CN111850699A - Surface treatment method of mono-like silicon wafer - Google Patents
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- CN111850699A CN111850699A CN201910352806.XA CN201910352806A CN111850699A CN 111850699 A CN111850699 A CN 111850699A CN 201910352806 A CN201910352806 A CN 201910352806A CN 111850699 A CN111850699 A CN 111850699A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004381 surface treatment Methods 0.000 title claims abstract description 17
- 238000005488 sandblasting Methods 0.000 claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000000654 additive Substances 0.000 claims abstract description 14
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000004580 weight loss Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 16
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 64
- 239000002253 acid Substances 0.000 description 15
- 239000003513 alkali Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/06—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for producing matt surfaces, e.g. on plastic materials, on glass
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
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Abstract
The invention discloses a surface treatment method of a mono-like silicon wafer. The method comprises the following steps: carrying out sand blasting treatment on the surface of the silicon wafer by using a sand blasting process, and then putting the silicon wafer into a mixed solution containing hydrofluoric acid, nitric acid and an additive for texturing; the sand blasting process is wet sand blasting, wherein the wet sand blasting refers to that sand blasting liquid mixed by water and abrasive is pressurized by a pump and is ejected out through a nozzle to uniformly impact the surface of the silicon wafer, so that the surface of the silicon wafer is provided with an uneven texturing surface. The sand blasting method has low cost and simple process, does not use chemicals, does not need to change the existing solar cell texturing process, can achieve the uniform suede effect of the cell generated by the silicon wafer processed by the method, and eliminates the color unevenness of the similar single crystal caused by the reflectivity difference among crystal grains with different sizes.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a surface treatment method of a mono-like silicon wafer.
Background
Mono-like silicon wafers, also known as quasi-monocrystalline or ingot-like monocrystalline silicon wafers, generally refer to a similar monocrystalline structure produced by polycrystalline ingot growth, and mixed-phase silicon wafers having a monocrystalline phase as a main component but containing a local polycrystalline phase exist on the surface of the same silicon wafer. Because the price of the monocrystalline silicon piece is reduced year by year, the polycrystalline silicon piece has no advantage of cost any more, and in recent years, polycrystalline silicon piece factories begin to invest in researching and developing low-cost and high-efficiency quasi-monocrystalline, the quality of the quasi-monocrystalline is better than that of polycrystal, the cost of the quasi-monocrystalline is close to that of ingot polycrystalline silicon, and the application of the quasi-monocrystalline is more and more extensive.
When a silicon wafer is used for manufacturing a solar cell, texturing processing is needed, at present, polycrystalline silicon is textured at a low temperature by using a mixed acid solution, isotropic etching (isotropic etching) is performed on the surface of the silicon wafer by using mixed acid to obtain a porous textured surface, monocrystalline silicon is textured at a high temperature by using an alkali solution, and anisotropic etching (isotropic etching) is performed on the surface of the silicon wafer by using alkali to obtain a pyramid textured surface. The quasi-monocrystalline silicon wafer has monocrystalline and polycrystalline crystal phases simultaneously, so that the wool making mode of selecting acid or alkali is determined by the area proportion of the monocrystalline crystal phase on the silicon wafer, when the monocrystalline proportion on the surface of the silicon wafer is larger, alkali wool making is adopted, and when the polycrystalline proportion on the surface of the silicon wafer is larger, acid wool making is adopted.
However, in the process of manufacturing the single-crystal-like cell piece, the acid texturing causes large loss of reflectivity of a single crystal region of the same single crystal; similarly, texturing with alkali will also increase the reflection loss of polycrystalline regions of the same single crystal piece. If the texturing process is not improved, the prepared battery piece can not exert the advantages of a monocrystalline silicon-like piece no matter alkaline texturing used by a monocrystal or acid texturing used by polycrystal is adopted, so that the appearance difference of the prepared battery piece is obvious, and the appearance uniformity of a component packaged in the later period is influenced.
In order to solve the problem of poor appearance of the mono-like silicon wafer: chinese patent CN102703989B provides a mixed acid solution and an alkali solution with a single crystal catalyst to carry out two-step texturing treatment on a mono-like silicon wafer; chinese patent CN102810594B provides a method for making different texture in different regions of a quasi-single crystal by using a mask method. However, since the degree of the mono-crystalline and polycrystalline regions of the mono-like silicon wafer is different, the above-mentioned method needs to be matched with the quality adjustment parameters and method of the mono-like silicon wafer, which is not only tedious in process but also unfavorable for the control of process stability. Chinese patents CN107681011A and CN103849937B provide a reactive ion etching method for making monocrystal-like texture. However, the reactive ion etching equipment has high cost and low yield, and is not suitable for industrial application. Chinese patent CN102403214A provides an alkaline etching solution of silver ions for etching at least one surface of a single crystal or mono-like silicon wafer to texture at least one surface of the single crystal or mono-like silicon wafer. However, the metal catalytic texturing method is complicated in process, and requires the use of metal elements such as silver or copper, and the use of an ammonia solution for removing the metal elements, which causes environmental pollution. In conclusion, the existing surface treatment method of the mono-like silicon wafer generally has the problems of complex process, high cost, environmental pollution and the like.
Disclosure of Invention
The invention aims to provide a surface treatment method of a mono-like silicon wafer, which has low cost, simple process and environmental protection.
The technical solution for realizing the purpose of the invention is as follows: a surface treatment method of a mono-like silicon wafer utilizes a sand blasting process, firstly carries out sand blasting treatment on the surface of the silicon wafer, and then puts the silicon wafer into a mixed solution containing hydrofluoric acid, nitric acid and additives for texturing;
the sand blasting process is wet sand blasting, wherein the wet sand blasting refers to that sand blasting liquid mixed by water and abrasive is pressurized by a pump and is ejected out through a nozzle to uniformly impact the surface of the silicon wafer, so that the surface of the silicon wafer is provided with an uneven texturing surface.
Furthermore, the quasi-monocrystalline silicon wafer is manufactured in a diamond wire cutting mode, and the area of a monocrystalline region on the silicon wafer accounts for 10% -99% of the area of the whole quasi-monocrystalline silicon wafer.
Furthermore, in the wet sand blasting process, the abrasive is 150-1000 meshes of silicon carbide or aluminum oxide.
Furthermore, the sand blasting liquid consists of water and abrasive, wherein the weight of the abrasive accounts for 10-40% of that of the sand blasting liquid.
Further, the pressure of the nozzle is 0.05-0.3 MPa, and the impact time of the sand blasting liquid on the surface of the silicon wafer is 1-15 min.
Further, the texturing solution is a mixed solution comprising hydrofluoric acid, nitric acid and an additive, and the additive comprises a surfactant.
Further, the silicon wafer size is (156.75-157) mm, and the weight loss of the silicon wafer after sand blasting is 1 mg-10 mg.
Furthermore, the size of the silicon wafer is (156.75-157) mm, and the etching weight of the texturing process to the mono-like silicon wafer is 0.25-0.35 g.
Compared with the prior art, the invention has the following remarkable advantages: (1) the sand blasting process used does not need to add chemical additives and acid solution, a physical destructive processing mode is carried out on the quasi-monocrystalline silicon wafer by using a high-hardness grinding material, and the surface of the silicon wafer after being impacted generates a recess due to the impact of particles to form a random concave surface and a damage layer, so that a monocrystalline region and a polycrystalline region on the quasi-monocrystalline silicon wafer can achieve uniform appearance suede, the reflectivity of the surface of the silicon wafer can be obviously reduced, and the photoelectric conversion efficiency of the solar cell is further improved; (2) in the sand blasting process, the sand blasting liquid mixed by water and abrasive is pressurized by a pump and is ejected out through a nozzle, the sand blasting treatment mode has low cost and stable process, does not use chemicals, and is also suitable for the manufacturing process of the conventional solar cell.
Drawings
FIG. 1 is a flow chart of a surface treatment method of a single-crystal-like silicon wafer according to the present invention.
FIG. 2 is a graph showing the results of the solar cell fabricated from the single-crystal-like silicon wafer of example 1 after sand blasting and texturing.
FIG. 3 is a graph showing the results of a solar cell fabricated after texturing only an acid on the mono-like silicon wafer in comparative example 2.
Detailed Description
With reference to fig. 1, the present invention provides a surface treatment method for eliminating color unevenness of single-like crystals caused by reflectivity differences among crystal grains of different sizes, which comprises the following steps:
carrying out sand blasting treatment on the surface of the silicon wafer by using a sand blasting process, and then putting the silicon wafer into a mixed solution containing hydrofluoric acid, nitric acid and an additive for texturing;
the sand blasting process is wet sand blasting, wherein the wet sand blasting refers to that sand blasting liquid mixed by water and abrasive is pressurized by a pump and is ejected out through a nozzle to uniformly impact the surface of the silicon wafer, so that the surface of the silicon wafer is provided with an uneven texturing surface.
Specifically, the quasi-monocrystalline silicon wafer is manufactured in a diamond wire cutting mode, and the area of a monocrystalline region on the silicon wafer accounts for 10% -99% of the area of the whole quasi-monocrystalline silicon wafer.
Specifically, the abrasive in the wet sand blasting process is 150-1000 meshes of silicon carbide or aluminum oxide.
Specifically, the sandblasting liquid consists of water and an abrasive, wherein the weight of the abrasive accounts for 10-40% of the weight of the sandblasting liquid.
Specifically, the nozzle pressure is 0.05-0.3 MPa, and the impact time of the sand blasting liquid on the surface of the silicon wafer is 1-15 min.
Specifically, the texturing solution is a mixed solution containing hydrofluoric acid, nitric acid and an additive, and the additive contains one or more than one surfactant.
Specifically, the silicon wafer size is (156.75-157) mm, and the weight loss of the silicon wafer after sand blasting is 1 mg-10 mg. The etching weight of the texture etching process to the mono-like silicon wafer is 0.25-0.35 g, and the etching weight to the mono-like silicon wafer with sand blasting treatment is 0.02-0.08 g higher than that of the mono-like silicon wafer without sand blasting treatment.
The method utilizes physical sand blasting bombardment on the surface of the silicon wafer after water and high-hardness powder are mixed, and then the silicon wafer is put into a mixed solution containing hydrofluoric acid, nitric acid and additives for texturing. Therefore, the sand blasting mode has low cost and simple process, does not need to use chemicals, and does not need to change the existing solar cell texturing process. The battery piece generated by the silicon piece processed by the invention can achieve qualified uniform suede effect and eliminate color unevenness of similar single crystals caused by reflectivity difference among crystal grains with different sizes.
The principles and features of this invention are described below in conjunction with examples which are set forth to illustrate, but are not to be construed to limit the scope of the invention.
Examples
The surface of a mono-crystalline silicon wafer with mono-crystalline and polycrystalline areas in appearance is pretreated by a wet sand blasting process, wherein the abrasive adopted by the wet sand blasting process is 325-mesh silicon carbide, the weight of the abrasive accounts for 0.13 of the weight of a sand blasting liquid, the pressure of a nozzle is 0.15MPa, the sand blasting time is 6min, and the weight loss of the silicon wafer after sand blasting is 4 mg. And then, performing acid texturing on the silicon wafer subjected to sand blasting, wherein the acid texturing solution comprises 480g/L of nitric acid, 95g/L of hydrofluoric acid and 0.08g/L of additive produced by Suzhou Runzi Sunviko technology, the texturing temperature is 8 ℃, and the texturing corrosion weight is 0.28 g.
Comparative example
The surface of a mono-crystalline silicon-like wafer with mono-crystalline and polycrystalline areas in appearance is pretreated only by acid texturing, wherein the acid texturing solution comprises 480g/L of nitric acid, 95g/L of hydrofluoric acid and 0.08g/L of additive produced by Suzhou Runzsun photovoltaic technology, Inc., the texturing temperature is 8 ℃, and the texturing corrosion weight is 0.22 g.
The results of the examples and comparative examples are shown in fig. 2 and 3. For example, as shown in fig. 1, it can be found that a solar cell manufactured by sand blasting and acid texturing a mono-crystalline silicon-like wafer having mono-crystalline and polycrystalline regions in appearance has no mono-crystalline or polycrystalline region in appearance, and the effect of uniform appearance color is achieved. In contrast, as shown in fig. 2, a polycrystalline region having a color different from that of a single crystal region is still visible after the acid texturing process (arrow at the lower right of the figure) compared to a solar cell fabricated from a single crystal-like silicon wafer without sand blasting.
In summary, in the sandblasting process, the sandblasting liquid mixed by water and abrasive is pressurized by a pump and is ejected through a nozzle, so that the defect that the silicon wafer is broken and broken due to ejection of water and sand by taking compressed air as a main fluid in wet sandblasting is overcome. The invention mainly uses the sand blasting process in the monocrystal-like diamond wire cutting polycrystalline silicon wafer to solve the problem that the appearance difference between the visible monocrystal and the polycrystalline region still exists after the wool making by the conventional process, and has the advantages of low cost, simple process and environmental protection compared with other processes.
Claims (8)
1. A surface treatment method of a mono-like silicon wafer is characterized in that: carrying out sand blasting treatment on the surface of the silicon wafer by using a sand blasting process, and then putting the silicon wafer into a mixed solution containing hydrofluoric acid, nitric acid and an additive for texturing;
the sand blasting process is wet sand blasting, wherein the wet sand blasting refers to that sand blasting liquid mixed by water and abrasive is pressurized by a pump and is ejected out through a nozzle to uniformly impact the surface of the silicon wafer, so that the surface of the silicon wafer is provided with an uneven texturing surface.
2. The method for surface treatment of a mono-like silicon wafer according to claim 1, wherein: the quasi-monocrystalline silicon wafer is manufactured in a diamond wire cutting mode, and the area of a monocrystalline region on the silicon wafer accounts for 10% -99% of the area of the whole quasi-monocrystalline silicon wafer.
3. The method for surface treatment of a mono-like silicon wafer according to claim 1, wherein: the abrasive in the wet sand blasting process is 150-1000 meshes of silicon carbide or aluminum oxide.
4. The method for surface treatment of a mono-like silicon wafer according to claim 1, 2 or 3, characterized in that: the sand blasting liquid consists of water and abrasive, wherein the weight of the abrasive accounts for 10-40% of that of the sand blasting liquid.
5. The method for surface treatment of a mono-like silicon wafer according to claim 4, wherein: the nozzle pressure is 0.05-0.3 MPa, and the impact time of the sand blasting liquid on the surface of the silicon wafer is 1-15 min.
6. The method for surface treatment of a mono-like silicon wafer according to claim 5, wherein: the texturing solution is a mixed solution containing hydrofluoric acid, nitric acid and an additive, and the additive contains a surfactant.
7. The method for surface treatment of a mono-like silicon wafer according to claim 5, wherein: the silicon wafer size is (156.75-157) mm, and the weight loss of the silicon wafer after sand blasting treatment is 1-10 mg.
8. The method for surface treatment of a mono-like silicon wafer according to claim 5, wherein: the size of the silicon wafer is (156.75-157) mm, and the etching weight of the texture etching process to the mono-like silicon wafer is 0.25-0.35 g.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207163A (en) * | 2022-07-25 | 2022-10-18 | 正泰新能科技有限公司 | Silicon wafer texturing method, solar cell and manufacturing method of solar cell |
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