TW201442260A - Solar cell and manufacturing method thereof - Google Patents

Abstract

A solar cell and a manufacturing method thereof are provided, wherein the manufacturing method includes following steps. A photoelectric conversion layer is provided. An transparent layer is formed on a first surface and a second surface of the photoelectric conversion layer, the second surface is opposite to the first surface, wherein the transparent layer located on the first surface has an electrode area and a non-electrode area connecting to the electrode area. A mask layer is formed on the transparent layer located on the first surface to shelter the non-electrode area and to expose the electrode area. A seed layer and an electrode layer are formed in succession within the electrode area, wherein the electrode layer is in direct contact with the transparent layer located on the first surface and located between the electrode layer and the transparent layer located on the first surface. The mask layer is removed. Another seed layer and another electrode layer are formed in succession on the second surface of the photoelectric conversion layer.

Description

Solar cell and method of manufacturing same

The present invention relates to a photoelectric conversion element and a method of fabricating the same, and more particularly to a solar cell and a method of fabricating the same.

In recent years, environmental awareness has risen. In response to the shortage of petrochemical energy and the impact of the use of petrochemical energy on the environment, the research and development of alternative energy and renewable energy has become a hot topic, among which solar cells are the most popular. . Solar cells convert solar energy directly into electrical energy, and do not generate harmful substances such as carbon dioxide or nitride during power generation, and do not pollute the environment.

Solar cells typically include a photoelectric conversion layer and electrode layers on either side of the photoelectric conversion layer. In general, in addition to the effective collection of the carrier, the electrode layer disposed on the light receiving surface should minimize the proportion of the electrode layer shielding the incident light. Therefore, the electrode layer on the light receiving surface is generally designed to have a special pattern structure, for example, a plurality of very fine finger electrodes extending from a bus bar. It is conventional to form the electrode pattern (referring to the bus electrode and the finger electrode), usually by screen printing with a co-sintering process to pattern the gel-like electrode layer The material solidifies into an electrode pattern.

However, the co-sintering process is a high-temperature process (over 700 degrees Celsius), which easily damages the film layer in the solar cell or modifies the film layer in the solar cell, for example, a Hetero-junction-based solar cell. The amorphous germanium semiconductor layer is crystallized. In addition, the width of the finger electrode or the bus electrode in the electrode layer is also limited by the high temperature process, and cannot be further reduced, thereby limiting the photoelectric conversion efficiency of the solar cell. On the other hand, if the temperature of the co-sintering process is lowered, the quality of the electrode layer is affected. Therefore, how to improve the reliability of the solar cell (that is, how to reduce the damage of the electrode layer to the film layer in the solar cell or to avoid the film layer modification in the solar cell), and further improve the photoelectric conversion efficiency of the solar cell. It is a trend in the future.

The present invention provides a method for producing a solar cell, which can produce a solar cell having high reliability and excellent photoelectric conversion efficiency.

The present invention provides a solar cell which has high reliability and good photoelectric conversion efficiency.

A method of manufacturing a solar cell of the present invention comprises the following steps. A photoelectric conversion layer is provided. A light transmissive layer is respectively formed on the first surface and the second surface opposite to the photoelectric conversion layer, wherein the light transmissive layer on the first surface has an electrode region and at least one non-electrode region adjacent to the electrode region. A mask layer is formed on the light transmissive layer on the first surface to shield the non-electrode region and expose the electrode region. Seed layers are successively formed in the electrode region And an electrode layer, wherein the seed layer is in direct contact with the light transmissive layer on the first surface and is located between the light transmissive layer and the electrode layer. Remove the mask layer. Another seed layer and another electrode layer are successively formed on the light transmissive layer on the second surface of the photoelectric conversion layer.

In an embodiment of the invention, the photoelectric conversion layer is a PN junction structure formed by stacking a P-type semiconductor layer and an N-type semiconductor layer, or is formed by stacking a P-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer. PIN junction structure.

In an embodiment of the invention, the mask layer is in direct contact with the light transmissive layer on the first surface, and the material of the mask layer comprises a polymer.

In an embodiment of the invention, the light transmissive layer is a transparent conductive layer, and the material of the light transmissive layer comprises a metal oxide.

In an embodiment of the invention, the light transmissive layer is an insulating layer, and the material of the light transmissive layer comprises tantalum oxide, tantalum nitride, hafnium oxynitride, hafnium aluminum oxide or a stacked layer of at least two materials. The seed layer on the light transmissive layer diffuses into the electrode region and is electrically connected to the photoelectric conversion layer.

In an embodiment of the invention, the seed layer and the material of the other seed layer comprise silver, nickel, aluminum, titanium, cobalt or a mixture of at least two materials, nickel telluride, cobalt telluride, titanium telluride or at least the above A method of stacking two materials, and forming a seed layer, another seed layer, an electrode layer, and another electrode layer includes electroless, electroplating, physical Vapor Deposition (PVD), or Chemical Vapor Deposition (CVD).

In an embodiment of the invention, the electrode layer and the other electrode layer are A first electrode layer and a second electrode layer are respectively included. The first electrode layer covers the seed layer, and the second electrode layer covers the first electrode layer. The material of the first electrode layer includes silver, nickel, copper, aluminum, titanium, cobalt or a mixture of at least two materials, nickel antimonide, cobalt telluride or titanium telluride, and the material of the second electrode layer includes tin, silver or nickel.

In an embodiment of the invention, the method of forming another seed layer and the other electrode layer is the same as the method of forming the seed layer and the electrode layer, respectively.

In an embodiment of the invention, the other light transmissive layer has an electrode region and at least a non-electrode region adjacent to the electrode region, and is further included on the second surface before forming another seed layer and another electrode layer. Another mask layer is formed on the upper light transmissive layer, and the other mask layer shields the non-electrode region and exposes the electrode region.

A solar cell of the present invention includes a photoelectric conversion layer, a light transmissive layer, a seed layer, an electrode layer, another light transmissive layer, another seed layer, and another electrode layer. The light transmissive layer is disposed on the first surface of the photoelectric conversion layer, wherein the light transmissive layer has an electrode region and at least one non-electrode region adjacent to the electrode region. The seed layer is disposed in the electrode region and exposes the non-electrode region of the light transmissive layer. The electrode layer is disposed on the seed layer. Another light transmissive layer is disposed on the second surface of the photoelectric conversion layer relative to the first surface. Another seed layer is disposed on the other light transmissive layer. The other electrode layer is disposed on another seed layer.

In an embodiment of the invention, the photoelectric conversion layer is a PN junction structure formed by stacking a P-type semiconductor layer and an N-type semiconductor layer, or is formed by stacking a P-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer. PIN junction structure.

In an embodiment of the invention, the light transmissive layer is a transparent conductive layer, and the material of the light transmissive layer comprises a metal oxide.

In an embodiment of the invention, the light transmissive layer is an insulating layer and is transparent. The material of the light layer includes ruthenium oxide, tantalum nitride, ruthenium oxynitride, ruthenium aluminum oxide or a stacked layer of at least two of the above materials. The seed layer on the light transmissive layer diffuses into the electrode region and is electrically connected to the photoelectric conversion layer.

In an embodiment of the invention, the seed layer and another seed layer are The material includes silver, nickel, aluminum, titanium, cobalt or a mixture of at least two of the above materials, nickel telluride, cobalt telluride, titanium telluride or a stacked layer of at least two of the above materials.

In an embodiment of the invention, the electrode layer and the other electrode layer are A first electrode layer and a second electrode layer are respectively included. The first electrode layer covers the seed layer, and the second electrode layer covers the first electrode layer. The material of the first electrode layer includes silver, nickel, copper, aluminum, titanium, cobalt or a mixture of at least two materials, nickel antimonide, cobalt telluride or titanium telluride, and the material of the second electrode layer includes tin, silver or nickel.

In an embodiment of the invention, the other light transmissive layer has an electrode region And at least one non-electrode region adjacent to the electrode region, and another seed layer disposed in the electrode region, in direct contact with the other light transmissive layer, and exposing the non-electrode region of the other light transmissive layer.

Based on the above, the present invention precedes the formation of the light transmissive layer before forming the electrode layer The mask layer is masked to shield the non-electrode regions and expose the electrode regions (i.e., the regions where the electrode layers are to be formed), and the mask layer is removed after the electrode layers are formed. In this way, the present invention can modulate the electrode pattern (the junction electrode of the electrode layer and the finger electrode) through the pattern design of the mask layer, and the electrode pattern can be formed without the screen printing and the co-sintering process. Therefore, the present invention can avoid damage or modification of the solar cell due to the co-sintering process, and the solar cell has high reliability. On the other hand, the invention also The width of the electrode pattern can be further reduced without being limited by the high temperature process, thereby making the solar cell have good photoelectric conversion efficiency.

The above described features and advantages of the invention will be apparent from the following description.

100, 200, 300, 400‧‧‧ solar cells

110,410‧‧‧ photoelectric conversion layer

112‧‧‧矽 substrate

114A, 114B‧‧‧ Passivation layer

116A‧‧‧First type semiconductor layer

116B‧‧‧Second type semiconductor layer

120A, 120B, 420A, 420B‧‧‧ light transmission layer

130, 430‧‧ ‧ cover layer

140A, 140B, 140C, 440A, 440B, 440C‧‧‧ seed layers

150A, 150B, 150C, 450A, 450B, 450C‧‧‧ electrode layers

152, 156, 452, 456‧‧‧ first electrode layer

154, 158, 454, 458‧‧‧ second electrode layer

A1‧‧‧electrode zone

A2‧‧‧ non-electrode area

S1‧‧‧ first surface

S2‧‧‧ second surface

1A to 1G are schematic cross-sectional views showing a manufacturing process of a solar cell according to an embodiment of the present invention.

2A to 2F are top schematic views of Figs. 1A to 1F.

3 is a schematic cross-sectional view showing a solar cell according to another embodiment of the present invention.

4A to 4F are schematic cross-sectional views showing a manufacturing process of a solar cell according to still another embodiment of the present invention.

Fig. 5 is a cross-sectional view showing a solar cell according to still another embodiment of the present invention.

1A to 1G are schematic cross-sectional views showing a manufacturing process of a solar cell according to an embodiment of the present invention. 2A to 2F are top plan views of the solar cell of the embodiment of Figs. 1A to 1F. In FIGS. 2A to 2F, if the boundary of the film layer substantially overlaps with other film layers, only the film layer located at the uppermost layer is indicated in the top view. Therefore, FIG. 2A to FIG. 2F omits the indication of a part of the film layer, so please refer to the corresponding cross-sectional schematic view (ie, FIG. 1A to FIG. 1F).

Referring to FIG. 1A and FIG. 2A, a photoelectric conversion layer 110 is provided, wherein the photoelectric The conversion layer 110 has opposing first and second surfaces S1 and S2. The first surface S1 is, for example, a light receiving surface, that is, a surface facing external light (not shown, for example, sunlight) to absorb photons, and the second surface S2 is, for example, a non-light receiving surface, that is, a surface facing away from external light. .

The photoelectric conversion layer 110 may be a P-type semiconductor layer and an N-type semiconductor layer A PN junction structure formed by stacking, or a PIN junction structure formed by stacking a P-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer.

For example, the photoelectric conversion layer 110 includes, for example, a germanium substrate 112, passivated. The layers 114A and 114B, the first type semiconductor layer 116A and the second type semiconductor layer 116B, wherein the first type semiconductor layer 116A and the second type semiconductor layer 116B are respectively located on opposite surfaces of the germanium substrate 112, and the passivation layer 114A is located at the first The first semiconductor layer 116A is between the germanium substrate 112 and the passivation layer 114B is between the second semiconductor layer 116B and the germanium substrate 112. In the present embodiment, the first type semiconductor layer 116A has a contact surface with the passivation layer 114A, and the surface of the first type semiconductor layer 116A with respect to the contact surface is the first surface S1 of the photoelectric conversion layer 110. On the other hand, the second type semiconductor layer 116B and the passivation layer 114B also have a contact surface, and the surface of the second type semiconductor layer 116B with respect to the contact surface is the second surface S2 of the photoelectric conversion layer 110.

In the present embodiment, the crucible substrate 112 is, for example, a P-type crucible substrate or an N-type crucible. Substrate. The passivation layers 114A, 114B, the first type semiconductor layer 116A, and the second type semiconductor layer 116B are, for example, amorphous germanium semiconductor layers, and are formed, for example, by plasma gain chemical vapor deposition. First type semiconductor layer 116A and second type semiconductor layer 116B One of them is an N-type semiconductor layer, and the other of the first type semiconductor layer 116A and the second type semiconductor layer 116B is a P-type semiconductor layer.

It should be noted that although the photoelectric conversion layer of a silicon-based solar cell is exemplified in the present embodiment, the type of the photoelectric conversion layer depends on the type of the solar cell, and thus the present invention does not limit the photoelectricity. The type of conversion layer.

In addition, in order to improve the ability to absorb photons and reduce the reflection of external light, the present embodiment can also selectively surface-weld the light-receiving surface of the base material 112 (for example, the surface of the base material 112 and the passivation layer 114A). The process is formed to form a textured surface. The surface weaving process is, for example, but not limited to, carried out using a potassium hydroxide (KOH) solution.

Referring to FIG. 1B and FIG. 2B, a light transmissive layer 120A is formed on the first surface S1 of the photoelectric conversion layer 110, and another light transmissive layer 120B is formed on the second surface S2 of the photoelectric conversion layer 110, wherein the light transmissive layer 120A A plurality of non-electrode regions A2 having an electrode region A1 and an adjacent electrode region A1. Here, the electrode region A1 is a region where an electrode layer (not shown, which will be described later) is to be disposed, and the non-electrode region A2 is a region which is not covered by the electrode layer after forming the electrode layer, that is, in formation. After the electrode layer, the electrode layer exposes the non-electrode region A2 of the non-transmissive layer 120A.

The light transmissive layers 120A, 120B may be transparent conductive layers or insulating layers. In the present embodiment, the light transmissive layers 120A, 120B are exemplified by a transparent conductive layer. The material of the light transmissive layers 120A, 120B may be a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide, or a stacked layer of at least two of the above. Further, a light transmissive layer 120A is formed, The method of 120B is, for example, an evaporation method, a sputtering method, or other method suitable for depositing a metal oxide.

Referring to FIG. 1C and FIG. 2C, a mask layer 130 is formed on the light transmissive layer 120A. The mask layer 130 is in direct contact with the light transmissive layer 120A, and the mask layer 130 shields the non-electrode region A2 and exposes the electrode region A1. Further, the mask layer 130 is, for example, a plurality of island structures. Further, the material of the mask layer 130 includes a polymer. For example, the material of the mask layer 130 is, for example, photoresist, and the method of forming the mask layer 130 of the island structure is, for example, by spray, screen printing, spin coating. The method further applies the mask layer photoresist to the light transmissive layer 120A, and can be softly baked, exposed, developed, hard baked, and photoresisted or directly transferred according to the material of the mask layer. The steps are to pattern the photoresist on the light transmissive layer 120A.

Referring to FIG. 1D and FIG. 2D, a seed layer 140A is formed in the electrode region A1. The seed layer 140A is in direct contact with the light transmissive layer 120A. In this embodiment, the seed layer 140A can be used to enhance the adhesion of the light-transmitting layer 120A to the electrode layer to be formed later, and reduce the contact resistance between the electrode layer and the light-transmitting layer 120A, thereby making the solar cell have good. Photoelectric conversion efficiency. Further, the seed layer 140A can also serve as a seed for the electrode layer. Therefore, the material end of the seed layer 140A depends on the material of the electrode layer.

For example, when copper is selected as the material of the electrode layer, the seed layer 140A The material may be selected from a conductive material matching copper, such as silver, nickel, aluminum, titanium, cobalt or a mixture of at least two of the above materials, a metal halide (such as nickel telluride, cobalt telluride, titanium telluride) or at least two of the foregoing. The stacked layers of materials, and the method of forming the seed layer 140A may be by electroless plating, electroplating, physical vapor deposition or chemical vapor deposition. The material of the seed layer 140A is selectively formed in the electrode region A1. In this embodiment, if the seed layer 140A uses nickel, copper, aluminum, titanium, cobalt, nickel telluride, or metal halide (such as cobalt telluride or titanium telluride) to replace the use of silver or reduce the amount of silver used, Further reduce process costs.

Referring to FIG. 1E and FIG. 2E, an electrode layer 150A is formed in the electrode region A1, wherein the electrode layer 150A is located on the seed layer 140A, that is, the seed layer 140A is located between the light transmissive layer 120A and the electrode layer 150A.

The electrode layer 150A is located on the light receiving surface of the solar cell, and is adapted to collect the carriers emitted from the photoelectric conversion layer 110. Further, the electrode layer 150A may be a single layer or a laminated structure. In the present embodiment, the electrode layer 150A is exemplified by a laminated structure.

In detail, the electrode layer 150A of the present embodiment includes a first electrode layer 152 and a second electrode layer 154, wherein the first electrode layer 152 covers the seed layer 140A, and the second electrode layer 154 covers the first electrode layer 152. on. In addition to avoiding oxidation of the first electrode layer 152, the second electrode layer 154 can also improve the adhesion of the subsequent solar cell module during assembly.

In this embodiment, the material of the first electrode layer 152 is matched with the material of the seed layer 140A, that is, the material of the first electrode layer 152 may be silver, nickel, copper, aluminum, titanium, cobalt or at least two of the above. A mixture of materials, a material such as a metal halide (such as nickel telluride, cobalt telluride or titanium telluride) having a good electrical conductivity, and the material of the second electrode layer 154 may be a material which is less susceptible to oxidation such as tin, silver or nickel. Further, the method of forming the first electrode layer 152 and the second electrode layer 154 may be a method such as electroless plating, electroplating, physical vapor deposition, or chemical vapor deposition. Because copper is more conductive than silver Therefore, if copper is used as the material of the first electrode layer 152, in addition to reducing the process cost, the photoelectric conversion efficiency and the fill factor of the solar cell can be further improved.

Referring to FIG. 1F and FIG. 2F, the mask layer 130 is removed and the light transmissive layer is exposed. Non-electrode area A2 of 120A. In the present embodiment, the method of removing the mask layer 130 may be, but not limited to, removing the mask layer 130 on the non-electrode region A2 by wet etching.

It should be noted that in this embodiment, a grid-shaped electrode pattern is used (please refer to the figure). 2F) Illustratively, however, the electrode pattern may be determined depending on the actual application. This embodiment is not intended to define the shape of the electrode pattern, but rather to form the mask layer 130 on the light transmissive layer 120A before the electrode layer 150A is formed. The non-electrode region A2 is shielded and the electrode region A1 (i.e., the region where the electrode layer 150A is to be formed) is exposed, and the mask layer 130 is removed after the electrode layer 150A is formed. In this way, the embodiment can modulate the electrode pattern of the electrode layer 150A (the junction electrode and the finger electrode of the electrode layer) through the pattern design of the mask layer 130, without the conventionally known screen printing and A high temperature co-sintering process is performed to form an electrode pattern. Therefore, the present embodiment can avoid damage or modification of the solar cell due to the common high-temperature sintering process, and the solar cell has high reliability. On the other hand, the embodiment does not need to be limited to a high temperature process, and the width of the electrode pattern is further reduced, thereby enabling the solar cell to have good photoelectric conversion efficiency.

Referring to FIG. 1G, successively on the second surface S2 of the photoelectric conversion layer 110 Another seed layer 140B and another electrode layer 150B are formed (including the first electrode layer 156) And a second electrode layer 158). Here, the solar cell 100 of the present embodiment is initially completed.

In the present embodiment, the method of forming the seed layer 140B and the electrode layer 150B (including the first electrode layer 156 and the second electrode layer 158) and forming the seed layer 140A and the electrode layer 150A (including the first electrode layer 152 and the The method of the two-electrode layer 154) is the same. Before the seed layer 140B and the electrode layer 150B are formed, another mask layer (not shown) is further formed on the light-transmitting layer 120B, and the mask layer shields the light-transmitting layer. A non-electrode region (not shown) of 120B, and exposing an electrode region (not shown) of the light transmissive layer 120B. That is, the method for forming the seed layer 140B and the electrode layer 150B (including the first electrode layer 156 and the second electrode layer 158) in this embodiment may refer to FIG. 1C to FIG. 1F and corresponding descriptions thereof, and thus no further description is provided herein. .

It should be noted that the electrode layer 150B is located on the non-light-receiving surface of the solar cell 100, and therefore, the electrode layer 150B is not shielded from incident light. In other words, the pattern design of the electrode layer 150B can have greater design flexibility, and the pattern design of the seed layer 140B can also have greater design flexibility. In other embodiments not shown, the pattern design of the seed layer and the electrode layer on the non-light-receiving surface may be different from the pattern design of the seed layer and the electrode layer on the light-receiving surface, or, as shown in FIG. 3, the seed The layer 140C may be entirely overlying the light transmissive layer 120B, and the electrode layer 150C is also entirely overlying the seed layer 140C. In other words, in the embodiment of FIG. 3, the seed layer 140C and the electrode layer 150C of the solar cell 200 are not exposed to the light transmissive layer 120B. That is, after the light-transmissive layer 120B is formed, the seed layer 140C and the electrode layer 150C may be entirely covered on the light-transmitting layer 120B in succession, and the mask layer may be formed without defining the mask layer. The electrode region and the non-electrode region of the light layer 120B.

The above embodiment is an example in which the material of the light transmissive layer is a transparent conductive layer. Bright. The embodiment of the solar cell when the material of the light transmissive layer is an insulating layer will be described below with reference to FIGS. 4A to 4F.

4A to 4F are solar battery according to still another embodiment of the present invention. A schematic cross-section of the production process. Referring to FIG. 4A, a light transmissive layer 420A is formed on the first surface S1 of the photoelectric conversion layer 410, and another light transmissive layer 420B is formed on the second surface S2 of the photoelectric conversion layer 410, wherein the photoelectric conversion layer 410 is formed. For the configuration relationship of each film layer, reference may be made to FIG. 1A and its corresponding description, and details are not described herein again. The light transmissive layer 420A has an electrode area A1 and a plurality of non-electrode areas A2 adjacent to the electrode area A1.

In this embodiment, the light transmissive layer 420A may be an insulating layer, and the material of the light transmissive layer 420A includes yttrium oxide, tantalum nitride, hafnium oxynitride, hafnium aluminum oxide or a stacked layer of at least two materials, and is transparent. The light layer 420A is formed, for example, by physical vapor deposition, chemical vapor deposition, or electroplating at a low temperature to avoid damage or deterioration of other film layers that have been formed in the solar cell.

Referring to FIG. 4B, a mask layer 430 is formed on the light transmissive layer 420A. The mask layer 430 has a similar material, a forming method, and a film layer configuration relationship with the mask layer 130 in FIG. 1C. Narration.

Referring to FIGS. 4C and 4D, a seed layer 440A is formed in the electrode region A1. In this embodiment, the seed layer 440A is suitable for electrically connecting the electrode layer 450A (see FIG. 4D) to be formed and the photoelectric conversion layer 410, and can also serve as a seed crystal for the electrode layer. use. In detail, in the present embodiment, when the seed layer 440A is formed, the seed layer 440A on the light transmissive layer 420A is diffused into the electrode region A1. Therefore, by appropriately modulating the thickness of the light transmissive layer 420A and the seed layer 440A The material, that is, the seed layer 440A is electrically connected to the photoelectric conversion layer 410, without removing the light transmissive layer 420A. As such, after the electrode layer 450A is formed, the electrode layer 450A can also collect the carriers emitted from the photoelectric conversion layer 410. In other words, the material of the seed layer 440A of the present embodiment needs to have appropriate diffusibility. For example, the material of the seed layer 440A may be silver or silver and nickel, aluminum, cobalt, titanium or a mixture of at least two of the above, a metal halide (such as nickel telluride, cobalt telluride, titanium telluride), and the like. A stack of layers of material. When the material of the seed layer 440A is a single layer of silver, the electrode layer 450A may also be used with silver as its material, and when the material of the seed layer 440A is silver and nickel, aluminum, cobalt, titanium or a mixture of at least two of the above, When a metal germanide (such as nickel telluride, cobalt telluride or titanium telluride) is stacked on at least two of the above materials, the electrode layer 450A can be used in combination with nickel, aluminum, cobalt, titanium, copper, metal telluride (such as nickel telluride, germanium) Cobalt or titanium telluride) is used as its material. In addition, the method for forming the seed layer 440A and the electrode layer 450A in this embodiment can refer to FIG. 1D, FIG. 1E and its corresponding description, and details are not described herein again.

Referring to FIG. 4E, the mask layer 430 is removed, and the non-electrode region A2 of the light-transmitting layer 420A is exposed. The method for removing the mask layer 430 can be referred to FIG. 1F and its corresponding description, and details are not described herein. .

Referring to FIG. 4F, another seed layer 440B and another electrode layer 450B (including the first electrode layer 456 and the second electrode layer 458) are successively formed on the second surface S2 of the photoelectric conversion layer 410. Here, the solar cell of the embodiment is initially completed. 300. In the present embodiment, the method of forming the seed layer 440B and the electrode layer 450B (including the first electrode layer 456 and the second electrode layer 458) and forming the seed layer 440A and the electrode layer 450A (including the first electrode layer 452 and the The method of the two-electrode layer 454) is the same, so please refer to FIG. 4B to FIG. 4E and their corresponding descriptions, and details are not described herein again.

The electrode layer 450B is located in the solar cell 300 as in the electrode layer 150B. The non-light-receiving surface, therefore, the electrode layer 450B is not shielded from incident light. In other words, the pattern design of the electrode layer 450B can have greater design flexibility, and the pattern design of the seed layer 440B can also have greater design flexibility. In other embodiments not shown, the pattern design of the seed layer and the electrode layer on the non-light-receiving surface may be different from the pattern design of the seed layer and the electrode layer on the light-receiving surface, or, as shown in FIG. 5, solar energy The seed layer 440C of the battery 400 may be fully diffused into the light transmissive layer 420B, and the electrode layer 450C is entirely overlying the seed layer 440C. That is, after the light-transmitting layer 420B is formed, the seed layer 440C and the electrode layer 450C may be entirely covered on the light-transmitting layer 420B in succession, and the electrode region of the light-transmitting layer 420B may be defined without forming a mask layer. Non-electrode area.

In summary, the present invention forms a mask layer on the light transmissive layer before the electrode layer is formed to shield the non-electrode region and expose the electrode region (ie, the region where the electrode layer is to be formed), and after forming the electrode layer Remove the mask layer. In this way, the present invention can modulate the electrode pattern (the junction electrode of the electrode layer and the finger electrode) through the pattern design of the mask layer, and the electrode pattern can be formed without the screen printing and the co-sintering process. Therefore, the present invention can avoid damage to the solar cell due to the co-sintering process Harm or upgrade, so that solar cells have high reliability. On the other hand, the present invention does not need to be limited to a high temperature process, and the width of the electrode pattern is further reduced, thereby enabling the solar cell to have good photoelectric conversion efficiency.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some modifications and refinements, for example, without departing from the spirit and scope of the invention. The method of forming the electrode pattern described above (including the fabrication of the mask layer) is applied to a thin film solar cell or a III-V solar cell, and the scope of the present invention is defined by the scope of the appended claims.

100‧‧‧ solar cells

110‧‧‧ photoelectric conversion layer

112‧‧‧矽 substrate

114A, 114B‧‧‧ Passivation layer

116A‧‧‧First type semiconductor layer

116B‧‧‧Second type semiconductor layer

120A, 120B‧‧‧Transparent layer

140A, 140B‧‧‧ seed layer

150A, 150B‧‧‧electrode layer

152, 156‧‧‧ first electrode layer

154, 158‧‧‧ second electrode layer

S1‧‧‧ first surface

S2‧‧‧ second surface

Claims (16)

A method for manufacturing a solar cell, comprising: providing a photoelectric conversion layer; forming a light transmissive layer on a first surface and a second surface opposite to the photoelectric conversion layer, wherein the light transmissive layer on the first surface Having an electrode region and at least one non-electrode region adjacent to the electrode region; forming a mask layer on the light transmissive layer on the first surface, the mask layer shielding the non-electrode region and exposing the electrode region; Forming a sub-layer and an electrode layer successively in the electrode region, wherein the seed layer is in direct contact with the light transmissive layer on the first surface and is located between the light transmissive layer on the first surface and the electrode layer Removing the mask layer; and forming another seed layer and another electrode layer successively on the light transmissive layer on the second surface of the photoelectric conversion layer. The method for manufacturing a solar cell according to claim 1, wherein the photoelectric conversion layer is a PN junction structure formed by stacking a P-type semiconductor layer and an N-type semiconductor layer, or a P-type semiconductor layer, an intrinsic layer, A PIN junction structure formed by stacking N-type semiconductor layers. The method of manufacturing a solar cell according to claim 1, wherein the mask layer is in direct contact with the light transmissive layer on the first surface, and the material of the mask layer comprises a polymer. A method of manufacturing a solar cell according to claim 1, wherein The light transmissive layer is a transparent conductive layer, and the material of the light transmissive layer comprises a metal oxide. The method for manufacturing a solar cell according to claim 1, wherein the light transmissive layer is an insulating layer, and the material of the light transmissive layer comprises hafnium oxide, tantalum nitride, hafnium oxynitride, hafnium aluminum oxide or the above A stacked layer of at least two materials, the seed layer on the light transmissive layer diffuses into the electrode region and is electrically connected to the photoelectric conversion layer. The method for manufacturing a solar cell according to claim 1, wherein the seed layer and the material of the other seed layer comprise silver, nickel, aluminum, cobalt, titanium or a mixture of at least two materials, nickel telluride, Cobalt telluride, titanium telluride or a stacked layer of at least two of the above materials, and the method of forming the seed layer, the other seed layer, the electrode layer and the further electrode layer comprises electroless plating, electroplating, physical vapor deposition or chemistry Vapor deposition. The method for manufacturing a solar cell according to claim 1, wherein the electrode layer and the other electrode layer respectively comprise a first electrode layer and a second electrode layer, the first electrode layer covering the seed layer And the second electrode layer covers the first electrode layer, and the material of the first electrode layer comprises silver, nickel, aluminum, copper, cobalt, titanium or a mixture of at least two materials, nickel telluride, cobalt telluride Or titanium telluride, and the material of the second electrode layer includes tin, silver or nickel. The method of manufacturing a solar cell according to claim 1, wherein the method of forming the other seed layer and the other electrode layer is the same as the method of forming the seed layer and the electrode layer, respectively. A method of manufacturing a solar cell according to claim 8, wherein The other light transmissive layer has an electrode region and at least one non-electrode region adjacent to the electrode region, and is further included on the second surface before forming the other seed layer and the other electrode layer Another mask layer is formed on the light layer, and the other mask layer shields the non-electrode region and exposes the electrode region. A solar cell comprising: a photoelectric conversion layer; a light transmissive layer disposed on a first surface of the photoelectric conversion layer, wherein the light transmissive layer has an electrode region and at least one non-electrode region adjacent to the electrode region; a sub-layer disposed in the electrode region and exposing the non-electrode region of the light transmissive layer; an electrode layer disposed on the seed layer; and another light transmissive layer disposed on the photoelectric conversion layer relative to the first layer a second surface of a surface; another seed layer disposed on the other light transmissive layer; and another electrode layer disposed on the other seed layer. The solar cell according to claim 10, wherein the photoelectric conversion layer is a PN junction structure formed by stacking a P-type semiconductor layer and an N-type semiconductor layer, or a P-type semiconductor layer, an intrinsic layer, an N-type semiconductor The PIN junction structure formed by layer stacking. The solar cell of claim 10, wherein the light transmissive layer is a transparent conductive layer, and the material of the light transmissive layer comprises a metal oxide. The solar cell of claim 10, wherein the light source The layer is an insulating layer, and the material of the light transmissive layer comprises tantalum oxide, tantalum nitride, hafnium oxynitride, niobium aluminum oxide or a stacked layer of at least two materials, and the seed layer on the light transmissive layer is diffused And electrically connected to the electrode region. The solar cell of claim 10, wherein the seed layer and the material of the other seed layer comprise silver, nickel, aluminum, cobalt, titanium or a mixture of at least two materials, nickel telluride, cobalt telluride, Titanium telluride or a stacked layer of at least two of the above materials. The solar cell of claim 10, wherein the electrode layer and the other electrode layer respectively comprise a first electrode layer and a second electrode layer, the first electrode layer covering the seed layer, and The second electrode layer covers the first electrode layer, and the material of the first electrode layer comprises silver, nickel, aluminum, copper, cobalt, titanium or a mixture of at least two materials, nickel telluride, cobalt telluride or titanium telluride And the material of the second electrode layer comprises tin, silver or nickel. The solar cell of claim 10, wherein the other light transmissive layer has an electrode region and at least one non-electrode region adjacent to the electrode region, and the other seed layer is disposed in the electrode region, and The other light transmissive layer is in direct contact and exposes the non-electrode region of the other light transmissive layer.