FR3095550B1 - PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID - Google Patents

PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID Download PDF

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Publication number
FR3095550B1
FR3095550B1 FR1904433A FR1904433A FR3095550B1 FR 3095550 B1 FR3095550 B1 FR 3095550B1 FR 1904433 A FR1904433 A FR 1904433A FR 1904433 A FR1904433 A FR 1904433A FR 3095550 B1 FR3095550 B1 FR 3095550B1
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France
Prior art keywords
photo
emitter
optical separation
separation grid
face
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Active
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FR1904433A
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French (fr)
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FR3095550A1 (en
Inventor
Adrien Gasse
Ludovic Dupre
Marion Volpert
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1904433A priority Critical patent/FR3095550B1/en
Priority to US16/851,165 priority patent/US11094742B2/en
Priority to EP20170995.3A priority patent/EP3731285B1/en
Priority to CN202010344997.8A priority patent/CN111863983B/en
Publication of FR3095550A1 publication Critical patent/FR3095550A1/en
Application granted granted Critical
Publication of FR3095550B1 publication Critical patent/FR3095550B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Procédé de réalisation d’un dispositif photo-émetteur et/ou photo-récepteur (100) à grille de séparation optique métallique (140), comprenant au moins :- réalisation d’au moins un composant photo-émetteur et/ou photo-récepteur (102), dans lequel au moins une première électrode métallique (110) du composant photo-émetteur et/ou photo-récepteur recouvre des flancs latéraux d’au moins un empilement semi-conducteur (104, 106, 108) du composant photo-émetteur et/ou photo-récepteur et s’étend jusqu’à au moins une face émettrice et/ou réceptrice (112) du composant photo-émetteur et/ou photo-récepteur ;- traitement d’au moins une face de la première électrode métallique localisée au niveau de la face émettrice et/ou réceptrice, rendant mouillable ladite face de la première électrode métallique ;- réalisation de la grille de séparation optique métallique sur au moins un support (142) ;- solidarisation de la grille de séparation optique métallique contre ladite face de la première électrode métallique par brasage ;- retrait du support. Figure pour l’abrégé : figure 20Process for producing a photo-emitter and / or photo-receiver device (100) with a metallic optical separation grid (140), comprising at least: - production of at least one photo-emitter and / or photo-receiver component (102), wherein at least a first metal electrode (110) of the photoemitter and / or photo-receptor component covers lateral flanks of at least one semiconductor stack (104, 106, 108) of the photo-emitting component. emitter and / or photo-receiver and extends to at least one emitting and / or receiving face (112) of the photo-emitting and / or photo-receiving component; - treatment of at least one face of the first electrode metallic located at the emitting and / or receiving face, making said face of the first metallic electrode wettable; - realization of the metallic optical separation grid on at least one support (142); - securing of the metallic optical separation grid against said face of the first meta electrode llique by brazing; - removal of the support. Figure for the abstract: figure 20

FR1904433A 2019-04-26 2019-04-26 PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID Active FR3095550B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1904433A FR3095550B1 (en) 2019-04-26 2019-04-26 PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID
US16/851,165 US11094742B2 (en) 2019-04-26 2020-04-17 Method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid
EP20170995.3A EP3731285B1 (en) 2019-04-26 2020-04-23 Method for producing a light-emitting and/or light-receiving device with metal optical separation grid
CN202010344997.8A CN111863983B (en) 2019-04-26 2020-04-27 Method for producing a photoemission and/or reception device with a metal optical separation grid

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1904433A FR3095550B1 (en) 2019-04-26 2019-04-26 PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID
FR1904433 2019-04-26

Publications (2)

Publication Number Publication Date
FR3095550A1 FR3095550A1 (en) 2020-10-30
FR3095550B1 true FR3095550B1 (en) 2021-05-21

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FR1904433A Active FR3095550B1 (en) 2019-04-26 2019-04-26 PROCESS FOR MAKING A PHOTO-EMITTER AND / OR PHOTO-RECEIVER DEVICE WITH A METAL OPTICAL SEPARATION GRID

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Country Link
US (1) US11094742B2 (en)
EP (1) EP3731285B1 (en)
CN (1) CN111863983B (en)
FR (1) FR3095550B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3104809B1 (en) * 2019-12-11 2021-12-17 Commissariat Energie Atomique PROCESS FOR MAKING A LAYER OF STRUCTURED MATERIAL
FR3109018A1 (en) * 2020-04-06 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives DEVICE WITH PHOTO-EMITTING AND / OR PHOTO-RECEIVING DIODES

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3844196B2 (en) * 2001-06-12 2006-11-08 シチズン電子株式会社 Manufacturing method of light emitting diode
CN101438419B (en) * 2006-03-13 2012-02-22 日本电气株式会社 Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module
DE102007022947B4 (en) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor body and method for producing such
US8649647B2 (en) * 2011-12-28 2014-02-11 General Electric Company Method of manufacturing a light guide assembly
US9123839B2 (en) * 2013-03-13 2015-09-01 Taiwan Semiconductor Manufacturing Company Limited Image sensor with stacked grid structure
DE102013103409A1 (en) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and optoelectronic module
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US9831387B2 (en) * 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array
GB201420452D0 (en) * 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
JP6500255B2 (en) * 2015-10-15 2019-04-17 豊田合成株式会社 Method of manufacturing light emitting device
FR3042913B1 (en) 2015-10-22 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives MICROELECTRONIC DIODE WITH OPTIMIZED ACTIVE SURFACE
DE202015106557U1 (en) * 2015-12-02 2016-01-04 Solarworld Innovations Gmbh Bifacial photovoltaic module
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FR3065322B1 (en) * 2017-04-18 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR PRODUCING A LED MATRIX DISPLAY DEVICE
US10388641B2 (en) * 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector

Also Published As

Publication number Publication date
FR3095550A1 (en) 2020-10-30
US20200343296A1 (en) 2020-10-29
EP3731285A1 (en) 2020-10-28
EP3731285B1 (en) 2023-01-18
CN111863983A (en) 2020-10-30
CN111863983B (en) 2024-05-28
US11094742B2 (en) 2021-08-17

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