CN115064612B - Manufacturing method of photoelectric detector - Google Patents
Manufacturing method of photoelectric detector Download PDFInfo
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- CN115064612B CN115064612B CN202210869424.6A CN202210869424A CN115064612B CN 115064612 B CN115064612 B CN 115064612B CN 202210869424 A CN202210869424 A CN 202210869424A CN 115064612 B CN115064612 B CN 115064612B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 194
- 239000002184 metal Substances 0.000 claims abstract description 194
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000002347 injection Methods 0.000 claims abstract description 35
- 239000007924 injection Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 195
- 238000002161 passivation Methods 0.000 claims description 31
- 239000011241 protective layer Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for manufacturing a photoelectric detector. Which comprises providing a substrate; the substrate comprises a substrate body with a first conductivity type and an insulating layer positioned on one side of the substrate body; the substrate body is provided with a first injection region with a first conductivity type and a second injection region with a second conductivity type, which face the insulating layer, and the doping concentration of the first injection region and the doping concentration of the second injection region are both larger than those of the substrate body; a first groove exposing the first injection region and a second groove exposing the second injection region are formed on the insulating layer; forming a first metal layer on the surfaces of the first groove, the second groove and the insulating layer, which are away from the substrate body; forming a second metal layer on the surface of the first metal layer; removing part of the laminated first metal layer and second metal layer to form a first metal connecting wire and a second metal connecting wire which are respectively electrically connected with the first injection region and the second injection region; first and second external connection bonds are formed on the side of the electrode wire facing away from the substrate.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a manufacturing method of a photoelectric detector.
Background
Compared with the traditional front-illuminated photodiode detector, the back-illuminated photodiode detector has the advantages of high mounting reliability, small pixel spacing, easiness in splicing, small crosstalk, good consistency and the like in array module application. The back-illuminated photodetector includes a plurality of back-illuminated photodiodes arranged in an array. Currently, metal balls are required to be implanted when packaging the back-illuminated photodetector to realize the electrical connection between the internal electrode wires and the outside. The most common is the implantation of solder balls. The electrode wire of the back-illuminated photoelectric detector is usually made of metal aluminum, the combination of the back-illuminated photoelectric detector and metal tin is poor, and the contact between a tin ball and the electrode wire is not firm.
In the related art, a metal adhesive layer having good adhesion with both is provided therebetween. And the metal bonding layer can form a metal bonding layer covering the whole passivation layer and the openings after the openings for implanting the metal balls are formed on the passivation layer, then the metal bonding layer in the areas except the openings is removed, then the balls can be implanted, the preparation process is complex, and the control of the preparation cost of the photoelectric detector is not facilitated.
Disclosure of Invention
The invention provides a method for manufacturing a photoelectric detector, which comprises the following steps:
providing a substrate; the substrate comprises a substrate body with a first conductivity type and an insulating layer positioned on one side of the substrate body; the substrate body is provided with a first injection region with a first conductivity type and a second injection region with a second conductivity type, which face the insulating layer, and the doping concentration of the first injection region and the doping concentration of the second injection region are both larger than those of the substrate body; a first groove exposing the first injection region and a second groove exposing the second injection region are formed on the insulating layer;
forming a first metal layer on the surfaces of the first groove, the second groove and the insulating layer, which are away from the substrate body;
forming a second metal layer on the surface of the first metal layer;
removing part of the laminated first metal layer and second metal layer to form a first metal connecting wire and a second metal connecting wire which are respectively electrically connected with the first injection region and the second injection region;
and forming a first external connection key and a second external connection key, wherein the first external connection key is electrically connected with the first metal connecting wire, and the second external connection key is electrically connected with the second metal connecting wire.
In some embodiments, etching is used to remove portions of the stacked first and second metal layers.
In some embodiments, the removing the partially stacked first metal layer and second metal layer by etching includes:
a first graphical protective layer is arranged on the surface of the second metal layer;
and etching the second metal layer exposed from the first patterned protection layer, and etching the first metal layer corresponding to the exposed part of the second metal layer to form the first metal connecting wire and the second metal connecting wire.
In some embodiments, disposing a first patterned protective layer on a surface of the second metal layer includes:
forming a photoresist layer on the surface of the second metal layer;
and setting a graphical photoetching plate on the surface of the photoresist layer, and exposing to form the first graphical protective layer.
In some embodiments, after forming the first metal connection line and the second metal connection line, the method includes:
removing the first patterned protective layer;
and forming a passivation layer on the surface of the first metal connecting wire, which is away from the substrate body, the surface of the second metal connecting wire, which is away from the substrate body, and the surface of the exposed insulating layer.
In some embodiments, after forming the passivation layer, the method includes:
forming a first through hole exposing the first metal connection line and a second through hole exposing the second metal connection line at a preset position of the passivation layer;
and forming a first external connection key electrically connected with the first metal connection wire at the first through hole, and forming a second external connection key electrically connected with the second metal connection wire at the second through hole.
In some embodiments, the forming a first via exposing the first metal connection line at a preset position of the passivation layer, and the second via exposing the second metal connection line includes:
forming a second patterned protective layer on the surface of the passivation layer; the second patterned protective layer is provided with a notch exposing part of the passivation layer;
and removing the passivation layer exposed from the notch to form the first through hole and the second through hole.
In some embodiments, after forming the first external connection key and the second external connection key, the method includes:
and removing the second patterned protective layer.
In some embodiments, the first metal layer and the second metal layer are etched by wet etching.
In some embodiments, the first metal layer is made of aluminum metal or aluminum alloy, the second metal layer is made of titanium-copper alloy, and the first external connection bond and the second external connection bond are made of tin; and/or the number of the groups of groups,
forming the second metal layer on the surface of the first metal layer by adopting a physical vapor deposition coating technology; and/or the number of the groups of groups,
and forming the first external connection bond and the second external connection bond by adopting a reflow soldering process.
Based on the above technical scheme, after the first metal layer is formed, the second metal layer is formed on the surface of the first metal layer, and then when the first metal layer is removed, namely, the second metal layer part laminated with the first metal layer to be removed is removed.
Drawings
FIG. 1 is a flow chart of a method for fabricating a photodetector according to an embodiment of the present invention;
fig. 2 to 8 are process diagrams of a manufacturing process of a photodetector according to an embodiment of the invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Referring to fig. 1, an embodiment of the invention provides a method for manufacturing a photodetector, which includes steps S101 to S109 as follows:
in step S101, a substrate is provided; the substrate comprises a substrate body with a first conductivity type and an insulating layer positioned on one side of the substrate body; the substrate body is provided with a first injection region with a first conductivity type and a second injection region with a second conductivity type, which face the insulating layer, and the doping concentration of the first injection region and the doping concentration of the second injection region are both larger than those of the substrate body; a first groove exposing the first injection region and a second groove exposing the second injection region are formed on the insulating layer;
in step S103, a first metal layer is formed on the surfaces of the first groove, the second groove and the insulating layer facing away from the substrate body;
in step S105, a second metal layer is formed on the surface of the first metal layer;
in step S107, removing part of the stacked first metal layer and second metal layer to form a first metal connection line and a second metal connection line electrically connected to the first injection region and the second injection region, respectively;
in step S109, a first external connection key and a second external connection key are formed, wherein the first external connection key is electrically connected to the first metal connection line, and the second external connection key is electrically connected to the second metal connection line.
According to the manufacturing method of the photoelectric detector, after the first metal layer is formed, the second metal layer is formed on the surface of the first metal layer, and then when the first metal layer is removed, namely, the second metal layer part which is overlapped with the first metal layer to be removed is removed.
The method for manufacturing the photodetector provided in the present application will be described in detail with reference to fig. 2 to 8.
As shown in fig. 2, in step S101, a substrate 10 is provided. The substrate 10 includes a substrate body 11 having a first conductive type and an insulating layer 15 located at one side of the substrate body 11. The substrate body 11 is provided with a first implanted region 13 of a first conductivity type and a second implanted region 14 of a second conductivity type towards the insulating layer 15. The doping concentration of the first implantation region 13 and the doping concentration of the second implantation region 14 are both greater than the doping concentration of the substrate body 11. A first groove 151 exposing the first injection region 13 and a second groove 152 exposing the second injection region 14 are formed on the insulating layer 15.
The first conductivity type may be N-type material and the second conductivity type may be P-type material. The first implantation region 13 and the second implantation region 14 may be formed by implantation and diffusion. The second injection region 14 here forms a photosensitive region, and the side of the substrate body 11 facing away from the insulating layer 15 is the light entry side. The photo-detector formed by the subsequent preparation is a back-illuminated photo-detector, and incident light is injected from one side of the substrate body 11 away from the insulating layer 15, so that the back-illuminated photo-detector works.
In some embodiments, before forming the first implant region 13, a third implant region 12 having the first conductivity type may be formed in the substrate body 11, and the first implant region 13 may be formed in the third implant region 12. Wherein the doping concentration of the third implantation region 12 is greater than the doping concentration of the substrate body but less than the doping concentration of the first implantation region 13.
As shown in fig. 3, in step S103, a first metal layer 20 is formed on the surfaces of the first and second grooves 151 and 152 and the insulating layer 15 facing away from the substrate body 11.
The material of the first metal layer 20 is Aluminum (AL) or an aluminum alloy. The first metal layer 20 may be formed by physical vapor deposition (pvd) plating, and may be formed by vacuum evaporation plating, vacuum sputtering plating, or vacuum ion plating, as the case may be.
As shown in fig. 4, in step S105, the second metal layer 30 is formed on the surface of the first metal layer 20.
The second metal layer 30 has good adhesion with the first metal layer 20, and after the second metal layer 30 is formed, the second metal layer 30 and the first metal layer 20 can be adhered together. In some embodiments, the material of the second metal layer 30 may be a titanium copper alloy (Ti/Cu alloy).
The second metal layer 30 may be formed on the surface of the first metal layer 20 using a physical vapor deposition (Physical Vapor Deposition, PVD) plating technique. Specifically, the coating can be formed by selecting a vacuum evaporation coating mode, a vacuum sputtering coating mode or a vacuum ion coating mode according to specific conditions.
The second metal layer 30 of titanium copper alloy has better adhesion to the subsequently disposed external bond (e.g., solder ball) relative to the first metal layer 20. The provision of the second metal layer 30 is advantageous for improving the bonding firmness of the external connection bond when the external connection bond is provided in the subsequent PAD area (i.e., PAD area). So that the second metal layer 30 serves as a metal adhesive layer to bond the first metal layer 20 and the subsequent external connection bonds well.
As shown in fig. 5, in step S107, the partially stacked first metal layer 20 and second metal layer 30 are removed, and a first metal connection line 231 and a second metal connection line 232 electrically connected to the first implantation region 13 and the second implantation region 14, respectively, are formed.
In some embodiments, in this step S107, the partially stacked first metal layer 20 and second metal layer 30 may be removed by using an etching method.
In some embodiments, the stacked first and second metal layers 20 and 30 may be etched using a wet etch. Compared with the dry etching method, the wet etching method is adopted to avoid the damage of the first metal layer 20 and the second metal layer 30 caused by the larger impact force of the particles in the dry etching reagent, thereby being beneficial to reducing the generation of dark current of the formed photoelectric detector and improving the yield and the service performance of the photoelectric detector. Of course, in other embodiments, the first metal layer and the second metal layer may also be etched by dry etching.
It should be noted that, because the materials of the first metal layer 20 and the second metal layer 30 are different, the etchants with different compositions may be selected to etch the first metal layer 20 and the second metal layer 30 according to the specific materials of the first metal layer 20 and the second metal layer 30,
the removing of the partially stacked first metal layer 20 and second metal layer 30 by the etching method may be specifically achieved by the following step S1071 and step S1072:
in step S1071, a first patterned protective layer (not shown) is provided on the surface of the second metal layer 30.
In step S1072, the second metal layer 30 exposed from the first patterned protection layer is etched, and the first metal layer 20 corresponding to the exposed portion of the second metal layer 30 is etched, so as to form the first metal connection line 231 and the second metal connection line 232. The first metal connection line 231 and the second metal connection line 232 may be understood as stacked first metal layers and second metal layer portions remaining after etching.
In some embodiments, the step S1071 may be implemented by the following steps S711 and S712:
in step S711, a photoresist layer (not shown) is formed on the surface of the second metal layer 30.
In step S712, a patterned photolithography mask is disposed on the surface of the photoresist layer and exposed to protect the desired area, and the undesired area is removed by exposure, thereby forming the first patterned protection layer.
Here, a photoresist layer covering the surface of the second metal 30 may be formed on the surface of the second metal layer 30 by spin-coating a photoresist material.
The first patterned protective layer is an imaged photoresist layer structure.
Accordingly, after step S107, before step S109, the manufacturing method of the photodetector includes the following steps S1081 and S1082:
in step S1081, the first patterned protection layer is removed.
In step S1082, a passivation layer 40 is formed on the surface of the first metal connection line 231 facing away from the substrate body 11, the surface of the second metal connection line 232 facing away from the substrate body 11, and the surface of the exposed insulating layer 15, as shown in fig. 6.
The passivation layer 40 formed herein entirely encapsulates the first metal connection line 231, the second metal connection line 232, and the exposed insulating layer 15, forming a flat plate-like structure.
It should be noted that, in this embodiment, the first patterned protection layer is disposed on the surface of the second metal layer 30 to form the first metal connection line 231 and the second metal connection line 232, so that the same protection layer is used to implement etching of the two metal layers, that is, the same photolithography mask is used to implement etching of the two metal layers. Compared with the implementation mode of forming the second metal layer independently after forming the passivation layer and etching the second metal layer independently in the related art, the preparation process is simple, the use of one layer of photoetching plate is reduced, and the control of the preparation cost of the photoelectric detector is facilitated.
As shown in fig. 8, in step S109, the first external connection key 51 and the second external connection key 52 are formed. The first external connection key 51 is electrically connected to the first metal connection line 231, and the second external connection key 52 is electrically connected to the second metal connection line 232.
For the embodiment in which the passivation layer 40 is formed to entirely encapsulate the first metal connection line 231, the second metal connection line 232, and the exposed insulating layer 15, the step S109 may be implemented by the following steps S1091 and S1092:
in step S1091, a first via 401 exposing the first metal connection line 231 and a second via 402 exposing the second metal connection line 232 are formed at a predetermined position of the passivation layer 40, as shown in fig. 7.
In some embodiments, the step S1091 may specifically include the following steps S911 and S912:
in step S911, a second patterned protective layer is formed on the surface of the passivation layer 40. The second patterned protective layer is provided with a notch exposing part of the passivation layer.
In some embodiments, the second patterned passivation layer is formed in the step S911, and may be formed in a similar manner to the first patterned passivation layer. Specifically, a photoresist layer (not shown) may be formed on the outer surface of the passivation layer 40 by spin-coating a photoresist material. And setting a corresponding graphical photoetching plate on the surface of the photoresist layer and exposing to form a required second graphical protective layer. The second patterned protective layer is also a patterned photoresist layer structure.
In step S912, the passivation layer exposed from the notch is removed, and the first via 401 and the second via 402 are formed.
Here, the first via 401 and the second via 402 may be formed by dry etching, wet etching, or mechanical punching, which is not limited in this application and may be set according to specific situations. Here, the portion of the first metal connection line 231 exposed from the first via 401 and the portion of the second metal connection line 232 exposed from the second via 402 are PAD regions (i.e., PAD regions) for providing external connection bonds.
In step S1092, a first external connection key 51 electrically connected to the first metal connection line 231 is formed at the first via 401, and a second external connection key 52 electrically connected to the second metal connection line 232 is formed at the second via 402.
The top ends of the first external connection key 51 and the second external connection key 52 may extend beyond the passivation layer 40, so as to facilitate subsequent electrical connection with electrical connection portions of other structures. Of course, the outer ends of the first outer connection key and the second outer connection key may not extend beyond the passivation layer, and may be set according to the specific situation, which is not limited in this application.
In some embodiments, the material of the first external connection key 51 and the second external connection key 52 is tin.
In some embodiments, the first and second external connection keys 51 and 52 may be formed using a reflow process. For example, the first and second external connection keys 51 and 52 may be solder balls formed using a reflow process. Of course, the present invention is not limited to this, and may be configured according to circumstances.
Further, after forming the first via 401 and the second via 402 using the second patterned protective layer and forming the first external connection key 51 and the second external connection key 52 in step S1092, the method for manufacturing a photodetector further includes the following step S110:
in step S110, the second patterned protection layer is removed.
It should be noted that, in some other embodiments, after step S107, a first external connection key electrically connected to the first metal connection line and a second external connection key electrically connected to the second metal connection line may be formed at a predetermined position. And forming passivation layers on the surfaces of the exposed first metal connection lines, the exposed second metal connection lines and the exposed insulating layer. The present application is not limited to this, and may be set according to specific circumstances.
Based on the above description of the method for manufacturing the photodetector, in the present application, after the first metal layer (i.e., the aluminum metal or aluminum alloy layer) is formed, the second metal layer (titanium copper alloy thin film layer) is formed on the surface of the first metal layer, and thus, when the first metal layer is removed, the portion of the second metal layer laminated with the first metal layer to be removed can be removed. Namely, the etching of the two metal layers of the first metal layer and the second metal layer is realized by adopting one photomask. In addition, after the first through hole 401 and the second through hole 402 are formed in the passivation layer (i.e. after the PAD area is formed), the first and the second external connection bonds (such as tin balls) can be directly arranged in the PAD area.
Those skilled in the art will appreciate that the drawing is merely a schematic representation of one preferred embodiment and that the modules or processes in the drawing are not necessarily required to practice the invention. The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method of manufacturing a photodetector, comprising:
providing a substrate; the substrate comprises a substrate body with a first conductivity type and an insulating layer positioned on one side of the substrate body; the substrate body is provided with a first injection region with a first conductivity type and a second injection region with a second conductivity type, which face the insulating layer, and the doping concentration of the first injection region and the doping concentration of the second injection region are both larger than those of the substrate body; a first groove exposing the first injection region and a second groove exposing the second injection region are formed on the insulating layer;
forming a first metal layer on the surfaces of the first groove, the second groove and the insulating layer, which are away from the substrate body;
forming a second metal layer on the surface of the first metal layer;
removing part of the laminated first metal layer and second metal layer to form a first metal connecting wire and a second metal connecting wire which are respectively electrically connected with the first injection region and the second injection region;
and forming a first external connection key and a second external connection key, wherein the first external connection key is electrically connected with the first metal connecting wire, and the second external connection key is electrically connected with the second metal connecting wire.
2. The method of manufacturing a photodetector of claim 1, wherein the partially stacked first metal layer and second metal layer are removed by etching.
3. The method of manufacturing a photodetector of claim 2, wherein said removing the partially stacked first metal layer and second metal layer by etching comprises:
a first graphical protective layer is arranged on the surface of the second metal layer;
and etching the second metal layer exposed from the first patterned protection layer, and etching the first metal layer corresponding to the exposed part of the second metal layer to form the first metal connecting wire and the second metal connecting wire.
4. The method of manufacturing a photodetector device of claim 3, wherein said disposing a first patterned protective layer on a surface of said second metal layer comprises:
forming a photoresist layer on the surface of the second metal layer;
and setting a graphical photoetching plate on the surface of the photoresist layer, and exposing to form the first graphical protective layer.
5. The method of manufacturing a photodetector of claim 3, wherein after forming said first metal connection line and said second metal connection line, said method comprises:
removing the first patterned protective layer;
and forming a passivation layer on the surface of the first metal connecting wire, which is away from the substrate body, the surface of the second metal connecting wire, which is away from the substrate body, and the surface of the exposed insulating layer.
6. The method of manufacturing a photodetector of claim 5, wherein after forming said passivation layer, said method comprises:
forming a first through hole exposing the first metal connection line and a second through hole exposing the second metal connection line at a preset position of the passivation layer;
and forming a first external connection key electrically connected with the first metal connection wire at the first through hole, and forming a second external connection key electrically connected with the second metal connection wire at the second through hole.
7. The method of manufacturing a photodetector of claim 6, wherein said forming a first via exposing said first metal connection line at a predetermined location of said passivation layer, and a second via exposing said second metal connection line comprises:
forming a second patterned protective layer on the surface of the passivation layer; the second patterned protective layer is provided with a notch exposing part of the passivation layer;
and removing the passivation layer exposed from the notch to form the first through hole and the second through hole.
8. The method of manufacturing a photodetector of claim 7, wherein after forming said first external connection key and said second external connection key, said method comprises:
and removing the second patterned protective layer.
9. The method of manufacturing a photodetector device of claim 2, wherein said first metal layer and said second metal layer are etched by wet etching.
10. The method of manufacturing a photodetector of claim 1, wherein the first metal layer is made of aluminum metal or aluminum alloy, the second metal layer is made of titanium-copper alloy, and the first external connection bond and the second external connection bond are made of tin; and/or the number of the groups of groups,
forming the second metal layer on the surface of the first metal layer by adopting a physical vapor deposition coating technology;
and/or the number of the groups of groups,
and forming the first external connection bond and the second external connection bond by adopting a reflow soldering process.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005222966A (en) * | 2004-02-03 | 2005-08-18 | Citizen Watch Co Ltd | Semiconductor device and manufacturing method thereof |
| CN1714454A (en) * | 2002-11-18 | 2005-12-28 | 浜松光子学株式会社 | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
| CN114300495A (en) * | 2021-12-29 | 2022-04-08 | 杭州海康威视数字技术股份有限公司 | Photodiode, photoelectric detector and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7635643B2 (en) * | 2006-04-26 | 2009-12-22 | International Business Machines Corporation | Method for forming C4 connections on integrated circuit chips and the resulting devices |
| WO2018187124A1 (en) * | 2017-04-07 | 2018-10-11 | Microchip Technology Incorporated | A semiconductor package having exposed redistribution layer features and related methods of packaging and testing |
| US11121101B2 (en) * | 2020-01-30 | 2021-09-14 | International Business Machines Corporation | Flip chip packaging rework |
-
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Patent Citations (3)
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| CN1714454A (en) * | 2002-11-18 | 2005-12-28 | 浜松光子学株式会社 | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
| JP2005222966A (en) * | 2004-02-03 | 2005-08-18 | Citizen Watch Co Ltd | Semiconductor device and manufacturing method thereof |
| CN114300495A (en) * | 2021-12-29 | 2022-04-08 | 杭州海康威视数字技术股份有限公司 | Photodiode, photoelectric detector and manufacturing method thereof |
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