodiment of the present invention, carry out clear and definite the present invention.
Fig. 1 (a) and Fig. 1 (b) is the front section view of the Esd protection device that the first execution mode of the present invention relates to and represents the part section front section view of its key component.
Esd protection device 1 has substrate 2.Substrate 2 is made up of suitable Ins. ulative material.In present embodiment, substrate 2 is made up of ceramic multi-layer baseplate, adopts and comprises Ba, Al and Si BAS material as main component.Wherein, also the low-temperature sintered ceramicss such as glass ceramics (LTCC) can be utilized.In addition, aluminium nitride or aluminium oxide etc. also can be utilized with the pottery of high temperature sintering (HTCC).Further, the also magnetic such as available iron oxysome pottery.Such as, when using above-mentioned BAS material on substrate, the relative dielectric constant of substrate 2 is about 6.
In addition, substrate 2 also can be formed by Ins. ulative material such as the resins beyond pottery.The upper surface 2a of substrate 2 is formed the first sparking electrode 3 and the second sparking electrode 4.In addition, arranging electric discharge auxiliary electrode 5 at the lower surface of first, second sparking electrode 3,4 makes the front end of first, second sparking electrode 3,4 be interconnected.
Electric discharge auxiliary electrode 5, in the upper surface 2a of substrate 2, is set to connection first sparking electrode 3 and the second sparking electrode 4.As shown in Figure 2, when overlooking, electric discharge auxiliary electrode 5 is arranged in the region of the mutually relative gap area in the front end that comprises first, second sparking electrode 3,4.
Electric discharge auxiliary electrode 5 covers the electroconductive particle 6 of the material without conductivity at the upper surface 2a of substrate 2 by dispersion and is formed.More specifically, by the thickener of coating containing such a electroconductive particle, carry out calcining and being formed.In this situation, electroconductive particle 6 that contain in thickener, that cover the material without conductivity diffuses to the superficial layer of substrate 2 from the upper surface 2a of substrate 2.As a result, above-mentioned electric discharge auxiliary electrode is formed.
Electric discharge auxiliary electrode 5 plays the effect of discharging between the front end of promotion first sparking electrode 3 and the front end of the second sparking electrode 4.
The above-mentioned material covering the electroconductive particle of the material without conductivity of formation is not particularly limited.As the material without conductivity, there are insulating ceramics, the glass etc. such as aluminium oxide.In addition, the material forming electroconductive particle is not particularly limited, suitably can uses metal etc.As such a metal, preferably use copper or take copper as the copper series alloy of main component.Wherein, other metals such as silver, aluminium, molybdenum, tungsten can also be used or based on the alloy of other metal.
Further, in electric discharge auxiliary electrode 5, except covering the electroconductive particle of the material without conductivity, also semiconductive ceramic particle can be added.As the particle that such a semiconductive ceramic particle can utilize SiC, TiC etc. to form.
In present embodiment, high dielectric constant layer 7 is set in the below of electric discharge auxiliary electrode 5.High dielectric constant layer 7 is the layers formed higher than the material of substrate 2 by relative dielectric constant.The material that above-mentioned relative dielectric constant is high, preferably, has the relative dielectric constant of more than the twice of the material forming substrate 2, and preferably has the relative dielectric constant of less than 10000.If within the scope of this, then the relative dielectric constant difference between substrate 2 and high dielectric constant layer 7 is enough large.Thus, electric field concentration effect hereinafter described and charge effects can effectively be observed.Therefore, effectively discharge ionization voltage can be reduced further.
As forming the material of high dielectric constant layer 7, as long as relative dielectric constant is not then particularly limited higher than the material of substrate 2.As the material forming high dielectric constant layer 7, be suitable for the ceramic material adopting relative dielectric constant higher than substrate 2.As such a ceramic material, there are barium titanate, calcium zirconate, calcium titanate, strontium titanates, magnesium titanate etc.The relative dielectric constant of barium titanate, calcium zirconate, calcium titanate, strontium titanates, magnesium titanate etc. more than 30, the level of less than 10000.
High dielectric constant layer 7 is set to directly or indirectly connect the front end of above-mentioned first sparking electrode 3 and the front end of above-mentioned second sparking electrode 4.In present embodiment, high dielectric constant layer 7 is layered in above-mentioned electric discharge auxiliary electrode 5.Thus, high dielectric constant layer 7 is set to indirectly connect the front end of above-mentioned first sparking electrode and the front end of above-mentioned second sparking electrode.Wherein, high dielectric constant layer 7 also via electric discharge auxiliary electrode 5, directly can not connect the front end of the first sparking electrode 3 and the front end of the second sparking electrode 4.In addition, in present embodiment, high dielectric constant layer 7 is identical with electric discharge auxiliary electrode shape, and is arranged on immediately below electric discharge auxiliary electrode 5.Thus, when overlooking, high dielectric constant layer 7 is arranged on the position identical with electric discharge auxiliary electrode 5 as shown in Figure 2.
As shown in Fig. 1 (a) and (b), the gap portion mutually relative in the front end of first, second sparking electrode 3,4 forms resin bed 8.Resin bed 8 is made up of synthetic resin, and its relative dielectric constant is lower than the relative dielectric constant of substrate 2.As the resin forming resin bed 8 like this, silicones etc. can be enumerated.
In addition, in present embodiment, after the above-mentioned sparking electrode 3,4 of formation, form above-mentioned resin bed 8.Thus, resin bed 8 is formed by making the resin of formation resin bed 8 be embedded in above-mentioned gap.Thus, in present embodiment, the upper surface of resin bed 8 is coplanar with the upper surface of first, second sparking electrode 3,4.
In addition, the second resin bed 9 is formed to cover above-mentioned first, second sparking electrode 3,4 and resin bed 8.Second resin bed 9 is made up of the resin of relative dielectric constant higher than the first resin bed 8.As such a resin, epoxy resin etc. can be enumerated.But in present embodiment, first, second resin bed 8,9 also not necessarily must be arranged.Such as, cavity also can be set and replace the first resin bed 8.In addition, first, second resin bed 8,9 also can be formed by same material.
As shown in Fig. 1 (a), form first, second outer electrode 10,11, be electrically connected with first, second sparking electrode 3,4.First, second outer electrode 10,11 is electrically connected with first, second sparking electrode 3,4 respectively at the upper surface of substrate 2.First, second outer electrode 10,11 arrives lower surface through the side of substrate 2.First, second outer electrode 10,11 is made up of suitable metal or alloy.
In substrate 2, form electrode 12 behind.As shown in Figure 2, when overlooking, behind electrode 12 is arranged on the position with above-mentioned first, second sparking electrode 3,4 relative gap portion overlaps.
Electrode 12 is relative with first, second sparking electrode 3,4 and high dielectric constant layer 7 across the layer of a part for substrate 2 behind.In present embodiment, substrate 2 is made up of ceramic multi-layer baseplate.Thus, electrode 12 can be formed in the manufacturing process of substrate 2 behind.
Electrode 12 can utilize suitable conductive material to be formed behind.Preferably, behind electrode 12 is based on metal.As such a metal material, the Metal Phase metal together used with first, second sparking electrode 3,4 can be adopted.
Esd protection device 1 possesses electric discharge auxiliary electrode 5 and is layered in the high dielectric constant layer 7 of this electric discharge auxiliary electrode 5, to be interconnected the front end of first, second sparking electrode 3,4.Therefore, effectively discharge ionization voltage can be reduced.This owing to arranging the different material of dielectric constant near first, second sparking electrode 3,4.That is, at the near surface of first, second sparking electrode 3,4, there is the material that resin bed 8, the electric discharge dielectric constant such as auxiliary electrode 6, high dielectric constant layer 7 are different.As a result, on the surface of first, second sparking electrode 3,4, especially front end place promotes that electric field is concentrated.Thus, utilize electric field to concentrate, promote that the electronics forming electric discharge basic point moves.As a result, can think that discharge ionization voltage reduces.
In addition, in present embodiment, utilize and above-mentioned high dielectric constant layer 7 is set below above-mentioned electric discharge auxiliary electrode 5, also effectively reduce discharge ionization voltage.This is because concentrate because the existence of high dielectric constant layer 7 facilitates electric field, facilitate the creeping discharge produced at electric discharge auxiliary electrode 5.
In addition, can think that the electrostatic capacitance between relative first, second sparking electrode 3,4 also gets a promotion, promote charge effects during electric discharge thus.Thus, can think and utilize the promotion of this charge effects to also reduce discharge ionization voltage.In addition, present inventor confirms, and the Esd protection device in the present invention, owing to excessively not increasing electrostatic capacitance, therefore also can use in high-frequency circuit.
Further, owing to being provided with above-mentioned behind electrode 12, therefore further promoting electric field and concentrate, also reduce further discharge ionization voltage thus.
Wherein, in the present invention, above-mentioned electric discharge auxiliary electrode 5 and behind electrode 12 not necessarily must be set.Such as, the porous layer of material, metal or the semiconductor etc. having disperseed to have nonlinearity voltage characteristic also can be set, replace the auxiliary electrode 5 that discharges.
In addition, preferably, expect that electrode 12 is electrically connected with the first outer electrode 10 or the second outer electrode 11 behind.Thus, electrostatic capacitance is formed at sparking electrode 3 or between sparking electrode 4 and behind electrode 12.This electrostatic capacitance increases further due to the existence of high dielectric constant layer 7.Thus, charge effects during electric discharge can be improved further, discharge ionization voltage can be reduced further.Present inventor confirms further, in this situation, does not excessively increase electrostatic capacitance, also can use in high-frequency circuit.
In addition, can make the heat produced by electric discharge, electrode 12 discharges rapidly to the outer electrode 10 be electrically connected with behind electrode 12 or outer electrode 11 from behind.Thus, the heat deterioration in Esd protection device 1 can be suppressed.
When manufacturing Esd protection device 1, substrate 2 can be formed according to the manufacture method of known ceramic multi-layer baseplate.In addition, the formation of electric discharge auxiliary electrode 5, high dielectric constant layer 7, first, second sparking electrode 3,4 can also easily be carried out.Thus, the numerous and diverse of manufacturing process can not be brought.
Fig. 3 (a) and (b) are the front section views of the Esd protection device 21 that the second execution mode of the present invention relates to and represent that the part section of its key component amplifies front section view.
The Esd protection device 21 of the second execution mode has substrate 22.Substrate 22 can be same with the substrate 2 with the first execution mode material formed.
First, second sparking electrode 3,4 is set in substrate 22.The front end of first, second sparking electrode 3,4 is mutually relative across gap.In addition, form electric discharge auxiliary electrode 5, be interconnected with the front end of first, second sparking electrode 3,4.First, second sparking electrode 3,4 and electric discharge auxiliary electrode 5 are formed except forming position difference in the same manner as first, second sparking electrode 3,4 of the first execution mode and the auxiliary electrode 5 that discharges.Thus, the explanation of the first execution mode is quoted.But, in present embodiment, the part mutually relative in the front end of first, second sparking electrode 3,4 arranges empty 22b.The front end of first, second sparking electrode 3,4 is exposed in this empty 22b.Thus, the gap of the front end of the first sparking electrode 3 and the front end of the second sparking electrode 4 is positioned at empty 22b.Thus, the gas being full of empty 22b is present in gap.The relative dielectric constant of gas, such as air is 1.00059.Thus, compared with the relative dielectric constant of substrate 2, the part forming above-mentioned gap is relative low-k part.
In present embodiment, also in the same manner as the first execution mode, at the stacked high dielectric constant layer 7 in below of electric discharge auxiliary electrode 5.Wherein, in present embodiment, high dielectric constant layer 7A is also set above empty 22b.High dielectric constant layer 7A is formed with the material identical with high dielectric constant layer 7.High dielectric constant layer 7A is arranged on towards on the face of the empty 22b of substrate 22.High dielectric constant layer 7A is configured to the front end being interconnected first, second sparking electrode 3,4.High dielectric constant layer 7 and high dielectric constant layer 7A at least arrange one, but in present embodiment, preferably, are both set up.
In addition, in substrate 22, electrode 12 is behind set, makes it across substrate layer and high dielectric constant layer 7 and first, second sparking electrode 3,4 relative.Electrode 12 is formed in the same manner as the behind electrode 12 of the first execution mode behind.In present embodiment, above empty 22b, also form electrode 12A behind.Electrode 12A is formed with the material same with behind electrode 12 behind.In addition, the flat shape of behind electrode 12A and position when overlooking are with electrode 12 is identical behind.That is, electrode 12A is arranged on the position of the behind electrode 12 shown in Fig. 4 behind.
First, second sparking electrode 3,4 is electrically connected with first, second outer electrode 10,11.First, second outer electrode 10,11 is set up in the same manner as the situation of the first execution mode.
In the Esd protection device 21 of the second execution mode, if electrostatic is applied between the first sparking electrode 3 and the second sparking electrode 4, then creeping discharge and these two kinds of electric discharges of gas discharge are utilized to discharge.In this situation, owing to being provided with electric discharge auxiliary electrode 5 and high dielectric constant layer 7,7A at the near surface of first, second sparking electrode 3,4, therefore also in the same manner as the situation of the first execution mode, effectively can reduce discharge ionization voltage.In addition, by arranging electrode 12,12A behind, also discharge ionization voltage can be reduced.
Further, in present embodiment, when electrode 12,12A are electrically connected with the first outer electrode 10 or the second outer electrode 11 rearward, also can reduce discharge ionization voltage further, and also can suppress heat deterioration.
From the Esd protection device 21 of the second execution mode, in the present invention, first, second sparking electrode 3,4 can be positioned at substrate 22.In addition, not only can utilizing creeping discharge, also utilizing gas discharge by arranging empty 22b.But, in present embodiment, empty 22b or electric discharge auxiliary electrode 5 not necessarily must be set.In this situation, such as, also the porous layer of material, metal or the semiconductor etc. having disperseed to have nonlinearity voltage characteristic can be set the region between first, second sparking electrode 3,4.
In addition, in the present invention, first, second sparking electrode 3,4, the position relationship of electric discharge auxiliary electrode 5 and electrode 12 is behind not limited to the position relationship shown in Fig. 2 and Fig. 4.That is, as shown in Figure 5, the first sparking electrode 3 and the second sparking electrode 4 also can be made not to be that front end is oppositely arranged across interval mutually, but the side near front end is oppositely arranged mutually across interval.In this situation, electrode 12, electric discharge auxiliary electrode 5 and high dielectric constant layer 7 are behind set in the region arranging gap.Further, as shown in Figure 6, behind electrode 12 also can be set to comprise the whole region in gap.
In addition, in Fig. 2, the front end of the first sparking electrode 3 is relative across gap with the front end of the second sparking electrode 4.Behind electrode 12 is in the part in this gap, with first, second sparking electrode 3,4 overlapping when being set to overlook.Like this, the Width size of electrode 12 behind also can be made to be less than the Width size of sparking electrode 3,4.Here Width size refers to the size on the direction vertical with first, second sparking electrode 3,4 relative directions.
As long as electric discharge auxiliary electrode 5 is set to be interconnected with first, second sparking electrode 3,4 above-mentioned, its flat shape is not particularly limited.
In addition, as long as high dielectric constant layer 7 is set to mutually directly or indirectly be connected with first, second sparking electrode 3,4 above-mentioned, its flat shape is not also particularly limited.
Fig. 7 is the front section view of the Esd protection device 31 that the 3rd execution mode of the present invention relates to.In addition, Fig. 8 be first, second sparking electrode 3 in the Esd protection device 31 representing the 3rd execution mode, 4, electric discharge auxiliary electrode 5, high dielectric constant layer 7 and the position relationship of electrode 12 behind schematic plan view.As shown in Figure 7 and Figure 8, in the third embodiment, electrode 12 is drawn in the side of substrate 22 behind, is electrically connected with the second outer electrode 11.Other point is identical with the Esd protection device 1 of the first execution mode.
As shown in the embodiment, when electrode 12 is electrically connected with outer electrode 11, discharge ionization voltage can be made to reduce further behind.
In addition, the Esd protection device 31 of the 3rd execution mode is identical with Esd protection device 1 due to other structure, therefore in the same manner as Esd protection device 1, can reduce discharge ionization voltage, and can not cause the numerous and diverse of manufacturing process.
Similarly, Fig. 9 and Figure 10 be represent first, second sparking electrode in the front section view of the Esd protection device 41 that the 4th execution mode relates to and this Esd protection device 41 3,4, electric discharge auxiliary electrode 5, high dielectric constant layer 7 and the position relationship of electrode 12 behind schematic plan view.
In the Esd protection device 41 of the 4th execution mode, electrode 12,12A are electrically connected with outer electrode 11 behind.Other side, the 4th execution mode is identical with the second execution mode.
In 4th execution mode, because behind electrode 12,12A are electrically connected with outer electrode 11, discharge ionization voltage therefore can be made to reduce further.In addition, also heat deterioration can be suppressed.
The Esd protection device 41 of the 4th execution mode is identical with Esd protection device 21 due to other structure, therefore in the same manner as Esd protection device 21, can reduce discharge ionization voltage.
In addition, in the Esd protection device 1,21 of the first and second execution mode, be provided with behind electrode 12 or behind electrode 12,12A, but also shown in the 5th and the 6th execution mode as shown in figs. 11 and 12, electrode behind can be omitted.
Further, also shown in the 7th and the 8th execution mode as shown in Figure 13 and Figure 14, the electric discharge auxiliary electrode 5 arranged in the first and second execution mode can be omitted.
Below, specific embodiments of the invention are described.
(embodiment 1,2 and comparative example 1)
Based on following main points, make as the embodiment 1,2 of the embodiment of the second execution mode and the Esd protection device of comparative example 1 for comparing.
Prepare by formed using the composition of Ba, Al and Si, as the ceramic powders (relative dielectric constant: 5 ~ 9) of the known ceramic component of BAS material.In this ceramic powders, add mixed toluene and alcohol, then add adhesive resin and plasticizer, obtain ceramic size.Utilize scraping blade method that this ceramic size is shaped, obtain the master slice of the ceramic green sheet of thickness 50 μm.In addition, the high-k powder shown in table 1 hereafter and the oxide powder shown in table 2 is hereafter prepared.
[table 1]
Table 1
| High-k powder | Composition | Relative dielectric constant (t r) | D50(μm) | SSA(m 2/g) |
| DM-1 | BaTiO 3 | 2000 | 0.5 | 1.7 |
[table 2]
Table 2
| Oxide powder | Composition | D10(μm) | D50(μm) | D90(μm) | SSA(m 2/g) |
| 0-1 | Al 2O 3 | 0.15 | 0.35 | 0.80 | 6.77 |
In addition, average grain diameter D10, D50 and D90 in table 1 and table 2 are the average grain diameters utilizing laser diffraction flow distribution method to try to achieve.
In addition, the specific area (SSA) in table 1 and table 2 is the value utilizing the BET one point method that have employed nitrogen to try to achieve.
Above-mentioned high-k powder is that the veneer being the barium titanate of 2000 by pulverizing relative dielectric constant obtains.
The oxide powder that the high-k powder recorded by above-mentioned table 1, table 2 are recorded and the mixing of organic carrier solution, obtain the high dielectric constant layer thickener P-1 of composition shown in table 3 hereafter.In order to compare, make the high dielectric constant layer thickener P-2 of oxide-free powder.
[table 3]
Table 3
(electric discharge auxiliary electrode thickener)
Preparing average grain diameter is 2.5 μm, and Al amount is the CuAl alloy powder of 7 % by weight, and average grain diameter is the BaO-Si of 0.5 μm
2-Al
2o
3series vitro-ceramic powder, and the organic carrier solution dissolving 10 % by weight ethyl cellulose resins and obtain in terpinol, make Cu alloy powder be 11.2 overall volume %, above-mentioned BaO-Si
2-Al
2o
3series vitro-ceramic powder is 2.8 overall volume %, and residue has taken above-mentioned organic carrier solution and carried out proportioning like this, obtains electric discharge auxiliary electrode thickener.
(cavity formation thickener)
The crosslinked acrylic resin particle of 38 % by weight average grain diameter 1 μm and the organic carrier solution that dissolved 10 % by weight ethyl celluloses and obtain in terpinol are concocted with 62 % by weight, obtains cavity and form thickener.
(outer electrode thickener)
By the Cu powder of 80 % by weight average grain diameter 1 μm; Glass transition point 620 DEG C, softening point 720 DEG C, 5 % by weight average grain diameters are the borosilicate system frit of 1 μm; With ethyl cellulose is dissolved in terpinol and obtain 15 % by weight organic carriers mixing, obtain external terminal electrode thickener.
(sparking electrode thickener)
By the Cu powder of 40 % by weight average grain diameter 1 μm; The Cu powder of 40 % by weight average grain diameters 3 μm; And 20 % by weight organic carriers having dissolved ethyl cellulose and terpinol and made are concocted, utilize three rollers mixing, make sparking electrode thickener.
(manufacture of ceramic multi-layer baseplate)
On the ceramic green sheet of described master slice, be coated with above-mentioned high dielectric constant layer thickener, then repeat to be coated with above-mentioned auxiliary electrode thickener, on the position forming first, second sparking electrode, then repeat coating sparking electrode thickener.The relative distance in gap is 20 μm.Further, be coated with above-mentioned cavity and form thickener, repeat on empty top to be coated with high dielectric constant layer, carry out drying.
Be coated with above-mentioned cavity and formed ceramic green sheet upper and lower of the master slice of thickener, by stacked for the ceramic green sheet of many pieces of master slices and crimp.Like this, the duplexer that thickness is the master slice of 0.3mm is obtained.
The duplexer of this master slice is cut off at thickness direction, obtains the paster of the flat shape of 1.0mm × 0.5mm, form the substrate of each Esd protection device.
In addition, the central authorities when burning till of the CuAl alloy powder in electric discharge auxiliary electrode thickener are Cu, form the Al of Al oxidation at outer surface
2o
3insulating barrier.Thus, in electric discharge auxiliary electrode, the metallic making to cover the material without conductivity is disperseed.
After burning till, form high dielectric constant layer and barium titanate layer at sparking electrode near surface.
Make paster as described above and obtain substrate.At two end face coating outer electrode thickeners of this substrate, calcining, forms outer electrode.Electrolytic coating is utilized to form plating Ni and plating Sn layer at external electrode surface further.Obtain Esd protection device as described above.
Obtain the Esd protection device of the embodiment 1 obtained as described above, and except adopting high dielectric constant layer thickener P-2 the Esd protection device of the embodiment 2 that obtain identical with above-described embodiment 1.In addition, obtain the Esd protection device of the embodiment 1 obtained as described above, and except not using high dielectric constant layer thickener the Esd protection device of the comparative example 1 that obtain identical with above-described embodiment 1.
For the above-mentioned each Esd protection device obtained like that, with IEC specification, IEC61000-4-2 for benchmark, utilize contact discharge, from low voltage side, apply ESD.Try to achieve the work ratio of Esd protection device under each applying voltage.That is, in 100 samples, the number starting the sample discharged is obtained, using this ratio as work ratio.Result is as shown in table 4 below.In addition, the evaluation symbol of work ratio as mentioned below.
◎ ... more than 90% ~ 100%
Zero ... more than 50% ~ 90%
△ ... more than 10% ~ 50%
×…0％～10％
Result as described in Table 4.
[table 4]
Table 4
As shown in Table 4, compared with comparative example 1, according to embodiment 1, known work ratio improves.Namely known discharge ionization voltage effectively reduces.Further, according to not containing the embodiment 2 of oxide powder, knownly effectively reduce discharge ionization voltage further.
In addition, to electrostatic capacitance, with the condition of Vbias=0V, 1MHz, the LCR tester developed by Agilent company measures.Result as described in Table 5.
[table 5]
Table 5
| Electrostatic capacitance (pF) | |
| Comparative example 1 | 0.05 |
| Embodiment 1 | 0.06 |
| Embodiment 2 | 0.07 |
As shown in Table 5, compared with comparative example 1, according to embodiment 1 and 2, known electrostatic capacitance improves.Think that the charge effects increased by utilizing electrostatic capacitance makes discharge ionization voltage reduce further thus.In addition, in the Esd protection device of general high-frequency circuit, usually, the parts that use electrostatic capacitance to be more than 0.5pF, therefore the Esd protection device of embodiment 1 and 2 enough as high-frequency circuit with and use.
(embodiment 3 and 4)
The electrode paste of the sparking electrode thickener identical component prepared and adopt in embodiment 2 is as behind electrode paste.
In the ceramic green sheet of one piece of master slice, above-mentioned behind electrode paste is carried out silk screen printing and makes it not be connected with outer electrode.Except the ceramic green sheet that insertion is printed with the master slice of this behind electrode paste, obtain the Esd protection device of embodiment 3 identically with embodiment 1.
In addition, during except printing above-mentioned behind electrode paste, printing behind electrode paste with make its final to be electrically connected with an outer electrode outside, made the Esd protection device of embodiment 4 identically with above-described embodiment 1.
In embodiment 3 and 4, the position of the below of 10um lower than the position of first, second sparking electrode 3,4 formation in the duplexer stage that electrode is arranged on master slice behind.
For the Esd protection device of the above-mentioned embodiment 3 and 4 obtained like that, appraisal rate similarly to Example 2.
Result as described in Table 6.
[table 6]
Table 6
As shown in Table 6, according to embodiment 3 and 4, discharge ionization voltage can be made as known from compared to Example 2 to reduce further.That is, utilize the formation of electrode behind, known discharge ionization voltage is able to further reduction.
In addition, similarly to Example 2, electrostatic capacitance is measured.Result as described in Table 7.
[table 7]
Table 7
| Electrostatic capacitance (pF) | |
| Embodiment 3 | 0.08 |
| Embodiment 4 | 0.15 |
For electrostatic capacitance, according to embodiment 3 and 5, also increase further compared with embodiment 2.Think thus, charge effects improves further, and discharge ionization voltage can be made to reduce further.In addition, in embodiment 3,4, because electrostatic capacitance is less than 0.5pF, can determine use in high-frequency circuit.
Label declaration
1ESD protective device
2 substrates
2a upper surface
3,4 first, second sparking electrodes
5 electric discharge auxiliary electrodes
6 electroconductive particles covering the material without conductivity
7,7A high dielectric constant layer
8,9 resin beds
10,11 first, second outer electrodes
12,12A electrode behind
21,31,41ESD protective device
22 substrates
22b cavity
Claims (15)
1. an Esd protection device, is characterized in that, comprising:
Substrate;
First, second sparking electrode, this first, second sparking electrode is arranged on the substrate, relative across gap; And
High dielectric constant layer, this high dielectric constant layer is set to directly or indirectly connect described first sparking electrode and described second sparking electrode, and relative dielectric constant is higher than described substrate.
2. Esd protection device as claimed in claim 1, is characterized in that,
Also comprise electric discharge auxiliary electrode, this electric discharge auxiliary electrode is set to connect described first sparking electrode and described second sparking electrode, promotes the electric discharge between first, second sparking electrode described.
3. Esd protection device as claimed in claim 2, is characterized in that,
Described electric discharge auxiliary electrode comprises the electroconductive particle covering the material without conductivity.
4. the Esd protection device according to any one of claims 1 to 3, is characterized in that,
Described high dielectric constant layer is configured and is layered in described electric discharge auxiliary electrode.
5. the Esd protection device according to any one of Claims 1 to 4, is characterized in that,
Described high dielectric constant layer is arranged at least one party in above or below described gap portion.
6. the Esd protection device according to any one of Claims 1 to 5, is characterized in that,
The part of relative dielectric constant lower than described substrate is provided with in described gap.
7. Esd protection device as claimed in claim 6, is characterized in that,
Relative dielectric constant is cavity lower than the part of described substrate.
8. Esd protection device as claimed in claim 6, is characterized in that,
Relative dielectric constant is formed by the material of relative dielectric constant lower than substrate lower than the part of described substrate.
9. Esd protection device as claimed in claim 8, is characterized in that,
Relative dielectric constant is resin lower than the material of described substrate.
10. the Esd protection device according to any one of claim 1 ~ 9, is characterized in that,
Also comprise electrode behind, this behind electrode is set to overlap with the gap between first, second sparking electrode described across a part for described substrate.
11. Esd protection device as claimed in claim 10, is characterized in that,
Also comprise first, second outer electrode, this first, second outer electrode is arranged on the substrate, is electrically connected respectively with first, second sparking electrode described,
Described behind electrode is electrically connected with in first, second outer electrode described.
12. Esd protection device as claimed in claim 10, is characterized in that,
Described behind electrode is suspension electrode.
13. Esd protection device according to any one of claim 10 ~ 12, is characterized in that,
Described behind electrode comprises: metal, and compared with described substrate the material of high-k.
14. Esd protection device according to any one of claim 1 ~ 13, is characterized in that,
First, second sparking electrode described is arranged on the outer surface of described substrate.
15. Esd protection device according to any one of claim 1 ~ 13, is characterized in that,
The front end of first, second sparking electrode described is arranged in described substrate, and described gap is positioned at substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013109128 | 2013-05-23 | ||
| JP2013-109128 | 2013-05-23 | ||
| PCT/JP2014/059616 WO2014188792A1 (en) | 2013-05-23 | 2014-04-01 | Esd protection device |
Publications (2)
| Publication Number | Publication Date |
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| CN105229877A true CN105229877A (en) | 2016-01-06 |
| CN105229877B CN105229877B (en) | 2017-08-25 |
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|---|---|
| US (1) | US10193332B2 (en) |
| JP (1) | JP6107945B2 (en) |
| CN (1) | CN105229877B (en) |
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| JP6209966B2 (en) * | 2013-12-26 | 2017-10-11 | Tdk株式会社 | ESD protection parts |
| US11178800B2 (en) * | 2018-11-19 | 2021-11-16 | Kemet Electronics Corporation | Ceramic overvoltage protection device having low capacitance and improved durability |
| TWI781418B (en) * | 2019-07-19 | 2022-10-21 | 美商凱門特電子股份有限公司 | Ceramic overvoltage protection device with low capacitance and improved durability and method of making the same |
| TWI790003B (en) * | 2021-11-18 | 2023-01-11 | 佳邦科技股份有限公司 | Over-voltage protection device |
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| JP3265848B2 (en) * | 1994-09-09 | 2002-03-18 | 三菱マテリアル株式会社 | Micro gap type surge absorber |
| JPH11204232A (en) * | 1998-01-13 | 1999-07-30 | Mitsubishi Materials Corp | Discharge element |
| JP2001043954A (en) | 1999-07-30 | 2001-02-16 | Tokin Corp | Surge absorbing element and manufacture of the same |
| JP4221885B2 (en) * | 2000-07-31 | 2009-02-12 | 三菱マテリアル株式会社 | Chip type surge absorber |
| EP2242154B1 (en) * | 2008-02-05 | 2017-12-06 | Murata Manufacturing Co. Ltd. | Esd protection device |
| JP2010015773A (en) | 2008-07-02 | 2010-01-21 | Murata Mfg Co Ltd | Surge absorber and method of manufacturing the same |
| JP2010146779A (en) * | 2008-12-17 | 2010-07-01 | Panasonic Corp | Overvoltage protection component |
| JP2010153719A (en) * | 2008-12-26 | 2010-07-08 | Panasonic Corp | Overvoltage protection parts and manufacturing method thereof |
| KR101298992B1 (en) * | 2009-09-30 | 2013-08-23 | 가부시키가이샤 무라타 세이사쿠쇼 | Esd protection device and manufacturing method thereof |
| WO2012043534A1 (en) * | 2010-09-29 | 2012-04-05 | 株式会社村田製作所 | Esd protection device and method of manufacturing thereof |
| US8885324B2 (en) * | 2011-07-08 | 2014-11-11 | Kemet Electronics Corporation | Overvoltage protection component |
| US8658245B2 (en) * | 2011-08-31 | 2014-02-25 | Lexmark International, Inc. | Spin coat process for manufacturing a Z-directed component for a printed circuit board |
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| US20160056627A1 (en) | 2016-02-25 |
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| CN105229877B (en) | 2017-08-25 |
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| JPWO2014188792A1 (en) | 2017-02-23 |
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