CN111863983A - Method for producing a photoemissive and/or receiving device with a metal optical separation grid - Google Patents

Method for producing a photoemissive and/or receiving device with a metal optical separation grid Download PDF

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CN111863983A
CN111863983A CN202010344997.8A CN202010344997A CN111863983A CN 111863983 A CN111863983 A CN 111863983A CN 202010344997 A CN202010344997 A CN 202010344997A CN 111863983 A CN111863983 A CN 111863983A
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optical separation
separation grid
support
photoemissive
metal
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CN111863983B (en
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阿德里安·加斯
卢多维奇·杜普瑞
马里恩·沃尔博特
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Abstract

The invention relates to a method for producing a photoemissive and/or photoreceiving device (100) with a metallic optical separation grid (140), comprising at least: producing at least one photoemissive and/or photoreceiving component (102), wherein at least one first metal electrode (110) of the photoemissive and/or photoreceiving component covers the flanks of at least one semiconductor stack (104, 106, 108) of the photoemissive and/or photoreceiving component and extends to at least one emitting and/or receiving face (112) of the photoemissive and/or photoreceiving component; treating at least one face of the first metallic electrode at the transmitting and/or receiving face so that said face of the first metallic electrode can be wetted; -producing a metal optical separation grid on at least one support (142); fastening a metal optical separation grid on the face of the first metal electrode by brazing; the support is removed.

Description

Method for producing a photoemissive and/or receiving device with a metal optical separation grid
Technical Field
The present invention relates to the field of devices with a photo-emitting diode, such as a light emitting diode (called LED or micro LED), and/or with a photo-receiving diode, such as a photodiode. The invention is particularly applicable in the following fields:
LED lighting devices, electronic devices such as screens, projectors or video walls comprising a matrix of LEDs;
-a photo-receiving microelectronic or electronic device, such as an image sensor, comprising a matrix of photodiodes;
devices comprising photo-emitting diodes and photo-receiving diodes, which form, for example, sensors and screens.
Background
In photo-emissive and/or photo-receiving diode devices it is often advantageous to increase the resolution of the device by means of surface elements of the device, i.e. to increase the number of active elements or pixels. This increase in resolution involves both reducing the unit size of the pixel sites and improving the optical separation between the pixel sites, in order to reduce inter alia "crosstalk", i.e. the optical interference that occurs between adjacent pixel sites. In the case where a pixel includes a photo-emissive diode, the increase in directivity of the pixel also participates in the increase in resolution that the device can achieve.
Furthermore, this increase in resolution must be achieved by limiting the losses associated with the sensitivity of the device to reception and/or emission, which means that the useful or sensitive surface of the pixel (i.e. the surface of reception and/or emission of the pixel) is reduced, with a reduction in the surface of the peripheral blind zones (i.e. the surface that does not emit light or receive light), corresponding for example to the areas occupied by the electrodes of the diodes and to the insulating areas located between the pixels and around the pixels. The reduction of the surface of the peripheral dead zone involves minimizing the width of the peripheral dead zone around the pixel points while still maintaining or improving the optical separation between the pixel points.
In current devices, in order to obtain good performance, it is necessary to produce an optical separation device of the pixel points, which is arranged above the emission and/or reception faces of the pixel points. Such optical separation elements of pixel points (referred to as collimation grids or optical separation grids) make it possible to prevent interference (crosstalk) between adjacent pixel points and also to improve light emission directivity. Furthermore, the optical separation grid may also be used to arrange wavelength converting elements on the pixel points of the radiation intended to be emitted and/or received by the pixel points, thereby making it possible, for example, to change the emitted color or filter the received light. In the case of a photoemissive device, such a conversion element includes, for example, a phosphor. Therefore, when the height of the element is large, the optical separation grating serves to optically isolate the pixel points from each other.
Typically, an optical separation grid is added over the pixel sites after production is complete. In order not to limit the useful surface of the pixel and to obtain good performance, the walls forming the optical separation grid are made as fine as possible, for example with a width or thickness of less than about 5 μm and a great height, for example greater than about 10 μm, for the following pixels: the size (width) of the sides of the useful surface of each pixel point is equal to about 40 μm. Such dimensions result in an optical separation grating having a significant aspect ratio (height/width ratio), e.g. greater than 2. Furthermore, the good perpendicularity, the low roughness and the good reflectivity of the walls make it possible to obtain an optical separation grating which does not interfere with the reflection, diffraction and diffusion of the optical signals received and/or emitted by the pixel points.
In case the device comprises a diode for photo-electric emission and/or photo-electric reception from its front side (the side opposite to the side of the substrate on which the diode is produced), such an optical separation grid can be produced during the fabrication of the interconnect layers (also called BEOL ("back end of line")) of the device. Of these interconnect layers, the interconnect layer formed on the front side of the diode may be dedicated to the production of the optical separation gate. This configuration makes it possible to obtain a high degree of integration and therefore a small size, as well as a good alignment of the optical separation grid with the pixel sites. However, this configuration cannot be applied to a device that performs transmission and/or reception of light from the back surface of the diode because the interconnect layer is generated on the front surface of the device. Furthermore, the height of the optical separation grid thus obtained is limited by the technology used to produce the interconnect layer, which is typically between about 1 μm and 3 μm.
Thus, in the case of a device with emission and/or reception of light from its back side, the optical separation grid is produced by implementing a specific method after the creation of the interconnection layer, the transfer of the device onto a support and the removal of the substrate from which the device is produced. The removal of the substrate frees up the backside of the diode on which the optical separation grid is created. In this case, the main problem to manage is the alignment of the optical separation grid with the pixel sites.
Furthermore, when the alignment gate is produced in such a manner that a material is deposited in a trench formed in advance by photolithography, the deposited material must be planarized.
Disclosure of Invention
It is an object of the present invention to propose a method for producing a photoemissive and/or photoreceiving device with an optical separation grid that can be applied to a device for the emission and/or reception of light from its back side, which makes it possible to obtain good alignment of the optical separation grid with one or more photoemissive and/or photoreceiving components of the device, without the need to planarize the deposited material to form the optical separation grid.
To this end, the invention proposes a method for producing a photoemissive and/or photoreceiving device with an optical separation grid, comprising at least:
-producing at least one photoemissive and/or photoreceiving component, wherein the at least one first metallic electrode of the photoemissive and/or photoreceiving component covers or is arranged against a flank of the at least one semiconductor stack of the photoemissive and/or photoreceiving component and extends to at least one emitting and/or receiving face of the photoemissive and/or photoreceiving component;
-treating at least one face of the first metallic electrode at the emitting and/or receiving face so that said face of the first metallic electrode can be wetted;
-producing a metal optical separation grid on at least one support;
-fastening a metal optical separation grid on said face of the first metal electrode by brazing;
-removing the support.
The method proposes to transfer and fasten the metallic optical separation grid by means of brazing using one of the electrodes of at least one component of the device, so as to define contact zones on which the optical separation grid is transferred and fastened, these contact zones being previously made suitable for brazing (i.e. wettable).
The use of brazing to fasten the optical separation grid makes it possible to perfectly align the optical separation grid with respect to one or more photoemissive and/or photoreceiving components of the device, since a self-aligning effect occurs when the brazing material used is in the molten state and this alignment is naturally performed by capillary action between the face of the first metal electrode and the metal optical separation grid.
Since the optical separation grid is produced beforehand on the support without relying on one or more photoemissive and/or photoreceiving components, there is no need for a step of planarizing the material, contrary to the case where the optical separation grid is produced in such a way that the material is deposited in trenches formed by photolithography, before the production of the components.
Furthermore, the method requires few steps to implement, few constraints, and does not have any complex alignment.
The method can be implemented to produce a color LED matrix or an RGB or black-and-white type LED matrix with very good contrast, for example an LED matrix headlamp for a car.
A material or surface has wettability when a drop of liquid (in the present case liquid soldering) located on the material or the surface forms a contact angle of less than 90 °.
The metal optical separation grid is fastened to the face of the first metal electrode, which face is on the side opposite to the side on which the support is present.
The photoemission and/or photoreceiving component may comprise at least one photoemission and/or photoreceiving diode comprising at least:
-a first portion and a second portion of doped semiconductor, the first portion and the second portion being part of the semiconductor stack and forming a p-n junction, the first portion of doped semiconductor being arranged between the second portion of the first portion of doped semiconductor and the second portion of doped semiconductor;
-a dielectric portion covering or arranged against the flanks of the first portion of doped semiconductor and the flanks of the second portion of doped semiconductor;
-a second electrode electrically coupled to the second portion of doped semiconductor and such that the second portion of doped semiconductor is arranged between the first portion of doped semiconductor and the second electrode;
and wherein the first metal electrode is disposed against the outer side wing of the dielectric portion and against the side wing of the second portion of the first portion of doped semiconductor such that the first metal electrode is electrically coupled to and electrically insulated from the first portion of doped semiconductor.
The outer flank of the dielectric portion corresponds to the flank opposite the flank that is arranged against the first part of the first portion and against the second portion.
The method may further comprise, between the production of the photoemissive and/or photoreceiving component and the treatment of the face of the first metallic electrode or after the removal of the support, electrically and mechanically coupling the photoemissive and/or photoreceiving component to at least one electronic control circuit, on the side opposite to the emission and/or receiving face.
Treating the face of the first metal electrode may include depositing at least one wettable material on the face of the first metal electrode or etching a second non-wettable material on the face of the first metal electrode when the first metal electrode includes at least one first wettable metal material covered by at least one second non-wettable material. This etching of the second non-wettable material makes it possible to access the first wettable metal material which then forms the face of the first metal electrode on which the metal optical separation grid is fastened by brazing.
The method may further comprise depositing at least one brazing material on the metal optical separation grid between producing the metal optical separation grid and securing the metal optical separation grid. The brazing material corresponds to a brazing material for brazing the metal optical separation grid to the face of the first metal electrode. Alternatively, the brazing material may not be deposited on the optical separation grid, but on the first electrode. According to another alternative, the first brazing material may be deposited on the optical separation grid and the second brazing material on the first electrode.
A metal optical separation grid can be produced on a support, at least one sacrificial layer being arranged between the metal optical separation grid and the support, and the support can be removed by suppressing the sacrificial layer.
In this case, the method may be such that:
the material of the sacrificial layer can be selectively etched with respect to the material of the metal optical separation grid;
the method further comprises, between producing the metal optical separation grid and fastening the metal optical separation grid, partially etching the sacrificial layer so that the remaining part of the sacrificial layer is located between the metal optical separation grid and the support;
-removing the support by suppressing the remaining part of the sacrificial layer.
Alternatively, the method may be such that:
-the sacrificial layer comprises at least one material that is soluble in a solvent, and the removal of the support comprises at least one contact of the sacrificial layer with the solvent, thereby dissolving the material of the sacrificial layer, or
The sacrificial layer comprises at least polyimide and the removal of the support comprises at least once contacting the sacrificial layer with a plasma, thereby etching the polyimide.
According to another alternative, the method may be such that:
-producing a metal optical separation grid on a support with at least one temporary bonding layer arranged between the metal optical separation grid and the support;
the temporary bonding layer comprises at least one material, the bonding properties of which can be reduced starting from a given temperature to which said material is exposed, and the fastening of the metal optical separation grid is carried out at a temperature greater than or equal to said given temperature.
According to another alternative, the method may be such that:
-producing a metal optical separation grid on a support, wherein at least one temporary bonding layer is arranged between the metal optical separation grid and the support;
the temporary bonding layer comprises at least one material whose bonding properties can be reduced when said material is exposed to electromagnetic radiation (for example ultraviolet radiation or infrared radiation), the removal of the support comprising at least one exposure of the temporary bonding layer to electromagnetic radiation through the support.
According to another alternative, the method may be such that:
-producing a metal optical separation grid on a support with at least one oxide layer and at least one platinum layer arranged between the metal optical separation grid and the support;
the removal of the support comprises at least one mechanical separation at the interface between the oxide layer and the platinum layer.
Producing the metal optical separation grid may further comprise producing at least one wavelength converting element of radiation intended to be emitted and/or received by the photoemissive and/or photoreceiving component on the support, the at least one wavelength converting element being arranged between the parts of the metal optical separation grid such that, after fastening the metal optical separation grid, the wavelength converting element is arranged facing the semiconductor stack of the photoemissive and/or photoreceiving component.
The wavelength converting element may comprise a phosphor.
The method may be such that:
-producing a plurality of photoemissive and/or photoreceiving elements and forming a matrix of pixels of the photoemissive and/or photoreceiving device;
the first metal electrode is arranged around each of the photoemissive and/or photoreceiving parts and is common to the photoemissive and/or photoreceiving parts.
Drawings
The invention will be better understood when reading the description of an embodiment given solely for the purpose of providing information and in no way limiting, with reference to the accompanying drawings, in which:
figures 1 to 21 show the steps of a method for producing a photoemissive and/or photoreceiving device with a metallic optical separation grid, which is a solution of the present invention, according to a first embodiment;
figures 22 and 23 show the steps of a method for producing a photoemissive and/or photoreceiving device with a metallic optical separation grid, which is a solution of the present invention, according to a second embodiment.
The same, similar or equivalent parts of different figures described below have the same reference numerals to ease the passage from one figure to another.
The various parts shown in the drawings are not necessarily shown to the same scale in order to make the drawings more legible.
The different possibilities (alternatives and embodiments) must be understood as not being mutually exclusive and can be combined with each other.
Detailed Description
Fig. 1 to 21, described below, show the steps of a method for producing a photoemissive and/or photoreceiving device 100 according to a first embodiment.
In a first step, at least one photoemissive and/or photoreceive component 102 of the device 100 is produced. In the first embodiment described herein, a plurality of photoemissive and/or photoreceiving members 102 are produced and arranged adjacent to one another in a manner forming a matrix.
In the particular exemplary embodiment shown in fig. 1 to 21, the produced device 100 corresponds to an emitting device and the components 102 correspond to LEDs arranged in the form of a matrix. Alternatively, the device 100 may correspond to a photo-receiving device, wherein the component 102 corresponds to a photodiode, for example. According to another alternative, the device 100 can both emit light and receive light and comprises a matrix comprising both photo-emissive components 102, such as LEDs, and photo-receiving components 102, such as photodiodes.
Fig. 1 shows a cross-section of a plurality of components 102, and fig. 2 shows a top view of these components 102.
Each component 102 includes a first portion 104 of doped semiconductor according to a first type of conductivity (e.g., n-type). The thickness of the first portion 104 corresponds to the dimension of the first portion perpendicular to the face of the support on which the first portion 104 is arranged and parallel to the axis Z shown in fig. 1. The thickness of the first portion 104 is, for example, between about 20nm and 10 μm, preferably between about 2 μm and 4 μm.
According to a first exemplary embodiment, the first portion 104 includes a single doped semiconductor (e.g., a doped semiconductor doped with n) having, for example, between about 1017Donor/cm3To 5.1020Donor/cm3And corresponds to GaN, for example.
According to a second exemplary embodiment, the first portion 104 is formed by stacking a plurality of different semiconductors, for example a first doped semiconductor n + having, for example, between about 5.1017Donor/cm3To 5.1020Donor/cm3And a second doped semiconductor n-has, for example, between about 1017Donor/cm3To 5.1019Donor/cm3Donor concentration in between. The first semiconductor is, for example, GaN and the second semiconductor is, for example, InGaN. The first semiconductor may have a thickness greater than about 100nm, e.g., equal to about 3 μm, and the second semiconductor may have a thickness between about 5nm and 500nm, for example. Alternatively, the different semiconductors of the first portion 104 may be doped with the same doping level.
In certain exemplary embodiments described herein, wherein the components 102 correspond to LEDs, eachComponent 102 further comprises an emission region 106 comprising one or more (for example five) emission layers intended to each form a quantum well, for example comprising InGaN, and each emission layer being arranged between two barrier layers, for example comprising GaN. The emitter layer or layers comprise an intrinsic semiconductor material, i.e. a material that is not intentionally doped (residual donor concentration n) nidFor example equal to about 1017Donor/cm3Or between about 1015Donor/cm3To 1018Donor/cm3In between). The thickness (dimension along axis Z) of the or each emitting layer is for example equal to about 3nm, generally between about 0.5nm and 10nm, and the thickness (dimension along axis Z) of each blocking layer is for example between about 1nm and 25 nm.
Alternatively, the component 102 may not include the emission region 106.
Each component 102 further comprises a second portion 108 of doped semiconductor according to a second type of conductivity (opposite to the doped conductivity of the first portion 104 and here p-type), wherein the concentration of acceptor is for example between about 1017Receptor/cm3To 5.1019Receptor/cm3In the meantime. The semiconductor of the second portion 108 is, for example, GaN, and the thickness (dimension along the axis Z) of the semiconductor is, for example, between about 20nm and 10 μm.
The emission region 106 is arranged between the first portion 104 and the second portion 108.
Portions 104 and 108 form a p-n junction of component 102. The portions 104, 108 and the emissive region 106 together form a p-i-n junction.
Alternatively, the conductivity type of the semiconductors of portions 104 and 108 may be reversed relative to the examples described herein.
In an alternative embodiment, an electron blocking layer (not shown in fig. 1 to 21) may be arranged between the second portion 108 and the emitter region 106, wherein the electron blocking layer comprises AlGaN, for example with 12% aluminum, and an acceptor concentration, for example equal to about 10 17Receptor/cm3P-type doping of (2).
Materials other than those described above may be used to produce portions 104, 108 and emitter region 106.
In each component 102, the portions 104, 108 and the emitter region 106 form a semiconductor stack corresponding to a mesa structure. The expression "mesa structure" denotes the fact that: i.e. the component 102 is produced in the form of a stack of doped semiconductor portions 104, 108, wherein a junction region is formed at the interface of these two doped semiconductor portions 104, 108 and the stack is etched here in the form of islands, named mesas, over its entire height.
The lateral dimension (dimension along the plane (X, Y)) of one of the mesas formed by the member 102 may be between about 500nm and 1mm, or between 500nm and several millimeters, depending on the target application and the desired pixel density. For example, for applications using high power diodes (e.g., LED matrices for vehicle headlamps), the size of the diodes is larger (tens of microns) than the size of the diodes in applications using low power diodes (e.g., screen areas (typically less than about 10 microns)).
Each component 102 comprises a first electrode 110 which covers a flank of or is arranged against the semiconductor stack of the component 102 formed by the portions 104, 108 and the emission area 106 and which extends over the entire height of the mesa formed by the component 102 to the emission and/or receiving face 112 of the component 102. The first electrode 110 corresponds to, for example, a cathode of the component 102. The first electrode 110 here comprises a central portion 114, for example comprising copper, and an outer layer 116, for example comprising titanium, for example with a thickness of between about 5nm and 300nm, and aluminium, for example with a thickness of between about 50nm and 1 μm, covering the central portion 114. Advantageously, the thickness of the outer layer 116 is equal to about 400 nm.
The width of the first electrode 110 (corresponding to the dimension along the axis X shown in fig. 1) is smaller than the dimension of the side of the component 102 in the plane (X, Y) and is for example between about 1 μm and 20 μm, or between about 3 μm and 6 μm, and is for example equal to about 5 μm.
In the first embodiment described herein, the first electrode 110 is electrically coupled together with the plurality of components 102 of the device 100 to form a common electrode (e.g., cathode). The first electrodes 110 together form a gate, portions of which surround the semiconductor stack of these components 102.
In the device 100, the first electrode 110 also serves to optically insulate the components 102 from one another. The outer layer 116 especially makes it possible to have a good optical reflection on the flanks of the mesa structure, especially when the outer layer comprises aluminum, and thus limits crosstalk between adjacent features 102.
Each component 102 further includes a dielectric portion 118 that covers the flanks of first portion 120 of first portion 104, the flanks of emitter region 106, and the flanks of second portion 108. The dielectric portion 118 comprises, for example, SiN/SiO2Bilayer and having a thickness or width, for example, between about 3nm to 2 μm and for example equal to about 200 nm. These dielectric portions 118 provide electrical insulation between the first electrode 110 and the second portion 108 and between the first electrode 110 and the emission region 106.
The dielectric portion 118 does not cover the lateral wings of the second portion 122 of the first portion 104 (the first portion 120 is disposed between the second portion 122 and the second portion 108). Thus, the first electrode 110 is in electrical contact with the second portion 122 of the first portion 104. In fig. 1-21, the first and second portions 120, 122 of the first portion 104 are symbolically bounded to each other by dashed lines.
Each component 102 further comprises a second electrode 124, for example corresponding to an anode, which is electrically connected to the second portion 108 and such that the second portion 108 is arranged between the second electrode 124 and the first portion 104. The second electrode 124 includes, for example, an optically reflective material such as aluminum or silver. The material is optically reflective in that the material has an amplitude reflection coefficient (the ratio of the amplitude of the reflected light to the amplitude of the incident light) of at least 80%.
The distance between two adjacent features 102, i.e. the sum of the thickness of a portion of the first electrode 110 and the thickness of the two dielectric portions 118, is, for example, greater than or equal to about 0.5 μm.
Each component 102 also includes a dielectric portion 126 that provides electrical insulation between the first electrode 110 and the second electrode 124.
The component 102 comprises electrodes 110, 124 of the component, which are accessible from a back face 128 opposite the emission area 112.
The component 102 is transferred at its back side 128 to an electronic control circuit 130, to which electronic control circuit 130 the electrodes 110, 124 of the component 102 are electrically coupled. This transfer makes it possible to electrically and mechanically couple component 102 to circuit 130. The circuit 130 comprises a substrate on which active addressing components, for example of the CMOS or passive type (interconnection network) are produced in particular. The conductive pads 132 allow electrical access to the components of the circuit 130 from outside the device 100. The transfer of the component 102 over the electronic control circuit 130 is achieved by means of a hybrid, for example by means of soldering or direct gluing between the contact pads of the circuit 130 and the contact pads 134 formed between the component 102 and the circuit 130. The contact pad comprises, for example, copper.
Details regarding the production of the component 102 are described in document WO 2017/068029a 1.
After the production of the component 102, the face of the first electrode 110 on the side of the emission face 112 is treated so that this face of the first electrode 110 is wettable. In practice, the material present on the surface of the first electrode 110 (here corresponding to the metal of the outer layer 116) is generally non-wettable (like aluminum), or not sufficiently wettable.
According to a first example, the processing comprises depositing at least one wettable material on the processed face of the first electrode 110 (i.e. the face of the first electrode 110 on which the optical separation grating 140 is produced). The wettable material corresponds for example to a bilayer of the Ni/Au type. The wettable material is deposited, for example, by so-called "electroless" deposition, i.e. the deposition of the material is carried out without the use of an electric current. Alternatively, the deposition of the wettable material corresponding to the Ti/Ni/Au polymolecular layer may be carried out, for example, by a technique called "lift-off" or any other method using conventional methods of metal deposition and photolithography. The structure obtained at the end of this treatment according to this first example is shown in fig. 3 and 4, with reference numeral 136 denoting the part of the wettable material deposited on the first electrode 110 (in these figures, the wettable material is also deposited on the pad 132).
According to a second example, when the first electrode 110 comprises a wettable material covered by a non-wettable material (as is the case here with copper of the central portion 114 covered by titanium and aluminum of the outer layer 116), the treatment may comprise etching the non-wettable material of the first electrode 110 to expose the wettable material of the first electrode 110. Such etching is for example by using plasma, advantageously by using SF 6And/or a chlorinated plasma to suppress the one or more metals of the outer layer 116 of the first electrode 110. During this etching, the liner 132 is covered with a protective resin so that the liner is not changed by the etching. Then, the resin is suppressed. Alternatively, ion beam etching may be performed. The structure obtained at the end of this process is shown in fig. 5 and 6.
While the first electrode 110 is processed, a metal optical separation grid 140 is produced which is intended to be transferred onto the first electrode 110.
A first exemplary embodiment of an optical separation grid 140 is described below in conjunction with fig. 7-10.
The optical separation grating 140 is made of a support 142, which corresponds, for example, to a semiconductor substrate, here a silicon substrate. The support 142 here corresponds to a silicon wafer with a diameter equal to 200 mm.
Sacrificial layer 144 is formed on support 142 as follows: the optical separation grid 140 is intended to be produced on one side of the face. The material of the sacrificial layer 144 can be selectively etched with respect to the material of the optical separation gate 140. In the embodiment described herein, the sacrificial layer 144 corresponds to a titanium layer. The thickness of the sacrificial layer 144 (the dimension along the axis Z) is here equal to 50 nm.
Then, a metal growth layer 146 is formed on the sacrificial layer 144, from which the material of the optical separation gate 140 will be deposited. In the embodiments described herein, growth layer 146 comprises copper. Sacrificial layer 144 also serves as an anchor layer for deposition of growth layer 146. The thickness of the growth layer 146 (dimension along the axis Z) is for example equal to about 100 nm.
The desired pattern of optical separation grating 140 is defined by a resin mask 148 deposited on growth layer 146 (see fig. 7). This pattern corresponds to the pattern of the first electrode 110, i.e. here to the pattern of the gate.
The metallic material (e.g., copper) of the optical separation gate 140 is then deposited from the portions of the growth layer 146 not covered by the mask 148. Such deposition corresponds for example to electrochemical deposition or ECD growth.
The widths of the portions of the optical separation grating 140 (the dimension along the axis X shown in fig. 8) are equal to or close to the width of the first electrode 110. The height of the optical separation grid 140 (dimension along axis Z shown in fig. 8) is, for example, between about 5 μm and 50 μm, and advantageously between about 10 μm and 20 μm.
Then, the brazing material 150 is deposited on the metal material of the optical separation grid 140. The brazing material 150 includes, for example, at least one of the following materials: SnAg, In, Sn, SnCu, InSn. The brazing material 150 can be deposited directly after the grid 140 by the same ECD electrochemical deposition technique or by a subsequent deposition of the type "lift off", dipping, coating, screen printing, etc. The thickness (dimension along axis Z) of the brazing material 150 is, for example, between about 1 μm and 10 μm, and is, for example, equal to about 3 μm.
The mask 148 is then removed (see fig. 8).
The portions of growth layer 146 and sacrificial layer 144 covered by mask 148 are then inhibited, for example, by chemical etching.
Then, in order to facilitate later removal of the supports 142 with respect to the optical separation grid 140, a step of over-etching the sacrificial layer 144 is carried out. Such over-etching of the sacrificial layer 144 suppresses the portion of the sacrificial layer 144 existing between the optical separation gate 140 and the support 142 such that only the remaining portion of the sacrificial layer 144 is located at the interface formed by the optical separation gate 140, as can be seen in fig. 10.
A second advantageous exemplary embodiment of an optical separation grid 140 is described below in connection with fig. 11-13.
As in the first embodiment described above, the optical separation grating 140 is produced from a support 142 on which a sacrificial layer 144 is produced. In contrast to the first exemplary embodiment (in which the sacrificial layer 144 corresponds to a material layer that can be selectively etched and also forms an anchoring layer for the metal growth layer 146), the functions of the sacrificial layer and the anchoring layer are here realized by two separate layers. In this second embodiment, sacrificial layer 144 is disposed between support 142 and the anchor layer with reference number 152 in fig. 11. The anchor layer 152 is disposed between the sacrificial layer 144 and the metal growth layer 146, which is, for example, the same as described above for the first embodiment.
The anchor layer 152 corresponds to, for example, a titanium layer, which is the same as the sacrificial layer described above in connection with the first exemplary embodiment.
The sacrificial layer 144 of this second exemplary embodiment may be produced according to a number of alternatives.
According to a first alternative, the sacrificial layer 144 may comprise a material that is soluble in a solvent. Such a material corresponds, for example, to that sold by the Buluer science company for example and is
Figure BDA0002469745540000131
A temporary bonding resin of type 220 or 305, and the temporary bonding resin is dissolvable in a limonene solution.
According to a second alternative, the sacrificial layer 144 may comprise polyimide. Polyimide is a polymer, for example marketed by HD microsystems, with the reference number PI-2610, with a thickness for example between 1 μm and 2.5 μm and for example equal to about 2 μm, and removable from the oxygen plasma, or with the reference number PI-2611, with a thickness for example between 3 μm and 9 μm. The coefficient of thermal expansion or CTE of the polymer here is, for example, close to that of silicon.
As described above for the first exemplary embodiment, the optical separation grating 140 is produced by depositing the resin mask 148 on the growth layer 146 (see fig. 11), then by depositing the metal material of the optical separation grating 140 starting from the portion of the growth layer 146 not covered by the mask 148, by forming the brazing material 150 on the optical separation grating 140, and by removing the mask 148 (see fig. 12).
The portions of growth layer 146 and anchor layer 152 covered by mask 148 are then inhibited, for example, by chemical etching (see fig. 13).
A third advantageous exemplary embodiment of an optical separation grid 140 is described below in connection with fig. 14-16.
In this third exemplary embodiment, the support 142 is covered with a temporary bonding layer 154. Anchor layer 152 is produced on temporary bonding layer 154, and growth layer 146 is produced on anchor layer 152. The anchoring layer 152 and the growth layer 146 are, for example, the same as described above for the second embodiment of the optical separation gate 140.
The temporary bonding layer 154 of this third exemplary embodiment may be produced according to various alternatives.
According to a first alternative, the temporary bonding layer 154 comprises a bonding material, the bonding properties of which decrease at a given temperature. Temporary bonding layer 154 is sold, for example, by Nitto Denko Corporation and is designated as
Figure BDA0002469745540000141
For example of the "heat-release tape" type, the adhesive properties of the temporary bonding layer being reduced at a temperature greater than or equal to, for example, 170 ℃. In this case, the brazing that can secure the optical separation grid 140 to the first electrode 110 will be carried out at a temperature greater than or equal to the melting temperature of the brazing material 150 used and also greater than or equal to a given temperature at which the adhesive properties of the temporary bonding layer 154 begin to decrease. During brazing, the rapid increase in temperature enables the brazing material 150 used to melt before the temporary bond layer 154 is completely peeled off. At the end of the brazing, the adhesion properties of the temporary bonding layer 154 are zero or almost zero, and then the support 142 may be separated from the optical separation grid 140. If applicable, if peeling cannot be performed during the brazing operation, peeling can be performed by raising the temperature again, above which the adhesive property of the temporary bonding layer 154 is lowered. In this alternative, the brazing material 150 advantageously comprises a low melting temperature and corresponds, for example, to Sn — Ag, In, InSn, or pure Sn. However, due to the bonding energy, other brazing materials 150 may be used.
According to a second alternative, the temporary bonding layer 154 comprises a material whose bonding properties are reduced when the material is exposed to electromagnetic radiation. Such materials correspond, for example, to
Figure BDA0002469745540000151
LTHC (light-to-heat conversion) coatings sold by the company or corresponding to those sold by the Buluer technology company
Figure BDA0002469745540000152
The adhesion properties of LTHC coatings, or HD-3007 coatings sold by HD microsystems, respectively, decrease with infrared radiation obtained from YAG lasers and with ultraviolet radiation (obtained, for example, by excimer lasers, solvents or heat). In this case, removal of the support 142 would include exposing the temporary bonding layer 154 to the applied radiation through the support 142. Thus, in this alternative, the support 142 is selected such that it is transparent or at least partially transparent to the radiation used.
Then, the optical separation grating 140 is produced by forming the brazing material 150 on the optical separation grating 140 and by removing the mask 148 (see fig. 15), as described above for the first and second embodiments, i.e. by depositing the resin mask 148 on the growth layer 146 (see fig. 14), then by depositing the metal material of the optical separation grating 140 starting from the portion of the growth layer 146 not covered by the mask 148.
The portions of growth layer 146 and anchor layer 152 covered by mask 148 are then inhibited, for example, by chemical etching (see fig. 16).
A fourth exemplary embodiment of the optical separation grid 140 is described below in conjunction with fig. 17-19.
In this fourth exemplary embodiment, the support 142 is covered with an oxide layer 156, and then a platinum layer 158 is deposited on the oxide layer. Anchor layer 152 is produced on platinum layer 158, and growth layer 146 is produced on anchor layer 152. The anchor layer 152 and the growth layer 146 are, for example, the same as those described above for the second and third exemplary embodiments of the optical separation gate 140.
The interface formed between the oxide layer 156 and the platinum layer 158 has low adhesion, which will allow the support 142 to be peeled off from the optical separation grid 140 later by mechanically separating the oxide layer 156 from the platinum layer 158.
The optical separation grid 140 is produced by forming a brazing material 150 on the optical separation grid 140 and by removing the mask 148 (see fig. 18), i.e. by depositing a resin mask 148 on the growth layer 146 (see fig. 17), then by depositing the metallic material of the optical separation grid 140 starting from the portion of the growth layer 146 not covered by the mask 148.
The portions of growth layer 146 and anchor layer 152 covered by mask 148 are then inhibited, for example, by chemical etching (see fig. 19).
For the different exemplary embodiments of the optical separation grid 140 described above, the step of depositing the second material, in particular covering the sidewalls of the first metallic material of the optical separation grid 140, may be performed between the step of depositing the metallic material of the optical separation grid 140 and the step of depositing the brazing material 150. The second material of the optical separation grid 140 (the first material covering the optical separation grid 140) is advantageously a metallic material, for example silver, which may be deposited by so-called "electroless" deposition, or by spray coating or PVD deposition, to improve the reflectivity of the sidewalls of the optical separation grid 140 and to protect the first material from oxidation.
After the optical separation grid 140 has been produced, the grid 140 is secured by brazing to the face of the first electrode 110 that has been previously subjected to a treatment that enables it to be wetted (see fig. 20). The brazing is performed through the brazing material 150 at a temperature above the melting temperature of the brazing material 150, for example, a temperature of about 250 ℃. As in the case of fig. 20, the brazing material 160 may be deposited on the first electrode 110 in advance.
When the brazing material or materials used are in a molten state, self-alignment is created between the metal portion of the first electrode 110 and the optical separation grid 140.
Finally, the support 142 is removed and peeled off from the optical separation grating 140, thereby completing the production of the device 100 (see fig. 21). The technique used to create this removal depends on the nature of the layer or layers forming the interface between the support 142 and the optical separation grid 140:
in the case of the sacrificial layer 144, such as described above in the first exemplary embodiment of the optical separation gate 140, a chemical etching is carried out, for example, to suppress the remaining portion of the sacrificial layer 144 located at the interface formed by the optical separation gate 140;
in case the sacrificial layer 144 comprises a material that is soluble in a solvent, the produced assembly may be immersed in a chemical solution comprising the solvent, resulting in a dissolution of the sacrificial layer 144. In this case, it is advantageous that the support 142 comprises a hole forming a passage for the solvent from the face opposite to the face on which the sacrificial layer 144 is located to the sacrificial layer 144;
in case the sacrificial layer 144 comprises polyimide, the produced component may be subjected to a plasma comprising, for example, oxygen, so that the sacrificial layer 144 may be etched. Here again advantageously, the support 142 comprises a hole forming a passage for the plasma from the face opposite to that on which the sacrificial layer 144 is located to the sacrificial layer 144;
In the case where the temporary bonding layer 154 comprises a bonding material whose bonding properties decrease at a given temperature, the support 142 can be removed at the end of the brazing, due to the fact that the temperature reached during this brazing inhibits the bonding properties of the temporary bonding layer 154;
in case the temporary bonding layer 154 comprises a material whose bonding properties decrease when exposed to electromagnetic radiation (for example ultraviolet radiation or infrared radiation), the material is exposed to this radiation caused by the laser through the support 142;
in the case of the interface formed by the oxide layer 156 and the platinum layer 158, the mechanical force applied to the interface of these layers makes it possible to separate these layers from one another. It may then be appropriate to etch the platinum layer 158 or it may then be pre-etched after the etching operation described in connection with fig. 19.
According to a second embodiment, one or more wavelength converting elements 162 of the radiation intended to be emitted and/or received by the component 102 may be arranged between parts of the optical separation grid 140 after removal of the mask 148 during production of the optical separation grid 140. Such elements 162 may be coupled to one or more components 102 on the device 100 or to all components 102 of the device 100. Fig. 22 shows the optical separation grid 140 and the component 102 associated with the element 162.
The elements 162 may include phosphorus, for example, as phosphorus particles disposed in a sol-gel type glass matrix or in a polymer such as silicone and/or acrylic.
In this case, the fastening is performed at a temperature that does not deteriorate the elements 162.
As can be seen in fig. 23, after the optical separation grid 140 is fastened to the first electrode 110, the wavelength converting element is arranged to face the semiconductor stack of the component 102.
In the first and second particular embodiments described above, the component 102 is electrically coupled to the electronic control circuit 130, and then the optical separation grid 140 is transferred onto the first electrode 110 of the component 102. Alternatively, the optical separation grid 140 may be transferred to the first electrodes 110 of the components 102 first, and then the components 102 (which include the optical separation grid 140) are coupled to the electronic control circuit 130.
For all the embodiments and alternatives described above, the method for producing the device 100 can be implemented in different ways:
wafer-to-wafer, i.e. by individually coupling each of the devices 100 with a separate optical separation grid, or
Wafer-to-substrate, i.e. by producing a plurality of devices 100, then by fastening them on a common substrate, and finally by assembling the optical separation grating 140 jointly on the first electrodes 110 of these devices 100, or
Substrate to substrate, i.e. by producing a plurality of devices 100 on a first substrate, and then by assembling the first electrodes 110 of these devices 100 to an optical separation grid 140 produced on a second substrate.

Claims (14)

1. Method for producing a photoemissive and/or photoreceiving device (100) with a metallic optical separation grid (140), characterized in that it comprises at least:
-producing at least one photoemissive and/or photoreceiving component (102), wherein at least one first metallic electrode (110) of the photoemissive and/or photoreceiving component (102) covers the flanks of at least one semiconductor stack (104, 106, 108) of the photoemissive and/or photoreceiving component (102) and extends to at least one emitting and/or receiving face (112) of the photoemissive and/or photoreceiving component (102);
-treating at least one face of the first metallic electrode (110) at the emitting and/or receiving face (112) such that the face of the first metallic electrode (110) can be wetted;
-producing the metal optical separation grid (140) on at least one support (142);
-fastening the metal optical separation grid (140) on the face of the first metal electrode (110) by brazing;
-removing the support (142).
2. The method according to claim 1, wherein the photoemissive and/or photoreceiving component (102) comprises at least one photoemissive and/or photoreceiving diode comprising at least:
-first and second portions of doped semiconductor (104, 108) being part of the semiconductor stack and forming a p-n junction, the first portion (120) of the first portion of doped semiconductor (104) being arranged between the second portion (122) of the first portion of doped semiconductor (104) and the second portion of doped semiconductor (108);
-a dielectric portion (118) covering the flanks of the first portion (120) of the first portion (104) of doped semiconductor and the flanks of the second portion (108) of doped semiconductor;
-a second electrode (124) electrically coupled to the second portion of doped semiconductor (108) and such that the second portion of doped semiconductor (108) is arranged between the first portion of doped semiconductor (104) and the second electrode (124);
and wherein the first metal electrode (110) is arranged against an outer flank of the dielectric portion (118) and against a flank of the second portion (122) of the first portion of doped semiconductor (104) such that the first metal electrode (110) is electrically coupled to the first portion of doped semiconductor (104) and electrically insulated from the second portion of doped semiconductor (108).
3. The method of claim 1 or 2, further comprising, between the production of the photoemissive and/or photoreceiving component (102) and the processing of the face of the first metallic electrode (110) or after the removal of the support (142), electrically and mechanically coupling the photoemissive and/or photoreceiving component (102) to at least one electronic control circuit (130) on the side opposite to the emission and/or receiving face (112).
4. The method of claim 1 or 2, wherein treating the face of the first metal electrode (110) comprises depositing at least one wettable material (136) on the face of the first metal electrode (110) or etching the second non-wettable material (116) on the face of the first metal electrode (110) when the first metal electrode (110) comprises at least one first wettable metal material (114) covered by at least one second non-wettable material (116).
5. The method of claim 1 or 2, further comprising depositing at least one brazing material (150) on the metal optical separation grid (140) between producing the metal optical separation grid (140) and fastening the metal optical separation grid (140).
6. Method according to claim 1 or 2, wherein the metal optical separation grid (140) is produced on a support (142), at least one sacrificial layer (144) being arranged between the metal optical separation grid (140) and the support (142), and wherein the support (142) is removed by suppressing the sacrificial layer (144).
7. The method of claim 6, wherein:
-the material of the sacrificial layer (144) is selectively etchable with respect to the material of the metal optical separation grid (140);
-the method further comprises, between producing the metal optical separation grid (140) and fastening the metal optical separation grid (140), partially etching the sacrificial layer (144) so that the remaining part of the sacrificial layer (144) is located between the metal optical separation grid (140) and the support (142);
-removing the support (142) by suppressing the remaining part of the sacrificial layer (144).
8. The method of claim 6, wherein:
-the sacrificial layer (144) comprises at least one material that is soluble in a solvent, and wherein the removal of the support (142) comprises at least one contact of the sacrificial layer (144) with the solvent, thereby dissolving the material of the sacrificial layer (144), or
-the sacrificial layer (144) comprises at least polyimide, and wherein the removal of the support (142) comprises at least one contacting of the sacrificial layer (144) with plasma, thereby etching the polyimide.
9. The method of claim 1 or 2, wherein:
-producing the metal optical separation grid (140) on the support (142), with at least one temporary bonding layer (154) arranged between the metal optical separation grid (140) and the support (142);
-the temporary bonding layer (154) comprises at least one material, the bonding properties of which can be reduced starting from a given temperature to which said material is exposed, and the fastening of the metal optical separation grid (140) is carried out at a temperature greater than or equal to said given temperature.
10. The method of claim 1 or 2, wherein:
-producing the metal optical separation grid (140) on the support (142), with at least one temporary bonding layer (154) arranged between the metal optical separation grid (140) and the support (142);
-the temporary bonding layer (154) comprises at least one material, the bonding properties of which can be reduced when the material is exposed to electromagnetic radiation, the removal of the support (142) comprising at least one exposure of the temporary bonding layer (154) to the electromagnetic radiation through the support (142).
11. The method of claim 1 or 2, wherein:
-producing the metal optical separation grid (140) on the support (142), at least one oxide layer (156) and at least one platinum layer (156) being arranged between the metal optical separation grid (140) and the support (142);
-the removal of the support (142) comprises at least one mechanical separation at the interface between the oxide layer (156) and the platinum layer (156).
12. The method of claim 1 or 2, wherein producing the metal optical separation grid (140) further comprises producing at least one wavelength converting element (162) of radiation intended to be emitted and/or received by the photoemissive and/or photoreceiving component (102) on the support (142), the at least one wavelength converting element being arranged between portions of the metal optical separation grid (140) such that, after fastening the metal optical separation grid (140), the wavelength converting element (162) is arranged facing the semiconductor stack (104, 106, 108) of the photoemissive and/or photoreceiving component (102).
13. The method of claim 12, wherein the wavelength converting element (162) comprises phosphorous.
14. The method of claim 1 or 2, wherein:
-producing a plurality of photoemissive and/or photoreceiving parts (102) and forming a matrix of pixels of said photoemissive and/or photoreceiving device (100);
-said first metal electrode (110) is arranged around each of said photoemissive and/or photoreceiving parts (102) and is common to said photoemissive and/or photoreceiving parts (102).
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